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Shear-band cavitation determines the shape of the stress-strain curve of metallic glasses
Authors:
A. Das,
C. Ott,
D. Pechimuthu,
R. Moosavi,
M. Stoica,
P. M. Derlet,
R. Maass
Abstract:
Metallic glasses are known to have a remarkably robust yield strength, admitting Weibull moduli as high as for crystalline engineering alloys. However, their post-yielding behavior is strongly varying, with large scatter in both flow stress levels and strains at failure. Using x-ray tomography we reveal for the first time how a strain-dependent internal evolution of shear-band cavities underlies t…
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Metallic glasses are known to have a remarkably robust yield strength, admitting Weibull moduli as high as for crystalline engineering alloys. However, their post-yielding behavior is strongly varying, with large scatter in both flow stress levels and strains at failure. Using x-ray tomography we reveal for the first time how a strain-dependent internal evolution of shear-band cavities underlies this unpredictable post yielding response. We demonstrate how macroscopic strain-softening coincides with the first detection of internal shear-band cavitation. Cavity growth during plastic flow is found to follow a power-law, which yields a fractal dimension and a roughness exponent in excellent agreement with self-similar surface properties obtained after fracture. These findings demonstrate how internal micro-cracking coexists with shear-band plasticity along the plastic part of a stress-strain curve, rationalizing the large variability of plastic flow behavior seen for metallic glasses.
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Submitted 15 November, 2022;
originally announced November 2022.
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Rejuvenation engineering in metallic glasses by complementary stress and structure modulation
Authors:
D. Şopu,
F. Spieckermann,
X. L. Bian,
S. Fellner,
J. Wright,
M. Cordill,
C. Gammer,
G. Wang,
M. Stoica,
J. Eckert
Abstract:
Residual stress engineering is very widely used in the design of new advanced lightweight materials. For metallic glasses the attention has been on structural changes and rejuvenation processes. High energy scanning X-ray diffraction strain mapping reveals large elastic fluctuations in metallic glasses after deformation under triaxial compression. Microindentation hardness mapping hints to a compe…
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Residual stress engineering is very widely used in the design of new advanced lightweight materials. For metallic glasses the attention has been on structural changes and rejuvenation processes. High energy scanning X-ray diffraction strain mapping reveals large elastic fluctuations in metallic glasses after deformation under triaxial compression. Microindentation hardness mapping hints to a competing hardening-softening mechanism after compression and further reveals the complementary effects of stress and structure modulation. Transmission electron microscopy proves that structure modulation under room temperature deformation relates to the shear band formation that closely correlates to the distribution of elastic heterogeneities. Molecular dynamics simulations provide an atomistic understanding of the complex shear band activity in notched metallic glasses and the related fluctuations in the strain/stress heterogeneity. Thus, future focus should be given to stress engineering and elastic heterogeneity that together with structure modulation may allow to design metallic glasses with enhanced ductility and strain hardening ability.
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Submitted 11 October, 2022; v1 submitted 16 September, 2022;
originally announced September 2022.
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Chemical ordering in Pd$_{81}$Ge$_{19}$ metallic glass studied by reverse Monte-Carlo modelling of XRD, ND and EXAFS experimental data
Authors:
Ildikó Pethes,
Ivan Kaban,
Mihai Stoica,
Brigitte Beuneu,
Pál Jóvári
Abstract:
Pd$_{81}$Ge$_{19}$ metallic glass was investigated by neutron diffraction, X-ray diffraction and extended X-ray absorption fine structure spectroscopy (EXAFS) at the Ge K-edge. Large scale structural models were obtained by fitting the three measurements simultaneously in the framework of the reverse Monte Carlo simulation technique. It was found that the experimental data sets can be adequately f…
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Pd$_{81}$Ge$_{19}$ metallic glass was investigated by neutron diffraction, X-ray diffraction and extended X-ray absorption fine structure spectroscopy (EXAFS) at the Ge K-edge. Large scale structural models were obtained by fitting the three measurements simultaneously in the framework of the reverse Monte Carlo simulation technique. It was found that the experimental data sets can be adequately fitted without Ge-Ge nearest neighbours. Mean Pd-Pd and Pd-Ge distances are 2.80$\pm$0.02 Å and 2.50$\pm$0.02 Å, respectively. The total average coordination number of Pd is 12.1$\pm$0.5 while Ge is surrounded by 10.6$\pm$1.1 Pd atoms. The coordination numbers calculated from partial pair correlation functions were compared to those obtained by Voronoi tessellation method. It was found that the latter technique overestimates the number of nearest neighbours by about 20% due to the significant contribution of distant pairs.
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Submitted 23 September, 2016; v1 submitted 30 May, 2016;
originally announced May 2016.
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Determination of the Fermi Level Position in Dilute Magnetic Ga$_{1-x}$Mn$_{x}$N Films
Authors:
Stefan Barthel,
Gerd Kunert,
Mariuca Gartner,
Mihai Stoica,
Daniel Mourad,
Carsten Kruse,
Stephan Figge,
Detlef Hommel,
Gerd Czycholl
Abstract:
We report on a combined theoretical and experimental determination of the Fermi level position in wurtzite Ga$_{1-x}$Mn$_{x}$N films with $x=4\%$ and $x=10\%$ as grown by molecular beam epitaxy. By means of ellipsometric measurements the real part of the frequency-dependent conductivity is determined. An electronic model in the framework of the effective bond-orbital model is parameterized in orde…
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We report on a combined theoretical and experimental determination of the Fermi level position in wurtzite Ga$_{1-x}$Mn$_{x}$N films with $x=4\%$ and $x=10\%$ as grown by molecular beam epitaxy. By means of ellipsometric measurements the real part of the frequency-dependent conductivity is determined. An electronic model in the framework of the effective bond-orbital model is parameterized in order to theoretically reproduce the measured transport properties. Predictions for the long-wavelength behaviour as a function of the Fermi level are made. The corresponding density of states obtained in this model is in qualitative agreement with first-principle calculations. The absence of a significant experimental peak in the AC conductivity for small frequencies indicates that the Fermi level lies in a gap between two Mn-related impurity bands in the host band gap.
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Submitted 12 March, 2014; v1 submitted 27 January, 2014;
originally announced January 2014.
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p-Type Zinc Oxide Spinels: Application to Transparent Conductors and Spintronics
Authors:
Maria Stoica,
Cynthia S. Lo
Abstract:
We report on the electronic and optical properties of two theoretically predicted stable spinel compounds of the form ZnB2O4, where B = Ni or Cu; neither compound has been previously synthesized, so we compare them to the previously studied p-type ZnCo2O4 spinel. These new materials exhibit spin polarization that is ideal for spintronics applications, and broad conductivity maxima near the valence…
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We report on the electronic and optical properties of two theoretically predicted stable spinel compounds of the form ZnB2O4, where B = Ni or Cu; neither compound has been previously synthesized, so we compare them to the previously studied p-type ZnCo2O4 spinel. These new materials exhibit spin polarization that is ideal for spintronics applications, and broad conductivity maxima near the valence band edge that facilitate p-type dopability. We show that 3d electrons on the octahedrally coordinated Zn atom fall deep within the valence band and do not contribute significantly to the electronic structure of the material, while the O 2p and tetrahedrally coordinated B 3d electrons hybridize broadly in the shallow valence states, resulting in increasing curvature (i.e., decreased electron effective mass) of valence bands near the band edge. In particular, ZnCu2O4 exhibits high electrical conductivities near the valence band edge that, at sigma = 2 x 10^4 S/cm, are twice the maximum found for ZnCo2O4, a previously synthesized compound in this class of materials. This material also exhibits ferromagnetism in all of its most stable structures, which makes it a good candidate for further study as a dilute magnetic semiconductor.
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Submitted 5 December, 2013;
originally announced December 2013.
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Electrical transport properties of Co-based skutterudites filled with Ag and Au
Authors:
Maria Stoica,
Cynthia S. Lo
Abstract:
This work presents theoretical calculations of the electrical transport properties of the Ag, Au, and La fractionally filled bulk skutterudites: CoSb3, CoAs3, and CoP3. Density functional theory (DFT), along with projector augmented wave (PAW) potentials, was used to calculate bulk band structures and partial density of states. The Seebeck coefficient (S), electrical conductivity (s), and power fa…
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This work presents theoretical calculations of the electrical transport properties of the Ag, Au, and La fractionally filled bulk skutterudites: CoSb3, CoAs3, and CoP3. Density functional theory (DFT), along with projector augmented wave (PAW) potentials, was used to calculate bulk band structures and partial density of states. The Seebeck coefficient (S), electrical conductivity (s), and power factor (S2 s) were calculated as a function of temperature and filling fraction using the momentum matrix method along the entire first Brillouin zone. Calculated trends in the electrical transport properties agree with previously published experimental measurements for p-type unfilled and La filled CoSb3. The calculated S and s values for the Ag and Au filled compounds indicates that the most promising electronic properties are exhibited by p-type Au0.125(CoSb3)4, Au0.25(CoSb3)4, and Au(CoSb3)4. Au is therefore recommended as a promising filler for improved thermoelectric properties in cobalt antimonides. Ag is also a good filler for cobalt phosphides; the creation of a negative indirect band gap is observed in Ag(CoP3)4, which indicates semimetallic behavior, so this compound may possibly exhibit lower thermal conductivity than metallic CoP3. Finally, we recommend future directions for improving the thermoelectric figure of merit of these materials.
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Submitted 14 September, 2012;
originally announced September 2012.
