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Electronic decoupling and hole-doping of graphene nanoribbons on metal substrates by chloride intercalation
Authors:
Amogh Kinikar,
Thorsten G. Englmann,
Marco Di Giovannantonio,
Nicolò Bassi,
Feifei Xiang,
Samuel Stolz,
Roland Widmer,
Gabriela Borin Barin,
Elia Turco,
Néstor Merino Díez,
Kristjan Eimre,
Andres Ortega Guerrero,
Xinliang Feng,
Oliver Gröning,
Carlo A. Pignedoli,
Roman Fasel,
Pascal Ruffieux
Abstract:
Atomically precise graphene nanoribbons (GNRs) have a wide range of electronic properties that depend sensitively on their chemical structure. Several types of GNRs have been synthesized on metal surfaces through selective surface-catalyzed reactions. The resulting GNRs are adsorbed on the metal surface, which may lead to hybridization between the GNR orbitals and those of the substrate. This make…
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Atomically precise graphene nanoribbons (GNRs) have a wide range of electronic properties that depend sensitively on their chemical structure. Several types of GNRs have been synthesized on metal surfaces through selective surface-catalyzed reactions. The resulting GNRs are adsorbed on the metal surface, which may lead to hybridization between the GNR orbitals and those of the substrate. This makes investigation of the intrinsic electronic properties of GNRs more difficult, and also rules out capacitive gating. Here we demonstrate the formation of a dielectric gold chloride adlayer that can intercalate underneath GNRs on the Au(111) surface. The intercalated gold chloride adlayer electronically decouples the GNRs from the metal and leads to a substantial hole doping of the GNRs. Our results introduce an easily accessible tool in the in situ characterization of GNRs grown on Au(111) that allows for exploration of their electronic properties in a heavily hole-doped regime.
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Submitted 30 April, 2024;
originally announced April 2024.
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Controllable orbital angular momentum monopoles in chiral topological semimetals
Authors:
Yun Yen,
Jonas A. Krieger,
Mengyu Yao,
Iñigo Robredo,
Kaustuv Manna,
Qun Yang,
Emily C. McFarlane,
Chandra Shekhar,
Horst Borrmann,
Samuel Stolz,
Roland Widmer,
Oliver Gröning,
Vladimir N. Strocov,
Stuart S. P. Parkin,
Claudia Felser,
Maia G. Vergniory,
Michael Schüler,
Niels B. M. Schröter
Abstract:
The emerging field of orbitronics aims at generating and controlling currents of electronic orbital angular momentum (OAM) for information processing. Structurally chiral topological crystals could be particularly suitable orbitronic materials because they have been predicted to host topological band degeneracies in reciprocal space that are monopoles of OAM. Around such a monopole, the OAM is loc…
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The emerging field of orbitronics aims at generating and controlling currents of electronic orbital angular momentum (OAM) for information processing. Structurally chiral topological crystals could be particularly suitable orbitronic materials because they have been predicted to host topological band degeneracies in reciprocal space that are monopoles of OAM. Around such a monopole, the OAM is locked isotopically parallel or antiparallel to the direction of the electron's momentum, which could be used to generate large and controllable OAM currents. However, OAM monopoles have not yet been directly observed in chiral crystals, and no handle to control their polarity has been discovered. Here, we use circular dichroism in angle-resolved photoelectron spectroscopy (CD-ARPES) to image OAM monopoles in the chiral topological semimetals PtGa and PdGa. Moreover, we also demonstrate that the polarity of the monopole can be controlled via the structural handedness of the host crystal by imaging OAM monopoles and anti-monopoles in the two enantiomers of PdGa, respectively. For most photon energies used in our study, we observe a sign change in the CD-ARPES spectrum when comparing positive and negative momenta along the light direction near the topological degeneracy. This is consistent with the conventional view that CD-ARPES measures the projection of the OAM monopole along the photon momentum. For some photon energies, however, this sign change disappears, which can be understood from our numerical simulations as the interference of polar atomic OAM contributions, consistent with the presence of OAM monopoles. Our results highlight the potential of chiral crystals for orbitronic device applications, and our methodology could enable the discovery of even more complicated nodal OAM textures that could be exploited for orbitronics.
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Submitted 22 November, 2023;
originally announced November 2023.
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Parallel spin-momentum locking in a chiral topological semimetal
Authors:
Jonas A. Krieger,
Samuel Stolz,
Inigo Robredo,
Kaustuv Manna,
Emily C. McFarlane,
Mihir Date,
Eduardo B. Guedes,
J. Hugo Dil,
Chandra Shekhar,
Horst Borrmann,
Qun Yang,
Mao Lin,
Vladimir N. Strocov,
Marco Caputo,
Banabir Pal,
Matthew D. Watson,
Timur K. Kim,
Cephise Cacho,
Federico Mazzola,
Jun Fujii,
Ivana Vobornik,
Stuart S. P. Parkin,
Barry Bradlyn,
Claudia Felser,
Maia G. Vergniory
, et al. (1 additional authors not shown)
Abstract:
Spin-momentum locking in solids describes a directional relationship between the electron's spin angular momentum and its linear momentum over the entire Fermi surface. While orthogonal spin-momentum locking, such as Rashba spin-orbit coupling, has been studied for decades and inspired a vast number of applications, its natural counterpart, the purely parallel spin-momentum locking, has remained e…
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Spin-momentum locking in solids describes a directional relationship between the electron's spin angular momentum and its linear momentum over the entire Fermi surface. While orthogonal spin-momentum locking, such as Rashba spin-orbit coupling, has been studied for decades and inspired a vast number of applications, its natural counterpart, the purely parallel spin-momentum locking, has remained elusive in experiments. Recently, chiral topological semimetals that host single- and multifold band crossings have been predicted to realize such parallel locking. Here, we use spin- and angle-resolved photoelectron spectroscopy to probe spin-momentum locking of a multifold fermion in the chiral topological semimetal PtGa via the spin-texture of its topological Fermi-arc surface states. We find that the electron spin of the Fermi-arcs points orthogonal to their Fermi surface contour for momenta close to the projection of the bulk multifold fermion, which is consistent with parallel spin-momentum locking of the latter. We anticipate that our discovery of parallel spin-momentum locking of multifold fermions will lead to the integration of chiral topological semimetals in novel spintronic devices, and the search for spin-dependent superconducting and magnetic instabilities in these materials.
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Submitted 15 October, 2022;
originally announced October 2022.
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Growth optimization and device integration of narrow-bandgap graphene nanoribbons
Authors:
Gabriela Borin Barin,
Qiang Sun,
Marco Di Giovannantonio,
Cheng-Zhuo Du,
Xiao-Ye Wang,
Juan Pablo Llinas,
Zafer Mutlu,
Yuxuan Lin,
Jan Wilhelm,
Jan Overbeck,
Colin Daniels,
Michael Lamparski,
Hafeesudeen Sahabudeen,
Mickael L. Perrin,
José I. Urgel,
Shantanu Mishra,
Amogh Kinikar,
Roland Widmer,
Samuel Stolz,
Max Bommert,
Carlo Pignedoli,
Xinliang Feng,
Michel Calame,
Klaus Müllen,
Akimitsu Narita
, et al. (4 additional authors not shown)
Abstract:
The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for succe…
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The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, we study the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs), which are expected to have an optimal band gap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultra-high vacuum conditions from Br- and I-substituted precursors. We show that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed us to integrate 5-AGNRs into devices and to realize the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. Our study highlights that optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.
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Submitted 2 February, 2022;
originally announced February 2022.
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Controllable p-type Doping of 2D WSe2 via Vanadium Substitution
Authors:
Azimkhan Kozhakhmetov,
Samuel Stolz,
Anne Marie Z. Tan,
Rahul Pendurthi,
Saiphaneendra Bachu,
Furkan Turker,
Nasim Alem,
Jessica Kachian,
Saptarshi Das,
Richard G. Hennig,
Oliver Gröning,
Bruno Schuler,
Joshua A. Robinson
Abstract:
Scalable substitutional doping of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here, we report scalable growth and vanadium (V) doping of 2D WSe2 at front-end-of-line (FEOL) and back-end-of-line (BEOL) compatible temperatures of 800 °C and 400…
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Scalable substitutional doping of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here, we report scalable growth and vanadium (V) doping of 2D WSe2 at front-end-of-line (FEOL) and back-end-of-line (BEOL) compatible temperatures of 800 °C and 400 °C, respectively. A combination of experimental and theoretical studies confirm that vanadium atoms substitutionally replace tungsten in WSe2, which results in p-type doping via the introduction of discrete defect levels that lie close to the valence band maxima. The p-type nature of the V dopants is further verified by constructed field-effect transistors, where hole conduction becomes dominant with increasing vanadium concentration. Hence, our study presents a method to precisely control the density of intentionally introduced impurities, which is indispensable in the production of electronic-grade wafer-scale extrinsic 2D semiconductors.
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Submitted 28 July, 2021;
originally announced July 2021.
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Weyl-fermions, Fermi-arcs, and minority-spin carriers in ferromagnetic CoS2
Authors:
Niels B. M. Schröter,
Iñigo Robredo,
Sebastian Klemenz,
Robert J. Kirby,
Jonas A. Krieger,
Ding Pei,
Tianlun Yu,
Samuel Stolz,
Thorsten Schmitt,
Pavel Dudin,
Timur K. Kim,
Cephise Cacho,
Andreas Schnyder,
Aitor Bergara,
Vladimir N. Strocov,
Fernando de Juan,
Maia G. Vergniory,
Leslie M. Schoop
Abstract:
The pyrite compound CoS2 has been intensively studied in the past due to its itinerant ferromagnetism and potential for half-metallicity, which make it a promising material for spintronic applications. However, its electronic structure remains only poorly understood. Here we use complementary bulk- and surface-sensitive angle-resolved photoelectron spectroscopy and ab-initio calculations to provid…
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The pyrite compound CoS2 has been intensively studied in the past due to its itinerant ferromagnetism and potential for half-metallicity, which make it a promising material for spintronic applications. However, its electronic structure remains only poorly understood. Here we use complementary bulk- and surface-sensitive angle-resolved photoelectron spectroscopy and ab-initio calculations to provide a complete picture of its band structure. We discover Weyl-cones at the Fermi-level, which presents CoS2 in a new light as a rare member of the recently discovered class of magnetic topological metals. We directly observe the topological Fermi-arc surface states that link the Weyl-nodes, which will influence the performance of CoS2 as a spin-injector by modifying its spin-polarization at interfaces. Additionally, we are for the first time able to directly observe a minority-spin bulk electron pocket in the corner of the Brillouin zone, which proves that CoS2 cannot be a true half-metal. Beyond settling the longstanding debate about half-metallicity in CoS2, our results provide a prime example of how the topology of magnetic materials can affect their use in spintronic applications.
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Submitted 2 June, 2020;
originally announced June 2020.
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Direct observation of handedness-dependent quasiparticle interference in the two enantiomers of topological chiral semimetal PdGa
Authors:
Paolo Sessi,
Feng-Ren Fan,
Felix Küster,
Kaustuv Manna,
Niels B. M. Schröter,
Jing-Rong Ji,
Samuel Stolz,
Jonas A. Krieger,
Ding Pei,
Timur K. Kim,
Pavel Dudin,
Cephise Cacho,
Roland Widmer,
Horst Borrmann,
Wujun Shi,
Kai Chang,
Yan Sun,
Claudia Felser,
Stuart S. P. Parkin
Abstract:
It has recently been proposed that combining chirality with topological band theory may result in a totally new class of fermions. These particles have distinct properties: they appear at high symmetry points of the reciprocal lattice, they are connected by helicoidal surface Fermi arcs spanning the entire Brillouin zone, and they are expected to exist over a large energy range. Additionally, they…
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It has recently been proposed that combining chirality with topological band theory may result in a totally new class of fermions. These particles have distinct properties: they appear at high symmetry points of the reciprocal lattice, they are connected by helicoidal surface Fermi arcs spanning the entire Brillouin zone, and they are expected to exist over a large energy range. Additionally, they are expected to give rise to totally new effects forbidden in other topological classes. Understanding how these unconventional quasiparticles propagate and interact is crucial for exploiting their potential in innovative chirality-driven device architectures. These aspects necessarily rely on the detection of handedness-dependent effects in the two enantiomers and remain largely unexplored so far. Here, we use scanning tunnelling microscopy to visualize the electronic properties of both enantiomers of the prototypical chiral topological semimetal PdGa at the atomic scale. We reveal that the surface-bulk connectivity goes beyond ensuring the existence of topological Fermi arcs, but also determines how quasiparticles propagate and scatter at impurities, giving rise to chiral quantum interference patterns of opposite handedness and opposite spiralling direction for the two different enantiomers, a direct manifestation of the change of sign of their Chern number. Additionally, we demonstrate that PdGa remains topologically non-trivial over a large energy range, experimentally detecting Fermi arcs in an energy window of more than 1.6 eV symmetrically centerd around the Fermi level. These results are rationalized in terms of the deep connection between chirality in real and reciprocal space in this class of materials, and they allow to identify PdGa as an ideal topological chiral semimetal.
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Submitted 6 May, 2020;
originally announced May 2020.
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Observation and control of maximal Chern numbers in a chiral topological semimetal
Authors:
Niels B. M. Schröter,
Samuel Stolz,
Kaustuv Manna,
Fernando de Juan,
Maia G. Vergniory,
Jonas A. Krieger,
Ding Pei,
Pavel Dudin,
Timur K. Kim,
Cephise Cacho,
Barry Bradlyn,
Horst Borrmann,
Marcus Schmidt,
Roland Widmer,
Vladimir Strokov,
Claudia Felser
Abstract:
Topological semimetals feature protected nodal band degeneracies characterized by a topological invariant known as the Chern number (C). Nodal band crossings with linear dispersion are expected to have at most |C|=4, which sets an upper limit to the magnitude of many topological phenomena in these materials. Here we show that the chiral crystal PdGa displays multifold band crossings, which are con…
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Topological semimetals feature protected nodal band degeneracies characterized by a topological invariant known as the Chern number (C). Nodal band crossings with linear dispersion are expected to have at most |C|=4, which sets an upper limit to the magnitude of many topological phenomena in these materials. Here we show that the chiral crystal PdGa displays multifold band crossings, which are connected by exactly four surface Fermi-arcs, thus proving that they carry the maximal Chern number magnitude of 4. By comparing two enantiomers, we observe a reversal of their Fermi-arc velocities, which demonstrates that the handedness of chiral crystals can be used to control the sign of their Chern numbers.
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Submitted 9 July, 2020; v1 submitted 19 July, 2019;
originally announced July 2019.
