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Identification of graphite with perfect rhombohedral stacking by electronic Raman scattering
Authors:
András Pálinkás,
Krisztián Márity,
Konrád Kandrai,
Zoltán Tajkov,
Martin Gmitra,
Péter Vancsó,
Levente Tapasztó,
Péter Nemes-Incze
Abstract:
Rhombohedral graphite (RG) shows strong correlations in its topological flat band and is pivotal for exploring emergent, correlated electronic phenomena. One key advantage is the enhancement of electronic interactions with the increase in the number of rhombohedrally stacked graphene layers. Increasing thickness also leads to an exponential increase in the number of stacking faults, necessitating…
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Rhombohedral graphite (RG) shows strong correlations in its topological flat band and is pivotal for exploring emergent, correlated electronic phenomena. One key advantage is the enhancement of electronic interactions with the increase in the number of rhombohedrally stacked graphene layers. Increasing thickness also leads to an exponential increase in the number of stacking faults, necessitating a precise method to identify flawless rhombohedral stacking. Overcoming this challenge is difficult because the established technique for stacking sequence identification, based on the Raman 2D peak, fails in thick RG samples. We demonstrate that the strong layer dependence of the band structure can be harnessed to identify RG without stacking faults, or alternatively, to detect their presence. For thicknesses ranging from 3 to 12 layers, we show that each perfect RG structure presents distinctive peak positions in electronic Raman scattering (ERS). This measurement can be carried out using a conventional confocal Raman spectrometer at room temperature, using visible excitation wavelengths. Consequently, this overcomes the identification challenge by providing a simple and fast optical measurement technique, thereby helping to establish RG as a platform for studying strong correlations in one of the simplest crystals possible.
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Submitted 5 April, 2024; v1 submitted 31 January, 2024;
originally announced January 2024.
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Signature of pressure-induced topological phase transition in ZrTe$_5$
Authors:
Zoltán Kovács-Krausz,
Dániel Nagy,
Albin Márffy,
Bogdan Karpiak,
Zoltán Tajkov,
László Oroszlány,
János Koltai,
Péter Nemes-Incze,
Saroj P. Dash,
Péter Makk,
Szabolcs Csonka,
Endre Tóvári
Abstract:
The layered van der Waals material ZrTe$_5$ is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe$_5$ nanodevices at hydrostatic pressures up to 2 GPa. The t…
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The layered van der Waals material ZrTe$_5$ is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe$_5$ nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and subsequent re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe$_5$ is in a weak TI phase in ambient conditions.
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Submitted 15 December, 2023;
originally announced December 2023.
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Mechanical strain induced topological phase changes of few layer ZrTe$_5$
Authors:
Zoltán Tajkov,
Konrád Kandrai,
Dániel Nagy,
Levente Tapasztó,
János Koltai,
Péter Nemes-Incze
Abstract:
Understanding the topological aspects of the band structure of solids has fundamentally changed our appreciation of their properties. The layered, van der Waals transition-metal pentatelluride ZrTe$_5$ has proven on numerous occasions to be an excellent candidate for the study of controllable topological phase transitions. Here, we investigate the topological phase diagrams of monolayer and bilaye…
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Understanding the topological aspects of the band structure of solids has fundamentally changed our appreciation of their properties. The layered, van der Waals transition-metal pentatelluride ZrTe$_5$ has proven on numerous occasions to be an excellent candidate for the study of controllable topological phase transitions. Here, we investigate the topological phase diagrams of monolayer and bilayer forms of ZrTe$_5$, under mechanical deformations using \textit{ab initio} techniques. We find that mechanical deformation can close the monolayer's topological gap, while the bilayer exhibits richer phase diagram, including both topological insulating, trivial metallic and insulating phases. The bilayer is predicted to be on the topological phase boundary. We also address the preparation of monolayers, using \emph{ab initio} simulations and experimental scanning tunneling microscopy measurements. We confirm that while monolayer ZrTe$_5$ is difficult to exfoliate without compromising its crystalline structure, bilayers offer a more stable alternative, revealing the complexities and limitations of using gold substrates for monolayer exfoliation.
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Submitted 8 November, 2023;
originally announced November 2023.
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Revealing the band structure of ZrTe$_5$ using Multicarrier Transport
Authors:
Zoltán Kovács-Krausz,
Endre Tóvári,
Dániel Nagy,
Albin Márffy,
Bogdan Karpiak,
Zoltán Tajkov,
László Oroszlány,
János Koltai,
Péter Nemes-Incze,
Saroj Dash,
Péter Makk,
Szabolcs Csonka
Abstract:
The layered material ZrTe$_5$ appears to exhibit several exotic behaviors which resulted in significant interest recently, although the exact properties are still highly debated. Among these we find a Dirac/Weyl semimetallic behavior, nontrivial spin textures revealed by low temperature transport, and a potential weak or strong topological phase. The anomalous behavior of resistivity has been rece…
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The layered material ZrTe$_5$ appears to exhibit several exotic behaviors which resulted in significant interest recently, although the exact properties are still highly debated. Among these we find a Dirac/Weyl semimetallic behavior, nontrivial spin textures revealed by low temperature transport, and a potential weak or strong topological phase. The anomalous behavior of resistivity has been recently elucidated as originating from band shifting in the electronic structure. Our work examines magnetotransport behavior in ZrTe$_5$ samples in the context of multicarrier transport. The results, in conjunction with ab-initio band structure calculations, indicate that many of the transport features of ZrTe$_5$ across the majority of the temperature range can be adequately explained by the semiclassical multicarrier transport model originating from a complex Fermi surface.
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Submitted 19 January, 2023; v1 submitted 14 September, 2022;
originally announced September 2022.
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Revealing the topological phase diagram of ZrTe$_5$ using the complex strain fields of microbubbles
Authors:
Zoltán Tajkov,
Dániel Nagy,
Konrád Kandrai,
János Koltai,
László Oroszlány,
Péter Süle,
Zsolt E. Horváth,
Péter Vancsó,
Levente Tapasztó,
Péter Nemes-Incze
Abstract:
Topological materials host robust properties, unaffected by microscopic perturbations, owing to the global topological properties of the bulk electron system. Materials in which the topological invariant can be changed by easily tuning external parameters are especially sought after. Zirconium pentatelluride (ZrTe$_5$) is one of a few experimentally available materials that reside close to the bou…
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Topological materials host robust properties, unaffected by microscopic perturbations, owing to the global topological properties of the bulk electron system. Materials in which the topological invariant can be changed by easily tuning external parameters are especially sought after. Zirconium pentatelluride (ZrTe$_5$) is one of a few experimentally available materials that reside close to the boundary of a topological phase transition, allowing the switching of its invariant by mechanical strain. Here, we unambiguously identify a topological insulator - metal transition as a function of strain, by a combination of ab initio calculations and direct measurements of the local charge density. Our model quantitatively describes the response to complex strain patterns found in bubbles of few layer ZrTe$_5$ without fitting parameters, reproducing the mechanical deformation dependent closing of the band gap observed using scanning tunneling microscopy. We calculate the topological phase diagram of ZrTe$_5$ and identify the phase at equilibrium, enabling the design of device architectures which exploit the unique topological switching characteristics of the system.
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Submitted 15 March, 2022;
originally announced March 2022.
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Observation of competing, correlated ground states in the flat band of rhombohedral graphite
Authors:
Imre Hagymási,
Mohammad Syahid Mohd Isa,
Zoltán Tajkov,
Krisztián Márity,
Oroszlány László,
János Koltai,
Assem Alassaf,
Péter Kun,
Konrád Kandrai,
András Pálinkás,
Péter Vancsó,
Levente Tapasztó,
Péter Nemes-Incze
Abstract:
In crystalline solids the interactions of charge and spin can result in a variety of emergent quantum ground states, especially in partially filled, topological flat bands such as Landau levels or in 'magic-angle' bilayer graphene. Much less explored is rhombohedral graphite (RG), perhaps the simplest and structurally most perfect condensed matter system to host a flat band protected by symmetry.…
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In crystalline solids the interactions of charge and spin can result in a variety of emergent quantum ground states, especially in partially filled, topological flat bands such as Landau levels or in 'magic-angle' bilayer graphene. Much less explored is rhombohedral graphite (RG), perhaps the simplest and structurally most perfect condensed matter system to host a flat band protected by symmetry. By scanning tunneling microscopy we map the flat band charge density of 8, 10 and 17 layers and identify a domain structure emerging from a competition between a sublattice antiferromagnetic insulator and a gapless correlated paramagnet. Our density-matrix renormalization group calculations explain the observed features and demonstrate that the correlations are fundamentally different from graphene based magnetism identified until now, forming the ground state of a quantum magnet. Our work establishes RG as a new platform to study many-body interactions beyond the mean-field approach, where quantum fluctuations and entanglement dominate.
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Submitted 15 July, 2022; v1 submitted 26 January, 2022;
originally announced January 2022.
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Competition of trivial and topological phases in patterned graphene based heterostructures
Authors:
Zoltán Tajkov,
János Koltai,
József Cserti,
László Oroszlány
Abstract:
We explore the effect of mechanical strain on the electronic spectrum of patterned graphene based heterostructures. We focus on the competition of Kekulé-O type distortion favoring a trivial phase and commensurate Kane-Mele type spin-orbit coupling generating a topological phase. We derive a simple low-energy Dirac Hamiltonian incorporating the two gap promoting mechanisms and include terms corres…
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We explore the effect of mechanical strain on the electronic spectrum of patterned graphene based heterostructures. We focus on the competition of Kekulé-O type distortion favoring a trivial phase and commensurate Kane-Mele type spin-orbit coupling generating a topological phase. We derive a simple low-energy Dirac Hamiltonian incorporating the two gap promoting mechanisms and include terms corresponding to uniaxial strain. The derived effective model explains previous ab initio results through a simple physical picture. We show that while the trivial gap is sensitive to mechanical distortions, the topological gap stays resilient.
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Submitted 6 May, 2020; v1 submitted 12 December, 2019;
originally announced December 2019.
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Topological Phase Diagram of BiTeX--Graphene Hybrid Structures
Authors:
Zoltán Tajkov,
Dávid Visontai,
László Oroszlány,
János Koltai
Abstract:
Combining graphene with other novel layered materials is a possible way for engineering the band structure of charge carriers. Strong spin-orbit coupling in BiTeX compounds and the recent fabrication of a single layer of BiTeI points towards a feasible experimental realization of a Kane--Mele phase in graphene-based heterostructures. Here, we theoretically demonstrate the tunability of the topolog…
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Combining graphene with other novel layered materials is a possible way for engineering the band structure of charge carriers. Strong spin-orbit coupling in BiTeX compounds and the recent fabrication of a single layer of BiTeI points towards a feasible experimental realization of a Kane--Mele phase in graphene-based heterostructures. Here, we theoretically demonstrate the tunability of the topological phase of hybrid systems built from graphene and BiTeX (X = I, Br, Cl) layers by uniaxial in-plane tensile and out-of plane compressive strain. We show that structural stress inherently present in fabricated samples could induce a topological phase transition, thus turning the sample in a novel experimental realization of a time reversal invariant topological insulator.
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Submitted 15 October, 2019;
originally announced October 2019.
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Uniaxial Strain Induced Topological Phase Transition in Bismuth-Tellurohalide-Graphene Heterostructures
Authors:
Zoltán Tajkov,
Dávid Visontai,
László Oroszlány,
János Koltai
Abstract:
We explore the electronic structure and topological phase diagram of heterostructures formed of graphene and ternary bismuth tellurohalide layers. We show that mechanical strain inherently present in fabricated samples could induce a topological phase transition in single-sided heterostructures, turning the sample into a novel experimental realisation of a time reversal invariant topological insul…
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We explore the electronic structure and topological phase diagram of heterostructures formed of graphene and ternary bismuth tellurohalide layers. We show that mechanical strain inherently present in fabricated samples could induce a topological phase transition in single-sided heterostructures, turning the sample into a novel experimental realisation of a time reversal invariant topological insulator. We construct an effective tight binding description for low energy excitations and fit the model's parameters to ab initio band structures. We propose a simple approach for predicting phase boundaries as a function of mechanical distortions and hence gain a deeper understanding on how the topological phase in the considered system may be engineered.
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Submitted 19 June, 2019; v1 submitted 1 March, 2019;
originally announced March 2019.
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Magic number theory of superconducting proximity effects and Wigner delay times in graphene-like molecules
Authors:
Péter Rakyta,
Asma Alanazy,
Andor Kormányos,
Zoltán Tajkov,
Gergely Kukucska,
János Koltai,
Sara Sangtarash,
Hatef Sadeghi,
József Cserti,
Colin J. Lambert
Abstract:
When a single molecule is connected to external electrodes by linker groups, the connectivity of the linkers to the molecular core can be controlled to atomic precision by appropriate chemical synthesis. Recently, the connectivity dependence of the electrical conductance and Seebeck coefficient of single molecules has been investigated both theoretically and experimentally. Here we study the conne…
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When a single molecule is connected to external electrodes by linker groups, the connectivity of the linkers to the molecular core can be controlled to atomic precision by appropriate chemical synthesis. Recently, the connectivity dependence of the electrical conductance and Seebeck coefficient of single molecules has been investigated both theoretically and experimentally. Here we study the connectivity dependence of the Wigner delay time of single-molecule junctions and the connectivity dependence of superconducting proximity effects, which occur when the external electrodes are replaced by superconductors. Although absolute values of transport properties depend on complex and often uncontrolled details of the coupling between the molecule and electrodes, we demonstrate that ratios of transport properties can be predicted using tables of 'magic numbers,' which capture the connectivity dependence of superconducting proximity effects and Wigner delay times within molecules. These numbers are calculated easily, without the need for large-scale computations. For normal-molecule-superconducting junctions, we find that the electrical conductance is proportional to the fourth power of their magic numbers, whereas for superconducting-molecule-superconducting junctions, the critical current is proportional to the square of their magic numbers. For more conventional normal-molecule-normal junctions, we demonstrate that delay time ratios can be obtained from products of magic number tables.
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Submitted 28 March, 2019; v1 submitted 23 November, 2018;
originally announced November 2018.
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Exfoliation of single layer BiTeI flakes
Authors:
Bálint Fülöp,
Zoltán Tajkov,
János Pető,
Péter Kun,
János Koltai,
László Oroszlány,
Endre Tóvári,
Hiroshi Murakawa,
Yoshinori Tokura,
Sándor Bordács,
Levente Tapasztó,
Szabolcs Csonka
Abstract:
Spin orbit interaction can be strongly boosted when a heavy element is embedded into an inversion asymmetric crystal field. A simple structure to realize this concept in a 2D crystal contains three atomic layers, a middle one built up from heavy elements generating strong atomic spin-orbit interaction and two neighboring atomic layers with different electron negativity. BiTeI is a promising candid…
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Spin orbit interaction can be strongly boosted when a heavy element is embedded into an inversion asymmetric crystal field. A simple structure to realize this concept in a 2D crystal contains three atomic layers, a middle one built up from heavy elements generating strong atomic spin-orbit interaction and two neighboring atomic layers with different electron negativity. BiTeI is a promising candidate for such a 2D crystal, since it contains heavy Bi layer between Te and I layers. Recently the bulk form of BiTeI attracted considerable attention due to its giant Rashba interaction, however, 2D form of this crystal was not yet created. In this work we report the first exfoliation of single layer BiTeI using a recently developed exfoliation technique on stripped gold. Our combined scanning probe studies and first principles calculations show that SL BiTeI flakes with sizes of 100 $μ$m were achieved which are stable at ambient conditions. The giant Rashba splitting and spin-momentum locking of this new member of 2D crystals open the way towards novel spintronic applications and synthetic topological heterostructures.
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Submitted 27 September, 2017;
originally announced September 2017.
