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Identification of graphite with perfect rhombohedral stacking by electronic Raman scattering
Authors:
András Pálinkás,
Krisztián Márity,
Konrád Kandrai,
Zoltán Tajkov,
Martin Gmitra,
Péter Vancsó,
Levente Tapasztó,
Péter Nemes-Incze
Abstract:
Rhombohedral graphite (RG) shows strong correlations in its topological flat band and is pivotal for exploring emergent, correlated electronic phenomena. One key advantage is the enhancement of electronic interactions with the increase in the number of rhombohedrally stacked graphene layers. Increasing thickness also leads to an exponential increase in the number of stacking faults, necessitating…
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Rhombohedral graphite (RG) shows strong correlations in its topological flat band and is pivotal for exploring emergent, correlated electronic phenomena. One key advantage is the enhancement of electronic interactions with the increase in the number of rhombohedrally stacked graphene layers. Increasing thickness also leads to an exponential increase in the number of stacking faults, necessitating a precise method to identify flawless rhombohedral stacking. Overcoming this challenge is difficult because the established technique for stacking sequence identification, based on the Raman 2D peak, fails in thick RG samples. We demonstrate that the strong layer dependence of the band structure can be harnessed to identify RG without stacking faults, or alternatively, to detect their presence. For thicknesses ranging from 3 to 12 layers, we show that each perfect RG structure presents distinctive peak positions in electronic Raman scattering (ERS). This measurement can be carried out using a conventional confocal Raman spectrometer at room temperature, using visible excitation wavelengths. Consequently, this overcomes the identification challenge by providing a simple and fast optical measurement technique, thereby helping to establish RG as a platform for studying strong correlations in one of the simplest crystals possible.
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Submitted 5 April, 2024; v1 submitted 31 January, 2024;
originally announced January 2024.
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Mechanical strain induced topological phase changes of few layer ZrTe$_5$
Authors:
Zoltán Tajkov,
Konrád Kandrai,
Dániel Nagy,
Levente Tapasztó,
János Koltai,
Péter Nemes-Incze
Abstract:
Understanding the topological aspects of the band structure of solids has fundamentally changed our appreciation of their properties. The layered, van der Waals transition-metal pentatelluride ZrTe$_5$ has proven on numerous occasions to be an excellent candidate for the study of controllable topological phase transitions. Here, we investigate the topological phase diagrams of monolayer and bilaye…
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Understanding the topological aspects of the band structure of solids has fundamentally changed our appreciation of their properties. The layered, van der Waals transition-metal pentatelluride ZrTe$_5$ has proven on numerous occasions to be an excellent candidate for the study of controllable topological phase transitions. Here, we investigate the topological phase diagrams of monolayer and bilayer forms of ZrTe$_5$, under mechanical deformations using \textit{ab initio} techniques. We find that mechanical deformation can close the monolayer's topological gap, while the bilayer exhibits richer phase diagram, including both topological insulating, trivial metallic and insulating phases. The bilayer is predicted to be on the topological phase boundary. We also address the preparation of monolayers, using \emph{ab initio} simulations and experimental scanning tunneling microscopy measurements. We confirm that while monolayer ZrTe$_5$ is difficult to exfoliate without compromising its crystalline structure, bilayers offer a more stable alternative, revealing the complexities and limitations of using gold substrates for monolayer exfoliation.
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Submitted 8 November, 2023;
originally announced November 2023.
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The composition and structure of the ubiquitous hydrocarbon contamination on van der Waals materials
Authors:
András Pálinkás,
György Kálvin,
Péter Vancsó,
Konrád Kandrai,
Márton Szendrő,
Gergely Németh,
Miklós Németh,
Áron Pekker,
József S. Pap,
Péter Petrik,
Katalin Kamarás,
Levente Tapasztó,
Péter Nemes-Incze
Abstract:
The behavior of single layer van der Waals (vdW) materials is profoundly influenced by the immediate atomic environment at their surface, a prime example being the myriad of emergent properties in artificial heterostructures. Equally significant are adsorbates deposited onto their surface from ambient. While vdW interfaces are well understood, our knowledge regarding atmospheric contamination is s…
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The behavior of single layer van der Waals (vdW) materials is profoundly influenced by the immediate atomic environment at their surface, a prime example being the myriad of emergent properties in artificial heterostructures. Equally significant are adsorbates deposited onto their surface from ambient. While vdW interfaces are well understood, our knowledge regarding atmospheric contamination is severely limited. Here we show that the common ambient contamination on the surface of: graphene, graphite, hBN and MoS2 is composed of a self-organized molecular layer, which forms during a few days of ambient exposure. Using low-temperature STM measurements we image the atomic structure of this adlayer and in combination with infrared spectroscopy identify the contaminant molecules as normal alkanes with lengths of 20-26 carbon atoms. Through its ability to self-organize, the alkane layer displaces the manifold other airborne contaminant species, capping the surface of vdW materials and possibly dominating their interaction with the environment.
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Submitted 9 November, 2022; v1 submitted 3 July, 2022;
originally announced July 2022.
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Revealing the topological phase diagram of ZrTe$_5$ using the complex strain fields of microbubbles
Authors:
Zoltán Tajkov,
Dániel Nagy,
Konrád Kandrai,
János Koltai,
László Oroszlány,
Péter Süle,
Zsolt E. Horváth,
Péter Vancsó,
Levente Tapasztó,
Péter Nemes-Incze
Abstract:
Topological materials host robust properties, unaffected by microscopic perturbations, owing to the global topological properties of the bulk electron system. Materials in which the topological invariant can be changed by easily tuning external parameters are especially sought after. Zirconium pentatelluride (ZrTe$_5$) is one of a few experimentally available materials that reside close to the bou…
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Topological materials host robust properties, unaffected by microscopic perturbations, owing to the global topological properties of the bulk electron system. Materials in which the topological invariant can be changed by easily tuning external parameters are especially sought after. Zirconium pentatelluride (ZrTe$_5$) is one of a few experimentally available materials that reside close to the boundary of a topological phase transition, allowing the switching of its invariant by mechanical strain. Here, we unambiguously identify a topological insulator - metal transition as a function of strain, by a combination of ab initio calculations and direct measurements of the local charge density. Our model quantitatively describes the response to complex strain patterns found in bubbles of few layer ZrTe$_5$ without fitting parameters, reproducing the mechanical deformation dependent closing of the band gap observed using scanning tunneling microscopy. We calculate the topological phase diagram of ZrTe$_5$ and identify the phase at equilibrium, enabling the design of device architectures which exploit the unique topological switching characteristics of the system.
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Submitted 15 March, 2022;
originally announced March 2022.
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Observation of competing, correlated ground states in the flat band of rhombohedral graphite
Authors:
Imre Hagymási,
Mohammad Syahid Mohd Isa,
Zoltán Tajkov,
Krisztián Márity,
Oroszlány László,
János Koltai,
Assem Alassaf,
Péter Kun,
Konrád Kandrai,
András Pálinkás,
Péter Vancsó,
Levente Tapasztó,
Péter Nemes-Incze
Abstract:
In crystalline solids the interactions of charge and spin can result in a variety of emergent quantum ground states, especially in partially filled, topological flat bands such as Landau levels or in 'magic-angle' bilayer graphene. Much less explored is rhombohedral graphite (RG), perhaps the simplest and structurally most perfect condensed matter system to host a flat band protected by symmetry.…
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In crystalline solids the interactions of charge and spin can result in a variety of emergent quantum ground states, especially in partially filled, topological flat bands such as Landau levels or in 'magic-angle' bilayer graphene. Much less explored is rhombohedral graphite (RG), perhaps the simplest and structurally most perfect condensed matter system to host a flat band protected by symmetry. By scanning tunneling microscopy we map the flat band charge density of 8, 10 and 17 layers and identify a domain structure emerging from a competition between a sublattice antiferromagnetic insulator and a gapless correlated paramagnet. Our density-matrix renormalization group calculations explain the observed features and demonstrate that the correlations are fundamentally different from graphene based magnetism identified until now, forming the ground state of a quantum magnet. Our work establishes RG as a new platform to study many-body interactions beyond the mean-field approach, where quantum fluctuations and entanglement dominate.
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Submitted 15 July, 2022; v1 submitted 26 January, 2022;
originally announced January 2022.
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Large-area nanoengineering of graphene corrugations for visible-frequency graphene plasmons
Authors:
Gergely Dobrik,
Peter Nemes-Incze,
Bruno Majerus,
Peter Sule,
Peter Vancso,
Gabor Piszter,
Miklos Menyhard,
Benjamin Kalas,
Peter Petrik,
Luc Henrard,
Levente Tapaszto
Abstract:
Quantum confinement of graphene carriers is an effective way to engineer its properties. It is commonly realized through physical edges that are associated with the deterioration of mobility and strong suppression of plasmon resonances. Here, we demonstrate a simple, large-area, edge-free nanostructuring technique, based on amplifying random nanoscale structural corrugations to a level where they…
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Quantum confinement of graphene carriers is an effective way to engineer its properties. It is commonly realized through physical edges that are associated with the deterioration of mobility and strong suppression of plasmon resonances. Here, we demonstrate a simple, large-area, edge-free nanostructuring technique, based on amplifying random nanoscale structural corrugations to a level where they efficiently confine carriers, without inducing significant inter-valley scattering. This soft confinement, allows the low-loss lateral ultra-confinement of graphene plasmons, scaling up their resonance frequency from native terahertz to commercially relevant visible range. Visible graphene plasmons localized into nanocorrugations mediate several orders of magnitude stronger light-matter interactions (Raman enhancement) than those previously achieved with graphene, enabling the detection of specific molecules from femtomolar solutions or ambient air. Moreover, nanocorrugated graphene sheets also support propagating visible plasmon modes revealed by scanning near-field optical microscopy observation of their interference patterns.
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Submitted 19 January, 2022;
originally announced January 2022.
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Robust quantum point contact operation of narrow graphene constrictions patterned by AFM cleavage lithography
Authors:
Péter Kun,
Bálint Fülöp,
Gergely Dobrik,
Péter Nemes-Incze,
István Endre Lukács,
Szabolcs Csonka,
Chanyong Hwang,
Levente Tapasztó
Abstract:
Detecting conductance quantization in graphene nanostructures turned out more challenging than expected. The observation of well-defined conductance plateaus through graphene nanoconstrictions so far has only been accessible in the highest quality suspended or h-BN encapsulated devices. However, reaching low conductance quanta in zero magnetic field, is a delicate task even with such ultra-high mo…
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Detecting conductance quantization in graphene nanostructures turned out more challenging than expected. The observation of well-defined conductance plateaus through graphene nanoconstrictions so far has only been accessible in the highest quality suspended or h-BN encapsulated devices. However, reaching low conductance quanta in zero magnetic field, is a delicate task even with such ultra-high mobility devices. Here, we demonstrate a simple AFM-based nanopatterning technique for defining graphene constrictions with high precision (down to 10 nm width) and reduced edge-roughness (+/- 1 nm). The patterning process is based on the in-plane mechanical cleavage of graphene by the AFM tip, along its high symmetry crystallographic directions. As-defined, narrow graphene constrictions with improved edge quality enable an unprecedentedly robust QPC operation, allowing the observation of conductance quantization even on standard $SiO_2/Si$ substrates, down to low conductance quanta. Conductance plateaus, were observed at $ne^2/h$, evenly spaced by $2e^2/h$ (corresponding to n = 3, 5, 7, 9, 11) in the absence of an external magnetic field, while spaced by $e^2/h$ (n = 1, 2, 3, 4, 5, 6) in 8T magnetic field.
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Submitted 8 October, 2020;
originally announced October 2020.
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Ultra-flat twisted superlattices in 2D heterostructures
Authors:
Márton Szendrő,
Péter Süle,
Gergely Dobrik,
Levente Tapasztó
Abstract:
Moiré-superlattices are ubiquitous in 2D heterostructures, strongly influencing their electronic properties. They give rise to new Dirac cones and are also at the origin of the superconductivity observed in magic-angle bilayer graphene. The modulation amplitude (corrugation) is an important yet largely unexplored parameter in defining the properties of 2D superlattices. The generally accepted view…
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Moiré-superlattices are ubiquitous in 2D heterostructures, strongly influencing their electronic properties. They give rise to new Dirac cones and are also at the origin of the superconductivity observed in magic-angle bilayer graphene. The modulation amplitude (corrugation) is an important yet largely unexplored parameter in defining the properties of 2D superlattices. The generally accepted view is that the corrugation monotonically decreases with increasing twist angle, while its effects on the electronic structure diminish as the layers become progressively decoupled. Here we found by lattice relaxation of around 8000 different Moiré-superstructures using high scale Classical Molecular Simulations combined with analytical calculations, that even a small amount of strain can substantially change this picture, giving rise to more complex behavior of superlattice corrugation as a function of twist angle. One of the most surprising findings is the emergence of an ultra-flat phase that can be present for arbitrary small twist angle having a much lower corrugation level than the decoupled phase at large angles. A possible experimental realization of the ultra-flat state is revealed by Scanning Tunneling Microscopy (STM) investigations of the graphene/graphite system.
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Submitted 30 January, 2020;
originally announced January 2020.
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Spontaneous doping of the basal plane of MoS2 single-layers through oxygen substitution under ambient conditions
Authors:
János Pető,
Tamás Ollár,
Péter Vancsó,
Zakhar I. Popov,
Gábor Zsolt Magda,
Gergely Dobrik,
Chanyong Hwang,
Pavel B. Sorokin,
Levente Tapasztó
Abstract:
The chemical inertness of the defect-free basal plane confers environmental stability to MoS2 single-layers, but it also limits their chemical versatility and catalytic activity. The stability of the pristine MoS2 basal plane against oxidation under ambient conditions is a widely accepted assumption in the interpretation of various studies and applications. However, single-atom level structural in…
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The chemical inertness of the defect-free basal plane confers environmental stability to MoS2 single-layers, but it also limits their chemical versatility and catalytic activity. The stability of the pristine MoS2 basal plane against oxidation under ambient conditions is a widely accepted assumption in the interpretation of various studies and applications. However, single-atom level structural investigations reported here reveal that oxygen atoms spontaneously incorporate into the basal plane of MoS2 single layers during ambient exposure. Our scanning tunneling microscopy investigations reveal a slow oxygen substitution reaction, upon which individual sulfur atoms are one by one replaced by oxygen, giving rise to solid solution type 2D MoS2-xOx crystals. O substitution sites present all over the basal plane act as single-atomic active reaction centers, substantially increasing the catalytic activity of the entire MoS2 basal plane for the electrochemical H2 evolution reaction.
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Submitted 2 April, 2019;
originally announced April 2019.
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Signature of large-gap quantum spin Hall state in the layered mineral jacutingaite
Authors:
Konrád Kandrai,
Gergő Kukucska,
Péter Vancsó,
János Koltai,
György Baranka,
Zsolt E. Horváth,
Ákos Hoffmann,
Anna Vymazalová,
Levente Tapasztó,
Péter Nemes-Incze
Abstract:
Quantum spin Hall (QSH) insulators are materials that feature an insulating bulk and host edge states protected by time-reversal symmetry. The helical locking of spin and momentum in these states suppresses backscattering of charge carriers, promising applications from low-power electronics to quantum computing. A major challenge for applications is the identification of large gap QSH materials, w…
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Quantum spin Hall (QSH) insulators are materials that feature an insulating bulk and host edge states protected by time-reversal symmetry. The helical locking of spin and momentum in these states suppresses backscattering of charge carriers, promising applications from low-power electronics to quantum computing. A major challenge for applications is the identification of large gap QSH materials, which would enable room temperature dissipationless transport in their edge states. Here we show that the layered mineral jacutingaite (Pt$_2$HgSe$_3$) is a candidate QSH material, realizing the long sought after the Kane-Mele insulator. Using scanning tunneling microscopy, we measure a band gap of 110 meV, above room temperature, and identify the hallmark edge states. By calculating the $\mathbb{Z}_2$ invariant, we confirm the topological nature of the gap. Being a layered mineral, it is stable in air and can be thinned down to a few atomic layers by mechanical exfoliation. Furthermore, we demonstrate that it can be integrated into heterostructures with other two-dimensional materials. This adds a topological insulator to the 2D quantum material library, greatly expanding the possibilities for tuning 2D electron systems using stacks of layered materials.
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Submitted 19 June, 2020; v1 submitted 6 March, 2019;
originally announced March 2019.
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Large intravalley scattering due to pseudo-magnetic fields in crumpled graphene
Authors:
Péter Kun,
Gergő Kukucska,
Gergely Dobrik,
János Koltai,
Jenő Kürti,
László P. Biró,
Levente Tapasztó,
Péter Nemes-Incze
Abstract:
The pseudo-magnetic field generated by mechanical strain in graphene can have dramatic consequences on the behavior of electrons and holes. Here we show that pseudo-magnetic field fluctuations present in crumpled graphene can induce significant intravalley scattering of charge carriers. We detect this by measuring the confocal Raman spectra of crumpled areas, where we observe an increase of the D'…
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The pseudo-magnetic field generated by mechanical strain in graphene can have dramatic consequences on the behavior of electrons and holes. Here we show that pseudo-magnetic field fluctuations present in crumpled graphene can induce significant intravalley scattering of charge carriers. We detect this by measuring the confocal Raman spectra of crumpled areas, where we observe an increase of the D'/D peak intensity ratio by up to a factor of 300. We reproduce our observations by numerical calculation of the double resonant Raman spectra and interpret the results as experimental evidence of the phase shift suffered by Dirac charge carriers in the presence of a pseudo-magnetic field. This lifts the restriction on complete intravalley backscattering of Dirac fermions.
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Submitted 26 February, 2019; v1 submitted 26 January, 2018;
originally announced January 2018.
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Exfoliation of single layer BiTeI flakes
Authors:
Bálint Fülöp,
Zoltán Tajkov,
János Pető,
Péter Kun,
János Koltai,
László Oroszlány,
Endre Tóvári,
Hiroshi Murakawa,
Yoshinori Tokura,
Sándor Bordács,
Levente Tapasztó,
Szabolcs Csonka
Abstract:
Spin orbit interaction can be strongly boosted when a heavy element is embedded into an inversion asymmetric crystal field. A simple structure to realize this concept in a 2D crystal contains three atomic layers, a middle one built up from heavy elements generating strong atomic spin-orbit interaction and two neighboring atomic layers with different electron negativity. BiTeI is a promising candid…
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Spin orbit interaction can be strongly boosted when a heavy element is embedded into an inversion asymmetric crystal field. A simple structure to realize this concept in a 2D crystal contains three atomic layers, a middle one built up from heavy elements generating strong atomic spin-orbit interaction and two neighboring atomic layers with different electron negativity. BiTeI is a promising candidate for such a 2D crystal, since it contains heavy Bi layer between Te and I layers. Recently the bulk form of BiTeI attracted considerable attention due to its giant Rashba interaction, however, 2D form of this crystal was not yet created. In this work we report the first exfoliation of single layer BiTeI using a recently developed exfoliation technique on stripped gold. Our combined scanning probe studies and first principles calculations show that SL BiTeI flakes with sizes of 100 $μ$m were achieved which are stable at ambient conditions. The giant Rashba splitting and spin-momentum locking of this new member of 2D crystals open the way towards novel spintronic applications and synthetic topological heterostructures.
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Submitted 27 September, 2017;
originally announced September 2017.
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Novel graphene/Sn and graphene/SnOx hybrid nanostructures: Induced superconductivity and band gaps revealed by scanning probe measurements
Authors:
András Pálinkás,
György Molnár,
Gábor Zsolt Magda,
Chanyong Hwang,
Levente Tapasztó,
Peter Samuely,
Pavol Szabó,
Zoltán Osváth
Abstract:
The development of functional composite nanomaterials based on graphene and metal nanoparticles (NPs) is currently the subject of intense research interest. In this study we report the preparation of novel type of graphene/Sn and graphene/SnOx (1 < x < 2) hybrid nanostructures and their investigation by scanning probe methods. First, we prepare Sn NPs by evaporating 7 - 8 nm tin on highly oriented…
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The development of functional composite nanomaterials based on graphene and metal nanoparticles (NPs) is currently the subject of intense research interest. In this study we report the preparation of novel type of graphene/Sn and graphene/SnOx (1 < x < 2) hybrid nanostructures and their investigation by scanning probe methods. First, we prepare Sn NPs by evaporating 7 - 8 nm tin on highly oriented pyrolytic graphite substrates. Graphene/Sn nanostructures are obtained by transferring graphene on top of the tin NPs immediately after evaporation. We show by scanning tunnelling microscopy (STM) and spectroscopy (STS) that tin NPs reduce significantly the environmental p-type doping of graphene. Furthermore, we demonstrate by low-temperature STM and STS measurements that superconductivity is induced in graphene, either directly supported by Sn NPs or suspended between them. Additionally, we prepare SnOx NPs by annealing the evaporated tin at 500 ${^o}$C. STS measurements performed on hybrid graphene/SnOx nanostructures reveal the electronic band gap of SnOx NPs. The results can open new avenues for the fabrication of novel hybrid superconducting nanomaterials with designed structures and morphologies.
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Submitted 13 September, 2017;
originally announced September 2017.
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Preparing local strain patterns in graphene by atomic force microscope based indentation
Authors:
Péter Nemes-Incze,
Gergő Kukucska,
János Koltai,
Jenő Kürti,
Chanyong Hwang,
Levente Tapasztó,
László P. Biró
Abstract:
Patterning graphene into various mesoscopic devices such as nanoribbons, quantum dots, etc. by lithographic techniques has enabled the guiding and manipulation of graphene's Dirac-type charge carriers. Graphene, with well-defined strain patterns, holds promise of similarly rich physics while avoiding the problems created by the hard to control edge configuration of lithographically prepared device…
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Patterning graphene into various mesoscopic devices such as nanoribbons, quantum dots, etc. by lithographic techniques has enabled the guiding and manipulation of graphene's Dirac-type charge carriers. Graphene, with well-defined strain patterns, holds promise of similarly rich physics while avoiding the problems created by the hard to control edge configuration of lithographically prepared devices. To engineer the properties of graphene via mechanical deformation, versatile new techniques are needed to pattern strain profiles in a controlled manner. Here we present a process by which strain can be created in substrate supported graphene layers. Our atomic force microscope-based technique opens up new possibilities in tailoring the properties of graphene using mechanical strain.
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Submitted 8 June, 2017; v1 submitted 16 February, 2017;
originally announced February 2017.
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Highly wear-resistant and low-friction Si3N4 composites by addition of graphene nanoplatelets approaching the 2D limit
Authors:
Orsolya Tapaszto,
Jan Balko,
Viktor Puchy,
Peter Kun,
Gergely Dobrik,
Zsolt Fogarassy,
Zsolt Endre Horvath,
Jan Dusza,
Katalin Balazsi,
Csaba Balazsi,
Levente Tapaszto
Abstract:
Graphene nanoplatelets (GNPs) have emerged as one of the most promising filler materials for improving the tribological performance of ceramic composites due to their outstanding solid lubricant properties as well as mechanical and thermal stability. Yet, the addition of GNPs has so far provided only a very limited improvement in the tribological properties of ceramics, particularly concerning the…
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Graphene nanoplatelets (GNPs) have emerged as one of the most promising filler materials for improving the tribological performance of ceramic composites due to their outstanding solid lubricant properties as well as mechanical and thermal stability. Yet, the addition of GNPs has so far provided only a very limited improvement in the tribological properties of ceramics, particularly concerning the reduction of their friction coefficient. This is most likely due to the challenges of achieving a lubricating and protecting tribo-film through a high GNP coverage of the exposed surfaces. Here we show that this can be achieved by efficiently increasing the exfoliation degree of GNPs down to the few-layer (FL) range. By employing FL-GNPs as filler material, the wear resistance of Si3N4 composites can be increased by about twenty times, the friction coefficient reduced to nearly its half, while the other mechanical properties are also preserved or improved. Using confocal Raman microscopy, we were able to demonstrate the formation of a continuous FL- GNP tribo-film, already at 5wt% FL-GNP content.
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Submitted 10 February, 2017;
originally announced February 2017.
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A magnetic phase-transition graphene transistor with tunable spin polarization
Authors:
Peter Vancso,
Imre Hagymasi,
Levente Tapaszto
Abstract:
Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge and spin signals, integrated within the simplest three-terminal device configuration. In a conventional FET device, a gate electrode is employed to tune the Fe…
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Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge and spin signals, integrated within the simplest three-terminal device configuration. In a conventional FET device, a gate electrode is employed to tune the Fermi level of the system in and out of a static bandgap. By contrast, in the switching mechanism proposed here, the applied gate voltage can dynamically open and close an interaction gap, with only a minor shift of the Fermi level. Furthermore, the strong interplay of the band structure and edge spin configuration in zigzag ribbons enables such transistors to carry spin polarized current without employing an external magnetic field or ferromagnetic contacts. Using an experimentally validated theoretical model, we show that such transistors can switch at low voltages and high speed, and the spin polarization of the current can be tuned from 0% to 50% by using the same back gate electrode. Furthermore, such devices are expected to be robust against edge irregularities and can operate at room temperature. Controlling both charge and spin signal within the simplest FET device configuration could open up new routes in data processing with graphene based devices.
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Submitted 8 February, 2017;
originally announced February 2017.
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Room temperature magnetic order on zigzag edges of narrow graphene nanoribbons
Authors:
Gabor Zsolt Magda,
Xiaozhan Jin,
Imre Hagymasi,
Peter Vancso,
Zoltan Osvath,
Peter Nemes-Incze,
Chanyong Hwang,
Laszlo P. Biro,
Levente Tapaszto
Abstract:
Magnetic order emerging in otherwise non-magnetic materials as carbon is a paradigmatic example of a novel type of s-p electron magnetism predicted to be of exceptional high-temperature stability. It has been demonstrated that atomic scale structural defects of graphene can host unpaired spins. However, it is still unclear under which conditions long-range magnetic order can emerge from such defec…
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Magnetic order emerging in otherwise non-magnetic materials as carbon is a paradigmatic example of a novel type of s-p electron magnetism predicted to be of exceptional high-temperature stability. It has been demonstrated that atomic scale structural defects of graphene can host unpaired spins. However, it is still unclear under which conditions long-range magnetic order can emerge from such defect-bound magnetic moments. Here we propose that in contrast to random defect distributions, atomic scale engineering of graphene edges with specific crystallographic orientation, comprising edge atoms only from one sub-lattice of the bipartite graphene lattice, can give rise to a robust magnetic order. We employ a nanofabrication technique based on Scanning Tunneling Microscopy to define graphene nanoribbons with nanometer precision and well-defined crystallographic edge orientations. While armchair ribbons display quantum confinement gap, zigzag ribbons narrower than 7 nm reveal a bandgap of about 0.2 - 0.3 eV, which can be identified as a signature of interaction induced spin ordering along their edges. Moreover, a semiconductor to metal transition is revealed upon increasing the ribbon width, indicating the switching of the magnetic coupling between opposite ribbon edges from antiferromagnetic to ferromagnetic configuration. We found that the magnetic order on graphene edges of controlled zigzag orientation can be stable even at room temperature, raising hope for graphene-based spintronic devices operating under ambient conditions.
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Submitted 5 November, 2014;
originally announced November 2014.
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Rotation misorientated graphene moire superlattices on Cu(111): classical molecular dynamics simulations and scanning tunneling microscopy studies
Authors:
P. Süle,
M. Szendrő,
C. Hwang,
L. Tapasztó
Abstract:
Graphene on copper is a system of high technological relevance, as Cu is one of the most widely used substrates for the CVD growth of graphene. However, very little is known about the details of their interaction. One approach to gain such information is studying the superlattices emerging due to the mismatch of the two crystal lattices. However, graphene on copper is a low-corrugated system makin…
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Graphene on copper is a system of high technological relevance, as Cu is one of the most widely used substrates for the CVD growth of graphene. However, very little is known about the details of their interaction. One approach to gain such information is studying the superlattices emerging due to the mismatch of the two crystal lattices. However, graphene on copper is a low-corrugated system making both their experimental and theoretical study highly challenging. Here, we report the observation of a new rotational Moire superlattice of CVD graphene on Cu (111), characterized by a periodicity of $1.5 \pm 0.05$ nm and corrugation of $0.15 \pm 0.05$ $\hboxÅ$ , as measured by Scanning Tunneling Microscopy. To understand the observed superlattice we have developed a newly parameterized Tersoff-potential for the graphene/Cu (111) interface fitted to nonlocal van der Waals density functional theory (DFT) calculations. The interfacial force field with time-lapsed CMD provides superlattices in good quantitative agreement with the experimental results, for a misorientation angle of $10.4 \pm 0.5,^{\circ}$ without any further parameter adjustment. Furthermore, the CMD simulations predict the existence of two non-equivalent high-symmetry directions of the Moiré pattern that could also be identified in the experimental STM images.
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Submitted 26 August, 2014; v1 submitted 8 January, 2014;
originally announced January 2014.
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Breakdown of continuum mechanics for nanometer-wavelength rippling of graphene
Authors:
Levente Tapaszto,
Traian Dumitrica,
Sung J. Kim,
Peter Nemes-Incze,
Chanyong Hwang,
Laszlo P. Biro
Abstract:
Understanding how the mechanical behavior of materials deviates at the nanoscale from the macroscopically established concepts is a key challenge of particular importance for graphene, given the complex interplay between its nanoscale morphology and electronic properties. In this work, the (sub-) nanometer wavelength periodic rippling of suspended graphene nanomembranes has been realized by therma…
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Understanding how the mechanical behavior of materials deviates at the nanoscale from the macroscopically established concepts is a key challenge of particular importance for graphene, given the complex interplay between its nanoscale morphology and electronic properties. In this work, the (sub-) nanometer wavelength periodic rippling of suspended graphene nanomembranes has been realized by thermal strain-engineering and investigated using Scanning Tunneling Microscopy. This allows us to explore the rippling of a crystalline membrane with wavelengths comparable to its lattice constant. The observed nanorippling mode violates the predictions of the continuum model, and evidences the breakdown of the plate idealization of the graphene monolayer. Nevertheless, microscopic simulations based on a quantum mechanical description of the chemical binding accurately describe the observed rippling mode and elucidate the origin of the continuum model breakdown. Spatially resolved tunneling spectroscopy measurements indicate a substantial influence of the nanoripples on the local electronic structure of graphene and reveal the formation of one-dimensional electronic superlattices.
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Submitted 25 October, 2012;
originally announced October 2012.
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Revealing the grain structure of graphene grown by chemical vapor deposition
Authors:
Péter Nemes - Incze,
Kwon Jae Yoo,
Levente Tapasztó,
Gergely Dobrik,
János Lábár,
Zsolt E. Horváth,
Chanyong Hwang,
László Péter Biró
Abstract:
The physical processes occurring in the presence of disorder: point defects, grain boundaries, etc. may have detrimental effects on the electronic properties of graphene. Here we present an approach to reveal the grain structure of graphene by the selective oxidation of defects and subsequent atomic force microscopy analysis. This technique offers a quick and easy alternative to different electron…
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The physical processes occurring in the presence of disorder: point defects, grain boundaries, etc. may have detrimental effects on the electronic properties of graphene. Here we present an approach to reveal the grain structure of graphene by the selective oxidation of defects and subsequent atomic force microscopy analysis. This technique offers a quick and easy alternative to different electron microscopy and diffraction methods and may be used to give quick feedback on the quality of graphene samples grown by chemical vapor deposition.
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Submitted 18 July, 2011;
originally announced July 2011.
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Tuning the electronic structure of graphene by ion irradiation
Authors:
Levente Tapaszto,
Gergely Dobrik,
Peter Nemes-Incze,
Gabor Vertesy,
Philippe Lambin,
Laszlo P Biro
Abstract:
Mechanically exfoliated graphene layers deposited on SiO2 substrate were irradiated with Ar+ ions in order to experimentally study the effect of atomic scale defects and disorder on the low-energy electronic structure of graphene. The irradiated samples were investigated by scanning tunneling microscopy and spectroscopy measurements, which reveal that defect sites, besides acting as scattering c…
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Mechanically exfoliated graphene layers deposited on SiO2 substrate were irradiated with Ar+ ions in order to experimentally study the effect of atomic scale defects and disorder on the low-energy electronic structure of graphene. The irradiated samples were investigated by scanning tunneling microscopy and spectroscopy measurements, which reveal that defect sites, besides acting as scattering centers for electrons through local modification of the on-site potential, also induce disorder in the hopping amplitudes. The most important consequence of the induced disorder is the substantial reduction in the Fermi velocity, revealed by bias-dependent imaging of electron-density oscillations observed near defect sites.
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Submitted 20 January, 2009;
originally announced January 2009.
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Tailoring the atomic structure of graphene nanoribbons by STM lithography
Authors:
Levente Tapaszto,
Gergely Dobrik,
Philippe Lambin,
Laszlo P Biro
Abstract:
The practical realization of nano-scale electronics faces two major challenges: the precise engineering of the building blocks and their assembly into functional circuits. In spite of the exceptional electronic properties of carbon nanotubes only basic demonstration-devices have been realized by time-consuming processes. This is mainly due to the lack of selective growth and reliable assembly pr…
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The practical realization of nano-scale electronics faces two major challenges: the precise engineering of the building blocks and their assembly into functional circuits. In spite of the exceptional electronic properties of carbon nanotubes only basic demonstration-devices have been realized by time-consuming processes. This is mainly due to the lack of selective growth and reliable assembly processes for nanotubes. However, graphene offers an attractive alternative. Here we report the patterning of graphene nanoribbons (GNRs) and bent junctions with nanometer precision, well-defined widths and predetermined crystallographic orientations allowing us to fully engineer their electronic structure using scanning tunneling microscope (STM) lithography. The atomic structure and electronic properties of the ribbons have been investigated by STM and tunneling spectroscopy measurements. Opening of confinement gaps up to 0.5 eV, allowing room temperature operation of GNR-based devices, is reported. This method avoids the difficulties of assembling nano-scale components and allows the realization of complete integrated circuits, operating as room temperature ballistic electronic devices.
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Submitted 10 June, 2008;
originally announced June 2008.
