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Quantum magnetic oscillations in the absence of closed electron trajectories
Authors:
Z. E. Krix,
O. A. Tkachenko,
V. A. Tkachenko,
D. Q. Wang,
O. Klochan,
A. R. Hamilton,
O. P. Sushkov
Abstract:
Quantum magnetic oscillations in crystals are typically understood in terms of Bohr-Sommerfeld quantisation, the frequency of oscillation is given by the area of a closed electron trajectory. However, since the 1970s, oscillations have been observed with frequencies that do not correspond to closed electron trajectories and this effect has remained not fully understood. Previous theory has focused…
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Quantum magnetic oscillations in crystals are typically understood in terms of Bohr-Sommerfeld quantisation, the frequency of oscillation is given by the area of a closed electron trajectory. However, since the 1970s, oscillations have been observed with frequencies that do not correspond to closed electron trajectories and this effect has remained not fully understood. Previous theory has focused on explaining the effect using various kinetic mechanisms, however, frequencies without a closed electron orbit have been observed in equilibrium and so a kinetic mechanism cannot be the entire story. In this work we develop a theory which explains these frequencies in equilibrium and can thus be used to understand measurements of both Shubnikov-de Haas and de Haas-van Alphen oscillations. We show, analytically, that these frequencies arise due to multi-electron correlations. We then extend our theory to explain a recent experiment on artificial crystals in GaAs two-dimensional electron gases, which revealed for the first time magnetic oscillations having frequencies that are half of those previously observed. We show that the half-frequencies arise in equilibrium from single-particle dynamics with account of impurities. Our analytic results are reinforced by exact numerics, which we also use clarify prior works on the kinetic regime.
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Submitted 6 April, 2024;
originally announced April 2024.
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Tuning the bandstructure of electrons in a two-dimensional artificial electrostatic crystal in GaAs quantum wells
Authors:
Daisy Q. Wang,
Zeb Krix,
Olga A. Tkachenko,
Vitaly A. Tkachenko,
Chong Chen,
Ian Farrer,
David A. Ritchie,
Oleg P. Sushkov,
Alexander R. Hamilton,
Oleh Klochan
Abstract:
The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest w…
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The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest while allowing precise control of key parameters. Cold atoms trapped in optical lattices provide great flexibility and tunability [1, 2], but cannot replicate the long range Coulomb interactions and long range hopping that drive collective phenomena in real crystals. Solid state approaches support long range hopping and interactions, but previous attempts with laterally patterned semiconductor systems were not able to create tunable low disorder artificial crystals, while approaches based on Moire superlattices in twisted two-dimensional (2D) materials [3, 4] have limited tunability and control of lattice geometry. Here we demonstrate the formation of highly tunable artificial crystals by superimposing a periodic electrostatic potential on the 2D electron gas in an ultrashallow (25 nm deep) GaAs quantum well. The 100 nm period artificial crystal is identified by the formation of a new bandstructure, different from the original cubic crystal and unique to the artificial triangular lattice: transport measurements show the Hall coefficient changing sign as the chemical potential sweeps through the artificial bands. Uniquely, the artificial bandstructure can be continuously tuned from parabolic free-electron bands into linear graphene-like and flat kagome-like bands in a single device. This approach allows the formation arbitrary geometry 2D artificial crystals, opening a new route to studying collective quantum states.
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Submitted 20 February, 2024;
originally announced February 2024.
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Geometric control of universal hydrodynamic flow in a two dimensional electron fluid
Authors:
Aydın Cem Keser,
Daisy Q. Wang,
Oleh Klochan,
Derek Y. H. Ho,
Olga A. Tkachenko,
Vitaly A. Tkachenko,
Dimitrie Culcer,
Shaffique Adam,
Ian Farrer,
David A. Ritchie,
Oleg P. Sushkov,
Alexander R. Hamilton
Abstract:
Fluid dynamics is one of the cornerstones of modern physics and has recently found applications in the transport of electrons in solids. In most solids electron transport is dominated by extrinsic factors, such as sample geometry and scattering from impurities. However in the hydrodynamic regime Coulomb interactions transform the electron motion from independent particles to the collective motion…
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Fluid dynamics is one of the cornerstones of modern physics and has recently found applications in the transport of electrons in solids. In most solids electron transport is dominated by extrinsic factors, such as sample geometry and scattering from impurities. However in the hydrodynamic regime Coulomb interactions transform the electron motion from independent particles to the collective motion of a viscous `electron fluid'. The fluid viscosity is an intrinsic property of the electron system, determined solely by the electron-electron interactions. Resolving the universal intrinsic viscosity is challenging, as it only affects the resistance through interactions with the sample boundaries, whose roughness is not only unknown but also varies from device to device. Here we eliminate all unknown parameters by fabricating samples with smooth sidewalls to achieve the perfect slip boundary condition, which has been elusive both in molecular fluids and electronic systems. We engineer the device geometry to create viscous dissipation and reveal the true intrinsic hydrodynamic properties of a 2D system. We observe a clear transition from ballistic to hydrodynamic electron motion, driven by both temperature and magnetic field. We directly measure the viscosity and electron-electron scattering lifetime (the Fermi quasiparticle lifetime) over a wide temperature range without fitting parameters, and show they have a strong dependence on electron density that cannot be explained by conventional theories based on the Random Phase Approximation.
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Submitted 17 March, 2021;
originally announced March 2021.
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Giant terahertz photoconductance of tunneling point contacts
Authors:
M. Otteneder,
Z. D. Kvon,
O. A. Tkachenko,
V. A. Tkachenko,
A. S. Jaroshevich,
E. E. Rodyakina,
A. V. Latyshev,
S. D. Ganichev
Abstract:
We report on the observation of the giant photoconductance of a quantum point contact (QPC) in tunneling regime excited by terahertz radiation. Studied QPCs are formed in a GaAs/AlGaAs heterostructure with a high-electron-mobility two-dimensional electron gas. We demonstrate that irradiation of strongly negatively biased QPCs by laser radiation with frequency f = 0.69 THz and intensity 50 mW/cm^2…
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We report on the observation of the giant photoconductance of a quantum point contact (QPC) in tunneling regime excited by terahertz radiation. Studied QPCs are formed in a GaAs/AlGaAs heterostructure with a high-electron-mobility two-dimensional electron gas. We demonstrate that irradiation of strongly negatively biased QPCs by laser radiation with frequency f = 0.69 THz and intensity 50 mW/cm^2 results in two orders of magnitude enhancement of the QPC conductance. The effect has a superlinear intensity dependence and increases with the dark conductivity decrease. It is also characterized by strong polarization and frequency dependencies. We demonstrate that all experimental findings can be well explained by the photon-mediated tunneling through the QPC. Corresponding calculations are in a good agreement with the experiment.
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Submitted 21 December, 2017;
originally announced December 2017.
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Mechanisms for strong anisotropy of in-plane g-factors in hole based quantum point contacts
Authors:
D. S. Miserev,
A. Srinivasan,
O. A. Tkachenko,
V. A. Tkachenko,
I. Farrer,
D. A. Ritchie,
A. R. Hamilton,
O. P. Sushkov
Abstract:
In-plane hole g-factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and confirmed in a number of publications, has remained an open problem. In this work, we present systematic experimental studies to disentangle different mechanisms contri…
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In-plane hole g-factors measured in quantum point contacts based on p-type heterostructures strongly depend on the orientation of the magnetic field with respect to the electric current. This effect, first reported a decade ago and confirmed in a number of publications, has remained an open problem. In this work, we present systematic experimental studies to disentangle different mechanisms contributing to the effect and develop the theory which describes it successfully. We show that there is a new mechanism for the anisotropy related to the existence of an additional $B_+k_-^4σ_+$ effective Zeeman interaction for holes, which is kinematically different from the standard single Zeeman term $B_-k_-^2σ_+$ considered until now.
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Submitted 13 September, 2017; v1 submitted 2 December, 2016;
originally announced December 2016.
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Effects of Coulomb screening and disorder on artificial graphene based on nanopatterned semiconductor
Authors:
O. A. Tkachenko,
V. A. Tkachenko,
I. S. Terekhov,
O. P. Sushkov
Abstract:
A residual disorder in the gate system is the main problem on the way to create artificial graphene based on two-dimensional electron gas. The disorder can be significantly screened/reduced due to the many-body effects. To analyse the screening/disorder problem we consider AlGaAs/GaAs/AlGaAs heterostructure with two metallic gates. We demonstrate that the design least susceptible to the disorder c…
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A residual disorder in the gate system is the main problem on the way to create artificial graphene based on two-dimensional electron gas. The disorder can be significantly screened/reduced due to the many-body effects. To analyse the screening/disorder problem we consider AlGaAs/GaAs/AlGaAs heterostructure with two metallic gates. We demonstrate that the design least susceptible to the disorder corresponds to the weak coupling regime (opposite to tight binding) which is realised via system of quantum anti-dots. The most relevant type of disorder is the area disorder which is a random variation of areas of quantum anti-dots. The area disorder results in formation of puddles. Other types of disorder, the position disorder and the shape disorder, are practically irrelevant. The formation/importance of puddles dramatically depends on parameters of the nanopatterned heterostructure. A variation of the parameters by 20--30\% can change the relative amplitude of puddles by orders of magnitude. Based on this analysis we formulate criteria for the acceptable design of the heterostructure aimed at creation of the artificial graphene.
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Submitted 26 November, 2014;
originally announced November 2014.
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Temperature Dependence of Conductance and Thermopower Anomalies of Quantum Point Contacts
Authors:
O. A. Tkachenko,
V. A. Tkachenko
Abstract:
It has been shown within the Landauer single-channel approach that the presence of the 0.7 anomaly in the conductance of a ballistic microcontact and the respective plateau in the thermopower implies unusual pinning of the potential barrier height $U$ at a depth of $k_BT$ below the Fermi level $E_F$. A simple way of taking into account the effect of electron-electron interaction on the profile and…
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It has been shown within the Landauer single-channel approach that the presence of the 0.7 anomaly in the conductance of a ballistic microcontact and the respective plateau in the thermopower implies unusual pinning of the potential barrier height $U$ at a depth of $k_BT$ below the Fermi level $E_F$. A simple way of taking into account the effect of electron-electron interaction on the profile and temperature dependence of a smooth one-dimensional potential barrier in the lower spin degeneracy subband of the microcontact has been proposed. The calculated temperature dependences of the conductance and Seebeck coefficient agree with the experimental gate-voltage dependences, including the emergence of anomalous plateaux with an increase in temperature.
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Submitted 16 February, 2013;
originally announced February 2013.
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Boundary-mediated electron-electron interactions in quantum point contacts
Authors:
Vincent Thomas Francois Renard,
O. A. Tkachenko,
V. A. Tkachenko,
T. Ota,
N. Kumada,
J. -C. Portal,
Y. Hirayama
Abstract:
An unusual increase of the conductance with temperature is observed in clean quantum point contacts for conductances larger than 2e^2/h. At the same time a positive magnetoresistance arises at high temperatures. A model accounting for electron-electron interactions mediated by bound- aries (scattering on Friedel oscillations) qualitatively describes the observation. It is supported by numerical…
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An unusual increase of the conductance with temperature is observed in clean quantum point contacts for conductances larger than 2e^2/h. At the same time a positive magnetoresistance arises at high temperatures. A model accounting for electron-electron interactions mediated by bound- aries (scattering on Friedel oscillations) qualitatively describes the observation. It is supported by numerical simulation at zero magnetic field.
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Submitted 7 April, 2008; v1 submitted 25 March, 2008;
originally announced March 2008.
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Quantum corrections to the conductivity and Hall coefficient of a two-dimensional electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: from the diffusive to the ballistic regime
Authors:
V. T. Renard,
I. V. Gornyi,
O. A. Tkachenko,
V. A. Tkachenko,
Z. D. Kvon,
E. B. Olshanetsky,
A. I. Toropov,
J. -C. Portal
Abstract:
We report an experimental study of quantum conductivity corrections in a low mobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5K - 110K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It has been therefore possible to study the crossover between these regimes for both…
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We report an experimental study of quantum conductivity corrections in a low mobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5K - 110K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It has been therefore possible to study the crossover between these regimes for both the longitudinal conductivity and the Hall effect. We perform a parameter free comparison of our experimental data for the longitudinal conductivity at zero magnetic field, the Hall coefficient, and the magnetoresistivity to the recent theories of interaction-induced corrections to the transport coefficients. A quantitative agreement between these theories and our experimental results has been found.
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Submitted 19 May, 2005;
originally announced May 2005.
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Can the conductance of an adiabatic ballistic constriction be lower than $2e^2/h$?
Authors:
C. -T. Liang,
O. A. Tkachenko,
V. A. Tkachenko,
D. G. Baksheyev,
M. Y. Simmons,
D. A. Ritchie,
M. Pepper
Abstract:
We have performed four-terminal conductance measurements of a one-dimensional (1D) channel in which it is possible to modulate the potential profile using three overlaying finger gates. In such a 1D ballistic structure we have observed, {\em for the first time,} that the conductance steps show a gradual decrease from $2e^2/h$ to $0.97 \times 2e^2/h$ with increasing negative finger gate voltage i…
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We have performed four-terminal conductance measurements of a one-dimensional (1D) channel in which it is possible to modulate the potential profile using three overlaying finger gates. In such a 1D ballistic structure we have observed, {\em for the first time,} that the conductance steps show a gradual decrease from $2e^2/h$ to $0.97 \times 2e^2/h$ with increasing negative finger gate voltage in a short, clean 1D constriction. We suggest this phenomenon is due to differing shifts of 1D subbands with changing spilt-gate voltage. Both a simple analytical estimate for an adiabatic constriction and, realistic modeling of the device, give the same magnitude of the conductance decrease as observed in our experiments.
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Submitted 16 March, 2005;
originally announced March 2005.
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Quantum corrections to the conductivity and Hall coefficient of a 2D electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: transition from diffusive to ballistic regime
Authors:
Vincent Thomas Francois Renard,
O. A. Tkachenko,
Ze Don Kvon,
E. B. Olshanetsky,
A. I. Toropov,
J. C Portal
Abstract:
We report an experimental study of the quantum corrections to the longitudinal conductivity and the Hall coefficient of a low mobility, high density two-dimensional two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5 K - 110 K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It was therefore p…
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We report an experimental study of the quantum corrections to the longitudinal conductivity and the Hall coefficient of a low mobility, high density two-dimensional two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5 K - 110 K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It was therefore possible to study the crossover region for the longitudinal conductivity and the Hall effect.
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Submitted 17 December, 2004;
originally announced December 2004.
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Coulomb Charging Effects in an Open Quantum Dot
Authors:
O. A. Tkachenko,
V. A. Tkachenko,
D. G. Baksheyev,
C. -T. Liang,
M. Y. Simmons,
C. G. Smith,
D. A. Ritchie,
Gil-Ho Kim,
M. Pepper
Abstract:
Low-temperature transport properties of a lateral quantum dot formed by overlaying finger gates in a clean one-dimensional channel are investigated. Continuous and periodic oscillations superimposed upon ballistic conductance steps are observed, when the conductance G of the dot changes within a wide range 0<G<6e^2/h. Calculations of the electrostatics confirm that the measured periodic conducta…
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Low-temperature transport properties of a lateral quantum dot formed by overlaying finger gates in a clean one-dimensional channel are investigated. Continuous and periodic oscillations superimposed upon ballistic conductance steps are observed, when the conductance G of the dot changes within a wide range 0<G<6e^2/h. Calculations of the electrostatics confirm that the measured periodic conductance oscillations correspond to successive change of the total charge of the dot by $e$. By modelling the transport it is shown that the progression of the Coulomb oscillations into the region G>2e^2/h may be due to suppression of inter-1D-subband scattering. Fully transmitted subbands contribute to coherent background of conductance, while sequential tunneling via weakly transmitted subbands leads to Coulomb charging of the dot.
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Submitted 2 March, 2000;
originally announced March 2000.
