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Influence of resonant plasmonic nanoparticles on optically accessing the valley degree of freedom in 2D semiconductors
Authors:
Tobias Bucher,
Zlata Fedorova,
Mostafa Abasifard,
Rajeshkumar Mupparapu,
Matthias J. Wurdack,
Emad Najafidehaghani,
Ziyang Gan,
Heiko Knopf,
Antony George,
Falk Eilenberger,
Thomas Pertsch,
Andrey Turchanin,
Isabelle Staude
Abstract:
The valley degree of freedom is one of the most intriguing properties of atomically thin transition metal dichalcogenides. Together with the possibility to address this degree of freedom by valley-contrasting optical selection rules, it has the potential to enable a completely new class of future electronic and optoelectronic devices. Resonant optical nanostructures emerge as promising tools for i…
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The valley degree of freedom is one of the most intriguing properties of atomically thin transition metal dichalcogenides. Together with the possibility to address this degree of freedom by valley-contrasting optical selection rules, it has the potential to enable a completely new class of future electronic and optoelectronic devices. Resonant optical nanostructures emerge as promising tools for interacting with and controlling the valley degree of freedom at the nanoscale. However, a critical understanding gap remains in how nanostructures and their nearfields affect the circular polarization properties of valley-selective emission hindering further developments in this field. In order to address this issue, our study delves into the experimental investigation of a hybrid model system where valley-specific emission from a monolayer of molybdenum disulfide is interacting with a resonant plasmonic nanosphere. Contrary to the simple intuition suggesting that a centrosymmetric nanoresonator preserves the degree of circular polarization in the forward scattered farfield by angular momentum conservation, our cryogenic photoluminescence microscopy reveals that the light emitted from the nanoparticle position is largely unpolarized, i.e. we observe depolarization. We rigorously study the nature of this phenomenon numerically considering the monolayer-nanoparticle interaction at different levels including excitation and emission. In doing so, we find that the farfield degree of polarization strongly reduces in the hybrid system when including excitons emitting from outside of the system's symmetry point, which in combination with depolarisation at the excitation level causes the observed effect. Our results highlight the importance of considering spatially distributed emitters for precise predictions of polarization responses in these hybrid systems.
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Submitted 20 June, 2024; v1 submitted 24 January, 2024;
originally announced January 2024.
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Kapitza-resistance-like exciton dynamics in atomically flat MoSe$_{2}$-WSe$_{2}$ lateral heterojunction
Authors:
Hassan Lamsaadi,
Dorian Beret,
Ioannis Paradisanos,
Pierre Renucci,
Delphine Lagarde,
Xavier Marie,
Bernhard Urbaszek,
Ziyang Gan,
Antony George,
Kenji Watanabe,
Takashi Taniguchi,
Andrey Turchanin,
Laurent Lombez,
Nicolas Combe,
Vincent Paillard,
Jean-Marie Poumirol
Abstract:
Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challe…
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Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile excitons are highly attractive in this regard. However, generating an efficient and controlled exciton transport over long distances is a very challenging task. Here we demonstrate that an atomically sharp TMD-ML lateral heterostructure (MoSe$_{2}$-WSe$_{2}$) transforms the isotropic exciton diffusion into a unidirectional excitonic flow through the junction. Using tip-enhanced photoluminescence spectroscopy (TEPL) and a modified exciton transfer model, we show a discontinuity of the exciton density distribution on each side of the interface. We introduce the concept of exciton Kapitza resistance, by analogy with the interfacial thermal resistance referred to as Kapitza resistance. By comparing different heterostructures with or without top hexagonal boron nitride (hBN) layer, we deduce that the transport properties can be controlled, over distances far greater than the junction width, by the exciton density through near-field engineering and/or laser power density. This work provides a new approach for controlling the neutral exciton flow, which is key toward the conception of excitonic devices.
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Submitted 23 June, 2023;
originally announced June 2023.
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Interface engineering of charge-transfer excitons in 2D lateral heterostructures
Authors:
Roberto Rosati,
Ioannis Paradisanos,
Libai Huang,
Ziyang Gan,
Antony George,
Kenji Watanabe,
Takashi Taniguchi,
Laurent Lombez,
Pierre Renucci,
Andrey Turchanin,
Bernhard Urbaszek,
Ermin Malic
Abstract:
The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be confirmed. Here, we present a microscopic study investigating signatures of bound CT excitons in photoluminescence spectra at the interface of hBN-enca…
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The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be confirmed. Here, we present a microscopic study investigating signatures of bound CT excitons in photoluminescence spectra at the interface of hBN-encapsulated lateral MoSe$_2$-WSe$_2$ heterostructures. Based on a fully microscopic and material-specific theory, we reveal the many-particle processes behind the formation of CT excitons and how they can be tuned via interface- and dielectric engineering. For junction widths smaller than the Coulomb-induced Bohr radius we predict the appearance of a low-energy CT exciton. The theoretical prediction is compared with experimental low-temperature photoluminescence measurements showing emission in the bound CT excitons energy range. Our joint theory-experiment study presents a significant step towards a microscopic understanding of optical properties of technologically promising 2D lateral heterostructures.
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Submitted 6 February, 2023;
originally announced February 2023.
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Gas transport mechanisms through molecularly thin membranes
Authors:
Vladislav Stroganov,
Daniel Hüger,
Christof Neumann,
Tabata Noethel,
Michael Steinert,
Uwe Huebner,
Andrey Turchanin
Abstract:
Atomically thin molecular carbon nanomembranes (CNMs) with intrinsic sub-nanometer porosity are considered as promising candidates for next generation filtration and gas separation applications due to their extremely low thickness, energy efficiency and selectivity. CNMs are intrinsically porous which is advantageous over other 2D materials such as graphene and transition metal dichalcogenides whe…
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Atomically thin molecular carbon nanomembranes (CNMs) with intrinsic sub-nanometer porosity are considered as promising candidates for next generation filtration and gas separation applications due to their extremely low thickness, energy efficiency and selectivity. CNMs are intrinsically porous which is advantageous over other 2D materials such as graphene and transition metal dichalcogenides where defects and pores need to be introduced after synthesis. It was already discovered that water and helium permeate through 4,4-terphenylthiol (TPT) CNM above the limit of detection. Additionally, the permeation of water vapour was nonlinear against its pressure and 1000 stronger than permeation of helium despite their similar kinetic diameters. However, there was no clear permeation mechanism which could explain permeation of both species. Here, we demonstrate that permeation of all gas species is defined by their adsorption. We performed gas permeation measurements through TPT CNM at different temperatures and found that all measured gases experienced an activation energy barrier which correlated with their kinetic diameters. Furthermore, we identified that entropy loss during adsorption and permeation is the fundamental reason of strong nonlinear permeation of water. Our results also demonstrated that adsorption plays a major role in permeation of all gases, not just water.
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Submitted 5 September, 2022;
originally announced September 2022.
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Direct Growth of Monolayer MoS$_2$ on Nanostructured Silicon Waveguides
Authors:
Athira Kuppadakkath,
Emad Najafidehaghani,
Ziyang Gan,
Alessandro Tuniz,
Gia Quyet Ngo,
Heiko Knopf,
Franz J. F. Löchner,
Fatemeh Abtahi,
Tobias Bucher,
Sai Shradha,
Thomas Käsebier,
Stefano Palomba,
Nadja Felde,
Pallabi Paul,
Tobias Ullsperger,
Sven Schröder,
Adriana Szeghalmi,
Thomas Pertsch,
Isabelle Staude,
Uwe Zeitner,
Antony George,
Andrey Turchanin,
Falk Eilenberger
Abstract:
We report for the first time the direct growth of Molybdenum disulfide (MoS$_2$) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photonic devices in a scalable process. Direct growth of 2D material on nanostructures rectifies many drawbacks of the transfer-based approaches. We sho…
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We report for the first time the direct growth of Molybdenum disulfide (MoS$_2$) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photonic devices in a scalable process. Direct growth of 2D material on nanostructures rectifies many drawbacks of the transfer-based approaches. We show that the van der Waals materials grow conformally across the curves, edges, and the silicon-SiO$_2$ interface of the waveguide structure. Here, the waveguide structure used as a growth substrate is complex not just in terms of its geometry but also due to the two materials (Si and SiO$_2$) involved. A transfer-free method like this yields a novel approach for functionalizing nanostructured, integrated optical architectures with an optically active direct semiconductor.
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Submitted 27 May, 2022;
originally announced June 2022.
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Tuning nanowire lasers via hybridization with two-dimensional materials
Authors:
Edwin Eobaldt,
Francesco Vitale,
Maximilian Zapf,
Margarita Lapteva,
Tarlan Hamzayev,
Ziyang Gan,
Emad Najafidehaghani,
Christof Neumann,
Antony George,
Andrey Turchanin,
Giancarlo Soavi,
Carsten Ronning
Abstract:
Mixed dimensional hybrid structures have recently gained increasing attention as promising building blocks for novel electronic and optoelectronic devices. In this context, hybridization of semiconductor nanowires with two-dimensional materials could offer new ways to control and modulate lasing at the nanoscale. In this work, we deterministically fabricate hybrid mixed-dimensional heterostructure…
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Mixed dimensional hybrid structures have recently gained increasing attention as promising building blocks for novel electronic and optoelectronic devices. In this context, hybridization of semiconductor nanowires with two-dimensional materials could offer new ways to control and modulate lasing at the nanoscale. In this work, we deterministically fabricate hybrid mixed-dimensional heterostructures composed of ZnO nanowires and MoS2 monolayers with micrometer control over their relative position. First, we show that our deterministic fabrication method does not degrade the optical properties of the ZnO nanowires. Second, we demonstrate that the lasing wavelength of ZnO nanowires can be tuned by several nanometers by hybridization with CVD-grown MoS2 monolayers. We assign this spectral shift of the lasing modes to an efficient carrier transfer at the heterointerface and the subsequent increase of the optical band gap in ZnO (Moss-Burstein effect).
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Submitted 26 May, 2022;
originally announced May 2022.
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One pot chemical vapor deposition of high optical quality large area monolayer Janus transition metal dichalcogenides
Authors:
Ziyang Gan,
Ioannis Paradisanos,
Ana Estrada-Real,
Julian Picker,
Emad Najafidehaghani,
Francis Davies,
Christof Neumann,
Cedric Robert,
Peter Wiecha,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Arkady V. Krasheninnikov,
Bernhard Urbaszek,
Antony George,
Andrey Turchanin
Abstract:
We report one-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these two-dimensional semiconductor monolayers takes place upon the thermodynamic equilibrium-driven exchange of the bottom Se atoms of the initially grown MoSe2 s…
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We report one-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these two-dimensional semiconductor monolayers takes place upon the thermodynamic equilibrium-driven exchange of the bottom Se atoms of the initially grown MoSe2 single crystals on gold foils with S atoms. The growth process is characterized by complementary experimental techniques including Raman and X-ray photoelectron spectroscopy and the growth mechanisms are rationalized by first principle calculations. The remarkably high optical quality of the synthesized Janus monolayers is demonstrated by optical and magneto-optical measurements which reveal the strong exciton-phonon coupling and enable to obtain the exciton g-factor of -3.3.
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Submitted 10 May, 2022;
originally announced May 2022.
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Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride
Authors:
Dorian Beret,
Ioannis Paradisanos,
Ziyang Gan,
Emad Naja dehaghani,
Antony George,
Tibor Lehnert,
Johannes Biskupek,
Shivangi Shree,
Ana Estrada-Real,
Delphine Lagarde,
Jean-Marie Poumirol,
Vincent Paillard,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Ute Kaiser,
Pierre Renucci,
Laurent Lombez,
Andrey Turchanin,
Bernhard Urbaszek
Abstract:
Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostruc…
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Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy at T = 4 K and also at 300 K to access the optical transitions in CVD grown MoSe2-WSe2 lateral heterostructures that are transferred from the growth-substrate and are encapsulated in hBN. Photoluminescence (PL), reflectance contrast and Raman spectroscopy reveal considerably narrowed optical transition linewidth similar to high quality exfoliated monolayers. In high-resolution transmission electron microscopy (HRTEM) we find near-atomically sharp junctions with a typical extent of 3nm for the covalently bonded MoSe2-WSe2. In PL imaging experiments we find effective excitonic diffusion length that are longer for WSe2 than for MoSe2 at low T=4 K, whereas at 300 K this trend is reversed.
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Submitted 15 April, 2022;
originally announced April 2022.
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Signatures of multi-band effects in high-harmonic generation in monolayer MoS$_2$
Authors:
Lun Yue,
Richard Hollinger,
Can B. Uzundal,
Bailey Nebgen,
Ziyang Gan,
Emad Najafidehaghani,
Antony George,
Christian Spielmann,
Daniil Kartashov,
Andrey Turchanin,
Diana Y. Qiu,
Mette B. Gaarde,
Michael Zuerch
Abstract:
High-harmonic generation (HHG) in solids has been touted as a way to probe ultrafast dynamics and crystal symmetries in condensed matter systems. Here, we investigate the polarization properties of high-order harmonics generated in monolayer MoS$_2$, as a function of crystal orientation relative to the mid-infrared laser field polarization. At several different laser wavelengths we experimentally…
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High-harmonic generation (HHG) in solids has been touted as a way to probe ultrafast dynamics and crystal symmetries in condensed matter systems. Here, we investigate the polarization properties of high-order harmonics generated in monolayer MoS$_2$, as a function of crystal orientation relative to the mid-infrared laser field polarization. At several different laser wavelengths we experimentally observe a prominent angular shift of the parallel-polarized odd harmonics for energies above approximately 3.5 eV, and our calculations indicate that this shift originates in subtle differences in the recombination dipole strengths involving multiple conduction bands. This observation is material specific and is in addition to the angular dependence imposed by the dynamical symmetry properties of the crystal interacting with the laser field, and may pave the way for probing the vectorial character of multi-band recombination dipoles.
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Submitted 15 February, 2022; v1 submitted 24 December, 2021;
originally announced December 2021.
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All-optical polarization and amplitude modulation of second-harmonic generation in atomically thin semiconductors
Authors:
Sebastian Klimmer,
Omid Ghaebi,
Ziyang Gan,
Antony George,
Andrey Turchanin,
Giulio Cerullo,
Giancarlo Soavi
Abstract:
Second-harmonic generation is of paramount importance in several fields of science and technology, including frequency conversion, self-referencing of frequency combs, nonlinear spectroscopy and pulse characterization. Advanced functionalities are enabled by modulation of the harmonic generation efficiency, which can be achieved with electrical or all-optical triggers. Electrical control of the ha…
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Second-harmonic generation is of paramount importance in several fields of science and technology, including frequency conversion, self-referencing of frequency combs, nonlinear spectroscopy and pulse characterization. Advanced functionalities are enabled by modulation of the harmonic generation efficiency, which can be achieved with electrical or all-optical triggers. Electrical control of the harmonic generation efficiency offers large modulation depth at the cost of low switching speed, by contrast to all-optical nonlinear devices, which provide high speed and low modulation depth. Here we demonstrate all-optical modulation of second-harmonic generation in MoS2 with a modulation depth of close to 100% and speed limited only by the fundamental pulse duration. This result arises from a combination of D3h crystal symmetry and the deep subwavelength thickness of the sample, it can therefore be extended to the whole family of transition metal dichalcogenides to provide great flexibility in the design of advanced nonlinear optical devices such as high-speed integrated frequency converters, broadband autocorrelators for ultrashort pulse characterization, and tunable nanoscale holograms.
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Submitted 28 October, 2021;
originally announced October 2021.
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Tuning exciton recombination rates in doped transition metaldichalcogenides
Authors:
Theresa Kuechle,
Sebastian Klimmer,
Margarita Lapteva,
Tarlan Hamzayev,
Antony George,
Andrey Turchanin,
Torsten Fritz,
Carsten Ronning,
Marco Gruenewald,
Giancarlo Soavi
Abstract:
Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors that hold great promise for advanced applications in photonics and optoelectronics. Understanding the interplay between their radiative and non-radiative recombination pathways is thus of crucial importance not only for fundamental studies but also for the design of future nanoscale on-chip devices. Here, we investigat…
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Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors that hold great promise for advanced applications in photonics and optoelectronics. Understanding the interplay between their radiative and non-radiative recombination pathways is thus of crucial importance not only for fundamental studies but also for the design of future nanoscale on-chip devices. Here, we investigate the interplay between doping and exciton-exciton annihilation (EEA) and their impact on the photoluminescence quantum yield in different TMD samples and related heterostructures. We demonstrate that the EEA threshold increases in highly doped samples, where the radiative and non-radiative recombination of trions dominates.
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Submitted 26 October, 2021;
originally announced October 2021.
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In-fiber second-harmonic generation with embedded two-dimensional materials
Authors:
Gia Quyet Ngo,
Emad Najafidehaghani,
Ziyang Gan,
Sara Khazaee,
Antony George,
Erik P. Schartner,
Heike Ebendorff-Heidepriem,
Thomas Pertsch,
Alessandro Tuniz,
Markus A. Schmidt,
Ulf Peschel,
Andrey Turchanin,
Falk Eilenberger
Abstract:
Silica-based optical fibers are a workhorse of nonlinear optics. They have been used to demonstrate nonlinear phenomena such as solitons and self-phase modulation. Since the introduction of the photonic crystal fiber, they have found many exciting applications, such as supercontinuum white light sources and third-harmonic generation, among others. They stand out by their low loss, large interactio…
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Silica-based optical fibers are a workhorse of nonlinear optics. They have been used to demonstrate nonlinear phenomena such as solitons and self-phase modulation. Since the introduction of the photonic crystal fiber, they have found many exciting applications, such as supercontinuum white light sources and third-harmonic generation, among others. They stand out by their low loss, large interaction length, and the ability to engineer its dispersive properties, which compensate for the small chi(3) nonlinear coefficient. However, they have one fundamental limitation: due to the amorphous nature of silica, they do not exhibit second-order nonlinearity, except for minor contributions from surfaces. Here, we demonstrate significant second-harmonic generation in functionalized optical fibers with a monolayer of highly nonlinear MoS2 deposited on the fiber guiding core. The demonstration is carried out in a 3.5 mm short piece of exposed core fiber, which was functionalized in a scalable process CVD-based process, without a manual transfer step. This approach is scalable and can be generalized to other transition metal dichalcogenides and other waveguide systems. We achieve an enhancement of more than 1000x over a reference sample of equal length. Our simple proof-of-principle demonstration does not rely on either phase matching to fundamental modes, or ordered growth of monolayer crystals, suggesting that pathways for further improvement are within reach. Our results do not just demonstrate a new path towards efficient in-fiber SHG-sources, instead, they establish a platform with a new route to chi(2)-based nonlinear fiber optics, optoelectronics, and photonics platforms, integrated optical architectures, and active fiber networks.
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Submitted 11 August, 2021;
originally announced August 2021.
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Giant persistent photoconductivity in monolayer MoS2 field-effect transistors
Authors:
A. George,
M. V. Fistul,
M. Gruenewald,
D. Kaiser,
T. Lehnert,
R. Mupparapu,
C. Neumann,
U. Hübner,
M. Schaal,
N. Masurkar,
A. L. M. Reddy,
I. Staude,
U. Kaiser,
T. Fritz,
A. Turchanin
Abstract:
Monolayer transition metal dichalcogenides (TMD) have numerous potential applications in ultrathin electronics and photonics. The exposure of TMD based devices to light generates photo-carriers resulting in an enhanced conductivity, which can be effectively used, e.g., in photodetectors. If the photo-enhanced conductivity persists after removal of the irradiation, the effect is known as persistent…
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Monolayer transition metal dichalcogenides (TMD) have numerous potential applications in ultrathin electronics and photonics. The exposure of TMD based devices to light generates photo-carriers resulting in an enhanced conductivity, which can be effectively used, e.g., in photodetectors. If the photo-enhanced conductivity persists after removal of the irradiation, the effect is known as persistent photoconductivity (PPC). Here we show that ultraviolet light (wavelength = 365 nm) exposure induces an extremely long-living giant PPC (GPPC) in monolayer MoS2 (ML-MoS2) field-effect transistors (FET) with a time constant of ~30 days. Furthermore, this effect leads to a large enhancement of the conductivity up to a factor of 107. In contrast to previous studies in which the origin of the PPC was attributed to extrinsic reasons such as trapped charges in the substrate or adsorbates, we unambiguously show that the GPPC arises mainly from the intrinsic properties of ML-MoS2 such as lattice defects that induce a large amount of localized states in the forbidden gap. This finding is supported by a detailed experimental and theoretical study of the electric transport in TMD based FETs as well as by characterization of ML-MoS2 with scanning tunneling spectroscopy, high-resolution transmission electron microscopy, and photoluminescence measurements. The obtained results provide a basis towards the defect-based engineering of the electronic and optical properties of TMDs for device applications.
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Submitted 7 December, 2020;
originally announced December 2020.
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Proton and Li-Ion Permeation through Graphene with Eight-Atom-Ring Defects
Authors:
Eoin Griffin,
Lucas Mogg,
Guang-Ping Hao,
Gopinadhan Kalon,
Cihan Bacaksiz,
Guillermo Lopez-Polin,
T. Y. Zhou,
Victor Guarochico,
Junhao Cai,
Christof Neumann,
Andreas Winter,
Michael Mohn,
Jong Hak Lee,
Junhao Lin,
Ute Kaiser,
Irina V. Grigorieva,
Kazu Suenaga,
Barbaros Ozyilmaz,
Hui-Min Cheng,
Wencai Ren,
Andrey Turchanin,
Francois M. Peeters,
Andre K. Geim,
Marcelo Lozada-Hidalgo
Abstract:
Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experi…
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Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experiment. Here we show that atomically thin carbon films with a high density of atomic-scale defects continue blocking all molecular transport, but their proton permeability becomes ~1,000 times higher than that of defect-free graphene. Lithium ions can also permeate through such disordered graphene. The enhanced proton and ion permeability is attributed to a high density of 8-carbon-atom rings. The latter pose approximately twice lower energy barriers for incoming protons compared to the 6-atom rings of graphene and a relatively low barrier of ~0.6 eV for Li ions. Our findings suggest that disordered graphene could be of interest as membranes and protective barriers in various Li-ion and hydrogen technologies.
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Submitted 20 May, 2020; v1 submitted 19 May, 2020;
originally announced May 2020.
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Scalable functionalization of optical fibers using atomically thin semiconductors
Authors:
Gia Quyet Ngo,
Antony George,
Robin Tristan Klaus Schock,
Alessandro Tuniz,
Emad Najafidehaghani,
Ziyang Gan,
Nils C. Geib,
Tobias Bucher,
Heiko Knopf,
Christof Neumann,
Tilman Lühder,
Stephen Warren-Smith,
Heike Ebendorff-Heidepriem,
Thomas Pertsch,
Markus A. Schmidt,
Andrey Turchanin,
Falk Eilenberger
Abstract:
Atomically thin transition metal dichalcogenides are highly promising for integrated optoelectronic and photonic systems due to their exciton-driven linear and nonlinear interaction with light. Integrating them into optical fibers yields novel opportunities in optical communication, remote sensing, and all-fiber optoelectronics. However, scalable and reproducible deposition of high quality monolay…
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Atomically thin transition metal dichalcogenides are highly promising for integrated optoelectronic and photonic systems due to their exciton-driven linear and nonlinear interaction with light. Integrating them into optical fibers yields novel opportunities in optical communication, remote sensing, and all-fiber optoelectronics. However, scalable and reproducible deposition of high quality monolayers on optical fibers is a challenge. Here, we report the chemical vapor deposition of monolayer MoS2 and WS2 crystals on the core of microstructured exposed core optical fibers and their interaction with the fibers' guided modes. We demonstrate two distinct application possibilities of 2D-functionalized waveguides to exemplify their potential. First, we simultaneously excite and collect excitonic 2D material photoluminescence with the fiber modes, opening a novel route to remote sensing. Then we show that third harmonic generation is modified by the highly localized nonlinear polarization of the monolayers, yielding a new avenue to tailor nonlinear optical processes in fibers. We anticipate that our results may lead to significant advances in optical fiber based technologies.
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Submitted 2 September, 2020; v1 submitted 8 May, 2020;
originally announced May 2020.
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Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition
Authors:
Ioannis Paradisanos,
Shivangi Shree,
Antony George,
Nadine Leisgang,
Cedric Robert,
Kenji Watanabe,
Takashi Taniguchi,
Richard J. Warburton,
Andrey Turchanin,
Xavier Marie,
Iann C. Gerber,
Bernhard Urbaszek
Abstract:
Combining MoS$_2$ monolayers to form multilayers allows to access new functionalities. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in MoS$_2$ homobilayer samples grown by chemical vapor deposition (CVD) and artificially stacked bilayers from CVD monolayers. We show that hole delocalization over the bilayer is allowed in 2H stack…
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Combining MoS$_2$ monolayers to form multilayers allows to access new functionalities. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in MoS$_2$ homobilayer samples grown by chemical vapor deposition (CVD) and artificially stacked bilayers from CVD monolayers. We show that hole delocalization over the bilayer is allowed in 2H stacking and results in strong interlayer exciton absorption and also in a larger A-B exciton separation as compared to 3R bilayers, where both holes and electrons are confined to the individual layers. Comparing 2H and 3R reflectivity spectra allows to extract an interlayer coupling energy of about $t_\perp=49$ meV. Obtaining very similar results for as-grown and artificially stacked bilayers is promising for assembling large area van der Waals structures with CVD material, using interlayer exciton absorption and A-B exciton separation as indicators for interlayer coupling. Beyond DFT calculations including excitonic effects confirm signatures of efficient interlayer coupling for 2H stacking in agreement with our experiments.
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Submitted 24 January, 2020;
originally announced January 2020.
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Accessing high optical quality of MoS2 monolayers grown by chemical vapor deposition
Authors:
Shivangi Shree,
Antony George,
Tibor Lehnert,
Christof Neumann,
Meryem Benelajla,
Cedric Robert,
Xavier Marie,
Kenji Watanabe,
Takashi Taniguchi,
Ute Kaiser,
Bernhard Urbaszek,
Andrey Turchanin
Abstract:
Chemical vapor deposition (CVD) allows growing transition metal dichalcogenides (TMDs) over large surface areas on inexpensive substrates. In this work, we correlate the structural quality of CVD grown MoS$_2$ monolayers (MLs) on SiO$_2$/Si wafers studied by high-resolution transmission electron microscopy (HRTEM) with high optical quality revealed in optical emission and absorption from cryogenic…
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Chemical vapor deposition (CVD) allows growing transition metal dichalcogenides (TMDs) over large surface areas on inexpensive substrates. In this work, we correlate the structural quality of CVD grown MoS$_2$ monolayers (MLs) on SiO$_2$/Si wafers studied by high-resolution transmission electron microscopy (HRTEM) with high optical quality revealed in optical emission and absorption from cryogenic to ambient temperatures. We determine a defect concentration of the order of 10$^{13}$ cm$^{-2}$ for our samples with HRTEM. To have access to the intrinsic optical quality of the MLs, we remove the MLs from the SiO$_2$ growth substrate and encapsulate them in hBN flakes with low defect density, to reduce the detrimental impact of dielectric disorder. We show optical transition linewidth of 5 meV at low temperature (T=4 K) for the free excitons in emission and absorption. This is comparable to the best ML samples obtained by mechanical exfoliation of bulk material. The CVD grown MoS$_2$ ML photoluminescence is dominated by free excitons and not defects even at low temperature. High optical quality of the samples is further confirmed by the observation of excited exciton states of the Rydberg series. We optically generate valley coherence and valley polarization in our CVD grown MoS$_2$ layers, showing the possibility for studying spin and valley physics in CVD samples of large surface area.
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Submitted 7 July, 2019;
originally announced July 2019.
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Large-area fabrication of low- and high-spatial-frequency laser-induced periodic surface structures on carbon fibers
Authors:
Clemens Kunz,
Tobias N. Büttner,
Björn Naumann,
Anne V. Boehm,
Enrico Gnecco,
Jörn Bonse,
Christof Neumann,
Andrey Turchanin,
Frank A. Müller,
Stephan Gräf
Abstract:
The formation and properties of laser-induced periodic surface structures (LIPSS) were investigated on carbon fibers under irradiation of fs-laser pulses characterized by a pulse duration $τ$ = 300 fs and a laser wavelength $λ$ = 1025 nm. The LIPSS were fabricated in an air environment at normal incidence with different values of the laser peak fluence and number of pulses per spot. The morphology…
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The formation and properties of laser-induced periodic surface structures (LIPSS) were investigated on carbon fibers under irradiation of fs-laser pulses characterized by a pulse duration $τ$ = 300 fs and a laser wavelength $λ$ = 1025 nm. The LIPSS were fabricated in an air environment at normal incidence with different values of the laser peak fluence and number of pulses per spot. The morphology of the generated structures was characterized by using scanning electron microscopy, atomic force microscopy and Fast-Fourier transform analyses. Moreover, the material structure and the surface chemistry of the carbon fibers before and after laser irradiation was analyzed by micro Raman spectroscopy and X-ray photoelectron spectroscopy. Large areas in the cm$^{2}$ range of carbon fiber arrangements were successfully processed with homogenously distributed high- and low-spatial frequency LIPSS. Beyond those distinct nanostructures, hybrid structures were realized for the very first time by a superposition of both types of LIPSS in a two-step process. The findings facilitate the fabrication of tailored LIPSS-based surface structures on carbon fibers that could be of particular interest for e.g. fiber reinforced polymers and concretes.
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Submitted 4 May, 2018;
originally announced May 2018.
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Lateral heterostructures of two-dimensional materials by electron-beam induced stitching
Authors:
Andreas Winter,
Antony George,
Christof Neumann,
Zian Tang,
Michael J. Mohn,
Johannes Biskupek,
Nirul Masurkar,
Leela Mohana Reddy Arava,
Thomas Weimann,
Uwe Hübner,
Ute Kaiser,
Andrey Turchanin
Abstract:
We present a novel methodology to synthesize two-dimensional (2D) lateral heterostructures of graphene and MoS2 sheets with molecular carbon nanomembranes (CNMs), which is based on electron beam induced stitching. Monolayers of graphene and MoS2 were grown by chemical vapor deposition (CVD) on copper and SiO2 substrates, respectively, transferred onto gold/mica substrates and patterned by electron…
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We present a novel methodology to synthesize two-dimensional (2D) lateral heterostructures of graphene and MoS2 sheets with molecular carbon nanomembranes (CNMs), which is based on electron beam induced stitching. Monolayers of graphene and MoS2 were grown by chemical vapor deposition (CVD) on copper and SiO2 substrates, respectively, transferred onto gold/mica substrates and patterned by electron beam lithography or photolithography. Self-assembled monolayers (SAMs) of aromatic thiols were grown on the gold film in the areas where the 2D materials were not present. An irradiation with a low energy electron beam was employed to convert the SAMs into CNMs and simultaneously stitching the CNM edges to the edges of graphene and MoS2, therewith forming a heterogeneous but continuous film composed of two different materials. The formed lateral heterostructures possess a high mechanical stability, enabling their transfer from the gold substrate onto target substrates and even the preparation as freestanding sheets. We characterized the individual steps of this synthesis and the structure of the final heterostructures by complementary analytical techniques including optical microscopy, Raman spectroscopy, atomic force microscopy (AFM), helium ion microscopy (HIM), X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) and find that they possess nearly atomically sharp boundaries.
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Submitted 1 May, 2018;
originally announced May 2018.
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An atomically thin matter-wave beamsplitter
Authors:
Christian Brand,
Michele Sclafani,
Christian Knobloch,
Yigal Lilach,
Thomas Juffmann,
Jani Kotakoski,
Clemens Magler,
Andreas Winter,
Andrey Turchanin,
Jannik Meyer,
Ori Cheshnovsky,
Markus Arndt
Abstract:
Matter-wave interferometry has become an essential tool in studies on the foundations of quantum physics and for precision measurements. Mechanical gratings have played an important role as coherent beamsplitters for atoms, molecules and clusters since the basic diffraction mechanism is the same for all particles. However, polarizable objects may experience van der Waals shifts when they pass the…
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Matter-wave interferometry has become an essential tool in studies on the foundations of quantum physics and for precision measurements. Mechanical gratings have played an important role as coherent beamsplitters for atoms, molecules and clusters since the basic diffraction mechanism is the same for all particles. However, polarizable objects may experience van der Waals shifts when they pass the grating walls and the undesired dephasing may prevent interferometry with massive objects. Here we explore how to minimize this perturbation by reducing the thickness of the diffraction mask to its ultimate physical limit, i.e. the thickness of a single atom. We have fabricated diffraction masks in single-layer and bilayer graphene as well as in 1 nm thin carbonaceous biphenyl membrane. We identify conditions to transform an array of single layer graphene nanoribbons into a grating of carbon nanoscrolls. We show that all these ultra-thin nanomasks can be used for high-contrast quantum diffraction of massive molecules. They can be seen as a nanomechanical answer to the question debated by Bohr and Einstein whether a softly suspended double slit would destroy quantum interference. In agreement with Bohr's reasoning we show that quantum coherence prevails even in the limit of atomically thin gratings.
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Submitted 24 February, 2016;
originally announced February 2016.
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Nanostructuring Graphene by Dense Electronic Excitation
Authors:
O. Ochedowski,
O. Lehtinen,
U. Kaiser,
A. Turchanin,
B. Ban-d'Etat,
H. Lebius,
M. Karlusic,
M. Jaksic,
M. Schleberger
Abstract:
The ability to manufacture tailored graphene nanostructures is a key factor to fully exploit its enormous technological potential. We have investigated nanostructures created in graphene by swift heavy ion induced folding. For our experiments, single layers of graphene exfoliated on various substrates and freestanding graphene have been irradiated and analyzed by atomic force and high resolution t…
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The ability to manufacture tailored graphene nanostructures is a key factor to fully exploit its enormous technological potential. We have investigated nanostructures created in graphene by swift heavy ion induced folding. For our experiments, single layers of graphene exfoliated on various substrates and freestanding graphene have been irradiated and analyzed by atomic force and high resolution transmission electron microscopy as well as Raman spectroscopy. We show that the dense electronic excitation in the wake of the traversing ion yields characteristic nanostructures each of which may be fabricated by choosing the proper irradiation conditions. These nanostructures include unique morphologies such as closed bilayer edges with a given chirality or nanopores within supported as well as freestanding graphene. The length and orientation of the nanopore, and thus of the associated closed bilayer edge, may be simply controlled by the direction of the incoming ion beam. In freestanding graphene, swift heavy ion irradiation induces extremely small openings, offering the possibility to perforate graphene membranes in a controlled way.
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Submitted 10 September, 2015;
originally announced September 2015.
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All-carbon vertical van der Waals heterostructures: Non-destructive functionalization of graphene for electronic applications
Authors:
Miroslaw Woszczyna,
Andreas Winter,
Miriam Grothe,
Annika Willunat,
Stefan Wundrack,
Rainer Stosch,
Thomas Weimann,
Franz Ahlers,
Andrey Turchanin
Abstract:
We present a route to non-destructive functionalization of graphene via assembly of vertical all-carbon van der Waals heterostructures. To this end, we employ singlelayer graphene (SLG) sheets grown by low-pressure methane CVD on Cu foils and large-area dielectric ~1 nm thick amino-terminated carbon nanomembranes (NH2-CNMs) generated by electron-beam-induced crosslinking of aromatic self-assembled…
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We present a route to non-destructive functionalization of graphene via assembly of vertical all-carbon van der Waals heterostructures. To this end, we employ singlelayer graphene (SLG) sheets grown by low-pressure methane CVD on Cu foils and large-area dielectric ~1 nm thick amino-terminated carbon nanomembranes (NH2-CNMs) generated by electron-beam-induced crosslinking of aromatic self-assembled monolayers. We encapsulate SLG sheets on oxidized silicon wafers with NH2-CNMs via mechanical stacking and characterize structural, chemical and electronic properties of the formed heterostructures by Raman spectroscopy and X-ray photoelectron spectroscopy as well as by electric and electromagnetic transport measurements. We show that functional amino groups are brought in close vicinity of the SLG sheets and that their transport characteristics are not impaired by this functionalization; moreover, we demonstrate a functional response of the heterostructure devices to the protonation of the amino groups in water. Due to its relative simplicity, the suggested approach opens broad avenues for implementations in graphene-based electronic devices where non-destructive chemical functionalization of graphene is required (e.g., for engineering electrical transducers for chemical and bio-sensing) or as complementary dielectric to graphene in hieratical heterostructures.
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Submitted 8 June, 2014;
originally announced June 2014.
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Functional single-layer graphene sheets from aromatic monolayers
Authors:
Dan G. Matei,
Nils-Eike Weber,
Simon Kurasch,
Stefan Wundrack,
Miroslaw Woszczyna,
Miriam Grothe,
Thomas Weimann,
Franz Ahlers,
Rainer Stosch,
Ute Kaiser,
Andrey Turchanin
Abstract:
We demonstrate how self-assembled monolayers of aromatic molecules on copper substrates can be converted into high-quality single-layer graphene using low-energy electron irradiation and subsequent annealing. We characterize this two-dimensional solid state transformation on the atomic scale and study the physical and chemical properties of the formed graphene sheets by complementary microscopic a…
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We demonstrate how self-assembled monolayers of aromatic molecules on copper substrates can be converted into high-quality single-layer graphene using low-energy electron irradiation and subsequent annealing. We characterize this two-dimensional solid state transformation on the atomic scale and study the physical and chemical properties of the formed graphene sheets by complementary microscopic and spectroscopic techniques and by electrical transport measurements. As substrates we successfully use Cu(111) single crystals and the technologically relevant polycrystalline copper foils.
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Submitted 8 June, 2014;
originally announced June 2014.
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Energy-filtered transmission electron microscopy of biological samples on highly transparent carbon nanomembranes
Authors:
Daniel Rhinow,
Matthias Büenfeld,
Nils-Eike Weber,
André Beyer,
Armin Gölzhäuser,
Werner Kühlbrandt,
Norbert Hampp,
Andrey Turchanin
Abstract:
Ultrathin carbon nanomembranes (CNM) comprising crosslinked biphenyl precursors have been tested as support films for energy-filtered transmission electron microscopy (EFTEM) of biological specimens. Due to their high transparency CNM are ideal substrates for electron energy loss spectroscopy (EELS) and electron spectroscopic imaging (ESI) of stained and unstained biological samples. Virtually bac…
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Ultrathin carbon nanomembranes (CNM) comprising crosslinked biphenyl precursors have been tested as support films for energy-filtered transmission electron microscopy (EFTEM) of biological specimens. Due to their high transparency CNM are ideal substrates for electron energy loss spectroscopy (EELS) and electron spectroscopic imaging (ESI) of stained and unstained biological samples. Virtually background-free elemental maps of tobacco mosaic virus (TMV) and ferritin have been obtained from samples supported by ~ 1 nm thin CNM. Furthermore, we have tested conductive carbon nanomembranes (cCNM) comprising nanocrystalline graphene, obtained by thermal treatment of CNM, as supports for cryoEM of ice-embedded biological samples. We imaged ice-embedded TMV on cCNM and compared the results with images of ice-embedded TMV on conventional carbon film (CC), thus analyzing the gain in contrast for TMV on cCNM in a quantitative manner. In addition we have developed a method for the preparation of vitrified specimens, suspended over the holes of a conventional holey carbon film, while backed by ultrathin cCNM.
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Submitted 6 October, 2011;
originally announced October 2011.
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Single-walled carbon nanotubes and nanocrystalline graphene reduce beam-induced movements in high-resolution electron cryo-microscopy of ice-embedded biological samples
Authors:
Daniel Rhinow,
Nils-Eike Weber,
Andrey Turchanin,
Armin Gölzhäuser,
Werner Kühlbrandt
Abstract:
For single particle electron cryo-microscopy (cryoEM), contrast loss due to beam-induced charging and specimen movement is a serious problem, as the thin films of vitreous ice spanning the holes of a holey carbon film are particularly susceptible to beam-induced movement. We demonstrate that the problem is at least partially solved by carbon nanotechnology. Doping ice-embedded samples with single-…
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For single particle electron cryo-microscopy (cryoEM), contrast loss due to beam-induced charging and specimen movement is a serious problem, as the thin films of vitreous ice spanning the holes of a holey carbon film are particularly susceptible to beam-induced movement. We demonstrate that the problem is at least partially solved by carbon nanotechnology. Doping ice-embedded samples with single-walled carbon nanotubes (SWNT) in aqueous suspension or adding nanocrystalline graphene supports, obtained by thermal conversion of cross-linked self-assembled biphenyl precursors, significantly reduces contrast loss in high-resolution cryoEM due to the excellent electrical and mechanical properties of SWNTs and graphene.
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Submitted 6 October, 2011;
originally announced October 2011.
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Conversion of self-assembled monolayers into nanocrystalline graphene: Structure and electric transport
Authors:
Andrey Turchanin,
Dirk Weber,
Matthias Buenfeld,
Christian Kisielowski,
Mikhail V. Fistul,
Konstantin B. Efetov,
Thomas Weimann,
Rainer Stosch,
Joachim Mayer,
Armin Golzhauser
Abstract:
Graphene-based materials have been suggested for applications ranging from nanoelectronics to nanobiotechnology. However, the realization of graphene-based technologies will require large quantities of free-standing two-dimensional (2D) carbon materials with tuneable physical and chemical properties. Bottom-up approaches via molecular self-assembly have great potential to fulfil this demand. Here,…
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Graphene-based materials have been suggested for applications ranging from nanoelectronics to nanobiotechnology. However, the realization of graphene-based technologies will require large quantities of free-standing two-dimensional (2D) carbon materials with tuneable physical and chemical properties. Bottom-up approaches via molecular self-assembly have great potential to fulfil this demand. Here, we report on the fabrication and characterization of graphene made by electron-radiation induced cross-linking of aromatic self-assembled monolayers (SAMs) and their subsequent annealing. In this process, the SAM is converted into a nanocrystalline graphene sheet with well defined thickness and arbitrary dimensions. Electric transport data demonstrate that this transformation is accompanied by an insulator to metal transition that can be utilized to control electrical properties such as conductivity, electron mobility and ambipolar electric field effect of the fabricated graphene sheets. The suggested route opens broad prospects towards the engineering of free-standing 2D carbon materials with tuneable properties on various solid substrates and on holey substrates as suspended membranes.
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Submitted 29 May, 2011;
originally announced May 2011.
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Mechanically stacked 1 nm thick carbon nanosheets: Ultrathin layered materials with tunable optical, chemical and electrical properties
Authors:
Christoph T. Nottbohm,
Andrey Turchanin,
Andre Beyer,
Rainer Stosch,
Armin Golzhauser
Abstract:
Carbon nanosheets are mechanically stable free-standing two-dimensional materials with a thickness of ~1 nm and well defined physical and chemical properties. They are made by radiation induced cross-linking of aromatic self-assembled monolayers. Here we present a route to the scalable fabrication of multilayer nanosheets with tunable electrical, optical and chemical properties on insulating subst…
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Carbon nanosheets are mechanically stable free-standing two-dimensional materials with a thickness of ~1 nm and well defined physical and chemical properties. They are made by radiation induced cross-linking of aromatic self-assembled monolayers. Here we present a route to the scalable fabrication of multilayer nanosheets with tunable electrical, optical and chemical properties on insulating substrates. Stacks up to five nanosheets with sizes of ~1 cm^2 on oxidized silicon were studied. Their optical characteristics were investigated by visual inspection, optical microscopy, UV/Vis reflection spectroscopy and model calculations. Their chemical composition was studied by X-ray photoelectron spectroscopy. The multilayer samples were then annealed in ultra high vacuum at various temperatures up to 1100 K. A subsequent investigation by Raman, X-ray photoelectron and UV/Vis reflection spectroscopy as well as by electrical four-point probe measurements demonstrates that the layered nanosheets transform into nanocrystalline graphene. This structural and chemical transformation is accompanied by changes in the optical properties and electrical conductivity and opens up a new path for the fabrication of ultrathin functional conductive coatings.
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Submitted 29 May, 2011;
originally announced May 2011.
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One nanometer thin carbon nanosheets with tunable conductivity and stiffness
Authors:
Andrey Turchanin,
Andre Beyer,
Christoph Nottbohm,
Xianghui Zhang,
Rainer Stosch,
Alla Sologubenko,
Joachim Mayer,
Peter Hinze,
Thomas Weimann,
Armin Golzhauser
Abstract:
We present a new route for the fabrication of ultrathin (~1 nm) carbon films and membranes, whose electrical behavior can be tuned from insulating to conducting. Self-assembled monolayers of biphenyls are cross-linked by electrons, detached from the surfaces and subsequently pyrolized. Above 1000K, the cross-linked aromatic monolayer forms a mechanically stable graphitic phase. The transition is a…
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We present a new route for the fabrication of ultrathin (~1 nm) carbon films and membranes, whose electrical behavior can be tuned from insulating to conducting. Self-assembled monolayers of biphenyls are cross-linked by electrons, detached from the surfaces and subsequently pyrolized. Above 1000K, the cross-linked aromatic monolayer forms a mechanically stable graphitic phase. The transition is accompanied by a drop of the sheet resistivity from ~10^8 to ~10^2 kOhm/sq and a mechanical stiffening of the nanomembranes from ~10 to ~50 GPa. The technical applicability of the nanosheets is demonstrated by incorporating them into a microscopic pressure sensor
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Submitted 29 May, 2011;
originally announced May 2011.