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Identifying band structure changes of FePS3 across the antiferromagnetic phase transition
Authors:
Benjamin Pestka,
Jeff Strasdas,
Gustav Bihlmayer,
Adam K. Budniak,
Marcus Liebmann,
Niklas Leuth,
Honey Boban,
Vitaliy Feyer,
Iulia Cojocariu,
Daniel Baranowski,
Simone Mearini,
Yaron Amouyal,
Lutz Waldecker,
Bernd Beschoten,
Christoph Stampfer,
Lukasz Plucinski,
Efrat Lifshitz,
Peter Kratzer,
Markus Morgenstern
Abstract:
Magnetic 2D materials enable novel tuning options of magnetism. As an example, the van der Waals material FePS3, a zigzag-type intralayer antiferromagnet, exhibits very strong magnetoelastic coupling due to the different bond lengths along different ferromagnetic and antiferromagnetic coupling directions enabling elastic tuning of magnetic properties. The likely cause of the length change is the i…
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Magnetic 2D materials enable novel tuning options of magnetism. As an example, the van der Waals material FePS3, a zigzag-type intralayer antiferromagnet, exhibits very strong magnetoelastic coupling due to the different bond lengths along different ferromagnetic and antiferromagnetic coupling directions enabling elastic tuning of magnetic properties. The likely cause of the length change is the intricate competition between direct exchange of the Fe atoms and superexchange via the S and P atoms. To elucidate this interplay, we study the band structure of exfoliated FePS3 by mu m scale ARPES (Angular Resolved Photoelectron Spectroscopy), both, above and, for the first time, below the Neel temperature TN. We find three characteristic changes across TN. They involve S 3p-type bands, Fe 3d-type bands and P 3p-type bands, respectively, as attributed by comparison with density functional theory calculations (DFT+U). This highlights the involvement of all the atoms in the magnetic phase transition providing independent evidence for the intricate exchange paths.
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Submitted 23 August, 2024;
originally announced August 2024.
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Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure
Authors:
Baisali Kundu,
Priyanka Mondal,
David Tebbe,
Md. Nur Hassan,
Suman Kumar Chakraborty,
Marvin Metzelaars,
Paul Kögerler,
Debjani Karmakar,
Christoph Stampfer,
Bernd Beschoten,
Lutz Waldecker,
Prasana Kumar Sahoo
Abstract:
Controlling excitons and their transport in two-dimensional (2D) transition metal dichalcogenides (TMDs) heterostructures is central to advancing photonics and electronics on-chip integration. We investigate the controlled generation and manipulation of excitons and their complexes in monolayer (1L) MoSe2-WSe2 lateral heterostructure (LHS), directly grown via water-assisted chemical vapor depositi…
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Controlling excitons and their transport in two-dimensional (2D) transition metal dichalcogenides (TMDs) heterostructures is central to advancing photonics and electronics on-chip integration. We investigate the controlled generation and manipulation of excitons and their complexes in monolayer (1L) MoSe2-WSe2 lateral heterostructure (LHS), directly grown via water-assisted chemical vapor deposition. Using a field-effect transistor design by incorporating a few-layer graphene back gate, single-layer graphene edge contact and encapsulation with few-layer hexagonal boron nitride, we achieve precise electrical tuning of exciton complexes and their transfer across 1D interfaces. At cryogenic temperatures (4 K), photoluminescence and photocurrent maps reveal the synergistic effect of local electric field and interface phenomena in the modulation of excitons, trions, and free carriers. We observe spatial variations in exciton and trion densities driven by exciton-trion conversion under electrical manipulation. The first-principle density functional theory calculation reveals significant band modification at the lateral interfaces and graphene-TMDs contact region. Furthermore, we demonstrate the versatility of 2D TMDS LHS in hosting and manipulating quantum emitters, achieving precise control over narrow-band emissions through modulating carrier injection and electrical biasing. This work extends the boundary of the present understanding of excitonic behaviour within lateral heterojunctions, highlighting the potential for controlled exciton manipulation across 1D interfaces and paving the way for next-generation electro-optical quantum devices.
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Submitted 18 July, 2024;
originally announced July 2024.
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Negative electronic compressibility in charge islands in twisted bilayer graphene
Authors:
Robin J. Dolleman,
Alexander Rothstein,
Ammon Fischer,
Lennart Klebl,
Lutz Waldecker,
Kenji Watanabe,
Takashi Taniguchi,
Dante M. Kennes,
Florian Libisch,
Bernd Beschoten,
Christoph Stampfer
Abstract:
We report on the observation of negative electronic compressibility in twisted bilayer graphene for Fermi energies close to insulating states. To observe this negative compressibility, we take advantage of naturally occurring twist angle domains that emerge during the fabrication of the samples, leading to the formation of charge islands. We accurately measure their capacitance using Coulomb oscil…
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We report on the observation of negative electronic compressibility in twisted bilayer graphene for Fermi energies close to insulating states. To observe this negative compressibility, we take advantage of naturally occurring twist angle domains that emerge during the fabrication of the samples, leading to the formation of charge islands. We accurately measure their capacitance using Coulomb oscillations, from which we infer the compressibility of the electron gas. Notably, we not only observe the negative electronic compressibility near correlated insulating states at integer filling, but also prominently near the band insulating state at full filling, located at the edges of both the flat- and remote bands. Furthermore, the individual twist angle domains yield a well-defined carrier density, enabling us to quantify the strength of electronic interactions and verify the theoretical prediction that the inverse negative capacitance contribution is proportional to the average distance between the charge carriers. A detailed analysis of our findings suggests that Wigner crystallization is the most likely explanation for the observed negative electronic compressibility.
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Submitted 26 March, 2024;
originally announced March 2024.
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Distance dependence of the energy transfer mechanism in WS$_2$-graphene heterostructures
Authors:
David Tebbe,
Marc Schütte,
K. Watanabe,
T. Taniguchi,
Christoph Stampfer,
Bernd Beschoten,
Lutz Waldecker
Abstract:
We report on the mechanism of energy transfer in van der Waals heterostructures of the two-dimensional semiconductor WS$_2$ and graphene with varying interlayer distances, achieved through spacer layers of hexagonal boron nitride (hBN). We record photoluminescence and reflection spectra at interlayer distances between 0.5 nm and 5.8 nm (0-16 hBN layers). We find that the energy transfer is dominat…
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We report on the mechanism of energy transfer in van der Waals heterostructures of the two-dimensional semiconductor WS$_2$ and graphene with varying interlayer distances, achieved through spacer layers of hexagonal boron nitride (hBN). We record photoluminescence and reflection spectra at interlayer distances between 0.5 nm and 5.8 nm (0-16 hBN layers). We find that the energy transfer is dominated by states outside the light cone, indicative of a Förster transfer process, with an additional contribution from a Dexter process at 0.5 nm interlayer distance. We find that the measured dependence of the luminescence intensity on interlayer distances above 1 nm can be quantitatively described using recently reported values of the Förster transfer rates of thermalized charge carriers. At smaller interlayer distances, the experimentally observed transfer rates exceed the predictions and furthermore depend on excess energy as well as on excitation density. Since the transfer probability of the Förster mechanism depends on the momentum of electron-hole pairs, we conclude that at these distances, the transfer is driven by non-thermalized charge carrier distributions.
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Submitted 12 June, 2024; v1 submitted 5 January, 2024;
originally announced January 2024.
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An open-source robust machine learning platform for real-time detection and classification of 2D material flakes
Authors:
Jan-Lucas Uslu,
Taoufiq Ouaj,
David Tebbe,
Alexey Nekrasov,
Jo Henri Bertram,
Marc Schütte,
Kenji Watanabe,
Takashi Taniguchi,
Bernd Beschoten,
Lutz Waldecker,
Christoph Stampfer
Abstract:
The most widely used method for obtaining high-quality two-dimensional materials is through mechanical exfoliation of bulk crystals. Manual identification of suitable flakes from the resulting random distribution of crystal thicknesses and sizes on a substrate is a time-consuming, tedious task. Here, we present a platform for fully automated scanning, detection, and classification of two-dimension…
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The most widely used method for obtaining high-quality two-dimensional materials is through mechanical exfoliation of bulk crystals. Manual identification of suitable flakes from the resulting random distribution of crystal thicknesses and sizes on a substrate is a time-consuming, tedious task. Here, we present a platform for fully automated scanning, detection, and classification of two-dimensional materials, the source code of which we make openly available. Our platform is designed to be accurate, reliable, fast, and versatile in integrating new materials, making it suitable for everyday laboratory work. The implementation allows fully automated scanning and analysis of wafers with an average inference time of 100 ms for images of 2.3 Mpixels. The developed detection algorithm is based on a combination of the flakes' optical contrast toward the substrate and their geometric shape. We demonstrate that it is able to detect the majority of exfoliated flakes of various materials, with an average recall (AR50) between 67% and 89%. We also show that the algorithm can be trained with as few as five flakes of a given material, which we demonstrate for the examples of few-layer graphene, WSe$_2$, MoSe$_2$, CrI$_3$, 1T-TaS$_2$ and hexagonal BN. Our platform has been tested over a two-year period, during which more than $10^6$ images of multiple different materials were acquired by over 30 individual researchers.
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Submitted 17 January, 2024; v1 submitted 26 June, 2023;
originally announced June 2023.
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Spin and Charge Fluctuation Induced Pairing in ABCB Tetralayer Graphene
Authors:
Ammon Fischer,
Lennart Klebl,
Jonas B. Profe,
Alexander Rothstein,
Lutz Waldecker,
Bernd Beschoten,
Tim O. Wehling,
Dante M. Kennes
Abstract:
Motivated by the recent experimental realization of ABCB stacked tetralayer graphene [Wirth et al., ACS Nano 16, 16617 (2022)], we study correlated phenomena in moiré-less graphene tetralayers for realistic interaction profiles using an orbital resolved random phase approximation approach. We demonstrate that magnetic fluctuations originating from local interactions are crucial close to the van…
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Motivated by the recent experimental realization of ABCB stacked tetralayer graphene [Wirth et al., ACS Nano 16, 16617 (2022)], we study correlated phenomena in moiré-less graphene tetralayers for realistic interaction profiles using an orbital resolved random phase approximation approach. We demonstrate that magnetic fluctuations originating from local interactions are crucial close to the van Hove singularities on the electron- and hole-doped side promoting layer selective ferrimagnetic states. Spin fluctuations around these magnetic states enhance unconventional spin-triplet, valley-singlet superconductivity with $f$-wave symmetry due to intervalley scattering. Charge fluctuations arising from long range Coulomb interactions promote doubly degenerate p-wave superconductivity close to the van Hove singularities. At the conduction band edge of ABCB graphene, we find that both spin and charge fluctuations drive $f$-wave superconductivity. Our analysis suggests a strong competition between superconducting states emerging from long- and short-ranged Coulomb interactions and thus stresses the importance of microscopically derived interaction profiles to make reliable predictions for the origin of superconductivity in graphene based heterostructures.
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Submitted 25 May, 2023; v1 submitted 23 May, 2023;
originally announced May 2023.
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Hyperspectral photoluminescence and reflectance microscopy of 2D materials
Authors:
David Tebbe,
Marc Schütte,
Baisali Kundu,
Bernd Beschoten,
Prasana K. Sahoo,
Lutz Waldecker
Abstract:
Optical micro-spectroscopy is an invaluable tool for studying and characterizing samples ranging from classical semiconductors to low-dimensional materials and heterostructures. To date, most implementations are based on point-scanning techniques, which are flexible and reliable, but slow. Here, we describe a setup for highly parallel acquisition of hyperspectral reflection and photoluminescence m…
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Optical micro-spectroscopy is an invaluable tool for studying and characterizing samples ranging from classical semiconductors to low-dimensional materials and heterostructures. To date, most implementations are based on point-scanning techniques, which are flexible and reliable, but slow. Here, we describe a setup for highly parallel acquisition of hyperspectral reflection and photoluminescence microscope images using a push-broom technique. Spatial as well as spectral distortions are characterized and their digital corrections are presented. We demonstrate close-to diffraction-limited spatial imaging performance and a spectral resolution limited by the spectrograph. The capabilities of the setup are demonstrated by recording a hyperspectral photoluminescence map of a CVD-grown MoSe$_2$-WSe$_2$ lateral heterostructure, from which we extract the luminescence energies, intensities and peak widths across the interface.
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Submitted 21 November, 2023; v1 submitted 11 May, 2023;
originally announced May 2023.
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Tailoring the dielectric screening in WS$_2$-graphene heterostructures
Authors:
David Tebbe,
Marc Schütte,
Kenji Watanabe,
Takashi Taniguchi,
Christoph Stampfer,
Bernd Beschoten,
Lutz Waldecker
Abstract:
The environment contributes to the screening of Coulomb interactions in two-dimensional semiconductors. This can potentially be exploited to tailor material properties as well as for sensing applications. Here, we investigate the tuning of the band gap and the exciton binding energy in the two-dimensional semiconductor WS$_2$ via the external dielectric screening. Embedding WS$_2$ in van der Waals…
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The environment contributes to the screening of Coulomb interactions in two-dimensional semiconductors. This can potentially be exploited to tailor material properties as well as for sensing applications. Here, we investigate the tuning of the band gap and the exciton binding energy in the two-dimensional semiconductor WS$_2$ via the external dielectric screening. Embedding WS$_2$ in van der Waals heterostructures with graphene and hBN spacers of thicknesses between one and 16 atomic layers, we experimentally determine both energies as a function of the \WS-to-graphene interlayer distance. We find that the modification to the band gap as well as the exciton binding energy are well described by a one-over-distance dependence, with a significant effect remaining at several nm distance, at which the two layers are electrically well isolated. This observation is explained by a screening arising from an image charge induced by the graphene layer. Furthermore, we find that the effectiveness of graphene to screen Coulomb interactions in nearby WS$_2$ depends on its doping level and can therefore be controlled via the electric field effect. We determine that, at room temperature, it is modified by approximately 20\% for charge carrier densities of $2\times10^{12}$ cm$^{-2}$.
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Submitted 15 March, 2023; v1 submitted 30 November, 2022;
originally announced December 2022.
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Twist angle dependent interlayer transfer of valley polarization from excitons to free charge carriers in WSe$_2$/MoSe$_2$ heterobilayers
Authors:
Frank Volmer,
Manfred Ersfeld,
Paulo E. Faria Junior,
Lutz Waldecker,
Bharti Parashar,
Lars Rathmann,
Sudipta Dubey,
Iulia Cojocariu,
Vitaliy Feyer,
Kenji Watanabe,
Takashi Taniguchi,
Claus M. Schneider,
Lukasz Plucinski,
Christoph Stampfer,
Jaroslav Fabian,
Bernd Beschoten
Abstract:
We identify an optical excitation mechanism that transfers a valley polarization from photo-excited electron-hole pairs to free charge carriers in twisted WSe$_2$/MoSe$_2$ heterobilayers. For small twist angles, the valley lifetimes of the charge carriers are surprisingly short, despite the occurrence of interlayer excitons with their presumably long recombination and polarization lifetimes. For l…
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We identify an optical excitation mechanism that transfers a valley polarization from photo-excited electron-hole pairs to free charge carriers in twisted WSe$_2$/MoSe$_2$ heterobilayers. For small twist angles, the valley lifetimes of the charge carriers are surprisingly short, despite the occurrence of interlayer excitons with their presumably long recombination and polarization lifetimes. For large twist angles, we measure an increase in both the valley polarization and its respective lifetime by more than two orders of magnitude. Interestingly, in such heterobilayers we observe an interlayer transfer of valley polarization from the WSe$_2$ layer into the MoSe$_2$ layer. This mechanism enables the creation of a photo-induced valley polarization of free charge carriers in MoSe$_2$, which amplitude scales with the gate-induced charge carrier density. This is in contrast to monolayer MoSe$_2$, where such a gate-tunable valley polarization cannot be achieved. By combining time-resolved Kerr rotation, photoluminesence and angle-resolved photoemission spectroscopy measurements with first principles calculations, we show that these findings can be explained by twist angle dependent interlayer scattering mechanisms involving the Q- and $Γ$-valleys.
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Submitted 30 May, 2023; v1 submitted 30 November, 2022;
originally announced November 2022.
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Experimental observation of ABCB stacked tetralayer graphene
Authors:
Konstantin G. Wirth,
Jonas B. Profe,
Alexander Rothstein,
Hristiyana Kyoseva,
Dario Siebenkotten,
Lukas Conrads,
Lennart Klebl,
Ammon Fischer,
Bernd Beschoten,
Christoph Stampfer,
Dante M. Kennes,
Lutz Waldecker,
Thomas Taubner
Abstract:
In tetralayer graphene, three inequivalent layer stackings should exist, however, only rhombohedral (ABCA) and Bernal (ABAB) stacking have so far been observed. The three stacking sequences differ in their electronic structure, with the elusive third stacking (ABCB) being unique as it is predicted to exhibit an intrinsic bandgap as well as locally flat bands around the K points. Here, we use scatt…
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In tetralayer graphene, three inequivalent layer stackings should exist, however, only rhombohedral (ABCA) and Bernal (ABAB) stacking have so far been observed. The three stacking sequences differ in their electronic structure, with the elusive third stacking (ABCB) being unique as it is predicted to exhibit an intrinsic bandgap as well as locally flat bands around the K points. Here, we use scattering-type scanning near-field optical microscopy and confocal Raman microscopy to identify and characterize domains of ABCB stacked tetralayer graphene. We differentiate between the three stacking sequences by addressing characteristic interband contributions in the optical conductivity between 0.28 and 0.56 eV with amplitude and phase-resolved near-field nano-spectroscopy. By normalizing adjacent flakes to each other, we achieve good agreement between theory and experiment, allowing for the unambiguous assignment of ABCB domains in tetralayer graphene. These results establish near-field spectroscopy at the interband transitions as a semi-quantitative tool, enabling the recognition of ABCB domains in tetralyer graphene flakes and therefore, providing a basis to study correlation physics of this exciting phase.
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Submitted 15 September, 2022; v1 submitted 15 March, 2022;
originally announced March 2022.
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Enhanced nonlinear interaction of polaritons via excitonic Rydberg states in monolayer WSe2
Authors:
Jie Gu,
Valentin Walther,
Lutz Waldecker,
Daniel Rhodes,
Archana Raja,
James C. Hone,
Tony F. Heinz,
Stephane Kena-Cohen,
Thomas Pohl,
Vinod M. Menon
Abstract:
Strong optical nonlinearities play a central role in realizing quantum photonic technologies. In solid state systems, exciton-polaritons, which result from the hybridization of material excitations and cavity photons, are an attractive candidate to realize such nonlinearities. Here, the interaction between excitons forms the basis of the polaritonic nonlinearity. While the interaction between grou…
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Strong optical nonlinearities play a central role in realizing quantum photonic technologies. In solid state systems, exciton-polaritons, which result from the hybridization of material excitations and cavity photons, are an attractive candidate to realize such nonlinearities. Here, the interaction between excitons forms the basis of the polaritonic nonlinearity. While the interaction between ground state excitons generates a notable optical nonlinearity, the strength of such ground state interactions is generally not sufficient to reach the regime of quantum nonlinear optics and strong single-polariton interactions. Excited states, however, feature enhanced interactions and therefore hold promise for accessing the quantum domain of single-photon nonlinearities, as demonstrated with high-lying Rydberg states of cold atomic systems. Excitons in excited states have recently been observed in monolayer transition metal dichalcogenides. Here we demonstrate the formation of exciton-polaritons using the first excited excitonic state in monolayer tungsten diselenide (WSe2) embedded in a microcavity. Owing to the larger exciton size compared to their ground state counterpart, the realized polaritons exhibit an enhanced nonlinear response by more than an order of magnitude, as evidenced through a modification of the cavity Rabi splitting. The demonstration of excited exciton-polaritons in two-dimensional semiconductors and their enhanced nonlinear response presents the first step towards the generation of strong photon interactions in solid state systems, a necessary building block for quantum photonic technologies.
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Submitted 28 December, 2019;
originally announced December 2019.
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Rigid band shifts in two-dimensional semiconductors through environmental screening
Authors:
Lutz Waldecker,
Archana Raja,
Malte Rösner,
Christina Steinke,
Aaron Bostwick,
Roland J. Koch,
Chris Jozwiak,
Takashi Taniguchi,
Kenji Watanabe,
Eli Rotenberg,
Tim O. Wehling,
Tony F. Heinz
Abstract:
We investigate the effects of environmental dielectric screening on the electronic dispersion and the band gap in the atomically-thin, quasi two-dimensional (2D) semiconductor WS$_2$ using correlative angle-resolved photoemission and optical spectroscopies, along with first-principles calculations. We find the main effect of increased environmental screening to be a reduction of the band gap, with…
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We investigate the effects of environmental dielectric screening on the electronic dispersion and the band gap in the atomically-thin, quasi two-dimensional (2D) semiconductor WS$_2$ using correlative angle-resolved photoemission and optical spectroscopies, along with first-principles calculations. We find the main effect of increased environmental screening to be a reduction of the band gap, with little change to the electronic dispersion of the band structure. These essentially rigid shifts of the bands results from the special spatial structure of the changes in the Coulomb potential induced by the dielectric environment in the 2D limit. Our results suggest dielectric engineering as a non-invasive method of tailoring the band structure of 2D semiconductors and provide guidance for understanding the electronic properties of 2D materials embedded in multilayer heterostructures.
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Submitted 11 July, 2019;
originally announced July 2019.
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Intrinsic Lifetime of Higher Excitonic States in Tungsten Diselenide Monolayers
Authors:
Samuel Brem,
Jonas Zipfel,
Malte Selig,
Archana Raja,
Lutz Waldecker,
Jonas Ziegler,
Takashi Taniguchi,
Kenji Watanabe,
Alexey Chernikov,
Ermin Malic
Abstract:
The reduced dielectric screening in atomically thin transition metal dichalcogenides allows to study the hydrogen-like series of higher exciton states in optical spectra even at room temperature. The width of excitonic peaks provides information about the radiative decay and phonon-assisted scattering channels limiting the lifetime of these quasi-particles. While linewidth studies so far have been…
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The reduced dielectric screening in atomically thin transition metal dichalcogenides allows to study the hydrogen-like series of higher exciton states in optical spectra even at room temperature. The width of excitonic peaks provides information about the radiative decay and phonon-assisted scattering channels limiting the lifetime of these quasi-particles. While linewidth studies so far have been limited to the exciton ground state, encapsulation with hBN has recently enabled quantitative measurements of the broadening of excited exciton resonances. Here, we present a joint experiment-theory study combining microscopic calculations with spectroscopic measurements on the intrinsic linewidth and lifetime of higher exciton states in hBN-encapsulated WSe$_2$ monolayers. Surprisingly, despite the increased number of scattering channels, we find both in theory and experiment that the linewidth of higher excitonic states is similar or even smaller compared to the ground state. Our microscopic calculations ascribe this behavior to a reduced exciton-phonon scattering efficiency for higher excitons due to spatially extended orbital functions.
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Submitted 9 April, 2019;
originally announced April 2019.
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Ultrafast heat flow in heterostructures of Au nanoclusters on thin-films: atomic-disorder induced by hot electrons
Authors:
Thomas Vasileiadis,
Lutz Waldecker,
Dawn Foster,
Alessandra Da Silva,
Daniela Zahn,
Roman Bertoni,
Richard E. Palmer,
Ralph Ernstorfer
Abstract:
We study the ultrafast structural dynamics, in response to electronic excitations, in heterostructures composed of Au$_{923}$ nanoclusters on thin-film substrates with the use of femtosecond electron diffraction. Various forms of atomic motion, such as thermal vibrations, thermal expansion and lattice disordering, manifest as distinct and quantifiable reciprocal-space observables. In photo-excited…
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We study the ultrafast structural dynamics, in response to electronic excitations, in heterostructures composed of Au$_{923}$ nanoclusters on thin-film substrates with the use of femtosecond electron diffraction. Various forms of atomic motion, such as thermal vibrations, thermal expansion and lattice disordering, manifest as distinct and quantifiable reciprocal-space observables. In photo-excited, supported nanoclusters thermal equilibration proceeds through intrinsic heat flow, between their electrons and their lattice, and extrinsic heat flow between the nanoclusters and their substrate. For an in-depth understanding of this process, we have extended the two-temperature model to the case of 0D/2D heterostructures and used it to describe energy flow among the various subsystems, to quantify interfacial coupling constants, and to elucidate the role of the optical and thermal substrate properties. When lattice heating of Au nanoclusters is dominated by intrinsic heat flow, a reversible disordering of atomic positions occurs, which is absent when heat is injected as hot substrate-phonons. The present analysis indicates that hot electrons can distort the lattice of nanoclusters, even if the lattice temperature is below the equilibrium threshold for surface pre-melting. Based on simple considerations, the effect is interpreted as activation of surface diffusion due to modifications of the potential energy surface at high electronic temperatures. We discuss the implications of such a process in structural changes during surface chemical reactions.
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Submitted 12 July, 2018; v1 submitted 28 February, 2018;
originally announced March 2018.
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Momentum-Resolved View of Electron-Phonon Coupling in Multilayer WSe$_2$
Authors:
Lutz Waldecker,
Roman Bertoni,
H. Hübener,
Thomas Brumme,
Thomas Vasileiadis,
Daniela Zahn,
Angel Rubio,
Ralph Ernstorfer
Abstract:
We investigate the interactions of photoexcited carriers with lattice vibrations in thin films of the layered transition metal dichalcogenide (TMDC) WSe$_2$. Employing femtosecond electron diffraction with monocrystalline samples and first principle density functional theory calculations, we obtain a momentum-resolved picture of the energy-transfer from excited electrons to phonons. The measured m…
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We investigate the interactions of photoexcited carriers with lattice vibrations in thin films of the layered transition metal dichalcogenide (TMDC) WSe$_2$. Employing femtosecond electron diffraction with monocrystalline samples and first principle density functional theory calculations, we obtain a momentum-resolved picture of the energy-transfer from excited electrons to phonons. The measured momentum-dependent phonon population dynamics are compared to first principle calculations of the phonon linewidth and can be rationalized in terms of electronic phase-space arguments. The relaxation of excited states in the conduction band is dominated by intervalley scattering between $Σ$ valleys and the emission of zone-boundary phonons. Transiently, the momentum-dependent electron-phonon coupling leads to a non-thermal phonon distribution, which, on longer timescales, relaxes to a thermal distribution via electron-phonon and phonon-phonon collisions. Our results constitute a basis for monitoring and predicting out of equilibrium electrical and thermal transport properties for nanoscale applications of TMDCs.
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Submitted 29 June, 2017; v1 submitted 9 March, 2017;
originally announced March 2017.
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Coherent and Incoherent Structural Dynamics in Laser-Excited Antimony
Authors:
Lutz Waldecker,
Tobias Zier,
Thomas Vasileiadis,
Roman Bertoni,
Felipe Valencia H.,
Martin E. Garcia,
Eeuwe S. Zijlstra,
Ralph Ernstorfer
Abstract:
We investigate the excitation of phonons in photoexcited antimony and demonstrate that the entire electron-lattice interactions, in particular coherent and incoherent electron-phonon coupling, can be probed simultaneously. Using femtosecond electron diffraction (FED) with high temporal resolution, we observe the coherent excitation of the fully symmetric \Ag\ optical phonon mode via the shift of t…
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We investigate the excitation of phonons in photoexcited antimony and demonstrate that the entire electron-lattice interactions, in particular coherent and incoherent electron-phonon coupling, can be probed simultaneously. Using femtosecond electron diffraction (FED) with high temporal resolution, we observe the coherent excitation of the fully symmetric \Ag\ optical phonon mode via the shift of the minimum of the atomic potential energy surface. Ab initio molecular dynamics simulations on laser excited potential energy surfaces are performed to quantify the change in lattice potential and the associated real-space amplitude of the coherent atomic oscillations. Good agreement is obtained between the parameter-free calculations and the experiment. In addition, our experimental configuration allows observing the energy transfer from electrons to phonons via incoherent electron-lattice scattering events. The electron-phonon coupling is determined as a function of electronic temperature from our DFT calculations and the data by applying different models for the energy-transfer.
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Submitted 12 January, 2017; v1 submitted 11 August, 2016;
originally announced August 2016.
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Generation and evolution of spin-, valley- and layer-polarized excited carriers in inversion-symmetric WSe2
Authors:
Roman Bertoni,
Christopher W. Nicholson,
Lutz Waldecker,
Hannes Hübener,
Claude Monney,
Umberto De Giovannini,
Michele Puppin,
Moritz Hoesch,
Emma Springate,
Richard T. Chapman,
Cephise Cacho,
Martin Wolf,
Angel Rubio,
Ralph Ernstorfer
Abstract:
Manipulation of spin and valley degrees of freedom is a key step towards realizing novel quantum technologies, for which atomically thin transition metal dichalcogenides (TMDCs) have been established as promising candidates. In monolayer TMDCs, the lack of inversion symmetry gives rise to a spin-valley correlation of the band structure allowing for valley-selective electronic excitation with circu…
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Manipulation of spin and valley degrees of freedom is a key step towards realizing novel quantum technologies, for which atomically thin transition metal dichalcogenides (TMDCs) have been established as promising candidates. In monolayer TMDCs, the lack of inversion symmetry gives rise to a spin-valley correlation of the band structure allowing for valley-selective electronic excitation with circularly polarized light. Here we show that, even in centrosymmetric samples of 2H-WSe2, circularly polarized light can generate spin-, valley- and layer-polarized excited states in the conduction band. Employing time- and angle-resolved photoemission spectroscopy (trARPES) with spin-selective excitation, the dynamics of valley and layer pseudospins of the excited carriers are investigated. Complementary time-dependent density functional theory (TDDFT) calculations of the excited state populations reveal a strong circular dichroism of the spin-, valley- and layer-polarizations and a pronounced 2D character of the excited states in the K valleys. We observe scattering of carriers towards the global minimum of the conduction band on a sub-100 femtosecond timescale to states with three-dimensional character facilitating inter-layer charge transfer. Our results establish the optical control of coupled spin-, valley- and layer-polarized states in centrosymmetric materials and suggest the suitability of TMDC multilayer materials for valleytronic and spintronic device concepts.
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Submitted 2 January, 2017; v1 submitted 10 June, 2016;
originally announced June 2016.
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Electron-phonon coupling and energy flow in a simple metal beyond the two-temperature approximation
Authors:
Lutz Waldecker,
Roman Bertoni,
Jan Vorberger,
Ralph Ernstorfer
Abstract:
The electron-phonon coupling and the corresponding energy exchange was investigated experimentally and by ab initio theory in non-equilibrium states of the free-electron metal aluminium. The temporal evolution of the atomic mean squared displacement in laser-excited thin free-standing films was monitored by femtosecond electron diffraction. The electron-phonon coupling strength was obtained for a…
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The electron-phonon coupling and the corresponding energy exchange was investigated experimentally and by ab initio theory in non-equilibrium states of the free-electron metal aluminium. The temporal evolution of the atomic mean squared displacement in laser-excited thin free-standing films was monitored by femtosecond electron diffraction. The electron-phonon coupling strength was obtained for a range of electronic and lattice temperatures from density functional theory molecular dynamics (DFT-MD) simulations. The electron-phonon coupling parameter extracted from the experimental data in the framework of a two-temperature model (TTM) deviates significantly from the ab initio values. We introduce a non-thermal lattice model (NLM) for describing non-thermal phonon distributions as a sum of thermal distributions of the three phonon branches. The contributions of individual phonon branches to the electron-phonon coupling are considered independently and found to be dominated by longitudinal acoustic phonons. Using all material parameters from first-principle calculations besides the phonon-phonon coupling strength, the prediction of the energy transfer from electrons to phonons by the NLM is in excellent agreement with time-resolved diffraction data. Our results suggest that the TTM is insufficient for describing the microscopic energy flow even for simple metals like aluminium and that the determination of the electron-phonon coupling constant from time-resolved experiments by means of the TTM leads to incorrect values. In contrast, the NLM describing transient phonon populations by three parameters appears to be a sufficient model for quantitatively describing electron-lattice equilibration in aluminium. We discuss the general applicability of the NLM and provide a criterion for the suitability of the two-temperature approximation for other metals.
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Submitted 2 March, 2016; v1 submitted 14 July, 2015;
originally announced July 2015.
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Time-Domain Separation of Optical Properties From Structural Transitions in Resonantly Bonded Materials
Authors:
Lutz Waldecker,
Timothy A. Miller,
Miquel Rude,
Roman Bertoni,
Johann Osmond,
Valerio Pruneri,
Robert Simpson,
Ralph Ernstorfer,
Simon Wall
Abstract:
The extreme electro-optical contrast between crystalline and amorphous states in phase change materials is routinely exploited in optical data storage and future applications include universal memories, flexible displays, reconfigurable optical circuits, and logic devices. Optical contrast is believed to arise due to a change in crystallinity. Here we show that the connection between optical prope…
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The extreme electro-optical contrast between crystalline and amorphous states in phase change materials is routinely exploited in optical data storage and future applications include universal memories, flexible displays, reconfigurable optical circuits, and logic devices. Optical contrast is believed to arise due to a change in crystallinity. Here we show that the connection between optical properties and structure can be broken. Using a unique combination of single-shot femtosecond electron diffraction and optical spectroscopy, we simultaneously follow the lattice dynamics and dielectric function in the phase change material Ge2Sb2Te5 during an irreversible state transformation. The dielectric function changes by 30% within 100 femtoseconds due to a rapid depletion of electrons from resonantly-bonded states. This occurs without perturbing the crystallinity of the lattice, which heats with a 2 ps time constant. The optical changes are an order-of-magnitude larger than those achievable with silicon and present new routes to manipulate light on an ultrafast timescale without structural changes.
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Submitted 10 August, 2015; v1 submitted 2 December, 2014;
originally announced December 2014.
