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Ultrathin Magnesium-based Coating as an Efficient Oxygen Barrier for Superconducting Circuit Materials
Authors:
Chenyu Zhou,
Junsik Mun,
Juntao Yao,
Aswin kumar Anbalagan,
Mohammad D. Hossain,
Russell A. McLellan,
Ruoshui Li,
Kim Kisslinger,
Gengnan Li,
Xiao Tong,
Ashley R. Head,
Conan Weiland,
Steven L. Hulbert,
Andrew L. Walter,
Qiang Li,
Yimei Zhu,
Peter V. Sushko,
Mingzhao Liu
Abstract:
Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately…
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Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately placing a limit on the coherence time. In this study, we present a novel approach for suppressing the formation of tantalum oxide using an ultrathin magnesium (Mg) capping layer deposited on top of tantalum. Synchrotron-based X-ray photoelectron spectroscopy (XPS) studies demonstrate that oxide is confined to an extremely thin region directly beneath the Mg/Ta interface. Additionally, we demonstrate that the superconducting properties of thin Ta films are improved following the Mg capping, exhibiting sharper and higher-temperature transitions to superconductive and magnetically ordered states. Based on the experimental data and computational modeling, we establish an atomic-scale mechanistic understanding of the role of the capping layer in protecting Ta from oxidation. This work provides valuable insights into the formation mechanism and functionality of surface tantalum oxide, as well as a new materials design principle with the potential to reduce dielectric loss in superconducting quantum materials. Ultimately, our findings pave the way for the realization of large-scale, high-performance quantum computing systems.
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Submitted 25 September, 2023; v1 submitted 21 September, 2023;
originally announced September 2023.
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Low-noise single-photon counting superconducting nanowire detectors at infrared wavelengths up to 29 $μ$m
Authors:
Gregor G. Taylor,
Alexander B. Walter,
Boris Korzh,
Bruce Bumble,
Sahil R. Patel,
Jason P. Allmaras,
Andrew D. Beyer,
Roger O'Brient,
Matthew D. Shaw,
Emma E. Wollman
Abstract:
We report on the extension of the spectral sensitivity of superconducting nanowire single-photon detectors to a wavelength of 29 $μ$m. This represents the first demonstration of a time correlated single-photon counting detector at these long infrared wavelengths. We achieve saturated internal detection efficiency from 10 to 29 $μ$m, whilst maintaining dark count rates below 0.1 counts per second.…
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We report on the extension of the spectral sensitivity of superconducting nanowire single-photon detectors to a wavelength of 29 $μ$m. This represents the first demonstration of a time correlated single-photon counting detector at these long infrared wavelengths. We achieve saturated internal detection efficiency from 10 to 29 $μ$m, whilst maintaining dark count rates below 0.1 counts per second. Extension of superconducting nanowire single-photon detectors to this spectral range provides low noise and high timing resolution photon counting detection, effectively providing a new class of single-photon sensitive detector for these wavelengths. These detectors are important for applications such as exoplanet spectroscopy, infrared astrophysics, physical chemistry, remote sensing and direct dark-matter detection.
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Submitted 29 August, 2023;
originally announced August 2023.
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Interactions enable Thouless pumping in a nonsliding lattice
Authors:
Konrad Viebahn,
Anne-Sophie Walter,
Eric Bertok,
Zijie Zhu,
Marius Gächter,
Armando A. Aligia,
Fabian Heidrich-Meisner,
Tilman Esslinger
Abstract:
A topological 'Thouless' pump represents the quantised motion of particles in response to a slow, cyclic modulation of external control parameters. The Thouless pump, like the quantum Hall effect, is of fundamental interest in physics because it links physically measurable quantities, such as particle currents, to geometric properties of the experimental system, which can be robust against perturb…
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A topological 'Thouless' pump represents the quantised motion of particles in response to a slow, cyclic modulation of external control parameters. The Thouless pump, like the quantum Hall effect, is of fundamental interest in physics because it links physically measurable quantities, such as particle currents, to geometric properties of the experimental system, which can be robust against perturbations and thus technologically useful. So far, experiments probing the interplay between topology and inter-particle interactions have remained relatively scarce. Here we observe a Thouless-type charge pump in which the particle current and its directionality inherently rely on the presence of strong interactions. Experimentally, we utilise a two-component Fermi gas in a dynamical superlattice which does not exhibit a sliding motion and remains trivial in the single-particle regime. However, when tuning interparticle interactions from zero to positive values, the system undergoes a transition from being stationary to drifting in one direction, consistent with quantised pumping in the first cycle. Remarkably, the topology of the interacting pump trajectory cannot be adiabatically connected to a non-interacting limit, highlighted by the fact that only one atom is transferred per cycle. Our experiments suggest that Thouless charge pumps are promising platforms to gain insights into interaction-driven topological transitions and topological quantum matter.
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Submitted 2 July, 2024; v1 submitted 7 August, 2023;
originally announced August 2023.
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Topological Floquet engineering using two frequencies in two dimensions
Authors:
Yixiao Wang,
Anne-Sophie Walter,
Gregor Jotzu,
Konrad Viebahn
Abstract:
Using two-frequency driving in two dimensions opens up new possibilites for Floquet engineering, which range from controlling specific symmetries to tuning the properties of resonant gaps. In this work, we study two-band lattice models subject to two-tone Floquet driving and analyse the resulting effective Floquet bandstructures both numerically and analytically. On the one hand, we extend the met…
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Using two-frequency driving in two dimensions opens up new possibilites for Floquet engineering, which range from controlling specific symmetries to tuning the properties of resonant gaps. In this work, we study two-band lattice models subject to two-tone Floquet driving and analyse the resulting effective Floquet bandstructures both numerically and analytically. On the one hand, we extend the methodology of Sandholzer et al. [10.1103/PhysRevResearch.4.013056] from one to two dimensions and find competing topological phases in a simple Bravais lattice when the two resonant drives at $1ω$ and $2ω$ interfere. On the other hand, we explore driving-induced symmetry breaking in the hexagonal lattice, in which the breaking of either inversion or time-reversal symmetry can be tuned independently via the Floquet modulation. Possible applications of our work include a simpler generation of topological bands for ultracold atoms, and the realisation of non-linear Hall effects as well as Haldane's parity anomaly in inversion-symmetric parent lattices.
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Submitted 12 January, 2023;
originally announced January 2023.
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Chemical profiles of the oxides on tantalum in state of the art superconducting circuits
Authors:
Russell A. McLellan,
Aveek Dutta,
Chenyu Zhou,
Yichen Jia,
Conan Weiland,
Xin Gui,
Alexander P. M. Place,
Kevin D. Crowley,
Xuan Hoang Le,
Trisha Madhavan,
Youqi Gang,
Lukas Baker,
Ashley R. Head,
Iradwikanari Waluyo,
Ruoshui Li,
Kim Kisslinger,
Adrian Hunt,
Ignace Jarrige,
Stephen A. Lyon,
Andi M. Barbour,
Robert J. Cava,
Andrew A. Houck,
Steven L. Hulbert,
Mingzhao Liu,
Andrew L. Walter
, et al. (1 additional authors not shown)
Abstract:
Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently…
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Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently showed that replacing the metal in the capacitor of a transmon with tantalum yields record relaxation and coherence times for superconducting qubits, motivating a detailed study of the tantalum surface. In this work, we study the chemical profile of the surface of tantalum films grown on c-plane sapphire using variable energy X-ray photoelectron spectroscopy (VEXPS). We identify the different oxidation states of tantalum that are present in the native oxide resulting from exposure to air, and we measure their distribution through the depth of the film. Furthermore, we show how the volume and depth distribution of these tantalum oxidation states can be altered by various chemical treatments. By correlating these measurements with detailed measurements of quantum devices, we can improve our understanding of the microscopic device losses.
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Submitted 20 January, 2023; v1 submitted 11 January, 2023;
originally announced January 2023.
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Reversal of quantised Hall drifts at non-interacting and interacting topological boundaries
Authors:
Zijie Zhu,
Marius Gächter,
Anne-Sophie Walter,
Konrad Viebahn,
Tilman Esslinger
Abstract:
The transport properties of gapless edge modes at boundaries between topologically distinct domains are of fundamental and technological importance. Therefore, it is crucial to gain a better understanding of topological edge states and their response to interparticle interactions. Here, we experimentally study long-distance quantised Hall drifts in a harmonically confined topological pump of non-i…
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The transport properties of gapless edge modes at boundaries between topologically distinct domains are of fundamental and technological importance. Therefore, it is crucial to gain a better understanding of topological edge states and their response to interparticle interactions. Here, we experimentally study long-distance quantised Hall drifts in a harmonically confined topological pump of non-interacting and interacting ultracold fermionic atoms. We find that quantised drifts halt and reverse their direction when the atoms reach a critical slope of the confining potential, revealing the presence of a topological boundary. The drift reversal corresponds to a band transfer between a band with Chern number $C = +1$ and a band with $C = -1$ via a gapless edge mode, in agreement with the bulk-edge correspondence for non-interacting particles. We establish that a non-zero repulsive Hubbard interaction leads to the emergence of an additional edge in the system, relying on a purely interaction-induced mechanism, in which pairs of fermions are split.
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Submitted 6 May, 2024; v1 submitted 9 January, 2023;
originally announced January 2023.
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Quantisation and its breakdown in a Hubbard-Thouless pump
Authors:
Anne-Sophie Walter,
Zijie Zhu,
Marius Gächter,
Joaquín Minguzzi,
Stephan Roschinski,
Kilian Sandholzer,
Konrad Viebahn,
Tilman Esslinger
Abstract:
Geometric properties of waves and wave functions can explain the appearance of integer-valued observables throughout physics. For example, these 'topological' invariants describe the plateaux observed in the quantised Hall effect and the pumped charge in its dynamic analogon, the Thouless pump. However, the presence of interparticle interactions can profoundly affect the topology of a material, in…
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Geometric properties of waves and wave functions can explain the appearance of integer-valued observables throughout physics. For example, these 'topological' invariants describe the plateaux observed in the quantised Hall effect and the pumped charge in its dynamic analogon, the Thouless pump. However, the presence of interparticle interactions can profoundly affect the topology of a material, invalidating the idealised formulation in terms of Bloch waves. Despite pioneering experiments in solid state systems, photonic waveguides, and optical lattices, the study of topological insulators under variation of inter-particle interactions has proven challenging. Here, we experimentally realise a topological Thouless pump with tuneable Hubbard interactions in an optical lattice and observe regimes with robust pumping, as well as an interaction-induced breakdown. We confirm the pump's robustness against interactions that are smaller than the protecting gap, which holds true for both repulsive and attractive Hubbard $U$. Furthermore, we identify that bound pairs of fermions are responsible for quantised transport at strongly attractive $U$, supported by measurements of pair fraction and adiabaticity. For strong repulsive interactions, on the contrary, topological pumping breaks down. Yet, we can reinstate quantised pumping by modifying the pump trajectory while starting from the same initial state. Our experiments pave the way for investigating interacting topological insulators, including edge effects and interaction-induced topological phases.
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Submitted 10 August, 2023; v1 submitted 13 April, 2022;
originally announced April 2022.
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Topological pumping in a Floquet-Bloch band
Authors:
Joaquín Minguzzi,
Zijie Zhu,
Kilian Sandholzer,
Anne-Sophie Walter,
Konrad Viebahn,
Tilman Esslinger
Abstract:
Constructing new topological materials is of vital interest for the development of robust quantum applications. However, engineering such materials often causes technological overhead, such as large magnetic fields, specific lattice geometries, strong spin-orbit coupling, synthetic dimensions, or dynamical superlattice potentials. Simplifying the experimental requirements has been addressed on a c…
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Constructing new topological materials is of vital interest for the development of robust quantum applications. However, engineering such materials often causes technological overhead, such as large magnetic fields, specific lattice geometries, strong spin-orbit coupling, synthetic dimensions, or dynamical superlattice potentials. Simplifying the experimental requirements has been addressed on a conceptual level - by proposing to combine simple lattice structures with Floquet engineering - but there has been no experimental implementation. Here, we demonstrate topological pumping in a Floquet-Bloch band using a plain sinusoidal lattice potential and two-tone driving with frequencies $ω$ and $2ω$. We adiabatically prepare a near-insulating Floquet band of ultracold fermions via a frequency chirp, which avoids gap closings en route from trivial to topological bands. Subsequently, we induce topological pumping by slowly cycling the amplitude and the phase of the $2 ω$ drive. Our system is well described by an effective Shockley model, establishing a novel paradigm to engineer topological matter from simple underlying lattice geometries. This approach could enable the application of quantised pumping in metrology, following recent experimental advances on two-frequency driving in real materials.
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Submitted 8 November, 2022; v1 submitted 23 December, 2021;
originally announced December 2021.
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Floquet engineering of individual band gaps in an optical lattice using a two-tone drive
Authors:
Kilian Sandholzer,
Anne-Sophie Walter,
Joaquín Minguzzi,
Zijie Zhu,
Konrad Viebahn,
Tilman Esslinger
Abstract:
The dynamic engineering of band structures for ultracold atoms in optical lattices represents an innovative approach to understand and explore the fundamental principles of topological matter. In particular, the folded Floquet spectrum determines the associated band topology via band inversion. We experimentally and theoretically study two-frequency phase modulation to asymmetrically hybridize the…
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The dynamic engineering of band structures for ultracold atoms in optical lattices represents an innovative approach to understand and explore the fundamental principles of topological matter. In particular, the folded Floquet spectrum determines the associated band topology via band inversion. We experimentally and theoretically study two-frequency phase modulation to asymmetrically hybridize the lowest two bands of a one-dimensional lattice. Using quasi-degenerate perturbation theory in the extended Floquet space we derive an effective two-band model that quantitatively describes our setting. The energy gaps are experimentally probed via Landau-Zener transitions between Floquet-Bloch bands using an accelerated Bose-Einstein condensate. Separate and simultaneous control over the closing and reopening of these band gaps is demonstrated. We find good agreement between experiment and theory, establishing an analytic description for resonant Floquet-Bloch engineering that includes single- and multi-photon couplings, as well as interference effects between several commensurate drives.
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Submitted 21 December, 2021; v1 submitted 15 October, 2021;
originally announced October 2021.
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In situ investigation of conducting interface formation in LaAlO3/SrTiO3 heterostructure
Authors:
Hyang Keun Yoo,
Luca Moreschini,
Aaron Bostwick,
Andrew L. Walter,
Tae Won Noh,
Eli Rotenberg,
Young Jun Chang
Abstract:
The high-mobility conducting interface (CI) between LaAlO_{3}(LAO) and SrTiO_{3}(STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been conclusively explained. Here, using in situ angle-resolved photoemission spectroscopy, we elucidated the mechanisms for the CI formation. In as-grown samples, we observed…
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The high-mobility conducting interface (CI) between LaAlO_{3}(LAO) and SrTiO_{3}(STO) has revealed many fascinating phenomena, including exotic magnetism and superconductivity. But, the formation mechanism of the CI has not been conclusively explained. Here, using in situ angle-resolved photoemission spectroscopy, we elucidated the mechanisms for the CI formation. In as-grown samples, we observed a built-in potential (V_{bi}) proportional to the polar LAO thickness starting from the first unit cell (UC) with CI formation appearing above 3 UCs. However, we found that the V bi is removed by synchrotron ultraviolet (UV)-irradiation; The built-in potential is recovered by oxygen gas (O_{2}(g))-exposure. Furthermore, after UV-irradiation, the CI appears even below 3UC of LAO. Our results demonstrate not only the V_{bi}-driven CI formation in asgrown LAO/STO, but also a new route to control of the interface state by UV lithographic patterning or other surface modification.
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Submitted 12 May, 2021;
originally announced May 2021.
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Enhanced tunability of two-dimensional electron gas on SrTiO3 through heterostructuring
Authors:
Hyang Keun Yoo,
Luca Moreschini,
Andrew L. Walter,
Aaron Bostwick,
Karsten Horn,
Eli Rotenberg,
Young Jun Chang
Abstract:
Two-dimensional electron gases (2DEGs) on the SrTiO3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. We report that the tunability of the 2DEG-carrier density is significantly enhanced by adding a monolayer LaTiO3 (LTO) onto the STO. Ultraviolet (UV) irradiation induced maximum carrier density of the…
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Two-dimensional electron gases (2DEGs) on the SrTiO3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. We report that the tunability of the 2DEG-carrier density is significantly enhanced by adding a monolayer LaTiO3 (LTO) onto the STO. Ultraviolet (UV) irradiation induced maximum carrier density of the 2DEG in LTO/STO is increased by a factor of ~4 times, compared to that of the bare STO. By oxygen gas exposure, it becomes 10 times smaller than that of the bare STO. This enhanced tunability is attributed to the drastic surface property change of a polar LTO layer by UV irradiation and O2 exposure. This indicates that the 2DEG controllability in LTO/STO is more reliable than that on the bare STO driven by defects, such an oxygen vacancy.
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Submitted 12 May, 2021;
originally announced May 2021.
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Towards unification of perovskite stability and photovoltaic performance assessment
Authors:
Bernard Wenger,
Henry J. Snaith,
Isabel H. Sörensen,
Johannes Ripperger,
Samrana Kazim,
Shahzada Ahmad,
Edgar R. Nandayapa,
Christine Boeffel,
Silvia Colodrero,
Miguel Anaya,
Samuel D. Stranks,
Iván Mora-Seró,
Terry Chien-Jen Yang,
Matthias Bräuninger,
Thorsten Rissom,
Tom Aernouts,
Maria Hadjipanayi,
Vasiliki Paraskeva,
George E. Georghiou,
Alison B. Walker,
Arnaud Walter,
Sylvain Nicolay
Abstract:
With the rapid progress of perovskite photovoltaics (PV), further challenges arise to meet meet the minimum standards required for commercial deployment. Along with the push towards higher efficiencies, we identify a need to improve the quality and uniformity of reported research data and to focus efforts upon understanding and overcoming failures during operation. In this perspective, as a large…
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With the rapid progress of perovskite photovoltaics (PV), further challenges arise to meet meet the minimum standards required for commercial deployment. Along with the push towards higher efficiencies, we identify a need to improve the quality and uniformity of reported research data and to focus efforts upon understanding and overcoming failures during operation. In this perspective, as a large and representative consortium of researchers active in this field, we discuss which methods require special attention and issue a series of recommendations to improve research practices and reporting.
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Submitted 27 April, 2020; v1 submitted 24 April, 2020;
originally announced April 2020.
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Suppressing dissipation in a Floquet-Hubbard system
Authors:
Konrad Viebahn,
Joaquìn Minguzzi,
Kilian Sandholzer,
Anne-Sophie Walter,
Frederik Görg,
Tilman Esslinger
Abstract:
The concept of `Floquet engineering' relies on an external periodic drive to realise novel, effectively static Hamiltonians. This technique is being explored in experimental platforms across physics, including ultracold atoms, laser-driven electron systems, nuclear magnetic resonance, and trapped ions. The key challenge in Floquet engineering is to avoid the uncontrolled absorption of photons from…
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The concept of `Floquet engineering' relies on an external periodic drive to realise novel, effectively static Hamiltonians. This technique is being explored in experimental platforms across physics, including ultracold atoms, laser-driven electron systems, nuclear magnetic resonance, and trapped ions. The key challenge in Floquet engineering is to avoid the uncontrolled absorption of photons from the drive, especially in interacting systems in which the excitation spectrum becomes effectively dense. The resulting dissipative coupling to higher-lying modes, such as the excited bands of an optical lattice, has been explored in recent experimental and theoretical works, but the demonstration of a broadly applicable method to mitigate this effect is lacking. Here, we show how two-path quantum interference, applied to strongly-correlated fermions in a driven optical lattice, suppresses dissipative coupling to higher bands and increases the lifetime of double occupancies and spin-correlations by two to three orders of magnitude. Interference is achieved by introducing a weak second modulation at twice the fundamental driving frequency with a definite relative phase. This technique is shown to suppress dissipation in both weakly and strongly interacting regimes of a driven Hubbard system, opening an avenue to realising low-temperature phases of matter in interacting Floquet systems.
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Submitted 12 March, 2020;
originally announced March 2020.
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Highly Multiplexible Thermal Kinetic Inductance Detectors for X-Ray Imaging Spectroscopy
Authors:
Gerhard Ulbricht,
Benjamin A. Mazin,
Paul Szypryt,
Alex B. Walter,
Clint Bockstiegel,
Bruce Bumble
Abstract:
For X-ray imaging spectroscopy, high spatial resolution over a large field of view is often as important as high energy resolution, but current X-ray detectors do not provide both in the same device. Thermal Kinetic Inductance Detectors (TKIDs) are being developed as they offer a feasible way to combine the energy resolution of transition edge sensors with pixel counts approaching CCDs and thus pr…
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For X-ray imaging spectroscopy, high spatial resolution over a large field of view is often as important as high energy resolution, but current X-ray detectors do not provide both in the same device. Thermal Kinetic Inductance Detectors (TKIDs) are being developed as they offer a feasible way to combine the energy resolution of transition edge sensors with pixel counts approaching CCDs and thus promise significant improvements for many X-ray spectroscopy applications. TKIDs are a variation of Microwave Kinetic Inductance Detectors (MKIDs) and share their multiplexibility: working MKID arrays with 2024 pixels have recently been demonstrated and much bigger arrays are under development. In this work, we present our first working TKID prototypes which are able to achieve an energy resolution of 75 eV at 5.9 keV, even though their general design still has to be optimized. We further describe TKID fabrication, characterization, multiplexing and working principle and demonstrate the necessity of a data fitting algorithm in order to extract photon energies. With further design optimizations we expect to be able to improve our TKID energy resolution to less than 10 eV at 5.9 keV.
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Submitted 24 June, 2015;
originally announced June 2015.
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The Role of Transport Agents in MoS2 Single Crystals
Authors:
Andrea Pisoni,
Jacim Jacimovic,
Osor S. Barišić,
Arnaud Walter,
Bálint Náfrádi,
Phillipe Bugnon,
Arnaud Magrez,
Helmuth Berger,
Zsolt Revay,
László Forró
Abstract:
We report resistivity, thermoelectric power and thermal conductivity of MoS2 single crystals prepared by chemical vapour transport (CVT) method using I2, Br2 and TeCl4 as transport agents. The material presents low-lying donor and acceptor levels, which dominate the in-plane charge transport. Intercalates into the Van der Waals gap strongly influence the inter-plane resistivity. Thermoelectric pow…
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We report resistivity, thermoelectric power and thermal conductivity of MoS2 single crystals prepared by chemical vapour transport (CVT) method using I2, Br2 and TeCl4 as transport agents. The material presents low-lying donor and acceptor levels, which dominate the in-plane charge transport. Intercalates into the Van der Waals gap strongly influence the inter-plane resistivity. Thermoelectric power displays the characteristics of strong electron-phonon interaction. Detailed theoretical model of thermal conductivity reveals the presence of high number of defects in the MoS2 structure. We show that these defects are inherent to CVT growth method, coming mostly from the transport agent molecules inclusion as identified by Total Reflection X-ray Fluorescence analysis (TXRF) and in-beam activation analysis (IBAA).
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Submitted 18 February, 2015;
originally announced February 2015.
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Electronic Instability in a Zero-Gap Semiconductor: the Charge-Density Wave in (TaSe4)2I
Authors:
C. Tournier-Colletta,
L. Moreschini,
G. Autès,
S. Moser,
A. Crepaldi,
H. Berger,
A. L. Walter,
K. S. Kim,
A. Bostwick,
P. Monceau,
E. Rotenberg,
O. V. Yazyev,
M. Grioni
Abstract:
We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the non-distorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the CDW formation b…
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We report a comprehensive study of the paradigmatic quasi-1D compound (TaSe4)2I performed by means of angle-resolved photoemission spectroscopy (ARPES) and first-principles electronic structure calculations. We find it to be a zero-gap semiconductor in the non-distorted structure, with non-negligible interchain coupling. Theory and experiment support a Peierls-like scenario for the CDW formation below T_CDW = 263 K, where the incommensurability is a direct consequence of the finite interchain coupling. The formation of small polarons, strongly suggested by the ARPES data, explains the puzzling semiconductor-to-semiconductor transition observed in transport at T_CDW.
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Submitted 22 March, 2013;
originally announced March 2013.
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Visualizing Atomic-Scale Negative Differential Resistance in Bilayer Graphene
Authors:
Keun Su Kim,
Tae-Hwan Kim,
Andrew L. Walter,
Thomas Seyller,
Han Woong Yeom,
Eli Rotenberg,
Aaron Bostwick
Abstract:
We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singulari…
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We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance (NDR) at the Dirac energy, which spatially varies within the single unit cell of bilayer graphene. The origin of NDR is explained by two near-gap van Hove singularities emerging in the electronic spectrum of bilayer graphene under a transverse electric field, which are strongly localized on two sublattices in different layers. Furthermore, defects near the tunneling contact are found to strongly impact on NDR through the electron interference. Our result provides an atomic-level understanding of quantum tunneling in bilayer graphene, and constitutes a useful step towards graphene-based tunneling devices.
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Submitted 2 January, 2013;
originally announced January 2013.
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Small scale rotational disorder observed in epitaxial graphene on SiC(0001)
Authors:
Andrew L. Walter,
Aaron Bostwick,
Florian Speck,
Markus Ostler,
Keun Su Kim,
Young Jun Chang,
Luca Moreschini,
Davide Innocenti,
Thomas Seyller,
Karsten Horn,
Eli Rotenberg
Abstract:
Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by angle-resolved photoelectron spectroscopy (ARPES). Indeed, ARPES has been performed on graphene grown on metal substrates but electronic applications require an insulat…
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Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by angle-resolved photoelectron spectroscopy (ARPES). Indeed, ARPES has been performed on graphene grown on metal substrates but electronic applications require an insulating substrate. Epitaxial graphene grown by the thermal decomposition of silicon carbide (SiC) is an ideal candidate for this due to the large scale, uniform graphene layers produced. The experimental spectral function of epitaxial graphene on SiC has been extensively studied. However, until now the cause of an anisotropy in the spectral width of the Fermi surface has not been determined. In the current work we show, by comparison of the spectral function to a semi-empirical model, that the anisotropy is due to small scale rotational disorder ($\sim\pm$ 0.15$^{\circ}$) of graphene domains in graphene grown on SiC(0001) samples. In addition to the direct benefit in the understanding of graphene's electronic structure this work suggests a mechanism to explain similar variations in related ARPES data.
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Submitted 21 September, 2012;
originally announced September 2012.
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Intrinsic Terahertz Plasmons and Magnetoplasmons in Large Scale Monolayer Graphene
Authors:
I. Crassee,
M. Orlita,
M. Potemski,
A. L. Walter,
M. Ostler,
Th. Seyller,
I. Gaponenko,
J. Chen,
A. B. Kuzmenko
Abstract:
We show that in graphene epitaxially grown on SiC the Drude absorption is transformed into a strong terahertz plasmonic peak due to natural nanoscale inhomogeneities, such as substrate terraces and wrinkles. The excitation of the plasmon modifies dramatically the magneto-optical response and in particular the Faraday rotation. This makes graphene a unique playground for plasmon-controlled magneto-…
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We show that in graphene epitaxially grown on SiC the Drude absorption is transformed into a strong terahertz plasmonic peak due to natural nanoscale inhomogeneities, such as substrate terraces and wrinkles. The excitation of the plasmon modifies dramatically the magneto-optical response and in particular the Faraday rotation. This makes graphene a unique playground for plasmon-controlled magneto-optical phenomena thanks to a cyclotron mass 2 orders of magnitude smaller than in conventional plasmonic materials such as noble metals.
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Submitted 26 April, 2012; v1 submitted 19 April, 2012;
originally announced April 2012.
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Extraordinary epitaxial alignment of graphene islands on Au(111)
Authors:
Joseph M. Wofford,
Elena Starodub,
Andrew L. Walter,
Shu Nie,
Aaron Bostwick,
Norman C. Bartelt,
Konrad Thürmer,
Eli Rotenberg,
Kevin F. McCarty,
Oscar D. Dubon
Abstract:
Pristine, single-crystalline graphene displays a unique collection of remarkable electronic properties that arise from its two-dimensional, honeycomb structure. Using in-situ low-energy electron microscopy, we show that when deposited on the (111) surface of Au carbon forms such a structure. The resulting monolayer, epitaxial film is formed by the coalescence of dendritic graphene islands that nuc…
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Pristine, single-crystalline graphene displays a unique collection of remarkable electronic properties that arise from its two-dimensional, honeycomb structure. Using in-situ low-energy electron microscopy, we show that when deposited on the (111) surface of Au carbon forms such a structure. The resulting monolayer, epitaxial film is formed by the coalescence of dendritic graphene islands that nucleate at a high density. Over 95% of these islands can be identically aligned with respect to each other and to the Au substrate. Remarkably, the dominant island orientation is not the better lattice-matched 30^{\circ} rotated orientation but instead one in which the graphene [01] and Au [011] in-plane directions are parallel. The epitaxial graphene film is only weakly coupled to the Au surface, which maintains its reconstruction under the slightly p-type doped graphene. The linear electronic dispersion characteristic of free-standing graphene is retained regardless of orientation. That a weakly interacting, non-lattice matched substrate is able to lock graphene into a particular orientation is surprising. This ability, however, makes Au(111) a promising substrate for the growth of single crystalline graphene films.
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Submitted 4 May, 2012; v1 submitted 2 February, 2012;
originally announced February 2012.
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Electronic structure of graphene on single crystal copper substrates
Authors:
Andrew L. Walter,
Shu Nie,
Aaron Bostwick,
Keun Su Kim,
Luca Moreschini,
Young Jun Chang,
Davide Innocenti,
Karsten Horn,
Kevin F. McCarty,
Eli Rotenberg
Abstract:
The electronic structure of graphene on Cu(111) and Cu(100) single crystals is investigated using low energy electron microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy. On both substrates the graphene is rotationally disordered and interactions between the graphene and substrate lead to a shift in the Dirac crossing of $\sim$ -0.3 eV and the opening of a…
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The electronic structure of graphene on Cu(111) and Cu(100) single crystals is investigated using low energy electron microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy. On both substrates the graphene is rotationally disordered and interactions between the graphene and substrate lead to a shift in the Dirac crossing of $\sim$ -0.3 eV and the opening of a $\sim$ 250 meV gap. Exposure of the samples to air resulted in intercalation of oxygen under the graphene on Cu(100), which formed a ($\sqrt{2} \times 2\sqrt{2}$)R45$^{\rm o}$ superstructure. The effect of this intercalation on the graphene $π$ bands is to increase the offset of the Dirac crossing ($\sim$ -0.6 eV) and enlarge the gap ($\sim$ 350 meV). No such effect is observed for the graphene on Cu(111) sample, with the surface state at $Γ$ not showing the gap associated with a surface superstructure. The graphene film is found to protect the surface state from air exposure, with no change in the effective mass observed.
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Submitted 9 August, 2011;
originally announced August 2011.
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Effective screening and the plasmaron bands in Graphene
Authors:
Andrew L. Walter,
Aaron Bostwick,
Ki-Joon Jeon,
Florian Speck,
Markus Ostler,
Thomas Seyller,
Luca Moreschini,
Young Jun Chang,
Marco Polini,
Reza Asgari,
Allan H. MacDonald,
Karsten Horn,
Eli Rotenberg
Abstract:
Electron-plasmon coupling in graphene has recently been shown to give rise to a "plasmaron" quasiparticle excitation. The strength of this coupling has been predicted to depend on the effective screening, which in turn is expected to depend on the dielectric environment of the graphene sheet. Here we compare the strength of enviromental screening for graphene on four different substrates by evalua…
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Electron-plasmon coupling in graphene has recently been shown to give rise to a "plasmaron" quasiparticle excitation. The strength of this coupling has been predicted to depend on the effective screening, which in turn is expected to depend on the dielectric environment of the graphene sheet. Here we compare the strength of enviromental screening for graphene on four different substrates by evaluating the separation of the plasmaron bands from the hole bands using Angle Resolved PhotoEmission Spectroscopy. Comparison with G0W-RPA predictions are used to determine the effective dielectric constant of the underlying substrate layer. We also show that plasmaron and electronic properties of graphene can be independently manipulated, an important aspect of a possible use in "plasmaronic" devices.
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Submitted 21 July, 2011;
originally announced July 2011.
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Multi-component magneto-optical conductivity of multilayer graphene on SiC
Authors:
I. Crassee,
J. Levallois,
D. van der Marel,
A. L. Walter,
Th. Seyller,
A. B. Kuzmenko
Abstract:
Far-infrared diagonal and Hall conductivities of multilayer epitaxial graphene on the C-face of SiC were measured using magneto-optical absorption and Faraday rotation in magnetic fields up to 7 T and temperatures between 5 and 300 K. Multiple components are identified in the spectra, which include: (i) a quasi-classical cyclotron resonance (CR), originating from the highly doped graphene layer cl…
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Far-infrared diagonal and Hall conductivities of multilayer epitaxial graphene on the C-face of SiC were measured using magneto-optical absorption and Faraday rotation in magnetic fields up to 7 T and temperatures between 5 and 300 K. Multiple components are identified in the spectra, which include: (i) a quasi-classical cyclotron resonance (CR), originating from the highly doped graphene layer closest to SiC, (ii) transitions between low-index Landau levels (LLs), which stem from weakly doped layers and (iii) a broad optical absorption background. Electron and hole type LL transitions are optically distinguished and shown to coexist. An electron-hole asymmetry of the Fermi velocity of about 2% was found within one graphene layer, while the Fermi velocity varies by about 10% across the layers. The optical intensity of the LL transitions is several times smaller than what is theoretically expected for isolated graphene monolayers without electron-electron and electron-phonon interactions.
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Submitted 24 May, 2011;
originally announced May 2011.
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Highly p-doped graphene obtained by fluorine intercalation
Authors:
Andrew L. Walter,
Ki-Joon Jeon,
Aaron Bostwick,
Florian Speck,
Markus Ostler,
Thomas Seyller,
Luca Moreschini,
Yong Su Kim,
Young Jun Chang,
Karsten Horn,
Eli Rotenberg
Abstract:
We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi l…
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We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED .
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Submitted 14 April, 2011;
originally announced April 2011.
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Giant Faraday rotation in single- and multilayer graphene
Authors:
Iris Crassee,
Julien Levallois,
Andrew L. Walter,
Markus Ostler,
Aaron Bostwick,
Eli Rotenberg,
Thomas Seyller,
Dirk van der Marel,
Alexey B. Kuzmenko
Abstract:
Optical Faraday rotation is one of the most direct and practically important manifestations of magnetically broken time-reversal symmetry. The rotation angle is proportional to the distance traveled by the light, and up to now sizeable effects were observed only in macroscopically thick samples and in two-dimensional electron gases with effective thicknesses of several nanometers. Here we demonstr…
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Optical Faraday rotation is one of the most direct and practically important manifestations of magnetically broken time-reversal symmetry. The rotation angle is proportional to the distance traveled by the light, and up to now sizeable effects were observed only in macroscopically thick samples and in two-dimensional electron gases with effective thicknesses of several nanometers. Here we demonstrate that a single atomic layer of carbon - graphene - turns the polarization by several degrees in modest magnetic fields. The rotation is found to be strongly enhanced by resonances originating from the cyclotron effect in the classical regime and the inter-Landau-level transitions in the quantum regime. Combined with the possibility of ambipolar doping, this opens pathways to use graphene in fast tunable ultrathin infrared magneto-optical devices.
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Submitted 29 July, 2010;
originally announced July 2010.