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Defects, band bending and ionization rings in MoS2
Authors:
Iolanda Di Bernardo,
James Blyth,
Liam Watson,
Kaijian Xing,
Yi-Hsun Chen,
Shao-Yu Chen,
Mark T. Edmonds,
Michael S. Fuhrer
Abstract:
Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS2 however is still controversial, with discrepancies in the literature pertaining to the origin of the in-gap features observed via scanning tunneling spectroscopy (STS) on single sulphur vacancies. Here we use a comb…
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Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS2 however is still controversial, with discrepancies in the literature pertaining to the origin of the in-gap features observed via scanning tunneling spectroscopy (STS) on single sulphur vacancies. Here we use a combination of scanning tunnelling microscopy (STM) and STS to study embedded sulphur vacancies in bulk MoS2 crystals. We observe spectroscopic features dispersing in real space and in energy, which we interpret as tip position- and bias-dependent ionization of the sulphur vacancy donor due to tip induced band bending (TIBB). The observations indicate that care must be taken in interpreting defect spectra as reflecting in-gap density of states, and may explain discrepancies in the literature.
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Submitted 18 July, 2023;
originally announced July 2023.
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Imaging the breakdown and restoration of topological protection in magnetic topological insulator MnBi$_2$Te$_4$
Authors:
Qile Li,
Iolanda Di Bernardo,
Johnathon Maniatis,
Daniel McEwen,
Liam Watson,
Benjamin Lowe,
Thi-Hai-Yen Vu,
Chi Xuan Trang,
Jinwoong Hwang,
Sung-Kwan Mo,
Michael S. Fuhrer,
Mark T. Edmonds
Abstract:
Quantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral one-dimensional edge states. Yet, in magnetic topological insulators (MTI) to date, topological protection is far from robust, with the zero-magnetic field QAH effect only realised at temperatures an order of magnitude below the Néel temperature TN, though small magnetic fields can stab…
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Quantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral one-dimensional edge states. Yet, in magnetic topological insulators (MTI) to date, topological protection is far from robust, with the zero-magnetic field QAH effect only realised at temperatures an order of magnitude below the Néel temperature TN, though small magnetic fields can stabilize QAH effect. Understanding why topological protection breaks down is therefore essential to realising QAH effect at higher temperatures. Here we use a scanning tunnelling microscope to directly map the size of the exchange gap (Eg,ex) and its spatial fluctuation in the QAH insulator 5-layer MnBi$_2$Te$_4$. We observe long-range fluctuations of Eg,ex with values ranging between 0 (gapless) and 70 meV, uncorrelated to individual point defects. We directly image the breakdown of topological protection, showing that the chiral edge state, the hallmark signature of a QAH insulator, hybridizes with extended gapless metallic regions in the bulk. Finally, we unambiguously demonstrate that the gapless regions originate in magnetic disorder, by demonstrating that a small magnetic field restores Eg,ex in these regions, explaining the recovery of topological protection in magnetic fields. Our results indicate that overcoming magnetic disorder is key to exploiting the unique properties of QAH insulators.
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Submitted 16 January, 2023;
originally announced January 2023.
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Moiré Engineering in 2D Heterostructures with Process-Induced Strain
Authors:
Tara Peña,
Aditya Dey,
Shoieb A. Chowdhury,
Ahmad Azizimanesh,
Wenhui Hou,
Arfan Sewaket,
Carla L. Watson,
Hesam Askari,
Stephen M. Wu
Abstract:
We report deterministic control over moiré superlattice interference pattern in twisted bilayer graphene by implementing designable device-level heterostrain with process-induced strain engineering, a widely used technique in industrial silicon nanofabrication processes. By depositing stressed thin films onto our twisted bilayer graphene samples, heterostrain magnitude and strain directionality ca…
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We report deterministic control over moiré superlattice interference pattern in twisted bilayer graphene by implementing designable device-level heterostrain with process-induced strain engineering, a widely used technique in industrial silicon nanofabrication processes. By depositing stressed thin films onto our twisted bilayer graphene samples, heterostrain magnitude and strain directionality can be controlled by stressor film force (film stress x film thickness) and patterned stressor geometry, respectively. We examine strain and moiré interference with Raman spectroscopy through in-plane and moiré-activated phonon mode shifts. Results support systematic C$_{3}$ rotational symmetry breaking and tunable periodicity in moiré superlattices under the application of uniaxial or biaxial heterostrain. Experimental results are validated by molecular statics simulations and density functional theory based first principles calculations. This provides a method to not only tune moiré interference without additional twisting, but also allows for a systematic pathway to explore different van der Waals based moiré superlattice symmetries by deterministic design.
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Submitted 3 April, 2023; v1 submitted 7 October, 2022;
originally announced October 2022.
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Directed self-assembly of spherical caps via confinement
Authors:
Carlos Avendano,
Chekesha M. Liddell Watson,
Fernando A. Escobedo
Abstract:
In this work we use Monte Carlo simulations to study the phase behavior of spherical caps confined between two parallel hard walls separated by a distance H. The particle model consists of a hard sphere of diameter σcut off by a plane at a height χ, and it is loosely based on mushroom cap-shaped particles whose phase behavior was recently studied experimentally [E. K. Riley and C. M. Liddell, Lang…
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In this work we use Monte Carlo simulations to study the phase behavior of spherical caps confined between two parallel hard walls separated by a distance H. The particle model consists of a hard sphere of diameter σcut off by a plane at a height χ, and it is loosely based on mushroom cap-shaped particles whose phase behavior was recently studied experimentally [E. K. Riley and C. M. Liddell, Langmuir, 26, 11648 (2010)]. The geometry of the particles is characterized by the reduced height χ^* = χ/σ, such that the model extrapolates between hard spheres for χ^* \leftarrow 1 and infinitely thin hard platelets for χ^* \letfarrow 0. Three different particle shapes are investigated: (a) three-quarter height spherical caps (χ^* = 3/4), (b) one-half height spherical caps or hemispheres (χ^* = 1/2), and (c) one-quarter height spherical caps (χ^* = 1/4). These three models are used to rationalize the effect of particle shape, obtained by cutting off spheres at different heights, on the entropy-driven self-assembly of the particles under strong confinements; i.e., for 1 < H/χ< 2.5. As H is varied, a sequence of crystal structures are observed, including some having similar symmetry as that of the structures observed in confined hard spheres on account of the remaining spherical surface in the particles, but with additional features on account of the particle shapes having intrinsic anisotropy and orientational degrees of freedom. The χ^* = 3/4 system is found to exhibit a phase diagram that is most similar to the one obtained experimentally for the confined mushroom cap-shaped colloidal particles under. A qualitative global phase diagram is constructed that helps reveal the interrelations among different phases for all the particle shapes and confinements studied.
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Submitted 2 April, 2013;
originally announced April 2013.
