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Exceptional points in nonlinear and stochastic dynamics
Authors:
Cheyne Weis,
Michel Fruchart,
Ryo Hanai,
Kyle Kawagoe,
Peter B. Littlewood,
Vincenzo Vitelli
Abstract:
We study a class of bifurcations generically occurring in dynamical systems with non-mutual couplings ranging from models of coupled neurons to predator-prey systems and non-linear oscillators. In these bifurcations, extended attractors such as limit cycles, limit tori, and strange attractors merge and split in a similar way as fixed points in a pitchfork bifurcation. We show that this merging and…
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We study a class of bifurcations generically occurring in dynamical systems with non-mutual couplings ranging from models of coupled neurons to predator-prey systems and non-linear oscillators. In these bifurcations, extended attractors such as limit cycles, limit tori, and strange attractors merge and split in a similar way as fixed points in a pitchfork bifurcation. We show that this merging and splitting coincides with the coalescence of covariant Lyapunov vectors with vanishing Lyapunov exponents, generalizing the notion of exceptional points to non-linear dynamical systems. We distinguish two classes of bifurcations, corresponding respectively to continuous and discontinuous behaviors of the covariant Lyapunov vectors at the transition. We outline some physical consequences of generalized exceptional points on the dynamics of the system, including non-reciprocal responses, the destruction of isochrons, and enhanced sensitivity to noise. We illustrate our results with concrete examples from neuroscience, ecology, and physics. When applied to interpret existing experimental observations, our analysis suggests a simple explanation for the non-trivial phase delays observed in the population dynamics of plankton communities and the recently measured statistics of rotation reversals for a solid body immersed in a Rayleigh-Bénard convection cell.
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Submitted 9 August, 2023; v1 submitted 24 July, 2022;
originally announced July 2022.
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Temperature dependence of the hydrogen bond network in Trimethylamine N-oxide and guanidine hydrochloride - water solutions
Authors:
Felix Lehmkühler,
Yury Forov,
Mirko Elbers,
Ingo Steinke,
Christoph J. Sahle,
Christopher Weis,
Naruki Tsuji,
Masayoshi Itou,
Yoshiharu Sakurai,
Christian Sternemann
Abstract:
We present an X-ray Compton scattering study on aqueous Trimethylamine N-oxide (TMAO) and guanidine hydrochloride solutions (GdnHCl) as a function of temperature. Independent from the concentration of the solvent, Compton profiles almost resemble results for liquid water as a function of temperature. However, The number of hydrogen bonds per water molecule extracted from the Compton profiles sugge…
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We present an X-ray Compton scattering study on aqueous Trimethylamine N-oxide (TMAO) and guanidine hydrochloride solutions (GdnHCl) as a function of temperature. Independent from the concentration of the solvent, Compton profiles almost resemble results for liquid water as a function of temperature. However, The number of hydrogen bonds per water molecule extracted from the Compton profiles suggests a decrease of hydrogen bonds with rising temperatures for all studied samples, the differences between water and the solutions are weak. Nevertheless, the data indicate a reduced bond weakening with rising TMAO concentration up to 5M of 7.2% compared to 8 % for pure water. In contrast, the addition of GdnHCl appears to behave differently for concentrations up to 3.1 M with a weaker impact on the temperature response of the hydrogen bond structure.
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Submitted 17 October, 2017;
originally announced October 2017.
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Simulation strategies for the massless lattice Schwinger model in the dual formulation
Authors:
Daniel Göschl,
Christof Gattringer,
Alexander Lehmann,
Christoph Weis
Abstract:
The dual form of the massless Schwinger model on the lattice overcomes the complex action problems from two sources: a topological term, as well as non-zero chemical potential, making these physically interesting cases accessible to Monte Carlo simulations. The partition function is represented as a sum over fermion loops, dimers and plaquette-surfaces such that all contributions are real and posi…
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The dual form of the massless Schwinger model on the lattice overcomes the complex action problems from two sources: a topological term, as well as non-zero chemical potential, making these physically interesting cases accessible to Monte Carlo simulations. The partition function is represented as a sum over fermion loops, dimers and plaquette-surfaces such that all contributions are real and positive. However, these new variables constitute a highly constrained system and suitable update strategies have to be developed. In this exploratory study we present an approach based on locally growing plaquette-surfaces surrounded by fermion loop segments combined with a worm based strategy for updating chains of dimers, as well as winding fermion loops. The update strategy is checked with conventional simulations as well as reference data from exact summation on small volumes and we discuss some physical implications of the results.
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Submitted 2 August, 2017;
originally announced August 2017.
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Spin Coherence and $^{14}$N ESEEM Effects of Nitrogen-Vacancy Centers in Diamond with X-band Pulsed ESR
Authors:
B. C. Rose,
C. D. Weis,
A. M. Tyryshkin,
T. Schenkel,
S. A. Lyon
Abstract:
Pulsed ESR experiments are reported for ensembles of negatively-charged nitrogen-vacancy centers (NV$^-$) in diamonds at X-band magnetic fields (280-400 mT) and low temperatures (2-70 K). The NV$^-$ centers in synthetic type IIb diamonds (nitrogen impurity concentration $<1$~ppm) are prepared with bulk concentrations of $2\cdot 10^{13}$ cm$^{-3}$ to $4\cdot 10^{14}$ cm$^{-3}$ by high-energy electr…
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Pulsed ESR experiments are reported for ensembles of negatively-charged nitrogen-vacancy centers (NV$^-$) in diamonds at X-band magnetic fields (280-400 mT) and low temperatures (2-70 K). The NV$^-$ centers in synthetic type IIb diamonds (nitrogen impurity concentration $<1$~ppm) are prepared with bulk concentrations of $2\cdot 10^{13}$ cm$^{-3}$ to $4\cdot 10^{14}$ cm$^{-3}$ by high-energy electron irradiation and subsequent annealing. We find that a proper post-radiation anneal (1000$^\circ$C for 60 mins) is critically important to repair the radiation damage and to recover long electron spin coherence times for NV$^-$s. After the annealing, spin coherence times of T$_2 = 0.74$~ms at 5~K are achieved, being only limited by $^{13}$C nuclear spectral diffusion in natural abundance diamonds. At X-band magnetic fields, strong electron spin echo envelope modulation (ESEEM) is observed originating from the central $^{14}$N nucleus. The ESEEM spectral analysis allows for accurate determination of the $^{14}$N nuclear hypefine and quadrupole tensors. In addition, the ESEEM effects from two proximal $^{13}$C sites (second-nearest neighbor and fourth-nearest neighbor) are resolved and the respective $^{13}$C hyperfine coupling constants are extracted.
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Submitted 13 March, 2016;
originally announced March 2016.
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Reaching the quantum limit of sensitivity in electron spin resonance
Authors:
A. Bienfait,
J. J. Pla,
Y. Kubo,
M. Stern,
X. Zhou,
C. C. Lo,
C. D. Weis,
T. Schenkel,
M. L. W. Thewalt,
D. Vion,
D. Esteve,
B. Julsgaard,
K. Moelmer,
J. J. L. Morton,
P. Bertet
Abstract:
We report pulsed electron-spin resonance (ESR) measurements on an ensemble of Bismuth donors in Silicon cooled at 10mK in a dilution refrigerator. Using a Josephson parametric microwave amplifier combined with high-quality factor superconducting micro-resonators cooled at millikelvin temperatures, we improve the state-of-the-art sensitivity of inductive ESR detection by nearly 4 orders of magnitud…
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We report pulsed electron-spin resonance (ESR) measurements on an ensemble of Bismuth donors in Silicon cooled at 10mK in a dilution refrigerator. Using a Josephson parametric microwave amplifier combined with high-quality factor superconducting micro-resonators cooled at millikelvin temperatures, we improve the state-of-the-art sensitivity of inductive ESR detection by nearly 4 orders of magnitude. We demonstrate the detection of 1700 bismuth donor spins in silicon within a single Hahn echo with unit signal-to-noise (SNR) ratio, reduced to just 150 spins by averaging a single Carr-Purcell-Meiboom-Gill sequence. This unprecedented sensitivity reaches the limit set by quantum fluctuations of the electromagnetic field instead of thermal or technical noise, which constitutes a novel regime for magnetic resonance.
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Submitted 24 July, 2015;
originally announced July 2015.
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Element-resolved thermodynamics of magnetocaloric LaFe$_{13-x}$Si$_x$
Authors:
M. E. Gruner,
W. Keune,
B. Roldan Cuenya,
C. Weis,
J. Landers,
S. I. Makarov,
D. Klar,
M. Y. Hu,
E. E. Alp,
J. Zhao,
M. Krautz,
O. Gutfleisch,
H. Wende
Abstract:
By combination of two independent approaches, nuclear resonant inelastic X-ray scattering and first-principles calculations in the framework of density functional theory, we determine the element-resolved vibrational density of states in the ferromagnetic low temperature and paramagnetic high temperature phase of LaFe$_{13-x}$Si$_x$. This allows us to derive the lattice and electronic contribution…
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By combination of two independent approaches, nuclear resonant inelastic X-ray scattering and first-principles calculations in the framework of density functional theory, we determine the element-resolved vibrational density of states in the ferromagnetic low temperature and paramagnetic high temperature phase of LaFe$_{13-x}$Si$_x$. This allows us to derive the lattice and electronic contribution to the entropy change at the first-order phase transformation, which are both of considerable magnitude. The change in lattice entropy is dominated by magneto-elastic softening, which originates from the itinerant electron metamagnetism associated with Fe. This counteracts the large volume change at the transition and leads to an unexpected, cooperative behavior of magnetic, vibrational and electronic entropy change, which is responsible for the large magneto- and barocaloric effect observed for this material.
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Submitted 13 November, 2014; v1 submitted 18 August, 2014;
originally announced August 2014.
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Stark shift and field ionization of arsenic donors in $^{28}$Si-SOI structures
Authors:
C. C. Lo,
S. Simmons,
R. Lo Nardo,
C. D. Weis,
A. M. Tyryshkin,
J. Meijer,
D. Rogalla,
S. A. Lyon,
J. Bokor,
T. Schenkel,
J. J. L. Morton
Abstract:
We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large an…
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We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to $\sim$ 2 V/$μ$m to be applied across the SOI layer. Utilizing this structure we measure the Stark shift parameters of arsenic donors embedded in the $^{28}$Si SOI layer and find a contact hyperfine Stark parameter of $η_a=-1.9\pm0.2\times10^{-3} μ$m$^2$/V$^2$. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.
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Submitted 27 January, 2014;
originally announced January 2014.
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Iron porphyrin molecules on Cu(001): Influence of adlayers and ligands on the magnetic properties
Authors:
H. C. Herper,
M. Bernien,
S. Bhandary,
C. F. Hermanns,
A. Krüger,
J. Miguel,
C. Weis,
C. Schmitz-Antoniak,
B. Krumme,
D. Bovenschen,
C. Tieg,
B. Sanyal,
E. Weschke,
C. Czekelius,
W. Kuch,
H. Wende,
O. Eriksson
Abstract:
The structural and magnetic properties of Fe octaethylporphyrin (OEP) molecules on Cu(001) have been investigated by means of density functional theory (DFT) methods and X-ray absorption spectroscopy. The molecules have been adsorbed on the bare metal surface and on an oxygen-covered surface, which shows a $\sqrt{2}\times2\sqrt{2}R45^{\circ}$ reconstruction. In order to allow for a direct comparis…
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The structural and magnetic properties of Fe octaethylporphyrin (OEP) molecules on Cu(001) have been investigated by means of density functional theory (DFT) methods and X-ray absorption spectroscopy. The molecules have been adsorbed on the bare metal surface and on an oxygen-covered surface, which shows a $\sqrt{2}\times2\sqrt{2}R45^{\circ}$ reconstruction. In order to allow for a direct comparison between magnetic moments obtained from sum-rule analysis and DFT we calculate the dipolar term $7< T_z>$, which is also important in view of the magnetic anisotropy of the molecule. The measured X-ray magnetic circular dichroism shows a strong dependence on the photon incidence angle, which we could relate to a huge value of $7< T_z>$, e.g. on Cu(001) $7< T_z>$ amounts to -2.07\,\mbo{} for normal incidence leading to a reduction of the effective spin moment $m_s + 7< T_z>$. Calculations have also been performed to study the influence of possible ligands such as Cl and O atoms on the magnetic properties of the molecule and the interaction between molecule and surface, because the experimental spectra display a clear dependence on the ligand, which is used to stabilize the molecule in the gas phase. Both types of ligands weaken the hybridization between surface and porphyrin molecule and change the magnetic spin state of the molecule, but the changes in the X-ray absorption are clearly related to residual Cl ligands.
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Submitted 18 February, 2013;
originally announced February 2013.
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Towards pump-probe experiments of defect dynamics with short ion beam pulses
Authors:
T. Schenkel,
S. M. Lidia,
C. D. Weis,
W. L. Waldron,
J. Schwartz,
A. M. Minor,
P. Hosemann,
J. W. Kwan
Abstract:
A novel, induction type linear accelerator, the Neutralized Drift Compression eXperiment (NDCX-II), is currently being commissioned at Berkeley Lab. This accelerator is designed to deliver intense (up to 3x1011 ions/pulse), 0.6 to ~600 ns duration pulses of 0.13 to 1.2 MeV lithium ions at a rate of about 2 pulses per minute onto 1 to 10 mm scale target areas. When focused to mm-diameter spots, the…
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A novel, induction type linear accelerator, the Neutralized Drift Compression eXperiment (NDCX-II), is currently being commissioned at Berkeley Lab. This accelerator is designed to deliver intense (up to 3x1011 ions/pulse), 0.6 to ~600 ns duration pulses of 0.13 to 1.2 MeV lithium ions at a rate of about 2 pulses per minute onto 1 to 10 mm scale target areas. When focused to mm-diameter spots, the beam is predicted to volumetrically heat micrometer thick foils to temperatures of ~30,000 K. At lower beam power densities, the short excitation pulse with tunable intensity and time profile enables pump-probe type studies of defect dynamics in a broad range of materials. We briefly describe the accelerator concept and design, present results from beam pulse shaping experiments and discuss examples of pump-probe type studies of defect dynamics following irradiation of materials with intense, short ion beam pulses from NDCX-II.
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Submitted 23 April, 2013; v1 submitted 27 November, 2012;
originally announced November 2012.
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Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28
Authors:
C. D. Weis,
C. C. Lo,
V. Lang,
A. M. Tyryshkin,
R. E. George,
K. M. Yu,
J. Bokor,
S. A. Lyon,
J. J. L. Morton,
T. Schenkel
Abstract:
We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms…
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We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B_pp=12uT and long spin coherence times T_2=0.7ms, at temperature T=8K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon.
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Submitted 26 February, 2012; v1 submitted 7 February, 2012;
originally announced February 2012.
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A spin quantum bit architecture with coupled donors and quantum dots in silicon
Authors:
T. Schenkel,
C. C. Lo,
C. D. Weis,
J. Bokor,
A. M. Tyryshkin,
S. A. Lyon
Abstract:
Spins of donor electrons and nuclei in silicon are promising quantum bit (qubit) candidates which combine long coherence times with the fabrication finesse of the silicon nanotechnology industry. We outline a potentially scalable spin qubit architecture where donor nuclear and electron spins are coupled to spins of electrons in quantum dots and discuss requirements for donor placement aligned to q…
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Spins of donor electrons and nuclei in silicon are promising quantum bit (qubit) candidates which combine long coherence times with the fabrication finesse of the silicon nanotechnology industry. We outline a potentially scalable spin qubit architecture where donor nuclear and electron spins are coupled to spins of electrons in quantum dots and discuss requirements for donor placement aligned to quantum dots by single ion implantation.
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Submitted 10 October, 2011;
originally announced October 2011.
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Chip-scale nanofabrication of single spins and spin arrays in diamond
Authors:
David M. Toyli,
Christoph D. Weis,
Gregory D. Fuchs,
Thomas Schenkel,
David D. Awschalom
Abstract:
We demonstrate a technique to nanofabricate nitrogen vacancy (NV) centers in diamond based on broad-beam nitrogen implantation through apertures in electron beam lithography resist. This method enables high-throughput nanofabrication of single NV centers on sub-100 nm length scales. Secondary ion mass spectroscopy (SIMS) measurements facilitate depth profiling of the implanted nitrogen to provide…
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We demonstrate a technique to nanofabricate nitrogen vacancy (NV) centers in diamond based on broad-beam nitrogen implantation through apertures in electron beam lithography resist. This method enables high-throughput nanofabrication of single NV centers on sub-100 nm length scales. Secondary ion mass spectroscopy (SIMS) measurements facilitate depth profiling of the implanted nitrogen to provide three-dimensional characterization of the NV center spatial distribution. Measurements of NV center coherence with on-chip coplanar waveguides suggest a pathway for incorporating this scalable nanofabrication technique in future quantum applications.
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Submitted 2 July, 2010; v1 submitted 1 July, 2010;
originally announced July 2010.
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Critical issues in the formation of quantum computer test structures by ion implantation
Authors:
T. Schenkel,
C. C. Lo,
C. D. Weis,
A. Schuh,
A. Persaud,
J. Bokor
Abstract:
The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the development of single atom devices. We briefly review recent results in the characterization of spin dependent transport and single ion doping and then discuss the diffusion and segregation behaviour of phosphorus, antimon…
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The formation of quantum computer test structures in silicon by ion implantation enables the characterization of spin readout mechanisms with ensembles of dopant atoms and the development of single atom devices. We briefly review recent results in the characterization of spin dependent transport and single ion doping and then discuss the diffusion and segregation behaviour of phosphorus, antimony and bismuth ions from low fluence, low energy implantations as characterized through depth profiling by secondary ion mass spectrometry (SIMS). Both phosphorus and bismuth are found to segregate to the SiO2/Si interface during activation anneals, while antimony diffusion is found to be minimal. An effect of the ion charge state on the range of antimony ions, 121Sb25+, in SiO2/Si is also discussed.
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Submitted 29 April, 2009;
originally announced April 2009.
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Mapping of ion beam induced current changes in FinFETs
Authors:
C. D. Weis,
A. Schuh,
A. Batra,
A. Persaud,
I. W. Rangelow,
J. Bokor,
C. C. Lo,
S. Cabrini,
D. Olynick,
S. Duhey,
T. Schenkel
Abstract:
We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 um and 100 nm in diameter. Ion impacts upset the channel current due to formation of posi…
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We report on progress in ion placement into silicon devices with scanning probe alignment. The device is imaged with a scanning force microscope (SFM) and an aligned argon beam (20 keV, 36 keV) is scanned over the transistor surface. Holes in the lever of the SFM tip collimate the argon beam to sizes of 1.6 um and 100 nm in diameter. Ion impacts upset the channel current due to formation of positive charges in the oxide areas. The induced changes in the source-drain current are recorded in dependence of the ion beam position in respect to the FinFET. Maps of local areas responding to the ion beam are obtained.
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Submitted 12 September, 2008; v1 submitted 11 September, 2008;
originally announced September 2008.
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Single-atom doping for quantum device development in diamond and silicon
Authors:
C. D. Weis,
A. Schuh,
A. Batra,
A. Persaud,
I. W. Rangelow,
J. Bokor,
C. C. Lo,
S. Cabrini,
E. Sideras-Haddad,
G. D. Fuchs,
R. Hanson,
D. D. Awschalom,
T. Schenkel
Abstract:
The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in single atoms, such as proposed quantum computers. We describe a single atom injector, in which the im…
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The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in single atoms, such as proposed quantum computers. We describe a single atom injector, in which the imaging and alignment capabilities of a scanning force microscope (SFM) are integrated with ion beams from a series of ion sources and with sensitive detection of current transients induced by incident ions. Ion beams are collimated by a small hole in the SFM tip and current changes induced by single ion impacts in transistor channels enable reliable detection of single ion hits. We discuss resolution limiting factors in ion placement and processing and paths to single atom (and color center) array formation for systematic testing of quantum computer architectures in silicon and diamond.
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Submitted 12 June, 2008;
originally announced June 2008.
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Detection of low energy single ion impacts in micron scale transistors at room temperature
Authors:
A. Batra,
C. D. Weis,
J. Reijonen,
A. Persaud,
S. Cabrini,
C. C. Lo,
J. Bokor,
T. Schenkel
Abstract:
We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes of planar, micro-scale FETs by electron beam assisted etching. FET currents increase due to the generation of positively charged defects in gate oxides when io…
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We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes of planar, micro-scale FETs by electron beam assisted etching. FET currents increase due to the generation of positively charged defects in gate oxides when ions (121Sb12+, 14+, Xe6+; 50 to 70 keV) impinge into channel regions. Implant damage is repaired by rapid thermal annealing, enabling iterative cycles of device doping and electrical characterization for development of single atom devices and studies of dopant fluctuation effects.
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Submitted 27 September, 2007; v1 submitted 25 September, 2007;
originally announced September 2007.
