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VO2 nanosheets: controlling the THz properties through strain engineering
Authors:
Elsa Abreu,
Mengkun Liu,
Jiwei Lu,
Kevin G. West,
Salinporn Kittiwatanakul,
Wenjing Yin,
Stuart A. Wolf,
Richard D. Averitt
Abstract:
We investigate far-infrared properties of strain engineered vanadium dioxide nanosheets through epitaxial growth on a (100)R TiO2 substrate. The nanosheets exhibit large uniaxial strain leading to highly uniform and oriented cracks along the rutile c-axis. Dramatic anisotropy arises for both the metal-insulator transition temperature, which is different from the structural transition temperature a…
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We investigate far-infrared properties of strain engineered vanadium dioxide nanosheets through epitaxial growth on a (100)R TiO2 substrate. The nanosheets exhibit large uniaxial strain leading to highly uniform and oriented cracks along the rutile c-axis. Dramatic anisotropy arises for both the metal-insulator transition temperature, which is different from the structural transition temperature along the cR axis, and the metallic state conductivity. Detailed analysis reveals a Mott-Hubbard like behavior along the rutile cR axis.
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Submitted 7 December, 2011;
originally announced December 2011.
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Exchange Bias Induced by the Fe3O4 Verwey transition
Authors:
J. de la Venta,
M. Erekhinsky,
Siming Wang,
K. G. West,
R. Morales,
Ivan K. Schuller
Abstract:
We present a study of the exchange bias in different configurations of V2O3 thin films with ferromagnetic layers. The exchange bias is accompanied by a large vertical shift in the magnetization. These effects are only observed when V2O3 is grown on top of Ni80Fe20 permalloy. The magnitude of the vertical shift is as large as 60% of the total magnetization which has never been reported in any syste…
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We present a study of the exchange bias in different configurations of V2O3 thin films with ferromagnetic layers. The exchange bias is accompanied by a large vertical shift in the magnetization. These effects are only observed when V2O3 is grown on top of Ni80Fe20 permalloy. The magnitude of the vertical shift is as large as 60% of the total magnetization which has never been reported in any system. X-Ray diffraction studies show that the growth conditions promote the formation of a ferrimagnetic Fe3O4 interlayer. The change in the easy magnetization axis of Fe3O4 across the Verwey transition at 120 K is correlated with the appearance of exchange bias and vertical shift in magnetization. Both phenomena disappear above 120 K, indicating for the first time a direct relationship between the magnetic signature of the Verwey transition and exchange bias.
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Submitted 10 April, 2012; v1 submitted 17 November, 2011;
originally announced November 2011.
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Target bias voltage effect on properties of magnetic tunnel junctions by biased target ion beam deposition
Authors:
Wei Chen,
Dao N. H. Nam,
Jiwei Lu,
Kevin G. West,
Stuart A. Wolf
Abstract:
Magnetic tunnel junctions (MTJ) with AlOx barrier were fabricated by a deposition tool called Biased Target Ion Beam Deposition (BTIBD) using low energy ion source (0-50 eV) and voltage biased targets. The BTIBD system applies bias voltage directly and only on the desired targets, providing enough sputtering energy and avoiding "overspill" contamination during film deposition. The successful dep…
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Magnetic tunnel junctions (MTJ) with AlOx barrier were fabricated by a deposition tool called Biased Target Ion Beam Deposition (BTIBD) using low energy ion source (0-50 eV) and voltage biased targets. The BTIBD system applies bias voltage directly and only on the desired targets, providing enough sputtering energy and avoiding "overspill" contamination during film deposition. The successful deposition of AlOx-MTJs demonstrated the capability of BTIBD to make multilayer structures with good film quality. MTJ thin film surface roughness and intermixing between layers are among the key problems leading to low TMR performance. Here by studying the bias voltage effect on MTJ properties via the measurement of Neel coupling field and TMR, we suggest that the lower bias voltage reduces the intermixing that occurs when top CoFe free layer is deposited on AlOx barrier, but produces relatively high surface roughness. On the other hand, higher energy deposition enhances both interlayer mixing and surface flattening. Such understanding of bias voltage effects on film properties could be used to optimize the MTJ performances.
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Submitted 17 January, 2009;
originally announced January 2009.
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Propagation of Exchange Bias in CoFe/FeMn/CoFe Trilayers
Authors:
D. N. H. Nam,
W. Chen,
K. G. West,
D. M. Kirkwood,
J. Lu,
S. A. Wolf
Abstract:
CoFe/FeMn, FeMn/CoFe bilayers and CoFe/FeMn/CoFe trilayers were grown in magnetic field and at room temperature. The exchange bias field $H_{eb}$ depends strongly on the order of depositions and is much higher at CoFe/FeMn than at FeMn/CoFe interfaces. By combining the two bilayer structures into symmetric CoFe/FeMn($t_\mathrm{FeMn}$)/CoFe trilayers, $H_{eb}^t$ and $H_{eb}^b$ of the top and bott…
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CoFe/FeMn, FeMn/CoFe bilayers and CoFe/FeMn/CoFe trilayers were grown in magnetic field and at room temperature. The exchange bias field $H_{eb}$ depends strongly on the order of depositions and is much higher at CoFe/FeMn than at FeMn/CoFe interfaces. By combining the two bilayer structures into symmetric CoFe/FeMn($t_\mathrm{FeMn}$)/CoFe trilayers, $H_{eb}^t$ and $H_{eb}^b$ of the top and bottom CoFe layers, respectively, are both enhanced. Reducing $t_\mathrm{FeMn}$ of the trilayers also results in enhancements of both $H_{eb}^b$ and $H_{eb}^t$. These results evidence the propagation of exchange bias between the two CoFe/FeMn and FeMn/CoFe interfaces mediated by the FeMn antiferromagnetic order.
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Submitted 13 September, 2008;
originally announced September 2008.
