Showing 1–50 of 251 results for author: Wieck, A D

Electrical control of a Kondo spin screening cloud

Authors: Ngoc Han Tu, Donghoon Kim, Minsoo Kim, Jeongmin Shim, Ryo Ito, David Pomaranski, Ivan V. Borzenets, Arne Ludwig, Andreas D. Wieck, Heung-Sun Sim, Michihisa Yamamoto

Abstract: In metals and semiconductors, an impurity spin is quantum entangled with and thereby screened by surrounding conduction electrons at low temperatures, called the Kondo screening cloud. Quantum confinement of the Kondo screening cloud in a region, called a Kondo box, with a length smaller than the original cloud extension length strongly deforms the screening cloud and provides a way of controlling… ▽ More In metals and semiconductors, an impurity spin is quantum entangled with and thereby screened by surrounding conduction electrons at low temperatures, called the Kondo screening cloud. Quantum confinement of the Kondo screening cloud in a region, called a Kondo box, with a length smaller than the original cloud extension length strongly deforms the screening cloud and provides a way of controlling the entanglement. Here we realize such a Kondo box and develop an approach to controlling and monitoring the entanglement. It is based on a spin localized in a semiconductor quantum dot, which is screened by conduction electrons along a quasi-one-dimensional channel. The box is formed between the dot and a quantum point contact placed on a channel. As the quantum point contact is tuned to make the confinement stronger, electron conductance through the dot as a function of temperature starts to deviate from the known universal function of the single energy scale, the Kondo temperature. Nevertheless, the entanglement is monitored by the measured conductance according to our theoretical development. The dependence of the monitored entanglement on the confinement strength and temperature implies that the Kondo screening is controlled by tuning the quantum point contact. Namely, the Kondo cloud is deformed by the Kondo box in the region across the original cloud length. Our findings offer a way of manipulating and detecting spatially extended quantum many-body entanglement in solids by electrical means. △ Less

Submitted 18 April, 2024; originally announced April 2024.

Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential

Authors: D. Q. Wang, D. Reuter, A. D. Wieck, A. R. Hamilton, O. Klochan

Abstract: We present a new double-layer design for 2D surface superlattice systems in GaAs-AlGaAs heterostructures. Unlike previous studies, our device (1) uses an in-situ gate, which allows very short period superlattice in high mobility, shallow heterostructures; (2) enables independent control of the carrier density and the superlattice modulation potential amplitude over a wide range. We characterise th… ▽ More We present a new double-layer design for 2D surface superlattice systems in GaAs-AlGaAs heterostructures. Unlike previous studies, our device (1) uses an in-situ gate, which allows very short period superlattice in high mobility, shallow heterostructures; (2) enables independent control of the carrier density and the superlattice modulation potential amplitude over a wide range. We characterise this device design using low-temperature magneto-transport measurements and show that the fabrication process caused minimal damage to the system. We demonstrate the tuning of potential modulation from weak (much smaller than Fermi energy) to strong (larger than the Fermi energy) regimes. △ Less

Submitted 11 March, 2024; originally announced March 2024.

Comments: 4 pages, 3 figures

Dynamics of quantum cellular automata electron transition in triple quantum dots

Authors: Takumi Aizawa, Motoya Shinozaki, Yoshihiro Fujiwara, Takeshi Kumasaka, Wataru Izumida, Arne Ludwig, Andreas D. Wieck, Tomohiro Otsuka

Abstract: The quantum cellular automata (QCA) effect is a transition in which multiple electron move coordinately by Coulomb interactions and observed in multiple quantum dots. This effect will be useful for realizing and improving quantum cellular automata and information transfer using multiple electron transfer. In this paper, we investigate the real-time dynamics of the QCA charge transitions in a tripl… ▽ More The quantum cellular automata (QCA) effect is a transition in which multiple electron move coordinately by Coulomb interactions and observed in multiple quantum dots. This effect will be useful for realizing and improving quantum cellular automata and information transfer using multiple electron transfer. In this paper, we investigate the real-time dynamics of the QCA charge transitions in a triple quantum dot by using fast charge-state readout realized by rf reflectometry. We observe real-time charge transitions and analyze the tunneling rate comparing with the first-order tunneling processes. We also measure the gate voltage dependence of the QCA transition and show that it can be controlled by the voltage. △ Less

Submitted 10 March, 2024; originally announced March 2024.

Comments: 11pages, 4 figures

Accelerated adiabatic passage of a single electron spin qubit in quantum dots

Authors: Xiao-Fei Liu, Yuta Matsumoto, Takafumi Fujita, Arne Ludwig, Andreas D. Wieck, Akira Oiwa

Abstract: Adiabatic processes can keep the quantum system in its instantaneous eigenstate, which is robust to noises and dissipation. However, it is limited by sufficiently slow evolution. Here, we experimentally demonstrate the transitionless quantum driving (TLQD) of the shortcuts to adiabaticity in gate-defined semiconductor quantum dots (QDs) to greatly accelerate the conventional adiabatic passage for… ▽ More Adiabatic processes can keep the quantum system in its instantaneous eigenstate, which is robust to noises and dissipation. However, it is limited by sufficiently slow evolution. Here, we experimentally demonstrate the transitionless quantum driving (TLQD) of the shortcuts to adiabaticity in gate-defined semiconductor quantum dots (QDs) to greatly accelerate the conventional adiabatic passage for the first time. For a given efficiency of quantum state transfer, the acceleration can be more than twofold. The dynamic properties also prove that the TLQD can guarantee fast and high-fidelity quantum state transfer. In order to compensate for the diabatic errors caused by dephasing noises, the modified TLQD is proposed and demonstrated in experiment by enlarging the width of the counter-diabatic drivings. The benchmarking shows that the state transfer fidelity of 97.8% can be achieved. This work will greatly promote researches and applications about quantum simulations and adiabatic quantum computation based on the gate-defined QDs. △ Less

Submitted 28 January, 2024; v1 submitted 20 December, 2023; originally announced December 2023.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. Lett. 132, 027002 (2024)

On-Demand Single-Electron Source via Single-Cycle Acoustic Pulses

Authors: Shunsuke Ota, Junliang Wang, Hermann Edlbauer, Yuma Okazaki, Shuji Nakamura, Takehiko Oe, Arne Ludwig, Andreas D. Wieck, Hermann Sellier, Christopher Bäuerle, Nobu-Hisa Kaneko, Tetsuo Kodera, Shintaro Takada

Abstract: Surface acoustic waves (SAWs) are a reliable solution to transport single electrons with precision in piezoelectric semiconductor devices. Recently, highly efficient single-electron transport with a strongly compressed single-cycle acoustic pulse has been demonstrated. This approach, however, requires surface gates constituting the quantum dots, their wiring, and multiple gate movements to load an… ▽ More Surface acoustic waves (SAWs) are a reliable solution to transport single electrons with precision in piezoelectric semiconductor devices. Recently, highly efficient single-electron transport with a strongly compressed single-cycle acoustic pulse has been demonstrated. This approach, however, requires surface gates constituting the quantum dots, their wiring, and multiple gate movements to load and unload the electrons, which is very time-consuming. Here, on the contrary, we employ such a single-cycle acoustic pulse in a much simpler way - without any quantum dot at the entrance or exit of a transport channel - to perform single-electron transport between distant electron reservoirs. We observe the transport of a solitary electron in a single-cycle acoustic pulse via the appearance of the quantized acousto-electric current. The simplicity of our approach allows for on-demand electron emission with arbitrary delays on a ns time scale. We anticipate that enhanced synthesis of the SAWs will facilitate electron-quantum-optics experiments with multiple electron flying qubits. △ Less

Submitted 30 November, 2023; originally announced December 2023.

Electrical resistance associated with the scattering of optically oriented electrons in n-GaAs

Authors: M. D. Ragoza, N. V. Kozyrev, S. V. Nekrasov, B. R. Namozov, Yu. G. Kusrayev, N. Bart, A. Ludwig, A. D. Wieck

Abstract: In a bulk GaAs crystal, an unusual magnetoresistance effect, which takes place when a spin-polarized current flows through the sample, was detected. Under conditions of optical pumping of electron spins, an external magnetic field directed along the electric current and perpendicular to the oriented spins decreases the resistance of the material. The phenomenon is due to the spin-dependent scatter… ▽ More In a bulk GaAs crystal, an unusual magnetoresistance effect, which takes place when a spin-polarized current flows through the sample, was detected. Under conditions of optical pumping of electron spins, an external magnetic field directed along the electric current and perpendicular to the oriented spins decreases the resistance of the material. The phenomenon is due to the spin-dependent scattering of electrons by neutral donors. It was found that the sign of the magnetoresistance does not depend on the sign of the exciting light circular polarization, the effect is even with respect to the sign of the spin polarization of the carriers, which indicates a correlation between the spins of optically oriented free electrons and electrons localized on donors. △ Less

Submitted 30 November, 2023; originally announced November 2023.

Comments: 9 pages, 4 figures

A quantum dot coupled to a suspended-beam mechanical resonator: from the unresolved- to the resolved-sideband regime

Authors: Clemens Spinnler, Giang N. Nguyen, Ying Wang, Marcel Erbe, Alisa Javadi, Liang Zhai, Sven Scholz, Andreas D. Wieck, Arne Ludwig, Peter Lodahl, Leonardo Midolo, Richard J. Warburton

Abstract: We present experiments in which self-assembled InAs quantum dots are coupled to a thin, suspended-beam GaAs resonator. The quantum dots are driven resonantly and the resonance fluorescence is detected. The narrow quantum-dot linewidths, just a factor of three larger than the transform limit, result in a high sensitivity to the mechanical motion. We show that one quantum dot couples to eight mechan… ▽ More We present experiments in which self-assembled InAs quantum dots are coupled to a thin, suspended-beam GaAs resonator. The quantum dots are driven resonantly and the resonance fluorescence is detected. The narrow quantum-dot linewidths, just a factor of three larger than the transform limit, result in a high sensitivity to the mechanical motion. We show that one quantum dot couples to eight mechanical modes spanning a frequency range from $30$ to $600~\mathrm{MHz}$: one quantum dot provides an extensive characterisation of the mechanical resonator. The coupling spans the unresolved-sideband to the resolved-sideband regimes. Finally, we present the first detection of thermally-driven phonon sidebands (at $4.2~\mathrm{K}$) in the resonance-fluoresence spectrum. △ Less

Submitted 9 November, 2023; originally announced November 2023.

A single-photon emitter coupled to a phononic-crystal resonator in the resolved-sideband regime

Authors: Clemens Spinnler, Giang N. Nguyen, Ying Wang, Liang Zhai, Alisa Javadi, Marcel Erbe, Sven Scholz, Andreas D. Wieck, Arne Ludwig, Peter Lodahl, Leonardo Midolo, Richard J. Warburton

Abstract: A promising route towards the heralded creation and annihilation of single-phonons is to couple a single-photon emitter to a mechanical resonator. The challenge lies in reaching the resolved-sideband regime with a large coupling rate and a high mechanical quality factor. We achieve all of this by coupling self-assembled InAs quantum dots to a small-mode-volume phononic-crystal resonator with mecha… ▽ More A promising route towards the heralded creation and annihilation of single-phonons is to couple a single-photon emitter to a mechanical resonator. The challenge lies in reaching the resolved-sideband regime with a large coupling rate and a high mechanical quality factor. We achieve all of this by coupling self-assembled InAs quantum dots to a small-mode-volume phononic-crystal resonator with mechanical frequency $Ωおめが_\mathrm{m}/2πぱい= 1.466~\mathrm{GHz}$ and quality factor $Q_\mathrm{m} = 2.1\times10^3$. Thanks to the high coupling rate of $g_\mathrm{ep}/2πぱい= 2.9~\mathrm{MHz}$, and by exploiting a matching condition between the effective Rabi and mechanical frequencies, we are able to observe the interaction between the two systems. Our results represent a major step towards quantum control of the mechanical resonator via a single-photon emitter. △ Less

Submitted 9 November, 2023; originally announced November 2023.

The interplay between electron tunneling and Auger emission in a single quantum emitter weakly coupled to an electron reservoir

Authors: Marcel Zöllner, Hendrik Mannel, Fabio Rimek, Britta Maib, Nico Schwarz, Andreas D. Wieck, Arne Ludwig, Axel Lorke, Martin Geller

Abstract: In quantum dots (QDs) the Auger recombination is a non-radiative scattering process in which the optical transition energy of a charged exciton (trion) is transferred to an additional electron leaving the dot. Electron tunneling from a reservoir is the competing process that replenishes the QD with an electron again. Here, we study the dependence of the tunneling and Auger recombintaion rate on th… ▽ More In quantum dots (QDs) the Auger recombination is a non-radiative scattering process in which the optical transition energy of a charged exciton (trion) is transferred to an additional electron leaving the dot. Electron tunneling from a reservoir is the competing process that replenishes the QD with an electron again. Here, we study the dependence of the tunneling and Auger recombintaion rate on the applied electric field using high-resolution time-resolved resonance fluorescence (RF) measurements. With the given p-i-n diode structure and a tunnel barrier between the electron reservoir and the QD of $45\,$nm, we measured a tunneling rate into the QD in the order of ms$^{-1}$. This rate shows a strong decrease by almost an order of magnitude for decreasing electric field, while the Auger emission rate decreases by a factor of five in the same voltage range. Furthermore, we study in detail the influence of the Auger recombination and the tunneling rate from the charge reservoir into the QD on the intensity and linewidth of the trion transition. Besides the well-known quenching of the trion transition, we observe in our time-resolved RF measurements a strong influence of the tunneling rate on the observed linewidth. The steady-state RF measurement yields a broadened trion transition of about $1.5\,$GHz for an Auger emission rate of the same order as the electron tunneling rate. In a non-equilibrium measurement, the Auger recombination can be suppressed, and a more than four times smaller linewidth of $340\,$MHz ($1.4\,$$μみゅー$eV) is measured. △ Less

Submitted 20 October, 2023; originally announced October 2023.

Enhanced Electron Spin Coherence in a GaAs Quantum Emitter

Authors: Giang N. Nguyen, Clemens Spinnler, Mark R. Hogg, Liang Zhai, Alisa Javadi, Carolin A. Schrader, Marcel Erbe, Marcus Wyss, Julian Ritzmann, Hans-Georg Babin, Andreas D. Wieck, Arne Ludwig, Richard J. Warburton

Abstract: A spin-photon interface should operate with both coherent photons and a coherent spin to enable cluster-state generation and entanglement distribution. In high-quality devices, self-assembled GaAs quantum dots are near-perfect emitters of on-demand coherent photons. However, the spin rapidly decoheres via the magnetic noise arising from the host nuclei. Here, we address this drawback by implementi… ▽ More A spin-photon interface should operate with both coherent photons and a coherent spin to enable cluster-state generation and entanglement distribution. In high-quality devices, self-assembled GaAs quantum dots are near-perfect emitters of on-demand coherent photons. However, the spin rapidly decoheres via the magnetic noise arising from the host nuclei. Here, we address this drawback by implementing an all-optical nuclear-spin cooling scheme on a GaAs quantum dot. The electron-spin coherence time increases 156-fold from $T_2^*$ = 3.9 ns to 0.608 $μみゅー$s. The cooling scheme depends on a non-collinear term in the hyperfine interaction. The results show that such a term is present even though the strain is low and no external stress is applied. Our work highlights the potential of optically-active GaAs quantum dots as fast, highly coherent spin-photon interfaces. △ Less

Submitted 5 July, 2023; originally announced July 2023.

Controlled Coherent Coupling in a Quantum Dot Molecule Revealed by Ultrafast Four-Wave Mixing Spectroscopy

Authors: Daniel Wigger, Johannes Schall, Marielle Deconinck, Nikolai Bart, Paweł Mrowiński, Mateusz Krzykowski, Krzysztof Gawarecki, Martin von Helversen, Ronny Schmidt, Lucas Bremer, Frederik Bopp, Dirk Reuter, Andreas D. Wieck, Sven Rodt, Julien Renard, Gilles Nogues, Arne Ludwig, Paweł Machnikowski, Jonathan J. Finley, Stephan Reitzenstein, Jacek Kasprzak

Abstract: Semiconductor quantum dot molecules are considered as promising candidates for quantum technological applications due to their wide tunability of optical properties and coverage of different energy scales associated with charge and spin physics. While previous works have studied the tunnel-coupling of the different excitonic charge complexes shared by the two quantum dots by conventional optical s… ▽ More Semiconductor quantum dot molecules are considered as promising candidates for quantum technological applications due to their wide tunability of optical properties and coverage of different energy scales associated with charge and spin physics. While previous works have studied the tunnel-coupling of the different excitonic charge complexes shared by the two quantum dots by conventional optical spectroscopy, we here report on the first demonstration of a coherently controlled inter-dot tunnel-coupling focusing on the quantum coherence of the optically active trion transitions. We employ ultrafast four-wave mixing spectroscopy to resonantly generate a quantum coherence in one trion complex, transfer it to and probe it in another trion configuration. With the help of theoretical modelling on different levels of complexity we give an instructive explanation of the underlying coupling mechanism and dynamical processes. △ Less

Submitted 20 April, 2023; originally announced April 2023.

Tailoring potentials by simulation-aided design of gate layouts for spin qubit applications

Authors: Inga Seidler, Malte Neul, Eugen Kammerloher, Matthias Künne, Andreas Schmidbauer, Laura Diebel, Arne Ludwig, Julian Ritzmann, Andreas D. Wieck, Dominique Bougeard, Hendrik Bluhm, Lars R. Schreiber

Abstract: Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and optimizing for yield and performance becomes necessary. Simulation tools from advanced semiconductor industry need to be adapted for smaller structure sizes and electron numbers. Here, we present a general approach for elect… ▽ More Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and optimizing for yield and performance becomes necessary. Simulation tools from advanced semiconductor industry need to be adapted for smaller structure sizes and electron numbers. Here, we present a general approach for electrostatically modelling new spin qubit device layouts, considering gate voltages, heterostructures, reservoirs and an applied source-drain bias. Exemplified by a specific potential, we study the influence of each parameter. We verify our model by indirectly probing the potential landscape of two design implementations through transport measurements. We use the simulations to identify critical design areas and optimize for robustness with regard to influence and resolution limits of the fabrication process. △ Less

Submitted 23 March, 2023; originally announced March 2023.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. Applied 20, 044058 (2023)

Magnetic tuning of the tunnel coupling in an optically active quantum dot molecule

Authors: Frederik Bopp, Charlotte Cullip, Christopher Thalacker, Michelle Lienhart, Johannes Schall, Nikolai Bart, Friedrich Sbresny, Katarina Boos, Sven Rodt, Dirk Reuter, Arne Ludwig, Andreas D. Wieck, Stephan Reitzenstein, Filippo Troiani, Guido Goldoni, Elisa Molinari, Kai Müller, Jonathan J. Finley

Abstract: Self-assembled optically active quantum dot molecules (QDMs) allow the creation of protected qubits via singlet-triplet spin states. The qubit energy splitting of these states is defined by the tunnel coupling strength and is, therefore, determined by the potential landscape and thus fixed during growth. Applying an in-plane magnetic field increases the confinement of the hybridized wave functions… ▽ More Self-assembled optically active quantum dot molecules (QDMs) allow the creation of protected qubits via singlet-triplet spin states. The qubit energy splitting of these states is defined by the tunnel coupling strength and is, therefore, determined by the potential landscape and thus fixed during growth. Applying an in-plane magnetic field increases the confinement of the hybridized wave functions within the quantum dots, leading to a decrease of the tunnel coupling strength. We achieve a tuning of the coupling strength by $(53.4\pm1.7)$ %. The ability to fine-tune this coupling is essential for quantum network and computing applications that require quantum systems with near identical performance. △ Less

Submitted 22 March, 2023; originally announced March 2023.

Comments: Main: 6 pages, 3 figures, Supplemental: 4 pages, 2 figures

Independent electrical control of two quantum dots coupled through a photonic-crystal waveguide

Authors: Xiao-Liu Chu, Camille Papon, Nikolai Bart, Andreas D. Wieck, Arne Ludwig, Leonardo Midolo, Nir Rotenberg, Peter Lodahl

Abstract: Efficient light-matter interaction at the single-photon level is of fundamental importance in emerging photonic quantum technology. A fundamental challenge is addressing multiple quantum emitters at once, as intrinsic inhomogeneities of solid-state platforms require individual tuning of each emitter. We present the realization of two semiconductor quantum dot emitters that are efficiently coupled… ▽ More Efficient light-matter interaction at the single-photon level is of fundamental importance in emerging photonic quantum technology. A fundamental challenge is addressing multiple quantum emitters at once, as intrinsic inhomogeneities of solid-state platforms require individual tuning of each emitter. We present the realization of two semiconductor quantum dot emitters that are efficiently coupled to a photonic-crystal waveguide and individually controllable by applying a local electric Stark field. We present resonant transmission and fluorescence spectra in order to probe the coupling of the two emitters to the waveguide. We exploit the single-photon stream from one quantum dot to perform spectroscopy on the second quantum dot positioned 16$μみゅー$m away in the waveguide. Furthermore, power-dependent resonant transmission measurements reveals signatures of coherent coupling between the emitters. Our work provides a scalable route to realizing multi-emitter collective coupling, which has inherently been missing for solid-state deterministic photon emitters. △ Less

Submitted 3 March, 2023; v1 submitted 1 March, 2023; originally announced March 2023.

Comments: 6 pages, 3 figures

Visual explanations of machine learning model estimating charge states in quantum dots

Authors: Yui Muto, Takumi Nakaso, Motoya Shinozaki, Takumi Aizawa, Takahito Kitada, Takashi Nakajima, Matthieu R. Delbecq, Jun Yoneda, Kenta Takeda, Akito Noiri, Arne Ludwig, Andreas D. Wieck, Seigo Tarucha, Atsunori Kanemura, Motoki Shiga, Tomohiro Otsuka

Abstract: Charge state recognition in quantum dot devices is important in the preparation of quantum bits for quantum information processing. Toward auto-tuning of larger-scale quantum devices, automatic charge state recognition by machine learning has been demonstrated. For further development of this technology, an understanding of the operation of the machine learning model, which is usually a black box,… ▽ More Charge state recognition in quantum dot devices is important in the preparation of quantum bits for quantum information processing. Toward auto-tuning of larger-scale quantum devices, automatic charge state recognition by machine learning has been demonstrated. For further development of this technology, an understanding of the operation of the machine learning model, which is usually a black box, will be useful. In this study, we analyze the explainability of the machine learning model estimating charge states in quantum dots by gradient-weighted class activation mapping, which identified class-discriminative regions for the predictions. The model predicts the state based on the change transition lines, indicating that human-like recognition is realized. We also demonstrate improvements of the model by utilizing feedback from the mapping results. Due to the simplicity of our simulation and pre-processing methods, our approach offers scalability without significant additional simulation costs, demonstrating its suitability for future quantum dot system expansions. △ Less

Submitted 27 December, 2023; v1 submitted 26 October, 2022; originally announced October 2022.

Comments: 17 pages, 4 figures

Journal ref: APL Machine Learning 2, 026110 (2024)

Cavity-enhanced single-shot readout of a quantum dot spin within 3 nanoseconds

Authors: Nadia Olympia Antoniadis, Mark Richard Hogg, Willy Frederik Stehl, Alisa Javadi, Natasha Tomm, Rüdiger Schott, Sascha René Valentin, Andreas Dirk Wieck, Arne Ludwig, Richard John Warburton

Abstract: Rapid, high-fidelity single-shot readout of quantum states is a ubiquitous requirement in quantum information technologies, playing a crucial role in quantum computation, quantum error correction, and fundamental tests of non-locality. Readout of the spin state of an optically active emitter can be achieved by driving a spin-preserving optical transition and detecting the emitted photons. The spee… ▽ More Rapid, high-fidelity single-shot readout of quantum states is a ubiquitous requirement in quantum information technologies, playing a crucial role in quantum computation, quantum error correction, and fundamental tests of non-locality. Readout of the spin state of an optically active emitter can be achieved by driving a spin-preserving optical transition and detecting the emitted photons. The speed and fidelity of this approach is typically limited by a combination of low photon collection rates and measurement back-action. Here, we demonstrate single-shot optical readout of a semiconductor quantum dot spin state, achieving a readout time of only a few nanoseconds. In our approach, gated semiconductor quantum dots are embedded in an open microcavity. The Purcell enhancement generated by the microcavity increases the photon creation rate from one spin state but not from the other, as well as efficiently channelling the photons into a well-defined detection mode. We achieve single-shot readout of an electron spin state in 3 nanoseconds with a fidelity of (95.2$\pm$0.7)%, and observe quantum jumps using repeated single-shot measurements. Owing to the speed of our readout, errors resulting from measurement-induced back-action have minimal impact. Our work reduces the spin readout-time to values well below both the achievable spin relaxation and dephasing times in semiconductor quantum dots, opening up new possibilities for their use in quantum technologies. △ Less

Submitted 25 October, 2022; originally announced October 2022.

In-flight detection of few electrons using a singlet-triplet spin qubit

Authors: Vivien Thiney, Pierre-André Mortemousque, Konstantinos Rogdakis, Romain Thalineau, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Christopher Bäuerle, Tristan Meunier

Abstract: We investigate experimentally the capacitive coupling between a two-electron singlet-triplet spin qubit and flying electrons propagating in quantum Hall edge channels. After calibration of the spin qubit detector, we assess its charge sensibility and demonstrate experimentally the detection of less than five flying electrons with average measurement. This experiment demonstrates that the spin qubi… ▽ More We investigate experimentally the capacitive coupling between a two-electron singlet-triplet spin qubit and flying electrons propagating in quantum Hall edge channels. After calibration of the spin qubit detector, we assess its charge sensibility and demonstrate experimentally the detection of less than five flying electrons with average measurement. This experiment demonstrates that the spin qubit is an ultrasensitive and fast charge detector with the perspective of a future single shot-detection of a single flying electron. This work opens the route toward quantum electron optics experiments at the single electron level in semiconductor circuits. △ Less

Submitted 22 November, 2022; v1 submitted 17 October, 2022; originally announced October 2022.

Complete readout of two-electron spin states in a double quantum dot

Authors: Martin Nurizzo, Baptiste Jadot, Pierre-André Mortemousque, Vivien Thiney, Emmanuel Chanrion, David Niegemann, Matthieu Dartiailh, Arne Ludwig, Andreas D. Wieck, Christopher Bäuerle, Matias Urdampilleta, Tristan Meunier

Abstract: We propose and demonstrate complete spin state readout of a two-electron system in a double quantum dot probed by an electrometer. The protocol is based on repetitive single shot measurements using Pauli spin blockade and our ability to tune on fast timescales the detuning and the interdot tunnel coupling between the GHz and sub-Hz regime. A sequence of three distinct manipulations and measurement… ▽ More We propose and demonstrate complete spin state readout of a two-electron system in a double quantum dot probed by an electrometer. The protocol is based on repetitive single shot measurements using Pauli spin blockade and our ability to tune on fast timescales the detuning and the interdot tunnel coupling between the GHz and sub-Hz regime. A sequence of three distinct manipulations and measurements allows establishing if the spins are in S, Tzero, Tplus or Tminus state. This work points at a procedure to reduce the overhead for spin readout, an important challenge for scaling up spin qubit platforms. △ Less

Submitted 1 September, 2022; originally announced September 2022.

Comments: 11 pages, 7 figures

Generation of a single-cycle acoustic pulse: a scalable solution for transport in single-electron circuits

Authors: Junliang Wang, Shunsuke Ota, Hermann Edlbauer, Baptiste Jadot, Pierre-André Mortemousque, Aymeric Richard, Yuma Okazaki, Shuji Nakamura, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Tristan Meunier, Tetsuo Kodera, Nobu-Hisa Kaneko, Shintaro Takada, Christopher Bäuerle

Abstract: The synthesis of single-cycle, compressed optical and microwave pulses sparked novel areas of fundamental research. In the field of acoustics, however, such a generation has not been introduced yet. For numerous applications, the large spatial extent of surface acoustic waves (SAW) causes unwanted perturbations and limits the accuracy of physical manipulations. Particularly, this restriction appli… ▽ More The synthesis of single-cycle, compressed optical and microwave pulses sparked novel areas of fundamental research. In the field of acoustics, however, such a generation has not been introduced yet. For numerous applications, the large spatial extent of surface acoustic waves (SAW) causes unwanted perturbations and limits the accuracy of physical manipulations. Particularly, this restriction applies to SAW-driven quantum experiments with single flying electrons, where extra modulation renders the exact position of the transported electron ambiguous and leads to undesired spin mixing. Here, we address this challenge by demonstrating single-shot chirp synthesis of a strongly compressed acoustic pulse. Employing this solitary SAW pulse to transport a single electron between distant quantum dots with an efficiency exceeding 99%, we show that chirp synthesis is competitive with regular transduction approaches. Performing a time-resolved investigation of the SAW-driven sending process, we outline the potential of the chirped SAW pulse to synchronize single-electron transport from many quantum-dot sources. By superimposing multiple pulses, we further point out the capability of chirp synthesis to generate arbitrary acoustic waveforms tailorable to a variety of (opto)nanomechanical applications. Our results shift the paradigm of compressed pulses to the field of acoustic phonons and pave the way for a SAW-driven platform of single-electron transport that is precise, synchronized, and scalable. △ Less

Submitted 31 July, 2022; originally announced August 2022.

Comments: To be published in Physical Review X

Journal ref: Phys. Rev. X 12, 031035 (2022)

Controlled quantum dot array segmentation via a highly tunable interdot tunnel coupling

Authors: Martin Nurizzo, Baptiste Jadot, Pierre-André Mortemousque, Vivien Thiney, Emmanuel Chanrion, Matthieu Dartiailh, Arne Ludwig, Andreas D. Wieck, Christopher Bäuerle, Matias Urdampilleta, Tristan Meunier

Abstract: Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for developing a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots parameters in larger and larger arrays which represents a complex challenge. Partitioning of the system with the help of the inter-dot tunnel barriers can lead to a simp… ▽ More Recent demonstrations using electron spins stored in quantum dots array as qubits are promising for developing a scalable quantum computing platform. An ongoing effort is therefore aiming at the precise control of the quantum dots parameters in larger and larger arrays which represents a complex challenge. Partitioning of the system with the help of the inter-dot tunnel barriers can lead to a simplification for tuning and offers a protection against unwanted charge displacement. In a triple quantum dot system, we demonstrate a nanosecond control of the inter-dot tunnel rate permitting to reach the two extreme regimes, large GHz tunnel coupling and sub-Hz isolation between adjacent dots. We use this novel development to isolate a sub part of the array while performing charge displacement and readout in the rest of the system. The degree of control over the tunnel coupling achieved in a unit cell should motivate future protocol development for tuning, manipulation and readout including this capability. △ Less

Submitted 19 July, 2022; originally announced July 2022.

Comments: 10 pages, 8 figures

Semiconductor membranes for electrostatic exciton trapping in optically addressable quantum transport devices

Authors: Thomas Descamps, Feng Liu, Sebastian Kindel, René Otten, Tobias Hangleiter, Chao Zhao, Mihail Ion Lepsa, Julian Ritzmann, Arne Ludwig, Andreas D. Wieck, Beata E. Kardynał, Hendrik Bluhm

Abstract: Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example, interfacing stationary solid-state qubits with photonic quantum states would open a new pathway towards the realization of a quantum network with extended quantum pr… ▽ More Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example, interfacing stationary solid-state qubits with photonic quantum states would open a new pathway towards the realization of a quantum network with extended quantum processing capacity in each node. While gated devices allow very flexible confinement of electrons or holes, the confinement of excitons without some element of self-assembly is much harder. To address this limitation, we introduce a technique to realize exciton traps in quantum wells via local electric fields by thinning a heterostructure down to a 220 nm thick membrane. We show that mobilities over $1 \times 10^{6}$ cm$^{2}$V$^{-1}$s$^{-1}$ can be retained and that quantum point contacts and Coulomb oscillations can be observed on this structure, which implies that the thinning does not compromise the heterostructure quality. Furthermore, the local lowering of the exciton energy via the quantum-confined Stark effect is confirmed, thus forming exciton traps. These results lay the technological foundations for devices like single photon sources, spin photon interfaces and eventually quantum network nodes in GaAs quantum wells, realized entirely with a top-down fabrication process. △ Less

Submitted 9 November, 2022; v1 submitted 15 July, 2022; originally announced July 2022.

Comments: v2: added missing acknowledgement. v3: fixed typos in acknolwedgement

Extending the time of coherent optical response in ensemble of singly-charged InGaAs quantum dots

Authors: A. N. Kosarev, A. V. Trifonov, I. A. Yugova, I. I. Yanibekov, S. V. Poltavtsev, A. N. Kamenskii, S. E. Scholz, C. Sgroi, A. Ludwig, A. D. Wieck, D. R. Yakovlev, M. Bayer, I. A. Akimov

Abstract: The ability to extend the time scale of the coherent optical response from large ensembles of quantum emitters is highly appealing for applications in quantum information devices. In semiconductor nanostructures, spin degrees of freedom can be used as auxiliary, powerful tools to modify the coherent optical dynamics. Here, we apply this approach to negatively charged (In,Ga)As/GaAs self-assembled… ▽ More The ability to extend the time scale of the coherent optical response from large ensembles of quantum emitters is highly appealing for applications in quantum information devices. In semiconductor nanostructures, spin degrees of freedom can be used as auxiliary, powerful tools to modify the coherent optical dynamics. Here, we apply this approach to negatively charged (In,Ga)As/GaAs self-assembled quantum dots which are considered as excellent quantum emitters with robust optical coherence and high bandwidth. We study 3-pulse spin-dependent photon echoes subject to moderate transverse magnetic fields up to 1 T. We demonstrate that the timescale of coherent optical response can be extended by at least an order of magnitude by the field. Without magnetic field, the photon echo decays with $T_ 2$ = 0.45 ns which is determined by the radiative lifetime of trions $T_1$ = 0.27 ns. In the presence of the transverse magnetic field, the decay of the photon echo signal is given by spin dephasing time of the ensemble of resident electrons $T_{2,e}$ ~ 4 ns. We demonstrate that the non-zero transverse g-factor of the heavy holes in the trion state plays a crucial role in the temporal evolution and magnetic field dependence of the long-lived photon echo signal. △ Less

Submitted 23 January, 2022; originally announced January 2022.

Comments: 9 pages, 4 figures, Supplementary material

Post-processing of real-time quantum event measurements for an optimal bandwidth

Authors: Jens Kerski, Hendrik Mannel, Pia Lochner, Eric Kleinherbers, Annika Kurzmann, Arne Ludwig, Andreas D. Wieck, Jürgen König, Axel Lorke, Martin Geller

Abstract: Single electron tunneling and its transport statistics have been studied for some time using high precision charge detectors. However, this type of detection requires advanced lithography, optimized material systems and low temperatures (mK). A promising alternative, recently demonstrated, is to exploit an optical transition that is turned on or off when a tunnel event occurs. High bandwidths shou… ▽ More Single electron tunneling and its transport statistics have been studied for some time using high precision charge detectors. However, this type of detection requires advanced lithography, optimized material systems and low temperatures (mK). A promising alternative, recently demonstrated, is to exploit an optical transition that is turned on or off when a tunnel event occurs. High bandwidths should be achievable with this approach, although this has not been adequately investigated so far. We have studied low temperature resonance fluorescence from a self-assembled quantum dot embedded in a diode structure. We detect single photons from the dot in real time and evaluate the recorded data only after the experiment, using post-processing to obtain the random telegraph signal of the electron transport. This is a significant difference from commonly used charge detectors and allows us to determine the optimal time resolution for analyzing our data. We show how this post-processing affects both the determination of tunneling rates using waiting-time distributions and statistical analysis using full-counting statistics. We also demonstrate, as an example, that we can analyze our data with bandwidths as high as 350 kHzきろへるつ. Using a simple model, we discuss the limiting factors for achieving the optimal bandwidth and propose how a time resolution of more than 1 MHz could be achieved. △ Less

Submitted 14 December, 2021; originally announced December 2021.

Comments: 8 pages, 4 figures

Electron g-factor determined for quantum dot circuit fabricated from (110)-oriented GaAs quantum well

Authors: T. Nakagawa, S. Lamoureux, T. Fujita, J. Ritzmann, A. Ludwig, A. D. Wieck, A. Oiwa, M. Korkusinski, A. Sachrajda, D. G. Austing, L. Gaudreau

Abstract: The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. In this letter, we demonstrate the operation of a few-electron double quantum dot circuit fabricated from a (110)-oriented GaAs quantum well. We estimate the in-plane electron g-factor from the profile of the enhanced inte… ▽ More The choice of substrate orientation for semiconductor quantum dot circuits offers opportunities for tailoring spintronic properties such as g-factors for specific functionality. In this letter, we demonstrate the operation of a few-electron double quantum dot circuit fabricated from a (110)-oriented GaAs quantum well. We estimate the in-plane electron g-factor from the profile of the enhanced inter-dot tunneling (leakage) current near zero magnetic field. Spin-blockade due to Pauli exclusion can block inter-dot tunneling. However, this blockade becomes inactive due to hyperfine interaction mediated spin flip-flop processes between electron spin states and the nuclear spin of the host material. The g-factor of absolute value ~0.1 found for a magnetic field parallel to the direction [11(bar)0], is approximately a factor of four lower than that for comparable circuits fabricated from material grown on widely-employed standard (001) GaAs substrates, and is in line with reported values determined by purely optical means for quantum well structures grown on (110) GaAs substrates. △ Less

Submitted 14 November, 2021; originally announced November 2021.

Comments: 17 pages, 4 figures

Auger and spin dynamics in a self-assembled quantum dot

Authors: Hendrik Mannel, Jens Kerski, Pia Lochner, Marcel Zöllner, Andreas D. Wieck, Arne Ludwig, Axel Lorke, Martin Geller

Abstract: The Zeeman-split spin states of a single quantum dot can be used together with its optical trion transitions to form a spin-photon interface between a stationary (the spin) and a flying (the photon) quantum bit. Besides long coherence times of the spin state itself, the limiting decoherence mechanisms of the trion states are of central importance. We investigate here in time-resolved resonance flu… ▽ More The Zeeman-split spin states of a single quantum dot can be used together with its optical trion transitions to form a spin-photon interface between a stationary (the spin) and a flying (the photon) quantum bit. Besides long coherence times of the spin state itself, the limiting decoherence mechanisms of the trion states are of central importance. We investigate here in time-resolved resonance fluorescence the electron and trion dynamics in a single self-assembled quantum dot in an applied magnetic field of up to $B = 10\,$T. The quantum dot is only weakly coupled to an electron reservoir with tunneling rates of about $1\,$ms$^{-1}$. Using this sample structure, we can measure, in addition to the spin-flip rate of the electron and the spin-flip Raman rate of the trion transition, the Auger recombination process, that scatters an Auger electron into the conduction band. The Auger effect destroys the radiative trion transition and leaves the quantum dot empty until an electron tunnels from the reservoir into the dot. The Auger recombination rate decreases by a factor of three from $γがんま_A=3\,μみゅー$s$^{-1}$ down to $1\,μみゅー$s$^{-1}$ in an applied magnetic field of $10\,$T in Faraday geometry. The combination of an Auger recombination event with subsequent electron tunneling from the reservoir can flip the electron spin and thus constitutes a previously unaccounted mechanism that limits spin coherence, an important resource for quantum technologies. △ Less

Submitted 23 October, 2021; originally announced October 2021.

In-flight distribution of an electron within a surface acoustic wave

Authors: Hermann Edlbauer, Junliang Wang, Shunsuke Ota, Americ Richard, Baptiste Jadot, Pierre-André Mortemousque, Yuma Okazaki, Shuji Nakamura, Tetsuo Kodera, Nobu-Hisa Kaneko, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Tristan Meunier, Christopher Bäuerle, Shintaro Takada

Abstract: Surface acoustic waves (SAW) have large potential to realize quantum-optics-like experiments with single flying electrons employing their spin or charge degree of freedom. For such quantum applications, highly efficient trapping of the electron in a specific moving quantum dot (QD) of a SAW train plays a key role. Probabilistic transport over multiple moving minima would cause uncertainty in synch… ▽ More Surface acoustic waves (SAW) have large potential to realize quantum-optics-like experiments with single flying electrons employing their spin or charge degree of freedom. For such quantum applications, highly efficient trapping of the electron in a specific moving quantum dot (QD) of a SAW train plays a key role. Probabilistic transport over multiple moving minima would cause uncertainty in synchronisation that is detrimental for coherence of entangled flying electrons and in-flight quantum operations. It is thus of central importance to identify the device parameters enabling electron transport within a single SAW minimum. A detailed experimental investigation of this aspect is so far missing. Here we fill this gap by demonstrating time-of-flight measurements for a single electron that is transported via a SAW train between distant stationary QDs. Our measurements reveal the in-flight distribution of the electron within the moving acousto-electric quantum dots of the SAW train. Increasing the acousto-electric amplitude, we observe the threshold necessary to confine the flying electron at a specific, deliberately chosen SAW minimum. Investigating the effect of a barrier along the transport channel, we also benchmark the robustness of SAW-driven electron transport against stationary potential variations. Our results pave the way for highly controlled transport of electron qubits in a SAW-driven platform for quantum experiments. △ Less

Submitted 24 September, 2021; v1 submitted 20 July, 2021; originally announced July 2021.

Comments: Main paper: 11 pages, 3 figures, Supplementary material: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 119, 114004 (2021)

Heat-Driven Electron-Motion in a Nanoscale Electronic Circuit

Authors: Shintaro Takada, Giorgos Georgiou, Everton Arrighi, Hermann Edlbauer, Yuma Okazaki, Shuji Nakamura, Arne Ludwig, Andreas D. Wieck, Michihisa Yamamoto, Christopher Bäuerle, Nobu-Hisa Kaneko

Abstract: We study the interaction between two closely spaced but electrically isolated quasi-one-dimensional electrical wires by a drag experiment. In this work we experimentally demonstrate the generation of current in an unbiased (drag) wire, which results from the interactions with a neighboring biased (drive) wire. The direction of the drag current depends on the length of the one-dimensional wire with… ▽ More We study the interaction between two closely spaced but electrically isolated quasi-one-dimensional electrical wires by a drag experiment. In this work we experimentally demonstrate the generation of current in an unbiased (drag) wire, which results from the interactions with a neighboring biased (drive) wire. The direction of the drag current depends on the length of the one-dimensional wire with respect to the position of the barrier in the drag wire. When we additionally form a potential barrier in the drive wire, the direction of the drag current is determined by the relative position of the two barriers. We interpret this behavior in terms of electron excitations by phonon-mediated interactions between the two wires in presence of the electron scattering inside the drive wire. △ Less

Submitted 25 October, 2021; v1 submitted 19 July, 2021; originally announced July 2021.

Comments: Main paper: 10 pages, 4 figures, Supplemental material: 6 pages, 3 figures

Journal ref: J. Phys. Soc. Jpn. 90, 113707 (2021)

Quantum Interference of Identical Photons from Remote GaAs Quantum Dots

Authors: Liang Zhai, Giang N. Nguyen, Clemens Spinnler, Julian Ritzmann, Matthias C. Löbl, Andreas D. Wieck, Arne Ludwig, Alisa Javadi, Richard J. Warburton

Abstract: Photonic quantum technology provides a viable route to quantum communication, quantum simulation, and quantum information processing. Recent progress has seen the realisation of boson sampling using 20 single-photons and quantum key distribution over hundreds of kilometres. Scaling the complexity requires architectures containing multiple photon-sources, photon-counters, and a large number of indi… ▽ More Photonic quantum technology provides a viable route to quantum communication, quantum simulation, and quantum information processing. Recent progress has seen the realisation of boson sampling using 20 single-photons and quantum key distribution over hundreds of kilometres. Scaling the complexity requires architectures containing multiple photon-sources, photon-counters, and a large number of indistinguishable single photons. Semiconductor quantum dots are bright and fast sources of coherent single-photons. For applications, a significant roadblock is the poor quantum coherence upon interfering single photons created by independent quantum dots. Here, we demonstrate two-photon interference with near-unity visibility ($93.0\pm0.8$)\% using photons from two completely separate GaAs quantum dots. The experiment retains all the emission into the zero-phonon-line -- only the weak phonon-sideband is rejected -- and temporal post-selection is not employed. Exploiting the quantum interference, we demonstrate a photonic controlled-not circuit and an entanglement with fidelity ($85.0\pm 1.0$)\% between photons of different origins. The two-photon interference visibility is high enough that the entanglement fidelity is well above the classical threshold. The high mutual-coherence of the photons stems from high-quality materials, a diode-structure, and the relatively large quantum dot size. Our results establish a platform, GaAs QDs, for creating coherent single photons in a scalable way. △ Less

Submitted 14 February, 2023; v1 submitted 7 June, 2021; originally announced June 2021.

Comments: 20 pages, 9 figures, supplementary information included in a separate PDF

Real-time observation of charge-spin cooperative dynamics driven by a nonequilibrium phonon environment

Authors: Kazuyuki Kuroyama, Sadashige Matsuo, Jo Muramoto, Shunsuke Yabunaka, Sasha R. Valentin, Arne Ludwig, Andreas D. Wieck, Yasuhiro Tokura, Seigo Tarucha

Abstract: Quantum dots are recognized as a suitable platform for studying thermodynamic phenomena involving single electronic charges and spins in nano-scale devices. However, such a thermodynamic system is usually driven by electron reservoirs at different temperatures, not by a lattice temperature gradient. We report on experimental observations of charge-spin cooperative dynamics in transitions of two-el… ▽ More Quantum dots are recognized as a suitable platform for studying thermodynamic phenomena involving single electronic charges and spins in nano-scale devices. However, such a thermodynamic system is usually driven by electron reservoirs at different temperatures, not by a lattice temperature gradient. We report on experimental observations of charge-spin cooperative dynamics in transitions of two-electron spin states in a GaAs double quantum dot located in a non-equilibrium phonon environment. Enhancements in the spin-flip processes are observed, originating from phonon excitation combined with the spin-orbit interaction. In addition, due to the spatial gradient of phonon density between the dots, the spin-flip rate during an inter-dot electron tunnel from a hot to a cold dot is more enhanced than in the other direction, resulting in accumulation of parallel spin states in the double dot. △ Less

Submitted 2 June, 2021; originally announced June 2021.

Optically driving the radiative Auger transition

Authors: Clemens Spinnler, Liang Zhai, Giang N. Nguyen, Julian Ritzmann, Andreas D. Wieck, Arne Ludwig, Alisa Javadi, Doris E. Reiter, Paweł Machnikowski, Richard J. Warburton, Matthias C. Löbl

Abstract: In a radiative Auger process, optical decay is accompanied by simultaneous excitation of other carriers. The radiative Auger process gives rise to weak red-shifted satellite peaks in the optical emission spectrum. These satellite peaks have been observed over a large spectral range: in the X-ray emission of atoms; close to visible frequencies on donors in semiconductors and quantum emitters; and a… ▽ More In a radiative Auger process, optical decay is accompanied by simultaneous excitation of other carriers. The radiative Auger process gives rise to weak red-shifted satellite peaks in the optical emission spectrum. These satellite peaks have been observed over a large spectral range: in the X-ray emission of atoms; close to visible frequencies on donors in semiconductors and quantum emitters; and at infrared frequencies as shake-up lines in two-dimensional systems. So far, all the work on the radiative Auger process has focussed on detecting the spontaneous emission. However, the fact that the radiative Auger process leads to photon emission suggests that the transition can also be optically excited. In such an inverted radiative Auger process, excitation would correspond to simultaneous photon absorption and electronic de-excitation. Here, we demonstrate optical driving of the radiative Auger transition on a trion in a semiconductor quantum dot. The radiative Auger and the fundamental transition together form a $Λらむだ$-system. On driving both transitions of this $Λらむだ$-system simultaneously, we observe a reduction of the fluorescence signal by up to $70\%$. Our results demonstrate a type of optically addressable transition connecting few-body Coulomb interactions to quantum optics. The results open up the possibility of carrying out THz spectroscopy on single quantum emitters with all the benefits of optics: coherent laser sources, efficient and fast single-photon detectors. In analogy to optical control of an electron spin, the $Λらむだ$-system between the radiative Auger and the fundamental transitions allows optical control of the emitters' orbital degree of freedom. △ Less

Submitted 7 May, 2021; originally announced May 2021.

Comments: 8 pages, 6 figures

Journal ref: Nature Communications 12, 6575 (2021)

Strong enhancement of heavy-hole Landé factor $q$ in InGaAs symmetric quantum dots revealed by coherent optical spectroscopy

Authors: A. V. Trifonov, I. A. Akimov, L. E. Golub, E. L. Ivchenko, I. A. Yugova, A. N. Kosarev, S. E. Scholz, C. Sgroi, A. Ludwig, A. D. Wieck, D. R. Yakovlev, M. Bayer

Abstract: We reveal the existence of a large in-plane heavy-hole $g$ factor in symmetric self-assembled (001) (In,Ga)As/GaAs quantum dots due to warping of valence band states. This warping dominates over the well-established mechanism associated with a reduced symmetry of quantum dots and the corresponding mixing of heavy-hole and light-hole states. The effect of band warping is manifested in a unique angu… ▽ More We reveal the existence of a large in-plane heavy-hole $g$ factor in symmetric self-assembled (001) (In,Ga)As/GaAs quantum dots due to warping of valence band states. This warping dominates over the well-established mechanism associated with a reduced symmetry of quantum dots and the corresponding mixing of heavy-hole and light-hole states. The effect of band warping is manifested in a unique angular dependence of a trion photon echo signal on the direction of external magnetic field with respect to the sample axes. It results in a uniform magnetic-field-induced optical anisotropy for the entire quantum dot ensemble which is a prerequisite for realization of spin quantum memories and spin-photon entanglement in the ensemble. △ Less

Submitted 25 March, 2021; originally announced March 2021.

Comments: 5 pages, 3 figures, supplementary information: 10 pages, 10 figs

Journal ref: Phys. Rev. B 104, L161405 (2021)

Tuning the mode-splitting of a semiconductor microcavity with uniaxial stress

Authors: Natasha Tomm, Alexander R. Korsch, Alisa Javadi, Daniel Najer, Rüdiger Schott, Sascha R. Valentin, Andreas D. Wieck, Arne Ludwig, Richard J. Warburton

Abstract: A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum technology applications, a method for controlling the mode-splitting is important. In this work we use an open microcavity composed of a "bottom" semiconductor distrib… ▽ More A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum technology applications, a method for controlling the mode-splitting is important. In this work we use an open microcavity composed of a "bottom" semiconductor distributed Bragg reflector (DBR) incorporating an n-i-p heterostructure, paired with a "top" curved dielectric DBR. We measure the mode-splitting as a function of wavelength across the stopband. We demonstrate a reversible in-situ technique to tune the mode-splitting by applying uniaxial stress to the semiconductor DBR. The method exploits the photoelastic effect of the semiconductor materials. We achieve a maximum tuning of $\sim$11 GHz. The stress applied to the heterostructure is determined by observing the photoluminescence of quantum dots embedded in the sample, converting a spectral shift to a stress via deformation potentials. A thorough study of the mode-splitting and its tuning across the stop-band leads to a quantitative understanding of the mechanism behind the results. △ Less

Submitted 18 February, 2021; originally announced February 2021.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. Applied 15, 054061 (2021)

Electroabsorption in gated GaAs nanophotonic waveguides

Authors: Ying Wang, Ravitej Uppu, Xiaoyan Zhou, Camille Papon, Sven Scholz, Andreas D. Wieck, Arne Ludwig, Peter Lodahl, Leonardo Midolo

Abstract: We report on the analysis of electroabsorption in thin GaAs/Al$_{0.3}$Ga$_{0.7}$As nanophotonic waveguides with an embedded $p$-$i$-$n$ junction. By measuring the transmission through waveguides of different lengths, we derive the propagation loss as a function of electric field, wavelength, and temperature. The results are in good agreement with the Franz-Keldysh model of electroabsorption extend… ▽ More We report on the analysis of electroabsorption in thin GaAs/Al$_{0.3}$Ga$_{0.7}$As nanophotonic waveguides with an embedded $p$-$i$-$n$ junction. By measuring the transmission through waveguides of different lengths, we derive the propagation loss as a function of electric field, wavelength, and temperature. The results are in good agreement with the Franz-Keldysh model of electroabsorption extending over 200 meV below the GaAs bandgap, i.e. in the 910--970 nm wavelength range. We find a pronounced residual absorption in forward bias, which we attribute to Fermi-level pinning at the waveguide surface, producing over 20 dBでしべる/mm loss at room temperature. These results are essential for understanding the origin of loss in nanophotonic devices operating in the emission range of self-assembled InAs semiconductor quantum dots, towards the realization of scalable quantum photonic integrated circuits. △ Less

Submitted 11 February, 2021; originally announced February 2021.

Comments: 6 pages, 3 figures

Enhanced spin coherence while displacing electron in a 2D array of quantum dots

Authors: Pierre-André Mortemousque, Baptiste Jadot, Emmanuel Chanrion, Vivien Thiney, Christopher Bäuerle, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Tristan Meunier

Abstract: The ability to shuttle coherently individual electron spins in arrays of quantum dots is a key procedure for the development of scalable quantum information platforms. It allows the use of sparsely populated electron spin arrays, envisioned to efficiently tackle the one- and two-qubit gate challenges. When the electrons are displaced in an array, they are submitted to site-dependent environment in… ▽ More The ability to shuttle coherently individual electron spins in arrays of quantum dots is a key procedure for the development of scalable quantum information platforms. It allows the use of sparsely populated electron spin arrays, envisioned to efficiently tackle the one- and two-qubit gate challenges. When the electrons are displaced in an array, they are submitted to site-dependent environment interactions such as hyperfine coupling with substrate nuclear spins. Here, we demonstrate that the electron multi-directional displacement in a $3\times 3$ array of tunnel coupled quantum dots enhances the spin coherence time via the motional narrowing phenomenon. More specifically, up to 10 configurations are explored by the electrons to study the impact of the displacement on spin dynamics. An increase of the coherence time by a factor up to 10 is observed in case of fast and repetitive displacement. The physical mechanism responsible for the loss of coherence induced by displacement is quantitatively captured by a simple model and its implications on spin coherence properties during the electron displacement are discussed in the context of large-scale quantum circuits. △ Less

Submitted 15 January, 2021; originally announced January 2021.

Comments: 8 pages, 5 figures, 6 supplementary figures

Journal ref: PRX Quantum 2, 030331 (2021)

Bright electrically controllable quantum-dot-molecule devices fabricated by in-situ electron-beam lithography

Authors: Johannes Schall, Marielle Deconinck, Nikolai Bart, Matthias Florian, Martin von Helversen, Christian Dangel, Ronny Schmidt, Lucas Bremer, Frederik Bopp, Isabell Hüllen, Christopher Gies, Dirk Reuter, Andreas D. Wieck, Sven Rodt, Jonathan J. Finley, Frank Jahnke, Arne Ludwig, Stephan Reitzenstein

Abstract: Self-organized semiconductor quantum dots represent almost ideal two-level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close-to-ideal quantum light sources. Coupled quantum dot systems with significantly increased functionality are potentially of even stronger interest since they can be used to host ultra-stable s… ▽ More Self-organized semiconductor quantum dots represent almost ideal two-level systems, which have strong potential to applications in photonic quantum technologies. For instance, they can act as emitters in close-to-ideal quantum light sources. Coupled quantum dot systems with significantly increased functionality are potentially of even stronger interest since they can be used to host ultra-stable singlet-triplet spin qubits for efficient spin-photon interfaces and for a deterministic photonic 2D cluster-state generation. We realize an advanced quantum dot molecule (QDM) device and demonstrate excellent optical properties. The device includes electrically controllable QDMs based on stacked quantum dots in a pin-diode structure. The QDMs are deterministically integrated into a photonic structure with a circular Bragg grating using in-situ electron beam lithography. We measure a photon extraction efficiency of up to (24$\pm$4)% in good agreement with numerical simulations. The coupling character of the QDMs is clearly demonstrated by bias voltage dependent spectroscopy that also controls the orbital couplings of the QDMs and their charge state in quantitative agreement with theory. The QDM devices show excellent single-photon emission properties with a multi-photon suppression of $g^{(2)}(0) = (3.9 \pm 0.5) \cdot 10^{-3}$. These metrics make the developed QDM devices attractive building blocks for use in future photonic quantum networks using advanced nanophotonic hardware. △ Less

Submitted 8 April, 2021; v1 submitted 10 January, 2021; originally announced January 2021.

Optical spin control and coherence properties of acceptor bound holes in strained GaAs

Authors: Xiayu Linpeng, Todd Karin, Mikhail V. Durnev, Mikhail M. Glazov, Rüdiger Schott, Andreas D. Wieck, Arne Ludwig, Kai-Mei C. Fu

Abstract: Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to potentially longer coherence times. Here we demonstrate optical pumping and coherent population trapping for acceptor-bound holes in a strained GaAs epitaxial la… ▽ More Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to potentially longer coherence times. Here we demonstrate optical pumping and coherent population trapping for acceptor-bound holes in a strained GaAs epitaxial layer. We find $μみゅー$s-scale longitudinal spin relaxation time T$_1$ and an inhomogeneous dephasing time T$_2^*$ of $\sim$7~ns. We attribute the spin relaxation mechanism to a combination effect of a hole-phonon interaction through the deformation potentials and a heavy-hole light-hole mixing in an in-plane magnetic field. We attribute the short T$_2^*$ to g-factor broadening due to strain inhomogeneity. T$_1$ and T$_2^*$ are quantitatively calculated based on these mechanisms and compared with the experimental results. While the hyperfine-mediated decoherence is mitigated, our results highlight the important contribution of strain to relaxation and dephasing of acceptor-bound hole spins. △ Less

Submitted 13 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. B 103, 115412 (2021)

Suppression of surface-related loss in a gated semiconductor microcavity

Authors: Daniel Najer, Natasha Tomm, Alisa Javadi, Alexander R. Korsch, Benjamin Petrak, Daniel Riedel, Vincent Dolique, Sascha R. Valentin, Rüdiger Schott, Andreas D. Wieck, Arne Ludwig, Richard J. Warburton

Abstract: We present a surface passivation method that reduces surface-related losses by almost two orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector (DBR) with radius $\sim 10$ $μみゅー$m paired with a GaAs-based heterostructure. The heterostructure consists of a semiconductor DBR followed by an n-i-p diode with a layer… ▽ More We present a surface passivation method that reduces surface-related losses by almost two orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector (DBR) with radius $\sim 10$ $μみゅー$m paired with a GaAs-based heterostructure. The heterostructure consists of a semiconductor DBR followed by an n-i-p diode with a layer of quantum dots in the intrinsic region. Free-carrier absorption in the highly doped n- and p-layers is minimized by positioning them close to a node of the vacuum electromagnetic-field. The surface, however, resides at an anti-node of the vacuum field and results in significant loss. These losses are much reduced by surface passivation. The strong dependence on wavelength implies that the main effect of the surface passivation is to eliminate the surface electric field, thereby quenching below-bandgap absorption via a Franz-Keldysh-like effect. An additional benefit is that the surface passivation reduces scattering at the GaAs surface. These results are important in other nano-photonic devices which rely on a GaAs-vacuum interface to confine the electromagnetic field. △ Less

Submitted 17 February, 2021; v1 submitted 9 December, 2020; originally announced December 2020.

Comments: 11 pages, 8 figures

Journal ref: Phys. Rev. Applied 15, 044004 (2021)

Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots

Authors: Motoya Shinozaki, Yui Muto, Takahito Kitada, Takashi Nakajima, Matthieu R. Delbecq, Jun Yoneda, Kenta Takeda, Akito Noiri, Takumi Ito, Arne Ludwig, Andreas D. Wieck, Seigo Tarucha, Tomohiro Otsuka

Abstract: We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the fl… ▽ More We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the flicker noise is investigated and compared to the charge sensor sensitivity. We point out that the dominant component of the readout noise changes by the measurement integration time. △ Less

Submitted 12 January, 2021; v1 submitted 7 December, 2020; originally announced December 2020.

Journal ref: Applied Physics Express 14, 035002 (2021)

Wafer-Scale Epitaxial Modulation of Quantum Dot Density

Authors: N. Bart, C. Dangel, P. Zajac, N. Spitzer, J. Ritzmann, M. Schmidt, H. G. Babin, R. Schott, S. R. Valentin, S. Scholz, Y. Wang, R. Uppu, D. Najer, M. C. Löbl, N. Tomm, A. Javadi, N. O. Antoniadis, L. Midolo, K. Müller, R. J. Warburton, P. Lodahl, A. D. Wieck, J. J. Finley, A. Ludwig

Abstract: Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-density for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be u… ▽ More Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-density for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be used to modulate the density of optically active QDs in one- and two- dimensional patterns, while still retaining excellent quality. We find that material thickness gradients during layer-by-layer growth result in surface roughness modulations across the whole wafer. Growth on such templates strongly influences the QD nucleation probability. We obtain density modulations between 1 and 10 QDs/$μみゅーm^{2}$ and periods ranging from several millimeters down to at least a few hundred microns. This novel method is universal and expected to be applicable to a wide variety of different semiconductor material systems. We apply the method to enable growth of ultra-low noise QDs across an entire 3-inch semiconductor wafer. △ Less

Submitted 9 December, 2021; v1 submitted 20 November, 2020; originally announced November 2020.

Suppression of nuclear spin fluctuations in an InGaAs quantum dot ensemble by GHz-pulsed optical excitation

Authors: E. Evers, N. E. Kopteva, I. A. Yugova, D. R. Yakovlev, D. Reuter, A. D. Wieck, M. Bayer, A. Greilich

Abstract: The coherent electron spin dynamics of an ensemble of singly charged (In,Ga)As/GaAs quantum dots in a transverse magnetic field is driven by periodic optical excitation at 1 GHz repetition frequency. Despite the strong inhomogeneity of the electron $g$ factor, the spectral spread of optical transitions, and the broad distribution of nuclear spin fluctuations, we are able to push the whole ensemble… ▽ More The coherent electron spin dynamics of an ensemble of singly charged (In,Ga)As/GaAs quantum dots in a transverse magnetic field is driven by periodic optical excitation at 1 GHz repetition frequency. Despite the strong inhomogeneity of the electron $g$ factor, the spectral spread of optical transitions, and the broad distribution of nuclear spin fluctuations, we are able to push the whole ensemble of excited spins into a single Larmor precession mode that is commensurate with the laser repetition frequency. Furthermore, we demonstrate that an optical detuning of the pump pulses from the probed optical transitions induces a directed dynamic nuclear polarization and leads to a discretization of the total magnetic field acting on the electron ensemble. Finally, we show that the highly periodic optical excitation can be used as universal tool for strongly reducing the nuclear spin fluctuations and preparation of a robust nuclear environment for subsequent manipulation of the electron spins, also at varying operation frequencies. △ Less

Submitted 19 April, 2021; v1 submitted 13 November, 2020; originally announced November 2020.

Comments: 14 pages, 7 figures

Journal ref: npj Quantum Inf. 7, 60 (2021)

Probabilistic teleportation of a quantum dot spin qubit

Authors: Y. Kojima, T. Nakajima, A. Noiri, J. Yoneda, T. Otsuka, K. Takeda, S. Li, S. D. Bartlett, A. Ludwig, A. D. Wieck, S. Tarucha

Abstract: Electron spin s in semiconductor quantum dot s have been intensively studied for implementing quantum computation and high fidelity single and two qubit operation s have recently been achieved . Quantum teleportation is a three qubit protocol exploiting quantum entanglement and it serv es as a n essential primitive for more sophisticated quantum algorithm s Here, we demonstrate a scheme for quantu… ▽ More Electron spin s in semiconductor quantum dot s have been intensively studied for implementing quantum computation and high fidelity single and two qubit operation s have recently been achieved . Quantum teleportation is a three qubit protocol exploiting quantum entanglement and it serv es as a n essential primitive for more sophisticated quantum algorithm s Here, we demonstrate a scheme for quantum teleportation based on direct Bell measurement for a single electron spin qubit in a triple quantum dot utilizing the Pauli exclusion principle to create and detect maximally entangled state s . T he single spin polarization is teleported from the input qubit to the output qubit with a fidelity of 0.9 1 We find this fidelity is primarily limited by singlet triplet mixing which can be improved by optimizing the device parameters Our results may be extended to quantum algorithms with a larger number of se miconductor spin qubit s △ Less

Submitted 9 November, 2020; originally announced November 2020.

Journal ref: npj Quantum Information 7, 68 (2021)

Internal Photo Effect from a Single Quantum Emitter

Authors: Pia Lochner, Jens Kerski, Annika Kurzmann, Andreas D. Wieck, Arne Ludwig, Martin Geller, Axel Lorke

Abstract: We demonstrate by time-resolved resonance fluorescence measurements on a single self-assembled quantum dot an internal photo-effect that emits electrons from the dot by an intra-band excitation. We find a linear dependence of the optically generated emission rate on the excitation intensity and use a rate equation model to deduce the involved rates. The emission rate is tunable over several orders… ▽ More We demonstrate by time-resolved resonance fluorescence measurements on a single self-assembled quantum dot an internal photo-effect that emits electrons from the dot by an intra-band excitation. We find a linear dependence of the optically generated emission rate on the excitation intensity and use a rate equation model to deduce the involved rates. The emission rate is tunable over several orders of magnitude by adjusting the excitation intensity. Our findings show that a process that is well known in single atom spectroscopy (i.e. photo ionization) can also be observed in the solid state. The results also quantify an important, but mostly neglected, mechanism that may fundamentally limit the coherence times in solid-state quantum optical devices. △ Less

Submitted 21 October, 2020; originally announced October 2020.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B 103, 075426 (2021)

Influence of molecular beam effusion cell quality on optical and electrical properties of quantum dots and quantum wells

Authors: G. N. Nguyen, A. R. Korsch, M. Schmidt, C. Ebler, P. A. Labud, R. Schott, P. Lochner, F. Brinks, A. D. Wieck, A. Ludwig

Abstract: Quantum dot heterostructures with excellent low-noise properties became possible with high purity materials recently. We present a study on molecular beam epitaxy grown quantum wells and quantum dots with a contaminated aluminum evaporation cell, which introduced a high amount of impurities, perceivable in anomalies in optical and electrical measurements. We describe a way of addressing this probl… ▽ More Quantum dot heterostructures with excellent low-noise properties became possible with high purity materials recently. We present a study on molecular beam epitaxy grown quantum wells and quantum dots with a contaminated aluminum evaporation cell, which introduced a high amount of impurities, perceivable in anomalies in optical and electrical measurements. We describe a way of addressing this problem and find that reconditioning the aluminum cell by overheating can lead to a full recovery of the anomalies in photoluminescence and capacitance-voltage measurements, leading to excellent low noise heterostructures. Furthermore, we propose a method to sense photo-induced trap charges using capacitance-voltage spectroscopy on self-assembled quantum dots. Excitation energy-dependent ionization of defect centers leads to shifts in capacitance-voltage spectra which can be used to determine the charge density of photo-induced trap charges via 1D band structure simulations. This method can be performed on frequently used quantum dot diode structures. △ Less

Submitted 30 September, 2020; v1 submitted 29 September, 2020; originally announced September 2020.

Comments: 9 pages, 10 figuers

Journal ref: Journal of Crystal Growth 550 (2020) 125884

A coherent spin-photon interface with waveguide induced cycling transitions

Authors: Martin Hayhurst Appel, Alexey Tiranov, Alisa Javadi, Matthias Christian Löbl, Ying Wang, Sven Scholz, Andreas Dirk Wieck, Arne Ludwig, Richard John Warburton, Peter Lodahl

Abstract: Solid-state quantum dots are promising candidates for efficient light-matter interfaces connecting internal spin degrees of freedom to the states of emitted photons. However, selection rules prevent the combination of efficient spin control and optical cyclicity in this platform. By utilizing a photonic crystal waveguide we here experimentally demonstrate optical cyclicity up to $\approx15$ throug… ▽ More Solid-state quantum dots are promising candidates for efficient light-matter interfaces connecting internal spin degrees of freedom to the states of emitted photons. However, selection rules prevent the combination of efficient spin control and optical cyclicity in this platform. By utilizing a photonic crystal waveguide we here experimentally demonstrate optical cyclicity up to $\approx15$ through photonic state engineering while achieving high fidelity spin initialization and coherent optical spin control. These capabilities pave the way towards scalable multi-photon entanglement generation and on-chip spin-photon gates. △ Less

Submitted 27 June, 2020; originally announced June 2020.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 126, 013602 (2021)

Coherent beam splitting of flying electrons driven by a surface acoustic wave

Authors: R. Ito, S. Takada, A. Ludwig, A. D. Wieck, S. Tarucha, M. Yamamoto

Abstract: We develop a coherent beam splitter for single electrons driven through two tunnel-coupled quantum wires by surface acoustic waves (SAWs). The output current through each wire oscillates with gate voltages to tune the tunnel-coupling and potential difference between the wires. This oscillation is assigned to coherent electron tunneling motion that can be used to encode a flying qubit and is well r… ▽ More We develop a coherent beam splitter for single electrons driven through two tunnel-coupled quantum wires by surface acoustic waves (SAWs). The output current through each wire oscillates with gate voltages to tune the tunnel-coupling and potential difference between the wires. This oscillation is assigned to coherent electron tunneling motion that can be used to encode a flying qubit and is well reproduced by numerical calculations of time evolution of the SAW-driven single electrons. The oscillation visibility is currently limited to about 3%, but robust against decoherence, indicating that the SAW-electron can serve as a novel platform for a solid-state flying qubit. △ Less

Submitted 24 April, 2020; originally announced April 2020.

Comments: 5+3 pages, 4+2 figures

Journal ref: Phys. Rev. Lett. 126, 070501 (2021)

Distant spin entanglement via fast and coherent electron shuttling

Authors: Baptiste Jadot, Pierre-André Mortemousque, Emmanuel Chanrion, Vivien Thiney, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Christopher Bäuerle, Tristan Meunier

Abstract: In the quest for large-scale quantum computing, networked quantum computers offer a natural path towards scalability. Now that nearest neighbor entanglement has been demonstrated for electron spin qubits in semiconductors, on-chip long distance entanglement brings versatility to connect quantum core units. Here we realize the controlled and coherent transfer of a pair of entangled electron spins,… ▽ More In the quest for large-scale quantum computing, networked quantum computers offer a natural path towards scalability. Now that nearest neighbor entanglement has been demonstrated for electron spin qubits in semiconductors, on-chip long distance entanglement brings versatility to connect quantum core units. Here we realize the controlled and coherent transfer of a pair of entangled electron spins, and demonstrate their remote entanglement when separated by a distance of 6 microns. Driven by coherent spin rotations induced by the electron displacement, high-contrast spin quantum interferences are observed and are a signature of the preservation of the entanglement all along the displacement procedure. This work opens the route towards fast on-chip deterministic interconnection of remote quantum bits in semiconductor quantum circuits. △ Less

Submitted 6 April, 2020; originally announced April 2020.

Comments: Main text of 7 pages with 4 figures. Supplementary information of 4 pages with 3 figures

Journal ref: Nature Nanotechnology (2021)

Effect of electric current on optical orientation of electrons in AlGaAs/GaAs heterostructure

Authors: O. S. Ken, E. A. Zhukov, I. A. Akimov, V. L. Korenev, N. E. Kopteva, I. V. Kalitukha, V. F. Sapega, A. D. Wieck, A. Ludwig, R. Schott, Yu. G. Kusrayev, D. R. Yakovlev, M. Bayer

Abstract: The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the… ▽ More The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the heavy holes localized at the heterointerface with photoexcited electrons attracted to the heterointerface from the GaAs layer. Two lines with significantly different decay times constitute the H-band: a short-lived high-energy one and a long-lived low-energy one. The high-energy line originates from recombination of electrons freely moving along the structure plane, while the low-energy one is due to recombination of donor-bound electrons near the interface. Application of the lateral electric field of ~ 100-200 V/cm results in a quenching of both lines. This quenching is due to a decrease of electron concentration near the heterointerface as a result of a photocurrent-induced heating of electrons in the GaAs layer. On the contrary, electrons near the heterointerface are effectively cooled, so the donors near the interface are not completely empty up to ~ 100 V/cm, which is in stark contrast with the case of bulk materials. The optical spin polarization of the donor-bound electrons near the heterointerface weakly depends on the electric field. Their polarization kinetics is determined by the spin dephasing in the hyperfine fields of the lattice nuclei. The long spin memory time (> 40 ns) can be associated with suppression of the Bir-Aronov-Pikus mechanism of spin relaxation for electrons. △ Less

Submitted 18 March, 2020; originally announced March 2020.

Comments: 21 pages, 7 figures

Journal ref: Phys. Rev. B 102, 045302 (2020)

Low-Noise GaAs Quantum Dots for Quantum Photonics

Authors: Liang Zhai, Matthias C. Löbl, Giang N. Nguyen, Julian Ritzmann, Alisa Javadi, Clemens Spinnler, Andreas D. Wieck, Arne Ludwig, Richard J. Warburton

Abstract: Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons -- bandwidth-matched to an atomic quantum-memory -- and the generation of photon cluster states, a resource in quantum communication and measurement-based quantum computing. GaAs quantum dots in AlGaAs can be matched in frequency to a rubidium-bas… ▽ More Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons -- bandwidth-matched to an atomic quantum-memory -- and the generation of photon cluster states, a resource in quantum communication and measurement-based quantum computing. GaAs quantum dots in AlGaAs can be matched in frequency to a rubidium-based photon memory, and have potentially improved electron spin coherence compared to the widely used InGaAs quantum dots. However, their charge stability and optical linewidths are typically much worse than for their InGaAs counterparts. Here, we embed GaAs quantum dots into an $n$-$i$-$p$-diode specially designed for low-temperature operation. We demonstrate ultra-low noise behaviour: charge control via Coulomb blockade, close-to lifetime-limited linewidths, and no blinking. We observe high-fidelity optical electron-spin initialisation and long electron-spin lifetimes for these quantum dots. Our work establishes a materials platform for low-noise quantum photonics close to the red part of the spectrum. △ Less

Submitted 24 September, 2020; v1 submitted 28 February, 2020; originally announced March 2020.

Comments: (19 pages, 12 figures, 1 table)

Journal ref: Nature Communications, 11, 4745 (2020)

Electrostatic potential shape of gate defined quantum point contacts

Authors: Max Geier, Jaan Freudenfeld, Jorge T. Silva, Vladimir Umansky, Dirk Reuter, Andreas D. Wieck, Piet W. Brouwer, Stefan Ludwig

Abstract: Quantum point contacts (QPC) are fundamental building blocks of nanoelectronic circuits. For their emission dynamics as well as for interaction effects such as the 0.7-anomaly the details of the electrostatic potential are important, but the precise potential shapes are usually unknown. Here, we measure the one-dimensional subband spacings of various QPCs as a function of their conductance and com… ▽ More Quantum point contacts (QPC) are fundamental building blocks of nanoelectronic circuits. For their emission dynamics as well as for interaction effects such as the 0.7-anomaly the details of the electrostatic potential are important, but the precise potential shapes are usually unknown. Here, we measure the one-dimensional subband spacings of various QPCs as a function of their conductance and compare our findings with models of lateral parabolic versus hard wall confinement. We find that a gate-defined QPC near pinch-off is compatible with the parabolic saddle point scenario. However, as the number of populated subbands is increased Coulomb screening flattens the potential bottom and a description in terms of a finite hard wall potential becomes more realistic. △ Less

Submitted 18 September, 2020; v1 submitted 27 February, 2020; originally announced February 2020.

Comments: 7+2 pager, 7 figures, v2: published version (minor changes)

Journal ref: Phys. Rev. B 101, 165429 (2020)

Coherence of a driven electron spin qubit actively decoupled from quasi-static noise

Authors: Takashi Nakajima, Akito Noiri, Kento Kawasaki, Jun Yoneda, Peter Stano, Shinichi Amaha, Tomohiro Otsuka, Kenta Takeda, Matthieu R. Delbecq, Giles Allison, Arne Ludwig, Andreas D. Wieck, Daniel Loss, Seigo Tarucha

Abstract: The coherence of electron spin qubits in semiconductor quantum dots suffers mostly from low-frequency noise. During the last decade, efforts have been devoted to mitigate such noise by material engineering, leading to substantial enhancement of the spin dephasing time for an idling qubit. However, the role of the environmental noise during spin manipulation, which determines the control fidelity,… ▽ More The coherence of electron spin qubits in semiconductor quantum dots suffers mostly from low-frequency noise. During the last decade, efforts have been devoted to mitigate such noise by material engineering, leading to substantial enhancement of the spin dephasing time for an idling qubit. However, the role of the environmental noise during spin manipulation, which determines the control fidelity, is less understood. We demonstrate an electron spin qubit whose coherence in the driven evolution is limited by high-frequency charge noise rather than the quasi-static noise inherent to any semiconductor device. We employed a feedback control technique to actively suppress the latter, demonstrating a $πぱい$-flip gate fidelity as high as $99.04\pm 0.23\,\%$ in a gallium arsenide quantum dot. We show that the driven-evolution coherence is limited by the longitudinal noise at the Rabi frequency, whose spectrum resembles the $1/f$ noise observed in isotopically purified silicon qubits. △ Less

Submitted 13 March, 2020; v1 submitted 9 January, 2020; originally announced January 2020.

Comments: 10 pages, 7 figures

Journal ref: Phys. Rev. X 10, 011060 (2020)