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Identification of soft modes across the commensurate-to-incommensurate charge density wave transition in 1$T$-TaSe$_2$
Authors:
M. Ruggeri,
D. Wolverson,
V. Romano,
G. Cerullo,
C. J. Sayers,
G. D'Angelo
Abstract:
1$T$-TaSe$_2$ is a prototypical charge density wave (CDW) material for which electron-phonon coupling and associated lattice distortion play an important role in driving and stabilizing the CDW phase. Here, we investigate the lattice dynamics of bulk 1$T$-TaSe$_2$ using angle-resolved ultralow wavenumber Raman spectroscopy down to 10 cm$^{-1}$. Our high-resolution spectra allow us to identify at l…
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1$T$-TaSe$_2$ is a prototypical charge density wave (CDW) material for which electron-phonon coupling and associated lattice distortion play an important role in driving and stabilizing the CDW phase. Here, we investigate the lattice dynamics of bulk 1$T$-TaSe$_2$ using angle-resolved ultralow wavenumber Raman spectroscopy down to 10 cm$^{-1}$. Our high-resolution spectra allow us to identify at least 27 Raman-active modes in the commensurate (CCDW) phase. Contrary to other layered materials, we do not find evidence of interlayer breathing or shear modes, suggestive of $AA$ stacking in the bulk, or sufficiently weak interlayer coupling. Polarization dependence of the mode intensities allows the assignment of their symmetry, which is supported by first-principles calculations of the phonons for the bulk structure using density functional theory. A detailed temperature dependence in the range $T$ = 80 - 500 K allows us to identify soft modes associated with the CDW superlattice. Upon entering the incommensurate (ICCDW) phase above 473 K, we observe a dramatic loss of resolution of all modes, and significant linewidth broadening associated with a reduced phonon lifetime as the charge-order becomes incommensurate with the lattice.
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Submitted 20 May, 2024;
originally announced May 2024.
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Resonance-Induced Anomalies in Temperature-Dependent Raman Scattering of PdSe$_{2}$
Authors:
Omar Abdul-Aziz,
Daniel Wolverson,
Charles Sayers,
Ettore Carpene,
Fulvio Parmigiani,
Hamoon Hedayat,
Paul H. M. van Loosdrecht
Abstract:
We report a comprehensive Raman study of the phonon behaviour in PdSe$_2$ in the temperature range of 5 K to 300 K. A remarkable change in the Raman spectrum is observed at 120 K: a significant enhancement of the out-of-plane phonon A$^{1}_{g}$ mode, accompanied by a suppression of the in-plane A$^{2}_{g}$ and B$^{2}_{1g}$ modes. This intriguing behavior is attributed to a temperature-dependent re…
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We report a comprehensive Raman study of the phonon behaviour in PdSe$_2$ in the temperature range of 5 K to 300 K. A remarkable change in the Raman spectrum is observed at 120 K: a significant enhancement of the out-of-plane phonon A$^{1}_{g}$ mode, accompanied by a suppression of the in-plane A$^{2}_{g}$ and B$^{2}_{1g}$ modes. This intriguing behavior is attributed to a temperature-dependent resonant excitation effect. The results are supported by density functional theory (DFT) calculations, which demonstrate that the electron-phonon coupling for the phonon modes varies and is strongly associated with the relevant electronic states. Furthermore, nonlinear frequency shifts are identified in all modes, indicating the decay of an optical phonon into multiple acoustic phonons. The study of Raman emission reported here, complemented by linear optical spectroscopy, reveals an unexpected scenario for the vibrational properties of PdSe$_2$ that holds substantial promise for future applications in PdSe$_2$-based optoelectronics.
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Submitted 15 May, 2024;
originally announced May 2024.
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Exploring the Charge Density Wave phase of 1$T$-TaSe$_2$: Mott or Charge-transfer Gap?
Authors:
C. J. Sayers,
G. Cerullo,
Y. Zhang,
C. E. Sanders,
R. T. Chapman,
A. S. Wyatt,
G. Chatterjee,
E. Springate,
D. Wolverson,
E. Da Como,
E. Carpene
Abstract:
1$T$-TaSe$_2$ is widely believed to host a Mott metal-insulator transition in the charge density wave (CDW) phase according to the spectroscopic observation of a band gap that extends across all momentum space. Previous investigations inferred that the occurrence of the Mott phase is limited to the surface only of bulk specimens, but recent analysis on thin samples revealed that the Mott-like beha…
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1$T$-TaSe$_2$ is widely believed to host a Mott metal-insulator transition in the charge density wave (CDW) phase according to the spectroscopic observation of a band gap that extends across all momentum space. Previous investigations inferred that the occurrence of the Mott phase is limited to the surface only of bulk specimens, but recent analysis on thin samples revealed that the Mott-like behavior, observed in the monolayer, is rapidly suppressed with increasing thickness. Here, we report combined time- and angle-resolved photoemission spectroscopy and theoretical investigations of the electronic structure of 1$T$-TaSe$_2$. Our experimental results confirm the existence of a state above $E_F$, previously ascribed to the upper Hubbard band, and an overall band gap of $\sim 0.7$ eV at $\overlineΓ$. However, supported by density functional theory calculations, we demonstrate that the origin of this state and the gap rests on band structure modifications induced by the CDW phase alone, without the need for Mott correlation effects.
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Submitted 10 March, 2023;
originally announced March 2023.
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Spin-order-dependent magneto-elastic coupling in two dimensional antiferromagnetic MnPSe$_3$ observed through Raman spectroscopy
Authors:
Daniel J. Gillard,
Daniel Wolverson,
Oscar M. Hutchings,
Alexander I. Tartakovskii
Abstract:
Layered antiferromagnetic materials have emerged as a novel subset of the two-dimensional family providing a highly accessible regime with prospects for layer-number-dependent magnetism. Furthermore, transition metal phosphorous trichalcogenides, MPX3 (M = transition metal; X = chalcogen) provide a platform for investigating fundamental interactions between magnetic and lattice degrees of freedom…
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Layered antiferromagnetic materials have emerged as a novel subset of the two-dimensional family providing a highly accessible regime with prospects for layer-number-dependent magnetism. Furthermore, transition metal phosphorous trichalcogenides, MPX3 (M = transition metal; X = chalcogen) provide a platform for investigating fundamental interactions between magnetic and lattice degrees of freedom providing new insights for developing fields of spintronics and magnonics. Here, we use a combination of temperature dependent Raman spectroscopy and density functional theory to explore magnetic-ordering-dependent interactions between the manganese spin degree of freedom and lattice vibrations of the non-magnetic sub-lattice via a Kramers-Anderson super-exchange pathway in both bulk, and few-layer, manganese phosphorous triselenide (MnPSe$_3$). We observe a nonlinear temperature dependent shift of phonon modes predominantly associated with the non-magnetic sub-lattice, revealing their non-trivial spin-phonon coupling below the N{é}el temperature at 74 K, allowing us to extract mode-specific spin-phonon coupling constants.
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Submitted 8 January, 2024; v1 submitted 9 March, 2023;
originally announced March 2023.
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Spectrally resolving the phase and amplitude of coherent phonons in the charge density wave state of 1$T$-TaSe$_2$
Authors:
Charles J. Sayers,
Stefano Dal Conte,
Daniel Wolverson,
Christoph Gadermaier,
Giulio Cerullo,
Ettore Carpene,
Enrico Da Como
Abstract:
The excitation and detection of coherent phonons has given unique insights into condensed matter, in particular for materials with strong electron-phonon coupling. We report a study of coherent phonons in the layered charge density wave (CDW) compound 1$T$-TaSe$_2$ performed using transient broadband reflectivity spectroscopy, in the photon energy range 1.75-2.65 eV. Several intense and long lasti…
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The excitation and detection of coherent phonons has given unique insights into condensed matter, in particular for materials with strong electron-phonon coupling. We report a study of coherent phonons in the layered charge density wave (CDW) compound 1$T$-TaSe$_2$ performed using transient broadband reflectivity spectroscopy, in the photon energy range 1.75-2.65 eV. Several intense and long lasting (> 20 ps) oscillations, arising from the CDW superlattice reconstruction, are observed allowing for detailed analysis of the spectral dependence of their amplitude and phase. We find that for energies above 2.4 eV, where transitions involve Ta d-bands, the CDW amplitude mode at 2.19 THz dominates the coherent response. At lower energies, instead, beating arises between additional frequencies, with a particularly intense mode at 2.95 THz. Interestingly, our spectral analysis reveals a $π$ phase shift at 2.4 eV. Results are discussed considering the selective coupling of specific modes to energy bands involved in the optical transitions seen in steady-state reflectivity. The work demonstrates how coherent phonon spectroscopy can distinguish and resolve optical states strongly coupled to the CDW order and provide additional information normally hidden in conventional steady-state experiments.
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Submitted 31 May, 2022;
originally announced June 2022.
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Using in-plane anisotropy to engineer Janus monolayers of rhenium dichalcogenides
Authors:
Nourdine Zibouche,
Surani M. Gunasekera,
Daniel Wolverson,
Marcin Mucha-Kruczynski
Abstract:
The new class of Janus two-dimensional (2D) transition-metal dichalcogenides with two different interfaces are currently gaining increasing attention due to their distinct properties different from the typical 2D materials. Here, we show that in-plane anisotropy of a 2D atomic crystal, like ReS$_{2}$ or ReSe$_{2}$, allows formation of a large number of inequivalent Janus monolayers. We use first-p…
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The new class of Janus two-dimensional (2D) transition-metal dichalcogenides with two different interfaces are currently gaining increasing attention due to their distinct properties different from the typical 2D materials. Here, we show that in-plane anisotropy of a 2D atomic crystal, like ReS$_{2}$ or ReSe$_{2}$, allows formation of a large number of inequivalent Janus monolayers. We use first-principles calculations to investigate the structural stability of 29 distinct ReX$_{2-x}$Y$_{x}$ ($\mathrm{X,Y \in \{S,Se\}}$) structures, which can be obtained by selective exchange of exposed chalcogens in a ReX$_{2}$ monolayer. We also examine the electronic properties and work function of the most stable Janus monolayers and show that the large number of inequivalent structures provides a way to engineer spin-orbit splitting of the electronic bands. We find that the breaking of inversion symmetry leads to sizable spin splittings and spontaneous diople moments than are larger than those in other Janus dichalcogenides. Moreover, our caluclations suggest that the work function of the Janus monolayers can be tuned by varying the content of the substituting chalcogen. Our work demonstrates that in-plane anisotropy provides additional flexibility in sub-layer engineering of 2D atomic crystals.
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Submitted 19 May, 2022; v1 submitted 31 August, 2021;
originally announced September 2021.
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Site-specific symmetry sensitivity of angle-resolved photoemission spectroscopy in layered palladium diselenide
Authors:
M. Cattelan,
C. J. Sayers,
D. Wolverson,
E. Carpene
Abstract:
Two-dimensional (2D) materials with puckered layer morphology are promising candidates for next-generation opto-electronics devices owing to their anisotropic response to external perturbations and wide band gap tunability with the number of layers. Among them, PdSe2 is an emerging 2D transition-metal dichalcogenide with band gap ranging from 1.3 eV in the monolayer to a predicted semimetallic beh…
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Two-dimensional (2D) materials with puckered layer morphology are promising candidates for next-generation opto-electronics devices owing to their anisotropic response to external perturbations and wide band gap tunability with the number of layers. Among them, PdSe2 is an emerging 2D transition-metal dichalcogenide with band gap ranging from 1.3 eV in the monolayer to a predicted semimetallic behavior in the bulk. Here we use angle-resolved photoemission spectroscopy to explore the electronic band structure of PdSe2 with energy and momentum resolution. Our measurements reveal the semiconducting nature of the bulk. Furthermore, constant binding-energy maps of reciprocal space display a remarkable site-specific sensitivity to the atomic arrangement and its symmetry. Supported by density functional theory calculations, we ascribe this effect to the inherent orbital character of the electronic band structure. These results not only provide a deeper understanding of the electronic configuration of PdSe2, but also establish additional capabilities of photoemission spectroscopy.
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Submitted 2 July, 2021;
originally announced July 2021.
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Interplay of crystal thickness and in-plane anisotropy and evolution of quasi-one dimensional electronic character in ReSe$_{2}$
Authors:
Lewis S. Hart,
Surani M. Gunasekera,
James L. Webb,
Marcin Mucha-Kruczynski,
José Avila,
María C. Asensio,
Daniel Wolverson
Abstract:
We study the valence band structure of ReSe$_{2}$ crystals with varying thickness down to a single layer using nanoscale angle-resolved photoemission spectroscopy and density functional theory. The width of the top valence band in the direction perpendicular to the rhenium chains decreases with decreasing number of layers, from 280 meV for the bulk to 61 meV for monolayer. This demonstrates increa…
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We study the valence band structure of ReSe$_{2}$ crystals with varying thickness down to a single layer using nanoscale angle-resolved photoemission spectroscopy and density functional theory. The width of the top valence band in the direction perpendicular to the rhenium chains decreases with decreasing number of layers, from 280 meV for the bulk to 61 meV for monolayer. This demonstrates increase of in-plane anisotropy induced by changes in the interlayer coupling and suggests progressively more one-dimensional character of electronic states in few-layer rhenium dichalcogenides.
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Submitted 10 August, 2021; v1 submitted 23 December, 2020;
originally announced December 2020.
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Excitonic and lattice contributions to the charge density wave in 1T-TiSe$_2$ revealed by a phonon bottleneck
Authors:
Hamoon Hedayat,
Charles J. Sayers,
Davide Bugini,
Claudia Dallera,
Daniel Wolverson,
Tim Batten,
Sara Karbassi,
Sven Friedemann,
Giulio Cerullo,
Jasper van Wezel,
Stephen R. Clark,
Ettore Carpene,
Enrico Da Como
Abstract:
Understanding collective electronic states such as superconductivity and charge density waves is pivotal for fundamental science and applications. The layered transition metal dichalcogenide 1T-TiSe2 hosts a unique charge density wave (CDW) phase transition whose origins are still not fully understood. Here, we present ultrafast time- and angle-resolved photoemission spectroscopy (TR-ARPES) measur…
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Understanding collective electronic states such as superconductivity and charge density waves is pivotal for fundamental science and applications. The layered transition metal dichalcogenide 1T-TiSe2 hosts a unique charge density wave (CDW) phase transition whose origins are still not fully understood. Here, we present ultrafast time- and angle-resolved photoemission spectroscopy (TR-ARPES) measurements complemented by time-resolved reflectivity (TRR) which allows us to establish the contribution of excitonic and electron-phonon interactions to the CDW. We monitor the energy shift of the valence band (VB) and coupling to coherent phonons as a function of laser fluence. The VB shift, directly related to the CDW gap closure, exhibits a markedly slower recovery dynamics at fluences above Fth = 60 microJ cm-2. This observation coincides with a shift in the relative weight of coherently coupled phonons to higher frequency modes in time-resolved reflectivity (TRR), suggesting a phonon bottleneck. Using a rate equation model, the emergence of a high-fluence bottleneck is attributed to an abrupt reduction in coupled phonon damping and an increase in exciton dissociation rate linked to the loss of CDW superlattice phonons. Thus, our work establishes the important role of both excitonic and phononic interactions in the CDW phase transition and the advantage of combining complementary femtosecond techniques to understand the complex interactions in quantum materials.
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Submitted 21 August, 2019; v1 submitted 11 April, 2019;
originally announced April 2019.
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Electronic band structure of rhenium dichalcogenides
Authors:
Surani M. Gunasekera,
Daniel Wolverson,
Lewis S. Hart,
Marcin Mucha-Kruczynski
Abstract:
The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of the interband transitions in these materials, with several close-lying band gaps. Three-dimensional plots of constant energy surfaces in the Brillouin zone at energies near the band extrema are used to show that the valence band maximum and conduction band minimum may not be…
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The band structures of bulk transition metal dichalcogenides ReS2 and ReSe2 are presented, showing the complicated nature of the interband transitions in these materials, with several close-lying band gaps. Three-dimensional plots of constant energy surfaces in the Brillouin zone at energies near the band extrema are used to show that the valence band maximum and conduction band minimum may not be located at special high symmetry points. We find that both materials are indirect gap materials and that one must be careful to consider the whole Brillouin zone volume in addressing this question.
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Submitted 14 March, 2018; v1 submitted 9 January, 2018;
originally announced January 2018.
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Electronic bandstructure of ReS2 by high resolution angle resolved photoemission spectroscopy
Authors:
James L. Webb,
Lewis S. Hart,
Daniel Wolverson,
Chaoyu Chen,
Jose Avila,
Maria C. Asensio
Abstract:
The rhenium-based transition metal dichalcogenides (TMDs) are atypical of the TMD family due to their highly anisotropic crystalline structure and are recognized as promising materials for two dimensional heterostructure devices. The nature of the band gap (direct or indirect) for bulk, few and single layer forms of ReS$_2$ is of particular interest, due to its comparatively weak inter-planar inte…
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The rhenium-based transition metal dichalcogenides (TMDs) are atypical of the TMD family due to their highly anisotropic crystalline structure and are recognized as promising materials for two dimensional heterostructure devices. The nature of the band gap (direct or indirect) for bulk, few and single layer forms of ReS$_2$ is of particular interest, due to its comparatively weak inter-planar interaction. However, the degree of inter-layer interaction and the question of whether a transition from indirect to direct gap is observed on reducing thickness (as in other TMDs) are controversial. We present a direct determination of the valence band structure of bulk ReS$_2$ using high resolution angle resolved photoemission spectroscopy (ARPES). We find a clear in-plane anisotropy due to the presence of chains of Re atoms, with a strongly directional effective mass which is larger in the direction orthogonal to the Re chains (2.2 $m_e$) than along them (1.6 $m_e$), in good agreement with density functional theory calculations. An appreciable inter-plane interaction results in an experimentally-measured difference of ~100-200 meV between the valence band maxima at the Z point (0,0,1/2) and the $Γ$ point (0,0,0) of the three-dimensional Brillouin zone. This leads to a direct gap at Z and a close-lying but larger gap at $Γ$, implying that bulk ReS2 is marginally indirect. This may account for recent conflicting transport and photoluminescence measurements and the resulting uncertainty about the direct or indirect gap nature of this material.
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Submitted 7 September, 2017; v1 submitted 20 April, 2017;
originally announced April 2017.
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Electronic bandstructure and van der Waals coupling of ReSe2 revealed by high-resolution angle-resolved photoemission spectroscopy
Authors:
Lewis S Hart,
James L Webb,
Sara Dale,
Simon J. Bending,
Marcin Mucha-Kruczynski,
Daniel Wolverson,
Chaoyu Chen,
José Avila,
Maria C. Asensio
Abstract:
ReSe2 and ReS2 are unusual compounds amongst the layered transition metal dichalcogenides as a result of their low symmetry, with a characteristic in-plane anisotropy due to in-plane rhenium chains. They preserve inversion symmetry independent of the number of layers and, in contrast to more well-known transition metal dichalcogenides, bulk and few-monolayer Re-TMD compounds have been proposed to…
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ReSe2 and ReS2 are unusual compounds amongst the layered transition metal dichalcogenides as a result of their low symmetry, with a characteristic in-plane anisotropy due to in-plane rhenium chains. They preserve inversion symmetry independent of the number of layers and, in contrast to more well-known transition metal dichalcogenides, bulk and few-monolayer Re-TMD compounds have been proposed to behave as electronically and vibrational decoupled layers. Here, we probe for the first time the electronic band structure of bulk ReSe2 by direct nanoscale angle-resolved photoemission spectroscopy. We find a highly anisotropic in- and out-of-plane electronic structure, with the valence band maxima located away from any particular high-symmetry direction. The effective mass doubles its value perpendicular to the Re chains and the interlayer van der Waals coupling generates significant electronic dispersion normal to the layers. Our density functional theory calculations, including spin-orbit effects, are in excellent agreement with these experimental findings.
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Submitted 1 April, 2017;
originally announced April 2017.
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Suris tetrons: possible spectroscopic evidence for four-particle optical excitations of the 2D electron gas
Authors:
A. V. Koudinov,
C. Kehl,
A. V. Rodina,
J. Geurts,
D. Wolverson,
G. Karczewski
Abstract:
The excitations of a two-dimensional electron gas in quantum wells with intermediate carrier density (~10^{11} cm^{-2}), i.e., between the exciton-trion- and the Fermi-Sea range, are so far poorly understood. We report on an approach to bridge this gap by a magneto-photoluminescence study of modulation-doped (Cd,Mn)Te quantum well structures. Employing their enhanced spin splitting, we analyzed th…
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The excitations of a two-dimensional electron gas in quantum wells with intermediate carrier density (~10^{11} cm^{-2}), i.e., between the exciton-trion- and the Fermi-Sea range, are so far poorly understood. We report on an approach to bridge this gap by a magneto-photoluminescence study of modulation-doped (Cd,Mn)Te quantum well structures. Employing their enhanced spin splitting, we analyzed the characteristic magnetic-field behavior of the individual photoluminescence features. Based on these results and earlier findings by other authors, we present a new approach for understanding the optical transitions at intermediate densities in terms of four-particle excitations, the Suris tetrons, which were up to now only predicted theoretically. All characteristic photoluminescence features are attributed to emission from these quasi-particles when attaining different final states.
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Submitted 12 March, 2014; v1 submitted 25 April, 2013;
originally announced April 2013.
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The origin of the red luminescence in Mg-doped GaN
Authors:
S. Zeng,
G. N. Aliev,
J. J. Davies,
D. Wolverson,
S. J. Bingham,
D. A. Adbulmalik,
P. G. Coleman,
P. J. Parbrook,
T. Wang
Abstract:
Optically-detected magnetic resonance (ODMR) and positron annihilation spectroscopy (PAS) experiments have been employed to study magnesium-doped GaN layers grown by metal-organic vapor phase epitaxy. As the Mg doping level is changed, the combined experiments reveal a strong correlation between the vacancy concentrations and the intensity of the red photoluminescence band at 1.8 eV. The analysi…
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Optically-detected magnetic resonance (ODMR) and positron annihilation spectroscopy (PAS) experiments have been employed to study magnesium-doped GaN layers grown by metal-organic vapor phase epitaxy. As the Mg doping level is changed, the combined experiments reveal a strong correlation between the vacancy concentrations and the intensity of the red photoluminescence band at 1.8 eV. The analysis provides strong evidence that the emission is due to recombination in which electrons both from effective mass donors and from deeper donors recombine with deep centers, the deep centers being vacancy-related defects.
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Submitted 4 February, 2006;
originally announced February 2006.
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Linear polarization of the photoluminescence of quantum wells
Authors:
A. V. Koudinov,
N. S. Averkiev,
Yu. G. Kusrayev,
B. R. Namozov,
B. P. Zakharchenya,
D. Wolverson,
J. J. Davies,
T. Wojtowicz,
G. Karczewski,
J. Kossut
Abstract:
The degree and orientation of the magnetic-field induced linear polarization of the photoluminescence from a wide range of heterostructures containing (Cd,Mn)Te quantum wells between (Cd,Mn,Mg)Te barriers has been studied as a function of detection photon energy, applied magnetic field strength and orientation in the quantum well plane. A theoretical description of this effect in terms of an in-…
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The degree and orientation of the magnetic-field induced linear polarization of the photoluminescence from a wide range of heterostructures containing (Cd,Mn)Te quantum wells between (Cd,Mn,Mg)Te barriers has been studied as a function of detection photon energy, applied magnetic field strength and orientation in the quantum well plane. A theoretical description of this effect in terms of an in-plane deformation acting on the valence band states is presented and is verified by comparison with the experimental data. We attempted to identify clues to the microscopic origin of the valence band spin anisotropy and to the mechanisms which actually determine the linear polarization of the PL in the quantum wells subject to the in-plane magnetic field. The conclusions of the present paper apply in full measure to non-magnetic QWs as well as ensembles of disk-like QDs with shape and/or strain anisotropy.
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Submitted 10 January, 2006;
originally announced January 2006.
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Binding Energy of Charged Excitons in ZnSe-based Quantum Wells
Authors:
G. V. Astakhov,
D. R. Yakovlev,
V. P. Kochereshko,
W. Ossau,
J. Puls,
F. Henneberger,
S. A. Crooker,
Q. McCulloch,
D. Wolverson,
N. A. Gippius,
W. Faschinger,
A. Waag
Abstract:
Excitons and charged excitons (trions) are investigated in ZnSe-based quantum well structures with (Zn,Be,Mg)Se and (Zn,Mg)(S,Se) barriers by means of magneto-optical spectroscopy. Binding energies of negatively () and positively (X+) charged excitons are measured as functions of quantum well width, free carrier density and in external magnetic fields up to 47 T. The binding energy of shows a st…
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Excitons and charged excitons (trions) are investigated in ZnSe-based quantum well structures with (Zn,Be,Mg)Se and (Zn,Mg)(S,Se) barriers by means of magneto-optical spectroscopy. Binding energies of negatively () and positively (X+) charged excitons are measured as functions of quantum well width, free carrier density and in external magnetic fields up to 47 T. The binding energy of shows a strong increase from 1.4 to 8.9 meV with decreasing quantum well width from 190 to 29 A. The binding energies of X+ are about 25% smaller than the binding energy in the same structures. The magnetic field behavior of and X+ binding energies differ qualitatively. With growing magnetic field strength, increases its binding energy by 35-150%, while for X+ it decreases by 25%. Zeeman spin splittings and oscillator strengths of excitons and trions are measured and discussed.
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Submitted 30 November, 2001;
originally announced December 2001.
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Magneto-photoluminescence studies of Zn_{1-x}Mn_xTe/ZnTe multiple quantum-well and quantum dot structures
Authors:
Ivan J. Griffin,
Peter J. Klar,
Daniel Wolverson,
J. John Davies,
Bernard Lunn,
Duncan E. Ashenford,
Torsten Henning
Abstract:
Wide quantum dots were fabricated from multiple quantum well structures based on Zn_{1-x}Mn_xTe/ZnTe (x = 0.076) dilute magnetic semiconductors and were investigated via photoluminescence (PL) in a magnetic field. Calculations taking into account the strain in the two types of structure enabled the PL transitions to be identified and show that the dominant emission in the MQWs is from heavy-hole…
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Wide quantum dots were fabricated from multiple quantum well structures based on Zn_{1-x}Mn_xTe/ZnTe (x = 0.076) dilute magnetic semiconductors and were investigated via photoluminescence (PL) in a magnetic field. Calculations taking into account the strain in the two types of structure enabled the PL transitions to be identified and show that the dominant emission in the MQWs is from heavy-hole (hh) excitons whereas in the quantum dots, the removal of the strain in the barrier layers generates a large biaxial tensile strain in the quantum wells which shifts the light-hole (lh) exciton to lower energy than the hh exciton. The lh exciton sigma^+ transition is virtually independent of magnetic field whilst the hh exciton is field-dependent. Thus, at fields of 1 to 2 Tesla, the hh exciton sigma^+ transition again becomes the lowest energy transition of the quantum dots. These observations are described by a model with a chemical valence band offset of 30% for Zn_{1-x}Mn_xTe/ZnTe.
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Submitted 7 May, 1998;
originally announced May 1998.
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Photoluminescence and photoluminescence excitation studies of lateral size effects in Zn_{1-x}Mn_xSe/ZnSe quantum disc samples of different radii
Authors:
P. J. Klar,
D. Wolverson,
J. J. Davies,
W. Heimbrodt,
M. Happ,
Torsten Henning
Abstract:
Quantum disc structures (with diameters of 200 nm and 100 nm) were prepared from a Zn_{0.72}Mn_{0.28}Se/ZnSe single quantum well structure by electron beam lithography followed by an etching procedure which combined dry and wet etching techniques. The quantum disc structures and the parent structure were studied by photoluminescence and photoluminescence excitation spectroscopy. For the light-ho…
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Quantum disc structures (with diameters of 200 nm and 100 nm) were prepared from a Zn_{0.72}Mn_{0.28}Se/ZnSe single quantum well structure by electron beam lithography followed by an etching procedure which combined dry and wet etching techniques. The quantum disc structures and the parent structure were studied by photoluminescence and photoluminescence excitation spectroscopy. For the light-hole excitons in the quantum well region, shifts of the energy positions are observed following fabrication of the discs, confirming that strain relaxation occurs in the pillars. The light-hole exciton lines also sharpen following disc fabrication: this is due to an interplay between strain effects (related to dislocations) and the lateral size of the discs. A further consequence of the small lateral sizes of the discs is that the intensity of the donor-bound exciton emission from the disc is found to decrease with the disc radius. These size-related effects occur before the disc radius is reduced to dimensions necessary for lateral quantum confinement to occur but will remain important when the discs are made small enough to be considered as quantum dots.
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Submitted 17 March, 1998;
originally announced March 1998.
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Comparison of Zn_{1-x}Mn_xTe/ZnTe multiple-quantum wells and quantum dots by below-bandgap photomodulated reflectivity
Authors:
P. J. Klar,
D. Wolverson,
D. E. Ashenford,
B. Lunn,
Torsten Henning
Abstract:
Large-area high density patterns of quantum dots with a diameter of 200 nm have been prepared from a series of four Zn_{0.93}Mn_{0.07}Te/ZnTe multiple quantum well structures of different well width (4 nm, 6 nm, 8 nm and 10 nm) by electron beam lithography followed by Ar+ ion beam etching. Below-bandgap photomodulated reflectivity spectra of the quantum dot samples and the parent heterostructure…
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Large-area high density patterns of quantum dots with a diameter of 200 nm have been prepared from a series of four Zn_{0.93}Mn_{0.07}Te/ZnTe multiple quantum well structures of different well width (4 nm, 6 nm, 8 nm and 10 nm) by electron beam lithography followed by Ar+ ion beam etching. Below-bandgap photomodulated reflectivity spectra of the quantum dot samples and the parent heterostructures were then recorded at 10 K and the spectra were fitted to extract the linewidths and the energy positions of the excitonic transitions in each sample. The fitted results are compared to calculations of the transition energies in which the different strain states in the samples are taken into account. We show that the main effect of the nanofabrication process is a change in the strain state of the quantum dot samples compared to the parent heterostructures. The quantum dot pillars turn out to be freestanding, whereas the heterostructures are in a good approximation strained to the ZnTe lattice constant. The lateral size of the dots is such that extra confinement effects are not expected or observed.
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Submitted 1 October, 1997;
originally announced October 1997.
