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Strain Wave Pathway to Semiconductor-to-Metal Transition revealed by time resolved X-ray powder diffraction
Authors:
C. Mariette,
M. Lorenc,
H. Cailleau,
E. Collet,
L. Guérin,
A. Volte,
E. Trzop,
R. Bertoni,
X. Dong,
B. Lépine,
O Hernandez,
E. Janod,
L. Cario,
V. Ta Phuoc,
S. Ohkoshi,
H. Tokoro,
L. Patthey,
A. Babic,
I. Usov,
D. Ozerov,
L. Sala,
S. Ebner,
P. Böhler,
A Keller,
A. Oggenfuss
, et al. (20 additional authors not shown)
Abstract:
Thanks to the remarkable developments of ultrafast science, one of today's challenges is to modify material state by controlling with a light pulse the coherent motions that connect two different phases. Here we show how strain waves, launched by electronic and structural precursor phenomena, determine a macroscopic transformation pathway for the semiconducting-to-metal transition with large volum…
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Thanks to the remarkable developments of ultrafast science, one of today's challenges is to modify material state by controlling with a light pulse the coherent motions that connect two different phases. Here we show how strain waves, launched by electronic and structural precursor phenomena, determine a macroscopic transformation pathway for the semiconducting-to-metal transition with large volume change in bistable Ti$_3$O$_5$ nanocrystals. Femtosecond powder X-ray diffraction allowed us to quantify the structural deformations associated with the photoinduced phase transition on relevant time scales. We monitored the early intra-cell distortions around absorbing metal dimers, but also long range crystalline deformations dynamically governed by acoustic waves launched at the laser-exposed Ti$_3$O$_5$ surface. We rationalize these observations with a simplified elastic model, demonstrating that a macroscopic transformation occurs concomitantly with the propagating acoustic wavefront on the picosecond timescale, several decades earlier than the subsequent thermal processes governed by heat diffusion.
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Submitted 20 February, 2020; v1 submitted 19 February, 2020;
originally announced February 2020.
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Demonstration of a picosecond Bragg switch for hard x-rays in a synchrotron-based pump-probe experiment
Authors:
M. Sander,
R. Bauer,
V. Kabanova,
M. Levantino,
M. Wulff,
D. Pfuetzenreuter,
J. Schwarzkopf,
P. Gaal
Abstract:
We report a benchmark experiment that demonstrates shortening of hard x-ray pulses in a synchrotron-based optical pump - x-ray probe experiment. The pulse shortening device, a picosecond Bragg switch, reduces the temporal resolution of an incident x-ray pulse to 7.5 ps. We employ the Bragg switch to monitor propagating sound waves in nanometer-thin epitaxial films. With the experimental data we in…
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We report a benchmark experiment that demonstrates shortening of hard x-ray pulses in a synchrotron-based optical pump - x-ray probe experiment. The pulse shortening device, a picosecond Bragg switch, reduces the temporal resolution of an incident x-ray pulse to 7.5 ps. We employ the Bragg switch to monitor propagating sound waves in nanometer-thin epitaxial films. With the experimental data we infer pulse duration, diffraction efficiency and switching contrast of the device. A detailed efficiency analysis shows, that the switch can deliver up to 1010 photons/sec in high-repetition rate synchrotron experiments.
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Submitted 15 May, 2019; v1 submitted 19 December, 2018;
originally announced December 2018.
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Stabilizing a high-pressure phase in InSb at ambient conditions with a laser-driven pressure pulse
Authors:
A. Jarnac,
Xiaocui Wang,
A. U. J Bengtsson,
M. Burza,
J. C. Ekstrom,
H. Enquist,
A. Jurgilaitis,
N. Kretzschmar,
A. I. H. Persson,
C. M. Tu,
M. Wulff,
F. Dorchies,
J. Larsson
Abstract:
In this letter, we describe the stabilization of indium antimonide (InSb) in the high-pressure orthorhombic phase (InSb-III) at ambient conditions. Until now, InSb-III has only been observed above 9 GPa, or at around 3 GPa as a metastable structure during the phase transition from cubic zinc blende (InSb-I) to orthorhombic InSb-IV. The crystalline phase transition from InSb-I to InSb-III was drive…
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In this letter, we describe the stabilization of indium antimonide (InSb) in the high-pressure orthorhombic phase (InSb-III) at ambient conditions. Until now, InSb-III has only been observed above 9 GPa, or at around 3 GPa as a metastable structure during the phase transition from cubic zinc blende (InSb-I) to orthorhombic InSb-IV. The crystalline phase transition from InSb-I to InSb-III was driven by an ultrashort, laser-generated, non-hydrostatic pressure pulse. The transition occurred in preferred orientations locked to the initial orientation of the InSb-I crystal, breaking the symmetry of the InSb-I cubic cell to form the InSb-III orthorhombic cell.
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Submitted 14 December, 2017;
originally announced December 2017.
