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Silicon carbide stacking-order-induced doping variation in epitaxial graphene
Authors:
Davood Momeni Pakdehi,
Philip Schädlich,
T. T. Nhung Nguyen,
Alexei A. Zakharov,
Stefan Wundrack,
Florian Speck,
Klaus Pierz,
Thomas Seyller,
Christoph Tegenkamp,
Hans. W. Schumacher
Abstract:
Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal SiC(0001) substrate and overcompensation by donor-like states related to the buffer layer. In this work, we evidence that this effect is also related to the specific underlying SiC terrace. We fabricated a periodic sequence of non-identi…
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Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal SiC(0001) substrate and overcompensation by donor-like states related to the buffer layer. In this work, we evidence that this effect is also related to the specific underlying SiC terrace. We fabricated a periodic sequence of non-identical SiC terraces, which are unambiguously attributed to specific SiC surface terminations. A clear correlation between the SiC termination and the electronic graphene properties is experimentally observed and confirmed by various complementary surface-sensitive methods. We attribute this correlation to a proximity effect of the SiC termination-dependent polarization doping on the overlying graphene layer. Our findings open a new approach for a nano-scale doping-engineering by self-patterning of epitaxial graphene and other 2D layers on dielectric polar substrates.
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Submitted 30 May, 2020;
originally announced June 2020.
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Liquid metal intercalation of epitaxial graphene: large-area gallenene layer fabrication through gallium self-propagation at ambient conditions
Authors:
S. Wundrack,
D. Momeni Pakdehi,
W. Dempwolf,
N. Schmidt,
K. Pierz,
L. Michaliszyn,
H. Spende,
A. Schmidt,
H. W. Schumacher,
R. Stosch,
A. Bakin
Abstract:
We demonstrate the fabrication of an ultra thin gallium film, also known as gallenene, beneath epitaxial graphene on 6H-SiC under ambient conditions triggered by liquid gallium intercalation. Gallenene has been fabricated using the liquid metal intercalation, achieving lateral intercalation and diffusion of Ga atoms at room temperature on square centimeter areas limited only by the graphene sample…
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We demonstrate the fabrication of an ultra thin gallium film, also known as gallenene, beneath epitaxial graphene on 6H-SiC under ambient conditions triggered by liquid gallium intercalation. Gallenene has been fabricated using the liquid metal intercalation, achieving lateral intercalation and diffusion of Ga atoms at room temperature on square centimeter areas limited only by the graphene samples' size. The stepwise self-propagation of the gallenene film below the epitaxial graphene surface on the macroscopic scale was observed by optical microscopy shortly after the initial processing without further physical or chemical treatment. Directional Ga diffusion of gallenene occurs on SiC terraces since the terrace steps form an energetic barrier (Ehrlich-Schwoebel barrier),retarding the gallenene propagation. The subsequent conversion of the epitaxial graphene into quasi free-standing bilayer graphene (QFBLG) and the graphene-gallenene heterostack interactions have been analyzed by XPS and Raman measurements. The results reveal a novel approach for controlled fabrication of wafer-scale gallenene as well as for two-dimensional heterostructures and stacks based on the interaction between liquid metal and epitaxial graphene.
Please note, this work was also titled as Graphene meets gallenene -- A straightforward approach to developing large-area heterostacks by gallium self-propagation https://www.researchgate.net/publication/333451130_Graphene_meets_gallenene_-_A_straightforward_approach_to_developing_large-area_heterostacks_by_gallium_self-propagation
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Submitted 16 July, 2020; v1 submitted 29 May, 2019;
originally announced May 2019.
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Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC
Authors:
Davood Momeni Pakdehi,
Klaus Pierz,
Stefan Wundrack,
Johannes Aprojanz,
Thi Thuy Nhung Nguyen,
Thorsten Dziomba,
Frank Hohls,
Andrey Bakin,
Rainer Stosch,
Christoph Tegenkamp,
Franz J. Ahlers,
Hans W. Schumacher
Abstract:
In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction (LEED) measurements reveal that the decomposition of the SiC substrate strongly depends on the Ar mass flow rate while pressure and temperature are kept constant. Ou…
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In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction (LEED) measurements reveal that the decomposition of the SiC substrate strongly depends on the Ar mass flow rate while pressure and temperature are kept constant. Our data are interpreted by a model based on the competition of the SiC decomposition rate, controlled by the Ar flow, with a uniform graphene buffer layer formation under the equilibrium process at the SiC surface. The proper choice of a set of growth parameters allows the growth of defect-free, ultra-smooth and coherent graphene-free buffer layer and bilayer-free monolayer graphene sheets which can be transformed into large-area high-quality quasi-freestanding monolayer and bilayer graphene (QFMLG and QFBLG) by hydrogen intercalation. AFM, scanning tunneling microscopy (STM), Raman spectroscopy and electronic transport measurements underline the excellent homogeneity of the resulting quasi-freestanding layers. Electronic transport measurements in four-point probe configuration reveal a homogeneous low resistance anisotropy on both μm- and mm scales.
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Submitted 12 November, 2018;
originally announced November 2018.
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Tailoring the SiC surface - a morphology study on the epitaxial growth of graphene and its buffer layer
Authors:
Mattias Kruskopf,
Klaus Pierz,
Davood Momeni Pakdehi,
Stefan Wundrack,
Rainer Stosch,
Andrey Bakin,
Hans W. Schumacher
Abstract:
We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation of local buffer layer domains are identified to be the origin of undesirably high step edges in excellent agreement with the predictions of a general model of step dynamics. The applied polymer-assisted sublimation grow…
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We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation of local buffer layer domains are identified to be the origin of undesirably high step edges in excellent agreement with the predictions of a general model of step dynamics. The applied polymer-assisted sublimation growth method demonstrates that the key principle to suppress this behavior is the uniform nucleation of the buffer layer. In this way, the silicon carbide surface is stabilized such that ultra-flat surfaces can be conserved during graphene growth on a large variety of silicon carbide substrate surfaces. The analysis of the experimental results describes different growth modes which extend the current understanding of epitaxial graphene growth by emphasizing the importance of buffer layer nucleation and critical mass transport processes.
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Submitted 10 July, 2017; v1 submitted 26 April, 2017;
originally announced April 2017.
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Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC
Authors:
Mattias Kruskopf,
Davood Momeni Pakdehi,
Klaus Pierz,
Stefan Wundrack,
Rainer Stosch,
Thorsten Dziomba,
Martin Goetz,
Jens Baringhaus,
Johannes Aprojanz,
Christoph Tegenkamp,
Jakob Lidzba,
Thomas Seyller,
Frank Hohls,
Franz J. Ahlers,
Hans W. Schumacher
Abstract:
We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation…
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We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of polymer adsorbates which act as a carbon source. With most of the steps well below 0.75 nm pure monolayer graphene without bilayer inclusions is formed with lateral dimensions only limited by the size of the substrate. This makes the polymer assisted sublimation growth technique the most promising method for commercial wafer scale epitaxial graphene fabrication. The extraordinary electronic quality is evidenced by quantum resistance metrology at 4.2 K with until now unreached precision and high electron mobilities on mm scale devices.
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Submitted 6 June, 2016;
originally announced June 2016.
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Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment
Authors:
Mattias Kruskopf,
Klaus Pierz,
Stefan Wundrack,
Rainer Stosch,
Thorsten Dziomba,
Cay-Christian Kalmbach,
André Müller,
Jens Baringhaus,
Christoph Tegenkamp,
Franz J. Ahlers,
Hans W. Schumacher
Abstract:
The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the epitaxial graphene layers change significantly when different pretreatment procedures are applied to nearly on-axis 6H-SiC(0001) substrates. It turns out that the…
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The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the epitaxial graphene layers change significantly when different pretreatment procedures are applied to nearly on-axis 6H-SiC(0001) substrates. It turns out that the often used hydrogen etching of the substrate is responsible for undesirable high macro steps evolving during graphene growth. A more advantageous type of sub-nanometer stepped graphene layers is obtained with a new method: a high-temperature conditioning of the SiC surface in argon atmosphere. The results can be explained by the observed graphene buffer layer domains after the conditioning process which suppress giant step bunching and graphene step flow growth. The superior electronic quality is demonstrated by a less extrinsic resistance anisotropy obtained in nano-probe transport experiments and by the excellent quantization of the Hall resistance in low-temperature magneto-transport measurements. The quantum Hall resistance agrees with the nominal value (half of the von Klitzing constant) within a standard deviation of 4.5*10(-9) which qualifies this method for the fabrication of electrical quantum standards.
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Submitted 27 April, 2015; v1 submitted 13 February, 2015;
originally announced February 2015.
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All-carbon vertical van der Waals heterostructures: Non-destructive functionalization of graphene for electronic applications
Authors:
Miroslaw Woszczyna,
Andreas Winter,
Miriam Grothe,
Annika Willunat,
Stefan Wundrack,
Rainer Stosch,
Thomas Weimann,
Franz Ahlers,
Andrey Turchanin
Abstract:
We present a route to non-destructive functionalization of graphene via assembly of vertical all-carbon van der Waals heterostructures. To this end, we employ singlelayer graphene (SLG) sheets grown by low-pressure methane CVD on Cu foils and large-area dielectric ~1 nm thick amino-terminated carbon nanomembranes (NH2-CNMs) generated by electron-beam-induced crosslinking of aromatic self-assembled…
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We present a route to non-destructive functionalization of graphene via assembly of vertical all-carbon van der Waals heterostructures. To this end, we employ singlelayer graphene (SLG) sheets grown by low-pressure methane CVD on Cu foils and large-area dielectric ~1 nm thick amino-terminated carbon nanomembranes (NH2-CNMs) generated by electron-beam-induced crosslinking of aromatic self-assembled monolayers. We encapsulate SLG sheets on oxidized silicon wafers with NH2-CNMs via mechanical stacking and characterize structural, chemical and electronic properties of the formed heterostructures by Raman spectroscopy and X-ray photoelectron spectroscopy as well as by electric and electromagnetic transport measurements. We show that functional amino groups are brought in close vicinity of the SLG sheets and that their transport characteristics are not impaired by this functionalization; moreover, we demonstrate a functional response of the heterostructure devices to the protonation of the amino groups in water. Due to its relative simplicity, the suggested approach opens broad avenues for implementations in graphene-based electronic devices where non-destructive chemical functionalization of graphene is required (e.g., for engineering electrical transducers for chemical and bio-sensing) or as complementary dielectric to graphene in hieratical heterostructures.
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Submitted 8 June, 2014;
originally announced June 2014.
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Functional single-layer graphene sheets from aromatic monolayers
Authors:
Dan G. Matei,
Nils-Eike Weber,
Simon Kurasch,
Stefan Wundrack,
Miroslaw Woszczyna,
Miriam Grothe,
Thomas Weimann,
Franz Ahlers,
Rainer Stosch,
Ute Kaiser,
Andrey Turchanin
Abstract:
We demonstrate how self-assembled monolayers of aromatic molecules on copper substrates can be converted into high-quality single-layer graphene using low-energy electron irradiation and subsequent annealing. We characterize this two-dimensional solid state transformation on the atomic scale and study the physical and chemical properties of the formed graphene sheets by complementary microscopic a…
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We demonstrate how self-assembled monolayers of aromatic molecules on copper substrates can be converted into high-quality single-layer graphene using low-energy electron irradiation and subsequent annealing. We characterize this two-dimensional solid state transformation on the atomic scale and study the physical and chemical properties of the formed graphene sheets by complementary microscopic and spectroscopic techniques and by electrical transport measurements. As substrates we successfully use Cu(111) single crystals and the technologically relevant polycrystalline copper foils.
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Submitted 8 June, 2014;
originally announced June 2014.
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Versatile sputtering technology for Al2O3 gate insulators on graphene
Authors:
M. Friedemann,
M. Woszczyna,
A. Müller,
S. Wundrack,
T. Dziomba,
Th. Weimann,
Th. Seyller,
F. Ahlers
Abstract:
We report a novel fabrication method of graphene Al2O3 gate insulators based on sputtering. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al2O3 layers possess comparable quality to oxides obtained by atomic layer deposition (ALD) with respect to a high relative dielectric constant of about 8, as well as low-hysteresis performance and hig…
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We report a novel fabrication method of graphene Al2O3 gate insulators based on sputtering. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al2O3 layers possess comparable quality to oxides obtained by atomic layer deposition (ALD) with respect to a high relative dielectric constant of about 8, as well as low-hysteresis performance and high breakdown voltage. We observe a moderate carrier mobility of about 1000 cm2/Vs in graphene and 350 cm2/Vs in its bilayer due to increased resonant scattering on atomic scale defects. Most likely this originated from the thin Al precursor layer evaporated prior to sputtering the Al2O3 gate oxide.
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Submitted 7 October, 2011;
originally announced October 2011.
