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Successive Phase Transition in Higher-order Topological Anderson Insulators
Authors:
Aodong Li,
Bingcong Xu,
Biye Xie
Abstract:
Disorder, traditionally believed to hinder the propagation of waves. has recently been shown to prompt the occurrence of topological phase transitions. For example, when disorder strength continuously increases and surpasses certain critical value, a phase transition from topologically trivial to nontrivial insulating phases occurs. However, in the parameter domain of the nontrivial phase, whether…
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Disorder, traditionally believed to hinder the propagation of waves. has recently been shown to prompt the occurrence of topological phase transitions. For example, when disorder strength continuously increases and surpasses certain critical value, a phase transition from topologically trivial to nontrivial insulating phases occurs. However, in the parameter domain of the nontrivial phase, whether there exists a finer phase diagram that can be further classified by different disorder strengths is still unclear. Here we present a successive topological phase transition driven by the disorder strength in a higher-order topological insulator with long-range couplings. As the strength of the disorder gradually increases, the real-space topological invariant of the system undergoes a consecutive change from 0 to 4, accompanied by the stepped increase in the number of boundary-localized corner states. Our work opens an avenue for utilizing disorder to induce phase transitions among different higher-order topological insulators.
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Submitted 23 April, 2024;
originally announced April 2024.
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Ubiquitous short-range order in multi-principal element alloys
Authors:
Ying Han,
Hangman Chen,
Yongwen Sun,
Jian Liu,
Shaolou Wei,
Bijun Xie,
Zhiyu Zhang,
Yingxin Zhu,
Meng Li,
Judith Yang,
Wen Chen,
Penghui Cao,
Yang Yang
Abstract:
Recent research in multi-principal element alloys (MPEAs) has increasingly focused on the exploration and exploitation of short-range order (SRO) to enhance material performance. However, the understanding of SRO formation and the precise tuning of it within MPEAs remains poorly understood, limiting the comprehension of its impact on material properties and impeding the advancement of SRO engineer…
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Recent research in multi-principal element alloys (MPEAs) has increasingly focused on the exploration and exploitation of short-range order (SRO) to enhance material performance. However, the understanding of SRO formation and the precise tuning of it within MPEAs remains poorly understood, limiting the comprehension of its impact on material properties and impeding the advancement of SRO engineering. Here, leveraging advanced additive manufacturing techniques that produce samples with a wide range of cooling rates (up to 10^7 K/s) and an improved quantitative electron microscopy method, we characterize SRO in three CoCrNi-based MPEAs to unravel the role of processing route and thermal history on SRO. Surprisingly, irrespective of the processing and thermal treatment applied, all samples exhibit similar levels of SRO, suggesting that prevalent SRO may form during the solidification process. Atomistic simulations of solidification verify that local chemical ordering arises in the liquid-solid interface (solidification front) even under the extreme cooling rate of 10^11 K/s. This phenomenon stems from the swift atomic diffusion in the supercooled liquid, which matches or even surpasses the rate of solidification. Therefore, SRO is an inherent characteristic of most MPEAs, insensitive to variations in cooling rates and annealing treatments typically available in experiments. Integrating thermal treatment with other strategies, such as mechanical deformation and irradiation, might be more effective approaches for harnessing SRO to achieve controlled material properties.
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Submitted 23 February, 2024;
originally announced February 2024.
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A scale-invariant large-area single-mode topological photonic cavity
Authors:
Zhongfu Li,
Shiqi Li,
Bei Yan,
Hsun-Chi Chan,
Jing Li,
Jun Guan,
Wengang Bi,
Yuanjiang Xiang,
Zhen Gao,
Shuang Zhang,
Peng Zhan,
Zhenlin Wang,
Biye Xie
Abstract:
Emergent collective modes in lattices give birth to many intriguing physical phenomena in condensed matter physics. Among these collective modes, large-area modes typically feature small level spacings, whilst a single mode tends to be spatially tightly confined. Here, we theoretically propose and experimentally demonstrate a unique scale-invariant, large-area, and single-mode topological cavity m…
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Emergent collective modes in lattices give birth to many intriguing physical phenomena in condensed matter physics. Among these collective modes, large-area modes typically feature small level spacings, whilst a single mode tends to be spatially tightly confined. Here, we theoretically propose and experimentally demonstrate a unique scale-invariant, large-area, and single-mode topological cavity mode in a two-dimensional photonic crystal. This mode emerges from the hybridization of the large-area fundamental Dirac mode and in-gap topological corner modes. Remarkably, we find that the scale-invariant, large-area, and single-mode topological cavity mode possesses unique chiralities and with a tunable mode area under the change of the mass term of the inner topological nontrivial lattice. We experimentally observe such topological cavity modes in a 2D photonic system and demonstrate the robustness by introducing disorders in the cavity structure. Our findings have propelled the forefront of higher-order topology research, transitioning it from single-lattice systems to multi-lattice systems and may support promising potential applications, particularly in vertical-cavity surface-emitting lasers.
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Submitted 15 January, 2024;
originally announced January 2024.
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Colossal Magnetoresistance in Twisted Intertwined Graphene Spirals
Authors:
Yiwen Zhang,
Bo Xie,
Yue Yang,
Yueshen Wu,
Xin Lu,
Yuxiong Hu,
Yifan Ding,
Jiadian He,
Peng Dong,
Jinghui Wang,
Xiang Zhou,
Jianpeng Liu,
Zhu-Jun Wang,
Jun Li
Abstract:
Colossal magnetoresistance (CMR) is highly applicable in spintronic devices such as magnetic sensors, magnetic memory, and hard drives. Typically, CMR is found in Weyl semimetals characterized by perfect electron-hole symmetry or exceptionally high electric conductivity and mobility. Our study explores this phenomenon in a recently developed graphene moir$\acute{e}$ system, which demonstrates CMR…
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Colossal magnetoresistance (CMR) is highly applicable in spintronic devices such as magnetic sensors, magnetic memory, and hard drives. Typically, CMR is found in Weyl semimetals characterized by perfect electron-hole symmetry or exceptionally high electric conductivity and mobility. Our study explores this phenomenon in a recently developed graphene moir$\acute{e}$ system, which demonstrates CMR owing to its topological structure and high-quality crystal formation. We specifically investigate the electronic properties of three-dimensional (3D) intertwined twisted graphene spirals (TGS), manipulating the screw dislocation axis to achieve a rotation angle of 7.3$^{\circ}$. Notably, at 14 T and 2 K, the magnetoresistance of these structures reached 1.7$\times$10$^7$%, accompanied by an unexpected metal-to-insulator transition as the temperature increased. This transition becomes noticeable when the magnetic field exceeds a minimal threshold of approximately 0.1 T. These observations suggest the existence of complex, correlated states within the partially filled three-dimensional Landau levels of the 3D TGS system. Our findings open up new possibilities for achieving CMR by engineering the topological structure of 2D layered moir$\acute{e}$ systems.
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Submitted 26 November, 2023;
originally announced November 2023.
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Theory of fractional Chern insulator states in pentalayer graphene moiré superlattice
Authors:
Zhongqing Guo,
Xin Lu,
Bo Xie,
Jianpeng Liu
Abstract:
The experimental discoveries of fractional quantum anomalous Hall effects under zero magnetic fields in both transition metal dichalcogenide and pentalayer graphene moiré superlattices have aroused significant research interest. In this work, we theoretically study the fractional quantum anomalous Hall states (also known as fractional Chern insulator states) in pentalayer graphene moiré superlatti…
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The experimental discoveries of fractional quantum anomalous Hall effects under zero magnetic fields in both transition metal dichalcogenide and pentalayer graphene moiré superlattices have aroused significant research interest. In this work, we theoretically study the fractional quantum anomalous Hall states (also known as fractional Chern insulator states) in pentalayer graphene moiré superlattice. Starting from the highest energy scale ($\sim\!2\,$eV) of the continuum model, we first construct a renormalized low-energy model that applies to a lower cutoff $\sim\!0.15\,$eV using renormalization group approach. Then, we study the ground states of the renormalized low-energy model at filling 1 under Hartree-Fock approximation in the presence of tunable but self-consistently screened displacement field $D$ with several experimentally relevant background dielectric constant $ε_r$. Two competing Hartree-Fock states are obtained at filling 1, which give rise to two types of topologically distinct isolated flat bands with Chern number 1 and 0, respectively. We continue to explore the interacting ground states of the two types of isolated flat bands at hole dopings of 1/3, 2/5, 3/5, and 2/3 (corresponding electron fillings of 2/3, 3/5, 2/5, and 1/3 with respect to charge neutrality). Setting $ε_r=5$, our exact-diagonalization calculations suggest that the system stays in fractional Chern insulator (FCI) state at 2/3 electron filling when $0.9\,\textrm{V/nm}\leq\!D\!\leq 0.92\,\textrm{V/nm}$; while no robust FCI state is obtained at 1/3 electron filling. We have also obtained composite-fermion type FCI ground states at 3/5 electron filling within $0.9\,\textrm{V/nm}\leq\! D \!\leq\!0.95\,\textrm{V/nm}$ and $ε_r=5$. These numerical results are quantitatively consistent with experimental observations.
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Submitted 12 December, 2023; v1 submitted 24 November, 2023;
originally announced November 2023.
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Magic momenta and three dimensional Landau levels from a three dimensional graphite moiré superlattice
Authors:
Xin Lu,
Bo Xie,
Yue Yang,
Xiao Kong,
Jun Li,
Feng Ding,
Zhu-Jun Wang,
Jianpeng Liu
Abstract:
Twisted bilayer graphene (TBG) and other quasi-two-dimensional moiré superlattices have attracted significant attention due to the emergence of various correlated and topological states associated with the flat bands in these systems. In this work, we theoretically explore the physical properties of a new type of \textit{three dimensional graphite moiré superlattice}, the bulk alternating twisted…
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Twisted bilayer graphene (TBG) and other quasi-two-dimensional moiré superlattices have attracted significant attention due to the emergence of various correlated and topological states associated with the flat bands in these systems. In this work, we theoretically explore the physical properties of a new type of \textit{three dimensional graphite moiré superlattice}, the bulk alternating twisted graphite (ATG) system with homogeneous twist angle, which is grown by in situ chemical vapor decomposition method. Compared to TBG, the bulk ATG system is bestowed with an additional wavevector degrees of freedom due to the extra dimensionality. As a result, we find that when the twist angle of bulk ATG is smaller than twice of the magic angle of TBG, there always exist ``magic momenta" at which the in-plane Fermi velocities of the moiré bands vanish. Moreover, topologically distinct flat bands of TBG at different magic angles can even co-exist at different out-of-plane wavevectors in a single bulk ATG system. Most saliently, when the twist angle is relatively large, exactly dispersionless three dimensional zeroth Landau level would emerge in the bulk ATG, which may give rise to robust three dimensional quantum Hall effects over a large range of twist angles.
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Submitted 2 September, 2023;
originally announced September 2023.
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Lattice distortions, moiré phonons, and relaxed electronic band structures in magic-angle twisted bilayer graphene
Authors:
Bo Xie,
Jianpeng Liu
Abstract:
In this work, we present a theoretical research on the lattice relaxations, phonon properties, and relaxed electronic structures in magic-angle twisted bilayer graphene (TBG). We construct a continuum elastic model in order to study the lattice dynamics of magic-angle TBG, where both in-plane and out-of-plane lattice displacements are take into account. The fully relaxed lattice structure calculat…
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In this work, we present a theoretical research on the lattice relaxations, phonon properties, and relaxed electronic structures in magic-angle twisted bilayer graphene (TBG). We construct a continuum elastic model in order to study the lattice dynamics of magic-angle TBG, where both in-plane and out-of-plane lattice displacements are take into account. The fully relaxed lattice structure calculated using such a model is in quantitative agreement with experimental measurements. Furthermore, we investigate the phonon properties in magic-angle TBG using the continuum elastic model, where both the in-plane and out-of-plane phonon modes are included and treated on equal footing. We identify different types of moiré phonons including in-plane sliding modes, soft out-of-plane flexural modes, as well as out-of-plane breathing modes. The latter two types of phonon modes exhibit interesting monopolar, dipolar, quadrupolar, and octupolar-type out-of-plane vibration patterns. Additionally, we explore the impact of the relaxed moiré superlattice structure on the electronic band structures of magic-angle TBG using an effective continuum model, which shows nearly exact agreement with those calculated using a microscopic atomistic tight-binding approach. Our work lays foundation for further studies on the electron-phonon coupling effects and their interplay with $e$-$e$ interactions in magic-angle TBG.
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Submitted 26 May, 2023;
originally announced May 2023.
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Observation of Large-Number Corner Modes in $\mathbb{Z}$-class Higher-Order Topolectrical Circuits
Authors:
Yi Li,
Jia-Hui Zhang,
Feng Mei,
Biye Xie,
Ming-Hui Lu,
Jie Ma,
Liantuan Xiao,
Suotang Jia
Abstract:
Topological corner states are exotic topological boundary states that are bounded to zero-dimensional geometry even the dimension of systems is large than one. As an elegant physical correspondence, their numbers are dictated by the bulk topological invariants. So far, all previous realizations of HOTIs are hallmarked by $\mathbb{Z}_2$ topological invariants and therefore have only one corner stat…
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Topological corner states are exotic topological boundary states that are bounded to zero-dimensional geometry even the dimension of systems is large than one. As an elegant physical correspondence, their numbers are dictated by the bulk topological invariants. So far, all previous realizations of HOTIs are hallmarked by $\mathbb{Z}_2$ topological invariants and therefore have only one corner state at each corner. Here we report an experimental demonstration of $\mathbb{Z}$-class HOTI phases in electric circuits, hosting $N$ corner modes at each single corner structure. By measuring the impedance spectra and distributions, we clearly demonstrate the $\mathbb{Z}$-class HOTI phases, including the zero-energy corner modes and their density distributions. Moreover, we reveal that the local density of states (LDOS) at each corner for $N=4$ are equally distributed at four corner unit cells, prominently differing from $\mathbb{Z}_2$-class case where the LDOS only dominates over one corner unit cell. Our results extend the observation of HOTIs from $\mathbb{Z}_2$ class to $\mathbb{Z}$ class and the coexistence of spatially overlapped large number of corner modes which may enable exotic topological devices that require high degeneracy boundary states.
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Submitted 17 May, 2023;
originally announced May 2023.
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Disentangled higher-orbital bands and chiral symmetric topology in confined Mie resonance photonic crystals
Authors:
Jing Li,
Hongfei Wang,
Shiyin Jia,
Peng Zhan,
Minghui Lu,
Zhenlin Wang,
Yanfeng Chen,
Bi-Ye Xie
Abstract:
Topological phases based on tight-binding models have been extensively studied in recent decades. By mimicking the linear combination of atomic orbitals in tight-binding models based on the evanescent couplings between resonators in classical waves, numerous experimental demonstrations of topological phases have been successfully conducted. However, in dielectric photonic crystals, the Mie resonan…
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Topological phases based on tight-binding models have been extensively studied in recent decades. By mimicking the linear combination of atomic orbitals in tight-binding models based on the evanescent couplings between resonators in classical waves, numerous experimental demonstrations of topological phases have been successfully conducted. However, in dielectric photonic crystals, the Mie resonances' states decay too slowly as $1/r$ when $r$ $\to$ $\infty$, leading to intrinsically different physical properties between tight-binding models and dielectric photonic crystals. Here, we propose a confined Mie resonance photonic crystal by embedding perfect electric conductors in between dielectric rods, leading to a perfectly matched band structure as the tight-binding models with nearest-neighbour couplings. As a consequence, disentangled band structure spanned by higher atomic orbitals is observed. Moreover, we also achieve a three-dimensional photonic crystal with a complete photonic bandgap and third-order topology based on our design. Our implementation provides a versatile platform for studying exotic higher-orbital bands and achieving tight-binding-like 3D topological photonic crystals.
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Submitted 17 April, 2023;
originally announced April 2023.
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Tunable quantum criticalities in an isospin extended Hubbard model simulator
Authors:
Qiao Li,
Bin Cheng,
Moyu Chen,
Bo Xie,
Yongqin Xie,
Pengfei Wang,
Fanqiang Chen,
Zenglin Liu,
Kenji Watanabe,
Takashi Taniguchi,
Shi-Jun Liang,
Da Wang,
Chenjie Wang,
Qiang-Hua Wang,
Jianpeng Liu,
Feng Miao
Abstract:
Studying strong electron correlations has been an essential driving force for pushing the frontiers of condensed matter physics. In particular, in the vicinity of correlation-driven quantum phase transitions (QPTs), quantum critical fluctuations of multiple degrees of freedom facilitate exotic many-body states and quantum critical behaviors beyond Landau's framework. Recently, moiré heterostructur…
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Studying strong electron correlations has been an essential driving force for pushing the frontiers of condensed matter physics. In particular, in the vicinity of correlation-driven quantum phase transitions (QPTs), quantum critical fluctuations of multiple degrees of freedom facilitate exotic many-body states and quantum critical behaviors beyond Landau's framework. Recently, moiré heterostructures of van der Waals materials have been demonstrated as a highly tunable quantum platform for exploring fascinating strongly correlated quantum physics. Here, we report the observation of tunable quantum criticalities in an experimental simulator of extended Hubbard model with spin-valley isospins arising in chiral-stacked twisted double bilayer graphene. Scaling analysis shows a quantum two-stage criticality manifesting two distinct quantum critical points as the generalized Wigner crystal transits to a Fermi liquid by varying the displacement field, suggesting the emergence of a critical intermediate phase. The quantum two-stage criticality evolves into a quantum pseudo criticality as a high parallel magnetic field is applied. In such pseudo criticality, we find that the quantum critical scaling is only valid above a critical temperature, indicating a weak first-order QPT therein. Our results demonstrate a highly tunable solid-state simulator with intricate interplay of multiple degrees of freedom for exploring exotic quantum critical states and behaviors.
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Submitted 15 September, 2022;
originally announced September 2022.
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Bulk-LDOS Correspondence in Topological Insulators
Authors:
Biye Xie,
Renwen Huang,
Shiyin Jia,
Zemeng Lin,
Junzheng Hu,
Yao Jiang,
Shaojie Ma,
Peng Zhan,
Minghui Lu,
Zhenlin Wang,
Yanfeng Chen,
Shuang Zhang
Abstract:
Seeking the criterion for diagnosing topological phases in real materials has been one of the major tasks in topological physics. Currently, bulk-boundary correspondence based on spectral measurements of in gap topological boundary states and the fractional corner anomaly derived from the measurement of the fractional spectral charge are two main approaches to characterize topologically insulating…
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Seeking the criterion for diagnosing topological phases in real materials has been one of the major tasks in topological physics. Currently, bulk-boundary correspondence based on spectral measurements of in gap topological boundary states and the fractional corner anomaly derived from the measurement of the fractional spectral charge are two main approaches to characterize topologically insulating phases. However, these two methods require a complete band-gap with either in-gap states or strict spatial symmetry of the overall sample which significantly limits their applications to more generalized cases. Here we propose and demonstrate an approach to link the non-trivial hierarchical bulk topology to the multidimensional partition of local-density of states (LDOS) respectively, denoted as the bulk-LDOS correspondence. Specifically, in a finite-size topologically nontrivial photonic crystal, we observe that the distribution of LDOS is divided into three partitioned regions of the sample - the two-dimensional interior bulk area (avoiding edge and corner areas), one-dimensional edge region (avoiding the corner area), and zero-dimensional corner sites. In contrast, the LDOS is distributed across the entire two-dimensional bulk area across the whole spectrum for the topologically trivial cases. Moreover, we present the universality of this criterion by validating this correspondence in both a higher-order topological insulator without a complete band gap and with disorders. Our findings provide a general way to distinguish topological insulators and unveil the unexplored features of topological directional band-gap materials without in-gap states.
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Submitted 6 September, 2022;
originally announced September 2022.
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Direct measurement of acoustic spectral density and fractional topological charge
Authors:
Hao Ge,
Zi-Wei Long,
Xiang-Yuan Xu,
Yang Liu,
Bi-Ye Xie,
Jian-Hua Jiang,
Ming-Hui Lu,
Yan-Feng Chen
Abstract:
Local density-of-states (LDOS) is a fundamental spectral property that plays a central role in various physical phenomena such as wave-matter interactions. Here, we report on the direct measurement of the LDOS of acoustic systems and derive from which the fractional topological number in an acoustic Su-Schrieffer-Heeger system. The acoustic LDOS is quantified here with a state-of-the-art technique…
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Local density-of-states (LDOS) is a fundamental spectral property that plays a central role in various physical phenomena such as wave-matter interactions. Here, we report on the direct measurement of the LDOS of acoustic systems and derive from which the fractional topological number in an acoustic Su-Schrieffer-Heeger system. The acoustic LDOS is quantified here with a state-of-the-art technique through the measurement of the volume flow rate and the acoustic pressure with a local excitation-probe configuration. Based on this method, we study the acoustic Purcell effect and establish experimentally the important relation between the near-field LDOS and the far-field acoustic emission power. Moreover, we detect the LDOS in the one-dimensional acoustic Su-Schrieffer-Heeger model and observe the fractional topological number of the system. Our work unveils the important role of the LDOS in acoustic phenomena and paves the way toward characterizing and tailoring the LDOS in topological systems.
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Submitted 25 August, 2022;
originally announced August 2022.
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Dimensionality-controlled evolution of charge-transfer energy in digital nickelates superlattices
Authors:
Xiangle Lu,
Jishan Liu,
Nian Zhang,
Binping Xie,
Shuai Yang,
Wanling Liu,
Zhicheng Jiang,
Zhe Huang,
Yichen Yang,
Jin Miao,
Wei Li,
Soohyun Cho,
Zhengtai Liu,
Zhonghao Liu,
Dawei Shen
Abstract:
Fundamental understanding and control of the electronic structure evolution in rare-earth nickelates is a fascinating and meaningful issue, as well as being helpful to understand the mechanism of recently discovered superconductivity. Here we systematically study the dimensionality effect on the ground electronic state in high-quality (NdNiO3)m/(SrTiO3)1 superlattices through transport and soft x-…
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Fundamental understanding and control of the electronic structure evolution in rare-earth nickelates is a fascinating and meaningful issue, as well as being helpful to understand the mechanism of recently discovered superconductivity. Here we systematically study the dimensionality effect on the ground electronic state in high-quality (NdNiO3)m/(SrTiO3)1 superlattices through transport and soft x-ray absorption spectroscopy. The metal-to-insulator transition temperature decreases with the thickness of the NdNiO3 slab decreasing from bulk to 7 unit cells, then increases gradually as m further reduces to 1 unit cell. Spectral evidence demonstrates that the stabilization of insulating phase can be attributed to the increase of the charge-transfer energy between O 2p and Ni 3d bands. The prominent multiplet feature on the Ni L3 edge develops with the decrease of NdNiO3 slab thickness, suggesting the strengthening of the charge disproportionate state under the dimensional confinement. Our work provides convincing evidence that dimensionality is an effective knob to modulate the charge-transfer energy and thus the collective ground state in nickelates.
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Submitted 30 April, 2022;
originally announced May 2022.
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Acoustic topological Anderson insulators
Authors:
Hui Liu,
Boyang Xie,
Haonan Wang,
Wenwei Liu,
Zhancheng Li,
Hua Cheng,
Jianguo Tian,
Zhengyou Liu,
Shuqi Chen
Abstract:
Recent breakthrough on topological Anderson insulators revealed the breakdown of the traditional perception that sufficiently strong disorder may induce the appearance of topological protected transport states instead of destruction. Although topological Anderson insulators have been observed in various time-reversal symmetry breaking systems, the observation of topological Anderson insulators pro…
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Recent breakthrough on topological Anderson insulators revealed the breakdown of the traditional perception that sufficiently strong disorder may induce the appearance of topological protected transport states instead of destruction. Although topological Anderson insulators have been observed in various time-reversal symmetry breaking systems, the observation of topological Anderson insulators protected by time-reversal symmetry remains scarce, which are considered to be more promising in applications such as the integrated devices. Here, we report the experimental observation of topological Anderson insulator in a two-dimensional bilayer phononic crystal. The robust spin-dependent edge states, as evidence of topological Anderson insulating phase, are observed by introducing on-site disorder. In addition, spin Bott index was computed to identify the topological invariants of the system with disorder, which confirmed the occurrence of disorder-induced topological state. Our results reveal that the impurities and defects introduced in the processing of integrated devices may induce the formation of topological transport states, which are promising for the exploration of new routes for the integration devices design.
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Submitted 11 November, 2021;
originally announced November 2021.
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Alternating twisted mutilayer graphene: generic partition rules, double flat bands, and orbital magnetoelectric effect
Authors:
Bo Xie,
Shihao Zhang,
Jianpeng Liu
Abstract:
Twisted graphene systems have draw significant attention due to the discoveries of various correlated and topological phases. In particular, recently the alternating twisted trilayer graphene is discovered to exhibit unconventional superconductivity, which motivates us to study the electronic structures and possible interesting correlation effects of this class of alternating twisted graphene syst…
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Twisted graphene systems have draw significant attention due to the discoveries of various correlated and topological phases. In particular, recently the alternating twisted trilayer graphene is discovered to exhibit unconventional superconductivity, which motivates us to study the electronic structures and possible interesting correlation effects of this class of alternating twisted graphene systems. In this work we consider generic alternating twisted multilayer graphene (ATMG) systems with $M$-$L$-$N$ stacking configurations, in which the $M$ ($L$) graphene layers and the $L$ ($N$) layers are twisted by an angle $θ$ (-$θ$). Based on analysis from a simplified $\textbf{k}\!\cdot\!\textbf{p}$ model approach, we analytically derive generic partition rules for the low-energy electronic structures, which exhibit various intriguing band dispersions including one pair of flat bands, two pairs of flat bands, as well as flat bands co-existing with with Dirac cones, quadratic bands, or more generally $E(\mathbf{k})\!\sim\!k^J$ dispersions ($J$ is positive integer) for each spin and valley. Such unusual non-interacting electronic structures may have unconventional correlation effects. Especially for a mirror symmetric ATMG system with two pairs of flat bands (per spin per valley), we find that Coulomb interactions may drive the system into a state breaking both time-reversal and mirror symmetries, which can exhibit a novel type of orbital magnetoelectric effect due to the interwining of electric polarization and orbital magnetization orders in the symmetry-breaking state.
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Submitted 11 November, 2021;
originally announced November 2021.
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Observation of Non-Abelian Thouless Pump
Authors:
Oubo You,
Shanjun Liang,
Biye Xie,
Wenlong Gao,
Weimin Ye,
Jie Zhu,
Shuang Zhang
Abstract:
Thouless pump is a one-dimensional dynamic topological effect that stems from the same topological mechanism as the renowned two-dimensional Chern insulators, with one momentum dimension replaced by a time variant evolution parameter. The underlying physics is abelian, concerning topologies of individual bands. By introducing multi-band non-abelian topology into pumping, much richer physics is exp…
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Thouless pump is a one-dimensional dynamic topological effect that stems from the same topological mechanism as the renowned two-dimensional Chern insulators, with one momentum dimension replaced by a time variant evolution parameter. The underlying physics is abelian, concerning topologies of individual bands. By introducing multi-band non-abelian topology into pumping, much richer physics is expected that goes beyond the abelian counterpart. Here we report the observation of a non-abelian Thouless pump in an acoustic waveguide array with judiciously engineered coupling configurations. The observed non-abelian effect originates from time-evolution of eigen-states in Z_3 pump cycles that traverse across several band degeneracies in the parameter space in a three-band system. Interestingly, the pump of the eigenstates exhibits non-commutativity, i.e. the final state depends critically on the order of the pumping paths. Our study paves ways for exploring and utilizing non-abelian dynamical effects in classical systems.
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Submitted 17 October, 2021;
originally announced October 2021.
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Topological Disclination Pump
Authors:
Bi-Ye Xie,
Oubo You,
Shuang Zhang
Abstract:
A topological pump enables robust transport of quantized particles when the system parameters are varied in a cyclic process. In previous studies, topological pump was achieved inhomogeneous systems guaranteed by a topological invariant of the bulk band structure when time is included as an additional synthetic dimension. Recently, bulk-boundary correspondence has been generalized to the bulk-disc…
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A topological pump enables robust transport of quantized particles when the system parameters are varied in a cyclic process. In previous studies, topological pump was achieved inhomogeneous systems guaranteed by a topological invariant of the bulk band structure when time is included as an additional synthetic dimension. Recently, bulk-boundary correspondence has been generalized to the bulk-disclination correspondence, describing the emergence of topological bounded states in the crystallographic defects protected by the bulk topology. Here we show the topological pumping can happen between different disclination states with different chiralities in an inhomogeneous structure. Based on a generalized understanding of the charge pumping process, we explain the topological disclination pump by tracing the motion of Wannier centers in each unit cell. Besides, by constructing two disclination structures and introducing a symmetry-breaking perturbation, we achieve a topological pumping between different dislocation cores. Our result opens a route to study the topological pumping in inhomogeneous topological crystalline systems and provides a flexible platform for robust energy transport.
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Submitted 6 April, 2021;
originally announced April 2021.
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Chiral Decomposition of Twisted Graphene Multilayers with Arbitrary Stacking
Authors:
ShengNan Zhang,
Bo Xie,
QuanSheng Wu,
Jianpeng Liu,
Oleg V. Yazyev
Abstract:
We formulate the chiral decomposition rules that govern the electronic structure of a broad family of twisted $N+M$ multilayer graphene configurations that combine arbitrary stacking order and a mutual twist. We show that at the magic angle in the chiral limit the low-energy bands of such systems are composed of chiral pseudospin doublets which are energetically entangled with two flat bands per v…
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We formulate the chiral decomposition rules that govern the electronic structure of a broad family of twisted $N+M$ multilayer graphene configurations that combine arbitrary stacking order and a mutual twist. We show that at the magic angle in the chiral limit the low-energy bands of such systems are composed of chiral pseudospin doublets which are energetically entangled with two flat bands per valley induced by the moiré superlattice potential. The analytic analysis is supported by explicit numerical calculations based on realistic parameterization. We further show that applying vertical displacement fields can open up energy gaps between the pseudospin doublets and the two flat bands, such that the flat bands may carry nonzero valley Chern numbers. These results provide guidelines for the rational design of various topological and correlated states in generic twisted graphene multilayers.
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Submitted 22 December, 2020;
originally announced December 2020.
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Classical higher-order topological insulators
Authors:
Biye Xie,
Hai-Xiao Wang,
Xiujuan Zhang,
Peng Zhan,
Jian-Hua Jiang,
Minghui Lu,
Yanfeng Chen
Abstract:
Topological states nurtures the emergence of devices with unprecedented functions in photonics, plasmonics, acoustics and phononics. As one of the recently discovered members, higher-order topological insulators (HOTIs) have been increasingly explored, featuring lower-dimensional topological boundary states, leading to rich mechanisms for topological manipulation, guiding and trapping of classical…
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Topological states nurtures the emergence of devices with unprecedented functions in photonics, plasmonics, acoustics and phononics. As one of the recently discovered members, higher-order topological insulators (HOTIs) have been increasingly explored, featuring lower-dimensional topological boundary states, leading to rich mechanisms for topological manipulation, guiding and trapping of classical waves. Here, we provide an overview of current developments of HOTIs in classical waves including basic principles, unique physical properties, various experimental realizations, novel phenomena and potential applications. Based on these discussions, we remark on the trends and challenges in this field and the impacts of higher-order topology on other research fields.
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Submitted 29 January, 2021; v1 submitted 12 October, 2020;
originally announced October 2020.
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Critical couplings in topological-insulator waveguide-resonator systems observed in elastic waves
Authors:
Si-Yuan Yu,
Cheng He,
Xiao-Chen Sun,
Hong-Fei Wang,
Ji-Qian Wang,
Zi-Dong Zhang,
Bi-Ye Xie,
Yuan Tian,
Ming-Hui Lu,
Yan-Feng Chen
Abstract:
Waveguides and resonators are core components in the large-scale integration of electronics, photonics, and phononics, both in existing and future scenarios. In certain situations, there is critical coupling of the two components; i.e., no energy passes through the waveguide after the incoming wave couples into the resonator. The transmission spectral characteristics resulting from this phenomenon…
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Waveguides and resonators are core components in the large-scale integration of electronics, photonics, and phononics, both in existing and future scenarios. In certain situations, there is critical coupling of the two components; i.e., no energy passes through the waveguide after the incoming wave couples into the resonator. The transmission spectral characteristics resulting from this phenomenon are highly advantageous for signal filtering, switching, multiplexing, and sensing. In the present study, adopting an elastic-wave platform, we introduce topological insulator (TI), a remarkable achievement in condensed matter physics over the past decade, into a classical waveguide-ring-resonator configuration. Along with basic similarities with classical systems, a TI system has important differences and advantages, mostly owing to the spin-momentum locked transmission states at the TI boundaries. As an example, a two-port TI waveguide resonator can fundamentally eliminate upstream reflections while completely retaining useful transmission spectral characteristics, and maximize the energy in the resonator, with possible applications being novel signal processing, gyro/sensing, lasering, energy harvesting, and intense wave-matter interactions, using phonons, photons, or even electrons. The present work further enhances the confidence of using topological protection for practical device performance and functionalities, especially considering the crucial advantage of introducing (pseudo)spins to existing conventional configurations. More in-depth research on advancing phononics/photonics, especially on-chip, is foreseen.
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Submitted 21 August, 2020;
originally announced August 2020.
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Protecting Quantum Superposition and Entanglement with Photonic Higher-Order Topological Crystalline Insulator
Authors:
Yao Wang,
Bi-Ye Xie,
Yong-Heng Lu,
Yi-Jun Chang,
Hong-Fei Wang,
Jun Gao,
Zhi-Qiang Jiao,
Zhen Feng,
Xiao-Yun Xu,
Feng Mei,
Suotang Jia,
Ming-Hui Lu,
Xian-Min Jin
Abstract:
Higher-order topological insulator, as a newly found non-trivial material and structure, possesses a topological phase beyond the bulk-boundary correspondence. Here, we present an experimental observation of photonic higher-order topological crystalline insulator and its topological protection to quantum superposition and entanglement in a two-dimensional lattice. By freely writing the insulator s…
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Higher-order topological insulator, as a newly found non-trivial material and structure, possesses a topological phase beyond the bulk-boundary correspondence. Here, we present an experimental observation of photonic higher-order topological crystalline insulator and its topological protection to quantum superposition and entanglement in a two-dimensional lattice. By freely writing the insulator structure with femtosecond laser and directly measuring evolution dynamics with single-photon imaging techniques, we are able to observe the distinct features of the topological corner states in C_4 and C_2 photonic lattice symmetry. Especially, we propose and experimentally identify the topological corner states by exciting the photonic lattice with single-photon superposition state, and we examine the protection impact of topology on quantum entanglement for entangled photon states. The single-photon dynamics and the protected entanglement reveal an intrinsic topological protection mechanism isolating multi-partite quantum states from diffusion-induced decoherence. The higher-order topological crystalline insulator, built-in superposition state generation, heralded single-photon imaging and quantum entanglement demonstrated here link topology, material, and quantum physics, opening the door to wide investigations of higher-order topology and applications of topological enhancement in genuine quantum regime.
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Submitted 14 June, 2020;
originally announced June 2020.
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Higher-order Quantum Spin Hall Effect of Light
Authors:
Biye Xie,
Guangxu Su,
Hong-Fei Wang,
Feng Liu,
Lumang Hu,
Si-Yuan Yu,
Peng Zhan,
Ming-Hui Lu,
Zhenlin Wang,
Yan-Feng Chen
Abstract:
Band topology and related spin (or pseudo-spin) physics of photons provide us with a new dimension for manipulating light, which is potentially useful for information communication and data storage. Especially, the quantum spin Hall effect of light, where electromagnetic waves propagate along surfaces of samples with strong spin-momentum locking, paves the way for achieving topologically protected…
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Band topology and related spin (or pseudo-spin) physics of photons provide us with a new dimension for manipulating light, which is potentially useful for information communication and data storage. Especially, the quantum spin Hall effect of light, where electromagnetic waves propagate along surfaces of samples with strong spin-momentum locking, paves the way for achieving topologically protected photonic spin transport. Recently, the conventional bulk-edge correspondence of the band topology has been extended to higher-order cases that enables the explorations of topological states with codimensions larger than 1 such as hinge and corner states. Here, for the first time, we demonstrate a higherorder quantum spin Hall effect of light by utilizing an all-dielectric C6v-symmetric photonic crystal. We observe corner states with opposite pseudospin polarizations at different corners owing to nontrivial higher-order topology and finite spin-spin coupling. By applying the spin-polarized excitation sources, we can selectively excite the corner states at different spatial positions through spin-momentum-locked decaying edge states, resembling the quantum spin Hall effect in a higher-order manner. Our work which breaks the barriers between the spin photonics and higher-order topology opens the frontiers for studying lower-dimensional spinful classical surface waves and supports explorations in robust communications.
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Submitted 2 March, 2020;
originally announced March 2020.
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On the Polarization of Ligands by Proteins
Authors:
Soohaeng Yoo Willow,
Bing Xie,
Jason Lawrence,
Robert S. Eisenberg,
David D. L. Minh
Abstract:
Although ligand-binding sites in many proteins contain a high number density of charged side chains that can polarize small organic molecules and influence binding, the magnitude of this effect has not been studied in many systems. Here, we use a quantum mechanics/molecular mechanics (QM/MM) approach in which the ligand is the QM region to compute the ligand polarization energy of 286 protein-liga…
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Although ligand-binding sites in many proteins contain a high number density of charged side chains that can polarize small organic molecules and influence binding, the magnitude of this effect has not been studied in many systems. Here, we use a quantum mechanics/molecular mechanics (QM/MM) approach in which the ligand is the QM region to compute the ligand polarization energy of 286 protein-ligand complexes from the PDBBind Core Set (release 2016). We observe that the ligand polarization energy is linearly correlated with the magnitude of the electric field acting on the ligand, the magnitude of the induced dipole moment, and the classical polarization energy. The influence of protein and cation charges on the ligand polarization diminishes with the distance and is below 2 kcal/mol at 9 $\unicode{x212B}$ and 1 kcal/mol at 12 $\unicode{x212B}$. Considering both polarization and solvation appears essential to computing negative binding energies in some crystallographic complexes. Solvation, but not polarization, is essential for achieving moderate correlation with experimental binding free energies.
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Submitted 22 January, 2020;
originally announced January 2020.
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Dimensional hierarchy of higher-order topology in three-dimensional sonic crystals
Authors:
Xiujuan Zhang,
Bi-Ye Xie,
Hong-Fei Wang,
Xiangyuan Xu,
Yuan Tian,
Jian-Hua Jiang,
Ming-Hui Lu,
Yan-Feng Chen
Abstract:
Topological phases of matter have been extensively studied for their intriguing bulk and edge properties. Recently, higher-order topological insulators with boundary states that are two or more dimensions lower than the bulk states, have been proposed and investigated as novel states of matter. Previous implementations of higher-order topological insulators were based on two-dimensional (2D) syste…
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Topological phases of matter have been extensively studied for their intriguing bulk and edge properties. Recently, higher-order topological insulators with boundary states that are two or more dimensions lower than the bulk states, have been proposed and investigated as novel states of matter. Previous implementations of higher-order topological insulators were based on two-dimensional (2D) systems in which 1D gapped edge states and 0D localized corner states were observed. Here we theoretically design and experimentally realize a 3D higher-order topological insulator in a sonic crystal with a large topological band gap. We observe the coexistence of third-, second- and first-order topological boundary states with codimension three, two and one, respectively, indicating a dimensional hierarchy of higher-order topological phenomena in 3D crystals. Our acoustic metamaterial goes beyond the descriptions of tight-binding model and possesses a band structure which automatically breaks the chiral symmetry, leading to the separation of bulk, surface, hinge and corner states. Our study opens a new route toward higher-order topological phenomena in three-dimensions and paves the way for topological wave trapping and manipulation in a hierarchy of dimensions in a single system.
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Submitted 28 May, 2019; v1 submitted 12 May, 2019;
originally announced May 2019.
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Visualization of higher-order topological insulating phases in two-dimensional dielectric photonic crystals
Authors:
Bi-Ye Xie,
Guang-Xu Su,
Hong-Fei Wang,
Hai Su,
Xiao-Peng Shen,
Peng Zhan,
Ming-Hui Lu,
Zhen-Lin Wang,
Yan-Feng Chen
Abstract:
The studies of topological phases of matter have been extended from condensed matter physics to photonic systems, resulting in fascinating designs of robust photonic devices. Recently, higher-order topological insulators (HOTIs) have been investigated as a novel topological phase of matter beyond the conventional bulk-boundary correspondence. Previous studies of HOTIs have been mainly focused on t…
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The studies of topological phases of matter have been extended from condensed matter physics to photonic systems, resulting in fascinating designs of robust photonic devices. Recently, higher-order topological insulators (HOTIs) have been investigated as a novel topological phase of matter beyond the conventional bulk-boundary correspondence. Previous studies of HOTIs have been mainly focused on the topological multipole systems with negative coupling between lattice sites. Here we experimentally demonstrate that second-order topological insulating phases without negative coupling can be realized in two-dimensional dielectric photonic crystals (PCs). We visualize both one-dimensional topological edge states and zero-dimensional topological corner states by using near-field scanning technique. To characterize the topological properties of PCs, we define a novel topological invariant based on the bulk polarizations. Our findings open new research frontiers for searching HOTIs in dielectric PCs and provide a new mechanism for light-manipulating in a hierarchical way.
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Submitted 20 December, 2018; v1 submitted 15 December, 2018;
originally announced December 2018.
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Observation of second-order topological insulators in sonic crystals
Authors:
Xiujuan Zhang,
Hai-Xiao Wang,
Zhi-Kang Lin,
Yuan Tian,
Biye Xie,
Ming-Hui Lu,
Yan-Feng Chen,
Jian-Hua Jiang
Abstract:
Topological insulators with unique gapless edge states have revolutionized the understanding of electronic properties in solid materials. These gapless edge states are dictated by the topological invariants associated with the quantization of generalized Berry phases of the bulk energy bands through the bulk-edge correspondence, a paradigm that can also be extended to acoustic and photonic systems…
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Topological insulators with unique gapless edge states have revolutionized the understanding of electronic properties in solid materials. These gapless edge states are dictated by the topological invariants associated with the quantization of generalized Berry phases of the bulk energy bands through the bulk-edge correspondence, a paradigm that can also be extended to acoustic and photonic systems. Recently, high-order topological insulators (HOTIs) are proposed and observed, where the bulk topological invariants result in gapped edge states and in-gap corner or hinge states, going beyond the conventional bulk-edge correspondence. However, the existing studies on HOTIs are restricted to tight-binding models which cannot describe the energy bands of conventional sonic/photonic crystals that are due to multiple Bragg scatterings. Here, we report theoretical prediction and experimental observation of acoustic second-order topological insulators (SOTI) in two-dimensional (2D) sonic crystals (SCs) beyond the tight-binding picture. We observe gapped edge states and degenerate in-gap corner states which manifest bulk-edge correspondence in a hierarchy of dimensions. Moreover, topological transitions in both the bulk and edge states can be realized by tuning the angle of the meta-atoms in each unit-cell, leading to various conversion among bulk, edge and corner states. The emergent properties of the acoustic SOTIs open up a new route for topological designs of robust localized acoustic modes as well as topological transfer of acoustic energy between 2D, 1D and 0D modes.
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Submitted 3 July, 2018; v1 submitted 26 June, 2018;
originally announced June 2018.
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Second-order photonic topological insulator with corner states
Authors:
Bi Ye Xie,
Hong Fei Wang,
Hai-Xiao Wang,
Xue Yi Zhu,
Jian-Hua Jiang,
Ming Hui Lu,
Yan Feng Chen
Abstract:
Higher-order topological insulators (HOTIs) which go beyond the description of conventional bulk-boundary correspondence, broaden the understanding of topological insulating phases. Being mainly focused on electronic materials, HOTIs have not been found in photonic systems yet. In this article, we propose a type of two-dimensional second-order photonic crystals with zero-dimensional corner states…
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Higher-order topological insulators (HOTIs) which go beyond the description of conventional bulk-boundary correspondence, broaden the understanding of topological insulating phases. Being mainly focused on electronic materials, HOTIs have not been found in photonic systems yet. In this article, we propose a type of two-dimensional second-order photonic crystals with zero-dimensional corner states and one-dimensional boundary states for optical frequencies. All of these states are topologically non-trivial and can be understood based on the theory of topological polarization. Moreover, by tuning the easily-fabricated structure of the photonic crystals, we can realize different topological phases with unique topological boundary states straightforwardly. Our result can be generalized to higher dimensions and provides unprecedented venues for higher-order photonic topological insulators and semimetals.
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Submitted 1 December, 2018; v1 submitted 19 May, 2018;
originally announced May 2018.
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Phonon-enhanced superconductivity at the FeSe/SrTiO3 interface
Authors:
Q. Song,
T. L. Yu,
X. Lou,
B. P. Xie,
H. C. Xu,
C. H. P. Wen,
Q. Yao,
S. Y. Zhang,
X. T. Zhu,
J. D. Guo,
R. Peng,
D. L. Feng
Abstract:
The dream of room temperature superconductors has inspired intense research effort to find routes for enhancing the superconducting transition temperature (Tc). Therefore, single-layer FeSe on a SrTiO3 substrate, with its extraordinarily high Tc amongst all interfacial superconductors and iron based superconductors, is particularly interesting, but the mechanism underlying its high Tc has remained…
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The dream of room temperature superconductors has inspired intense research effort to find routes for enhancing the superconducting transition temperature (Tc). Therefore, single-layer FeSe on a SrTiO3 substrate, with its extraordinarily high Tc amongst all interfacial superconductors and iron based superconductors, is particularly interesting, but the mechanism underlying its high Tc has remained mysterious. Here we show through isotope effects that electrons in FeSe couple with the oxygen phonons in the substrate, and the superconductivity is enhanced linearly with the coupling strength atop the intrinsic superconductivity of heavily-electron-doped FeSe. Our observations solve the enigma of FeSe/SrTiO3, and experimentally establish the critical role and unique behavior of electron-phonon forward scattering in a correlated high-Tc superconductor. The effective cooperation between interlayer electron-phonon interactions and correlations suggests a path forward in developing more high-Tc interfacial superconductors, and may shed light on understanding the high Tc of bulk high temperature superconductors with layered structures.
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Submitted 19 October, 2017;
originally announced October 2017.
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Superconductivity across Lifshitz transition and anomalous insulating state in surface K-dosed (Li0.8Fe0.2OH)FeSe
Authors:
M. Q. Ren,
Y. J. Yan,
X. H. Niu,
R. Tao,
D. Hu,
R. Peng,
B. P. Xie,
J. Zhao,
T. Zhang,
D. L. Feng
Abstract:
In the iron-based superconductors, understanding the relation between superconductivity and electronic structure upon doping is crucial for exploring the pairing mechanism. Recently it was found that in iron selenide (FeSe), enhanced superconductivity (Tc over 40K) can be achieved via electron doping, with the Fermi surface only comprising M-centered electron pockets. Here by utilizing surface pot…
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In the iron-based superconductors, understanding the relation between superconductivity and electronic structure upon doping is crucial for exploring the pairing mechanism. Recently it was found that in iron selenide (FeSe), enhanced superconductivity (Tc over 40K) can be achieved via electron doping, with the Fermi surface only comprising M-centered electron pockets. Here by utilizing surface potassium dosing, scanning tunneling microscopy/spectroscopy (STM/STS) and angle-resolved photoemission spectroscopy (ARPES), we studied the electronic structure and superconductivity of (Li0.8Fe0.2OH)FeSe in the deep electron-doped regime. We find that a Γ-centered electron band, which originally lies above the Fermi level (EF), can be continuously tuned to cross EF and contribute a new electron pocket at Γ. When this Lifshitz transition occurs, the superconductivity in the M-centered electron pocket is slightly suppressed; while a possible superconducting gap with small size (up to ~5 meV) and a dome-like doping dependence is observed on the new Γ electron pocket. Upon further K dosing, the system eventually evolves into an insulating state. Our findings provide new clues to understand superconductivity versus Fermi surface topology and the correlation effect in FeSe-based superconductors.
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Submitted 18 August, 2017;
originally announced August 2017.
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The electronic structure and magnetic phase transition of hexagonal FeSe thin films studied by photoemission spectroscopy
Authors:
S. Y. Tan,
C. H. P. Wen,
M. Xia,
J. Jiang,
Q. Song,
B. P. Xie,
X. C. Lai,
D. L. Feng
Abstract:
Hexagonal FeSe thin films were grown on SrTiO3 substrates and the temperature and thickness dependence of their electronic structures were studied. The hexagonal FeSe is found to be metallic and electron doped, whose Fermi surface consists of six elliptical electron pockets. With decreased temperature, parts of the bands shift downward to high binding energy while some bands shift upwards to EF. T…
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Hexagonal FeSe thin films were grown on SrTiO3 substrates and the temperature and thickness dependence of their electronic structures were studied. The hexagonal FeSe is found to be metallic and electron doped, whose Fermi surface consists of six elliptical electron pockets. With decreased temperature, parts of the bands shift downward to high binding energy while some bands shift upwards to EF. The shifts of these bands begin around 300 K and saturate at low temperature, indicating a magnetic phase transition temperature of about 300 K. With increased film thickness, the Fermi surface topology and band structure show no obvious change except some minor quantum size effect. Our paper reports the first electronic structure of hexagonal FeSe, and shows that the possible magnetic transition is driven by large scale electronic structure reconstruction.
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Submitted 6 July, 2017; v1 submitted 17 April, 2017;
originally announced April 2017.
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Electronic structure of FeS
Authors:
J. Miao,
X. H. Niu,
D. F. Xu,
Q. Yao,
Q. Y. Chen,
T. P. Ying,
S. Y. Li,
Y. F. Fang,
J. C. Zhang,
S. Ideta,
K. Tanaka,
B. P. Xie,
D. L. Feng,
Fei Chen
Abstract:
Here we report the electronic structure of FeS, a recently identified iron-based superconductor. Our high-resolution angle-resolved photoemission spectroscopy studies show two hole-like ($α$ and $β$) and two electron-like ($η$ and $δ$) Fermi pockets around the Brillouin zone center and corner, respectively, all of which exhibit moderate dispersion along $k_z$. However, a third hole-like band (…
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Here we report the electronic structure of FeS, a recently identified iron-based superconductor. Our high-resolution angle-resolved photoemission spectroscopy studies show two hole-like ($α$ and $β$) and two electron-like ($η$ and $δ$) Fermi pockets around the Brillouin zone center and corner, respectively, all of which exhibit moderate dispersion along $k_z$. However, a third hole-like band ($γ$) is not observed, which is expected around the zone center from band calculations and is common in iron-based superconductors. Since this band has the highest renormalization factor and is known to be the most vulnerable to defects, its absence in our data is likely due to defect scattering --- and yet superconductivity can exist without coherent quasiparticles in the $γ$ band. This may help resolve the current controversy on the superconducting gap structure of FeS. Moreover, by comparing the $β$ bandwidths of various iron chalcogenides, including FeS, FeSe$_{1-x}$S$_x$, FeSe, and FeSe$_{1-x}$ Te$_x$, we find that the $β$ bandwidth of FeS is the broadest. However, the band renormalization factor of FeS is still quite large, when compared with the band calculations, which indicates sizable electron correlations. This explains why the unconventional superconductivity can persist over such a broad range of isovalent substitution in FeSe$_{1-x}$Te$_{x}$ and FeSe$_{1-x}$S$_{x}$.
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Submitted 25 March, 2017;
originally announced March 2017.
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Presence of Exotic Electronic Surface States in LaBi and LaSb
Authors:
X. H. Niu,
D. F. Xu,
Y. H. Bai,
Q. Song,
X. P. Shen,
B. P. Xie,
Z. Sun,
Y. B. Huang,
D. C. Peets,
D. L. Feng
Abstract:
Extremely high magnetoresistance (XMR) in the lanthanum monopnictides La$X$ ($X$ = Sb, Bi) has recently attracted interest in these compounds as candidate topological materials. However, their perfect electron-hole compensation provides an alternative explanation, so the possible role of topological surface states requires verification through direct observation. Our angle-resolved photoemission s…
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Extremely high magnetoresistance (XMR) in the lanthanum monopnictides La$X$ ($X$ = Sb, Bi) has recently attracted interest in these compounds as candidate topological materials. However, their perfect electron-hole compensation provides an alternative explanation, so the possible role of topological surface states requires verification through direct observation. Our angle-resolved photoemission spectroscopy (ARPES) data reveal multiple Dirac-like surface states near the Fermi level in both materials. Intriguingly, we have observed circular dichroism in both surface and near-surface bulk bands. Thus the spin-orbit coupling-induced orbital and spin angular momentum textures may provide a mechanism to forbid backscattering in zero field, suggesting that surface and near-surface bulk bands may contribute strongly to XMR in La$X$. The extremely simple rock salt structure of these materials and the ease with which high-quality crystals can be prepared suggests that they may be an ideal platform for further investigation of topological matter.
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Submitted 1 November, 2016; v1 submitted 14 July, 2016;
originally announced July 2016.
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Tunable Fe-vacancy disorder-order transition in FeSe thin films
Authors:
Y. Fang,
D. H. Xie,
W. Zhang,
F. Chen,
W. Feng,
B. P. Xie,
D. L. Feng,
X. C. Lai,
S. Y. Tan
Abstract:
Various Fe-vacancy orders have been reported in tetragonal Fe1-xSe single crystals and nanowires/nanosheets, which are similar to those found in alkali metal intercalated A1-xFe2-ySe2 superconductors. Here we report the in-situ angle-resolved photoemission spectroscopy study of Fe-vacancy disordered and ordered phases in FeSe multi-layer thin films grown by molecular beam epitaxy. Low temperature…
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Various Fe-vacancy orders have been reported in tetragonal Fe1-xSe single crystals and nanowires/nanosheets, which are similar to those found in alkali metal intercalated A1-xFe2-ySe2 superconductors. Here we report the in-situ angle-resolved photoemission spectroscopy study of Fe-vacancy disordered and ordered phases in FeSe multi-layer thin films grown by molecular beam epitaxy. Low temperature annealed FeSe films are identified to be Fe-vacancy disordered phase and electron doped. Further long-time low temperature anneal can change the Fe-vacancy disordered phase to ordered phase, which is found to be semiconductor/insulator with (root 5) x (root 5) superstructure and can be reversely changed to disordered phase with high temperature anneal. Our results reveal that the disorder-order transition in FeSe thin films can be simply tuned by vacuum anneal and the (root 5) x (root 5) Fe-vacancy ordered phase is more likely the parent phase of FeSe.
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Submitted 17 November, 2015;
originally announced November 2015.
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Observation of Dirac Cone Band Dispersion in FeSe Thin Films by Photoemission Spectroscopy
Authors:
S. Y. Tan,
Y. Fang,
D. H. Xie,
W. Feng,
C. H. P. Wen,
Q. Song,
W. Zhang,
Q. Y. Chen,
Y. Zhang,
L. Z. Luo,
B. P. Xie,
D. L. Feng,
X. C. Lai
Abstract:
The electronic structure of FeSe thin films grown on SrTiO3 substrate is studied by angle-resolved photoemission spectroscopy (ARPES). We reveal the existence of Dirac cone band dispersions in FeSe thin films thicker than 1 Unit Cell below the nematic transition temperature, whose apex are located -10 meV below Fermi energy. The evolution of Dirac cone electronic structure for FeSe thin films as f…
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The electronic structure of FeSe thin films grown on SrTiO3 substrate is studied by angle-resolved photoemission spectroscopy (ARPES). We reveal the existence of Dirac cone band dispersions in FeSe thin films thicker than 1 Unit Cell below the nematic transition temperature, whose apex are located -10 meV below Fermi energy. The evolution of Dirac cone electronic structure for FeSe thin films as function of temperature, thickness and cobalt doping is systematically studied. The Dirac cones are found to be coexisted with the nematicity in FeSe, disappear when nematicity is suppressed. Our results provide some indication that the spin degrees of freedom may play some kind of role in the nematicity of FeSe.
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Submitted 29 August, 2015;
originally announced August 2015.
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Anomalous correlation effects and unique phase diagram of electron doped FeSe revealed by angle resolved photoemission spectroscopy
Authors:
C. H. P. Wen,
H. C. Xu,
C. Chen,
Z. C. Huang,
Y. J. Pu,
Q. Song,
B. P. Xie,
Mahmoud Abdel-Hafiez,
D. A. Chareev,
A. N. Vasiliev,
R. Peng,
D. L. Feng
Abstract:
In FeSe-derived superconductors, the lack of a systematic and clean control on the carrier concentration prevents the comprehensive understanding on the phase diagram and the interplay between different phases. Here by K dosing and angle resolved photoemission study on thick FeSe films and FeSe$_{0.93}$S$_{0.07}$ bulk crystals, the phase diagram of FeSe as a function of electron doping is establis…
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In FeSe-derived superconductors, the lack of a systematic and clean control on the carrier concentration prevents the comprehensive understanding on the phase diagram and the interplay between different phases. Here by K dosing and angle resolved photoemission study on thick FeSe films and FeSe$_{0.93}$S$_{0.07}$ bulk crystals, the phase diagram of FeSe as a function of electron doping is established, which is extraordinarily different from other Fe-based superconductors. The correlation strength remarkably increases with increasing doping, while an insulting phase emerges in the heavily overdoped regime. Between the nematic phase and the insulating phase, a dome of enhanced superconductivity is observed, with the maximum superconducting transition temperature of 44$\pm$2~K. The enhanced superconductivity is independent of the thickness of FeSe, indicating that it is intrinsic to FeSe. Our findings provide an ideal system with variable doping for understanding the different phases and rich physics in the FeSe family.
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Submitted 24 August, 2015;
originally announced August 2015.
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Surface electronic structure and evidence of plain s-wave superconductivity in (Li0.8Fe0.2)OHFeSe
Authors:
Y. J. Yan,
W. H. Zhang,
M. Q. Ren,
X. Liu,
X. F. Lu,
N. Z. Wang,
X. H. Niu,
Q. Fan,
J. Miao,
R. Tao,
B. P. Xie,
X. H. Chen,
T. Zhang,
D. L. Feng
Abstract:
(Li0.8Fe0.2)OHFeSe is a newly-discovered intercalated iron-selenide superconductor with a Tc above 40 K, which is much higher than the Tc of bulk FeSe (8 K). Here we report a systematic study of (Li0.8Fe0.2)OHFeSe by low temperature scanning tunneling microscopy (STM). We observed two kinds of surface terminations, namely FeSe and (Li0.8Fe0.2)OH surfaces. On the FeSe surface, the superconducting s…
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(Li0.8Fe0.2)OHFeSe is a newly-discovered intercalated iron-selenide superconductor with a Tc above 40 K, which is much higher than the Tc of bulk FeSe (8 K). Here we report a systematic study of (Li0.8Fe0.2)OHFeSe by low temperature scanning tunneling microscopy (STM). We observed two kinds of surface terminations, namely FeSe and (Li0.8Fe0.2)OH surfaces. On the FeSe surface, the superconducting state is fully gapped with double coherence peaks, and a vortex core state with split peaks near EF is observed. Through quasi-particle interference (QPI) measurements, we clearly observed intra- and inter-pocket scatterings in between the electron pockets at the M point, as well as some evidence of scattering that connects gamma and M points. Upon applying magnetic field, the QPI intensity of all the scattering channels are found to behave similarly. Furthermore, we studied impurity effects on the superconductivity by investigating intentionally introduced impurities and intrinsic defects. We observed that magnetic impurities such as Cr adatoms can induce in-gap states and suppress superconductivity. However, nonmagnetic impurities such as Zn adatoms do not induce visible in-gap states. Meanwhile, we show that Zn adatoms can induce in-gap states in thick FeSe films, which is believed to have an (s+-)wave pairing symmetry. Our experimental results suggest it is likely that (Li0.8Fe0.2)OHFeSe is a plain s-wave superconductor, whose order parameter has the same sign on all Fermi surface sections.
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Submitted 4 October, 2016; v1 submitted 9 July, 2015;
originally announced July 2015.
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Signature of high temperature superconductivity in electron doped Sr2IrO4
Authors:
Y. J. Yan,
M. Q. Ren,
H. C. Xu,
B. P. Xie,
R. Tao,
H. Y. Choi,
N. Lee,
Y. J. Choi,
T. Zhang,
D. L. Feng
Abstract:
Sr2IrO4 was predicted to be a high temperature superconductor upon electron doping since it highly resembles the cuprates in crystal structure, electronic structure and magnetic coupling constants. Here we report a scanning tunneling microscopy/spectroscopy (STM/STS) study of Sr2IrO4 with surface electron doping by depositing potassium (K) atoms. At the 0.5-0.7 monolayer (ML) K coverage, we observ…
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Sr2IrO4 was predicted to be a high temperature superconductor upon electron doping since it highly resembles the cuprates in crystal structure, electronic structure and magnetic coupling constants. Here we report a scanning tunneling microscopy/spectroscopy (STM/STS) study of Sr2IrO4 with surface electron doping by depositing potassium (K) atoms. At the 0.5-0.7 monolayer (ML) K coverage, we observed a sharp, V-shaped gap with about 95% loss of density of state (DOS) at EFand visible coherence peaks. The gap magnitude is 25-30 meV for 0.5-0.6 ML K coverage and it closes around 50 K. These behaviors exhibit clear signature of superconductivity. Furthermore, we found that with increased electron doping, the system gradually evolves from an insulating state to a normal metallic state, via a pseudogap-like state and possible superconducting state. Our data suggest possible high temperature superconductivity in electron doped Sr2IrO4, and its remarkable analogy to the cuprates.
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Submitted 22 June, 2015;
originally announced June 2015.
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Identification of prototypical Brinkman-Rice Mott physics in a class of iron chalcogenides superconductors
Authors:
X. H. Niu,
S. D. Chen,
J. Jiang,
Z. R. Ye,
T. L. Yu,
D. F. Xu,
M. Xu,
Y. Feng,
Y. J. Yan,
B. P. Xie,
J. Zhao,
D. C. Gu,
L. L. Sun,
Qianhui Mao,
Hangdong Wang,
Minghu Fang,
C. J. Zhang,
J. P. Hu,
Z. Sun,
D. L. Feng
Abstract:
The 122$^{*}$ series of iron-chalcogenide superconductors, for example K$_x$Fe$_{2-y}$Se$_{2}$, only possesses electron Fermi pockets. Their distinctive electronic structure challenges the picture built upon iron pnictide superconductors, where both electron and hole Fermi pockets coexist. However, partly due to the intrinsic phase separation in this family of compounds, many aspects of their beha…
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The 122$^{*}$ series of iron-chalcogenide superconductors, for example K$_x$Fe$_{2-y}$Se$_{2}$, only possesses electron Fermi pockets. Their distinctive electronic structure challenges the picture built upon iron pnictide superconductors, where both electron and hole Fermi pockets coexist. However, partly due to the intrinsic phase separation in this family of compounds, many aspects of their behavior remain elusive. In particular, the evolution of the 122$^{*}$ series of iron-chalcogenides with chemical substitution still lacks a microscopic and unified interpretation. Using angle-resolved photoemission spectroscopy, we studied a major fraction of 122$^{*}$ iron-chalcogenides, including the isovalently `doped' K$_x$Fe$_{2-y}$Se$_{2-z}$S$_z$, Rb$_x$Fe$_{2-y}$Se$_{2-z}$Te$_z$ and (Tl,K)$_x$Fe$_{2-y}$Se$_{2-z}$S$_z$. We found that the bandwidths of the low energy Fe \textit{3d} bands in these materials depend on doping; and more crucially, as the bandwidth decreases, the ground state evolves from a metal to a superconductor, and eventually to an insulator, yet the Fermi surface in the metallic phases is unaffected by the isovalent dopants. Moreover, the correlation-driven insulator found here with small band filling may be a novel insulating phase. Our study shows that almost all the known 122$^{*}$-series iron chalcogenides can be understood {\it via} one unifying phase diagram which implies that moderate correlation strength is beneficial for the superconductivity.
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Submitted 23 February, 2016; v1 submitted 12 June, 2015;
originally announced June 2015.
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Surface electronic structure and isotropic superconducting gap in (Li$_{0.8}$Fe$_{0.2}$)OHFeSe
Authors:
X. H. Niu,
R. Peng,
H. C. Xu,
Y. J. Yan,
J. Jiang,
D. F. Xu,
T. L. Yu,
Q. Song,
Z. C. Huang,
Y. X. Wang,
B. P. Xie,
X. F. Lu,
N. Z. Wang,
X. H. Chen,
Z. Sun,
D. L. Feng
Abstract:
Using angle-resolved photoemission spectroscopy (ARPES), we revealed the surface electronic structure and superconducting gap of (Li$_{0.8}$Fe$_{0.2}$)OHFeSe, an intercalated FeSe-derived superconductor without antiferromagnetic phase or Fe-vacancy order in the FeSe layers, and with a superconducting transition temperature ($T_c$) $\sim$ 40 K. We found that (Li$_{0.8}$Fe$_{0.2}$)OH layers dope ele…
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Using angle-resolved photoemission spectroscopy (ARPES), we revealed the surface electronic structure and superconducting gap of (Li$_{0.8}$Fe$_{0.2}$)OHFeSe, an intercalated FeSe-derived superconductor without antiferromagnetic phase or Fe-vacancy order in the FeSe layers, and with a superconducting transition temperature ($T_c$) $\sim$ 40 K. We found that (Li$_{0.8}$Fe$_{0.2}$)OH layers dope electrons into FeSe layers. The electronic structure of surface FeSe layers in (Li$_{0.8}$Fe$_{0.2}$)OHFeSe resembles that of Rb$_x$Fe$_{2-y}$Se$_2$ except that it only contains half of the carriers due to the polar surface, suggesting similar quasiparticle dynamics between bulk (Li$_{0.8}$Fe$_{0.2}$)OHFeSe and Rb$_x$Fe$_{2-y}$Se$_2$. Superconducting gap is clearly observed below $T_c$, with an isotropic distribution around the electron Fermi surface. Compared with $A_x$Fe$_{2-y}$Se$_2$ (\textit{A}=K, Rb, Cs, Tl/K), the higher $T_c$ in (Li$_{0.8}$Fe$_{0.2}$)OHFeSe might be attributed to higher homogeneity of FeSe layers or to some unknown roles played by the (Li$_{0.8}$Fe$_{0.2}$)OH layers.
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Submitted 9 June, 2015;
originally announced June 2015.
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Photoemission study of the electronic structure and charge density waves of Na2Ti2Sb2O
Authors:
S. Y. Tan,
J. Jiang,
Z. R. Ye,
X. H. Niu,
Y. Song,
C. L. Zhang,
P. C. Dai,
B. P. Xie,
X. C. Lai,
D. L. Feng
Abstract:
The electronic structure of Na2Ti2Sb2O, a parent compound of the newly discovered titanium-based oxypnictide superconductors, is studied by photon energy and polarization dependent angle-resolved photoemission spectroscopy (ARPES). The obtained band structure and Fermi surface agree well with the band structure calculation of Na2Ti2Sb2O in the non-magnetic state, which indicating that there is no…
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The electronic structure of Na2Ti2Sb2O, a parent compound of the newly discovered titanium-based oxypnictide superconductors, is studied by photon energy and polarization dependent angle-resolved photoemission spectroscopy (ARPES). The obtained band structure and Fermi surface agree well with the band structure calculation of Na2Ti2Sb2O in the non-magnetic state, which indicating that there is no magnetic order in Na2Ti2Sb2O and the electronic correlation is weak. Polarization dependent ARPES results suggest the multi-band and multi-orbital nature of Na2Ti2Sb2O. Photon energy dependent ARPES results suggest that the electronic structure of Na2Ti2Sb2O is rather two-dimensional. Moreover, we find a density wave energy gap forms below the transition temperature and reaches 65 meV at 7 K, indicating that Na2Ti2Sb2O is likely a weakly correlated CDW material in the strong electron-phonon interaction regime.
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Submitted 7 May, 2015;
originally announced May 2015.
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Plain s-wave superconductivity in single-layer FeSe on SrTiO3 probed by scanning tunneling microscopy
Authors:
Q. Fan,
W. H. Zhang,
X. Liu,
Y. J. Yan,
M. Q. Ren,
R. Peng,
H. C. Xu,
B. P. Xie,
J. P. Hu,
T. Zhang,
D. L. Feng
Abstract:
Single-layer FeSe film on SrTiO3(001) was recently found to be the champion of interfacial superconducting systems, with a much enhanced superconductivity than the bulk iron-based superconductors. Its superconducting mechanism is of great interest. Although the film has a simple Fermi surface topology, its pairing symmetry is unsettled. Here by using low-temperature scanning tunneling microscopy (…
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Single-layer FeSe film on SrTiO3(001) was recently found to be the champion of interfacial superconducting systems, with a much enhanced superconductivity than the bulk iron-based superconductors. Its superconducting mechanism is of great interest. Although the film has a simple Fermi surface topology, its pairing symmetry is unsettled. Here by using low-temperature scanning tunneling microscopy (STM), we systematically investigated the superconductivity of single-layer FeSe/SrTiO3(001) films. We observed fully gapped tunneling spectrum and magnetic vortex lattice in the film. Quasi-particle interference (QPI) patterns reveal scatterings between and within the electron pockets, and put constraints on possible pairing symmetries. By introducing impurity atoms onto the sample, we show that the magnetic impurities (Cr, Mn) can locally suppress the superconductivity but the non-magnetic impurities (Zn, Ag and K) cannot. Our results indicate that single-layer FeSe/SrTiO3 has a plain s-wave paring symmetry whose order parameter has the same phase on all Fermi surface sections.
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Submitted 8 April, 2015;
originally announced April 2015.
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Signature of strong spin-orbital coupling in the large non-saturating magnetoresistance material WTe2
Authors:
J. Jiang,
F. Tang,
X. C. Pan,
H. M. Liu,
X. H. Niu,
Y. X. Wang,
D. F. Xu,
H. F. Yang,
B. P. Xie,
F. Q. Song,
X. G. Wan,
D. L. Feng
Abstract:
We report the detailed electronic structure of WTe$_2$ by high resolution angle-resolved photoemission spectroscopy. Unlike the simple one electron plus one hole pocket type of Fermi surface topology reported before, we resolved a rather complicated Fermi surface of WTe$_2$. Specifically, there are totally nine Fermi pockets, including one hole pocket at the Brillouin zone center $Γ$, and two hole…
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We report the detailed electronic structure of WTe$_2$ by high resolution angle-resolved photoemission spectroscopy. Unlike the simple one electron plus one hole pocket type of Fermi surface topology reported before, we resolved a rather complicated Fermi surface of WTe$_2$. Specifically, there are totally nine Fermi pockets, including one hole pocket at the Brillouin zone center $Γ$, and two hole pockets and two electron pockets on each side of $Γ$ along the $Γ$-$X$ direction. Remarkably, we have observed circular dichroism in our photoemission spectra, which suggests that the orbital angular momentum exhibits a rich texture at various sections of the Fermi surface. As reported previously for topological insulators and Rashiba systems, such a circular dichroism is a signature for spin-orbital coupling (SOC). This is further confirmed by our density functional theory calculations, where the spin texture is qualitatively reproduced as the conjugate consequence of SOC. Since the backscattering processes are directly involved with the resistivity, our data suggest that the SOC and the related spin and orbital angular momentum textures may be considered in the understanding of the anomalous magnetoresistance of WTe$_2$.
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Submitted 4 March, 2015;
originally announced March 2015.
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Scanning tunneling microscopy study of the possible topological surface states in BiTeCl
Authors:
Y. J. Yan,
M. Q. Ren,
X. Liu,
Z. C. Huang,
J. Jiang,
Q. Fan,
J. Miao,
B. P. Xie,
T. Zhang,
D. L. Feng
Abstract:
Recently, the non-centrosymmetric bismuth tellurohalides such as BiTeCl are being studied as possible candidates of topological insulators. While some photoemission studies showed that BiTeCl is an inversion asymmetric topological insulator, others showed that it is a normal semiconductor with Rashba splitting. Meanwhile, first-principle calculationsfailed to confirm the existence of topological s…
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Recently, the non-centrosymmetric bismuth tellurohalides such as BiTeCl are being studied as possible candidates of topological insulators. While some photoemission studies showed that BiTeCl is an inversion asymmetric topological insulator, others showed that it is a normal semiconductor with Rashba splitting. Meanwhile, first-principle calculationsfailed to confirm the existence of topological surface states in BiTeCl so far. Therefore, the topological nature of BiTeCl requires further investigation. Here we report low temperature scanning tunneling microscopy study on the surface states of BiTeCl single crystals. On the tellurium-terminated surfaces with low defect density, strong evidences for topological surface states are found in the quasi-particle interference patterns generated by the scattering of these states, both in the anisotropy of the scattering vectors and the fast decay of the interference near step edges. Meanwhile, on samples with much higher defect densities, we observed surface states that behave differently. Our results help to resolve the current controversy on the topological nature of BiTeCl.
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Submitted 25 February, 2015;
originally announced February 2015.
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The weak electronic correlations and absence of heavy Fermion state in KNi$_2$Se$_2$
Authors:
Q. Fan,
X. P. Shen,
M. Y. Li,
D. W. Shen,
W. Li,
X. M. Xie,
Q. Q. Ge,
Z. R. Ye,
S. Y. Tan,
X. H. Niu,
B. P. Xie,
D. L. Feng
Abstract:
We have studied the low-lying electronic structure of a new ThCr$_2$Si$_2$-type superconductor KNi$_2$Se$_2$ with angle-resolved photoemission spectroscopy. Three bands intersect the Fermi level, forming complicated Fermi surface topology, which is sharply different from its isostructural superconductor K$_x$Fe$_{2-y}$Se$_2$. The Fermi surface shows weak variation along the $k_z$ direction, indica…
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We have studied the low-lying electronic structure of a new ThCr$_2$Si$_2$-type superconductor KNi$_2$Se$_2$ with angle-resolved photoemission spectroscopy. Three bands intersect the Fermi level, forming complicated Fermi surface topology, which is sharply different from its isostructural superconductor K$_x$Fe$_{2-y}$Se$_2$. The Fermi surface shows weak variation along the $k_z$ direction, indicating its quasi-two-dimensional nature. Further comparison with the density functional theory calculations demonstrates that there exist relatively weak correlations and substantial hybridization of the Ni 3$d$ and the Se 4$p$ orbitals in the low-lying electronic structure. Our results indicate that the large density of states at the Fermi energy leads to the reported mass enhancement based on the specific heat measurements. Moreover, no anomaly is observed in the spectra when entering the fluctuating charge density wave state reported earlier.
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Submitted 24 November, 2014;
originally announced November 2014.
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Significant contribution of As 4p orbitals to the low-lying electronic structure of 112-type iron-based superconductor Ca0.9La0.1FeAs2
Authors:
M. Y. Li,
Z. T. Liu,
W. Zhou,
H. F. Yang,
D. W. Shen,
W. Li,
J. Jiang,
X. H. Niu,
B. P. Xie,
Y. Sun,
C. C. Fan,
Q. Yao,
J. S. Liu,
Z. X. Shi,
X. M. Xie
Abstract:
We report a systematic polarization-dependent angle-resolved photoemission spectroscopy study of the three-dimensional electronic structure of the recently discovered 112-type iron-based superconductor Ca1-xLaxFeAs2 (x = 0.1). Besides the commonly reported three hole-like and two electron-like bands in iron-based superconductors, we resolve one additional hole-like band around the zone center and…
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We report a systematic polarization-dependent angle-resolved photoemission spectroscopy study of the three-dimensional electronic structure of the recently discovered 112-type iron-based superconductor Ca1-xLaxFeAs2 (x = 0.1). Besides the commonly reported three hole-like and two electron-like bands in iron-based superconductors, we resolve one additional hole-like band around the zone center and one more fast-dispersing band near the X point in the vicinity of Fermi level. By tuning the polarization and the energy of incident photons,we are able to identify the specific orbital characters and the kz dependence of all bands. Combining with band calculations, we find As 4pz and 4px (4py) orbitals contribute significantly to the additional three-dimensional hole-like band and the narrow band, respectively. Also, there are considerable hybridization between the As 4p zand Fe 3d orbitals in the additional hole-like band, which suggests the strong coupling between the unique arsenic zigzag bond layers and the FeAs layers therein. Our findings provide a comprehensive picture of the orbital characters of the low-lying band structure of 112-type iron-based superconductors, which can be a starting point for the further understanding of their unconventional superconductivity.
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Submitted 20 November, 2014;
originally announced November 2014.
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Drastic electronic structure reconstruction of Ca$_{1-x}$Pr$_x$Fe$_2$As$_2$ in the collapsed tetragonal phase
Authors:
D. F. Xu,
D. W. Shen,
J. Jiang,
Z. R. Ye,
X. Liu,
X. H. Niu,
H. C. Xu,
Y. J. Yan,
T. Zhang,
B. P. Xie,
D. L. Feng
Abstract:
We report the electronic structure reconstruction of Ca$_{1-x}$Pr$_x$Fe$_2$As$_2$ ($x$ = 0.1 and 0.15) in the low temperature collapsed tetragonal (CT) phase observed by angle-resolved photoemission spectroscopy. Different from Ca(Fe$_{1-x}$Rh$_x$)$_2$As$_2$ and the annealed CaFe$_2$As$_2$ where all hole Fermi surfaces are absent in their CT phases, the cylindrical hole Fermi surface can still be…
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We report the electronic structure reconstruction of Ca$_{1-x}$Pr$_x$Fe$_2$As$_2$ ($x$ = 0.1 and 0.15) in the low temperature collapsed tetragonal (CT) phase observed by angle-resolved photoemission spectroscopy. Different from Ca(Fe$_{1-x}$Rh$_x$)$_2$As$_2$ and the annealed CaFe$_2$As$_2$ where all hole Fermi surfaces are absent in their CT phases, the cylindrical hole Fermi surface can still be observed in the CT phase of Ca$_{1-x}$Pr$_x$Fe$_2$As$_2$. Furthermore, we found at least three well separated electron-like bands around the zone corner in the CT phase of Ca$_{1-x}$Pr$_x$Fe$_2$As$_2$, which are more dispersive than the electron-like bands in the high temperature tetragonal phase. Based on these observations, we propose that the weakening of correlations (as indicated by the reduced effective mass), rather than the lack of Fermi surface nesting, might be responsible for the absence of magnetic ordering and superconductivity in the CT phase.
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Submitted 24 October, 2014; v1 submitted 22 October, 2014;
originally announced October 2014.
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Extraordinary quasiparticle scattering and bandwidth-control by dopants in iron-based superconductors
Authors:
Z. R. Ye,
Y. Zhang,
F. Chen,
M. Xu,
J. Jiang,
X. H. Niu,
C. H. P. Wen,
L. Y. Xing,
X. C. Wang,
C. Q. Jin,
B. P. Xie,
D. L. Feng
Abstract:
The diversities in crystal structures and ways of doping result in extremely diversified phase diagrams for iron-based superconductors. With angle-resolved photoemission spectroscopy (ARPES), we have systematically studied the effects of chemical substitution on the electronic structure of various series of iron-based superconductors. In addition to the control of Fermi surface topology by heterov…
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The diversities in crystal structures and ways of doping result in extremely diversified phase diagrams for iron-based superconductors. With angle-resolved photoemission spectroscopy (ARPES), we have systematically studied the effects of chemical substitution on the electronic structure of various series of iron-based superconductors. In addition to the control of Fermi surface topology by heterovalent doping, we found two more extraordinary effects of doping: 1. the site and band dependencies of quasiparticle scattering; and more importantly 2. the ubiquitous and significant bandwidth-control by both isovalent and heterovalent dopants in the iron-anion layer. Moreover, we found that the bandwidth-control could be achieved by either applying the chemical pressure or doping electrons, but not by doping holes. Together with other findings provided here, these results complete the microscopic picture of the electronic effects of dopants, which facilitates a unified understanding of the diversified phase diagrams and resolutions to many open issues of various iron-based superconductors.
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Submitted 27 April, 2014;
originally announced April 2014.
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Angle-resolved Photoemission Spectroscopy Study on the Surface States of the Correlated Topological Insulator YbB6
Authors:
M. Xia,
J. Jiang,
Z. R. Ye,
Y. H. Wang,
Y. Zhang,
S. D. Chen,
X. H. Niu,
D. F. Xu,
F. Chen,
X. H. Chen,
B. P. Xie,
T. Zhang,
D. L. Feng
Abstract:
We report the electronic structure of YbB6, a recently predicted moderately correlated topological insulator, measured by angle-resolved photoemission spectroscopy. We directly observed linearly dispersive bands around the time-reversal invariant momenta Γ and X with negligible kz dependence, consistent with odd number of surface states crossing the Fermi level in a Z2 topological insulator. Circu…
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We report the electronic structure of YbB6, a recently predicted moderately correlated topological insulator, measured by angle-resolved photoemission spectroscopy. We directly observed linearly dispersive bands around the time-reversal invariant momenta Γ and X with negligible kz dependence, consistent with odd number of surface states crossing the Fermi level in a Z2 topological insulator. Circular dichroism photoemission spectra suggest that these in-gap states possess chirality of orbital angular momentum, which is related to the chiral spin texture, further indicative of their topological nature. The observed insulating gap of YbB6 is about 100 meV, larger than that reported by theoretical calculations. Our results present strong evidence that YbB6 is a correlated topological insulator and provide a foundation for further studies of this promising material.
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Submitted 24 April, 2014;
originally announced April 2014.
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Critical role of substrate in the high temperature superconductivity of single layer FeSe on Nb:BaTiO$_3$
Authors:
R. Peng,
H. C. Xu,
S. Y. Tan,
M. Xia,
X. P. Shen,
Z. C. Huang,
C. H. P. Wen,
Q. Song,
T. Zhang,
B. P. Xie,
D. L. Feng
Abstract:
In the quest for high temperature superconductors, the interface between a metal and a dielectric was proposed to possibly achieve very high superconducting transition temperature ($T_c$) through interface-assisted pairing. Recently, in single layer FeSe (SLF) films grown on SrTiO$_3$ substrates, signs for $T_c$ up to 65~K have been reported. However, besides doping electrons and imposing strain,…
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In the quest for high temperature superconductors, the interface between a metal and a dielectric was proposed to possibly achieve very high superconducting transition temperature ($T_c$) through interface-assisted pairing. Recently, in single layer FeSe (SLF) films grown on SrTiO$_3$ substrates, signs for $T_c$ up to 65~K have been reported. However, besides doping electrons and imposing strain, whether and how the substrate facilitates the superconductivity are still unclear. Here we report the growth of various SLF films on thick BaTiO$_3$ films atop KTaO$_3$ substrates, with signs for $T_c$ up to $75$~K, close to the liquid nitrogen boiling temperature. SLF of similar doping and lattice is found to exhibit high $T_c$ only if it is on the substrate, and its band structure strongly depends on the substrate. Our results highlight the profound role of substrate on the high-$T_c$ in SLF, and provide new clues for understanding its mechanism.
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Submitted 6 February, 2014;
originally announced February 2014.
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Electronic structure of the BaTi$_2$As$_2$O parent compound of the titanium based oxypnictide superconductor
Authors:
H. C. Xu,
M. Xu,
R. Peng,
Y. Zhang,
Q. Q. Ge,
F. Qin,
M. Xia,
J. J. Ying,
X. H. Chen,
M. Arita,
K. Shimada,
M. Taniguchi,
D. H. Lu,
B. P. Xie,
D. L. Feng
Abstract:
The electronic structure of BaTi2As2O, a parent compound of the newly discovered titanium-based oxypnictide superconductors, is studied by angle-resolved photoemission spectroscopy. The electronic structure shows multi-orbital nature and possible three-dimensional character. An anomalous temperature-dependent spectral weight redistribution and broad lineshape indicate the incoherent nature of the…
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The electronic structure of BaTi2As2O, a parent compound of the newly discovered titanium-based oxypnictide superconductors, is studied by angle-resolved photoemission spectroscopy. The electronic structure shows multi-orbital nature and possible three-dimensional character. An anomalous temperature-dependent spectral weight redistribution and broad lineshape indicate the incoherent nature of the spectral function. At the density-wave-like transition temperature around 200 K, a partial gap opens at the Fermi patches. These findings suggest that BaTi2As2O is likely a charge density wave material in the strong interaction regime.
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Submitted 29 January, 2014;
originally announced January 2014.