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Dynamic Versus Static Oxidation of Nb/Al-AlOx/Nb Trilayer
Authors:
Tannaz Farrahi,
Alan W. Kleinsasser,
Michael Cyberey,
Jie Wang,
Micahel B. Eller,
Jian Z. Zhang,
Anthony R. Kerr,
Joseph G. Lambert,
Robert M. Weikle,
Arthur W. Lichtenberger
Abstract:
High quality Nb-based superconductor-insulator-superconductor (SIS) junctions with Al oxide (AlO$_x$) tunnel barriers grown from Al overlayers are widely reported in the literature. However, the thin barriers required for high critical current density (J$_c$) junctions exhibit defects that result in significant subgap leakage current that is detrimental for many applications. High quality, high-J…
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High quality Nb-based superconductor-insulator-superconductor (SIS) junctions with Al oxide (AlO$_x$) tunnel barriers grown from Al overlayers are widely reported in the literature. However, the thin barriers required for high critical current density (J$_c$) junctions exhibit defects that result in significant subgap leakage current that is detrimental for many applications. High quality, high-J$_c$ junctions can be realized with AlN$_x$ barriers, but control of J$_c$ is more difficult than with AlO$_x$. It is therefore of interest to study the growth of thin AlO$_x$ barriers with the ultimate goal of achieving high quality, high-J$_c$ AlO$_x$ junctions. In this work, 100\%\ O$_2$ and 2\%\ O$_2$ in Ar gas mixtures are used both statically and dynamically to grow AlO$_x$ tunnel barriers over a large range of oxygen exposures. In situ ellipsometry is used for the first time to extensively measure AlO$_x$ tunnel barrier growth in real time, revealing a number of unexpected patterns. Finally, a set of test junction wafers was fabricated that exhibited the well-known dependence of J$_c$ on oxygen exposure (E) in order to further validate the experimental setup.
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Submitted 8 September, 2024; v1 submitted 22 June, 2023;
originally announced June 2023.
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Second-order Structural Transition in Superconductor La$_3$Co$_4$Sn$_{13}$
Authors:
Y. W. Cheung,
J. Z. Zhang,
J. Y. Zhu,
W. C. Yu,
Y. J. Hu,
D. G. Wang,
Yuka Otomo,
Kazuaki Iwasa,
Koji Kaneko,
Masaki Imai,
Hibiki Kanagawa,
Kazuyoshi Yoshimura,
Swee K. Goh
Abstract:
The quasi-skutterudite superconductor La$_3$Co$_4$Sn$_{13}$ undergoes a phase transition at $T^*=152$ K. By measuring the temperature dependence of heat capacity, electrical resistivity, and the superlattice reflection intensity using X-ray, we explore the character of the phase transition at $T^*$. Our lattice dynamic calculations found imaginary phonon frequencies around the ${\bf M}$ point, whe…
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The quasi-skutterudite superconductor La$_3$Co$_4$Sn$_{13}$ undergoes a phase transition at $T^*=152$ K. By measuring the temperature dependence of heat capacity, electrical resistivity, and the superlattice reflection intensity using X-ray, we explore the character of the phase transition at $T^*$. Our lattice dynamic calculations found imaginary phonon frequencies around the ${\bf M}$ point, when the high temperature structure is used in the calculations, indicating that the structure is unstable at the zero temperature limit. The combined experimental and computational results establish that $T^*$ is associated with a second-order structural transition with $\bf{q}$=(0.5, 0.5, 0) (or the ${\bf M}$ point). Further electronic bandstructure calculations reveal Fermi surface sheets with low curvature segments, which allow us to draw qualitative comparison with both Sr$_3$Ir$_4$Sn$_{13}$ and Sr$_3$Rh$_4$Sn$_{13}$ in which similar physics has been discussed recently.
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Submitted 8 June, 2016;
originally announced June 2016.
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Unidirectional Diagonal Order and 3D Stacking of Charge Stripes in Orthorhombic Pr1.67Sr0.33NiO4 and Nd1.67Sr0.33NiO4
Authors:
M. Huecker,
M. v. Zimmermann,
R. Klingeler,
S. Kiele,
J. Geck,
S. N. Bakehe,
J. Z. Zhang,
J. P. Hill,
A. Revcolevschi,
D. J. Buttrey,
B. Buechner,
J. M. Tranquada
Abstract:
The interplay between crystal symmetry and charge stripe order in Pr1.67Sr0.33NiO4 and Nd1.67Sr0.33NiO4 has been studied by means of single crystal x-ray diffraction. In contrast to tetragonal La1.67Sr0.33NiO4, these crystals are orthorhombic. The corresponding distortion of the NiO2 planes is found to dictate the direction of the charge stripes, similar to the case of diagonal spin stripes in t…
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The interplay between crystal symmetry and charge stripe order in Pr1.67Sr0.33NiO4 and Nd1.67Sr0.33NiO4 has been studied by means of single crystal x-ray diffraction. In contrast to tetragonal La1.67Sr0.33NiO4, these crystals are orthorhombic. The corresponding distortion of the NiO2 planes is found to dictate the direction of the charge stripes, similar to the case of diagonal spin stripes in the insulating phase of La2-xSrxCuO4. In particular, diagonal stripes seem to always run along the short a-axis, which is the direction of the octahedral tilt axis. In contrast, no influence of the crystal symmetry on the charge stripe ordering temperature itself was observed, with T_CO 240K for La, Pr, and Nd. The coupling between lattice and stripe degrees of freedom allows one to produce macroscopic samples with unidirectional stripe order. In samples with stoichiometric oxygen content and a hole concentration of exactly 1/3, charge stripes exhibit a staggered stacking order with a period of three NiO2 layers, previously only observed with electron microscopy in domains of mesoscopic dimensions. Remarkably, this stacking order starts to melt about 40K below T_CO. The melting process can be described by mixing the ground state, which has a 3-layer stacking period, with an increasing volume fraction with a 2-layer stacking period.
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Submitted 24 April, 2006;
originally announced April 2006.
