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Single-crystal epitaxial europium iron garnet films with strain-induced perpendicular magnetic anisotropy: structural, strain, magnetic, and spin transport properties
Authors:
M. X. Guo,
C. K. Cheng,
Y. C. Liu,
C. N. Wu,
W. N. Chen,
T. Y Chen,
C. T. Wu,
C. H. Hsu,
S. Q. Zhou,
C. F. Chang,
L. H. Tjeng,
S. F. Lee,
C. F. Pai,
M. Hong,
J. Kwo
Abstract:
Single-crystal europium iron garnet (EuIG) thin films epitaxially strain-grown on gadolinium gallium garnet (GGG)(100) substrates using off-axis sputtering have strain-induced perpendicular magnetic anisotropy (PMA). By varying the sputtering conditions, we have tuned the europium/iron (Eu/Fe) composition ratios in the films to tailor the film strains. The films exhibited an extremely smooth, part…
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Single-crystal europium iron garnet (EuIG) thin films epitaxially strain-grown on gadolinium gallium garnet (GGG)(100) substrates using off-axis sputtering have strain-induced perpendicular magnetic anisotropy (PMA). By varying the sputtering conditions, we have tuned the europium/iron (Eu/Fe) composition ratios in the films to tailor the film strains. The films exhibited an extremely smooth, particle-free surface with roughness as low as 0.1 nm as observed using atomic force microscopy. High-resolution x-ray diffraction analysis and reciprocal space maps showed in-plane epitaxial film growth, very smooth film/substrate interface, excellent film crystallinity with a small full width at half maximum of 0.012$^{\circ}$ in the rocking curve scans, and an in-plane compressive strain without relaxation. In addition, spherical aberration-corrected scanning transmission electron microscopy showed an atomically abrupt interface between the EuIG film and GGG. The measured squarish out-of-plane magnetization-field hysteresis loops by vibrating sample magnetometry in conjunction with the measurements from angle-dependent x-ray magnetic dichroism demonstrated the PMA in the films. We have tailored the magnetic properties of the EuIG thin films, including saturation magnetization ranging from 71.91 to 124.51 emu/c.c. (increase with the (Eu/Fe) ratios), coercive field from 27 to 157.64 Oe, and the strength of PMA field ($H_\bot$) increasing from 4.21 to 18.87 kOe with the in-plane compressive strain from -0.774 to -1.044%. We have also investigated spin transport in Pt/EuIG bi-layer structure and evaluated the real part of spin mixing conductance to be $3.48\times10^{14} Ω^{-1}m^{-2}$. We demonstrated the current-induced magnetization switching with a low critical switching current density of $3.5\times10^6 A/cm^2$, showing excellent potential for low-dissipation spintronic devices.
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Submitted 11 January, 2022;
originally announced January 2022.
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Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4
Authors:
Y. M. Xie,
Z. R. Yang,
L. Li,
L. H. Yin,
X. B. Hu,
Y. L. Huang,
H. B. Jian,
W. H. Song,
Y. P. Sun,
S. Q. Zhou,
Y. H. Zhang
Abstract:
The correlation between colossal magnetocapacitance (CMC) and colossal magnetoresistance (CMR) in CdCr2S4 system has been revealed. The CMC is induced in polycrystalline Cd0.97In0.03Cr2S4 by annealing in cadmium vapor. At the same time, an insulator-metal transition and a concomitant CMR are observed near the Curie temperature. In contrast, after the same annealing treatment, CdCr2S4 displays a ty…
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The correlation between colossal magnetocapacitance (CMC) and colossal magnetoresistance (CMR) in CdCr2S4 system has been revealed. The CMC is induced in polycrystalline Cd0.97In0.03Cr2S4 by annealing in cadmium vapor. At the same time, an insulator-metal transition and a concomitant CMR are observed near the Curie temperature. In contrast, after the same annealing treatment, CdCr2S4 displays a typical semiconductor behavior and does not show magnetic field dependent dielectric and electric transport properties. The simultaneous occurrence or absence of CMC and CMR effects implies that the CMC in the annealed Cd0.97In0.03Cr2S4 could be explained qualitatively by a combination of CMR and Maxwell-Wagner effect.
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Submitted 29 December, 2012;
originally announced December 2012.
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Validity of the scattering length approximation in strongly interacting Fermi systems
Authors:
S. Q. Zhou,
D. M. Ceperley,
Shiwei Zhang
Abstract:
We investigate the energy spectrum of systems of two, three and four spin-1/2 fermions with short range attractive interactions both exactly, and within the scattering length approximation. The formation of molecular bound states and the ferromagnetic transition of the excited scattering state are examined systematically as a function of the 2-body scattering length. Identification of the upper br…
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We investigate the energy spectrum of systems of two, three and four spin-1/2 fermions with short range attractive interactions both exactly, and within the scattering length approximation. The formation of molecular bound states and the ferromagnetic transition of the excited scattering state are examined systematically as a function of the 2-body scattering length. Identification of the upper branch (scattering states) is discussed and a general approach valid for systems with many particles is given. We show that an adiabatic ferromagnetic transition occurs, but at a critical transition point kF a much higher than predicted from previous calculations, almost all of which use the scattering length approximation. In the 4-particle system the discrepancy is a factor of 2. The exact critical interaction strength calculated in the 4-particle system is consistent with that reported by experiment. To make comparisons with the adiabatic transition, we study the quench dynamics of the pairing instability using the eigenstate wavefunctions.
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Submitted 7 September, 2011; v1 submitted 17 March, 2011;
originally announced March 2011.
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Construction of localized wave functions for a disordered optical lattice and analysis of the resulting Hubbard model parameters
Authors:
S. Q. Zhou,
D. M. Ceperley
Abstract:
We propose a method to construct localized single particle wave functions using imaginary time projection and thereby determine lattice Hamiltonian parameters. We apply the method to a specific disordered potential generated by an optical lattice experiment and calculate for each instance of disorder, the equivalent lattice model parameters. The probability distributions of the Hubbard parameter…
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We propose a method to construct localized single particle wave functions using imaginary time projection and thereby determine lattice Hamiltonian parameters. We apply the method to a specific disordered potential generated by an optical lattice experiment and calculate for each instance of disorder, the equivalent lattice model parameters. The probability distributions of the Hubbard parameters are then determined. Tests of localization and eigen-energy convergence are examined.
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Submitted 31 July, 2009; v1 submitted 29 July, 2009;
originally announced July 2009.
