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Disorder-broadened phase boundary with enhanced amorphous superconductivity in pressurized In2Te5
Authors:
Yi Zhao,
Tianping Ying,
Lingxiao Zhao,
Juefei Wu,
Cuiying Pei,
Jing Chen,
Jun Deng,
Qinghua Zhang,
Lin Gu,
Qi Wang,
Weizheng Cao,
Changhua Li,
Shihao Zhu,
Mingxin Zhang,
Na Yu,
Lili Zhang,
Yulin Chen,
Chui-Zhen Chen,
Tongxu Yu,
Yanpeng Qi
Abstract:
As an empirical tool in materials science and engineering, the iconic phase diagram owes its robustness and practicality to the topological characteristics rooted in the celebrated Gibbs phase law (F = C - P + 2). When crossing the phase diagram boundary, the structure transition occurs abruptly, bringing about an instantaneous change in physical properties and limited controllability on the bound…
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As an empirical tool in materials science and engineering, the iconic phase diagram owes its robustness and practicality to the topological characteristics rooted in the celebrated Gibbs phase law (F = C - P + 2). When crossing the phase diagram boundary, the structure transition occurs abruptly, bringing about an instantaneous change in physical properties and limited controllability on the boundaries (F = 1). Here, we expand the sharp phase boundary to an amorphous transition region (F = 2) by partially disrupting the long-range translational symmetry, leading to a sequential crystalline-amorphous-crystalline (CAC) transition in a pressurized In2Te5 single crystal. Through detailed in-situ synchrotron diffraction, we elucidate that the phase transition stems from the rotation of immobile blocks [In2Te2]2+, linked by hinge-like [Te3]2- trimers. Remarkably, within the amorphous region, the amorphous phase demonstrates a notable 25 % increase of the superconducting transition temperature (Tc), while the carrier concentration remains relatively constant. Furthermore, we propose a theoretical framework revealing that the unconventional boost in amorphous superconductivity might be attributed to an intensified electron correlation, triggered by a disorder-augmented multifractal behavior. These findings underscore the potential of disorder and prompt further exploration of unforeseen phenomena on the phase boundaries.
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Submitted 10 May, 2024;
originally announced May 2024.
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Creating cyclo-N$_5$$^{+}$ cation and assembling N$_5$$^{+}$N$_5$$^{-}$ salt via electronegativity co-matching in tailored ionic compounds
Authors:
Bi Zhang,
Yu Xin,
Meiling Xu,
Yiming Zhang,
Yinwei Li,
Yanchao Wang,
Changfeng Chen
Abstract:
The recent discovery of crystalline pentazolates marks a major advance in polynitrogen science and raises prospects of making the long-touted potent propellant N$_5$$^{+}$N$_5$$^{-}$ salt. However, despite the synthesis of cyclo-N$_5$$^{-}$ anion in pentazolates, counter cation cyclo-N$_5$$^{+}$ remains elusive due to the strong oxidizing power of pentazole ion; moreover, pure N$_5$$^{+}$N$_5$…
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The recent discovery of crystalline pentazolates marks a major advance in polynitrogen science and raises prospects of making the long-touted potent propellant N$_5$$^{+}$N$_5$$^{-}$ salt. However, despite the synthesis of cyclo-N$_5$$^{-}$ anion in pentazolates, counter cation cyclo-N$_5$$^{+}$ remains elusive due to the strong oxidizing power of pentazole ion; moreover, pure N$_5$$^{+}$N$_5$$^{-}$ salt is known to be unstable. Here, we devise a new strategy for making rare cyclo-N$_5$$^{+}$ cation and assembling the long-sought N$_5$$^{+}$N$_5$$^{-}$ salt in tailored ionic compounds, wherein the negative/positive host ions act as oxidizing/reducing agents to form cyclo-N$_5$$^{+}$/N$_5$$^{-}$ species. This strategy is implemented via an advanced computational crystal structure search, which identifies XN$_5$N$_5$F (X = Li, Na, K) compounds that stabilize at high pressures and remain viable at ambient pressure-temperature conditions based on \textit{ab initio} molecular dynamics simulations. This finding opens an avenue for creating and stabilizing N$_5$$^{+}$N$_5$$^{-}$ salt assembly in ionic compounds, where cyclo-N$_5$ species are oxidized/reduced via co-matching with host ions of high/low electronegativity. The present results demonstrate novel polynitrogen chemistry, and these findings offer new insights and prospects in the design and synthesis of diverse chemical species that exhibit unusual charge states, bonding structures, and superior functionality.
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Submitted 10 May, 2024;
originally announced May 2024.
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Blood Works for Graphene Production
Authors:
Xiaofan Cai,
Ming Li,
Chao Chen,
Renjun Du,
Zijing Guo,
Ping Wang,
Guodong Ma,
Xinglong Wu,
Zhiyuan Wang,
Yaqing Han,
Fuzhuo Lian,
Jingkuan Xiao,
Siqi Jiang,
Lei Wang,
Alexander S. Mayorov,
Libo Gao,
Kostya S. Novoselov,
Geliang Yu
Abstract:
Blood, a ubiquitous and fundamental carbohydrate material composed of plasma, red blood cells, white blood cells, and platelets, has been playing an important role in biology, life science, history, and religious study, while graphene has garnered significant attention due to its exceptional properties and extensive range of potential applications. Achieving environmentally friendly, cost-effectiv…
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Blood, a ubiquitous and fundamental carbohydrate material composed of plasma, red blood cells, white blood cells, and platelets, has been playing an important role in biology, life science, history, and religious study, while graphene has garnered significant attention due to its exceptional properties and extensive range of potential applications. Achieving environmentally friendly, cost-effective growth using hybrid precursors and obtaining high-quality graphene through a straightforward CVD process has been traditionally considered mutually exclusive. This study demonstrates that we can produce high-quality graphene domains with controlled thickness through a one-step growth process at atmospheric pressure using blood as a precursor. Raman spectroscopy confirms the uniformity of the blood-grown graphene films, and observing the half-integer quantum Hall effect in the measured devices highlights its outstanding electronic properties. This unprecedented approach opens possibilities for blood application, facilitating an unconventional route in graphene growth applications.
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Submitted 27 April, 2024;
originally announced April 2024.
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Designing open quantum systems with known steady states: Davies generators and beyond
Authors:
Jinkang Guo,
Oliver Hart,
Chi-Fang Chen,
Aaron J. Friedman,
Andrew Lucas
Abstract:
We provide a systematic framework for constructing generic models of nonequilibrium quantum dynamics with a target stationary (mixed) state. Our framework identifies (almost) all combinations of Hamiltonian and dissipative dynamics that relax to a steady state of interest, generalizing the Davies' generator for dissipative relaxation at finite temperature to nonequilibrium dynamics targeting arbit…
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We provide a systematic framework for constructing generic models of nonequilibrium quantum dynamics with a target stationary (mixed) state. Our framework identifies (almost) all combinations of Hamiltonian and dissipative dynamics that relax to a steady state of interest, generalizing the Davies' generator for dissipative relaxation at finite temperature to nonequilibrium dynamics targeting arbitrary stationary states. We focus on Gibbs states of stabilizer Hamiltonians, identifying local Lindbladians compatible therewith by constraining the rates of dissipative and unitary processes. Moreover, given terms in the Lindbladian not compatible with the target state, our formalism identifies the operations -- including syndrome measurements and local feedback -- one must apply to correct these errors. Our methods also reveal new models of quantum dynamics: for example, we provide a "measurement-induced phase transition" where measurable two-point functions exhibit critical (power-law) scaling with distance at a critical ratio of the transverse field and rate of measurement and feedback. Time-reversal symmetry -- defined naturally within our formalism -- can be broken both in effectively classical, and intrinsically quantum, ways. Our framework provides a systematic starting point for exploring the landscape of quantum dynamical universality classes, as well as identifying new protocols for quantum error correction.
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Submitted 22 April, 2024;
originally announced April 2024.
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Interplay between electronic dephasing and localization in finite-sized Chern insulator
Authors:
Yunhe Bai,
Yuanzhao Li,
Jianli Luan,
Yang Chen,
Zongwei Gao,
Wenyu Song,
Yitian Tong,
Jinsong Zhang,
Yayu Wang,
Junjie Qi,
Chui-Zhen Chen,
Hua Jiang,
X. C. Xie,
Ke He,
Yang Feng,
Xiao Feng,
Qi-Kun Xue
Abstract:
Anderson localization is anticipated to play a pivotal role in the manifestation of the quantum anomalous Hall effect, akin to its role in conventional quantum Hall effects. The significance of Anderson localization is particularly pronounced in elucidating the reasons behind the fragility of the observed quantum anomalous Hall state in the intrinsic magnetic topological insulator MnBi2Te4 with a…
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Anderson localization is anticipated to play a pivotal role in the manifestation of the quantum anomalous Hall effect, akin to its role in conventional quantum Hall effects. The significance of Anderson localization is particularly pronounced in elucidating the reasons behind the fragility of the observed quantum anomalous Hall state in the intrinsic magnetic topological insulator MnBi2Te4 with a large predicted magnetic gap. Here, employing varying sized MnBi2Te4 micro/nano-structures fabricated from a single molecular-beam-epitaxy-grown thin film, we have carried out a systematic size- and temperature-dependent study on the transport properties of the films regarding the quantum anomalous Hall states. The low-temperature transport properties of the finite-sized MnBi2Te4 samples can be quantitatively understood through Anderson localization, which plays an indispensable role in stabilizing the ground states. At higher temperatures, the failure of electron localization induced by an excessively short electronic dephasing length is identified as the cause of deviation from quantization. The work reveals that electronic dephasing and localization are non-negligible factors in designing high-temperature quantum anomalous Hall systems.
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Submitted 13 April, 2024;
originally announced April 2024.
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Observation of Kosterlitz-Thouless Metal-to-Insulator Transition in Quantum Anomalous Hall Insulators
Authors:
Ruoxi Zhang,
Yi-Fan Zhao,
Ling-Jie Zhou,
Deyi Zhuo,
Zi-Jie Yan,
Chao-Xing Liu,
Moses H. W. Chan,
Chui-Zhen Chen,
Cui-Zu Chang
Abstract:
Interlayer exchange coupling (IEC) between two magnetic layers sandwiched by a nonmagnetic spacer layer plays a critical role in shaping the magnetic properties of such heterostructures. The quantum anomalous Hall (QAH) effect has been realized in a structure composed of two magnetically doped topological insulator (TI) layers separated by an undoped TI layer. The quantized Hall conductance observ…
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Interlayer exchange coupling (IEC) between two magnetic layers sandwiched by a nonmagnetic spacer layer plays a critical role in shaping the magnetic properties of such heterostructures. The quantum anomalous Hall (QAH) effect has been realized in a structure composed of two magnetically doped topological insulator (TI) layers separated by an undoped TI layer. The quantized Hall conductance observed in this sandwich heterostructure originates from the combined contribution of the top and bottom surface states. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI sandwiches with varying thicknesses of the middle undoped TI layer. The well-quantized QAH effect is observed in all these samples and its critical behavior is modulated by the IEC between the top and bottom magnetic TI layers. Near the plateau phase transition (PPT), we find that thinner QAH samples exhibit a two-dimensional critical metal behavior with nearly temperature-independent longitudinal resistance, whereas thicker QAH samples behave as a three-dimensional insulator with reduced longitudinal resistance at higher temperatures. The IEC-induced critical-metal-to-insulator transition in the QAH PPT regime can be understood through a two-channel Chalker-Coddington network model by tuning inter-channel tunneling. The agreement between experiment and theory strongly supports the QAH PPT within the Kosterlitz-Thouless framework, where the critical metal and disordered insulator phases exist in bound and unbound states of vortex-antivortex pairs, respectively.
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Submitted 2 April, 2024;
originally announced April 2024.
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Scaling Crystal Structure Relaxation with a Universal Trustworthy Deep Generative Model
Authors:
Ziduo Yang,
Yiming Zhao,
Xiaoqing Liu,
Xiuying Zhang,
Yifan Li,
Qiujie Lyu,
Calvin Yu-Chian Chen,
Lei Shen
Abstract:
The evolution of AI and high-throughput technologies has boosted a rapid increase in the number of new materials, challenging our computational ability to comprehensively analyze their properties. Relaxed crystal structures often serve as the foundational basis for further property calculations. However, determining equilibrium structures traditionally involves computationally expensive iterative…
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The evolution of AI and high-throughput technologies has boosted a rapid increase in the number of new materials, challenging our computational ability to comprehensively analyze their properties. Relaxed crystal structures often serve as the foundational basis for further property calculations. However, determining equilibrium structures traditionally involves computationally expensive iterative calculations. Here, we develop DeepRelax, an efficient deep generative model designed for rapid structural relaxation without any iterative process. DeepRelax learns the equilibrium structural distribution, enabling it to predict relaxed structures directly from their unrelaxed counterparts. The ability to perform structural relaxation in just a few hundred milliseconds per structure, combined with the scalability of parallel processing, makes DeepRelax particularly useful for large-scale virtual screening. To demonstrate the universality of DeepRelax, we benchmark it against three different databases of X-Mn-O oxides, Materials Project, and Computational 2D Materials Database with various types of materials. In these tests, DeepRelax exhibits both high accuracy and efficiency in structural relaxation, as further validated by DFT calculations. Finally, we integrate DeepRelax with an implementation of uncertainty quantification, enhancing its reliability and trustworthiness in material discovery. This work provides an efficient and trustworthy method to significantly accelerate large-scale computations, offering substantial advancements in the field of computational materials science.
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Submitted 31 March, 2024;
originally announced April 2024.
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Revealing the Microscopic Mechanism of Elementary Vortex Pinning in Superconductors
Authors:
C. Chen,
Y. Liu,
Y. Chen,
Y. N. Hu,
T. Z. Zhang,
D. Li,
X. Wang,
C. X. Wang,
Z. Y. W. Lu,
Y. H. Zhang,
Q. L. Zhang,
X. L. Dong,
R. Wang,
D. L. Feng,
T. Zhang
Abstract:
Vortex pinning is a crucial factor that determines the critical current of practical superconductors. However, the understanding of its underlying mechanism has long been phenomenological without a clear microscopic description. Here using high-resolution scanning tunneling microscopy, we studied single vortex pinning induced by point defect in layered FeSe-based superconductors. We found the defe…
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Vortex pinning is a crucial factor that determines the critical current of practical superconductors. However, the understanding of its underlying mechanism has long been phenomenological without a clear microscopic description. Here using high-resolution scanning tunneling microscopy, we studied single vortex pinning induced by point defect in layered FeSe-based superconductors. We found the defect-vortex interaction drives low-energy vortex bound states away from EF, resulting a mini gap which effectively lowered the energy of vortex and caused the pinning. By measuring the local density-of-states, we directly obtained the elementary pinning energy and estimated the pinning force through the spatial gradient of pinning energy. The results align with the bulk critical current measurement. We further show that a general microscopic quantum model with considering defect-vortex interaction can well capture our observation. It indicates the local pairing near pinned vortex core is actually enhanced, which is beyond the traditional understanding that non-superconducting regions pin vortices. Our study thus revealed a general microscopic mechanism of vortex pinning in superconductors.
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Submitted 26 March, 2024;
originally announced March 2024.
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Observation of non-volatile anomalous Nernst effect in altermagnet with collinear Néel vector
Authors:
Lei Han,
Xizhi Fu,
Wenqing He,
Yuxiang Zhu,
Jiankun Dai,
Wenfeng Yang,
Wenxuan Zhu,
Hua Bai,
Chong Chen,
Caihua Wan,
Xiufeng Han,
Cheng Song,
Junwei Liu,
Feng Pan
Abstract:
Anomalous Nernst effect (ANE), a widely investigated transverse thermoelectric effect that converts waste heat into electrical energy with remarkable flexibility and integration capability, has been extended to antiferromagnets with non-collinear spin texture recently. ANE in compensated magnet with collinear Néel vector will bring more opportunities to construct magnetic-field-immune and ultrafas…
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Anomalous Nernst effect (ANE), a widely investigated transverse thermoelectric effect that converts waste heat into electrical energy with remarkable flexibility and integration capability, has been extended to antiferromagnets with non-collinear spin texture recently. ANE in compensated magnet with collinear Néel vector will bring more opportunities to construct magnetic-field-immune and ultrafast transverse thermoelectric converters, but remains unachieved for long. It is due to the degenerated band structure of traditional collinear compensated magnet excludes non-zero Berry curvature. Here, we realize non-volatile ANE in altermagnet Mn5Si3 thin film with collinear Neel vector, whose unique alternating spin-splitting band structure plays vital role in creating non-zero Berry curvature and hotpots of anomalous Nernst conductivity near band intersections. Interestingly, ANE is relatively weak in stoichiometric Mn5Si3, but undergoes a sixfold enhancement through strategically raising the Fermi level by additional Mn doping, indicating sensitive intrinsic influence from specific location of the Fermi level on ANE in altermagnet. Moreover, our investigation reveals a unique Neel-vector-dependent temperature-scaling relationship of anomalous Nernst conductivity in Mn5Si3. Our work not only fills a longstanding gap by confirming the presence of non-volatile ANE in collinear compensated magnet, but also enlightens thermoelectric physics related to exotic spin-splitting band structure in altermagnet.
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Submitted 20 March, 2024;
originally announced March 2024.
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Terahertz Metamaterial Renormalization of Superconducting Josephson Plasmons in La$_{1.85}$Sr$_{0.15}$CuO$_4$
Authors:
Kelson Kaj,
Ian Hammock,
Chunxu Chen,
Xiaoguang Zhao,
Kevin A. Cremin,
Jacob Schalch,
Yuwei Huang,
Michael Fogler,
Dmitri N. Basov,
Xin Zhang,
Richard D. Averitt
Abstract:
We investigate light-matter coupling in the cuprate superconductor La$_{1.85}$Sr$_{0.15}$Cu0$_4$ (LSCO), accomplished by adhering metamaterial resonator arrays (MRAs) to a c-axis oriented single crystal. The resonators couple to the Josephson Plasma Mode (JPM) which manifests as a plasma edge in the terahertz reflectivity in the superconducting state. Terahertz reflectivity measurements at 10K rev…
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We investigate light-matter coupling in the cuprate superconductor La$_{1.85}$Sr$_{0.15}$Cu0$_4$ (LSCO), accomplished by adhering metamaterial resonator arrays (MRAs) to a c-axis oriented single crystal. The resonators couple to the Josephson Plasma Mode (JPM) which manifests as a plasma edge in the terahertz reflectivity in the superconducting state. Terahertz reflectivity measurements at 10K reveal a renormalization of the JPM frequency, $ω_{jpm}$, from 1.7 THz for the bare crystal to $\sim$1 THz with the MRAs. With increasing temperature, the modified $ω_{jpm}$ redshifts as expected for decreasing superfluid density, vanishing above T$_{c}$. The modification of the electrodynamic response arises from resonator induced screening of the longitudinal polariton response, reminiscent of plasmon-phonon coupling in doped semiconductors. Modeling reveals that the electrodynamic response is fully interpretable using classical electromagnetism. Future studies will have to contend with the large effects we observe which could obscure subtle changes that may indicate cavity-based manipulation of superconductivity. Finally, we note that our MRA/LSCO structure is a tunable epsilon-near-zero (ENZ) metamaterial that exhibits a nonlinear response arising from the c-axis Josephson tunneling coupled with the local fields of the resonators.
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Submitted 18 March, 2024;
originally announced March 2024.
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First-Principles Calculation of Hubbard U for Terbium Metal under High Pressure
Authors:
Logan A. Burnett,
Matthew P. Clay,
Yogesh K. Vohra,
Cheng-Chien Chen
Abstract:
Using density functional theory (DFT) and linear response approaches, we compute the on-site Hubbard interaction $U$ of elemental Terbium (Tb) metal in the pressure range $\sim 0-65$ GPa. The resulting first-principles $U$ values with experimental crystal structures enable us to examine the magnetic properties of Tb using a self-consistent DFT+U method. The lowest-energy magnetic states in our cal…
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Using density functional theory (DFT) and linear response approaches, we compute the on-site Hubbard interaction $U$ of elemental Terbium (Tb) metal in the pressure range $\sim 0-65$ GPa. The resulting first-principles $U$ values with experimental crystal structures enable us to examine the magnetic properties of Tb using a self-consistent DFT+U method. The lowest-energy magnetic states in our calculations for different high-pressure Tb phases -- including hcp, $α$-Sm, and dhcp -- are found to be compatible with the corresponding magnetic ordering vectors reported in experiments. The result shows that the inclusion of Hubbard $U$ substantially improves the accuracy and efficiency in modeling correlated rare-earth materials. Our study also provides the necessary $U$ information for other quantum many-body techniques to study Tb under extreme pressure conditions.
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Submitted 18 March, 2024;
originally announced March 2024.
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Deep learning generative model for crystal structure prediction
Authors:
Xiaoshan Luo,
Zhenyu Wang,
Pengyue Gao,
Jian Lv,
Yanchao Wang,
Changfeng Chen,
Yanming Ma
Abstract:
Recent advances in deep learning generative models (GMs) have created unprecedented high capabilities in accessing and assessing complex high-dimensional data, allowing superior efficiency in navigating vast material configuration space in search of viable structures. Coupling such capabilities with physically significant data to construct trained models for materials discovery is crucial to movin…
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Recent advances in deep learning generative models (GMs) have created unprecedented high capabilities in accessing and assessing complex high-dimensional data, allowing superior efficiency in navigating vast material configuration space in search of viable structures. Coupling such capabilities with physically significant data to construct trained models for materials discovery is crucial to moving this emerging field forward. Here, we present a universal GM for crystal structure prediction (CSP) via a conditional crystal diffusion variational autoencoder (Cond-CDVAE) approach, which is tailored to allow user-defined material and physical parameters such as composition and pressure. This model is trained on an expansive dataset containing over 670,000 local minimum structures, including a rich spectrum of high-pressure structures, along with ambient-pressure structures in Materials Project database. We demonstrate that the Cond-CDVAE model can generate physically plausible structures with high fidelity under diverse pressure conditions without necessitating local optimization, accurately predicting 59.3% of the 3,547 unseen ambient-pressure experimental structures within 800 structure samplings, with the accuracy rate climbing to 83.2% for structures comprising fewer than 20 atoms per unit cell. These results meet or exceed those achieved via conventional CSP methods based on global optimization. The present findings showcase substantial potential of GMs in the realm of CSP.
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Submitted 16 March, 2024;
originally announced March 2024.
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Exploring Hilbert-Space Fragmentation on a Superconducting Processor
Authors:
Yong-Yi Wang,
Yun-Hao Shi,
Zheng-Hang Sun,
Chi-Tong Chen,
Zheng-An Wang,
Kui Zhao,
Hao-Tian Liu,
Wei-Guo Ma,
Ziting Wang,
Hao Li,
Jia-Chi Zhang,
Yu Liu,
Cheng-Lin Deng,
Tian-Ming Li,
Yang He,
Zheng-He Liu,
Zhen-Yu Peng,
Xiaohui Song,
Guangming Xue,
Haifeng Yu,
Kaixuan Huang,
Zhongcheng Xiang,
Dongning Zheng,
Kai Xu,
Heng Fan
Abstract:
Isolated interacting quantum systems generally thermalize, yet there are several counterexamples for the breakdown of ergodicity, such as many-body localization and quantum scars. Recently, ergodicity breaking has been observed in systems subjected to linear potentials, termed Stark many-body localization. This phenomenon is closely associated with Hilbert-space fragmentation, characterized by a s…
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Isolated interacting quantum systems generally thermalize, yet there are several counterexamples for the breakdown of ergodicity, such as many-body localization and quantum scars. Recently, ergodicity breaking has been observed in systems subjected to linear potentials, termed Stark many-body localization. This phenomenon is closely associated with Hilbert-space fragmentation, characterized by a strong dependence of dynamics on initial conditions. Here, we experimentally explore initial-state dependent dynamics using a ladder-type superconducting processor with up to 24 qubits, which enables precise control of the qubit frequency and initial state preparation. In systems with linear potentials, we observe distinct non-equilibrium dynamics for initial states with the same quantum numbers and energy, but with varying domain wall numbers. This distinction becomes increasingly pronounced as the system size grows, in contrast with disordered interacting systems. Our results provide convincing experimental evidence of the fragmentation in Stark systems, enriching our understanding of the weak breakdown of ergodicity.
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Submitted 14 March, 2024;
originally announced March 2024.
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Observation of in-gap states in a two-dimensional CrI2/NbSe2 heterostructure
Authors:
Peigen Li,
Jihai Zhang,
Di Zhu,
Cui-Qun Chen,
Enkui Yi,
Bing Shen,
Yusheng Hou,
Zhongbo Yan,
Dao-Xin Yao,
Donghui Guo,
Dingyong Zhong
Abstract:
Low-dimensional magnetic structures coupled with a superconductor are promising platforms for realizing Majorana zero modes, which are considered as novel non-Abelian anyons with potential applications in topological quantum computing. Here, we report the observation of in-gap edge states and zero-bias conductance peaks (ZBCPs) in a two-dimensional (2D) magnetic-superconducting heterostructure con…
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Low-dimensional magnetic structures coupled with a superconductor are promising platforms for realizing Majorana zero modes, which are considered as novel non-Abelian anyons with potential applications in topological quantum computing. Here, we report the observation of in-gap edge states and zero-bias conductance peaks (ZBCPs) in a two-dimensional (2D) magnetic-superconducting heterostructure consisting of a single-layer chromium diiodide (CrI2) on a niobium diselenide (NbSe2) superconductor. Single-layer CrI2 nanosheets, which hold antiferromagnetic (AFM) ground states according to our first-principles calculations, were epitaxially grown on the layered NbSe2 substrate. By using scanning tunneling microscopy/spectroscopy, we observed robust in-gap states spatially located at the edge of the nanosheets and defect-induced ZBCPs inside the CrI2 nanosheets. Magnetic-flux vortices induced by an external field exhibit broken threefold rotational symmetry of the pristine NbSe2 superconductor, implying the efficient modulation of the interfacial superconducting states by the epitaxial CrI2 layer. A phenomenological model was proposed and suggested the existence of chiral edge states in a 2D AFM-superconducting hybrid system with an even Chern number, providing a qualitatively plausible understanding for our experimental observation.
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Submitted 10 March, 2024;
originally announced March 2024.
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Orbital torque switching in perpendicularly magnetized materials
Authors:
Yuhe Yang,
Ping Wang,
Jiali Chen,
Delin Zhang,
Chang Pan,
Shuai Hu,
Ting Wang,
Wensi Yue,
Cheng Chen,
Wei Jiang,
Lujun Zhu,
Xuepeng Qiu,
Yugui Yao,
Yue Li,
Wenhong Wang,
Yong Jiang
Abstract:
The orbital Hall effect in light materials has attracted considerable attention for developing novel orbitronic devices. Here we investigate the orbital torque efficiency and demonstrate the switching of the perpendicularly magnetized materials through the orbital Hall material (OHM), i.e., Zirconium (Zr). The orbital torque efficiency of approximately 0.78 is achieved in the Zr OHM with the perpe…
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The orbital Hall effect in light materials has attracted considerable attention for developing novel orbitronic devices. Here we investigate the orbital torque efficiency and demonstrate the switching of the perpendicularly magnetized materials through the orbital Hall material (OHM), i.e., Zirconium (Zr). The orbital torque efficiency of approximately 0.78 is achieved in the Zr OHM with the perpendicularly magnetized [Co/Pt]3 sample, which significantly surpasses that of the perpendicularly magnetized CoFeB/Gd/CoFeB sample (approximately 0.04). Such notable difference is attributed to the different spin-orbit correlation strength between the [Co/Pt]3 sample and the CoFeB/Gd/CoFeB sample, which has been confirmed through the theoretical calculations. Furthermore, the full magnetization switching of the [Co/Pt]3 sample with a switching current density of approximately 2.6x106 A/cm2 has been realized through Zr, which even outperforms that of the W spin Hall material. Our finding provides a guideline to understand orbital torque efficiency and paves the way to develop energy-efficient orbitronic devices.
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Submitted 5 March, 2024;
originally announced March 2024.
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Revelation of new magnetic domain wall category in the itinerant antiferromagnet Chromium
Authors:
Yining Hu,
Xu Wang,
Chen Chen,
Qingle Zhang,
Dongming Zhao,
Tianzhen Zhang,
Chenxi Wang,
Donglai Feng,
Tong Zhang
Abstract:
Conventional magnetic domain walls are characterized by the reorientation of local moments. However, what occurs at the boundary of itinerant magnets is largely unknown. Here using spin-sensitive scanning tunneling microscopy, we investigated the microscopic boundaries of spin-density-wave (SDW) state in a prototypical itinerant anti-ferromagnet of Cr. We find at the boundary of two incommensurate…
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Conventional magnetic domain walls are characterized by the reorientation of local moments. However, what occurs at the boundary of itinerant magnets is largely unknown. Here using spin-sensitive scanning tunneling microscopy, we investigated the microscopic boundaries of spin-density-wave (SDW) state in a prototypical itinerant anti-ferromagnet of Cr. We find at the boundary of two incommensurate SDW domains, the spins display finite-scale decay rather than reorientation. A novel double-Q SDW is generated with a second-order charge modulation. In commensurate SDW domains, a clear SDW gap is observed. Screw dislocations induced novel "half" vortex and anti-vortex that are connected by antiphase domain wall. This domain wall is characterized by vanishing spin density, where intriguing SDW in-gap states emerge, resembling the Andreev bound states in superconductors. All these unique SDW boundary structures can be viewed as consequences of local interference of two SDW, either with different Q or reversed phases. Therefore, our study revealed a new category of magnetic domain wall, the "interference wall", with a mechanism rooted in itinerant nature.
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Submitted 25 February, 2024;
originally announced February 2024.
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Tuning the bandstructure of electrons in a two-dimensional artificial electrostatic crystal in GaAs quantum wells
Authors:
Daisy Q. Wang,
Zeb Krix,
Olga A. Tkachenko,
Vitaly A. Tkachenko,
Chong Chen,
Ian Farrer,
David A. Ritchie,
Oleg P. Sushkov,
Alexander R. Hamilton,
Oleh Klochan
Abstract:
The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest w…
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The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest while allowing precise control of key parameters. Cold atoms trapped in optical lattices provide great flexibility and tunability [1, 2], but cannot replicate the long range Coulomb interactions and long range hopping that drive collective phenomena in real crystals. Solid state approaches support long range hopping and interactions, but previous attempts with laterally patterned semiconductor systems were not able to create tunable low disorder artificial crystals, while approaches based on Moire superlattices in twisted two-dimensional (2D) materials [3, 4] have limited tunability and control of lattice geometry. Here we demonstrate the formation of highly tunable artificial crystals by superimposing a periodic electrostatic potential on the 2D electron gas in an ultrashallow (25 nm deep) GaAs quantum well. The 100 nm period artificial crystal is identified by the formation of a new bandstructure, different from the original cubic crystal and unique to the artificial triangular lattice: transport measurements show the Hall coefficient changing sign as the chemical potential sweeps through the artificial bands. Uniquely, the artificial bandstructure can be continuously tuned from parabolic free-electron bands into linear graphene-like and flat kagome-like bands in a single device. This approach allows the formation arbitrary geometry 2D artificial crystals, opening a new route to studying collective quantum states.
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Submitted 20 February, 2024;
originally announced February 2024.
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Enhancing a Many-body Dipolar Rydberg Tweezer Array with Arbitrary Local Controls
Authors:
Guillaume Bornet,
Gabriel Emperauger,
Cheng Chen,
Francisco Machado,
Sabrina Chern,
Lucas Leclerc,
Bastien Gély,
Daniel Barredo,
Thierry Lahaye,
Norman Y. Yao,
Antoine Browaeys
Abstract:
We implement and characterize a protocol that enables arbitrary local controls in a dipolar atom array, where the degree of freedom is encoded in a pair of Rydberg states. Our approach relies on a combination of local addressing beams and global microwave fields. Using this method, we directly prepare two different types of three-atom entangled states, including a W-state and a state exhibiting fi…
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We implement and characterize a protocol that enables arbitrary local controls in a dipolar atom array, where the degree of freedom is encoded in a pair of Rydberg states. Our approach relies on a combination of local addressing beams and global microwave fields. Using this method, we directly prepare two different types of three-atom entangled states, including a W-state and a state exhibiting finite chirality. We verify the nature of the underlying entanglement by performing quantum state tomography. Finally, leveraging our ability to measure multi-basis, multi-body observables, we explore the adiabatic preparation of low-energy states in a frustrated geometry consisting of a pair of triangular plaquettes. By using local addressing to tune the symmetry of the initial state, we demonstrate the ability to prepare correlated states distinguished only by correlations of their chirality (a fundamentally six-body observable). Our protocol is generic, allowing for rotations on arbitrary subgroups of atoms within the array at arbitrary times during the experiment; this extends the scope of capabilities for quantum simulations of the dipolar XY model.
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Submitted 16 February, 2024;
originally announced February 2024.
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Phonon and defect mediated quantum anomalous Hall insulator to metal transition in magnetically doped topological insulators
Authors:
Akiyoshi Park,
Adrian Llanos,
Chun-I Lu,
Yinan Chen,
Sebastien N. Abadi,
Chien- Chang Chen,
Marcus L. Teague,
Lixuan Tai,
Peng Zhang,
Kang L. Wang,
Nai-Chang Yeh
Abstract:
Quantum Anomalous Hall (QAH) state in six quintuple layer Cr$_{0.1}$(Bi$_{0.2}$Sb$_{0.8}$)$_{1.9}$Te$_3$ thin films were studied through scanning tunneling spectroscopy (STS) and electrical transport measurements. While the surface state is gapless above the Curie temperature ($T_\mathrm{C} \approx 30$ K), scanning tunneling spectroscopy (STS) of the sample reveals a topologically non-trivial gap…
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Quantum Anomalous Hall (QAH) state in six quintuple layer Cr$_{0.1}$(Bi$_{0.2}$Sb$_{0.8}$)$_{1.9}$Te$_3$ thin films were studied through scanning tunneling spectroscopy (STS) and electrical transport measurements. While the surface state is gapless above the Curie temperature ($T_\mathrm{C} \approx 30$ K), scanning tunneling spectroscopy (STS) of the sample reveals a topologically non-trivial gap with an average value of $\approx 13.5$ meV at 4.2 K below the ferromagnetic transition. Nonetheless, areal STS scans of the magnetic topological insulator exhibit energy modulations on the order of several meV's in the surface bands which result in the valence band maximum in some regions becoming higher than the energy of the conduction band minimum of some other regions that are spatially separated by no more than 3 nm. First principle calculations demonstrate that the origin of the observed inhomogeneous energy band alignment is an outcome of many-body interactions, namely electron-defect interactions and electron-phonon interactions. Defects play the role of locally modifying the energy landscape of surface bands while electron-phonon interactions renormalize the surface bands such that the surface gap becomes reduced by more than 1 meV as temperature is raised from 0 to 4.2 K. These many-body interactions at a finite temperature result in substantial increase of electron tunneling across the spatially separated conduction band pockets even for finite temperatures well below $T_\mathrm{C}$ , thus driving the magnetic topological insulator out of its QAH insulating phase into a metallic phase at a relatively low temperature.
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Submitted 12 February, 2024;
originally announced February 2024.
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Trilayer multi-orbital models of $\mathrm{La_{4}Ni_{3}O_{10}}$
Authors:
Cui-Qun Chen,
Zhihui Luo,
Meng Wang,
Wéi Wú,
Dao-Xin Yao
Abstract:
Recently, the discovery of superconductivity in Ruddlesden-Popper (RP) $\mathrm{La_4Ni_3O_{10}}$ under pressure has further expanded the realm of nickelate-based superconductor family. In this paper, we performed a first-principle study of $\mathrm{La_4Ni_3O_{10}}$ for both $P2_1/a$ phase at ambient pressure and $I4/mmm$ phase at high pressure, with $U$=0, 3.5\ eV. Our results confirmed the charac…
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Recently, the discovery of superconductivity in Ruddlesden-Popper (RP) $\mathrm{La_4Ni_3O_{10}}$ under pressure has further expanded the realm of nickelate-based superconductor family. In this paper, we performed a first-principle study of $\mathrm{La_4Ni_3O_{10}}$ for both $P2_1/a$ phase at ambient pressure and $I4/mmm$ phase at high pressure, with $U$=0, 3.5\ eV. Our results confirmed the characteristic upward shift of Ni-$d_{z^2}$ bonding band under pressure. Moreover, our analysis of electronic spectrum and orbital occupancy unveil the dynamic mechanism of electronic reconstructions under pressure, embedded in a critical dual effect. Based on our results, we further proposed a trilayer two-orbital model by performing Wannier downfolding on Ni-$e_g$ orbitals. Our model reveals four Fermi surface sheets with $α,β,β^\prime,γ$ pockets, bearing resemblance to that of bilayer $\mathrm{La_3Ni_2O_7}$. According to the model, our calculated spin susceptibility under random phase approximation shows that $d_{x^2-y^2}$ orbital is also important for the magnetic fluctuation in RP series. Finally, a high energy sixteen-orbital model with direct $dp,pp$ hoppings is proposed, which implies that $\mathrm{La_4Ni_3O_{10}}$ also lies in charge-transfer picture within Zaanen-Sawatzky-Allen scheme. Our exposition of electronic reconstructions and multi-orbital models shed light on theoretical electronic correlation study and experimental exploration of lower pressure superconductor in RP series.
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Submitted 24 April, 2024; v1 submitted 11 February, 2024;
originally announced February 2024.
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Distinct pressure evolution of superconductivity and charge-density-wave in kagome superconductor CsV$_3$Sb$_5$ thin flakes
Authors:
Ge Ye,
Mengwei Xie,
Chufan Chen,
Yanan Zhang,
Dongting Zhang,
Xin Ma,
Xiangyu Zeng,
Fanghang Yu,
Yi Liu,
Xiaozhi Wang,
Guanghan Cao,
Xiaofeng Xu,
Xianhui Chen,
Huiqiu Yuan,
Chao Cao,
Xin Lu
Abstract:
It is intriguing to explore the coexistence and (or) competition between charge-density-wave (CDW) and superconductivity (SC) in many correlated electron systems, such as cuprates, organic superconductors and dichacolgenides. Among them, the recently discovered $\mathbb{Z} _2$ topological kagome metals AV$_3$Sb$_5$ (A=K, Rb, Cs) serve as an ideal platform to study the intricate relation between th…
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It is intriguing to explore the coexistence and (or) competition between charge-density-wave (CDW) and superconductivity (SC) in many correlated electron systems, such as cuprates, organic superconductors and dichacolgenides. Among them, the recently discovered $\mathbb{Z} _2$ topological kagome metals AV$_3$Sb$_5$ (A=K, Rb, Cs) serve as an ideal platform to study the intricate relation between them. Here, we report the electrical resistance measurements on CsV$_3$Sb$_5$ thin flakes ($\approx$ 60 nm) under hydrostatic pressure up to 2.12 GPa to compare its pressure phase diagram of CDW and SC with its bulk form. Even though the CDW transition temperature (T$_{CDW}$) in CsV$_3$Sb$_5$ thin flakes is still monotonically suppressed under pressure and totally vanishes at P$_2$=1.83 GPa similar to the bulk, the superconducting transition temperature (T$_c$) shows an initial decrease and consequent increase up to its maximum $\sim$ 8.03 K at P$_2$, in sharp contrast with the M-shaped double domes in the bulk CsV$_3$Sb$_5$. Our results suggest the important role of reduced dimensionality on the CDW state and its interplay with the SC, offering a new perspective to explore the exotic nature of CsV$_3$Sb$_5$.
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Submitted 9 February, 2024;
originally announced February 2024.
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Electrical 180o switching of Néel vector in spin-splitting antiferromagnet
Authors:
Lei Han,
Xizhi Fu,
Rui Peng,
Xingkai Cheng,
Jiankun Dai,
Liangyang Liu,
Yidian Li,
Yichi Zhang,
Wenxuan Zhu,
Hua Bai,
Yongjian Zhou,
Shixuan Liang,
Chong Chen,
Qian Wang,
Xianzhe Chen,
Luyi Yang,
Yang Zhang,
Cheng Song,
Junwei Liu,
Feng Pan
Abstract:
Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1". However…
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Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o switching of Néel vector is a long-term goal for developing electrical-controllable antiferromagnetic memory with opposite Néel vectors as binary "0" and "1". However, the state-of-art antiferromagnetic switching mechanisms have long been limited for 90o or 120o switching of Néel vector, which unavoidably require multiple writing channels that contradicts ultra-dense integration. Here, we propose a deterministic switching mechanism based on spin-orbit torque with asymmetric energy barrier, and experimentally achieve electrical 180o switching of spin-splitting antiferromagnet Mn5Si3. Such a 180o switching is read out by the Néel vector-induced anomalous Hall effect. Based on our writing and readout methods, we fabricate an antiferromagnet device with electrical-controllable high and low resistance states that accomplishes robust write and read cycles. Besides fundamental advance, our work promotes practical spin-splitting antiferromagnetic devices based on spin-splitting antiferromagnet.
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Submitted 31 January, 2024;
originally announced January 2024.
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Two-Dimensional Phase-Fluctuating Superconductivity in Bulk-Crystalline NdO$_{0.5}$F$_{0.5}$BiS$_2$
Authors:
C. S. Chen,
J. Küspert,
I. Biało,
J. Mueller,
K. W. Chen,
M. Y. Zou,
D. G. Mazzone,
D. Bucher,
K. Tanaka,
O. Ivashko,
M. v. Zimmermann,
Qisi Wang,
Lei Shu,
J. Chang
Abstract:
We present a combined growth and transport study of superconducting single-crystalline NdO$_{0.5}$F$_{0.5}$BiS$_2$. Evidence of two-dimensional superconductivity with significant phase fluctuations of preformed Cooper pairs preceding the superconducting transition is reported. This result is based on three key observations. (1) The resistive superconducting transition temperature $T_c$ (defined by…
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We present a combined growth and transport study of superconducting single-crystalline NdO$_{0.5}$F$_{0.5}$BiS$_2$. Evidence of two-dimensional superconductivity with significant phase fluctuations of preformed Cooper pairs preceding the superconducting transition is reported. This result is based on three key observations. (1) The resistive superconducting transition temperature $T_c$ (defined by resistivity $ρ\rightarrow 0$) increases with increasing disorder. (2) As $T\rightarrow T_c$, the conductivity diverges significantly faster than what is expected from Gaussian fluctuations in two and three dimensions. (3) Non-Ohmic resistance behavior is observed in the superconducting state. Altogether, our observations are consistent with a temperature regime of phase-fluctuating superconductivity. The crystal structure with magnetic ordering tendencies in the NdO$_{0.5}$F$_{0.5}$ layers and (super)conductivity in the BiS$_2$ layers is likely responsible for the two-dimensional phase fluctuations. As such, NdO$_{0.5}$F$_{0.5}$BiS$_2$ falls into the class of unconventional ``laminar" bulk superconductors that include cuprate materials and 4Hb-TaS$_2$.
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Submitted 24 February, 2024; v1 submitted 30 January, 2024;
originally announced January 2024.
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Universal collective Larmor-Silin mode emerging in magnetized correlated Dirac fermions
Authors:
Chuang Chen,
Yuan Da Liao,
Chengkang Zhou,
Gaopei Pan,
Zi Yang Meng,
Yang Qi
Abstract:
Employing large-scale quantum Monte Carlo simulations, we find in magnetized interacting Dirac fermion model, there emerges a new and universal collective Larmor-Silin spin wave mode in the transverse dynamical spin susceptibility. Such mode purely originates from the interaction among Dirac fermions and distinguishes itself from the usual particle-hole continuum with finite lifetime and clear dis…
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Employing large-scale quantum Monte Carlo simulations, we find in magnetized interacting Dirac fermion model, there emerges a new and universal collective Larmor-Silin spin wave mode in the transverse dynamical spin susceptibility. Such mode purely originates from the interaction among Dirac fermions and distinguishes itself from the usual particle-hole continuum with finite lifetime and clear dispersion, both at small and large momenta in a large portion of the Brillouin zone. Our unbiased numerical results offer the dynamic signature of this new collective excitations in interacting Dirac fermion systems, and provide experimental guidance for inelastic neutron scattering, electron spin resonance and other spectroscopic approaches in the investigation of such universal collective modes in quantum Moire materials, topological insulators and quantum spin liquid materials under magnetic field, with quintessential interaction nature beyond the commonly assumed noninteracting Dirac fermion or spinon approximations.
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Submitted 29 January, 2024; v1 submitted 25 January, 2024;
originally announced January 2024.
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Disorder-induced phase transitions in higher-order nodal line semimetals
Authors:
Yue-Ran Ding,
Dong-Hui Xu,
Chui-Zhen Chen
Abstract:
Higher-order nodal line semimetals represent a recently proposed topological semimetal class that harbors bulk nodal lines and features gapless hinge Fermi arc excitations, governed by the bulk-hinge correspondence. In this study, we investigate the disorder effect on a higher-order nodal line semimetal and the consequent phase transitions. Within the pristine higher-order nodal line semimetal mod…
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Higher-order nodal line semimetals represent a recently proposed topological semimetal class that harbors bulk nodal lines and features gapless hinge Fermi arc excitations, governed by the bulk-hinge correspondence. In this study, we investigate the disorder effect on a higher-order nodal line semimetal and the consequent phase transitions. Within the pristine higher-order nodal line semimetal model, we unveil three distinct phases: higher-order nodal line semimetal, conventional nodal line semimetal, and normal insulator. The higher-order nodal line semimetal is characterized by one-dimensional hinge Fermi arc states connecting a pair of nodal rings, contrasting with conventional nodal line semimetals that exhibit two-dimensional drumhead surface states. We demonstrate that disorder can trigger multiple phase transitions within this system. Significantly, intermediate disorder can induce higher-order topology in an initial conventional nodal line semimetal or even an initial normal insulator. Further increase in disorder drives the system through a diffusive metallic phase before ultimately reaching the Anderson insulator regime. Employing a combination of finite-size scaling analysis and an effective medium theory, we construct a comprehensive phase diagram, elucidating the intricate interplay between disorder and topology.
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Submitted 24 January, 2024;
originally announced January 2024.
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Reentrant quantum anomalous Hall effect in molecular beam epitaxy-grown MnBi2Te4 thin films
Authors:
Yuanzhao Li,
Yunhe Bai,
Yang Feng,
Jianli Luan,
Zongwei Gao,
Yang Chen,
Yitian Tong,
Ruixuan Liu,
Su Kong Chong,
Kang L. Wang,
Xiaodong Zhou,
Jian Shen,
Jinsong Zhang,
Yayu Wang,
Chui-Zhen Chen,
XinCheng Xie,
Xiao Feng,
Ke He,
Qi-Kun Xue
Abstract:
In this study, we investigate intrinsic magnetic topological insulator MnBi2Te4 thin films grown by molecular beam epitaxy. We observe a reentrant quantum anomalous Hall effect when the Fermi energy enters the valance band and magnetic field equals zero, indicating the emergence of the Chern Anderson insulator state. The discovery opens a new avenue for realizing the QAH effect and underscores the…
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In this study, we investigate intrinsic magnetic topological insulator MnBi2Te4 thin films grown by molecular beam epitaxy. We observe a reentrant quantum anomalous Hall effect when the Fermi energy enters the valance band and magnetic field equals zero, indicating the emergence of the Chern Anderson insulator state. The discovery opens a new avenue for realizing the QAH effect and underscores the fundamental role of both Berry curvature and Anderson localization.
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Submitted 21 January, 2024;
originally announced January 2024.
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Inner Structure of Many-Body Localization Transition and Fulfillment of Harris Criterion
Authors:
Jie Chen,
Chun Chen,
Xiaoqun Wang
Abstract:
We treat disordered Heisenberg model in 1D as the "standard model" of many-body localization (MBL). Two independent order parameters stemming purely from the half-chain von Neumann entanglement entropy $S_{\textrm{vN}}$ are introduced to probe its eigenstate transition. From symmetry-endowed entropy decomposition, they are probability distribution deviation $|d(p_n)|$ and von Neumann entropy…
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We treat disordered Heisenberg model in 1D as the "standard model" of many-body localization (MBL). Two independent order parameters stemming purely from the half-chain von Neumann entanglement entropy $S_{\textrm{vN}}$ are introduced to probe its eigenstate transition. From symmetry-endowed entropy decomposition, they are probability distribution deviation $|d(p_n)|$ and von Neumann entropy $S_{\textrm{vN}}^{n}(D_n\!=\!\mbox{max})$ of the maximum-dimensional symmetry subdivision. Finite-size analyses reveal that $\{p_n\}$ drives the localization transition, preceded by a thermalization breakdown transition governed by $\{S_{\textrm{vN}}^{n}\}$. For noninteracting case, these transitions coincide, but in interacting situation they separate. Such separability creates an intermediate phase region and may help discriminate between the Anderson and MBL transitions. An obstacle whose solution eludes community to date is the violation of Harris criterion in nearly all numeric investigations of MBL so far. Upon elucidating the mutually independent components in $S_{\textrm{vN}}$, it is clear that previous studies of eigenspectra, $S_{\textrm{vN}}$, and the like lack resolution to pinpoint (thus completely overlook) the crucial internal structures of the transition. We show, for the first time, that after this necessary decoupling, the universal critical exponents for both transitions of $|d(p_n)|$ and $S_{\textrm{vN}}^{n}(D_n\!=\!\mbox{max})$ fulfill the Harris criterion: $ν\approx2.0\ (ν\approx1.5)$ for quench (quasirandom) disorder. Our work puts forth "symmetry combined with entanglement" as the missing organization principle for the generic eigenstate matter and transition.
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Submitted 20 January, 2024;
originally announced January 2024.
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Accelerating computational materials discovery with artificial intelligence and cloud high-performance computing: from large-scale screening to experimental validation
Authors:
Chi Chen,
Dan Thien Nguyen,
Shannon J. Lee,
Nathan A. Baker,
Ajay S. Karakoti,
Linda Lauw,
Craig Owen,
Karl T. Mueller,
Brian A. Bilodeau,
Vijayakumar Murugesan,
Matthias Troyer
Abstract:
High-throughput computational materials discovery has promised significant acceleration of the design and discovery of new materials for many years. Despite a surge in interest and activity, the constraints imposed by large-scale computational resources present a significant bottleneck. Furthermore, examples of large-scale computational discovery carried through experimental validation remain scar…
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High-throughput computational materials discovery has promised significant acceleration of the design and discovery of new materials for many years. Despite a surge in interest and activity, the constraints imposed by large-scale computational resources present a significant bottleneck. Furthermore, examples of large-scale computational discovery carried through experimental validation remain scarce, especially for materials with product applicability. Here we demonstrate how this vision became reality by first combining state-of-the-art artificial intelligence (AI) models and traditional physics-based models on cloud high-performance computing (HPC) resources to quickly navigate through more than 32 million candidates and predict around half a million potentially stable materials. By focusing on solid-state electrolytes for battery applications, our discovery pipeline further identified 18 promising candidates with new compositions and rediscovered a decade's worth of collective knowledge in the field as a byproduct. By employing around one thousand virtual machines (VMs) in the cloud, this process took less than 80 hours. We then synthesized and experimentally characterized the structures and conductivities of our top candidates, the Na$_x$Li$_{3-x}$YCl$_6$ ($0 < x < 3$) series, demonstrating the potential of these compounds to serve as solid electrolytes. Additional candidate materials that are currently under experimental investigation could offer more examples of the computational discovery of new phases of Li- and Na-conducting solid electrolytes. We believe that this unprecedented approach of synergistically integrating AI models and cloud HPC not only accelerates materials discovery but also showcases the potency of AI-guided experimentation in unlocking transformative scientific breakthroughs with real-world applications.
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Submitted 8 January, 2024;
originally announced January 2024.
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Absence of Weyl nodes in EuCd$_2$As$_2$ revealed by the carrier density dependence of the anomalous Hall effect
Authors:
Yue Shi,
Zhaoyu Liu,
Logan A. Burnett,
Seokhyeong Lee,
Chaowei Hu,
Qianni Jiang,
Jiaqi Cai,
Xiaodong Xu,
Mo Li,
Cheng-Chien Chen,
Jiun-Haw Chu
Abstract:
The antiferromagnetic layered compound EuCd$_2$As$_2$ is widely considered as a leading candidate of ideal Weyl semimetal, featuring a single pair of Weyl nodes in its field-induced ferromagnetic (FM) state. Nevertheless, this view has recently been challenged by an optical spectroscopy study, which suggests that it is a magnetic semiconductor. In this study, we have successfully synthesized highl…
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The antiferromagnetic layered compound EuCd$_2$As$_2$ is widely considered as a leading candidate of ideal Weyl semimetal, featuring a single pair of Weyl nodes in its field-induced ferromagnetic (FM) state. Nevertheless, this view has recently been challenged by an optical spectroscopy study, which suggests that it is a magnetic semiconductor. In this study, we have successfully synthesized highly insulating EuCd$_2$As$_2$ crystals with carrier density reaching as low as $2\times 10^{15}$ $\text{cm}^{-3}$. The magneto-transport measurements revealed a progressive decrease of the anomalous Hall conductivity (AHC) by several orders of magnitude as the carrier density decreases. This behavior contradicts with what is expected from the intrinsic AHC generated by the Weyl points, which is independent of carrier density as the Fermi level approaches the charge neutrality point. In contrast, the scaling relationship between AHC and longitudinal conductivity aligns with the characteristics of variable range hopping insulators. Our results suggest that EuCd$_2$As$_2$ is a magnetic semiconductor rather than a topological Weyl semimetal.
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Submitted 27 February, 2024; v1 submitted 29 December, 2023;
originally announced January 2024.
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Engineering Plateau Phase Transition in Quantum Anomalous Hall Multilayers
Authors:
Deyi Zhuo,
Ling-Jie Zhou,
Yi-Fan Zhao,
Ruoxi Zhang,
Zi-Jie Yan,
Annie G. Wang,
Moses H. W. Chan,
Chao-Xing Liu,
Chui-Zhen Chen,
Cui-Zu Chang
Abstract:
The plateau phase transition in quantum anomalous Hall (QAH) insulators corresponds to a quantum state wherein a single magnetic domain gives way to multiple magnetic domains and then re-converges back to a single magnetic domain. The layer structure of the sample provides an external knob for adjusting the Chern number C of the QAH insulators. Here, we employ molecular beam epitaxy (MBE) to grow…
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The plateau phase transition in quantum anomalous Hall (QAH) insulators corresponds to a quantum state wherein a single magnetic domain gives way to multiple magnetic domains and then re-converges back to a single magnetic domain. The layer structure of the sample provides an external knob for adjusting the Chern number C of the QAH insulators. Here, we employ molecular beam epitaxy (MBE) to grow magnetic topological insulator (TI) multilayers with an asymmetric layer structure and realize the magnetic field-driven plateau phase transition between two QAH states with odd Chern number change ΔC. In multilayer structures with C=+-1 and C=+-2 QAH states, we find two characteristic power-law behaviors between temperature and the scaling variables on the magnetic field at transition points. The critical exponents extracted for the plateau phase transitions with ΔC=1 and ΔC=3 in QAH insulators are found to be nearly identical, specifically, k1~0.390+-0.021 and k2~0.388+-0.015, respectively. We construct a four-layer Chalker-Coddington network model to understand the consistent critical exponents for the plateau phase transitions with ΔC=1 and ΔC=3. This work will motivate further investigations into the critical behaviors of plateau phase transitions with different ΔC in QAH insulators and provide new opportunities for the development of QAH chiral edge current-based electronic and spintronic devices.
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Submitted 14 January, 2024; v1 submitted 22 December, 2023;
originally announced December 2023.
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Cavitation in elastomers: A review of the evidence against elasticity
Authors:
Evan Breedlove,
Chao Chen,
David Lindeman,
Oscar Lopez-Pamies
Abstract:
In spite of the growing body of evidence against it, the elasticity view of the phenomenon of cavitation in elastomers continues to be utilized in numerous studies. In this context, the main objective of this paper is to provide a comprehensive review of the existing evidence that settles that cavitation in elastomers is \emph{not} a purely elastic phenomenon. To that end, a review is first given…
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In spite of the growing body of evidence against it, the elasticity view of the phenomenon of cavitation in elastomers continues to be utilized in numerous studies. In this context, the main objective of this paper is to provide a comprehensive review of the existing evidence that settles that cavitation in elastomers is \emph{not} a purely elastic phenomenon. To that end, a review is first given of the experimental observations of cavitation in elastomers -- gathered since the 1930s until present times -- as well as of its theoretical description as an elastic phenomenon -- whose development started in the 1950s and was substantially completed by the 2010s. The latter is then confronted to the former to pinpoint the reasons why the elastic behavior of elastomers cannot possibly explain the experimental observations. The last part of the paper includes a brief summary of the current view of cavitation as a fracture phenomenon and an outlook for the field in that direction.
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Submitted 22 December, 2023;
originally announced December 2023.
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Tailoring Amorphous Boron Nitride for High-Performance 2D Electronics
Authors:
Cindy Y. Chen,
Zheng Sun,
Riccardo Torsi,
Ke Wang,
Jessica Kachian,
Bangzhi Liu,
Gilbert B. Rayner Jr,
Zhihong Chen,
Joerg Appenzeller,
Yu-Chuan Lin,
Joshua A. Robinson
Abstract:
Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in next-generation electronics and photonics, precise control over the dielectric environment surrounding the 2D material is critical. The lack of nucleation sites on 2D surfac…
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Two-dimensional (2D) materials have garnered significant attention in recent years due to their atomically thin structure and unique electronic and optoelectronic properties. To harness their full potential for applications in next-generation electronics and photonics, precise control over the dielectric environment surrounding the 2D material is critical. The lack of nucleation sites on 2D surfaces to form thin, uniform dielectric layers often leads to interfacial defects that degrade the device performance, posing a major roadblock in the realization of 2D-based devices. Here, we demonstrate a wafer-scale, low-temperature process (< 250 °C) using atomic layer deposition (ALD) for the synthesis of uniform, conformal amorphous boron nitride (aBN) thin films. ALD deposition temperatures between 125 and 250 °C result in stoichiometric films with high oxidative stability, yielding a dielectric strength of 8.2 MV/cm. Utilizing a seed-free ALD approach, we form uniform aBN dielectric layers on 2D surfaces and fabricate multiple quantum well structures of aBN/MoS2 and aBN-encapsulated double-gated monolayer (ML) MoS2 field-effect transistors to evaluate the impact of aBN dielectric environment on MoS2 optoelectronic and electronic properties. Our work in scalable aBN dielectric integration paves a way towards realizing the theoretical performance of 2D materials for next-generation electronics.
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Submitted 14 December, 2023;
originally announced December 2023.
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Giant X-ray circular dichroism in a time-reversal invariant altermagnet
Authors:
Jun Okamoto,
Ru-Pan Wang,
Yen-Yi Chu,
Hung-Wei Shiu,
Amol Singh,
Hsiao-Yu Huang,
Chung-Yu Mou,
Sucitto Teh,
Horng-Tay Jeng,
Kai Du,
Xianghan Xu,
Sang-Wook Cheong,
Chao-Hung Du,
Chien-Te Chen,
Atsushi Fujimori,
Di-Jing Huang
Abstract:
X-ray circular dichroism, arising from the contrast in X-ray absorption between opposite photon helicities, serves as a spectroscopic tool to measure the magnetization of ferromagnetic materials and identify the handedness of chiral crystals. Antiferromagnets with crystallographic chirality typically lack X-ray magnetic circular dichroism because of time-reversal symmetry, yet exhibit weak X-ray n…
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X-ray circular dichroism, arising from the contrast in X-ray absorption between opposite photon helicities, serves as a spectroscopic tool to measure the magnetization of ferromagnetic materials and identify the handedness of chiral crystals. Antiferromagnets with crystallographic chirality typically lack X-ray magnetic circular dichroism because of time-reversal symmetry, yet exhibit weak X-ray natural circular dichroism. Here, we report the observation of giant natural circular dichroism in the Ni $L_3$-edge X-ray absorption of Ni$_3$TeO$_6$, a polar and chiral antiferromagnet with effective time-reversal symmetry. To unravel this intriguing phenomenon, we propose a phenomenological model that classifies the movement of photons in a chiral crystal within the same symmetry class as that of a magnetic field. The coupling of X-ray polarization with the induced magnetization yields giant X-ray natural circular dichroism, revealing the altermagnetism of Ni$_3$TeO$_6$. Our findings provide evidence for the interplay between magnetism and crystal chirality in natural optical activity. Additionally, we establish the first example of a new class of magnetic materials exhibiting circular dichroism with time-reversal symmetry.
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Submitted 23 February, 2024; v1 submitted 12 December, 2023;
originally announced December 2023.
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Formal Green's function theory in non-Hermitian lattice systems
Authors:
Changrui Chen,
Wenan Guo
Abstract:
In this paper, we employ the generalized Bloch theory to rediscover the generalized Brillouin zone theory and follow this way to obtain the Green's function of the non-Hermitian system. We focus on a classical chiral model and give the exact expression of the Green's function for a finite-size system and the formal expression of the Green's function suitable for infinite size. Based on these resul…
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In this paper, we employ the generalized Bloch theory to rediscover the generalized Brillouin zone theory and follow this way to obtain the Green's function of the non-Hermitian system. We focus on a classical chiral model and give the exact expression of the Green's function for a finite-size system and the formal expression of the Green's function suitable for infinite size. Based on these results, we further derive the correlation matrix and validate it numerically against direct calculations for a system of size 40. The numerical results show the accuracy of our exact expression and the high fidelity of our formal expression.
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Submitted 6 May, 2024; v1 submitted 8 December, 2023;
originally announced December 2023.
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Effects of domain walls and chiral supercurrent in quantum anomalous Hall Josephson junctions
Authors:
Junjie Qi,
Haiwen Liu,
Jie Liu,
Hua Jiang,
Dong E. Liu,
Chui-Zhen Chen,
Ke He,
X. C. Xie
Abstract:
The intriguing interplay between topology and superconductivity has attracted significant attention, given its potential for realizing topological superconductivity. In this study, we investigate the transport properties of the chiral Josephson effect in the quantum anomalous Hall insulators (QAHIs)-based junction. We reveal a systematic crossover from edge-state to bulk-state dominant supercurren…
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The intriguing interplay between topology and superconductivity has attracted significant attention, given its potential for realizing topological superconductivity. In this study, we investigate the transport properties of the chiral Josephson effect in the quantum anomalous Hall insulators (QAHIs)-based junction. We reveal a systematic crossover from edge-state to bulk-state dominant supercurrents, with a notable $0-π$ transition observed under non-zero magnetic flux through chemical potential adjustments. This transition underscores the competition between bulk and chiral edge transport. Furthermore, we identify an evolution among three distinct quantum interference patterns: from a $2Φ_0$-periodic oscillation pattern, to a $Φ_0$-periodic oscillation pattern, and then to an asymmetric Fraunhofer pattern ($Φ_0 = h/2e$ is the flux quantum, $h$ the Planck constant, and $e$ the electron charge). Subsequently, we examine the influence of domains on quantum interference patterns. Intriguingly, a distinctive Fraunhofer-like pattern emerges due to coexistence of chiral edge states and domain wall states, even when the chemical potential is within gap. These results not only advance the theoretical understanding but also pave the way for the experimental discovery of the chiral Josephson effect based on QAHI doped with magnetic impurities.
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Submitted 14 December, 2023; v1 submitted 30 November, 2023;
originally announced December 2023.
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Fiber-based Ratiometric Optical Thermometry with Silicon-Vacancy in Microdiamonds
Authors:
Md Shakhawath Hossain,
Miguel Bacaoco,
Thi Ngoc Anh Mai,
Guillaume Ponchon,
Chaohao Chen,
Lei Ding,
Yongliang Chen,
Evgeny Ekimov,
Helen Xu,
Alexander S. Solntsev,
Toan Trong Tran
Abstract:
Fiber optic all-optical thermometry is a promising technology to track temperature at a micro-scale while designing efficient and reliable microelectronic devices and components. In this work, we demonstrate a novel real-time ratiometric fiber optic thermometry technique based on silicon-vacancy (SiV) diamond that shows the highest temperature resolution (22.91 KHz^(-1/2) Wcm^(-2)) and spatial res…
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Fiber optic all-optical thermometry is a promising technology to track temperature at a micro-scale while designing efficient and reliable microelectronic devices and components. In this work, we demonstrate a novel real-time ratiometric fiber optic thermometry technique based on silicon-vacancy (SiV) diamond that shows the highest temperature resolution (22.91 KHz^(-1/2) Wcm^(-2)) and spatial resolution (~7.5 um) among all-optical fiber-based thermosensors reported to date. Instead of analyzing the spectral features of temperature-dependent SiV signal, coming from SiV micro-diamond fixed on the fiber tip, an alternative parallel detection method based on filtering optics and photon counters is proposed to read out the sample temperature in real-time. The signal collection efficiency of the fiber is also investigated numerically with semi-analytic ray-optical analysis and then compared with our experimental study. We finally demonstrate the performance of the thermosensor by monitoring the temperature at distinct locations in a lab-built graphite-based microheater device. Our work introduces a reconfigurable method for temperature monitoring in microelectronic, microfluidic devices, or biological environments and unlocks a new direction for fiber-based all-optical thermometry research.
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Submitted 29 November, 2023;
originally announced November 2023.
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Structural transition, electric transport, and electronic structures in the compressed trilayer nickelate La4Ni3O10
Authors:
Jingyuan Li,
Cui-Qun Chen,
Chaoxin Huang,
Yifeng Han,
Mengwu Huo,
Xing Huang,
Peiyue Ma,
Zhengyang Qiu,
Junfeng Chen,
Xunwu Hu,
Lan Chen,
Tao Xie,
Bing Shen,
Hualei Sun,
Dao-Xin Yao,
Meng Wang
Abstract:
Atomic structure and electronic band structure are fundamental properties for understanding the mechanism of superconductivity. Motivated by the discovery of pressure-induced high-temperature superconductivity at 80 K in the bilayer Ruddlesden-Popper nickelate La3Ni2O7, the atomic structure and electronic band structure of the trilayer nickelate La4Ni3O10 under pressure up to 44.3 GPa are investig…
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Atomic structure and electronic band structure are fundamental properties for understanding the mechanism of superconductivity. Motivated by the discovery of pressure-induced high-temperature superconductivity at 80 K in the bilayer Ruddlesden-Popper nickelate La3Ni2O7, the atomic structure and electronic band structure of the trilayer nickelate La4Ni3O10 under pressure up to 44.3 GPa are investigated. A structural transition from the monoclinic P21/a space group to the tetragonal I4/mmm around 12.6-13.4 GPa is identified, accompanying with a drop of resistance below 7 K. Density functional theory calculations suggest that the bonding state of Ni 3dz2 orbital rises and crosses the Fermi level at high pressures, which may give rise to possible superconductivity observed in resistance under pressure in La4Ni3O10. The trilayer nickelate La4Ni3O10 shows some similarities with the bilayer La3Ni2O7 and has unique properties, providing a new platform to investigate the underlying mechanism of superconductivity in nickelates.
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Submitted 30 March, 2024; v1 submitted 28 November, 2023;
originally announced November 2023.
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Cryogenic Thermal Shock Effects on Optical Properties of Quantum Emitters in Hexagonal Boron Nitride
Authors:
Thi Ngoc Anh Mai,
Sajid Ali,
Md Shakhawath Hossain,
Chaohao Chen,
Lei Ding,
Yongliang Chen,
Alexander S. Solntsev,
Hongwei Mou,
Xiaoxue Xu,
Nikhil Medhekar,
Toan Trong Tran
Abstract:
Solid-state quantum emitters are vital building blocks for quantum information science and quantum technology. Among various types of solid-state emitters discovered to date, color centers in hexagonal boron nitride have garnered tremendous traction in recent years thanks to their environmental robustness, high brightness and room-temperature operation. Most recently, these quantum emitters have b…
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Solid-state quantum emitters are vital building blocks for quantum information science and quantum technology. Among various types of solid-state emitters discovered to date, color centers in hexagonal boron nitride have garnered tremendous traction in recent years thanks to their environmental robustness, high brightness and room-temperature operation. Most recently, these quantum emitters have been employed for satellite-based quantum key distribution. One of the most important requirements to qualify these emitters for space-based applications is their optical stability against cryogenic thermal shock. Such understanding has, however, remained elusive to date. Here, we report on the effects caused by such thermal shock which induces random, irreversible changes in the spectral characteristics of the quantum emitters. By employing a combination of structural characterizations and density functional calculations, we attribute the observed changes to lattice strains caused by the cryogenic temperature shock. Our study shed light on the stability of the quantum emitters under extreme conditions, similar to those countered in outer space.
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Submitted 28 November, 2023;
originally announced November 2023.
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Spectroscopy of elementary excitations from quench dynamics in a dipolar XY Rydberg simulator
Authors:
Cheng Chen,
Gabriel Emperauger,
Guillaume Bornet,
Filippo Caleca,
Bastien Gély,
Marcus Bintz,
Shubhayu Chatterjee,
Vincent Liu,
Daniel Barredo,
Norman Y. Yao,
Thierry Lahaye,
Fabio Mezzacapo,
Tommaso Roscilde,
Antoine Browaeys
Abstract:
We use a Rydberg quantum simulator to demonstrate a new form of spectroscopy, called quench spectroscopy, which probes the low-energy excitations of a many-body system. We illustrate the method on a two-dimensional simulation of the spin-1/2 dipolar XY model. Through microscopic measurements of the spatial spin correlation dynamics following a quench, we extract the dispersion relation of the elem…
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We use a Rydberg quantum simulator to demonstrate a new form of spectroscopy, called quench spectroscopy, which probes the low-energy excitations of a many-body system. We illustrate the method on a two-dimensional simulation of the spin-1/2 dipolar XY model. Through microscopic measurements of the spatial spin correlation dynamics following a quench, we extract the dispersion relation of the elementary excitations for both ferro- and anti-ferromagnetic couplings. We observe qualitatively different behaviors between the two cases that result from the long-range nature of the interactions, and the frustration inherent in the antiferromagnet. In particular, the ferromagnet exhibits elementary excitations behaving as linear spin waves. In the anti-ferromagnet, spin waves appear to decay, suggesting the presence of strong nonlinearities. Our demonstration highlights the importance of power-law interactions on the excitation spectrum of a many-body system.
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Submitted 20 November, 2023;
originally announced November 2023.
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An efficient and exact noncommutative quantum Gibbs sampler
Authors:
Chi-Fang Chen,
Michael J. Kastoryano,
András Gilyén
Abstract:
Preparing thermal and ground states is an essential quantum algorithmic task for quantum simulation. In this work, we construct the first efficiently implementable and exactly detailed-balanced Lindbladian for Gibbs states of arbitrary noncommutative Hamiltonians. Our construction can also be regarded as a continuous-time quantum analog of the Metropolis-Hastings algorithm. To prepare the quantum…
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Preparing thermal and ground states is an essential quantum algorithmic task for quantum simulation. In this work, we construct the first efficiently implementable and exactly detailed-balanced Lindbladian for Gibbs states of arbitrary noncommutative Hamiltonians. Our construction can also be regarded as a continuous-time quantum analog of the Metropolis-Hastings algorithm. To prepare the quantum Gibbs state, our algorithm invokes Hamiltonian simulation for a time proportional to the mixing time and the inverse temperature $β$, up to polylogarithmic factors. Moreover, the gate complexity reduces significantly for lattice Hamiltonians as the corresponding Lindblad operators are (quasi-) local (with radius $\simβ$) and only depend on local Hamiltonian patches. Meanwhile, purifying our Lindbladians yields a temperature-dependent family of frustration-free "parent Hamiltonians", prescribing an adiabatic path for the canonical purified Gibbs state (i.e., the Thermal Field Double state). These favorable features suggest that our construction is the ideal quantum algorithmic counterpart of classical Markov chain Monte Carlo sampling.
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Submitted 15 November, 2023;
originally announced November 2023.
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Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures
Authors:
Simrjit Singh,
Kwan-Ho Kim,
Kiyoung Jo,
Pariasadat Musavigharavi,
Bumho Kim,
Jeffrey Zheng,
Nicholas Trainor,
Chen Chen,
Joan M. Redwing,
Eric A Stach,
Roy H Olsson III,
Deep Jariwala
Abstract:
Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D materials with ferroelectrics is a promising strategy; however, its experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-eff…
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Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D materials with ferroelectrics is a promising strategy; however, its experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-effect transistors using a ML-WSe2 channel and a AlScN ferroelectric dielectric, and experimentally demonstrate efficient tuning as well as non-volatile control of valley polarization. We measured a large array of transistors and obtained a maximum valley polarization of ~27% at 80 K with stable retention up to 5400 secs. The enhancement in the valley polarization was ascribed to the efficient exciton-to-trion (X-T) conversion and its coupling with an out-of-plane electric field, viz. the quantum-confined Stark effect. This changes the valley depolarization pathway from strong exchange interactions to slow spin-flip intervalley scattering. Our research demonstrates a promising approach for achieving non-volatile control over valley polarization and suggests new design principles for practical valleytronic devices.
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Submitted 14 November, 2023;
originally announced November 2023.
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Overcoming the Size Limit of First Principles Molecular Dynamics Simulations with an In-Distribution Substructure Embedding Active Learner
Authors:
Lingyu Kong,
Jielan Li,
Lixin Sun,
Han Yang,
Hongxia Hao,
Chi Chen,
Nongnuch Artrith,
Jose Antonio Garrido Torres,
Ziheng Lu,
Yichi Zhou
Abstract:
Large-scale first principles molecular dynamics are crucial for simulating complex processes in chemical, biomedical, and materials sciences. However, the unfavorable time complexity with respect to system sizes leads to prohibitive computational costs when the simulation contains over a few hundred atoms in practice. We present an In-Distribution substructure Embedding Active Learner (IDEAL) to e…
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Large-scale first principles molecular dynamics are crucial for simulating complex processes in chemical, biomedical, and materials sciences. However, the unfavorable time complexity with respect to system sizes leads to prohibitive computational costs when the simulation contains over a few hundred atoms in practice. We present an In-Distribution substructure Embedding Active Learner (IDEAL) to enable efficient simulation of large complex systems with quantum accuracy by maintaining a machine learning force field (MLFF) as an accurate surrogate to the first principles methods. By extracting high-uncertainty substructures into low-uncertainty atom environments, the active learner is allowed to concentrate on and learn from small substructures of interest rather than carrying out intractable quantum chemical computations on large structures. IDEAL is benchmarked on various systems and shows sub-linear complexity, accelerating the simulation thousands of times compared with conventional active learning and millions of times compared with pure first principles simulations. To demonstrate the capability of IDEAL in practical applications, we simulated a polycrystalline lithium system composed of one million atoms and the full ammonia formation process in a Haber-Bosch reaction on a 3-nm Iridium nanoparticle catalyst on a computing node comprising one single A100 GPU and 24 CPU cores.
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Submitted 14 November, 2023; v1 submitted 14 November, 2023;
originally announced November 2023.
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Linear dichroic x-ray absorption response of Ti-Ti dimers along the $c$ axis in Ti$_2$O$_3$ upon Mg substitution
Authors:
M. Okawa,
D. Takegami,
D. S. Christovam,
M. Ferreira-Carvalho,
C. -Y. Kuo,
C. T. Chen,
T. Miyoshino,
K. Takasu,
T. Okuda,
C. F. Chang,
L. H. Tjeng,
T. Mizokawa
Abstract:
Corundum oxide Ti$_2$O$_3$ shows the metal-insulator transition around 400-600 K accompanying the nearest Ti$^{3+}$-Ti$^{3+}$ bond ($a_{1g}a_{1g}$ singlet state) formation along the $c$ axis. In order to clarify the hole-doping effect for the $a_{1g}a_{1g}$ singlet bond in Ti$_2$O$_3$, we investigated Ti $3d$ orbital anisotropy between corundum-type Ti$_2$O$_3$ and ilmenite-type MgTiO$_3$ using li…
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Corundum oxide Ti$_2$O$_3$ shows the metal-insulator transition around 400-600 K accompanying the nearest Ti$^{3+}$-Ti$^{3+}$ bond ($a_{1g}a_{1g}$ singlet state) formation along the $c$ axis. In order to clarify the hole-doping effect for the $a_{1g}a_{1g}$ singlet bond in Ti$_2$O$_3$, we investigated Ti $3d$ orbital anisotropy between corundum-type Ti$_2$O$_3$ and ilmenite-type MgTiO$_3$ using linear dichroism of soft x-ray absorption spectroscopy of the Ti $L_{2,3}$ edge. From the linear dichroic spectral weight in Mg$_y$Ti$_{2-y}$O$_3$, we confirmed that the $a_{1g}a_{1g}$ state is dominant not only in $y=0.01$ (almost Ti$_2$O$_3$), but also in $y = 0.29$, indicating that the Ti-Ti bond survives against a certain level of hole doping. In $y=0.63$ corresponding to 46% hole doping per Ti, the $3d$ orbital symmetry changes from $a_{1g}$ to $e_g^π$.
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Submitted 8 November, 2023;
originally announced November 2023.
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Signature of Topological Semimetal in Harmonic-honeycomb ReO3
Authors:
Yifeng Han,
Cui-Qun Chen,
Hualei Sun,
Shuang Zhao,
Long Jiang,
Yuxuan Liu,
Zhongxiong Sun,
Meng Wang,
Hongliang Dong,
Ziyou Zhang,
Zhiqiang Chen,
Bin Chen,
Dao-Xin Yao,
Man-Rong Li
Abstract:
Transition-metal honeycomb compounds are capturing scientific attention due to their distinctive electronic configurations, underscored by the triangular-lattice spin-orbit coupling and competition between multiple interactions, paving the way for potential manifestations of phenomena such as Dirac semimetal, superconductivity, and quantum spin liquid states. These compounds can undergo discernibl…
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Transition-metal honeycomb compounds are capturing scientific attention due to their distinctive electronic configurations, underscored by the triangular-lattice spin-orbit coupling and competition between multiple interactions, paving the way for potential manifestations of phenomena such as Dirac semimetal, superconductivity, and quantum spin liquid states. These compounds can undergo discernible pressure-induced alterations in their crystallographic and electronic paradigms, as exemplified by our high-pressure (HP) synthesis and exploration of the honeycomb polymorph of ReO3 (P6322). This HP-P6322 polymorph bears a phase transition from P6322 to P63/mmc upon cooling around Tp = 250 K, as evidenced by the evolution of temperature-dependent magnetization (M-T curves), cell dimension, and conductivity initiated by an inherent bifurcation of the oxygen position in the ab plane. Insightful analysis of its band structure positions suggests this HP-P6322 polymorph being a plausible candidate for Dirac semimetal properties. This phase transition evokes anomalies in the temperature-dependent variation of paramagnetism (non-linearity) and a crossover from semiconductor to temperature-independent metal, showing a temperature independent conductivity behavior below ~200 K. Under increasing external pressure, both the Tp and resistance of this HP-polymorph is slightly magnetic-field dependent and undergo a "V"-style evolution (decreasing and then increasing) before becoming pressure independent up to 20.2 GPa. Theoretical calculations pinpoint this anionic disorder as a probable catalyst for the decrement in the conductive efficiency and muted temperature-dependent conductivity response.
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Submitted 28 December, 2023; v1 submitted 31 October, 2023;
originally announced October 2023.
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Berry Curvature and Bulk-Boundary Correspondence from Transport Measurement for Photonic Chern Bands
Authors:
Chao Chen,
Run-Ze Liu,
Jizhou Wu,
Zu-En Su,
Xing Ding,
Jian Qin,
Lin Wang,
Wei-Wei Zhang,
Yu He,
Xi-Lin Wang,
Chao-Yang Lu,
Li Li,
Barry C. Sanders,
Xiong-Jun Liu,
Jian-Wei Pan
Abstract:
Berry curvature is a fundamental element to characterize topological quantum physics, while a full measurement of Berry curvature in momentum space was not reported for topological states. Here we achieve two-dimensional Berry curvature reconstruction in a photonic quantum anomalous Hall system via Hall transport measurement of a momentum-resolved wave packet. Integrating measured Berry curvature…
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Berry curvature is a fundamental element to characterize topological quantum physics, while a full measurement of Berry curvature in momentum space was not reported for topological states. Here we achieve two-dimensional Berry curvature reconstruction in a photonic quantum anomalous Hall system via Hall transport measurement of a momentum-resolved wave packet. Integrating measured Berry curvature over the two-dimensional Brillouin zone, we obtain Chern numbers corresponding to -1 and 0. Further, we identify bulk-boundary correspondence by measuring topology-linked chiral edge states at the boundary. The full topological characterization of photonic Chern bands from Berry curvature, Chern number, and edge transport measurements enables our photonic system to serve as a versatile platform for further in-depth study of novel topological physics.
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Submitted 16 October, 2023;
originally announced October 2023.
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Layer-by-layer phase transformation in Ti$_3$O$_5$ revealed by machine learning molecular dynamics simulations
Authors:
Mingfeng Liu,
Jiantao Wang,
Junwei Hu,
Peitao Liu,
Haiyang Niu,
Xuexi Yan,
Jiangxu Li,
Haile Yan,
Bo Yang,
Yan Sun,
Chunlin Chen,
Georg Kresse,
Liang Zuo,
Xing-Qiu Chen
Abstract:
Reconstructive phase transitions involving breaking and reconstruction of primary chemical bonds are ubiquitous and important for many technological applications. In contrast to displacive phase transitions, the dynamics of reconstructive phase transitions are usually slow due to the large energy barrier. Nevertheless, the reconstructive phase transformation from $β$- to $λ$-Ti$_3$O$_5$ exhibits a…
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Reconstructive phase transitions involving breaking and reconstruction of primary chemical bonds are ubiquitous and important for many technological applications. In contrast to displacive phase transitions, the dynamics of reconstructive phase transitions are usually slow due to the large energy barrier. Nevertheless, the reconstructive phase transformation from $β$- to $λ$-Ti$_3$O$_5$ exhibits an ultrafast and reversible behavior. Despite extensive studies, the underlying microscopic mechanism remains unclear. Here, we discover a kinetically favorable in-plane nucleated layer-by-layer transformation mechanism through metadynamics and large-scale molecular dynamics simulations. This is enabled by developing an efficient machine learning potential with near first-principles accuracy through an on-the-fly active learning method and an advanced sampling technique. Our results reveal that the $β$-$λ$ phase transformation initiates with the formation of two-dimensional nuclei in the $ab$-plane and then proceeds layer-by-layer through a multistep barrier-lowering kinetic process via intermediate metastable phases. Our work not only provides important insight into the ultrafast and reversible nature of the $β$-$λ$ transition, but also presents useful strategies and methods for tackling other complex structural phase transitions.
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Submitted 2 April, 2024; v1 submitted 9 October, 2023;
originally announced October 2023.
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Hyperbolic phonon-polariton electroluminescence in graphene-hBN van der Waals heterostructures
Authors:
Qiushi Guo,
Iliya Esin,
Cheng Li,
Chen Chen,
Song Liu,
James H. Edgar,
Selina Zhou,
Eugene Demler,
Gil Refael,
Fengnian Xia
Abstract:
Phonon-polaritons are electromagnetic waves resulting from the coherent coupling of photons with optical phonons in polar dielectrics. Due to their exceptional ability to confine electric fields to deep subwavelength scales with low loss, they are uniquely poised to enable a suite of applications beyond the reach of conventional photonics, such as sub-diffraction imaging and near-field energy tran…
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Phonon-polaritons are electromagnetic waves resulting from the coherent coupling of photons with optical phonons in polar dielectrics. Due to their exceptional ability to confine electric fields to deep subwavelength scales with low loss, they are uniquely poised to enable a suite of applications beyond the reach of conventional photonics, such as sub-diffraction imaging and near-field energy transfer. The conventional approach to exciting phonon-polaritons through optical methods, however, necessitates costly mid-infrared and terahertz coherent light sources along with near-field scanning probes, and generally leads to low excitation efficiency due to the substantial momentum mismatch between phonon-polaritons and free-space photons. Here, we demonstrate that under proper conditions, phonon-polaritons can be excited all-electrically by flowing charge carriers. Specifically, in hexagonal boron nitride (hBN)/graphene heterostructures, by electrically driving charge carriers in ultra-high-mobility graphene out of equilibrium, we observe bright electroluminescence of hBN's hyperbolic phonon-polaritons (HPhPs) at mid-IR frequencies. The HPhP electroluminescence shows a temperature and carrier density dependence distinct from black-body or super-Planckian thermal emission. Moreover, the carrier density dependence of HPhP electroluminescence spectra reveals that HPhP electroluminescence can arise from both inter-band transition and intra-band Cherenkov radiation of charge carriers in graphene. The HPhP electroluminescence offers fundamentally new avenues for realizing electrically-pumped, tunable mid-IR and THz phonon-polariton lasers, and efficient cooling of electronic devices.
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Submitted 5 October, 2023;
originally announced October 2023.
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Local minima in quantum systems
Authors:
Chi-Fang Chen,
Hsin-Yuan Huang,
John Preskill,
Leo Zhou
Abstract:
Finding ground states of quantum many-body systems is known to be hard for both classical and quantum computers. As a result, when Nature cools a quantum system in a low-temperature thermal bath, the ground state cannot always be found efficiently. Instead, Nature finds a local minimum of the energy. In this work, we study the problem of finding local minima in quantum systems under thermal pertur…
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Finding ground states of quantum many-body systems is known to be hard for both classical and quantum computers. As a result, when Nature cools a quantum system in a low-temperature thermal bath, the ground state cannot always be found efficiently. Instead, Nature finds a local minimum of the energy. In this work, we study the problem of finding local minima in quantum systems under thermal perturbations. While local minima are much easier to find than ground states, we show that finding a local minimum is computationally hard for classical computers, even when the task is to output a single-qubit observable at any local minimum. In contrast, we prove that a quantum computer can always find a local minimum efficiently using a thermal gradient descent algorithm that mimics the cooling process in Nature. To establish the classical hardness of finding local minima, we consider a family of two-dimensional Hamiltonians such that any problem solvable by polynomial-time quantum algorithms can be reduced to finding ground states of these Hamiltonians. We prove that for such Hamiltonians, all local minima are global minima. Therefore, assuming quantum computation is more powerful than classical computation, finding local minima is classically hard and quantumly easy.
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Submitted 28 September, 2023;
originally announced September 2023.
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Anomalous excitonic phase diagram in band-gap-tuned Ta2Ni(Se,S)5
Authors:
Cheng Chen,
Weichen Tang,
Xiang Chen,
Zhibo Kang,
Shuhan Ding,
Kirsty Scott,
Siqi Wang,
Zhenglu Li,
Jacob P. C. Ruff,
Makoto Hashimoto,
Dong-Hui Lu,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
Eduardo H. da Silva Neto,
Robert J. Birgeneau,
Yulin Chen,
Steven G. Louie,
Yao Wang,
Yu He
Abstract:
During a band-gap-tuned semimetal-to-semiconductor transition, Coulomb attraction between electrons and holes can cause spontaneously formed excitons near the zero-band-gap point, or the Lifshitz transition point. This has become an important route to realize bulk excitonic insulators -- an insulating ground state distinct from single-particle band insulators. How this route manifests from weak to…
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During a band-gap-tuned semimetal-to-semiconductor transition, Coulomb attraction between electrons and holes can cause spontaneously formed excitons near the zero-band-gap point, or the Lifshitz transition point. This has become an important route to realize bulk excitonic insulators -- an insulating ground state distinct from single-particle band insulators. How this route manifests from weak to strong coupling is not clear. In this work, using angle-resolved photoemission spectroscopy (ARPES) and high-resolution synchrotron x-ray diffraction (XRD), we investigate the broken symmetry state across the semimetal-to-semiconductor transition in a leading bulk excitonic insulator candidate system Ta2Ni(Se,S)5. A broken symmetry phase is found to be continuously suppressed from the semimetal side to the semiconductor side, contradicting the anticipated maximal excitonic instability around the Lifshitz transition. Bolstered by first-principles and model calculations, we find strong interband electron-phonon coupling to play a crucial role in the enhanced symmetry breaking on the semimetal side of the phase diagram. Our results not only provide insight into the longstanding debate of the nature of intertwined orders in Ta2NiSe5, but also establish a basis for exploring band-gap-tuned structural and electronic instabilities in strongly coupled systems.
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Submitted 13 September, 2023;
originally announced September 2023.
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Orbital-Dependent Electron Correlation in Double-Layer Nickelate La3Ni2O7
Authors:
Jiangang Yang,
Hualei Sun,
Xunwu Hu,
Yuyang Xie,
Taimin Miao,
Hailan Luo,
Hao Chen,
Bo Liang,
Wenpei Zhu,
Gexing Qu,
Cui-Qun Chen,
Mengwu Huo,
Yaobo Huang,
Shenjin Zhang,
Fengfeng Zhang,
Feng Yang,
Zhimin Wang,
Qinjun Peng,
Hanqing Mao,
Guodong Liu,
Zuyan Xu,
Tian Qian,
Dao-Xin Yao,
Meng Wang,
Lin Zhao
, et al. (1 additional authors not shown)
Abstract:
The latest discovery of high temperature superconductivity near 80K in La3Ni2O7 under high pressure has attracted much attention. Many proposals are put forth to understand the origin of superconductivity. The determination of electronic structures is a prerequisite to establish theories to understand superconductivity in nickelates but is still lacking. Here we report our direct measurement of th…
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The latest discovery of high temperature superconductivity near 80K in La3Ni2O7 under high pressure has attracted much attention. Many proposals are put forth to understand the origin of superconductivity. The determination of electronic structures is a prerequisite to establish theories to understand superconductivity in nickelates but is still lacking. Here we report our direct measurement of the electronic structures of La3Ni2O7 by high-resolution angle-resolved photoemmission spectroscopy. The Fermi surface and band structures of La3Ni2O7 are observed and compared with the band structure calculations. A flat band is formed from the Ni-3dz2 orbitals around the zone corner which is 50meV below the Fermi level. Strong electron correlations are revealed which are orbital- and momentum-dependent. Our observations will provide key information to understand the origin of high temperature superconductivity in La3Ni2O7.
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Submitted 3 September, 2023;
originally announced September 2023.