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Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for TCAM, Storage, and In-Memory Computing Applications
Authors:
Paritosh Meihar,
Rowtu Srinu,
Sandip Lashkare,
Ajay Kumar Singh,
Halid Mulaosmanovic,
Veeresh Deshpande,
Stefan Dünkel,
Sven Beyer,
Udayan Ganguly
Abstract:
In-memory computing on a reconfigurable architecture is the emerging field which performs an application-based resource allocation for computational efficiency and energy optimization. In this work, we propose a Ferroelectric MirrorBit-integrated field-programmable reconfigurable memory. We show the conventional 1-Bit FeFET, the MirrorBit, and MirrorBit-based Ternary Content-addressable memory (MC…
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In-memory computing on a reconfigurable architecture is the emerging field which performs an application-based resource allocation for computational efficiency and energy optimization. In this work, we propose a Ferroelectric MirrorBit-integrated field-programmable reconfigurable memory. We show the conventional 1-Bit FeFET, the MirrorBit, and MirrorBit-based Ternary Content-addressable memory (MCAM or MirrorBit-based TCAM) within the same field-programmable array. Apart from the conventional uniform Up and Down polarization states, the additional states in the MirrorBit are programmed by applying a non-uniform electric field along the transverse direction, which produces a gradient in the polarization and the conduction band energy. This creates two additional states, thereby, creating a total of 4 states or 2-bit of information. The gradient in the conduction band resembles a Schottky barrier (Schottky diode), whose orientation can be configured by applying an appropriate field. The TCAM operation is demonstrated using the MirrorBit-based diode on the reconfigurable array. The reconfigurable array architecture can switch from AND-type to NOR-type and vice-versa. The AND-type array is appropriate for programming the conventional bit and the MirrorBit. The MirrorBit-based Schottky diode in the NOR-array resembles a crossbar structure, which is appropriate for diode-based CAM operation. Our proposed memory system can enable fast write via 1-bit FeFET, the dense data storage capability by Mirror-bit technology and the fast search capability of the MCAM. Further, the dual configurability enables power, area and speed optimization making the reconfigurable Fe-Mirrorbit memory a compelling solution for In-memory and associative computing.
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Submitted 10 July, 2023;
originally announced July 2023.
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FeFET-based MirrorBit cell for High-density NVM storage
Authors:
Paritosh Meihar,
Rowtu Srinu,
Vivek Saraswat,
Sandip Lashkare,
Halid Mulaosmanovic,
Ajay Kumar Singh,
Stefan Dünkel,
Sven Beyer,
Udayan Ganguly
Abstract:
HfO2-based Ferroelectric field-effect transistor (FeFET) has become a center of attraction for non-volatile memory applications because of their low power, fast switching speed, high scalability, and CMOS compatibility. In this work, we show an n-channel FeFET-based Multibit memory, termed MirrorBit, which effectively doubles the chip density via programming the gradient ferroelectric polarization…
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HfO2-based Ferroelectric field-effect transistor (FeFET) has become a center of attraction for non-volatile memory applications because of their low power, fast switching speed, high scalability, and CMOS compatibility. In this work, we show an n-channel FeFET-based Multibit memory, termed MirrorBit, which effectively doubles the chip density via programming the gradient ferroelectric polarizations in the gate using an appropriate biasing scheme. We have experimentally demonstrated MirrorBit on GlobalFoundries HfO2-based FeFET devices fabricated at 28 nm bulk HKMG CMOS technology. Retention of MirrorBit states has been shown up to $10^5$ s at different temperatures. Also, the endurance is found to be more than $10^3$ cycles. A TCAD simulation is also presented to explain the origin and working of MirrorBit states based on the FeFET model calibrated using the GlobalFoundries FeFET device. We have also proposed the array-level implementation and sensing methodology of the MirrorBit memory. Thus, we have converted 1-bit FeFET into 2-bit FeFET using a particular programming scheme in existing FeFET, without needing any notable fabrication process alteration, to double the chip density for high-density non-volatile memory storage.
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Submitted 14 September, 2023; v1 submitted 6 April, 2023;
originally announced April 2023.
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India's Rise in Nanoelectronics Research
Authors:
Udayan Ganguly,
Sandip Lashkare,
Swaroop Ganguly
Abstract:
Modern semiconductors innovation has a strong relation to scale and skill. While India has a significant demand for semiconductors, it has a daunting challenge to create a semiconductor ecosystem. Yet, India has quietly come a long way. Starting with Centers of Excellence in Nanoelectronics (CENs) initiated in 2006 and broad science and technology funding, India has transformed its nanoelectronics…
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Modern semiconductors innovation has a strong relation to scale and skill. While India has a significant demand for semiconductors, it has a daunting challenge to create a semiconductor ecosystem. Yet, India has quietly come a long way. Starting with Centers of Excellence in Nanoelectronics (CENs) initiated in 2006 and broad science and technology funding, India has transformed its nanoelectronics research ecosystem. From negligible contributions as late as 2011, India has risen to be a top contributor to IEEE Electron Devices journals today. Our study presents important observations in terms of ecosystem development. First, there is a 6 year incubation time from infrastructure initiation to first papers. Then, 4 more years to become globally competitive. Second, growth in experimental research is essential along with modeling & simulations. Finally, the aspirational goals of translational research to contribute to the global technology roadmap requires cutting-edge manufacturing infrastructure & ecosystem access, which still needs development. The learning informs a call to action for the research ecosystem i.e. academia, industry, and policy-makers. First, sustain and amplify successful strategies of national research infrastructure & funding growth. Second, enhance international collaborations to add further scale & infrastructure to R&D. Finally, strengthen the industry-academia-policy consortium approach to transform to an innovation-based economy. Ultimately, the electron devices community is entering an exciting phase where Beyond Moore offers open opportunities in materials, devices to systems, and algorithms. India must build on its success to play a significant role in this new world of disruptive innovation.
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Submitted 30 November, 2020; v1 submitted 23 November, 2020;
originally announced November 2020.
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Temperature Dependence of Volatile Current shoot-up in PrMnO3 based Selector-less RRAM
Authors:
S. Lashkare,
A. Bhat,
U. Ganguly
Abstract:
PrMnO3 (PMO) based Resistance Random Access Memory (RRAM) has recently been considered for selector-less RRAM and neuromorphic computing applications by utilizing its current shoot-up. This current shoot-up in the PMO device is attributed to the thermal runaway in the device. Hence, the understanding of the ambient temperature dependence on the current shoot-up of the PMO device is essential for t…
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PrMnO3 (PMO) based Resistance Random Access Memory (RRAM) has recently been considered for selector-less RRAM and neuromorphic computing applications by utilizing its current shoot-up. This current shoot-up in the PMO device is attributed to the thermal runaway in the device. Hence, the understanding of the ambient temperature dependence on the current shoot-up of the PMO device is essential for the various applications that utilize the negative differential resistance (NDR). In this paper, we characterize the ambient thermal dependence of dc IV, accompanied by the development of analytical modeling. First, the temperature-dependent current-voltage characteristic and shift in the threshold voltage of the PMO device are shown experimentally. Second, a Joule heating based thermal feedback model coupled with current transport by space charge limited current (SCLC) is developed to explain the experimentally observed NDR region. Finally, the model successfully predicts device behavior over a range of experimental ambient temperatures. As an alternative to TCAD, such a compact and accurate dc model sets up a platform to enable understanding, design with device and systems-level simulations of memory and neuromorphic applications.
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Submitted 12 December, 2019;
originally announced February 2020.
