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Beam test of a baseline vertex detector prototype for CEPC
Authors:
Shuqi Li,
Tianya Wu,
Xinhui Huang,
Jia Zhou,
Ziyue Yan,
Wei Wang,
Hao Zeng,
Yiming Hu,
Xiaoxu Zhang,
Zhijun Liang,
Wei Wei,
Ying Zhang,
Xiaomin Wei,
Lei Zhang,
Ming Qi,
Jun Hu,
Jinyu Fu,
Hongyu Zhang,
Gang Li,
Linghui Wu,
Mingyi Dong,
Xiaoting Li,
Raimon Casanova,
Liang Zhang,
Jianing Dong
, et al. (5 additional authors not shown)
Abstract:
The Circular Electron Positron Collider (CEPC) has been proposed to enable more thorough and precise measurements of the properties of Higgs, W, and Z bosons, as well as to search for new physics. In response to the stringent performance requirements of the vertex detector for the CEPC, a baseline vertex detector prototype was tested and characterized for the first time using a 6 GeV electron beam…
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The Circular Electron Positron Collider (CEPC) has been proposed to enable more thorough and precise measurements of the properties of Higgs, W, and Z bosons, as well as to search for new physics. In response to the stringent performance requirements of the vertex detector for the CEPC, a baseline vertex detector prototype was tested and characterized for the first time using a 6 GeV electron beam at DESY II Test Beam Line 21. The baseline vertex detector prototype is designed with a cylindrical barrel structure that contains six double-sided detector modules (ladders). Each side of the ladder includes TaichuPix-3 sensors based on Monolithic Active Pixel Sensor (MAPS) technology, a flexible printed circuit, and a carbon fiber support structure. Additionally, the readout electronics and the Data Acquisition system were also examined during this beam test. The performance of the prototype was evaluated using an electron beam that passed through six ladders in a perpendicular direction. The offline data analysis indicates a spatial resolution of about 5 um, with detection efficiency exceeding 99 % and an impact parameter resolution of about 5.1 um. These promising results from this baseline vertex detector prototype mark a significant step toward realizing the optimal vertex detector for the CEPC.
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Submitted 1 April, 2024;
originally announced April 2024.
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Beam test of a 180 nm CMOS Pixel Sensor for the CEPC vertex detector
Authors:
Tianya Wu,
Shuqi Li,
Wei Wang,
Jia Zhou,
Ziyue Yan,
Yiming Hu,
Xiaoxu Zhang,
Zhijun Liang,
Wei Wei,
Ying Zhang,
Xiaomin Wei,
Xinhui Huang,
Lei Zhang,
Ming Qi,
Hao Zeng,
Xuewei Jia,
Jun Hu,
Jinyu Fu,
Hongyu Zhang,
Gang Li,
Linghui Wu,
Mingyi Dong,
Xiaoting Li,
Raimon Casanova,
Liang Zhang
, et al. (6 additional authors not shown)
Abstract:
The proposed Circular Electron Positron Collider (CEPC) imposes new challenges for the vertex detector in terms of pixel size and material budget. A Monolithic Active Pixel Sensor (MAPS) prototype called TaichuPix, based on a column drain readout architecture, has been developed to address the need for high spatial resolution. In order to evaluate the performance of the TaichuPix-3 chips, a beam t…
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The proposed Circular Electron Positron Collider (CEPC) imposes new challenges for the vertex detector in terms of pixel size and material budget. A Monolithic Active Pixel Sensor (MAPS) prototype called TaichuPix, based on a column drain readout architecture, has been developed to address the need for high spatial resolution. In order to evaluate the performance of the TaichuPix-3 chips, a beam test was carried out at DESY II TB21 in December 2022. Meanwhile, the Data Acquisition (DAQ) for a muti-plane configuration was tested during the beam test. This work presents the characterization of the TaichuPix-3 chips with two different processes, including cluster size, spatial resolution, and detection efficiency. The analysis results indicate the spatial resolution better than 5 $μm$ and the detection efficiency exceeds 99.5 % for both TaichuPix-3 chips with the two different processes.
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Submitted 10 November, 2023;
originally announced November 2023.
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Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications
Authors:
S. Terzo,
M. Benoit,
E. Cavallaro,
R. Casanova,
F. A. Di Bello,
F. Förster,
S. Grinstein,
G. Iacobucci,
I. Perić,
C. Puigdengoles,
M. Vicente Barrero Pinto,
E. Vilella Figueras
Abstract:
Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when large areas to be covered and material budget are concerned. This is the case of the outermost pixel layers of the future ATLAS tracking detector for the HL-LHC.…
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Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when large areas to be covered and material budget are concerned. This is the case of the outermost pixel layers of the future ATLAS tracking detector for the HL-LHC. For experiments at hadron colliders, radiation hardness is a key requirement which is not fulfilled by standard CMOS sensor designs that collect charge by diffusion. This issue has been addressed by depleted active pixel sensors in which electronics are embedded into a large deep implantation ensuring uniform charge collection by drift. Very first small prototypes of hybrid depleted active pixel sensors have already shown a radiation hardness compatible with the ATLAS requirements. Nevertheless, to compete with the present hybrid solutions a further reduction in costs achievable by a fully monolithic design is desirable. The H35DEMO is a large electrode full reticle demonstrator chip produced in AMS 350 nm HV-CMOS technology by the collaboration of Karlsruher Institut für Technologie (KIT), Institut de Física d'Altes Energies (IFAE), University of Liverpool and University of Geneva. It includes two large monolithic pixel matrices which can be operated standalone. One of these two matrices has been characterised at beam test before and after irradiation with protons and neutrons. Results demonstrated the feasibility of producing radiation hard large area fully monolithic pixel sensors in HV-CMOS technology. H35DEMO chips with a substrate resistivity of 200$Ω$ cm irradiated with neutrons showed a radiation hardness up to a fluence of $10^{15}$n$_{eq}$cm$^{-2}$ with a hit efficiency of about 99% and a noise occupancy lower than $10^{-6}$ hits in a LHC bunch crossing of 25ns at 150V.
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Submitted 30 January, 2019; v1 submitted 19 November, 2018;
originally announced November 2018.
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Characterisation of novel prototypes of monolithic HV-CMOS pixel detectors for high energy physics experiments
Authors:
Stefano Terzo,
Emanuele Cavallaro,
Raimon Casanova,
Francesco Di Bello,
Fabian Förster,
Sebastian Grinstein,
Ivan Períc,
Carles Puigdengoles,
Branislav Ristic,
Mateus Vicente Barrero Pinto,
Eva Vilella
Abstract:
An upgrade of the ATLAS experiment for the High Luminosity phase of LHC is planned for 2024 and foresees the replacement of the present Inner Detector (ID) with a new Inner Tracker (ITk) completely made of silicon devices. Depleted active pixel sensors built with the High Voltage CMOS (HV-CMOS) technology are investigated as an option to cover large areas in the outermost layers of the pixel detec…
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An upgrade of the ATLAS experiment for the High Luminosity phase of LHC is planned for 2024 and foresees the replacement of the present Inner Detector (ID) with a new Inner Tracker (ITk) completely made of silicon devices. Depleted active pixel sensors built with the High Voltage CMOS (HV-CMOS) technology are investigated as an option to cover large areas in the outermost layers of the pixel detector and are especially interesting for the development of monolithic devices which will reduce the production costs and the material budget with respect to the present hybrid assemblies. For this purpose the H35DEMO, a large area HV-CMOS demonstrator chip, was designed by KIT, IFAE and University of Liverpool, and produced in AMS 350 nm CMOS technology. It consists of four pixel matrices and additional test structures. Two of the matrices include amplifiers and discriminator stages and are thus designed to be operated as monolithic detectors. In these devices the signal is mainly produced by charge drift in a small depleted volume obtained by applying a bias voltage of the order of 100 V. Moreover, to enhance the radiation hardness of the chip, this technology allows to enclose the electronics in the same deep N-WELLs which are also used as collecting electrodes. In this contribution the characterisation of H35DEMO chips and results of the very first beam test measurements of the monolithic CMOS matrices with high energetic pions at CERN SPS will be presented.
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Submitted 15 May, 2017;
originally announced May 2017.
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Studies of irradiated AMS H35 CMOS detectors for the ATLAS tracker upgrade
Authors:
Emanuele Cavallaro,
Raimon Casanova,
Fabian Förster,
Sebastian Grinstein,
Jörn Lange,
Gregor Kramberger,
Igor Mandić,
Carles Puigdengoles,
Stefano Terzo
Abstract:
Silicon detectors based on the HV-CMOS technology are being investigated as possible candidate for the outer layers of the ATLAS pixel detector for the High Luminosity LHC. In this framework the H35Demo ASIC has been produced in the 350 nm AMS technology (H35). The H35Demo chip has a large area ($18.49 \times 24.40 \, \mathrm{mm^2}$) and includes four different pixel matrices and three test struct…
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Silicon detectors based on the HV-CMOS technology are being investigated as possible candidate for the outer layers of the ATLAS pixel detector for the High Luminosity LHC. In this framework the H35Demo ASIC has been produced in the 350 nm AMS technology (H35). The H35Demo chip has a large area ($18.49 \times 24.40 \, \mathrm{mm^2}$) and includes four different pixel matrices and three test structures. In this paper the radiation hardness properties, in particular the evolution of the depletion region with fluence is studied using edge-TCT on test structures. Measurements on the test structures from chips with different substrate resistivity are shown for non irradiated and irradiated devices up to a cumulative fluence of $2 \cdot 10^{15} \, \mathrm{1\,MeV\, n_{eq} / cm^{2}}$.
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Submitted 9 January, 2017; v1 submitted 15 November, 2016;
originally announced November 2016.
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DEPFET active pixel detectors for a future linear $e^+e^-$ collider
Authors:
O. Alonso,
R. Casanova,
A. Dieguez,
J. Dingfelder,
T. Hemperek,
T. Kishishita amd T. Kleinohl,
M. Koch,
H. Krueger,
M. Lemarenko,
F. Luetticke,
C. Marinas,
M. Schnell,
N. Wermes,
A. Campbell,
T. Ferber,
C. Kleinwort,
C. Niebuhr,
Y. Soloviev,
M. Steder,
R. Volkenborn,
S. Yaschenko,
P. Fischer,
C. Kreidl,
I. Peric,
J. Knopf
, et al. (62 additional authors not shown)
Abstract:
The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a senso…
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The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 $\mathrm{\mathbf{μm}}$. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling and services. In this paper the status of DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear $\mathbf{e^+ e^-}$ collider.
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Submitted 10 December, 2012;
originally announced December 2012.
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Silicon Tracking DAQ
Authors:
Aurore Savoy-Navarro,
Alex Charpy,
Catalin Ciobanu,
Jacques David,
Marc Dhellot,
Jean F. Genat,
Th. Hung Pham,
Rachid Sefri,
Raimon Casanova,
Albert Comerma,
Angel Dieguez,
David Gascon
Abstract:
Some preliminary thoughts on how to design and develop the DAQ architecture for the Silicon tracking system at the future Linear electron positron collider, are briefly presented here. The proposed structure includes three DAQ levels. The first level is based on a high level processing mix-mode ASIC sitting on the detector. The second level still on the detector is a DSP like interface that will…
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Some preliminary thoughts on how to design and develop the DAQ architecture for the Silicon tracking system at the future Linear electron positron collider, are briefly presented here. The proposed structure includes three DAQ levels. The first level is based on a high level processing mix-mode ASIC sitting on the detector. The second level still on the detector is a DSP like interface that will send the processed data to the general DAQ system. Several novel technological aspects are part of this development. The role of the ongoing test beam activities with detector prototypes as training camp is emphasized.
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Submitted 28 March, 2009;
originally announced March 2009.
