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Performance of the MALTA Telescope
Authors:
Milou van Rijnbach,
Giuliano Gustavino,
Phil Allport,
Igancio Asensi,
Dumitru Vlad Berlea,
Daniela Bortoletto,
Craig Buttar,
Edoardo Charbon,
Florian Dachs,
Valerio Dao,
Dominik Dobrijevic,
Leyre Flores Sanz de Acedo,
Andrea Gabrielli,
Martin Gazi,
Laura Gonella,
Vicente Gonzalez,
Stefan Guindon,
Matt LeBlanc,
Heinz Pernegger,
Francesco Piro,
Petra Riedler,
Heidi Sandaker,
Abhishek Sharma,
Carlos Solans Sanchez,
Walter Snoeys
, et al. (5 additional authors not shown)
Abstract:
MALTA is part of the Depleted Monolithic Active Pixel sensors designed in Tower 180nm CMOS imaging technology. A custom telescope with six MALTA planes has been developed for test beam campaigns at SPS, CERN, with the ability to host several devices under test. The telescope system has a dedicated custom readout, online monitoring integrated into DAQ with realtime hit map, time distribution and ev…
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MALTA is part of the Depleted Monolithic Active Pixel sensors designed in Tower 180nm CMOS imaging technology. A custom telescope with six MALTA planes has been developed for test beam campaigns at SPS, CERN, with the ability to host several devices under test. The telescope system has a dedicated custom readout, online monitoring integrated into DAQ with realtime hit map, time distribution and event hit multiplicity. It hosts a dedicated fully configurable trigger system enabling to trigger on coincidence between telescope planes and timing reference from a scintillator. The excellent time resolution performance allows for fast track reconstruction, due to the possibility to retain a low hit multiplicity per event which reduces the combinatorics. This paper reviews the architecture of the system and its performance during the 2021 and 2022 test beam campaign at the SPS North Area.
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Submitted 21 April, 2023; v1 submitted 3 April, 2023;
originally announced April 2023.
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ATHENA Detector Proposal -- A Totally Hermetic Electron Nucleus Apparatus proposed for IP6 at the Electron-Ion Collider
Authors:
ATHENA Collaboration,
J. Adam,
L. Adamczyk,
N. Agrawal,
C. Aidala,
W. Akers,
M. Alekseev,
M. M. Allen,
F. Ameli,
A. Angerami,
P. Antonioli,
N. J. Apadula,
A. Aprahamian,
W. Armstrong,
M. Arratia,
J. R. Arrington,
A. Asaturyan,
E. C. Aschenauer,
K. Augsten,
S. Aune,
K. Bailey,
C. Baldanza,
M. Bansal,
F. Barbosa,
L. Barion
, et al. (415 additional authors not shown)
Abstract:
ATHENA has been designed as a general purpose detector capable of delivering the full scientific scope of the Electron-Ion Collider. Careful technology choices provide fine tracking and momentum resolution, high performance electromagnetic and hadronic calorimetry, hadron identification over a wide kinematic range, and near-complete hermeticity. This article describes the detector design and its e…
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ATHENA has been designed as a general purpose detector capable of delivering the full scientific scope of the Electron-Ion Collider. Careful technology choices provide fine tracking and momentum resolution, high performance electromagnetic and hadronic calorimetry, hadron identification over a wide kinematic range, and near-complete hermeticity. This article describes the detector design and its expected performance in the most relevant physics channels. It includes an evaluation of detector technology choices, the technical challenges to realizing the detector and the R&D required to meet those challenges.
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Submitted 13 October, 2022;
originally announced October 2022.
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Timing performance of radiation hard MALTA monolithic Pixel sensors
Authors:
G. Gustavino,
P. Allport,
I. Asensi,
D. V. Berlea,
D. Bortoletto,
C. Buttar,
F. Dachs,
V. Dao,
H. Denizli,
D. Dobrijevic,
L. Flores,
A. Gabrielli,
L. Gonella,
V. González,
M. LeBlanc,
K. Oyulmaz,
H. Pernegger,
F. Piro,
P. Riedler,
H. Sandaker,
C. Solans,
W. Snoeys,
T. Suligoj,
M. van Rijnbach,
A. Sharma
, et al. (4 additional authors not shown)
Abstract:
The MALTA family of Depleted Monolithic Active Pixel Sensor (DMAPS) produced in Tower 180 nm CMOS technology targets radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness up to $2 \times 10^{15}~1~\text{MeV}~\text{n}_{eq}/\text{cm}^2$ and time resolution below 2 ns, with uniform charge collection efficien…
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The MALTA family of Depleted Monolithic Active Pixel Sensor (DMAPS) produced in Tower 180 nm CMOS technology targets radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness up to $2 \times 10^{15}~1~\text{MeV}~\text{n}_{eq}/\text{cm}^2$ and time resolution below 2 ns, with uniform charge collection efficiency across the Pixel of size $36.4 \times 36.4~μ\text{m}^2$ with a $3~μ\text{m}^2$ electrode size. The MALTA2 demonstrator produced in 2021 on high-resistivity epitaxial silicon and on Czochralski substrates implements a new cascoded front-end that reduces the RTS noise and has a higher gain. This contribution shows results from MALTA2 on timing resolution at the nanosecond level from the CERN SPS test-beam campaign of 2021.
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Submitted 31 January, 2023; v1 submitted 29 September, 2022;
originally announced September 2022.
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Recent results with radiation-tolerant TowerJazz 180 nm MALTA Sensors
Authors:
Matt LeBlanc,
Phil Allport,
Igancio Asensi,
Dumitru-Vlad Berlea,
Daniela Bortoletto,
Craig Buttar,
Florian Dachs,
Valerio Dao,
Haluk Denizli,
Dominik Dobrijevic,
Leyre Flores,
Andrea Gabrielli,
Laura Gonella,
Vicente González,
Giuliano Gustavino,
Kaan Oyulmaz,
Heinz Pernegger,
Francesco Piro,
Petra Riedler,
Heidi Sandaker,
Carlos Solans,
Walter Snoeys,
Tomislav Suligoj,
Milou van Rijnbach,
Abhishek Sharma
, et al. (4 additional authors not shown)
Abstract:
To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation-hard, monolithic CMOS sensors. We have designed, manufactured and tested the MALTA series of sensors, which are DMAPS in the 180 n…
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To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation-hard, monolithic CMOS sensors. We have designed, manufactured and tested the MALTA series of sensors, which are DMAPS in the 180 nm TowerJazz CMOS imaging technology. MALTA have a pixel pitch well below current hybrid pixel detectors, high time resolution (< 2 ns) and excellent charge collection efficiency across pixel geometries. These sensors have a total silicon thickness of between 50-300 $μ$m, implying reduced material budgets and multiple scattering rates for future detectors which utilize such technology. Furthermore, their monolithic design bypasses the costly stage of bump-bonding in hybrid sensors and can substantially reduce detector costs. This contribution presents the latest results from characterization studies of the MALTA2 sensors, including results demonstrating the radiation tolerance of these sensors.
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Submitted 9 September, 2022;
originally announced September 2022.
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Science Requirements and Detector Concepts for the Electron-Ion Collider: EIC Yellow Report
Authors:
R. Abdul Khalek,
A. Accardi,
J. Adam,
D. Adamiak,
W. Akers,
M. Albaladejo,
A. Al-bataineh,
M. G. Alexeev,
F. Ameli,
P. Antonioli,
N. Armesto,
W. R. Armstrong,
M. Arratia,
J. Arrington,
A. Asaturyan,
M. Asai,
E. C. Aschenauer,
S. Aune,
H. Avagyan,
C. Ayerbe Gayoso,
B. Azmoun,
A. Bacchetta,
M. D. Baker,
F. Barbosa,
L. Barion
, et al. (390 additional authors not shown)
Abstract:
This report describes the physics case, the resulting detector requirements, and the evolving detector concepts for the experimental program at the Electron-Ion Collider (EIC). The EIC will be a powerful new high-luminosity facility in the United States with the capability to collide high-energy electron beams with high-energy proton and ion beams, providing access to those regions in the nucleon…
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This report describes the physics case, the resulting detector requirements, and the evolving detector concepts for the experimental program at the Electron-Ion Collider (EIC). The EIC will be a powerful new high-luminosity facility in the United States with the capability to collide high-energy electron beams with high-energy proton and ion beams, providing access to those regions in the nucleon and nuclei where their structure is dominated by gluons. Moreover, polarized beams in the EIC will give unprecedented access to the spatial and spin structure of the proton, neutron, and light ions. The studies leading to this document were commissioned and organized by the EIC User Group with the objective of advancing the state and detail of the physics program and developing detector concepts that meet the emerging requirements in preparation for the realization of the EIC. The effort aims to provide the basis for further development of concepts for experimental equipment best suited for the science needs, including the importance of two complementary detectors and interaction regions.
This report consists of three volumes. Volume I is an executive summary of our findings and developed concepts. In Volume II we describe studies of a wide range of physics measurements and the emerging requirements on detector acceptance and performance. Volume III discusses general-purpose detector concepts and the underlying technologies to meet the physics requirements. These considerations will form the basis for a world-class experimental program that aims to increase our understanding of the fundamental structure of all visible matter
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Submitted 26 October, 2021; v1 submitted 8 March, 2021;
originally announced March 2021.
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The ABC130 barrel module prototyping programme for the ATLAS strip tracker
Authors:
Luise Poley,
Craig Sawyer,
Sagar Addepalli,
Anthony Affolder,
Bruno Allongue,
Phil Allport,
Eric Anderssen,
Francis Anghinolfi,
Jean-François Arguin,
Jan-Hendrik Arling,
Olivier Arnaez,
Nedaa Alexandra Asbah,
Joe Ashby,
Eleni Myrto Asimakopoulou,
Naim Bora Atlay,
Ludwig Bartsch,
Matthew J. Basso,
James Beacham,
Scott L. Beaupré,
Graham Beck,
Carl Beichert,
Laura Bergsten,
Jose Bernabeu,
Prajita Bhattarai,
Ingo Bloch
, et al. (224 additional authors not shown)
Abstract:
For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000…
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For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototyping programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-25) and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototyping program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests.
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Submitted 7 September, 2020;
originally announced September 2020.
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Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC
Authors:
M. Dyndal,
V. Dao,
P. Allport,
I. Asensi Tortajada,
M. Barbero,
S. Bhat,
D. Bortoletto,
I. Berdalovic,
C. Bespin,
C. Buttar,
I. Caicedo,
R. Cardella,
F. Dachs,
Y. Degerli,
H. Denizli,
L. Flores Sanz de Acedo,
P. Freeman,
L. Gonella,
A. Habib,
T. Hemperek,
T. Hirono,
B. Hiti,
T. Kugathasan,
I. Mandić,
D. Maneuski
, et al. (19 additional authors not shown)
Abstract:
Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silico…
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Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$.
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Submitted 14 December, 2019; v1 submitted 26 September, 2019;
originally announced September 2019.
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Experimental Determination of Proton Hardness Factors at Several Irradiation Facilities
Authors:
P. Allport,
F. Bogelspacher,
K. Bruce,
R. Canavan,
A. Dierlamm,
L. Gonella,
P. Knights,
I. Mateu,
M. Moll,
K. Nikolopoulos,
B. Phoenix,
T. Price,
L. Ram,
F. Ravotti,
C. Simpson-Allsop,
C. Wood
Abstract:
The scheduled High Luminosity upgrade of the CERN Large Hadron Collider presents new challenges in terms of radiation hardness. As a consequence, campaigns to qualify the radiation hardness of detector sensors and components are undertaken worldwide. The effects of irradiation with beams of different particle species and energy, aiming to assess displacement damage in semiconductor devices, are co…
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The scheduled High Luminosity upgrade of the CERN Large Hadron Collider presents new challenges in terms of radiation hardness. As a consequence, campaigns to qualify the radiation hardness of detector sensors and components are undertaken worldwide. The effects of irradiation with beams of different particle species and energy, aiming to assess displacement damage in semiconductor devices, are communicated in terms of the equivalent 1 MeV neutron fluence, using the hardness factor for the conversion. In this work, the hardness factors for protons at three different kinetic energies have been measured by analysing the I-V and C-V characteristics of reverse biased diodes, pre- and post-irradiation. The sensors were irradiated at the MC40 Cyclotron of the University of Birmingham, the cyclotron at the Karlsruhe Institute of Technology, and the IRRAD proton facility at CERN, with the respective measured proton hardness factors being: 2.1 +/- 0.5 for 24 MeV, 2.2 +/- 0.4 for 23 MeV, and 0.62 +/- 0.04 for 23 GeV. The hardness factors currently used in these three facilities are in agreement with the presented measurements.
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Submitted 12 November, 2019; v1 submitted 8 August, 2019;
originally announced August 2019.
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Production and Integration of the ATLAS Insertable B-Layer
Authors:
B. Abbott,
J. Albert,
F. Alberti,
M. Alex,
G. Alimonti,
S. Alkire,
P. Allport,
S. Altenheiner,
L. Ancu,
E. Anderssen,
A. Andreani,
A. Andreazza,
B. Axen,
J. Arguin,
M. Backhaus,
G. Balbi,
J. Ballansat,
M. Barbero,
G. Barbier,
A. Bassalat,
R. Bates,
P. Baudin,
M. Battaglia,
T. Beau,
R. Beccherle
, et al. (352 additional authors not shown)
Abstract:
During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and i…
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During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realised following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. This paper reports on the IBL construction and integration prior to its operation in the ATLAS detector.
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Submitted 6 June, 2018; v1 submitted 2 March, 2018;
originally announced March 2018.
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Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line
Authors:
D. -L. Pohl,
T. Hemperek,
I. Caicedo,
L. Gonella,
F. Hügging,
J. Janssen,
H. Krüger,
A. Macchiolo,
N. Owtscharenko,
L. Vigani,
N. Wermes
Abstract:
Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-…
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Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 $\times$ 10$^{15}$ n$_{\rm eq}$ cm$^{-2}$. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.
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Submitted 2 March, 2017; v1 submitted 16 February, 2017;
originally announced February 2017.
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Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade
Authors:
Piotr Rymaszewski,
Marlon Barbero,
Patrick Breugnon,
Stépahnie Godiot,
Laura Gonella,
Tomasz Hemperek,
Toko Hirono,
Fabian Hügging,
Hans Krüger,
Jian Liu,
Patrick Pangaud,
Ivan Peric,
Alexandre Rozanov,
Anqing Wang,
Norbert Wermes
Abstract:
The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prot…
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The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.
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Submitted 4 January, 2016;
originally announced January 2016.
