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Tackling Data Scarcity with Transfer Learning: A Case Study of Thickness Characterization from Optical Spectra of Perovskite Thin Films
Authors:
Siyu Isaac Parker Tian,
Zekun Ren,
Selvaraj Venkataraj,
Yuanhang Cheng,
Daniil Bash,
Felipe Oviedo,
J. Senthilnath,
Vijila Chellappan,
Yee-Fun Lim,
Armin G. Aberle,
Benjamin P MacLeod,
Fraser G. L. Parlane,
Curtis P. Berlinguette,
Qianxiao Li,
Tonio Buonassisi,
Zhe Liu
Abstract:
Transfer learning increasingly becomes an important tool in handling data scarcity often encountered in machine learning. In the application of high-throughput thickness as a downstream process of the high-throughput optimization of optoelectronic thin films with autonomous workflows, data scarcity occurs especially for new materials. To achieve high-throughput thickness characterization, we propo…
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Transfer learning increasingly becomes an important tool in handling data scarcity often encountered in machine learning. In the application of high-throughput thickness as a downstream process of the high-throughput optimization of optoelectronic thin films with autonomous workflows, data scarcity occurs especially for new materials. To achieve high-throughput thickness characterization, we propose a machine learning model called thicknessML that predicts thickness from UV-Vis spectrophotometry input and an overarching transfer learning workflow. We demonstrate the transfer learning workflow from generic source domain of generic band-gapped materials to specific target domain of perovskite materials, where the target domain data only come from limited number (18) of refractive indices from literature. The target domain can be easily extended to other material classes with a few literature data. Defining thickness prediction accuracy to be within-10% deviation, thicknessML achieves 92.2% (with a deviation of 3.6%) accuracy with transfer learning compared to 81.8% (with a deviation of 3.6%) 11.7% without (lower mean and larger standard deviation). Experimental validation on six deposited perovskite films also corroborates the efficacy of the proposed workflow by yielding a 10.5% mean absolute percentage error (MAPE).
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Submitted 20 December, 2022; v1 submitted 14 June, 2022;
originally announced July 2022.
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An invertible crystallographic representation for general inverse design of inorganic crystals with targeted properties
Authors:
Zekun Ren,
Siyu Isaac Parker Tian,
Juhwan Noh,
Felipe Oviedo,
Guangzong Xing,
Jiali Li,
Qiaohao Liang,
Ruiming Zhu,
Armin G. Aberle,
Shijing Sun,
Xiaonan Wang,
Yi Liu,
Qianxiao Li,
Senthilnath Jayavelu,
Kedar Hippalgaonkar,
Yousung Jung,
Tonio Buonassisi
Abstract:
Realizing general inverse design could greatly accelerate the discovery of new materials with user-defined properties. However, state-of-the-art generative models tend to be limited to a specific composition or crystal structure. Herein, we present a framework capable of general inverse design (not limited to a given set of elements or crystal structures), featuring a generalized invertible repres…
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Realizing general inverse design could greatly accelerate the discovery of new materials with user-defined properties. However, state-of-the-art generative models tend to be limited to a specific composition or crystal structure. Herein, we present a framework capable of general inverse design (not limited to a given set of elements or crystal structures), featuring a generalized invertible representation that encodes crystals in both real and reciprocal space, and a property-structured latent space from a variational autoencoder (VAE). In three design cases, the framework generates 142 new crystals with user-defined formation energies, bandgap, thermoelectric (TE) power factor, and combinations thereof. These generated crystals, absent in the training database, are validated by first-principles calculations. The success rates (number of first-principles-validated target-satisfying crystals/number of designed crystals) ranges between 7.1% and 38.9%. These results represent a significant step toward property-driven general inverse design using generative models, although practical challenges remain when coupled with experimental synthesis.
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Submitted 15 December, 2021; v1 submitted 15 May, 2020;
originally announced May 2020.
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Embedding Physics Domain Knowledge into a Bayesian Network Enables Layer-by-Layer Process Innovation for Photovoltaics
Authors:
Zekun Ren,
Felipe Oviedo,
Muang Thway,
Siyu I. P. Tian,
Yue Wang,
Hansong Xue,
Jose Dario Perea,
Mariya Layurova,
Thomas Heumueller,
Erik Birgersson,
Armin Aberle,
Christoph J. Brabec,
Rolf Stangl,
Shijing Sun,
Qianxiao Li,
Fen Lin,
Ian Marius Peters,
Tonio Buonassisi
Abstract:
Process optimization of photovoltaic devices is a time-intensive, trial and error endeavor, without full transparency of the underlying physics, and with user-imposed constraints that may or may not lead to a global optimum. Herein, we demonstrate that embedding physics domain knowledge into a Bayesian network enables an optimization approach that identifies the root cause(s) of underperformance w…
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Process optimization of photovoltaic devices is a time-intensive, trial and error endeavor, without full transparency of the underlying physics, and with user-imposed constraints that may or may not lead to a global optimum. Herein, we demonstrate that embedding physics domain knowledge into a Bayesian network enables an optimization approach that identifies the root cause(s) of underperformance with layer by-layer resolution and reveals alternative optimal process windows beyond global black-box optimization. Our Bayesian-network approach links process conditions to materials descriptors (bulk and interface properties, e.g., bulk lifetime, doping, and surface recombination) and device performance parameters (e.g., cell efficiency), using a Bayesian inference framework with an autoencoder-based surrogate device-physics model that is 100x faster than numerical solvers. With the trained surrogate model, our approach is robust and reduces significantly the time consuming experimentalist intervention, even with small numbers of fabricated samples. To demonstrate our method, we perform layer-by-layer optimization of GaAs solar cells. In a single cycle of learning, we find an improved growth temperature for the GaAs solar cells without any secondary measurements, and demonstrate a 6.5% relative AM1.5G efficiency improvement above baseline and traditional black-box optimization methods.
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Submitted 3 November, 2019; v1 submitted 25 July, 2019;
originally announced July 2019.