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Electrical transport properties driven by unique bonding configuration in gamma-GeSe
Authors:
Jeongsu Jang,
Joonho Kim,
Dongchul Sung,
Jong Hyuk Kim,
Joong-Eon Jung,
Sol Lee,
Jinsub Park,
Chaewoon Lee,
Heesun Bae,
Seongil Im,
Kibog Park,
Young Jai Choi,
Suklyun Hong,
Kwanpyo Kim
Abstract:
Group-IV monochalcogenides have recently shown great potential for their thermoelectric, ferroelectric, and other intriguing properties. The electrical properties of group-IV monochalcogenides exhibit a strong dependence on the chalcogen type. For example, GeTe exhibits high doping concentration, whereas S/Se-based chalcogenides are semiconductors with sizable bandgaps. Here, we investigate the el…
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Group-IV monochalcogenides have recently shown great potential for their thermoelectric, ferroelectric, and other intriguing properties. The electrical properties of group-IV monochalcogenides exhibit a strong dependence on the chalcogen type. For example, GeTe exhibits high doping concentration, whereas S/Se-based chalcogenides are semiconductors with sizable bandgaps. Here, we investigate the electrical and thermoelectric properties of gamma-GeSe, a recently identified polymorph of GeSe. gamma-GeSe exhibits high electrical conductivity (~106 S/m) and a relatively low Seebeck coefficient (9.4 uV/K at room temperature) owing to its high p-doping level (5x1021 cm-3), which is in stark contrast to other known GeSe polymorphs. Elemental analysis and first-principles calculations confirm that the abundant formation of Ge vacancies leads to the high p-doping concentration. The magnetoresistance measurements also reveal weak-antilocalization because of spin-orbit coupling in the crystal. Our results demonstrate that gamma-GeSe is a unique polymorph in which the modified local bonding configuration leads to substantially different physical properties.
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Submitted 14 April, 2023;
originally announced April 2023.
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Data Acquisition System for the UFFO Pathfinder
Authors:
G. W. Na,
K. -B. Ahn,
H. S. Choi,
Y. J. Choi,
B. Grossan,
I. Hermann,
S. Jeong,
A. Jung,
J. E. Kim,
S. -W. Kim,
Y. W. Kim,
J. Lee,
H. Lim,
E. V. Linder,
K. W. Min,
J. W. Nam,
K. H. Nam,
M. I. Panasyuk,
I. H. Park,
G. F. Smoot,
Y. D. Suh,
S. Svertilov,
N. Vedenkin,
I. Yashin,
M. H. Zhao
Abstract:
The Ultra-Fast Flash Observatory (UFFO) Pathfinder is a payload on the Russian Lomonosov satellite, scheduled to be launched in November 2011. The Observatory is designed to detect early UV/Optical photons from Gamma-Ray Bursts (GRBs). There are two telescopes and one main data acquisition system: the UFFO Burst Alert & Trigger Telescope (UBAT), the Slewing Mirror Telescope (SMT), and the UFFO Dat…
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The Ultra-Fast Flash Observatory (UFFO) Pathfinder is a payload on the Russian Lomonosov satellite, scheduled to be launched in November 2011. The Observatory is designed to detect early UV/Optical photons from Gamma-Ray Bursts (GRBs). There are two telescopes and one main data acquisition system: the UFFO Burst Alert & Trigger Telescope (UBAT), the Slewing Mirror Telescope (SMT), and the UFFO Data Acquisition (UDAQ) system. The UDAQ controls and manages the operation and communication of each telescope, and is also in charge of the interface with the satellite. It will write the data taken by each telescope to the NOR flash memory and sends them to the satellite via the Bus-Interface system (BI). It also receives data from the satellite including the coordinates and time of an external trigger from another payload, and distributes them to two telescopes. These functions are implemented in field programmable gates arrays (FPGA) for low power consumption and fast processing without a microprocessor. The UDAQ architecture, control of the system, and data flow will be presented.
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Submitted 28 June, 2011; v1 submitted 20 June, 2011;
originally announced June 2011.
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Implementation of the readout system in the UFFO Slewing Mirror Telescope
Authors:
J. E. Kim,
H. Lim,
A. Jung,
K. -B Ahn,
H. S. Choi,
Y. J. Choi,
B. Grossan,
I. Hermann,
S. Jeong,
S. -W. Kim,
Y. W. Kim,
J. Lee,
E. V. Linder,
K. W. Min,
G. W. Na,
J. W. Nam,
K. H. Nam,
M. I. Panayuk,
I. H. Park,
G. F. Smoot,
Y. D. Suh,
S. Svelitov,
N. Vedenken,
I. Yashin,
M. H. Zhao
Abstract:
The Ultra-Fast Flash Observatory (UFFO) is a new space-based experiment to observe Gamma-Ray Bursts (GRBs). GRBs are the most luminous electromagnetic events in the universe and occur randomly in any direction. Therefore the UFFO consists of two telescopes; UFFO Burst Alert & Trigger Telescope (UBAT) to detect GRBs using a wide field-of-view (FOV), and a Slewing Mirror Telescope (SMT) to observe U…
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The Ultra-Fast Flash Observatory (UFFO) is a new space-based experiment to observe Gamma-Ray Bursts (GRBs). GRBs are the most luminous electromagnetic events in the universe and occur randomly in any direction. Therefore the UFFO consists of two telescopes; UFFO Burst Alert & Trigger Telescope (UBAT) to detect GRBs using a wide field-of-view (FOV), and a Slewing Mirror Telescope (SMT) to observe UV/optical events rapidly within the narrow, targeted FOV. The SMT is a Ritchey-Chretien telescope that uses a motorized mirror system and an Intensified Charge-Coupled Device (ICCD). When the GRB is triggered by the UBAT, the SMT receives the position information and rapidly tilts the mirror to the target. The ICCD start to take the data within a second after GRB is triggered. Here we give the details about the SMT readout electronics that deliver the data.
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Submitted 20 June, 2011;
originally announced June 2011.