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Infrared Nanoimaging of Hydrogenated Perovskite Nickelate Synaptic Devices
Authors:
Sampath Gamage,
Sukriti Manna,
Marc Zajac,
Steven Hancock,
Qi Wang,
Sarabpreet Singh,
Mahdi Ghafariasl,
Kun Yao,
Tom Tiwald,
Tae Joon Park,
David P. Landau,
Haidan Wen,
Subramanian Sankaranarayanan,
Pierre Darancet,
Shriram Ramanathan,
Yohannes Abate
Abstract:
Solid-state devices made from correlated oxides such as perovskite nickelates are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nick…
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Solid-state devices made from correlated oxides such as perovskite nickelates are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehending dopant action at the nanoscale poses a formidable challenge to understanding the elementary mechanisms involved. Here, we perform operando infrared nanoimaging of hydrogen-doped correlated perovskite, neodymium nickel oxide (H-NdNiO3) devices and reveal how an applied field perturbs dopant distribution at the nanoscale. This perturbation leads to stripe phases of varying conductivity perpendicular to the applied field, which define the macroscale electrical characteristics of the devices. Hyperspectral nano-FTIR imaging in conjunction with density functional theory calculations unveil a real-space map of multiple vibrational states of H-NNO associated with OH stretching modes and their dependence on the dopant concentration. Moreover, the localization of excess charges induces an out-of-plane lattice expansion in NNO which was confirmed by in-situ - x-ray diffraction and creates a strain that acts as a barrier against further diffusion. Our results and the techniques presented here hold great potential to the rapidly growing field of memristors and neuromorphic devices wherein nanoscale ion motion is fundamentally responsible for function.
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Submitted 29 August, 2023;
originally announced September 2023.
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Quantitative Current-Voltage Characteristics in Molecular Junctions from First Principles
Authors:
Pierre Darancet,
Jonathan R. Widawsky,
Hyoung Joon Choi,
Latha Venkataraman,
Jeffrey B. Neaton
Abstract:
Using self-energy-corrected density functional theory (DFT) and a coherent scattering-state approach, we explain current-voltage (IV) measurements of four pyridine-Au and amine-Au linked molecular junctions with quantitative accuracy. Parameter-free many-electron self-energy corrections to DFT Kohn-Sham eigenvalues are demonstrated to lead to excellent agreement with experiments at finite bias, im…
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Using self-energy-corrected density functional theory (DFT) and a coherent scattering-state approach, we explain current-voltage (IV) measurements of four pyridine-Au and amine-Au linked molecular junctions with quantitative accuracy. Parameter-free many-electron self-energy corrections to DFT Kohn-Sham eigenvalues are demonstrated to lead to excellent agreement with experiments at finite bias, improving upon order-of-magnitude errors in currents obtained with standard DFT approaches. We further propose an approximate route for prediction of quantitative IV characteristics for both symmetric and asymmetric molecular junctions based on linear response theory and knowledge of the Stark shifts of junction resonance energies. Our work demonstrates that a quantitative, computationally inexpensive description of coherent transport in molecular junctions is readily achievable, enabling new understanding and control of charge transport properties of molecular-scale interfaces at large bias voltages.
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Submitted 30 November, 2012;
originally announced December 2012.
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Quantitative Molecular Orbital Energies within a $G_0W_0$ Approximation
Authors:
Sahar Sharifzadeh,
Isaac Tamblyn,
Peter Doak,
Pierre T. Darancet,
Jeffrey B. Neaton
Abstract:
Using many-body perturbation theory within the $G_0W_0$ approximation, we explore routes for computing the ionization potential (IP), electron affinity (EA), and fundamental gap of three gas-phase molecules -- benzene, thiophene, and (1,4) diamino-benzene -- and compare with experiments. We examine the dependence of the IP on the number of unoccupied states used to build the dielectric function an…
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Using many-body perturbation theory within the $G_0W_0$ approximation, we explore routes for computing the ionization potential (IP), electron affinity (EA), and fundamental gap of three gas-phase molecules -- benzene, thiophene, and (1,4) diamino-benzene -- and compare with experiments. We examine the dependence of the IP on the number of unoccupied states used to build the dielectric function and the self energy, as well as the dielectric function plane-wave cutoff. We find that with an effective completion strategy for approximating the unoccupied subspace, and a converged dielectric function kinetic energy cutoff, the computed IPs and EAs are in excellent quantitative agreement with available experiment (within 0.2 eV), indicating that a one-shot $G_0W_0$ approach can be very accurate for calculating addition/removal energies of small organic molecules. Our results indicate that a sufficient dielectric function kinetic energy cutoff may be the limiting step for a wide application of $G_0W_0$ to larger organic systems.
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Submitted 2 April, 2012;
originally announced April 2012.
