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The CMS Fast Beam Condition Monitor for HL-LHC
Authors:
G. Auzinger,
H. Bakhshiansohi,
A. Dabrowski,
A. G. Delannoy,
A. Dierlamm,
M. Dragicevic,
A. Gholami,
G. Gomez,
M. Guthoff,
M. Haranko,
A. Homna,
M. Jenihhin,
J. Kaplon,
O. Karacheban,
B. Korcsmáros,
W. H. Liu,
A. Lokhovitskiy,
R. Loos,
S. Mallows,
J. Michel,
V. Myronenko,
G. Pásztor,
M. Pari,
J. Schwandt,
M. Sedghi
, et al. (6 additional authors not shown)
Abstract:
The high-luminosity upgrade of the LHC brings unprecedented requirements for real-time and precision bunch-by-bunch online luminosity measurement and beam-induced background monitoring. A key component of the CMS Beam Radiation, Instrumentation and Luminosity system is a stand-alone luminometer, the Fast Beam Condition Monitor (FBCM), which is fully independent from the CMS central trigger and dat…
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The high-luminosity upgrade of the LHC brings unprecedented requirements for real-time and precision bunch-by-bunch online luminosity measurement and beam-induced background monitoring. A key component of the CMS Beam Radiation, Instrumentation and Luminosity system is a stand-alone luminometer, the Fast Beam Condition Monitor (FBCM), which is fully independent from the CMS central trigger and data acquisition services and able to operate at all times with a triggerless readout. FBCM utilizes a dedicated front-end application-specific integrated circuit (ASIC) to amplify the signals from CO$_2$-cooled silicon-pad sensors with a timing resolution of a few nanoseconds, which enables the measurement of the beam-induced background. FBCM uses a modular design with two half-disks of twelve modules at each end of CMS, with four service modules placed close to the outer edge to reduce radiation-induced aging. The electronics system design adapts several components from the CMS Tracker for power, control and read-out functionalities. The dedicated FBCM23 ASIC contains six channels and adjustable shaping time to optimize the noise with regards to sensor leakage current. Each ASIC channel outputs a single binary high-speed asynchronous signal carrying time-of-arrival and time-over-threshold information. The chip output signal is digitized, encoded and sent via a radiation-hard gigabit transceiver and an optical link to the back-end electronics for analysis. This paper reports on the updated design of the FBCM detector and the ongoing testing program.
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Submitted 6 February, 2024;
originally announced February 2024.
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A Beam Monitor for Ion Beam Therapy based on HV-CMOS Pixel Detectors
Authors:
Matthias Balzer,
Alexander Dierlamm,
Felix Ehrler,
Ulrich Husemann,
Roland Koppenhöfer,
Ivan Perić,
Martin Pittermann,
Bogdan Topko,
Alena Weber,
Stephan Brons,
Jürgen Debus,
Nicole Grau,
Thomas Hansmann,
Oliver Jäkel,
Sebastian Klüter,
Jakob Naumann
Abstract:
Particle therapy is a well established clinical treatment of tumors. More than one hundred particle therapy centers are in operation world wide. The advantage of using hadrons like protons or carbon ions as particles for tumor irradiation is the distinct peak in the depth dependent energy deposition, which can be exploited to accurately deposit dose in the tumor cells. To guarantee this, high accu…
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Particle therapy is a well established clinical treatment of tumors. More than one hundred particle therapy centers are in operation world wide. The advantage of using hadrons like protons or carbon ions as particles for tumor irradiation is the distinct peak in the depth dependent energy deposition, which can be exploited to accurately deposit dose in the tumor cells. To guarantee this, high accuracy of monitoring and control of the particle beam is of utmost importance. Before the particle beam enters the patient, it traverses a monitoring system which has to give fast feedback to the beam control system on position and dose rate of the beam while minimally interacting with the beam. The multi-wire chambers mostly used as beam position monitor have their limitations when fast response time is required (drift time). Future developments like MRI-guided ion beam therapy pose additional challenges for the beam monitoring system like tolerance of magnetic fields and acoustic noise (vibrations). Solid-state detectors promise to overcome these limitations and the higher resolution they offer can create additional benefits. This article presents the evaluation of an HV-CMOS detector for beam monitoring, provides results from feasibility studies in a therapeutic beam and summarizes the concepts towards the final large-scale assembly and readout system.
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Submitted 11 November, 2022;
originally announced November 2022.
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Experimental Determination of Proton Hardness Factors at Several Irradiation Facilities
Authors:
P. Allport,
F. Bogelspacher,
K. Bruce,
R. Canavan,
A. Dierlamm,
L. Gonella,
P. Knights,
I. Mateu,
M. Moll,
K. Nikolopoulos,
B. Phoenix,
T. Price,
L. Ram,
F. Ravotti,
C. Simpson-Allsop,
C. Wood
Abstract:
The scheduled High Luminosity upgrade of the CERN Large Hadron Collider presents new challenges in terms of radiation hardness. As a consequence, campaigns to qualify the radiation hardness of detector sensors and components are undertaken worldwide. The effects of irradiation with beams of different particle species and energy, aiming to assess displacement damage in semiconductor devices, are co…
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The scheduled High Luminosity upgrade of the CERN Large Hadron Collider presents new challenges in terms of radiation hardness. As a consequence, campaigns to qualify the radiation hardness of detector sensors and components are undertaken worldwide. The effects of irradiation with beams of different particle species and energy, aiming to assess displacement damage in semiconductor devices, are communicated in terms of the equivalent 1 MeV neutron fluence, using the hardness factor for the conversion. In this work, the hardness factors for protons at three different kinetic energies have been measured by analysing the I-V and C-V characteristics of reverse biased diodes, pre- and post-irradiation. The sensors were irradiated at the MC40 Cyclotron of the University of Birmingham, the cyclotron at the Karlsruhe Institute of Technology, and the IRRAD proton facility at CERN, with the respective measured proton hardness factors being: 2.1 +/- 0.5 for 24 MeV, 2.2 +/- 0.4 for 23 MeV, and 0.62 +/- 0.04 for 23 GeV. The hardness factors currently used in these three facilities are in agreement with the presented measurements.
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Submitted 12 November, 2019; v1 submitted 8 August, 2019;
originally announced August 2019.
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Test Beam Performance Measurements for the Phase I Upgrade of the CMS Pixel Detector
Authors:
M. Dragicevic,
M. Friedl,
J. Hrubec,
H. Steininger,
A. Gädda,
J. Härkönen,
T. Lampén,
P. Luukka,
T. Peltola,
E. Tuominen,
E. Tuovinen,
A. Winkler,
P. Eerola,
T. Tuuva,
G. Baulieu,
G. Boudoul,
L. Caponetto,
C. Combaret,
D. Contardo,
T. Dupasquier,
G. Gallbit,
N. Lumb,
L. Mirabito,
S. Perries,
M. Vander Donckt
, et al. (462 additional authors not shown)
Abstract:
A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator…
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A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator thresholds. In this paper, comprehensive test beam studies are presented, which have been conducted to verify the design and to quantify the performance of the new detector assemblies in terms of tracking efficiency and spatial resolution. Under optimal conditions, the tracking efficiency is $99.95\pm0.05\,\%$, while the intrinsic spatial resolutions are $4.80\pm0.25\,μ\mathrm{m}$ and $7.99\pm0.21\,μ\mathrm{m}$ along the $100\,μ\mathrm{m}$ and $150\,μ\mathrm{m}$ pixel pitch, respectively. The findings are compared to a detailed Monte Carlo simulation of the pixel detector and good agreement is found.
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Submitted 1 June, 2017;
originally announced June 2017.
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Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC
Authors:
C. Barth,
C. A. Betancourt,
I. Bloch,
F. Bögelspacher,
W. de Boer,
M. Daniels,
A. Dierlamm,
R. Eber,
G. Eckerlin,
D. Eckstein,
T. Eichhorn,
J. Erfle,
L. Feld,
E. Garutti,
I. -M. Gregor,
M. Guthoff,
F. Hartmann,
M. Hauser,
U. Husemann,
K. Jakobs,
A. Junkes,
W. Karpinski,
K. Klein,
S. Kuehn,
H. Lacker
, et al. (16 additional authors not shown)
Abstract:
While the tracking detectors of the ATLAS and CMS experiments have shown excellent performance in Run 1 of LHC data taking, and are expected to continue to do so during LHC operation at design luminosity, both experiments will have to exchange their tracking systems when the LHC is upgraded to the high-luminosity LHC (HL-LHC) around the year 2024. The new tracking systems need to operate in an env…
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While the tracking detectors of the ATLAS and CMS experiments have shown excellent performance in Run 1 of LHC data taking, and are expected to continue to do so during LHC operation at design luminosity, both experiments will have to exchange their tracking systems when the LHC is upgraded to the high-luminosity LHC (HL-LHC) around the year 2024. The new tracking systems need to operate in an environment in which both the hit densities and the radiation damage will be about an order of magnitude higher than today. In addition, the new trackers need to contribute to the first level trigger in order to maintain a high data-taking efficiency for the interesting processes. Novel detector technologies have to be developed to meet these very challenging goals. The German groups active in the upgrades of the ATLAS and CMS tracking systems have formed a collaborative "Project on Enabling Technologies for Silicon Microstrip Tracking Detectors at the HL-LHC" (PETTL), which was supported by the Helmholtz Alliance "Physics at the Terascale" during the years 2013 and 2014. The aim of the project was to share experience and to work together on key areas of mutual interest during the R&D phase of these upgrades. The project concentrated on five areas, namely exchange of experience, radiation hardness of silicon sensors, low mass system design, automated precision assembly procedures, and irradiations. This report summarizes the main achievements.
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Submitted 28 April, 2016;
originally announced April 2016.
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Trapping in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker
Authors:
W. Adam,
T. Bergauer,
M. Dragicevic,
M. Friedl,
R. Fruehwirth,
M. Hoch,
J. Hrubec,
M. Krammer,
W. Treberspurg,
W. Waltenberger,
S. Alderweireldt,
W. Beaumont,
X. Janssen,
S. Luyckx,
P. Van Mechelen,
N. Van Remortel,
A. Van Spilbeeck,
P. Barria,
C. Caillol,
B. Clerbaux,
G. De Lentdecker,
D. Dobur,
L. Favart,
A. Grebenyuk,
Th. Lenzi
, et al. (663 additional authors not shown)
Abstract:
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determi…
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The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.
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Submitted 7 May, 2015;
originally announced May 2015.
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Geant4 Simulation of a filtered X-ray Source for Radiation Damage Studies
Authors:
M. Guthoff,
O. Brovchenko,
W. de Boer,
A. Dierlamm,
T. Müller,
A. Ritter,
M. Schmanau,
H. -J. Simonis
Abstract:
Geant4 low energy extensions have been used to simulate the X-ray spectra of industrial X-ray tubes with filters for removing the uncertain low energy part of the spectrum in a controlled way. The results are compared with precisely measured X-ray spectra using a silicon drift detector. Furthermore, this paper shows how the different dose rates in silicon and silicon dioxide layers of an electroni…
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Geant4 low energy extensions have been used to simulate the X-ray spectra of industrial X-ray tubes with filters for removing the uncertain low energy part of the spectrum in a controlled way. The results are compared with precisely measured X-ray spectra using a silicon drift detector. Furthermore, this paper shows how the different dose rates in silicon and silicon dioxide layers of an electronic device can be deduced from the simulations.
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Submitted 9 May, 2012;
originally announced May 2012.
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Belle II Technical Design Report
Authors:
T. Abe,
I. Adachi,
K. Adamczyk,
S. Ahn,
H. Aihara,
K. Akai,
M. Aloi,
L. Andricek,
K. Aoki,
Y. Arai,
A. Arefiev,
K. Arinstein,
Y. Arita,
D. M. Asner,
V. Aulchenko,
T. Aushev,
T. Aziz,
A. M. Bakich,
V. Balagura,
Y. Ban,
E. Barberio,
T. Barvich,
K. Belous,
T. Bergauer,
V. Bhardwaj
, et al. (387 additional authors not shown)
Abstract:
The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been pr…
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The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been proposed. A new international collaboration Belle-II, is being formed. The Technical Design Report presents physics motivation, basic methods of the accelerator upgrade, as well as key improvements of the detector.
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Submitted 1 November, 2010;
originally announced November 2010.
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Czochralski Silicon as a Detector Material for S-LHC Tracker Volumes
Authors:
Leonard Spiegel,
Tobias Barvich,
Burt Betchart,
Saptaparna Bhattacharya,
Sandor Czellar,
Regina Demina,
Alexander Dierlamm,
Martin Frey,
Yuri Gotra,
Jaakko Härkönen,
Frank Hartmann,
Ivan Kassamakov,
Sergey Korjenevski,
Matti J. Kortelainen,
Tapio Lampén,
Teppo Mäenpää,
Henri Moilanen,
Meenakshi Narain,
Maike Neuland,
Douglas Orbaker,
Hans-Jürgen Simonis,
Pia Steck,
Eija Tuominen,
Esa Tuovinen
Abstract:
With an expected ten-fold increase in luminosity in S-LHC, the radiation environment in the tracker volumes will be considerably harsher for silicon-based detectors than the already harsh LHC environment. Since 2006, a group of CMS institutes, using a modified CMS DAQ system, has been exploring the use of Magnetic Czochralski silicon as a detector element for the strip tracker layers in S-LHC expe…
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With an expected ten-fold increase in luminosity in S-LHC, the radiation environment in the tracker volumes will be considerably harsher for silicon-based detectors than the already harsh LHC environment. Since 2006, a group of CMS institutes, using a modified CMS DAQ system, has been exploring the use of Magnetic Czochralski silicon as a detector element for the strip tracker layers in S-LHC experiments. Both p+/n-/n+ and n+/p-/p+ sensors have been characterized, irradiated with proton and neutron sources, assembled into modules, and tested in a CERN beamline. There have been three beam studies to date and results from these suggest that both p+/n-/n+ and n+/p-/p+ Magnetic Czochralski silicon are sufficiently radiation hard for the $R>25$ cm regions of S-LHC tracker volumes. The group has also explored the use of forward biasing for heavily irradiated detectors, and although this mode requires sensor temperatures less than -50\,$^\circ$C, the charge collection efficiency appears to be promising.
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Submitted 24 August, 2010;
originally announced August 2010.
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Silicon Detectors for the Large Prototype TPC test setup at DESY
Authors:
S. Haensel,
T. Bergauer,
M. Dragicevic,
J. Hrubec,
M. Krammer,
A. Dierlamm,
T. Barvich,
F. Hartmann,
Th. Müller
Abstract:
The Linear Collider TPC collaboration constructed a Large Prototype TPC (LPTPC) which is now installed at the EUDET facility, in DESY. The SiLC-collaboration (Silicon for the Linear Collider) will install position sensitive silicon strip sensors outside the field cage of the LPTPC, to provide precise tracking information. The data acquisition system (DAQ) is an adapted CMS readout system. The si…
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The Linear Collider TPC collaboration constructed a Large Prototype TPC (LPTPC) which is now installed at the EUDET facility, in DESY. The SiLC-collaboration (Silicon for the Linear Collider) will install position sensitive silicon strip sensors outside the field cage of the LPTPC, to provide precise tracking information. The data acquisition system (DAQ) is an adapted CMS readout system. The silicon modules are tested and ready to be installed, the mechanical module support and the DAQ system are in preparation.
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Submitted 19 February, 2009; v1 submitted 30 January, 2009;
originally announced January 2009.
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An algorithm for calculating the Lorentz angle in silicon detectors
Authors:
V. Bartsch,
W. de Boer,
J. Bol,
A. Dierlamm,
E. Grigoriev,
F. Hauler,
S. Heising,
L. Jungermann
Abstract:
Future experiments will use silicon sensors in the harsh radiation environment of the LHC (Large Hadron Collider) and high magnetic fields. The drift direction of the charge carriers is affected by the Lorentz force due to the high magnetic field. Also the resulting radiation damage changes the properties of the drift.
In this paper measurements of the Lorentz angle of electrons and holes befo…
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Future experiments will use silicon sensors in the harsh radiation environment of the LHC (Large Hadron Collider) and high magnetic fields. The drift direction of the charge carriers is affected by the Lorentz force due to the high magnetic field. Also the resulting radiation damage changes the properties of the drift.
In this paper measurements of the Lorentz angle of electrons and holes before and after irradiation are reviewed and compared with a simple algorithm to compute the Lorentz angle.
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Submitted 20 August, 2002; v1 submitted 26 April, 2002;
originally announced April 2002.
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Lorentz angle measurements in irradiated silicon detectors between 77 K and 300 K
Authors:
W. de Boer,
V. Bartsch,
J. Bol,
A. Dierlamm,
E. Grigoriev,
F. Hauler,
S. Heising,
O. Herz,
L. Jungermann,
T. Schneider
Abstract:
Future experiments are using silicon detectors in a high radiation environment and in high magnetic fields. The radiation tolerance of silicon improves by cooling it to temperatures below 180 K. At low temperatures the mobility increases, which leads to larger deflections of the charge carriers by the Lorentz force. A good knowledge of the Lorentz angle is needed for design and operation of sili…
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Future experiments are using silicon detectors in a high radiation environment and in high magnetic fields. The radiation tolerance of silicon improves by cooling it to temperatures below 180 K. At low temperatures the mobility increases, which leads to larger deflections of the charge carriers by the Lorentz force. A good knowledge of the Lorentz angle is needed for design and operation of silicon detectors. We present measurements of the Lorentz angle between 77 K and 300 K before and after irradiation with a primary beam of 21 MeV protons.
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Submitted 18 July, 2000; v1 submitted 17 July, 2000;
originally announced July 2000.