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How Charge Carrier Exchange between Absorber and Contact influences Time Constants in the Frequency Domain Response of Perovskite Solar Cells
Authors:
Sandheep Ravishankar,
Zhifa Liu,
Yueming Wang,
Thomas Kirchartz,
Uwe Rau
Abstract:
A model is derived for the frequency- and time-domain opto-electronic response of perovskite solar cells (PSCs) that emphasizes the role of charge carrier exchange, .i.e. extraction and injection, from (to) the perovskite through the transport layer to (from) the collecting electrode. This process is described by a charge carrier exchange velocity that depends on the mobility and electric field in…
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A model is derived for the frequency- and time-domain opto-electronic response of perovskite solar cells (PSCs) that emphasizes the role of charge carrier exchange, .i.e. extraction and injection, from (to) the perovskite through the transport layer to (from) the collecting electrode. This process is described by a charge carrier exchange velocity that depends on the mobility and electric field inside the transport layer. The losses implied by this process are modelled in an equivalent circuit model in the form of a voltage-dependent transport layer resistance. The analysis of the model predicts that the voltage dependence of the measured time constants allows discriminating situations where the transport layer properties dominate the experimental response. Application of this method to experimental impedance spectroscopy data identifies charge extraction velocities between 1-100 cm/s at 1 sun open-circuit conditions for p-i-n PSCs with PTAA as the hole transport layer, that corresponds to transport layer mobilities between 10^-4 - 3 x 10^-3 cm^2V^-1s^-1. The model paves the way for accurate estimation of photocurrent and fill factor losses in PSCs caused by the low mobilities in the transport layers, using small perturbation measurements in the time and frequency domain.
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Submitted 17 March, 2023;
originally announced March 2023.
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A Universal Strategy of Perovskite Ink-Substrate Interaction to Overcome the Poor Wettability of a Self-Assembled Monolayer for Reproducible Perovskite Solar Cells
Authors:
Ashish Kulkarni,
Ranjini Sarkar,
Samah Akel,
Maria Haeser,
Benjamin Klingebiel,
Matthias Wuttig,
Sudip Chakraborty,
Michael Saliba,
Thomas Kirchartz
Abstract:
Perovskite solar cells employing self assembled monolayers such as Me-4PACz as hole transport layer has been reported to demonstrate high device efficiency. However, the poor perovskite wetting on the Me-4PACz caused by poor perovskite ink interaction with the underlying Me-4PACz presents significant challenges for fabricating efficient perovskite devices. A triple co-solvent system comprising of…
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Perovskite solar cells employing self assembled monolayers such as Me-4PACz as hole transport layer has been reported to demonstrate high device efficiency. However, the poor perovskite wetting on the Me-4PACz caused by poor perovskite ink interaction with the underlying Me-4PACz presents significant challenges for fabricating efficient perovskite devices. A triple co-solvent system comprising of dimethylformamide (DMF), dimethyl sulfoxide (DMSO) and N-methyl-2-pyrrolidone (NMP) is employed to improve the perovskite ink-substrate interaction and obtain a uniform perovskite layer. In comparison to DMF, DMSO-based inks, the inclusion of NMP shows considerably higher binding energies of the perovskite ink with Me-4PACz as revealed by density-functional theory calculations. With the optimized triple co-solvent ratio, the perovskite devices deliver high power conversion efficiencies of >20%, 19.5% and ~18.5% for active areas of 0.16 cm2, 0.72 cm2 and 1.08 cm2 respectively. Importantly, this perovskite ink-substrate interaction approach is universal and helps in obtaining a uniform layer and high photovoltaic device performance for other perovskite compositions such as MAPbI3, FAMAPbI3-xBrx, and MA-free FACsPbI3-xBrx.
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Submitted 10 February, 2023;
originally announced February 2023.
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Comparing Methods of Characterizing Energetic Disorder in Organic Solar Cells
Authors:
Paula Hartnagel,
Sandheep Ravishankar,
Benjamin Klingebiel,
Oliver Thimm,
Thomas Kirchartz
Abstract:
Energetic disorder has been known for decades to limit the performance of structurally disordered semiconductors such as amorphous silicon and organic semiconductors. However, in the past years, high performance organic solar cells have emerged showing a continuously reduced amount of energetic disorder. While searching for future high efficiency material systems, it is therefore important to corr…
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Energetic disorder has been known for decades to limit the performance of structurally disordered semiconductors such as amorphous silicon and organic semiconductors. However, in the past years, high performance organic solar cells have emerged showing a continuously reduced amount of energetic disorder. While searching for future high efficiency material systems, it is therefore important to correctly characterize this energetic disorder. While there are several techniques in literature, the most common approaches to probe the density of defect states are using optical excitation as in external quantum efficiency measurements or sequential filling of the tail states by applying an external voltage as in admittance spectroscopy. A metanalysis of available literature as well as our experiments using four characterization techniques on two material systems reveal that electrical, voltage-dependent measurements frequently yield higher values of energetic disorder than optical measurements. With drift-diffusion simulations, we demonstrate that the approaches probe different energy ranges of the subband-gap density of states. We further explore the limitations of the techniques and find that extraction of information from a capacitance-voltage curve can be inhibited by an internal series resistance. Thereby, we explain the discrepancies between measurements techniques with sensitivity to different energy ranges and electronic parameters.
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Submitted 17 January, 2023;
originally announced January 2023.
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Fill Factor Losses and Deviations from the Superposition Principle in Lead-Halide Perovskite Solar Cells
Authors:
David Grabowski,
Zhifa Liu,
Gunnar Schöpe,
Uwe Rau,
Thomas Kirchartz
Abstract:
The enhancement of the fill factor in the current generation of perovskite solar cells is the key for further efficiency improvement. Thus, methods to quantify the fill factor losses are urgently needed. A classical method to quantify Ohmic and non-Ohmic resistive losses in solar cells is based on the comparison between the voltage in the dark and under illumination analysed at equal recombination…
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The enhancement of the fill factor in the current generation of perovskite solar cells is the key for further efficiency improvement. Thus, methods to quantify the fill factor losses are urgently needed. A classical method to quantify Ohmic and non-Ohmic resistive losses in solar cells is based on the comparison between the voltage in the dark and under illumination analysed at equal recombination current density. Applied to perovskite solar cells, we observe a combination of an Ohmic series resistance with a voltage-dependent resistance that is most prominent at short circuit and low forward bias. The latter is most likely caused by the poor transport properties of the electron and/or hole transport layers. By measuring the photoluminescence of perovskite solar cells as a function of applied voltage, we provide direct evidence for a high quasi-Fermi level splitting at low and moderate forward bias that substantially exceeds the externally applied voltage. This quasi-Fermi level splitting causes recombination losses and, thus, reduces both the short-circuit current and the fill factor of the solar cell.
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Submitted 16 June, 2022;
originally announced July 2022.
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Interpretation of Mott-Schottky Plots of Photoanodes for Water Splitting
Authors:
Sandheep Ravishankar,
Juan Bisquert,
Thomas Kirchartz
Abstract:
A large body of literature reports that both bismuth vanadate and haematite photoanodes are semiconductors with an extremely high doping density between 10^18-10^21 cm^-3. Such values are obtained from Mott-Schottky plots by assuming that the measured capacitance is dominated by the capacitance of the depletion layer formed by the doping density within the photoanode. In this work, we show that su…
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A large body of literature reports that both bismuth vanadate and haematite photoanodes are semiconductors with an extremely high doping density between 10^18-10^21 cm^-3. Such values are obtained from Mott-Schottky plots by assuming that the measured capacitance is dominated by the capacitance of the depletion layer formed by the doping density within the photoanode. In this work, we show that such an assumption is erroneous in many cases because the injection of electrons from the collecting contact creates a ubiquitous capacitance step that is very difficult to distinguish from that of the depletion layer. Based on this reasoning, we derive an analytical resolution limit that is independent of the assumed active area and surface roughness of the photoanode, below which doping densities cannot be measured in a capacitance measurement. We find that the reported doping densities in literature lie very close to this value and therefore conclude that there is no credible evidence from capacitance measurements that confirms that bismuth vanadate and haematite photoanodes contain high doping densities.
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Submitted 21 March, 2022; v1 submitted 11 January, 2022;
originally announced January 2022.
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Effect of doping, photodoping and bandgap variation on the performance of perovskite solar cells
Authors:
Basita Das,
Irene Aguilera,
Uwe Rau,
Thomas Kirchartz
Abstract:
Most traditional semiconductor materials are based on the control of doping densities to create junctions and thereby functional and efficient electronic and optoelectronic devices. The technology development for halide perovskites had initially only rarely made use of the concept of electronic doping of the perovskite layer and instead employed a variety of different contact materials to create f…
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Most traditional semiconductor materials are based on the control of doping densities to create junctions and thereby functional and efficient electronic and optoelectronic devices. The technology development for halide perovskites had initially only rarely made use of the concept of electronic doping of the perovskite layer and instead employed a variety of different contact materials to create functionality. Only recently, intentional, or unintentional doping of the perovskite layer is more frequently invoked as an important factor explaining differences in photovoltaic or optoelectronic performance in certain devices. Here we use numerical simulations to study the influence of doping and photodoping on photoluminescence quantum yield as well as other device relevant metrics. We find that doping can improve the photoluminescence quantum yield by making radiative recombination faster. This effect can benefit or harm photovoltaic performance given that the improvement of photoluminescence quantum efficiency and open-circuit voltage is accompanied by a reduction of the diffusion length. This reduction will eventually lead to inefficient carrier collection at high doping densities. The photovoltaic performance might improve at an optimum doping density which depends on a range of factors such as the mobilities of the different layers and the ratio of the capture cross sections for electrons and holes.
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Submitted 6 December, 2021;
originally announced December 2021.
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Multilayer Capacitances: How Selective Contacts Affect Capacitance Measurements of Perovskite Solar Cells
Authors:
Sandheep Ravishankar,
Zhifa Liu,
Uwe Rau,
Thomas Kirchartz
Abstract:
Capacitance measurements as a function of voltage, frequency and temperature are useful tools to identify fundamental parameters that affect solar cell operation. Techniques such as capacitance-voltage (CV), Mott-Schottky analysis and thermal admittance spectroscopy (TAS) measurements are therefore frequently employed to obtain relevant parameters of the perovskite absorber layer in perovskite sol…
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Capacitance measurements as a function of voltage, frequency and temperature are useful tools to identify fundamental parameters that affect solar cell operation. Techniques such as capacitance-voltage (CV), Mott-Schottky analysis and thermal admittance spectroscopy (TAS) measurements are therefore frequently employed to obtain relevant parameters of the perovskite absorber layer in perovskite solar cells. However, state-of-the-art perovskite solar cells employ thin electron and hole transport layers that improve contact selectivity. These selective contacts are often quite resistive in nature, which implies that their capacitances will contribute to the total capacitance and thereby affect the extraction of the capacitance of the perovskite layer. Based on this premise, we develop a simple multilayer model that considers the perovskite solar cell as a series connection of the geometric capacitance of each layer in parallel with their voltage-dependent resistances. Analysis of this model yields fundamental limits to the resolution of spatial doping profiles and minimum values of doping/trap densities, built-in voltages and activation energies. We observe that most of the experimental capacitance-voltage-frequency-temperature data, calculated doping/trap densities and activation energies reported in literature are within these cut-off values derived, indicating that the capacitance response of the perovskite solar cell is indeed strongly affected by the capacitance of its selective contacts.
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Submitted 21 December, 2021; v1 submitted 10 June, 2021;
originally announced June 2021.
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Comment on "Resolving spatial and energetic distributions of trap states in metal halide perovskite solar cells"
Authors:
Sandheep Ravishankar,
Thomas Unold,
Thomas Kirchartz
Abstract:
Ni et al. report minimum bulk trap densities of 10^11 cm-3 and 1-4 orders change in interfacial trap densities derived from drive-level capacitance profiling of lead halide perovskites. From basic electrostatic arguments, we show that such bulk trap densities cannot be resolved for a p-i-n perovskite solar cell for the reported layer thicknesses, while the apparent interfacial charge densities are…
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Ni et al. report minimum bulk trap densities of 10^11 cm-3 and 1-4 orders change in interfacial trap densities derived from drive-level capacitance profiling of lead halide perovskites. From basic electrostatic arguments, we show that such bulk trap densities cannot be resolved for a p-i-n perovskite solar cell for the reported layer thicknesses, while the apparent interfacial charge densities are a consequence of the geometrical capacitance and of charge injection into the perovskite layer.
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Submitted 29 November, 2020; v1 submitted 6 August, 2020;
originally announced August 2020.
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Pitfalls and prospects of optical spectroscopy to characterize perovskite-transport layer interfaces
Authors:
Eline M. Hutter,
Thomas Kirchartz,
Bruno Ehrler,
David Cahen,
Elizabeth von Hauff
Abstract:
Perovskite photovoltaics has witnessed an unprecedented increase in power conversion efficiency over the last decade. The choice of transport layers, through which photo-generated electrons and holes are transported to the electrodes, is a crucial factor for further improving both the device performance and stability. In this perspective, we critically examine the application of optical spectrosco…
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Perovskite photovoltaics has witnessed an unprecedented increase in power conversion efficiency over the last decade. The choice of transport layers, through which photo-generated electrons and holes are transported to the electrodes, is a crucial factor for further improving both the device performance and stability. In this perspective, we critically examine the application of optical spectroscopy to characterize the quality of the transport layer-perovskite interface. We highlight the power of complementary studies that use both continuous wave (cw) and time-resolved photoluminescence (PL) to understand non-radiative losses, and additional transient spectroscopies for characterizing the potential for loss-less carrier extraction at the solar cell interfaces. Based on this discussion, we make recommendations on how to extrapolate results from optical measurements to assess the quality of a transport layer, and its impact on solar cell efficiency.
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Submitted 22 December, 2019;
originally announced December 2019.
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A highly integrated, stand-alone photoelectrochemical device for large-scale solar hydrogen production
Authors:
Minoh Lee,
Bugra Turan,
Jan-Philipp Becker,
Katharina Welter,
Benjamin Klingebiel,
Elmar Neumann,
Yoo Jung Sohn,
Tsvetelina Merdzhanova,
Thomas Kirchartz,
Friedhelm Finger,
Uwe Rau,
Stefan Haas
Abstract:
Although photoelectrochemical water splitting is likely to be an important and powerful tool to provide environmentally friendly hydrogen, most developments in this field have been conducted on a laboratory scale so far. In order for the technology to make a sizeable impact on the energy transition, scaled up devices made of inexpensive and earth abundant materials must be developed. In this work,…
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Although photoelectrochemical water splitting is likely to be an important and powerful tool to provide environmentally friendly hydrogen, most developments in this field have been conducted on a laboratory scale so far. In order for the technology to make a sizeable impact on the energy transition, scaled up devices made of inexpensive and earth abundant materials must be developed. In this work, we demonstrate a scalable (64 cm2 aperture area) artificial photoelectrochemical device composed of triple-junction thin-film silicon solar cells in conjunction with an electrodeposited bifunctional nickel iron molybdenum water splitting catalyst. Our device shows a solar to hydrogen efficiency of up to 4.67% (5.33% active area) without bias assistance and wire connection. Furthermore, gas separation was enabled by incorporating a membrane in a 3D printed device frame.
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Submitted 30 October, 2019;
originally announced October 2019.
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Pathways towards 30% efficient single-junction perovskite solar cells and the role of mobile ions
Authors:
Jonas Diekmann,
Pietro Caprioglio,
Moritz H. Futscher,
Vincent M. Le Corre,
Sebastian Reichert,
Frank Jaiser,
Malavika Arvind,
Lorena Perdigon Toro,
Emilio Gutierrez-Partida,
Francisco Pena-Camargo,
Carsten Deibel,
Bruno Ehrler,
Thomas Unold,
Thomas Kirchartz,
Dieter Neher,
Martin Stolterfoht
Abstract:
Perovskite semiconductors have demonstrated outstanding external luminescence quantum yields, enabling high power conversion efficiencies (PCE). However, the precise conditions to advance to an efficiency regime above monocrystalline silicon cells are not well understood. Here, we establish a simulation model that well describes efficient p-i-n type perovskite solar cells and a range of different…
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Perovskite semiconductors have demonstrated outstanding external luminescence quantum yields, enabling high power conversion efficiencies (PCE). However, the precise conditions to advance to an efficiency regime above monocrystalline silicon cells are not well understood. Here, we establish a simulation model that well describes efficient p-i-n type perovskite solar cells and a range of different experiments. We then study important device and material parameters and we find that an efficiency regime of 30% can be unlocked by optimizing the built-in potential across the perovskite layer by using either highly doped (10^19 cm-3), thick transport layers (TLs) or ultrathin undoped TLs, e.g. self-assembled monolayers. Importantly, we only consider parameters that have been already demonstrated in recent literature, that is a bulk lifetime of 10 us, interfacial recombination velocities of 10 cm/s, a perovskite bandgap of 1.5 eV and an EQE of 95%. A maximum efficiency of 31% is predicted for a bandgap of 1.4 eV. Finally, we demonstrate that the relatively high mobile ion density does not represent a significant barrier to reach this efficiency regime. Thus, the results of this paper promise continuous PCE improvements until perovskites may become the most efficient single-junction solar cell technology in the near future.
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Submitted 25 April, 2021; v1 submitted 16 October, 2019;
originally announced October 2019.
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Requirements for functional pn-homojunctions in lead-halide perovskite solar cells
Authors:
Thomas Kirchartz,
David Cahen
Abstract:
Cui et al. describe the fabrication and characterization of planar pn-junction solar cells based on lead-halide perovskites. The doping densities measured using Hall effect measurements vary from $N_D = 10^{12} cm^{-3}$ to $8\times 10^{12} cm^{-3}$ for the solution-processed n-type layer and $N_A = 8\times 10^9 cm^{-3}$ for the evaporated p-type layer. While these devices outperform their counterp…
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Cui et al. describe the fabrication and characterization of planar pn-junction solar cells based on lead-halide perovskites. The doping densities measured using Hall effect measurements vary from $N_D = 10^{12} cm^{-3}$ to $8\times 10^{12} cm^{-3}$ for the solution-processed n-type layer and $N_A = 8\times 10^9 cm^{-3}$ for the evaporated p-type layer. While these devices outperform their counterparts, that are supposedly un-doped, the results raise three important questions: (i) Are the reported doping densities high enough to change the electrostatic potential distribution in the device from that for the un-doped ones, (ii) are the doping densities high enough for the pn-junction to remain intact under typical photovoltaic operation conditions and (iii) is a pn-junction beneficial for photovoltaic performance given the typical properties of lead-halide perovskites.
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Submitted 25 July, 2019;
originally announced July 2019.
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High Open-Circuit Voltages in Lead-Halide Perovskite Solar Cells - Experiment, Theory and Open Questions
Authors:
Thomas Kirchartz
Abstract:
One of the most significant features of lead-halide perovskites are their ability to have comparably slow recombination despite the fact that these materials are mostly processed from solution at room temperature. The slow recombination allows achieving high open-circuit voltages when the lead-halide perovskite layers are used in solar cells. This perspective discusses the state of the art of our…
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One of the most significant features of lead-halide perovskites are their ability to have comparably slow recombination despite the fact that these materials are mostly processed from solution at room temperature. The slow recombination allows achieving high open-circuit voltages when the lead-halide perovskite layers are used in solar cells. This perspective discusses the state of the art of our understanding and of experimental data with regard to recombination and open-circuit voltages in lead-halide perovskites. A special focus is put onto open questions that the community has to tackle to design future photovoltaic and optoelectronic devices based on lead-halide perovskites and other semiconductors with similar properties.
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Submitted 27 March, 2019;
originally announced April 2019.
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Solar Energy Conversion and the Shockley-Queisser Model, a Guide for the Perplexed
Authors:
Jean-Francois Guillemoles,
Thomas Kirchartz,
David Cahen,
Uwe Rau
Abstract:
The Shockley-Queisser model is a landmark in photovoltaic device analysis by defining an ideal situation as reference for actual solar cells. However, the model and its implications are easily misunderstood. Thus, we present a guide to help understand and avoid misinterpreting it. Focusing on the five assumptions, underlying the model, we define figures of merit to quantify how close real solar ce…
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The Shockley-Queisser model is a landmark in photovoltaic device analysis by defining an ideal situation as reference for actual solar cells. However, the model and its implications are easily misunderstood. Thus, we present a guide to help understand and avoid misinterpreting it. Focusing on the five assumptions, underlying the model, we define figures of merit to quantify how close real solar cells approach each of these assumptions.
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Submitted 28 March, 2019;
originally announced March 2019.
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The perovskite/transport layer interfaces dominate non-radiative recombination in efficient perovskite solar cells
Authors:
Martin Stolterfoht,
Pietro Caprioglio,
Christian M. Wolff,
José A. Márquez,
Joleik Nordmann,
Shanshan Zhang,
Daniel Rothhardt,
Ulrich Hörmann,
Alex Redinger,
Lukas Kegelmann,
Steve Albrecht,
Thomas Kirchartz,
Michael Saliba,
Thomas Unold,
Dieter Neher
Abstract:
Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V_OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport layer (ETL/HTL) need to be as selective as possible. B…
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Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V_OC) of the cell. In order to realize the full thermodynamic potential of the perovskite absorber, both the electron and hole transport layer (ETL/HTL) need to be as selective as possible. By measuring the quasi-Fermi level splitting (QFLS) of perovskite/CTL heterojunctions, we quantify the non-radiative interfacial recombination current for a wide range of commonly used CTLs, including various hole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes. We find that all studied CTLs limit the V_OC by inducing an additional non-radiative recombination current that is significantly larger than the loss in the neat perovskite and that the least-selective interface sets the upper limit for the V_OC of the device. The results also show that the V_OC equals the internal QFLS in the absorber layer of (pin, nip) cells with selective CTLs and power conversion efficiencies of up to 21.4%. However, in case of less selective CTLs, the V_OC is substantially lower than the QFLS which indicates additional losses at the contacts and/or interfaces. The findings are corroborated by rigorous device simulations which outline several important considerations to maximize the V_OC. This work shows that the real challenge to supress non-radiative recombination losses in perovskite cells on their way to the radiative limit lies in the suppression of carrier recombination at the perovskite/CTL interfaces.
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Submitted 22 October, 2018; v1 submitted 2 October, 2018;
originally announced October 2018.