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The quality assurance test of the SliT ASIC for the J-PARC muon $g-2$/EDM experiment
Authors:
Takashi Yamanaka,
Yoichi Fujita,
Eitaro Hamada,
Tetsuichi Kishishita,
Tsutomu Mibe,
Yutaro Sato,
Yoshiaki Seino,
Masayoshi Shoji,
Taikain Suehara,
Manobu M. Tanaka,
Junji Tojo,
Keisuke Umebayashi,
Tamaki Yoshioka
Abstract:
The SliT ASIC is a readout chip for the silicon strip detector to be used at the J-PARC muon $g-2$/EDM experiment. The production version of SliT128D was designed and mass production was finished. A quality assurance test method for bare SliT128D chips was developed to provide a sufficient number of chips for the experiment. The quality assurance test of the SliT128D chips was performed and 5735 c…
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The SliT ASIC is a readout chip for the silicon strip detector to be used at the J-PARC muon $g-2$/EDM experiment. The production version of SliT128D was designed and mass production was finished. A quality assurance test method for bare SliT128D chips was developed to provide a sufficient number of chips for the experiment. The quality assurance test of the SliT128D chips was performed and 5735 chips were inspected. No defect was observed in chips of 84.3%. Accepting a few channels with poor time walk performance out of 128 channels per chip, more than 90% yield can be achieved, which is sufficient to construct the whole detector.
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Submitted 22 January, 2024;
originally announced January 2024.
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Study of scintillation light collection, production and propagation in a 4 tonne dual-phase LArTPC
Authors:
B. Aimard,
L. Aizawa,
C. Alt,
J. Asaadi,
M. Auger,
V. Aushev,
D. Autiero,
A. Balaceanu,
G. Balik,
L. Balleyguier,
E. Bechetoille,
D. Belver,
A. M. Blebea-Apostu,
S. Bolognesi,
S. Bordoni,
N. Bourgeois,
B. Bourguille,
J. Bremer,
G. Brown,
G. Brunetti,
L. Brunetti,
D. Caiulo,
M. Calin,
E. Calvo,
M. Campanelli
, et al. (138 additional authors not shown)
Abstract:
The $3 \times 1 \times 1$ m$^3$ demonstrator is a dual phase liquid argon time projection chamber that has recorded cosmic rays events in 2017 at CERN. The light signal in these detectors is crucial to provide precise timing capabilities. The performances of the photon detection system, composed of five PMTs, are discussed. The collected scintillation and electroluminescence light created by passi…
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The $3 \times 1 \times 1$ m$^3$ demonstrator is a dual phase liquid argon time projection chamber that has recorded cosmic rays events in 2017 at CERN. The light signal in these detectors is crucial to provide precise timing capabilities. The performances of the photon detection system, composed of five PMTs, are discussed. The collected scintillation and electroluminescence light created by passing particles has been studied in various detector conditions. In particular, the scintillation light production and propagation processes have been analyzed and compared to simulations, improving the understanding of some liquid argon properties.
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Submitted 20 December, 2020; v1 submitted 16 October, 2020;
originally announced October 2020.
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LTARS: Analog Readout Front-end ASIC for Versatile TPC-applications
Authors:
Tetsuichi Kishishita,
S. Sumomozawa,
T. Kosaka,
T. Igarashi,
K. Sakashita,
M. Shoji,
M. M. Tanaka,
T. Hasegawa,
K. Negishi,
S. Narita,
T. Nakamura,
K. Miuchi
Abstract:
We designed a versatile analog front-end chip, called LTARS, for TPC-applications, primarily targeted at dual-phase liquid Ar-TPCs for neutrino experiments and negative-ion $μ$-TPCs for directional dark matter searches. Low-noise performance and wide dynamic range are two requirements for reading out the signals induced on the TPC readout channels. One of the development objectives is to establish…
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We designed a versatile analog front-end chip, called LTARS, for TPC-applications, primarily targeted at dual-phase liquid Ar-TPCs for neutrino experiments and negative-ion $μ$-TPCs for directional dark matter searches. Low-noise performance and wide dynamic range are two requirements for reading out the signals induced on the TPC readout channels. One of the development objectives is to establish the analog processing circuits under low temperature operation, which are designed on function block basis as reusable IPs (Intellectual Properties). The newly developed ASIC was implemented in the Silterra 180~nm CMOS technology and has 16 readout channels. We carried out the performance test at room temperature and the results showed an equivalent noise charge of 2695$\pm$71~e$^-$ (rms) with a detector capacitance of 300~pF. The dynamic range was measured to be 20--100~fC in the low-gain mode and 200--1600~fC in the high-gain mode within 10\% integral nonlinearity at room temperature. We also tested the performance at the liquid-Ar temperature and found a deterioration of the noise level with a longer shaper time. Based on these results, we also discuss a unique simulation methodology for future cold-electronics development. This method can be applicable to design the electronics used at low temperature.
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Submitted 17 August, 2020;
originally announced August 2020.
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SliT: A Strip-sensor Readout Chip with Subnanosecond Time-walk for the J-PARC Muon $g-2$/EDM Experiment
Authors:
Tetsuichi Kishishita,
Yutaro Sato,
Yoichi Fujita,
Eitaro Hamada,
Tsutomu Mibe,
Tsubasa Nagasawa,
Shohei Shirabe,
Masayoshi Shoji,
Taikan Suehara,
Manobu M. Tanaka,
Junji Tojo,
Yuki Tsutumi,
Takashi Yamanaka,
Tamaki Yoshioka
Abstract:
A new silicon-strip readout chip named "SliT" has been developed for the measurement of the muon anomalous magnetic moment and electric dipole moment at J-PARC. The SliT is designed in the Silterra 180 nm CMOS technology with mixed-signal integrated circuits. An analog circuit incorporates a conventional charge-sensitive amplifier, shaping amplifiers, and two distinct discriminators for each of 12…
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A new silicon-strip readout chip named "SliT" has been developed for the measurement of the muon anomalous magnetic moment and electric dipole moment at J-PARC. The SliT is designed in the Silterra 180 nm CMOS technology with mixed-signal integrated circuits. An analog circuit incorporates a conventional charge-sensitive amplifier, shaping amplifiers, and two distinct discriminators for each of 128 identical channels. A digital part includes storage memories, an event building block, a serializer, and LVDS drivers. A distinct feature of the SliT is utilization of the zero-cross architecture, which consists of a CR-RC filter followed by a CR circuit as a voltage differentiator. This architecture enables to generate hit signals with subnanosecond amplitude-independent time walk, which is the primary requirement for the experiment. The test results show the time walk of $0.38 \pm 0.16$ ns between 0.5 and 3 MIP signals. The equivalent noise charge is $1547 \pm 75 $ $e^{-}$ (rms) at $C_{\rm det} = 33$ pF as a strip-sensor capacitance. Other functionalities such as a strip-sensor readout chip have also been proven in the tests. The SliT128C satisfies all requirements of the J-PARC muon $g-2$/EDM experiment.
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Submitted 28 July, 2020; v1 submitted 14 June, 2020;
originally announced June 2020.
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Prototype Front-end ASIC for Silicon-strip Detectors of J-PARC Muon g-2/EDM Experiment
Authors:
Yuki Tsutsumi,
Tetsuichi Kishishita,
Yutaro Sato,
Masayoshi Shoji,
Manobu M. Tanaka,
Tsutomu Mibe,
Junji Tojo
Abstract:
We report on the development of a front-end ASIC for silicon-strip detectors of the J-PARC Muon g-2/EDM experiment. This experiment aims to measure the muon anomalous magnetic moment and electric dipole moment precisely to explore new physics beyond the Standard Model. Since the time and momentum of positrons from muon decay are key information in the experiment, a fast response with high granular…
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We report on the development of a front-end ASIC for silicon-strip detectors of the J-PARC Muon g-2/EDM experiment. This experiment aims to measure the muon anomalous magnetic moment and electric dipole moment precisely to explore new physics beyond the Standard Model. Since the time and momentum of positrons from muon decay are key information in the experiment, a fast response with high granularity is demanded to silicon-strip detectors as the positron tracker. The readout ASIC is thus required to tolerate a high hit rate of 1.4 MHz per strip and to have deep memory for the period of 40 us with 5 ns time resolution. To satisfy the experimental requirements, an analog prototype ASIC was newly designed with the Silterra 180 nm CMOS technology. In the evaluation test, the time-walk was demonstrated to reach 0.8~ns with a sufficient dynamic range of 6~MIPs and pulse width of 45~ns for 1 MIP event. The design details and performance of the ASIC are discussed in this article.
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Submitted 29 January, 2019;
originally announced January 2019.
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A New Approach for Measuring the Muon Anomalous Magnetic Moment and Electric Dipole Moment
Authors:
M. Abe,
S. Bae,
G. Beer,
G. Bunce,
H. Choi,
S. Choi,
M. Chung,
W. da Silva,
S. Eidelman,
M. Finger,
Y. Fukao,
T. Fukuyama,
S. Haciomeroglu,
K. Hasegawa,
K. Hayasaka,
N. Hayashizaki,
H. Hisamatsu,
T. Iijima,
H. Iinuma,
K. Inami,
H. Ikeda,
M. Ikeno,
K. Ishida,
T. Itahashi,
M. Iwasaki
, et al. (71 additional authors not shown)
Abstract:
This paper introduces a new approach to measure the muon magnetic moment anomaly $a_μ = (g-2)/2$, and the muon electric dipole moment (EDM) $d_μ$ at the J-PARC muon facility. The goal of our experiment is to measure $a_μ$ and $d_μ$ using an independent method with a factor of 10 lower muon momentum, and a factor of 20 smaller diameter storage-ring solenoid compared with previous and ongoing muon…
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This paper introduces a new approach to measure the muon magnetic moment anomaly $a_μ = (g-2)/2$, and the muon electric dipole moment (EDM) $d_μ$ at the J-PARC muon facility. The goal of our experiment is to measure $a_μ$ and $d_μ$ using an independent method with a factor of 10 lower muon momentum, and a factor of 20 smaller diameter storage-ring solenoid compared with previous and ongoing muon $g-2$ experiments with unprecedented quality of the storage magnetic field. Additional significant differences from the present experimental method include a factor of 1,000 smaller transverse emittance of the muon beam (reaccelerated thermal muon beam), its efficient vertical injection into the solenoid, and tracking each decay positron from muon decay to obtain its momentum vector. The precision goal for $a_μ$ is statistical uncertainty of 450 part per billion (ppb), similar to the present experimental uncertainty, and a systematic uncertainty less than 70 ppb. The goal for EDM is a sensitivity of $1.5\times 10^{-21}~e\cdot\mbox{cm}$.
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Submitted 10 March, 2019; v1 submitted 10 January, 2019;
originally announced January 2019.
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Prototype Analog Front-end for Negative-ion Gas and Dual-phase Liquid-Ar TPCs
Authors:
Miki Nakazawa,
Tetsuichi Kishishita,
Masayoshi Shoji,
Ken Sakashita,
Tomonori Ikeda,
Hirohisa Ishiura,
James B. R. Battat,
Catherine Nicoloff,
Manobu M. Tanaka,
Takuya Hasegawa,
Kentaro Miuchi
Abstract:
We report on the recent development of a versatile analog front-end compatible with a negative-ion $μ$-TPC for a directional dark matter search as well as a dual-phase, next-generation $\mathcal{O}$(10~kt) liquid argon TPC to study neutrino oscillations, nucleon decay, and astrophysical neutrinos. Although the operating conditions for negative-ion and liquid argon TPCs are quite different (room te…
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We report on the recent development of a versatile analog front-end compatible with a negative-ion $μ$-TPC for a directional dark matter search as well as a dual-phase, next-generation $\mathcal{O}$(10~kt) liquid argon TPC to study neutrino oscillations, nucleon decay, and astrophysical neutrinos. Although the operating conditions for negative-ion and liquid argon TPCs are quite different (room temperature \textit{vs.} $\sim$88~K operation, respectively), the readout electronics requirements are similar. Both require a wide-dynamic range up to 1600 fC, and less than 2000--5000 e$^-$ noise for a typical signal of 80 fC with a detector capacitance of $C_{\rm det} \approx 300$~pF. In order to fulfill such challenging requirements, a prototype ASIC was newly designed using 180-nm CMOS technology. Here, we report on the performance of this ASIC, including measurements of shaping time, dynamic range, and equivalent noise charge (ENC). We also demonstrate the first operation of this ASIC on a low-pressure negative-ion $μ$-TPC.
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Submitted 8 January, 2019;
originally announced January 2019.
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A 4 tonne demonstrator for large-scale dual-phase liquid argon time projection chambers
Authors:
B. Aimard,
Ch. Alt,
J. Asaadi,
M. Auger,
V. Aushev,
D. Autiero,
M. M. Badoi,
A. Balaceanu,
G. Balik,
L. Balleyguier,
E. Bechetoille,
D. Belver,
A. M. Blebea-Apostu,
S. Bolognesi,
S. Bordoni,
N. Bourgeois,
B. Bourguille,
J. Bremer,
G. Brown,
G. Brunetti,
L. Brunetti,
D. Caiulo,
M. Calin,
E. Calvo,
M. Campanelli
, et al. (147 additional authors not shown)
Abstract:
A 10 kilo-tonne dual-phase liquid argon TPC is one of the detector options considered for the Deep Underground Neutrino Experiment (DUNE). The detector technology relies on amplification of the ionisation charge in ultra-pure argon vapour and oers several advantages compared to the traditional single-phase liquid argon TPCs. A 4.2 tonne dual-phase liquid argon TPC prototype, the largest of its kin…
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A 10 kilo-tonne dual-phase liquid argon TPC is one of the detector options considered for the Deep Underground Neutrino Experiment (DUNE). The detector technology relies on amplification of the ionisation charge in ultra-pure argon vapour and oers several advantages compared to the traditional single-phase liquid argon TPCs. A 4.2 tonne dual-phase liquid argon TPC prototype, the largest of its kind, with an active volume of 3x1x1 $m^3$ has been constructed and operated at CERN. In this paper we describe in detail the experimental setup and detector components as well as report on the operation experience. We also present the first results on the achieved charge amplification, prompt scintillation and electroluminescence detection, and purity of the liquid argon from analyses of a collected sample of cosmic ray muons.
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Submitted 19 October, 2018; v1 submitted 8 June, 2018;
originally announced June 2018.
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Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process
Authors:
B. Hiti,
V. Cindro,
A. Gorišek,
T. Hemperek,
T. Kishishita,
G. Kramberger,
H. Krüger,
I. Mandić,
M. Mikuž,
N. Wermes,
M. Zavrtanik
Abstract:
Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiat…
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Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiation. In this article we present results of an extensive irradiation hardness study with neutrons up to a fluence of 1x10e16 neq/cm2. Charge collection in a passive pixelated structure was measured by Edge Transient Current Technique (E-TCT). The evolution of the effective space charge concentration was found to be compliant with the acceptor removal model, with the minimum of the space charge concentration being reached after 5x10e14 neq/cm2. An investigation of the in-pixel uniformity of the detector response revealed parasitic charge collection by the epitaxial silicon layer characteristic for the SOI design. The results were backed by a numerical simulation of charge collection in an equivalent detector layout.
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Submitted 26 October, 2017; v1 submitted 23 January, 2017;
originally announced January 2017.
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A Monolithic active pixel sensor for ionizing radiation using a 180nm HV-SOI process
Authors:
Tomasz Hemperek,
Tetsuichi Kishishita,
Hans Krüger,
Norbert Wermes
Abstract:
An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection laye…
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An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry witch mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.
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Submitted 23 February, 2015; v1 submitted 12 December, 2014;
originally announced December 2014.
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DMAPS: a fully depleted monolithic active pixel sensor - analog performance characterization
Authors:
Miroslav Havránek,
Tomasz Hemperek,
Hans Krüger,
Yunan Fu,
Leonard Germic,
Tetsuichi Kishishita,
Theresa Obermann,
Norbert Wermes
Abstract:
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $μ$m) in which charge is collected on an electrode, albeit by disordered and slow diffusion rather than by drift in a directed electric field. As a consequence, the signal is small ($\approx$ 1000 e$^-$) and the radiation tolerance is much belo…
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Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $μ$m) in which charge is collected on an electrode, albeit by disordered and slow diffusion rather than by drift in a directed electric field. As a consequence, the signal is small ($\approx$ 1000 e$^-$) and the radiation tolerance is much below the LHC requirements by factors of 100 to 1000. In this paper we present the development of a fully Depleted Monolithic Active Pixel Sensors (DMAPS) based on a high resistivity substrate allowing the creation of a fully depleted detection volume. This concept overcomes the inherent limitations of charge collection by diffusion in the standard MAPS designs. We present results from a test chip EPCB01 designed in a commercial 150 nm CMOS technology. The technology provides a thin (50 $μ$m) high resistivity n-type silicon substrate as well as an additional deep p-well which allows to integrate full CMOS circuitry inside the pixel. Different matrix types with several variants of collection electrodes have been implemented. Measurements of the analog performance of this first implementation of DMAPS pixels will be presented.
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Submitted 2 July, 2014;
originally announced July 2014.
