Showing 1–8 of 8 results for author: Kopas, C

Precision frequency tuning of tunable transmon qubits using alternating-bias assisted annealing

Authors: Xiqiao Wang, Joel Howard, Eyob A. Sete, Greg Stiehl, Cameron Kopas, Stefano Poletto, Xian Wu, Mark Field, Nicholas Sharac, Christopher Eckberg, Hilal Cansizoglu, Raja Katta, Josh Mutus, Andrew Bestwick, Kameshwar Yadavalli, David P. Pappas

Abstract: Superconducting quantum processors are one of the leading platforms for realizing scalable fault-tolerant quantum computation (FTQC). The recent demonstration of post-fabrication tuning of Josephson junctions using alternating-bias assisted annealing (ABAA) technique and a reduction in junction loss after ABAA illuminates a promising path towards precision tuning of qubit frequency while maintaini… ▽ More Superconducting quantum processors are one of the leading platforms for realizing scalable fault-tolerant quantum computation (FTQC). The recent demonstration of post-fabrication tuning of Josephson junctions using alternating-bias assisted annealing (ABAA) technique and a reduction in junction loss after ABAA illuminates a promising path towards precision tuning of qubit frequency while maintaining high coherence. Here, we demonstrate precision tuning of the maximum $|0\rangle\rightarrow |1\rangle$ transition frequency ($f_{01}^{\rm max}$) of tunable transmon qubits by performing ABAA at room temperature using commercially available test equipment. We characterize the impact of junction relaxation and aging on resistance spread after tuning, and demonstrate a frequency equivalent tuning precision of 7.7 MHz ($0.17\%$) based on targeted resistance tuning on hundreds of qubits, with a resistance tuning range up to $18.5\%$. Cryogenic measurements on tuned and untuned qubits show evidence of improved coherence after ABAA with no significant impact on tunability. Despite a small global offset, we show an empirical $f_{01}^{\rm max}$ tuning precision of 18.4 MHz by tuning a set of multi-qubit processors targeting their designed Hamiltonians. We experimentally characterize high-fidelity parametric resonance iSWAP gates on two ABAA-tuned 9-qubit processors with fidelity as high as $99.51\pm 0.20\%$. On the best-performing device, we measured across the device a median fidelity of $99.22\%$ and an average fidelity of $99.13\pm 0.12 \%$. Yield modeling analysis predicts high detuning-edge-yield using ABAA beyond the 1000-qubit scale. These results demonstrate the cutting-edge capability of frequency targeting using ABAA and open up a new avenue to systematically improving Hamiltonian targeting and optimization for scaling high-performance superconducting quantum processors. △ Less

Submitted 8 July, 2024; originally announced July 2024.

Formation and Microwave Losses of Hydrides in Superconducting Niobium Thin Films Resulting from Fluoride Chemical Processing

Authors: Carlos G. Torres-Castanedo, Dominic P. Goronzy, Thang Pham, Anthony McFadden, Nicholas Materise, Paul Masih Das, Matthew Cheng, Dmitry Lebedev, Stephanie M. Ribet, Mitchell J. Walker, David A. Garcia-Wetten, Cameron J. Kopas, Jayss Marshall, Ella Lachman, Nikolay Zhelev, James A. Sauls, Joshua Y. Mutus, Corey Rae H. McRae, Vinayak P. Dravid, Michael J. Bedzyk, Mark C. Hersam

Abstract: Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potenti… ▽ More Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potentially negatively impacting microwave loss performance. Here, we present comprehensive materials characterization of Nb hydrides formed in Nb thin films as a function of fluoride chemical treatments. In particular, secondary-ion mass spectrometry, X-ray scattering, and transmission electron microscopy reveal the spatial distribution and phase transformation of Nb hydrides. The rate of hydride formation is determined by the fluoride solution acidity and the etch rate of Nb2O5, which acts as a diffusion barrier for hydrogen into Nb. The resulting Nb hydrides are detrimental to Nb superconducting properties and lead to increased power-independent microwave loss in coplanar waveguide resonators. However, Nb hydrides do not correlate with two-level system loss or device aging mechanisms. Overall, this work provides insight into the formation of Nb hydrides and their role in microwave loss, thus guiding ongoing efforts to maximize coherence time in superconducting quantum devices. △ Less

Submitted 5 April, 2024; originally announced April 2024.

Alternating Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions

Authors: David P. Pappas, Mark Field, Cameron Kopas, Joel A. Howard, Xiqiao Wang, Ella Lachman, Lin Zhou, Jinsu Oh, Kameshwar Yadavalli, Eyob A. Sete, Andrew Bestwick, Matthew J. Kramer, Joshua Y. Mutus

Abstract: We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater than 70%, can be achieved. The rate of resistance change is shown to be strongl… ▽ More We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater than 70%, can be achieved. The rate of resistance change is shown to be strongly temperature-dependent, and is independent of junction size in the sub-micron regime. In order to measure their tunneling properties at mK temperatures, we characterized transmon qubit junctions treated with this alternating-bias assisted annealing (ABAA) technique. The measured frequencies follow the Ambegaokar-Baratoff relation between the shifted resistance and critical current. Further, these studies show a reduction of junction-contributed loss on the order of $\approx 2 \times10^{-6}$, along with a significant reduction in resonant- and off-resonant-two level system defects when compared to untreated samples. Imaging with high-resolution TEM shows that the barrier is still predominantly amorphous with a more uniform distribution of aluminum coordination across the barrier relative to untreated junctions. This new approach is expected to be widely applicable to a broad range of devices that rely on amorphous aluminum oxide, as well as the many other metal-insulator-metal structures used in modern electronics. △ Less

Submitted 26 February, 2024; v1 submitted 14 January, 2024; originally announced January 2024.

Disentangling the sources of ionizing radiation in superconducting qubits

Authors: L. Cardani, I. Colantoni, A. Cruciani, F. De Dominicis, G. D'Imperio, M. Laubenstein, A. Mariani, L. Pagnanini, S. Pirro, C. Tomei, N. Casali, F. Ferroni, D. Frolov, L. Gironi, A. Grassellino, M. Junker, C. Kopas, E. Lachman, C. R. H. McRae, J. Mutus, M. Nastasi, D. P. Pappas, R. Pilipenko, M. Sisti, V. Pettinacci , et al. (5 additional authors not shown)

Abstract: Radioactivity was recently discovered as a source of decoherence and correlated errors for the real-world implementation of superconducting quantum processors. In this work, we measure levels of radioactivity present in a typical laboratory environment (from muons, neutrons, and gamma's emitted by naturally occurring radioactive isotopes) and in the most commonly used materials for the assembly an… ▽ More Radioactivity was recently discovered as a source of decoherence and correlated errors for the real-world implementation of superconducting quantum processors. In this work, we measure levels of radioactivity present in a typical laboratory environment (from muons, neutrons, and gamma's emitted by naturally occurring radioactive isotopes) and in the most commonly used materials for the assembly and operation of state-of-the-art superconducting qubits. We develop a GEANT-4 based simulation to predict the rate of impacts and the amount of energy released in a qubit chip from each of the mentioned sources. We finally propose mitigation strategies for the operation of next-generation qubits in a radio-pure environment. △ Less

Submitted 24 November, 2022; originally announced November 2022.

Contactless Excitation of Acoustic Resonance in Insulating Wafers

Authors: Gan Zhai, Yizhou Xin, Cameron J. Kopas, Ella Lachman, Mark Field, Josh Y. Mutus, Katarina Cicak, Jose Aumentado, Zuhawn Sung, William P. Halperin

Abstract: Contactless excitation and detection of high harmonic acoustic overtones in a thin insulator single crystal are described using radio frequency spectroscopy techniques. Single crystal [001] silicon wafer samples were investigated, one side covered with a Nb thin film, the common starting point for fabrication of quantum devices. The coupling between electromagnetic signals and mechanical oscillati… ▽ More Contactless excitation and detection of high harmonic acoustic overtones in a thin insulator single crystal are described using radio frequency spectroscopy techniques. Single crystal [001] silicon wafer samples were investigated, one side covered with a Nb thin film, the common starting point for fabrication of quantum devices. The coupling between electromagnetic signals and mechanical oscillation is achieved from the Lorentz force generated by an external magnetic field. This method is suitable for any sample with a metallic surface or covered with a thin metal film. High resolution measurements of the temperature dependence of the sound velocity and elastic constants of silicon are reported and compared with known results. △ Less

Submitted 21 September, 2022; v1 submitted 25 July, 2022; originally announced July 2022.

Comments: 4 pages, 5 figures

Simple coplanar waveguide resonator mask targeting metal-substrate interface

Authors: Cameron J. Kopas, Ella Lachman, Corey Rae H. McRae, Yuvraj Mohan, Josh Y. Mutus, Ani Nersisyan, Amrit Poudel

Abstract: This white paper presents a single-layer mask, found at https://github.com/Boulder-Cryogenic-Quantum-Testbed/simple-resonator-mask. It is designed for fabrication of superconducting microwave resonators towards 1:1 comparisons of dielectric losses from the metal-substrate interface. Finite-element electromagnetic simulations are used to determine participation ratios of the four major regions of t… ▽ More This white paper presents a single-layer mask, found at https://github.com/Boulder-Cryogenic-Quantum-Testbed/simple-resonator-mask. It is designed for fabrication of superconducting microwave resonators towards 1:1 comparisons of dielectric losses from the metal-substrate interface. Finite-element electromagnetic simulations are used to determine participation ratios of the four major regions of the on-chip devices, as well as to confirm lack of crosstalk between neighboring devices and demonstrate coupling tunability over three orders of magnitude. This mask is intended as an open-source community resource for facilitating precise and accurate comparisons of materials in the single-photon, millikelvin regime. △ Less

Submitted 14 April, 2022; originally announced April 2022.

TOF-SIMS Analysis of Decoherence Sources in Nb Superconducting Resonators

Authors: Akshay A. Murthy, Jae-Yel Lee, Cameron Kopas, Matthew J. Reagor, Anthony P. McFadden, David P. Pappas, Mattia Checchin, Anna Grassellino, Alexander Romanenko

Abstract: Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of $μみゅー$s, material quality and interfacial structures continue to curb device performance. When niobium is deploye… ▽ More Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of $μみゅー$s, material quality and interfacial structures continue to curb device performance. When niobium is deployed as the superconducting material, two-level system defects in the thin film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry (TOF-SIMS) to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated by Rigetti Computing and at the National Institute of Standards and Technology through slight variations in the processing and vacuum conditions. We find that when Nb film is sputtered onto the Si substrate, oxide and silicide regions are generated at various interfaces. We also observe that impurity species such as niobium hydrides and carbides are incorporated within the niobium layer during the subsequent lithographic patterning steps. The formation of these resistive compounds likely impact the superconducting properties of the Nb thin film. Additionally, we observe the presence of halogen species distributed throughout the patterned thin films. We conclude by hypothesizing the source of such impurities in these structures in an effort to intelligently fabricate superconducting qubits and extend coherence times moving forward. △ Less

Submitted 30 August, 2021; originally announced August 2021.

Comments: 7 pages, 4 figures

Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures

Authors: Cameron J. Kopas, Justin Gonzales, Shengke Zhang, Daniel R. Queen, Brian Wagner, Mac Robinson, James Huffman, Nate Newman

Abstract: Our study shows that deposited Ge and Si dielectric thin-films can exhibit low microwave losses at near single-photon powers and sub-Kelvin temperatures ($\approx$40 mK). This low loss enables their use in a wide range of devices, including low-loss coplanar, microstrip, and stripline resonators, as well as layers for device isolation, inter-wiring dielectrics, and passivation in microwave and Jos… ▽ More Our study shows that deposited Ge and Si dielectric thin-films can exhibit low microwave losses at near single-photon powers and sub-Kelvin temperatures ($\approx$40 mK). This low loss enables their use in a wide range of devices, including low-loss coplanar, microstrip, and stripline resonators, as well as layers for device isolation, inter-wiring dielectrics, and passivation in microwave and Josephson junction circuit fabrication. We use coplanar microwave resonator structures with narrow trace widths of 2-16 $μみゅー\textrm{m}$ to maximize the sensitivity of loss tangent measurements to the interface and properties of the deposited dielectrics, rather than to optimize the quality factor. In this configuration, thermally-evaporated $\approx 1 μみゅー\textrm{m}$ thick amorphous germanium (a-Ge) films deposited on Si (100) have a single photon loss tangent of $1-2\times10^{-6}$ and, $9 μみゅー\textrm{m}$-thick chemical vapor deposited (CVD) homoepitaxial Si has a single photon loss tangent of $0.6-2\times 10^{-5}$. Interface contamination limits the loss in these devices. △ Less

Submitted 6 April, 2021; v1 submitted 19 November, 2020; originally announced November 2020.