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Periodic domain inversion in single crystal barium titanate-on-insulator thin film
Authors:
Pragati Aashna,
Hong-Lin Lin,
Yu Cao,
Yuhui Yin,
Yuan Gao,
Sakthi Sanjeev Mohanraj,
Di Zhu,
Aaron Danner
Abstract:
We report experimentally achieving first-ever electric field periodic poling of single crystal barium titanate (BTO, or BaTiO3) thin film on insulator. Owing to the outstanding optical nonlinearities of BTO, this result is a key step towards achieving quasi-phase-matching in BTO. We first grow the BTO thin film on a dysprosium scandate substrate using pulsed laser deposition with a thin layer of s…
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We report experimentally achieving first-ever electric field periodic poling of single crystal barium titanate (BTO, or BaTiO3) thin film on insulator. Owing to the outstanding optical nonlinearities of BTO, this result is a key step towards achieving quasi-phase-matching in BTO. We first grow the BTO thin film on a dysprosium scandate substrate using pulsed laser deposition with a thin layer of strontium ruthenate later serving as the bottom electrode for poling. We present characterization of the BTO thin film using x-ray diffraction and piezo-response force microscopy to clearly demonstrate single crystal, single domain growth of the film which enables the desired periodic poling. To investigate the poling quality, we apply both non-destructive piezo force response microscopy and destructive etching-assisted scanning electron microscopy and we show that high quality, uniform and intransient poling with 50 % duty cycle and periods ranging from 2 μm to 10 μm is achieved. The successful realization of periodic poling in BTO thin film unlocks the potential for highly efficient nonlinear processes under quasi-phase-matching that seemed far-fetched with prior polycrystalline BTO thin films which predominantly relied on efficiency-limited random or non-phase matching conditions and is a key step towards integration of BTO photonic devices.
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Submitted 1 July, 2024;
originally announced July 2024.
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Efficient photon-pair generation in layer-poled lithium niobate nanophotonic waveguides
Authors:
Xiaodong Shi,
Sakthi Sanjeev Mohanraj,
Veerendra Dhyani,
Angela Anna Baiju,
Sihao Wang,
Jiapeng Sun,
Lin Zhou,
Anna Paterova,
Victor Leong,
Di Zhu
Abstract:
Integrated photon-pair sources are crucial for scalable photonic quantum systems. Thin-film lithium niobate is a promising platform for on-chip photon-pair generation through spontaneous parametric down-conversion (SPDC). However, the device implementation faces practical challenges. Periodically poled lithium niobate (PPLN), despite enabling flexible quasi-phase matching, suffers from poor fabric…
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Integrated photon-pair sources are crucial for scalable photonic quantum systems. Thin-film lithium niobate is a promising platform for on-chip photon-pair generation through spontaneous parametric down-conversion (SPDC). However, the device implementation faces practical challenges. Periodically poled lithium niobate (PPLN), despite enabling flexible quasi-phase matching, suffers from poor fabrication reliability and device repeatability, while conventional modal phase matching (MPM) methods yield limited efficiencies due to inadequate mode overlaps. Here, we introduce a layer-poled lithium niobate (LPLN) nanophotonic waveguide for efficient photon-pair generation. It leverages layer-wise polarity inversion through electrical poling to break spatial symmetry and significantly enhance nonlinear interactions for MPM, achieving a notable normalized second-harmonic generation (SHG) conversion efficiency of 4615% W^{-1}cm^{-2}. Through a cascaded SHG and SPDC process, we demonstrate photon-pair generation with a normalized brightness of 3.1*10^6 Hz nm^{-1} mW^{-2} in a 3.3 mm long LPLN waveguide, surpassing existing on-chip sources under similar operating configurations. Crucially, our LPLN waveguides offer enhanced fabrication reliability and reduced sensitivity to geometric variations and temperature fluctuations compared to PPLN devices. We expect LPLN to become a promising solution for on-chip nonlinear wavelength conversion and non-classical light generation, with immediate applications in quantum communication, networking, and on-chip photonic quantum information processing.
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Submitted 17 May, 2024;
originally announced May 2024.
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CMOS-compatible photonic integrated circuits on thin-film ScAlN
Authors:
Sihao Wang,
Veerendra Dhyani,
Sakthi Sanjeev Mohanraj,
Xiaodong Shi,
Binni Varghese,
Wing Wai Chung,
Ding Huang,
Zhi Shiuh Lim,
Qibin Zeng,
Huajun Liu,
Xianshu Luo,
Victor Leong,
Nanxi Li,
Di Zhu
Abstract:
Scandium aluminum nitride (ScAlN) has recently emerged as an attractive material for integrated photonics due to its favorable nonlinear optical properties and compatibility with CMOS fabrication. Despite the promising and versatile material properties, it is still an outstanding challenge to realize low-loss photonic circuits on thin-film ScAlN-on-insulator wafers. Here, we present a systematic s…
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Scandium aluminum nitride (ScAlN) has recently emerged as an attractive material for integrated photonics due to its favorable nonlinear optical properties and compatibility with CMOS fabrication. Despite the promising and versatile material properties, it is still an outstanding challenge to realize low-loss photonic circuits on thin-film ScAlN-on-insulator wafers. Here, we present a systematic study on the material quality of sputtered thin-film ScAlN produced in a CMOS-compatible 200 mm line, and an optimized fabrication process to yield 400 nm thick, fully etched waveguides. With surface polishing and annealing, we achieve micro-ring resonators with an intrinsic quality factor as high as $1.47\times 10^5$, corresponding to a propagation loss of 2.4 dB/cm. These results serve as a critical step towards developing future large-scale, low-loss photonic integrated circuits based on ScAlN.
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Submitted 11 June, 2024; v1 submitted 21 March, 2024;
originally announced March 2024.
