Purcell enhancement of silicon W centers in circular Bragg grating cavities
Authors:
Baptiste Lefaucher,
Jean-Baptiste Jager,
Vincent Calvo,
Félix Cache,
Alrik Durand,
Vincent Jacques,
Isabelle Robert-Philip,
Guillaume Cassabois,
Yoann Baron,
Frédéric Mazen,
Sébastien Kerdilès,
Shay Reboh,
Anaïs Dréau,
Jean-Michel Gérard
Abstract:
Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched single photons, practical applications require tailoring of their emission through quantum cavity effects. In this work, we perform cavity quantum el…
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Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched single photons, practical applications require tailoring of their emission through quantum cavity effects. In this work, we perform cavity quantum electrodynamics experiments with ensembles of artificial atoms embedded in silicon-on-insulator microresonators. The emitters under study, known as W color centers, are silicon tri-interstitial defects created upon self-ion implantation and thermal annealing. The resonators consist of circular Bragg grating cavities, designed for moderate Purcell enhancement ($F_p=12.5$) and efficient luminescence extraction ($η_{coll}=40\%$ for a numerical aperture of 0.26) for W centers located at the mode antinode. When the resonant frequency mode of the cavity is tuned with the zero-phonon transition of the emitters at 1218 nm, we observe a 20-fold enhancement of the zero-phonon line intensity, together with a two-fold decrease of the total relaxation time in time-resolved photoluminescence experiments. Based on finite-difference time-domain simulations, we propose a detailed theoretical analysis of Purcell enhancement for an ensemble of W centers, considering the overlap between the emitters and the resonant cavity mode. We obtain a good agreement with our experimental results assuming a quantum efficiency of $65 \pm 10 \%$ for the emitters in bulk silicon. Therefore, W centers open promising perspectives for the development of on-demand sources of single photons, harnessing cavity quantum electrodynamics in silicon photonic chips.
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Submitted 27 October, 2023;
originally announced October 2023.
Single G centers in silicon fabricated by co-implantation with carbon and proton
Authors:
Yoann Baron,
Alrik Durand,
Tobias Herzig,
Mario Khoury,
Sébastien Pezzagna,
Jan Meijer,
Isabelle Robert-Philip,
Marco Abbarchi,
Jean-Michel Hartmann,
Shay Reboh,
Jean-Michel Gérard,
Vincent Jacques,
Guillaume Cassabois,
Anaïs Dréau
Abstract:
We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables to gradually switch from large ensembles to isolated single defects, rea…
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We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables to gradually switch from large ensembles to isolated single defects, reaching areal densities of G centers down to $\sim$0.2 $μ$m$^{-2}$. Single defect creation is demonstrated by photon antibunching in intensity-correlation experiments, thus establishing our approach as a reproducible procedure for generating single artificial atoms in silicon for quantum technologies.
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Submitted 28 April, 2022;
originally announced April 2022.
