-
Characterizing Novel Indium Phosphide Pad Detectors with Focused X-ray Beams and Laboratory Tests
Authors:
Earl Almazan,
Anthony Affolder,
Ian Dyckes,
Vitaliy Fadeyev,
Michael Hance,
Manoj Jadhav,
Sungjoon Kim,
Thomas McCoy,
Jessica Metcalfe,
Jason Nielsen,
Jennifer Ott,
Luise Poley,
Taylor Shin,
Dennis Sperlich,
Anirudha V. Sumant
Abstract:
Future tracking systems in High Energy Physics experiments will require large instrumented areas with low radiation length. Crystalline silicon sensors have been used in tracking systems for decades, but are difficult to manufacture and costly to produce for large areas. We are exploring alternative sensor materials that are amenable to fast fabrication techniques used for thin film devices. Indiu…
▽ More
Future tracking systems in High Energy Physics experiments will require large instrumented areas with low radiation length. Crystalline silicon sensors have been used in tracking systems for decades, but are difficult to manufacture and costly to produce for large areas. We are exploring alternative sensor materials that are amenable to fast fabrication techniques used for thin film devices. Indium Phosphide pad sensors were fabricated at Argonne National Lab using commercially available InP:Fe 2-inch mono-crystal substrates. Current-voltage and capacitance-voltage characterizations were performed to study the basic operating characteristics of a group of sensors. Micro-focused X-ray beams at Canadian Light Source and Diamond Light Source were used to study the response to ionizing radiation, and characterize the uniformity of the response for several devices. The results show a high degree of performance uniformity in our evaluations, both within a device and between the 48 tested devices. This motivates further studies into thin film devices for future tracking detectors.
△ Less
Submitted 10 September, 2024; v1 submitted 29 May, 2024;
originally announced May 2024.
-
Novel indium phosphide charged particle detector characterization with a 120 GeV proton beam
Authors:
Sungjoon Kim,
Manoj B. Jadhav,
Vikas Berry,
Jessica E. Metcalfe,
Anirudha V. Sumant
Abstract:
Thin film detectors which incorporate semiconductor materials other than silicon have the potential to build upon their unique material properties and offer advantages such as faster response times, operation at room temperature, and radiation hardness. To explore the possibility, promising candidate materials were selected, and particle tracking detectors were fabricated. An indium phosphide dete…
▽ More
Thin film detectors which incorporate semiconductor materials other than silicon have the potential to build upon their unique material properties and offer advantages such as faster response times, operation at room temperature, and radiation hardness. To explore the possibility, promising candidate materials were selected, and particle tracking detectors were fabricated. An indium phosphide detector with a metal-insulator-metal (MIM) structure has been fabricated for particle tracking. The detector was tested using radioactive sources and a high energy proton beam at Fermi National Accelerator Laboratory. In addition to its simplistic design and fabrication process, the indium phosphide particle detector showed a very fast response time of hundreds of picoseconds for the 120 GeV protons, which are comparable to the ultra-fast silicon detectors. This fast-timing response is attributed to the high electron mobility of indium phosphide. Such material properties can be leveraged to build novel detectors with superlative performance.
△ Less
Submitted 18 April, 2024;
originally announced April 2024.
-
Thin Film Charged Particle Trackers
Authors:
Sungjoon Kim,
Vikas Berry,
Jessica Metcalfe,
Anirudha V. Sumant
Abstract:
Silicon tracking detectors have grown to cover larger surface areas up to hundreds of square meters, and are even taking over other sub-detectors, such as calorimeters. However, further improvements in tracking detector performance are more likely to arise from the ability to make a low mass detector comprised of a high ratio of active sensor to dead materials, where dead materials include electri…
▽ More
Silicon tracking detectors have grown to cover larger surface areas up to hundreds of square meters, and are even taking over other sub-detectors, such as calorimeters. However, further improvements in tracking detector performance are more likely to arise from the ability to make a low mass detector comprised of a high ratio of active sensor to dead materials, where dead materials include electrical services, cooling, mechanical supports, etc. In addition, the cost and time to build these detectors is currently large. Therefore, advancements in the fundamental technology of tracking detectors may need to look at a more transformative approach that enables extremely large area coverage with minimal dead material and is easier and faster to build. The advancement of thin film fabrication techniques has the potential to revolutionize the next-to-next generation of particle detector experiments. Some thin film deposition techniques have already been developed and widely used in the industry to make LED screens for TV's and monitors. If large area thin film detectors on the order of several square meters can be fabricated with similar performance as current silicon technologies, they could be used in future particle physics experiments. This paper aims to review the key fundamental performance criteria of existing silicon detectors and past research to use thin films and other semi-conductor materials as particle detectors in order to explore the important considerations and challenges to pursue thin film detectors.
△ Less
Submitted 16 September, 2022;
originally announced September 2022.
-
Demonstration of Planar Ultrananocrystalline Diamond Field Emission Source Operating in SRF Injector at 2 Kelvin
Authors:
Sergey V. Baryshev,
Erdong Wang,
Chunguang Jing,
Vadim Jabotinski,
Sergey Antipov,
Alexei D. Kanareykin,
Sergey Belomestnykh,
Ilan Ben-Zvi,
Lizhi Chen,
Qiong Wu,
Hao Li,
Anirudha V. Sumant
Abstract:
Reported here is the first demonstration of electron beam generation in an SRF TESLA 1.3 GHz gun equipped with field emission cathode when operated at 2 Kelvin. The cathode is submicron film of nitrogen-incorporated ultrananocrystalline diamond [(N)UNCD] deposited atop a Nb RRR300 cathode plug. The output current was measured to increase exponentially as a function of the cavity gradient. Our resu…
▽ More
Reported here is the first demonstration of electron beam generation in an SRF TESLA 1.3 GHz gun equipped with field emission cathode when operated at 2 Kelvin. The cathode is submicron film of nitrogen-incorporated ultrananocrystalline diamond [(N)UNCD] deposited atop a Nb RRR300 cathode plug. The output current was measured to increase exponentially as a function of the cavity gradient. Our results demonstrate a feasible path toward simplified fully cryogenic SRF injector technology. One important finding is that the electron emitter made of (N)UNCD, a material long been known as a highly efficient field emission material, demonstrated a record low turn-on gradient of 0.6 MV/m. A hypothesis explaining this behavior is proposed.
△ Less
Submitted 20 March, 2020;
originally announced March 2020.
-
Transfer of Graphene with Protective Oxide Layers
Authors:
H. Grebel,
L. Stan,
A. V. Sumant,
Y. Liu,
D. Gosztola,
L. Ocola,
B. Fisher
Abstract:
Transfer of graphene, grown by Chemical Vapor Deposition (CVD), to a substrate of choice, typically involves deposition of a polymeric layer (typically, poly(methyl methacrylate, PMMA or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving some residues behind. Here we study a transfer of graphene with a protective thin oxide layer. The thin oxide layer is grown by…
▽ More
Transfer of graphene, grown by Chemical Vapor Deposition (CVD), to a substrate of choice, typically involves deposition of a polymeric layer (typically, poly(methyl methacrylate, PMMA or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving some residues behind. Here we study a transfer of graphene with a protective thin oxide layer. The thin oxide layer is grown by Atomic Deposition Layer (ALD) on the graphene right after the growth stage on Cu foils. One can further aid the oxide-graphene transfer by depositing a very thin polymer layer on top of the composite (much thinner than the usual thickness) following by a more aggressive polymeric removal methods, thus leaving the graphene intact. We report on the nucleation growth process of alumina and hafnia films on the graphene, their resulting strain and on their optical transmission. We suggest that hafnia is a better oxide to coat the graphene than alumina in terms of uniformity and defects.
△ Less
Submitted 8 June, 2018; v1 submitted 22 January, 2018;
originally announced January 2018.
-
Life-time and line-width of individual quantum dots interfaced with graphene
Authors:
Xin Miao,
David J. Gosztola,
Anirudha V. Sumant,
Haim Grebel
Abstract:
We report on the luminescence's life-time and line-width from an array of individual quantum dots; these were interfaced with graphene surface guides or dispersed on a metal film. Our results are consistent with screening by charge carriers. Fluorescence quenching is typically mentioned as a sign that chromophores are interfacing a conductive surface; we found that QD interfaced with conductive la…
▽ More
We report on the luminescence's life-time and line-width from an array of individual quantum dots; these were interfaced with graphene surface guides or dispersed on a metal film. Our results are consistent with screening by charge carriers. Fluorescence quenching is typically mentioned as a sign that chromophores are interfacing a conductive surface; we found that QD interfaced with conductive layers exhibited shorter life-time and line-broadening but not necessarily fluorescence quenching as the latter may be impacted by molecular concentration, reflectivity and conductor imperfections. We also comment on selective life-time measurements, which, we postulate depend on the specifics of the local density-of-states involved.
△ Less
Submitted 26 December, 2017;
originally announced December 2017.
-
Nano-Diamond Thin Film Field Emitter Cartridge for Miniature High Gradient Radiofrequency $X$-band Electron Injector
Authors:
Jiaqi Qiu,
Stanislav S. Baturin,
Kiran K. Kovi,
Oksana Chubenko,
Gongxiaohui Chen,
Richard Konecny,
Sergey Antipov,
Chunguang Jing,
Anirudha V. Sumant,
Sergey V. Baryshev
Abstract:
The complete design, fabrication, and performance evaluation of a compact, single cell, $X$-band ($\sim$9 GHz) electron injector based on a field emission cathode (FEC) are presented. A pulsed electron beam is generated by a 10's of kW radiofrequency (RF) magnetron signal from a plug-in thin film nitrogen-incorporated ultrananocrystalline diamond (N)UNCD FEC cartridge. Testing of the $X$-band inje…
▽ More
The complete design, fabrication, and performance evaluation of a compact, single cell, $X$-band ($\sim$9 GHz) electron injector based on a field emission cathode (FEC) are presented. A pulsed electron beam is generated by a 10's of kW radiofrequency (RF) magnetron signal from a plug-in thin film nitrogen-incorporated ultrananocrystalline diamond (N)UNCD FEC cartridge. Testing of the $X$-band injector with the (N)UNCD FEC was conducted in a beamline equipped with a solenoid, Faraday cup and imaging screen. The results show that typically the (N)UNCD FEC cartridge produces $\gtrsim$1 mA/cm$^2$ at a surface electric field of 28 MV/m. The diameter of the output beam generated from the 4.4 mm diameter (N)UNCD cartridge can be as small as 1 mm. In terms of its practical applications, the demonstrated $X$-band electron injector with the (N)UNCD plug-in FEC can serve as a source for X-ray generation, materials processing, travelling-wave tubes (including GHz and THz backward wave oscillators), or can be used to drive slow-wave accelerating structures. The results presented also suggest that this field emitter technology based on planar (N)UNCD thin films, which are simply grown on the surface of optically polished stainless steel, can enable a vast number of device configurations that are efficient, flexible in design, and can be packaged with ease.
△ Less
Submitted 5 October, 2017;
originally announced October 2017.
-
Planar Ultrananocrystalline Diamond Field Emitter in Accelerator RF Electron Injector: Performance Metrics
Authors:
Sergey V. Baryshev,
Sergey Antipov,
Jiahang Shao,
Chunguang Jing,
Kenneth J. Pérez Quintero,
Jiaqi Qui,
Wanming Liu,
Wei Gai,
Alexei D. Kanareykin,
Anirudha V. Sumant
Abstract:
A case performance study of a planar field emission cathode (FEC) based on nitrogen-incorporated ultrananocrystalline diamond, (N)UNCD, was carried out in an RF 1.3 GHz electron gun. The FEC was a 100 nm (N)UNCD film grown on a 20 mm diameter stainless steel disk with a Mo buffer layer. At surface gradients 45-65 MV/m, peak currents of 1-80 mA (equivalent to 0.3-25 mA/cm$^2$) were achieved. Imagin…
▽ More
A case performance study of a planar field emission cathode (FEC) based on nitrogen-incorporated ultrananocrystalline diamond, (N)UNCD, was carried out in an RF 1.3 GHz electron gun. The FEC was a 100 nm (N)UNCD film grown on a 20 mm diameter stainless steel disk with a Mo buffer layer. At surface gradients 45-65 MV/m, peak currents of 1-80 mA (equivalent to 0.3-25 mA/cm$^2$) were achieved. Imaging with two YAG screens confirmed emission from the (N)UNCD surface with (1) the beam emittance of 1.5 mm$\times$mrad/mm-rms, and (2) longitudinal FWHM and rms energy spread of 0.7% and 11% at an electron energy of 2 MeV. Current stability was tested over the course of 36$\times$10$^3$ RF pulses (equivalent to 288$\times$10$^6$ GHz oscillations).
△ Less
Submitted 21 October, 2014;
originally announced October 2014.