Accelerating quantum materials development with advances in transmission electron microscopy
Authors:
Parivash Moradifar,
Yin Liu,
Jiaojian Shi,
Matti Lawton Siukola Thurston,
Hendrik Utzat,
Tim B. van Driel,
Aaron M. Lindenberg,
Jennifer A. Dionne
Abstract:
Quantum materials are driving a technology revolution in sensing, communication, and computing, while simultaneously testing many core theories of the past century. Materials such as topological insulators, complex oxides, quantum dots, color center hosting semiconductors, and other types of strongly correlated materials can exhibit exotic properties such as edge conductivity, multiferroicity, mag…
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Quantum materials are driving a technology revolution in sensing, communication, and computing, while simultaneously testing many core theories of the past century. Materials such as topological insulators, complex oxides, quantum dots, color center hosting semiconductors, and other types of strongly correlated materials can exhibit exotic properties such as edge conductivity, multiferroicity, magnetoresistance, single photon emission, and optical-spin locking. These emergent properties arise and depend strongly on the materials detailed atomic scale structure, including atomic defects, dopants, and lattice stacking. In this review, after introduction of different classes of quantum materials and quantum excitations, we describe how progress in the field of electron microscopy, including in situ and in operando EM, can accelerate advances in quantum materials. Our review describes EM methods including: i) principles and operation modes of EM, ii) EM spectroscopies, such as electron energy loss spectroscopy, cathodoluminescence, and electron energy gain spectroscopy, iii) 4D scanning transmission electron microscopy, iv) dynamic and ultrafast EM, v) complimentary ultrafast spectroscopies, and vi) atomic electron tomography. We discuss how these methods inform structure function relations in quantum materials down to the picometer scale and femtosecond time resolution, and how they enable high resolution manipulation of quantum materials. Among numerous results, our review highlights how EM has enabled identification of the 3D structure of quantum defects, measuring reversible and metastable dynamics of quantum excitations, mapping exciton states and single photon emission, measuring nanoscale thermal transport and coupled excitation dynamics, and measuring the internal electric field of quantum heterointerfaces, all at the quantum materials intrinsic atomic and near atomic-length scale.
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Submitted 20 December, 2022;
originally announced December 2022.
Nanodiamond grain boundaries and lattice expansion drive Silicon vacancy emission heterogeneity
Authors:
Daniel K. Angell,
Shuo Li,
Hendrik Utzat,
Matti L. S. Thurston,
Yin Liu,
Jeremy Dahl,
Robert Carlson,
Zhi-Xun Shen,
Robert Sinclair,
Nicholas Melosh,
Jennifer A. Dionne
Abstract:
Silicon-vacancy (SiV$^-$) centers in diamond are promising candidates as sources of single-photons in quantum networks due to their minimal phonon coupling and narrow optical linewidths. Correlating SiV$^-$ emission with the defect's atomic-scale structure is important for controlling and optimizing quantum emission, but remains an outstanding challenge. Here, we use cathodoluminescence imaging in…
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Silicon-vacancy (SiV$^-$) centers in diamond are promising candidates as sources of single-photons in quantum networks due to their minimal phonon coupling and narrow optical linewidths. Correlating SiV$^-$ emission with the defect's atomic-scale structure is important for controlling and optimizing quantum emission, but remains an outstanding challenge. Here, we use cathodoluminescence imaging in a scanning transmission electron microscope (STEM) to elucidate the structural sources of non-ideality in the SiV$^-$ emission from nanodiamonds with sub-nanometer-scale resolution. We show that different crystalline domains of a nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness, while near-surface SiV$^-$ emitters remain bright. We correlate these changes with local lattice expansion using 4D STEM and diffraction, and show that associated blue shifts from the ZPL are due to defect density heterogeneity, while red shifts are due to lattice distortions.
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Submitted 16 February, 2022;
originally announced February 2022.
