T-RAM - Wikipedia

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Computer memory and data storage types
General Memory cell Memory coherence Cache coherence Memory hierarchy Memory access pattern Memory map Secondary storage MOS memory floating-gate Continuous availability Areal density (computer storage) Block (data storage) Object storage Direct-attached storage Network-attached storage Storage area network Block-level storage Single-instance storage Data Structured data Unstructured data Big data Metadata Data compression Data corruption Data cleansing Data degradation Data integrity Data security Data validation Data validation and reconciliation Data recovery Storage Data cluster Directory Shared resource File sharing File system Clustered file system Distributed file system Distributed file system for cloud Distributed data store Distributed database Database Data bank Data storage Data store Data deduplication Data structure Data redundancy Replication (computing) Memory refresh Storage record Information repository Knowledge base Computer file Object file File deletion File copying Backup Core dump Hex dump Data communication Information transfer Temporary file Copy protection Digital rights management Volume (computing) Boot sector Master boot record Volume boot record Disk array Disk image Disk mirroring Disk aggregation Disk partitioning Memory segmentation Locality of reference Logical disk Storage virtualization Virtual memory Memory-mapped file Software entropy Software rot In-memory database In-memory processing Persistence (computer science) Persistent data structure RAID Non-RAID drive architectures Memory paging Bank switching Grid computing Cloud computing Cloud storage Fog computing Edge computing Dew computing Amdahl's law Moore's law Kryder's law
Volatile
RAM Hardware cache CPU cache Scratchpad memory DRAM eDRAM SDRAM SGRAM LPDDR QDRSRAM EDO DRAM XDR DRAM RDRAM DDR GDDR HBM SRAM 1T-SRAM ReRAM QRAM Content-addressable memory (CAM) Computational RAM VRAM Dual-ported RAM Video RAM (dual-ported DRAM)
Historical Williams–Kilburn tube (1946–1947) Delay-line memory (1947) Mellon optical memory (1951) Selectron tube (1952) Dekatron T-RAM (2009) Z-RAM (2002–2010)
Non-volatile
ROM Diode matrix MROM PROM EPROM EEPROM ROM cartridge Solid-state storage (SSS) Flash memory is used in: Solid-state drive (SSD) Solid-state hybrid drive (SSHD) USB flash drive IBM FlashSystem Flash Core Module Memory card Memory Stick CompactFlash PC Card MultiMediaCard SD card SIM card SmartMedia Universal Flash Storage SxS MicroP2 XQD card Programmable metallization cell
NVRAM Memistor Memristor PCM (3D XPoint) MRAM Electrochemical RAM (ECRAM) Nano-RAM CBRAM
Early-stage NVRAM FeRAM ReRAM FeFET memory
Analog recording Phonograph cylinder Phonograph record Quadruplex videotape Vision Electronic Recording Apparatus Magnetic recording Magnetic storage Magnetic tape Magnetic-tape data storage Tape drive Tape library Digital Data Storage (DDS) Videotape Videocassette Cassette tape Linear Tape-Open Betamax 8 mm video format DV MiniDV MicroMV U-matic VHS S-VHS VHS-C D-VHS Hard disk drive
Optical 3D optical data storage Optical disc LaserDisc Compact Disc Digital Audio (CDDA) CD CD Video CD-R CD-RW Video CD Super Video CD Mini CD Nintendo optical discs CD-ROM Hyper CD-ROM DVD DVD+R DVD-Video DVD card DVD-RAM MiniDVD HD DVD Blu-ray Ultra HD Blu-ray Holographic Versatile Disc WORM
In development CBRAM Racetrack memory NRAM Millipede memory ECRAM Patterned media Holographic data storage Electronic quantum holography 5D optical data storage DNA digital data storage Universal memory Time crystal Quantum memory UltraRAM
Historical Paper data storage (1725) Punched card (1725) Punched tape (1725) Plugboard Drum memory (1932) Magnetic-core memory (1949) Plated-wire memory (1957) Core rope memory (1960s) Thin-film memory (1962) Disk pack (1962) Twistor memory (~1968) Bubble memory (~1970) Floppy disk (1971)
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Thyristor RAM (T-RAM) is a type of random-access memory dating from 2009 invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high density and high speed.^{[citation needed]} This technology, which exploits the electrical property known as negative differential resistance and is called thin capacitively-coupled thyristor,^[1] is used to create memory cells capable of very high packing densities. Due to this, the memory is highly scalable, and already has a storage density that is several times higher than found in conventional 6T SRAM. It was expected that the next generation of T-RAM memory will have the same density as DRAM.^{[by whom?]}

This technology exploits the electrical property known as negative differential resistor and is characterized by the way in which its memory cells are built, combining DRAM efficiency in terms of space with that of SRAM in terms of speed. Very similar to the current 6T-SRAM, or SRAM memories with 6 cell transistors, is substantially different because the SRAM latch CMOS, consisting of 4 of the 6 transistors of each cell, is replaced by a bipolar latch PNP -NPN of a single Thyristor. The result is to significantly reduce the area occupied by each cell, thus obtaining a highly scalable memory that has already reached storage density several times higher than the current SRAM.

The Thyristor-RAM provides the best density / performance ratio available between the various integrated memories, matching the performance of an SRAM memory, but allowing 2-3 times greater storage density and lower power consumption. It is expected that the new generation of T-RAM memory will have the same storage density as DRAMs.