Leo Esaki
Leo Esaki | |
---|---|
Born | |
Nationality | Japan |
Alma mater | University of Tokyo |
Known for | electron tunneling, Esaki diode |
Awards | Stuart Ballantine Medal (1961) Nobel Prize in Physics (1973) IEEE Medal of Honor |
Scientific career | |
Fields | Applied physics |
Reona Esaki (
He is known for his invention of the Esaki diode, which exploited that phenomenon. This research was done when he was with Tokyo Tsushin Kogyo (now known as Sony). He has also contributed in being a pioneer of the semiconductor superlattice while he was with IBM.
Esaki was born on March 12, 1925 in Osaka, Japan.[2] He studied at the University of Tokyo.
References[change | change source]
- ↑ Esaki, L.; Tsu, R. (1970). "Superlattice and Negative Differential Conductivity in Semiconductors". IBM Journal of Research and Development. 14: 61–65. doi:10.1147/rd.141.0061.
- ↑ Esaki, Leo, "Long Journey into Tunneling," Nobel Lecture, Dec 12, 1973.
Other websites[change | change source]
- Leo Esaki – Biography. Retrieved Aug. 5, 2003 from http://www.nobel.se/physics/laureates/1973/esaki-bio.html Archived 2004-08-03 at the Wayback Machine
- IBM record
- IEEE History Center – Leo Esaki. Retrieved Jul. 19, 2011 from http://www.ieeeghn.org/wiki/index.php/Leo_Esaki
- Sony History – The Esaki Diode. Retrieved Aug. 5, 2003 from http://www.sony.net/Fun/SH/1-7/h5.html Archived 2003-08-04 at the Wayback Machine
- Freeview video 'An Interview with Leo Esaki' by the Vega Science Trust