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Engineering long spin coherence times of spin-orbit systems
Authors:
T. Kobayashi,
J. Salfi,
J. van der Heijden,
C. Chua,
M. G. House,
D. Culcer,
W. D. Hutchison,
B. C. Johnson,
J. C. McCallum,
H. Riemann,
N. V. Abrosimov,
P. Becker,
H. -J. Pohl,
M. Y. Simmons,
S. Rogge
Abstract:
Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($\sim1~μ$s…
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Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($\sim1~μ$s) coherence times $T_2$, while qubits with long $T_2$ have weak spin-orbit coupling making qubit coupling short-ranged and challenging for scale-up. Here we show that an intrinsic spin-orbit coupled "generalised spin" with total angular momentum $J=\tfrac{3}{2}$, which is defined by holes bound to boron dopant atoms in strained $^{28}\mathrm{Si}$, has $T_2$ rivalling the electron spins of donors and quantum dots in $^{28}\mathrm{Si}$. Using pulsed electron paramagnetic resonance, we obtain $0.9~\mathrm{ms}$ Hahn-echo and $9~\mathrm{ms}$ dynamical decoupling $T_2$ times, where strain plays a key role to reduce spin-lattice relaxation and the longitudinal electric coupling responsible for decoherence induced by electric field noise. Our analysis shows that transverse electric dipole can be exploited for electric manipulation and qubit coupling while maintaining a weak longitudinal coupling, a feature of $J=\tfrac{3}{2}$ atomic systems with a strain engineered quadrupole degree of freedom. These results establish single-atom hole spins in silicon with quantised total angular momentum, not spin, as a highly coherent platform with tuneable intrinsic spin-orbit coupling advantageous to build artificial quantum systems and couple qubits over long distances.
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Submitted 1 October, 2018; v1 submitted 28 September, 2018;
originally announced September 2018.
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Element-Specific Depth Profile of Magnetism and Stoichiometry at the La0.67Sr0.33MnO3/BiFeO3 Interface
Authors:
J. Bertinshaw,
S. Brück,
D. Lott,
H. Fritzsche,
Y. Khaydukov,
O. Soltwedel,
T. Keller,
E. Goering,
P. Audehm,
D. L. Cortie,
W. D. Hutchison,
Q. M. Ramasse,
M. Arredondo,
R. Maran,
V. Nagarajan,
F. Klose,
C. Ulrich
Abstract:
Depth-sensitive magnetic, structural and chemical characterization is important in the understanding and optimization of novel physical phenomena emerging at interfaces of transition metal oxide heterostructures. In a simultaneous approach we have used polarized neutron and resonant X-ray reflectometry to determine the magnetic profile across atomically sharp interfaces of ferromagnetic La0.67Sr0.…
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Depth-sensitive magnetic, structural and chemical characterization is important in the understanding and optimization of novel physical phenomena emerging at interfaces of transition metal oxide heterostructures. In a simultaneous approach we have used polarized neutron and resonant X-ray reflectometry to determine the magnetic profile across atomically sharp interfaces of ferromagnetic La0.67Sr0.33MnO3 / multiferroic BiFeO3 bi-layers with sub-nanometer resolution. In particular, the X-ray resonant magnetic reflectivity measurements at the Fe and Mn resonance edges allowed us to determine the element specific depth profile of the ferromagnetic moments in both the La0.67Sr0.33MnO3 and BiFeO3 layers. Our measurements indicate a magnetically diluted interface layer within the La0.67Sr0.33MnO3 layer, in contrast to previous observations on inversely deposited layers. Additional resonant X-ray reflection measurements indicate a region of an altered Mn- and O-content at the interface, with a thickness matching that of the magnetic diluted layer, as origin of the reduction of the magnetic moment.
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Submitted 2 July, 2014;
originally announced July 2014.
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A method for assigning satellite lines to crystallographic sites in rare earth crystals
Authors:
Rose L. Ahlefeldt,
Neil B. Manson,
Wayne D. Hutchison,
Matthew J. Sellars
Abstract:
We describe an experimental technique for associating the satellite lines in a rare earth optical spectrum caused by a defect with the rare earth ions in crystal sites around that defect. This method involves measuring the hyperfine splitting caused by a magnetic dipole-dipole interaction between host ions and a magnetic defect. The method was applied to Ce3+:EuCl3.6H2O to assign 13 of the outermo…
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We describe an experimental technique for associating the satellite lines in a rare earth optical spectrum caused by a defect with the rare earth ions in crystal sites around that defect. This method involves measuring the hyperfine splitting caused by a magnetic dipole-dipole interaction between host ions and a magnetic defect. The method was applied to Ce3+:EuCl3.6H2O to assign 13 of the outermost 22 satellite lines to sites. The assignments show that the optical shift of a satellite line is loosely dependent on the distance to the dopant. The interaction between host and dopant ions is purely dipole-dipole at distances greater than 7 Angstroms, with an additional contribution, likely superexchange, at distances less than 7 Angstroms.
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Submitted 5 July, 2013; v1 submitted 2 July, 2013;
originally announced July 2013.
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High-order Ho multipoles in HoB2C2 observed with soft resonant x-ray diffraction
Authors:
A. J. Princep,
A. M. Mulders,
E. Schierle,
E. Weschke,
J. Hester,
W. D. Hutchison,
Y. Tanaka,
N. Terada,
Y. Narumi,
T. Nakamura
Abstract:
Soft resonant x-ray Bragg diffraction (SRXD) at the Ho M$_{4,5}$ edges has been used to study Ho $4f$ multipoles in the combined magnetic and orbitally ordered phase of HoB$_2$C$_2$. A full description of the energy dependence for both $σ$ and $π$ incident x-rays at two different azimuthal angles, as well as the ratio $I_σ/I_π$ as a function of azimuthal angle for a selection of energies, allows a…
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Soft resonant x-ray Bragg diffraction (SRXD) at the Ho M$_{4,5}$ edges has been used to study Ho $4f$ multipoles in the combined magnetic and orbitally ordered phase of HoB$_2$C$_2$. A full description of the energy dependence for both $σ$ and $π$ incident x-rays at two different azimuthal angles, as well as the ratio $I_σ/I_π$ as a function of azimuthal angle for a selection of energies, allows a determination of the higher order multipole moments of rank 1 (dipole) to 6 (hexacontatetrapole). The Ho 4f multipole moments have been estimated, indicating a dominant hexadecapole (rank 4) order with an almost negligible influence from either the dipole or the octupole magnetic terms. The analysis incorporates both the intra-atomic magnetic and quadrupolar interactions between the 3d core and 4f valence shells as well as the interference of contributions to the scattering that behave differently under time reversal. Comparison of SRXD, neutron diffraction and non resonant x-ray diffraction shows that the magnetic and quadrupolar order parameter are distinct. The $(0 0 1/2)$ component of the magnetic order exhibits a Brillouin type increase below the orbital ordering temperature T$_Q$, while the quadrupolar order increases more sharply. We conclude the quadrupolar interaction is strong, but quadrupolar order only occurs when the magnetic order gives rise to a quasi doublet ground state, which results in a lock-in of the orbitals at T$_Q$.
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Submitted 1 December, 2011;
originally announced December 2011.
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Proceedings of the 35th Annual Australian/New Zealand Condensed Matter and Materials Meeting
Authors:
K. Radhanpura,
S. Hargreaves,
R. A. Lewis,
H. Krüger,
E. Rey,
P. -Z. Si,
T. Söhnel,
V. Jovic,
J. B. Metson,
G. I. N. Waterhouse,
A. A. Abiona,
W. J. Kemp,
A. P. Byrne,
M. C. Ridgeway,
H. Timmers,
J. D. Cashion,
W. P. Gates,
T. L. Greaves,
O. Dorjkhaidav,
E. Constable,
L. G. Gladkis,
J. M. Scarvell,
P. N. Smith,
C. J. Hamer,
O. Rojas
, et al. (20 additional authors not shown)
Abstract:
The 35th Australian/New Zealand Annual Condensed Matter and Materials Meeting was held at the Charles Sturt University campus in Wagga Wagga, NSW, Australia from the 1st to the 4th of February 2011. The conference was attended by 92 delegates from a range of universities across Australia, New Zealand and further afield.
There were a total of 9 invited and 21 contributed talks during the three da…
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The 35th Australian/New Zealand Annual Condensed Matter and Materials Meeting was held at the Charles Sturt University campus in Wagga Wagga, NSW, Australia from the 1st to the 4th of February 2011. The conference was attended by 92 delegates from a range of universities across Australia, New Zealand and further afield.
There were a total of 9 invited and 21 contributed talks during the three days of scientific sessions, as well as 2 poster sessions with a total of 49 poster presentations. All presenters were invited to submit a manuscript for publication in the conference proceedings. The length limits where six pages for invited papers and four pages for contributed papers. Each manuscript was reviewed by two anonymous referees and 18 papers were accepted for publication.
The accepted manuscripts are also available at the online publication section of the Australian Institute of Physics national web site (http://www.aip.org.au/).
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Submitted 18 July, 2011;
originally announced July 2011.
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Phosphorus Spin Coherence Times in Silicon at Very Low Temperatures
Authors:
L. K. Alexander,
N. Suwuntanasarn,
W. D. Hutchison
Abstract:
Phosphorus donor spin coherence in isotopically pure 28 silicon is measured at very low temperatures using pulsed electron spin resonance. The isolated spin T2 varies unexpectedly with phosphorus concentration
Phosphorus donor spin coherence in isotopically pure 28 silicon is measured at very low temperatures using pulsed electron spin resonance. The isolated spin T2 varies unexpectedly with phosphorus concentration
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Submitted 21 September, 2010;
originally announced September 2010.
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Electrically Detected Magnetic Resonance Applied to the Study of Near Surface Electron Donors in Silicon
Authors:
W. D. Hutchison,
P. G. Spizzirri,
F. Hoehne,
M. S. Brandt
Abstract:
Electrically detected magnetic resonance (EDMR) is applied to mm size devices with implanted leads and a 50 micron square gap laid down on bulk phosphorus doped silicon. Devices with a range of phosphorus concentrations and surface types were prepared and measured to examine the interplay between donor and charge trap states in producing EDMR signals.
Electrically detected magnetic resonance (EDMR) is applied to mm size devices with implanted leads and a 50 micron square gap laid down on bulk phosphorus doped silicon. Devices with a range of phosphorus concentrations and surface types were prepared and measured to examine the interplay between donor and charge trap states in producing EDMR signals.
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Submitted 22 February, 2010;
originally announced February 2010.
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Pulsed ESR Measurement of Coherence Times in Si:P at Very Low Temperatures
Authors:
W. D. Hutchison,
L. K. Alexander,
N. Suwuntanasarn,
G. N. Milford
Abstract:
A purpose built millikelvin pulsed x-band ESR system is used to measure spin decoherence times of phosphorus donor spins in 99.92% isotopically pure 28 silicon. The isolated P spin T2 is estimated at 260 (50) ms at 4.2 K and 330 (100) ms at 0.9 K.
A purpose built millikelvin pulsed x-band ESR system is used to measure spin decoherence times of phosphorus donor spins in 99.92% isotopically pure 28 silicon. The isolated P spin T2 is estimated at 260 (50) ms at 4.2 K and 330 (100) ms at 0.9 K.
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Submitted 22 February, 2010;
originally announced February 2010.
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ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface
Authors:
Paul G. Spizzirri,
Wayne D. Hutchison,
Nikolas Stavrias,
Jeffrey C. McCallum,
Nakorn Suwuntanasarn,
Libu K. Alexander,
Steven Prawer
Abstract:
This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which were used to estimate donor activation levels, reported high implant recoveries when using 14 keV phosphorus ions however, it was not possible to correlate the…
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This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which were used to estimate donor activation levels, reported high implant recoveries when using 14 keV phosphorus ions however, it was not possible to correlate the intensity of the hyperfine resonance signal with the electrical measurements in the presence of an SiO2 interface due to donor state ionisation (i.e. compensation effects). Comparative measurements made on silicon with an H-passivated surface reported higher donor hyperfine signal levels consistent with lower surface defect densities at the interface.
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Submitted 8 February, 2010;
originally announced February 2010.
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Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
Authors:
D. R. McCamey,
H. Huebl,
M. S. Brandt,
W. D. Hutchison,
J. C. McCallum,
R. G. Clark,
A. R. Hamilton
Abstract:
We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist of high-dose implanted metallic leads with a square gap, into which Phosphorus is implanted at a non-metallic dose corresponding to 10^17 cm^-3. By restricting this secondary implant to a 100 nm x 100 nm region, the E…
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We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist of high-dose implanted metallic leads with a square gap, into which Phosphorus is implanted at a non-metallic dose corresponding to 10^17 cm^-3. By restricting this secondary implant to a 100 nm x 100 nm region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum information processing.
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Submitted 22 May, 2006;
originally announced May 2006.
