Showing 1–23 of 23 results for author: Palacios, T

Remote-contact catalysis for target-diameter semiconducting carbon nanotube array

Authors: Jiangtao Wang, Xudong Zheng, Gregory Pitner, Xiang Ji, Tianyi Zhang, Aijia Yao, Jiadi Zhu, Tomás Palacios, Lain-Jong Li, Han Wang, Jing Kong

Abstract: Electrostatic catalysis has been an exciting development in chemical synthesis (beyond enzymes catalysis) in recent years, boosting reaction rates and selectively producing certain reaction products. Most of the studies to date have been focused on using external electric field (EEF) to rearrange the charge distribution in small molecule reactions such as Diels-Alder addition, carbene reaction, et… ▽ More Electrostatic catalysis has been an exciting development in chemical synthesis (beyond enzymes catalysis) in recent years, boosting reaction rates and selectively producing certain reaction products. Most of the studies to date have been focused on using external electric field (EEF) to rearrange the charge distribution in small molecule reactions such as Diels-Alder addition, carbene reaction, etc. However, in order for these EEFs to be effective, a field on the order of 1 V/nm (10 MV/cm) is required, and the direction of the EEF has to be aligned with the reaction axis. Such a large and oriented EEF will be challenging for large-scale implementation, or materials growth with multiple reaction axis or steps. Here, we demonstrate that the energy band at the tip of an individual single-walled carbon nanotube (SWCNT) can be spontaneously shifted in a high-permittivity growth environment, with its other end in contact with a low-work function electrode (e.g., hafnium carbide or titanium carbide). By adjusting the Fermi level at a point where there is a substantial disparity in the density of states (DOS) between semiconducting (s-) and metallic (m-) SWCNTs, we achieve effective electrostatic catalysis for s-SWCNT growth assisted by a weak EEF perturbation (200V/cm). This approach enables the production of high-purity (99.92%) s-SWCNT horizontal arrays with narrow diameter distribution (0.95+-0.04 nm), targeting the requirement of advanced SWCNT-based electronics for future computing. These findings highlight the potential of electrostatic catalysis in precise materials growth, especially for s-SWCNTs, and pave the way for the development of advanced SWCNT-based electronics. △ Less

Submitted 3 April, 2024; originally announced April 2024.

Comments: 4 figures, 23 pages

Sustainability-Driven Exploration of Topological Material

Authors: Artittaya Boonkird, Nathan Drucker, Manasi Mandal, Thanh Nguyen, Jingjie Yeo, Vsevolod Belosevich, Ellan Spero, Christine Ortiz, Qiong Ma, Liang Fu, Tomas Palacios, Mingda Li

Abstract: Topological materials are at the forefront of quantum materials research, offering tremendous potential for next-generation energy and information devices. However, current investigation of these materials remains largely focused on performance and often neglects the crucial aspect of sustainability. Recognizing the pivotal role of sustainability in addressing global pollution, carbon emissions, r… ▽ More Topological materials are at the forefront of quantum materials research, offering tremendous potential for next-generation energy and information devices. However, current investigation of these materials remains largely focused on performance and often neglects the crucial aspect of sustainability. Recognizing the pivotal role of sustainability in addressing global pollution, carbon emissions, resource conservation, and ethical labor practices, we present a comprehensive evaluation of topological materials based on their sustainability and environmental impact. Our approach involves a hierarchical analysis encompassing cost, toxicity, energy demands, environmental impact, social implications, and resilience to imports. By applying this framework to over 16,000 topological materials, we establish a sustainable topological materials database. Our endeavor unveils environmental-friendly topological materials candidates which have been previously overlooked, providing insights into their environmental ramifications and feasibility for industrial scalability. The work represents a critical step toward industrial adoption of topological materials, offering the potential for significant technological advancements and broader societal benefits. △ Less

Submitted 18 August, 2023; originally announced August 2023.

Waveguide-Integrated Mid-Infrared Photodetection using Graphene on a Scalable Chalcogenide Glass Platform

Authors: Jordan Goldstein, Hongtao Lin, Skylar Deckoff-Jones, Marek Hempel, Ang-Yu Lu, Kathleen A. Richardson, Tomas Palacios, Jing Kong, Juejun Hu, Dirk Englund

Abstract: The development of compact and fieldable mid-infrared (mid-IR) spectroscopy devices represents a critical challenge for distributed sensing with applications from gas leak detection to environmental monitoring. Recent work has focused on mid-IR photonic integrated circuit (PIC) sensing platforms and waveguide-integrated mid-IR light sources and detectors based on semiconductors such as PbTe, black… ▽ More The development of compact and fieldable mid-infrared (mid-IR) spectroscopy devices represents a critical challenge for distributed sensing with applications from gas leak detection to environmental monitoring. Recent work has focused on mid-IR photonic integrated circuit (PIC) sensing platforms and waveguide-integrated mid-IR light sources and detectors based on semiconductors such as PbTe, black phosphorus and tellurene. However, material bandgaps and reliance on SiO$_2$ substrates limit operation to wavelengths $λらむだ\lesssim4\,μみゅー\textrm{m}$. Here we overcome these challenges with a chalcogenide glass-on-CaF$_2$ PIC architecture incorporating split-gate photothermoelectric graphene photodetectors. Our design extends operation to $λらむだ=5.2\,μみゅー\textrm{m}$ with a Johnson noise-limited noise-equivalent power of $1.1\,\mathrm{nW}/\mathrm{Hz}^{1/2}$, no fall-off in photoresponse up to $f = 1\,\mathrm{MHz}$, and a predicted 3-dB bandwidth of $f_{3\textrm{dB}}>1\,\mathrm{GHz}$. This mid-IR PIC platform readily extends to longer wavelengths and opens the door to applications from distributed gas sensing and portable dual comb spectroscopy to weather-resilient free space optical communications. △ Less

Submitted 29 December, 2021; originally announced December 2021.

Comments: 15 pages, 11 figures

Designing Artificial Two-Dimensional Landscapes via Room-Temperature Atomic-Layer Substitution

Authors: Yunfan Guo, Yuxuan Lin, Kaichen Xie, Biao Yuan, Jiadi Zhu, Pin-Chun Shen, Ang-Yu Lu, Cong Su, Enzheng Shi, Kunyan Zhang, Zhengyang Cai, Jihoon Park, Qingqing Ji, Jiangtao Wang, Xiaochuan Dai, Xuezeng Tian, Shengxi Huang, Letian Dou, Ju Li, Yi Yu, Juan-Carlos Idrobo, Ting Cao, Tomás Palacios, Jing Kong

Abstract: Manipulating materials with atomic-scale precision is essential for the development of next-generation material design toolbox. Tremendous efforts have been made to advance the compositional, structural, and spatial accuracy of material deposition and patterning. The family of 2D materials provides an ideal platform to realize atomic-level material architectures. The wide and rich physics of these… ▽ More Manipulating materials with atomic-scale precision is essential for the development of next-generation material design toolbox. Tremendous efforts have been made to advance the compositional, structural, and spatial accuracy of material deposition and patterning. The family of 2D materials provides an ideal platform to realize atomic-level material architectures. The wide and rich physics of these materials have led to fabrication of heterostructures, superlattices, and twisted structures with breakthrough discoveries and applications. Here, we report a novel atomic-scale material design tool that selectively breaks and forms chemical bonds of 2D materials at room temperature, called atomic-layer substitution (ALS), through which we can substitute the top layer chalcogen atoms within the 3-atom-thick transition-metal dichalcogenides using arbitrary patterns. Flipping the layer via transfer allows us to perform the same procedure on the other side, yielding programmable in-plane multi-heterostructures with different out-of-plane crystal symmetry and electric polarization. First-principle calculations elucidate how the ALS process is overall exothermic in energy and only has a small reaction barrier, facilitating the reaction to occur at room temperature. Optical characterizations confirm the fidelity of this design approach, while TEM shows the direct evidence of Janus structure and suggests the atomic transition at the interface of designed heterostructure. Finally, transport and Kelvin probe measurements on MoXY (X,Y=S,Se; X and Y corresponding to the bottom and top layers) lateral multi-heterostructures reveal the surface potential and dipole orientation of each region, and the barrier height between them. Our approach for designing artificial 2D landscape down to a single layer of atoms can lead to unique electronic, photonic and mechanical properties previously not found in nature. △ Less

Submitted 15 November, 2020; originally announced November 2020.

On the Use of Graphene to Improve the Performance of Concentrator III-V Multijunction Solar Cells

Authors: Laura Barrutia, IvÁn Lombardero1, Mario Ochoa, Mercedes GabÁs, IvÁn GarcÍa, TomÁs Palacios, Andrew Johnson, Ignacio Rey-Stolle, Carlos Algora

Abstract: Graphene has been intensively studied in photovoltaics focusing on emerging solar cells based on thin films, dye-sensitized, quantum dots, nanowires, etc. However, the typical efficiency of these solar cells incorporating graphene are below 16%. Therefore, the photovoltaic potential of graphene has not been already shown. In this work the use of graphene for concentration applications on III-V mul… ▽ More Graphene has been intensively studied in photovoltaics focusing on emerging solar cells based on thin films, dye-sensitized, quantum dots, nanowires, etc. However, the typical efficiency of these solar cells incorporating graphene are below 16%. Therefore, the photovoltaic potential of graphene has not been already shown. In this work the use of graphene for concentration applications on III-V multijunction solar cells, which indeed are the solar cells with the highest efficiency, is demonstrated. Firstly, a wide optoelectronic characterization of graphene layers is carried out. Then, the graphene layer is incorporated onto triple-junction solar cells, which decreases their series resistance by 35% (relative), leading to an increase in Fill Factor of 4% (absolute) at concentrations of 1,000 suns. Simultaneously, the optical absorption of graphene produces a relative short circuit current density decrease in the range of 0-1.8%. As a result, an absolute efficiency improvement close to 1% at concentrations of 1,000 suns was achieved with respect to triple junction solar cells without graphene. The impact of incorporating one and two graphene monolayers is also evaluated. △ Less

Submitted 13 July, 2020; originally announced July 2020.

Comments: 29 pages, 6 figures

Journal ref: Progress in Photovoltaics 2019

Impact of $Al_2O_3$ Passivation on the Photovoltaic Performance of Vertical $WSe_2$ Schottky Junction Solar Cells

Authors: Elaine McVay, Ahmad Zubair, Yuxuan Lin, Amirhasan Nourbakhsh, Tomás Palacios

Abstract: Transition metal dichalcogenide (TMD) materials have emerged as promising candidates for thin film solar cells due to their wide bandgap range across the visible wavelengths, high absorption coefficient and ease of integration with both arbitrary substrates as well as conventional semiconductor technologies. However, reported TMD-based solar cells suffer from relatively low external quantum effici… ▽ More Transition metal dichalcogenide (TMD) materials have emerged as promising candidates for thin film solar cells due to their wide bandgap range across the visible wavelengths, high absorption coefficient and ease of integration with both arbitrary substrates as well as conventional semiconductor technologies. However, reported TMD-based solar cells suffer from relatively low external quantum efficiencies (EQE) and low open circuit voltage due to unoptimized design and device fabrication. This paper studies $Pt/WSe_2$ vertical Schottky junction solar cells with various $WSe_2$ thicknesses in order to find the optimum absorber thickness.Also, we show that the photovoltaic performance can be improved via $Al_2O_3$ passivation which increases the EQE by up to 29.5% at 410 nm wavelength incident light. The overall resulting short circuit current improves through antireflection coating, surface doping, and surface trap passivation effects. Thanks to the ${Al_2O_3}$ coating, this work demonstrates a device with open circuit voltage ($V_{OC}$) of 380 mV and short circuit current density ($J_{SC}$) of 10.7 $mA/cm^2$. Finally, the impact of Schottky barrier height inhomogeneity at the $Pt/WSe_2$ contact is investigated as a source of open circuit voltage lowering in these devices △ Less

Submitted 30 June, 2020; originally announced June 2020.

Realization of 2D Crystalline Metal Nitrides via Selective Atomic Substitution

Authors: Jun Cao, Tianshu Li, Hongze Gao, Yuxuan Lin, Xingzhi Wang, Haozhe Wang, Tomás Palacios, Xi Ling

Abstract: Two-dimensional (2D) transition metal nitrides (TMNs) are new members in the 2D materials family with a wide range of applications. Particularly, highly crystalline and large area thin films of TMNs are potentially promising for applications in electronic and optoelectronic devices; however, the synthesis of such TMNs has not yet been achieved. Here, we report the synthesis of few-nanometer thin M… ▽ More Two-dimensional (2D) transition metal nitrides (TMNs) are new members in the 2D materials family with a wide range of applications. Particularly, highly crystalline and large area thin films of TMNs are potentially promising for applications in electronic and optoelectronic devices; however, the synthesis of such TMNs has not yet been achieved. Here, we report the synthesis of few-nanometer thin Mo5N6 crystals with large area and high quality via in situ chemical conversion of layered MoS2 crystals. The structure and quality of the ultrathin Mo5N6 crystal are confirmed using transmission electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. The large lateral dimensions of Mo5N6 crystals are inherited from the MoS2 crystals that are used for the conversion. Atomic force microscopy characterization reveals the thickness of Mo5N6 crystals is reduced to about 1/3 of the MoS2 crystal. Electrical measurements show the obtained Mo5N6 samples are metallic with high electrical conductivity (~ 100 Ωおーむ sq-1), which is comparable to graphene. The versatility of this general approach is demonstrated by expanding the method to synthesize W5N6 and TiN. Our strategy offers a new direction for preparing 2D TMNs with desirable characteristics, opening a door for studying fundamental physics and facilitating the development of next generation electronics. △ Less

Submitted 3 October, 2019; originally announced October 2019.

Comments: 41 pages, 6 Figures, Accepted by Science Advances

Evidence for a pressure-induced phase transition of few-layer graphene to 2D diamond

Authors: Luiz G. Pimenta Martins, Diego L. Silva, Jesse S. Smith, Ang-Yu Lu, Cong Su, Marek Hempel, Connor Occhialini, Xiang Ji, Ricardo Pablo, Rafael S. Alencar, Alan C. R. Souza, Alan B. de Oliveira, Ronaldo J. C. Batista, Tomás Palacios, Matheus J. S. Matos, Mário S. C. Mazzoni, Riccardo Comin, Jing Kong, Luiz G. Cançado

Abstract: We unveil the diamondization mechanism of few-layer graphene compressed in the presence of water, providing robust evidence for the pressure-induced formation of 2D diamond. High-pressure Raman spectroscopy provides evidence of a phase transition occurring in the range of 4-7 GPa for 5-layer graphene and graphite. The pressure-induced phase is partially transparent and indents the silicon substrat… ▽ More We unveil the diamondization mechanism of few-layer graphene compressed in the presence of water, providing robust evidence for the pressure-induced formation of 2D diamond. High-pressure Raman spectroscopy provides evidence of a phase transition occurring in the range of 4-7 GPa for 5-layer graphene and graphite. The pressure-induced phase is partially transparent and indents the silicon substrate. Our combined theoretical and experimental results indicate a gradual top-bottom diamondization mechanism, consistent with the formation of diamondene, a 2D ferromagnetic semiconductor. High-pressure x-ray diffraction on graphene indicates the formation of hexagonal diamond, consistent with the bulk limit of eclipsed-conformed diamondene. △ Less

Submitted 16 October, 2019; v1 submitted 3 October, 2019; originally announced October 2019.

Comments: 30 pages, 17 figures

Deep-Learning-Enabled Fast Optical Identification and Characterization of Two-Dimensional Materials

Authors: Bingnan Han, Yuxuan Lin, Yafang Yang, Nannan Mao, Wenyue Li, Haozhe Wang, Kenji Yasuda, Xirui Wang, Valla Fatemi, Lin Zhou, Joel I-Jan Wang, Qiong Ma, Yuan Cao, Daniel Rodan-Legrain, Ya-Qing Bie, Efrén Navarro-Moratalla, Dahlia Klein, David MacNeill, Sanfeng Wu, Hikari Kitadai, Xi Ling, Pablo Jarillo-Herrero, Jing Kong, Jihao Yin, Tomás Palacios

Abstract: Advanced microscopy and/or spectroscopy tools play indispensable role in nanoscience and nanotechnology research, as it provides rich information about the growth mechanism, chemical compositions, crystallography, and other important physical and chemical properties. However, the interpretation of imaging data heavily relies on the "intuition" of experienced researchers. As a result, many of the d… ▽ More Advanced microscopy and/or spectroscopy tools play indispensable role in nanoscience and nanotechnology research, as it provides rich information about the growth mechanism, chemical compositions, crystallography, and other important physical and chemical properties. However, the interpretation of imaging data heavily relies on the "intuition" of experienced researchers. As a result, many of the deep graphical features obtained through these tools are often unused because of difficulties in processing the data and finding the correlations. Such challenges can be well addressed by deep learning. In this work, we use the optical characterization of two-dimensional (2D) materials as a case study, and demonstrate a neural-network-based algorithm for the material and thickness identification of exfoliated 2D materials with high prediction accuracy and real-time processing capability. Further analysis shows that the trained network can extract deep graphical features such as contrast, color, edges, shapes, segment sizes and their distributions, based on which we develop an ensemble approach topredict the most relevant physical properties of 2D materials. Finally, a transfer learning technique is applied to adapt the pretrained network to other applications such as identifying layer numbers of a new 2D material, or materials produced by a different synthetic approach. Our artificial-intelligence-based material characterization approach is a powerful tool that would speed up the preparation, initial characterization of 2D materials and other nanomaterials and potentially accelerate new material discoveries. △ Less

Submitted 27 January, 2020; v1 submitted 26 June, 2019; originally announced June 2019.

Giant intrinsic photoresponse in pristine graphene

Authors: Qiong Ma, Chun Hung Lui, Justin C. W. Song, Yuxuan Lin, Jian Feng Kong, Yuan Cao, Thao H. Dinh, Nityan L. Nair, Wenjing Fang, Kenji Watanabe, Takashi Taniguchi, Su-Yang Xu, Jing Kong, Tomás Palacios, Nuh Gedik, Nathaniel M. Gabor, Pablo Jarillo-Herrero

Abstract: When the Fermi level matches the Dirac point in graphene, the reduced charge screening can dramatically enhance electron-electron (e-e) scattering to produce a strongly interacting Dirac liquid. While the dominance of e-e scattering already leads to novel behaviors, such as electron hydrodynamic flow, further exotic phenomena have been predicted to arise specifically from the unique kinematics of… ▽ More When the Fermi level matches the Dirac point in graphene, the reduced charge screening can dramatically enhance electron-electron (e-e) scattering to produce a strongly interacting Dirac liquid. While the dominance of e-e scattering already leads to novel behaviors, such as electron hydrodynamic flow, further exotic phenomena have been predicted to arise specifically from the unique kinematics of e-e scattering in massless Dirac systems. Here, we use optoelectronic probes, which are highly sensitive to the kinematics of electron scattering, to uncover a giant intrinsic photocurrent response in pristine graphene. This photocurrent emerges exclusively at the charge neutrality point and vanishes abruptly at non-zero charge densities. Moreover, it is observed at places with broken reflection symmetry, and it is selectively enhanced at free graphene edges with sharp bends. Our findings reveal that the photocurrent relaxation is strongly suppressed by a drastic change of fast photocarrier kinematics in graphene when its Fermi level matches the Dirac point. The emergence of robust photocurrents in neutral Dirac materials promises new energy-harvesting functionalities and highlights intriguing electron dynamics in the optoelectronic response of Dirac fluids. △ Less

Submitted 17 December, 2018; originally announced December 2018.

Comments: Originally submitted version

Journal ref: Nature Nanotechnology (2018)

N-polar AlN buffer growth by MOVPE for transistor applications

Authors: J. Lemettinen, H. Okumura, T. Palacios, S. Suihkonen

Abstract: We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing high buffer leak current. The silicon concentration reduces from 2x1… ▽ More We present the electrical characterization of N-polar AlN layers grown by metal-organic vapor phase epitaxy and the demonstration of N-polar AlN-channel metal-semiconductor field-effect transistors (MESFETs). A high concentration of silicon is unintentionally incorporated during the high-temperature growth of N-polar AlN, causing high buffer leak current. The silicon concentration reduces from 2x10^18 /cm^3 to 9x10^15 /cm^3 with decreasing growth temperature, reducing the buffer leak current to 5.6 nA/mm at a 100 V bias. The N-polar AlN MESFET exhibits an off-state drain current of 0.27 nA/mm and a transistor on/off ratio of 4.6x10^4 due to the high-resistivity AlN buffer layers. △ Less

Submitted 9 November, 2018; originally announced November 2018.

Comments: This is the version of the article before peer review or editing, as submitted by an author to Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.7567/APEX.11.101002

Journal ref: 2018 Appl. Phys. Express 11 101002

MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

Authors: J. Lemettinen, H. Okumura, I. Kim, M. Rudzinski, J. Grzonka, T. Palacios, S. Suihkonen

Abstract: We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al-polar AlN on 4H-SiC with 4 deg miscut using constant growth parameters. At a high temperature of 1165 degC, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/… ▽ More We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al-polar AlN on 4H-SiC with 4 deg miscut using constant growth parameters. At a high temperature of 1165 degC, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-um-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (002), (102) and (201) reflections, respectively. △ Less

Submitted 8 November, 2018; originally announced November 2018.

Journal ref: Journal of Crystal Growth 487 (2018) 50-56

MOVPE growth of N-polar AlN on 4H-SiC: effect of substrate miscut on layer quality

Authors: J. Lemettinen, H. Okumura, I. Kim, C. Kauppinen, T. Palacios, S. Suihkonen

Abstract: We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards <-1100> by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1 deg and 4 deg miscut substrates were found to be 20000 and 1000, respectively. MOVPE grown N-polar AlN layer without hexagona… ▽ More We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards <-1100> by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1 deg and 4 deg miscut substrates were found to be 20000 and 1000, respectively. MOVPE grown N-polar AlN layer without hexagonal hillocks or step bunching was achieved using a 4H-SiC substrate with an intentional miscut of 1 deg towards <-1100>. The 200-nm-thick AlN layer exhibited X-ray rocking curve full width half maximums of 203 arcsec and 389 arcsec for (002) and (102) reflections, respectively. The root mean square roughness was 0.43 nm for a 2 um x 2 um atomic force microscope scan. △ Less

Submitted 8 November, 2018; originally announced November 2018.

Journal ref: Journal of Crystal Growth 487 (2018) 12-16

Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs under Mist Exposure

Authors: M. Fátima Romero, Alberto Boscá, Jorge Pedrós, Javier Martínez, Rajveer Fandan, Tomás Palacios, Fernando Calle

Abstract: The effect of a two dimensional (2D) graphene layer (GL) on top of the silicon nitride (SiN) passivation layer of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) has been systematically analyzed. Results showed that in the devices without the GL, the maximum drain current density (I_D,max) and the maximum transconductance (g_m,max) decreased gradually as the… ▽ More The effect of a two dimensional (2D) graphene layer (GL) on top of the silicon nitride (SiN) passivation layer of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) has been systematically analyzed. Results showed that in the devices without the GL, the maximum drain current density (I_D,max) and the maximum transconductance (g_m,max) decreased gradually as the mist exposure time increased, up to 23% and 10%, respectively. Moreover, the gate lag ratio (GLR) increased around 10% during mist exposure. In contrast, devices with a GL showed a robust behavior and not significant changes in the electrical characteristics in both DC and pulsed conditions. The origin of these behaviors has been discussed and the results pointed to the GL as the key factor for improving the moisture resistance of the SiN passivation layer. △ Less

Submitted 31 May, 2018; originally announced May 2018.

Comments: Accepted manuscript; 4 pages, 5 figures

Journal ref: IEEE Electron Device Lett. 38 (2017) 1441-1444

Direct optical detection of Weyl fermion chirality in a topological semimetal

Authors: Qiong Ma, Su-Yang Xu, Ching-Kit Chan, Cheng-Long Zhang, Guoqing Chang, Yuxuan Lin, Weiwei Xie, Tomás Palacios, Hsin Lin, Shuang Jia, Patrick A. Lee, Pablo Jarillo-Herrero, Nuh Gedik

Abstract: A Weyl semimetal (WSM) is a novel topological phase of matter, in which Weyl fermions (WFs) arise as pseudo-magnetic monopoles in its momentum space. The chirality of the WFs, given by the sign of the monopole charge, is central to the Weyl physics, since it directly serves as the sign of the topological number and gives rise to exotic properties such as Fermi arcs and the chiral anomaly. Despite… ▽ More A Weyl semimetal (WSM) is a novel topological phase of matter, in which Weyl fermions (WFs) arise as pseudo-magnetic monopoles in its momentum space. The chirality of the WFs, given by the sign of the monopole charge, is central to the Weyl physics, since it directly serves as the sign of the topological number and gives rise to exotic properties such as Fermi arcs and the chiral anomaly. Despite being the defining property of a WSM, the chirality of the WFs has never been experimentally measured. Here, we directly detect the chirality of the WFs by measuring the photocurrent in response to circularly polarized mid-infrared light. The resulting photocurrent is determined by both the chirality of WFs and that of the photons. Our results pave the way for realizing a wide range of theoretical proposals for studying and controlling the WFs and their associated quantum anomalies by optical and electrical means. More broadly, the two chiralities, analogous to the two valleys in 2D materials, lead to a new degree of freedom in a 3D crystal with potential novel pathways to store and carry information. △ Less

Submitted 1 May, 2017; originally announced May 2017.

Comments: Accepted to Nature Physics. Version of original submission

Bright Room-Temperature Single Photon Emission from Defects in Gallium Nitride

Authors: Amanuel M. Berhane, Kwang-Yong Jeong, Zoltán Bodrog, Saskia Fiedler, Tim Schröder, Noelia Vico Triviño, Tomás Palacios, Adam Gali, Milos Toth, Dirk Englund, Igor Aharonovich

Abstract: Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron nitride. However, it is currently not possible to grow these materials as sub-micron thick films on low-refractive index substrates, which is necessary for mature… ▽ More Single photon emitters play a central role in many photonic quantum technologies. A promising class of single photon emitters consists of atomic color centers in wide-bandgap crystals, such as diamond silicon carbide and hexagonal boron nitride. However, it is currently not possible to grow these materials as sub-micron thick films on low-refractive index substrates, which is necessary for mature photonic integrated circuit technologies. Hence, there is great interest in identifying quantum emitters in technologically mature semiconductors that are compatible with suitable heteroepitaxies. Here, we demonstrate robust single photon emitters based on defects in gallium nitride (GaN), the most established and well understood semiconductor that can emit light over the entire visible spectrum. We show that the emitters have excellent photophysical properties including a brightness in excess of 500x10^3 counts/s. We further show that the emitters can be found in a variety of GaN wafers, thus offering reliable and scalable platform for further technological development. We propose a theoretical model to explain the origin of these emitters based on cubic inclusions in hexagonal gallium nitride. Our results constitute a feasible path to scalable, integrated on-chip quantum technologies based on GaN. △ Less

Submitted 15 October, 2016; originally announced October 2016.

Parallel Stitching of Two-Dimensional Materials

Authors: Xi Ling, Yuxuan Lin, Qiong Ma, Ziqiang Wang, Yi Song, Lili Yu, Shengxi Huang, Wenjing Fang, Xu Zhang, Allen L. Hsu, Yaqing Bie, Yi-Hsien Lee, Yimei Zhu, Lijun Wu, Ju Li, Pablo Jarillo-Herrero, Mildred S. Dresselhaus, Tomás Palacios, Jing Kong

Abstract: Diverse parallel stitched two-dimensional heterostructures are synthesized, including metal-semiconductor (graphene-MoS2), semiconductor-semiconductor (WS2-MoS2), and insulator-semiconductor (hBN-MoS2), directly through selective sowing of aromatic molecules as the seeds in chemical vapor deposition (CVD) method. Our methodology enables the large-scale fabrication of lateral heterostructures with… ▽ More Diverse parallel stitched two-dimensional heterostructures are synthesized, including metal-semiconductor (graphene-MoS2), semiconductor-semiconductor (WS2-MoS2), and insulator-semiconductor (hBN-MoS2), directly through selective sowing of aromatic molecules as the seeds in chemical vapor deposition (CVD) method. Our methodology enables the large-scale fabrication of lateral heterostructures with arbitrary patterns, and clean and precisely aligned interfaces, which offers tremendous potential for its application in integrated circuits. △ Less

Submitted 14 December, 2015; originally announced December 2015.

Comments: 30 pages, 4 figures, Accepted by Advanced Materials

Use of THz Photoconductive Sources to Characterize Tunable Graphene RF Plasmonic Antennas

Authors: Albert Cabellos, Ignacio Llátser, Eduard Alarcón, Allen Hsu, Tomas Palacios

Abstract: Graphene, owing to its ability to support plasmon polariton waves in the terahertz frequency range, enables the miniaturization of antennas to allow wireless communications among nanosystems. One of the main challenges in the demonstration of graphene antennas is finding suitable terahertz sources to feed the antenna. This paper estimates the performance of a graphene RF plasmonic micro-antenna fe… ▽ More Graphene, owing to its ability to support plasmon polariton waves in the terahertz frequency range, enables the miniaturization of antennas to allow wireless communications among nanosystems. One of the main challenges in the demonstration of graphene antennas is finding suitable terahertz sources to feed the antenna. This paper estimates the performance of a graphene RF plasmonic micro-antenna fed with a photoconductive source. The terahertz source is modeled and, by means of a full-wave EM solver, the radiated power of the device is estimated with respect to material, laser illumination and antenna geometry parameters. The results show that the proposed device radiates terahertz pulses with an average power up to 1$μみゅー$W, proving the feasibility of feeding miniaturized graphene antennas with photoconductive materials. △ Less

Submitted 17 February, 2014; v1 submitted 27 January, 2014; originally announced January 2014.

Integrated GaN photonic circuits on silicon (100) for second harmonic generation

Authors: Chi Xiong, Wolfram Pernice, Kevin K. Ryu, Carsten Schuck, King Y. Fong, Tomas Palacios, Hong X. Tang

Abstract: We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \{chi}(2) nonlinear susceptibility is measured to be as high as 16 plu… ▽ More We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The \{chi}(2) nonlinear susceptibility is measured to be as high as 16 plus minus 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and infrared wavelengths, our platform provides a viable route for the on-chip generation of optical wavelengths in both the far infrared and near-UV through a combination of \{chi}(2) enabled sum-/difference-frequency processes. △ Less

Submitted 20 January, 2014; originally announced January 2014.

Journal ref: Optics Express, Vol. 19, Issue 11, pp. 10462-10470 (2011)

Large-scale 2D Electronics based on Single-layer MoS2 Grown by Chemical Vapor Deposition

Authors: Han Wang, Lili Yu, Yi-Hsien Lee, Wenjing Fang, Allen Hsu, Patrick Herring, Matthew Chin, Madan Dubey, Lain-Jong Li, Jing Kong, Tomas Palacios

Abstract: 2D nanoelectronics based on single-layer MoS2 offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS2 and fabrication of devices and circuits for the first time. Both digital and analog circuits are fabricated to demonstrate its capability for mixed-signal applications. 2D nanoelectronics based on single-layer MoS2 offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS2 and fabrication of devices and circuits for the first time. Both digital and analog circuits are fabricated to demonstrate its capability for mixed-signal applications. △ Less

Submitted 16 February, 2013; originally announced February 2013.

Comments: 4 pages, 11 figures, IEEE IEDM 2012

Journal ref: IEEE International Electron Device Meeting (IEDM) 2012 Tech. Digest , pp. 4.6.1 - 4.6.4

Integrated Circuits Based on Bilayer MoS2 Transistors

Authors: Han Wang, Lili Yu, Yi-Hsien Lee, Yumeng Shi, Allen Hsu, Matthew Chin, Lain-Jong Li, Madan Dubey, Jing Kong, Tomas Palacios

Abstract: Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene's advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as fie… ▽ More Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene's advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors and photodetectors made from few-layer MoS2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multi-stage circuits and logic building blocks on MoS2 to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between two to twelve transistors seamlessly integrated side-by-side on a single sheet of bilayer MoS2. Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions. △ Less

Submitted 5 August, 2012; originally announced August 2012.

Comments: 23 pages, 5 figures, Supplementary Information, Accepted for publication in Nano Letters

Journal ref: Nano Lett., 2012, 12 (9), pp 4674-4680

Delay Analysis of Graphene Field-Effect Transistors

Authors: Han Wang, Allen Hsu, Dong Seup Lee, Ki Kang Kim, Jing Kong, Tomas Palacios

Abstract: In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs). GFETs are fabricated at the wafer-scale on sapphire substrate. For a device with a gate length of 210 nm, a current gain cut-off frequency fT of 18 GHz and 22 GHz is obtained before and after de-embedding. The extraction of the internal (Cgs,i, Cgd,i) and external capacitances (Cgs,ex and Cgd,ex) fro… ▽ More In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs). GFETs are fabricated at the wafer-scale on sapphire substrate. For a device with a gate length of 210 nm, a current gain cut-off frequency fT of 18 GHz and 22 GHz is obtained before and after de-embedding. The extraction of the internal (Cgs,i, Cgd,i) and external capacitances (Cgs,ex and Cgd,ex) from the scaling behavior of the gate capacitances Cgs and Cgd allows the intrinsic (τたう_int), extrinsic (τたう_ext) and parasitic delays (τたう_par) to be obtained. In addition, the extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data while the breakdown of the total delay into intrinsic, extrinsic, and parasitic components can offer valuable information for optimizing RF GFETs structures. △ Less

Submitted 20 December, 2011; originally announced December 2011.

Comments: 3 pages, 3 figures, accepted for publication in IEEE Electron Device Letters

Journal ref: IEEE Electron Device Letters, vol. 33, no. 3, pp. 324-326, 2012

BN/Graphene/BN Transistors for RF Applications

Authors: Han Wang, Thiti Taychatanapat, Allen Hsu, Kenji Watanabe, Takashi Taniguchi, Pablo Jarillo-Herrero, Tomas Palacios

Abstract: In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even when it is sandwiched between a substrate and a gate dielectric. Field effect transistors (FETs) using a bilayer graphene channel have been fabricated with a gate length LG=450 nm. A current density in excess of 1 A/mm an… ▽ More In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even when it is sandwiched between a substrate and a gate dielectric. Field effect transistors (FETs) using a bilayer graphene channel have been fabricated with a gate length LG=450 nm. A current density in excess of 1 A/mm and DC transconductance close to 250 mS/mm are achieved for both electron and hole conductions. RF characterization is performed for the first time on this device structure, giving a current-gain cut-off frequency fT=33 GHz and an fT.LG product of 15 GHz.um. The improved performance obtained by the BN/Graphene/BN structure is very promising to enable the next generation of high frequency graphene RF electronics. △ Less

Submitted 9 August, 2011; originally announced August 2011.

Comments: 3 pages, 5 figures, accepted for publication in IEEE Electron Device Letters

Journal ref: IEEE Electron Device Letters, vol. 32, no. 9, pp. 1209-1211, Sept. 2011