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Ultra-smooth single crystal diamond surfaces resulting from implantation and lift-off processes
Authors:
T. N. Tran Thi,
B. Fernandez,
D. Eon,
E. Gheeraert,
J. Hartwig,
T. A. Lafford,
A. Perrat-Mabilon,
C. Peaucelle,
P. Olivero,
E. Bustarret
Abstract:
A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation and graphitized by annealing before being selectively etched. We have used O+ at 240 keV, the main process variables being the ion fluence (ranging from 3x10^15 cm^-2 to 3x10^17 cm^-2) and the final etching process (wet etch, H2 plasma and annealing in air)…
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A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation and graphitized by annealing before being selectively etched. We have used O+ at 240 keV, the main process variables being the ion fluence (ranging from 3x10^15 cm^-2 to 3x10^17 cm^-2) and the final etching process (wet etch, H2 plasma and annealing in air). The substrates were characterized by atomic force microscopy, optical profilometry and white beam X-ray topography. The influence of the various process parameters on the resulting lift-off efficiency and final surface roughness is discussed. An O+ fluence of 2x10^17 cm^-2 was found to result in sub-nanometre roughness over tens of um^2.
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Submitted 25 August, 2016;
originally announced August 2016.
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Effects of high-power laser irradiation on sub-superficial graphitic layers in single crystal diamond
Authors:
F. Picollo,
S. Rubanov,
C. Tomba,
A. Battiato,
E. Enrico,
A. Perrat-Mabilon,
C. Peaucelle,
T. N. Tran Thi,
L. Boarino,
E. Gheeraert,
P. Olivero
Abstract:
We report on the structural modifications induced by a lambda = 532 nm ns-pulsed high-power laser on sub-superficial graphitic layers in single-crystal diamond realized by means of MeV ion implantation. A systematic characterization of the structures obtained under different laser irradiation conditions (power density, number of pulses) and subsequent thermal annealing was performed by different e…
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We report on the structural modifications induced by a lambda = 532 nm ns-pulsed high-power laser on sub-superficial graphitic layers in single-crystal diamond realized by means of MeV ion implantation. A systematic characterization of the structures obtained under different laser irradiation conditions (power density, number of pulses) and subsequent thermal annealing was performed by different electron microscopy techniques. The main feature observed after laser irradiation is the thickening of the pre-existing graphitic layer. Cross sectional SEM imaging was performed to directly measure the thickness of the modified layers, and subsequent selective etching of the buried layers was employed to both assess their graphitic nature and enhance the SEM imaging contrast. In particular, it was found that for optimal irradiation parameters the laser processing induces a six-fold increase the thickness of sub superficial graphitic layers without inducing mechanical failures in the surrounding crystal. TEM microscopy and EELS spectroscopy allowed a detailed analysis of the internal structure of the laser irradiated layers, highlighting the presence of different nano graphitic and amorphous layers. The obtained results demonstrate the effectiveness and versatility of high-power laser irradiation for an accurate tuning of the geometrical and structural features of graphitic structures embedded in single crystal diamond, and open new opportunities in diamond fabrication.
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Submitted 25 August, 2016;
originally announced August 2016.
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Magnetic dephasing in mesoscopic spin glasses
Authors:
Thibaut Capron,
Guillaume Forestier,
Angela Perrat-Mabilon,
Christophe Peaucelle,
Tristan Meunier,
Christopher Bäuerle,
Laurent P. Lévy,
David Carpentier,
Laurent Saminadayar
Abstract:
We have measured Universal Conductance Fluctuations in the metallic spin glass Ag:Mn as a function of temperature and magnetic field. From this measurement, we can access the phase coherence time of the electrons in the spin glass. We show that this phase coherence time increases with both the inverse of the temperature and the magnetic field. From this we deduce that decoherence mechanisms are st…
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We have measured Universal Conductance Fluctuations in the metallic spin glass Ag:Mn as a function of temperature and magnetic field. From this measurement, we can access the phase coherence time of the electrons in the spin glass. We show that this phase coherence time increases with both the inverse of the temperature and the magnetic field. From this we deduce that decoherence mechanisms are still active even deep in the spin glass phase.
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Submitted 31 March, 2013;
originally announced April 2013.
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Remanence effects in the electrical resistivity of spin glasses
Authors:
Thibaut Capron,
A. Perrat-Mabilon,
Christophe Peaucelle,
Tristan Meunier,
David Carpentier,
Laurent P. Lévy,
Christopher Bäuerle,
Laurent Saminadayar
Abstract:
We have measured the low temperature electrical resistivity of Ag : Mn mesoscopic spin glasses prepared by ion implantation with a concentration of 700 ppm. As expected, we observe a clear maximum in the resistivity (T ) at a temperature in good agreement with theoretical predictions. Moreover, we observe remanence effects at very weak magnetic fields for the resistivity below the freezing tempera…
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We have measured the low temperature electrical resistivity of Ag : Mn mesoscopic spin glasses prepared by ion implantation with a concentration of 700 ppm. As expected, we observe a clear maximum in the resistivity (T ) at a temperature in good agreement with theoretical predictions. Moreover, we observe remanence effects at very weak magnetic fields for the resistivity below the freezing temperature Tsg: upon Field Cooling (fc), we observe clear deviations of (T ) as compared with the Zero Field Cooling (zfc); such deviations appear even for very small magnetic fields, typically in the Gauss range. This onset of remanence for very weak magnetic fields is reminiscent of the typical signature on magnetic susceptibility measurements of the spin glass transition for this generic glassy system.
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Submitted 19 November, 2010;
originally announced November 2010.