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One-dimensional topological channels in heterostrained bilayer graphene
Authors:
Nina C. Georgoulea,
Nuala M. Caffrey,
Stephen R. Power
Abstract:
The domain walls between AB- and BA-stacked gapped bilayer graphene have garnered intense interest as they host topologically-protected, valley-polarised transport channels. The introduction of a twist angle between the bilayers and the associated formation of a Moire pattern has been the dominant method used to study these topological channels, but heterostrain can also give rise to similar stack…
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The domain walls between AB- and BA-stacked gapped bilayer graphene have garnered intense interest as they host topologically-protected, valley-polarised transport channels. The introduction of a twist angle between the bilayers and the associated formation of a Moire pattern has been the dominant method used to study these topological channels, but heterostrain can also give rise to similar stacking domains and interfaces. Here, we theoretically study the electronic structure of a uniaxially heterostrained bilayer graphene. We discuss the formation and evolution of interface-localized channels in the one-dimensional Moire pattern that emerges due to the different stacking registries between the two layers. We find that a uniform heterostrain is not sufficient to create one-dimensional topological channels in biased bilayer graphene. Instead, using a simple model to account for the in-plane atomic reconstruction driven by the changing stacking registry, we show that the resulting expanded Bernal-stacked domains and sharper interfaces are required for robust topological interfaces to emerge. These states are highly localised in the AA- or SP-stacked interface regions and exhibit differences in their layer and sublattice distribution depending on the interface stacking. We conclude that heterostrain can be used as a mechanism to tune the presence and distribution of topological channels in gapped bilayer graphene systems, complementary to the field of twistronics.
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Submitted 4 September, 2023;
originally announced September 2023.
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The emergence of interface states in graphene/transition metal dichalcogenides heterostructure with lateral interface
Authors:
Zahra Khatibi,
Stephen R. Power
Abstract:
The relative strength of different proximity spin-orbit couplings in graphene on transition metal dichalcogenides (TMDC) can be tuned via the metal composition in the TMDC layer. While Gr/MoSe$_2$, has a normal gap, proximity to WSe$_2$ instead leads to valley-Zeeman-driven inverted bands. Although the $\mathbb{Z}_2$ index vanishes, these systems enable a concentration-dependent topological crosso…
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The relative strength of different proximity spin-orbit couplings in graphene on transition metal dichalcogenides (TMDC) can be tuned via the metal composition in the TMDC layer. While Gr/MoSe$_2$, has a normal gap, proximity to WSe$_2$ instead leads to valley-Zeeman-driven inverted bands. Although the $\mathbb{Z}_2$ index vanishes, these systems enable a concentration-dependent topological crossover with band gap closure when graphene is stacked on a composite or alloyed TMDC layer. This is due to a nonzero Berry curvature at the individual valleys and a change of the valley Chern index at a critical composition ratio. Therefore, inherently, we also expect that stacked heterostructures of graphene on composite TMDC layers should host localised boundary modes due to the presence of Gr/WSe$_2$- and Gr/MoSe$_2$-like domains with opposite valley Chern indices. In this study, we show that a Gr/(Mo-W)Se$_2$ heterostructure with a lateral interface in the TMDC layer can indeed host topologically protected in-gap propagating modes, similar to those at the border of commensurate AB and BA domains in biased minimally-twisted bilayer graphene. However, the stability of these modes depends crucially on the system size. We demonstrate that the electronic behaviour of Gr/(Mo-W)Se$_2$ heterostructures evolves from a homogeneous effective medium to a superposition of domain-localised bands and zero-energy branch crossings as the domain size in the alloyed TMDC layer is increased.
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Submitted 12 April, 2023;
originally announced April 2023.
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Proximity spin-orbit coupling in graphene on alloyed transition metal dichalcogenides
Authors:
Zahra Khatibi,
Stephen R. Power
Abstract:
The negligible intrinsic spin-orbit coupling (SOC) in graphene can be enhanced by proximity effects in stacked heterostructures of graphene and transition metal dichalcogenides (TMDCs). The composition of the TMDC layer plays a key role in determining the nature and strength of the resultant SOC induced in the graphene layer. Here, we study the evolution of the proximity-induced SOC as the TMDC la…
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The negligible intrinsic spin-orbit coupling (SOC) in graphene can be enhanced by proximity effects in stacked heterostructures of graphene and transition metal dichalcogenides (TMDCs). The composition of the TMDC layer plays a key role in determining the nature and strength of the resultant SOC induced in the graphene layer. Here, we study the evolution of the proximity-induced SOC as the TMDC layer is deliberately defected. Alloyed ${\rm G/W_χMo_{1-χ}Se_2}$ heterostructures with diverse compositions ($χ$) and defect distributions are simulated using density functional theory. Comparison with continuum and tight-binding models allows both local and global signatures of the metal-atom alloying to be clarified. Our findings show that, despite some dramatic perturbation of local parameters for individual defects, the low-energy spin and electronic behaviour follow a simple effective medium model which depends only on the composition ratio of the metallic species in the TMDC layer. Furthermore, we demonstrate that the topological state of such alloyed systems can be feasibly tuned by controlling this ratio.
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Submitted 30 June, 2022;
originally announced June 2022.
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Strain-induced stacking transition in bilayer graphene
Authors:
Nina C. Georgoulea,
Stephen R. Power,
Nuala M. Caffrey
Abstract:
Strain, both naturally occurring and deliberately engineered, can have a considerable effect on the structural and electronic properties of 2D and layered materials. Uniaxial or biaxial heterostrain modifies the stacking arrangement of bilayer graphene (BLG) which subsequently influences the electronic structure of the bilayer. Here, we use Density Functional Theory (DFT) calculations to investiga…
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Strain, both naturally occurring and deliberately engineered, can have a considerable effect on the structural and electronic properties of 2D and layered materials. Uniaxial or biaxial heterostrain modifies the stacking arrangement of bilayer graphene (BLG) which subsequently influences the electronic structure of the bilayer. Here, we use Density Functional Theory (DFT) calculations to investigate the interplay between an external applied heterostrain and the resulting stacking in BLG. We determine how a strain applied to one layer is transferred to a second, 'free' layer and at what critical strain the ground-state AB-stacking is disrupted. To overcome limitations introduced by periodic boundary conditions, we consider an approximate system consisting of an infinite graphene sheet and an armchair graphene nanoribbon (AGNR). We find that above a critical strain of ~1%, it is energetically favourable for the free layer to be unstrained, indicating a transition between uniform AB-stacking and non-uniform mixed stacking. This is in agreement with a simple model estimate based on the individual energy contributions of strain and stacking effects. Our findings suggest that small levels of strain provide a platform to reversibly engineer stacking order and Moiré features in bilayers, providing a viable alternative to twistronics to engineer topological and exotic physical phenomena in such systems.
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Submitted 3 June, 2022;
originally announced June 2022.
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Predicting magnetic edge behaviour in graphene using neural networks
Authors:
Meriç E. Kucukbas,
Seán McCann,
Stephen R. Power
Abstract:
Magnetic moments near zigzag edges in graphene allow complex nanostructures with customised spin properties to be realised. However, computational costs restrict theoretical investigations to small or perfectly periodic structures. Here we demonstrate that a machine-learning approach, using only geometric input, can accurately estimate magnetic moment profiles, allowing arbitrarily large and disor…
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Magnetic moments near zigzag edges in graphene allow complex nanostructures with customised spin properties to be realised. However, computational costs restrict theoretical investigations to small or perfectly periodic structures. Here we demonstrate that a machine-learning approach, using only geometric input, can accurately estimate magnetic moment profiles, allowing arbitrarily large and disordered systems to be quickly simulated. Excellent agreement is found with mean-field Hubbard calculations, and important electronic, magnetic and transport properties are reproduced using the estimated profiles. This approach allows the magnetic moments of experimental-scale systems to be quickly and accurately predicted, and will speed-up the identification of promising geometries for spintronic applications. While machine-learning approaches to many-body interactions have largely been limited to exact solutions of complex models at very small scales, this work establishes that they can be successfully applied at very large scales at mean-field levels of accuracy.
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Submitted 28 April, 2022;
originally announced April 2022.
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Have Mysterious Topological Valley Currents Been Observed in Graphene Superlattices?
Authors:
Stephan Roche,
Stephen R. Power,
Branislav K. Nikolić,
José Hugo García,
Antti-Pekka Jauho
Abstract:
We provide a critical discussion concerning the claim of topological valley currents, driven by a global Berry curvature and valley Hall effect proposed in recent literature. After pointing out a major inconsistency of the theoretical scenario proposed to interpret giant nonlocal resistance, we discuss various possible alternative explanations and open directions of research to solve the mystery o…
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We provide a critical discussion concerning the claim of topological valley currents, driven by a global Berry curvature and valley Hall effect proposed in recent literature. After pointing out a major inconsistency of the theoretical scenario proposed to interpret giant nonlocal resistance, we discuss various possible alternative explanations and open directions of research to solve the mystery of nonlocal transport in graphene superlattices.
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Submitted 16 November, 2021;
originally announced November 2021.
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Valley current generation using biased bilayer graphene dots
Authors:
Fionnuala Solomon,
Stephen R. Power
Abstract:
Intrinsic and extrinsic valley Hall effects are predicted to emerge in graphene systems with uniform or spatially-varying mass terms. Extrinsic mechanisms, mediated by the valley-dependent scattering of electrons at the Fermi surface, can be directly linked to quantum transport simulations. This is a promising route towards more complete experimental investigation of valleytronic phenomena in grap…
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Intrinsic and extrinsic valley Hall effects are predicted to emerge in graphene systems with uniform or spatially-varying mass terms. Extrinsic mechanisms, mediated by the valley-dependent scattering of electrons at the Fermi surface, can be directly linked to quantum transport simulations. This is a promising route towards more complete experimental investigation of valleytronic phenomena in graphene, but a major obstacle is the difficulty in applying the sublattice-dependent potentials required. Here we show that strongly valley-dependent scattering also emerges from bilayer graphene quantum dots, where the gap size can be easily modulated using the interlayer potentials in dual-gated devices. Robust valley-dependent scattering and concomitant valley currents are observed for a range of systems, and we investigate the role of dot size, mass strength and additional potential terms. Finally, we note that a strong valley splitting of electronic current also emerges when a biased bilayer dot is embedded in a single layer of graphene, but that the effect is less robust than for a bilayer host. Our findings suggest that bilayer graphene devices with custom mass profiles provide an excellent platform for future valleytronic exploration of two-dimensional materials.
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Submitted 24 May, 2021;
originally announced May 2021.
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Nonlocal Spin Dynamics in the Crossover from Diffusive to Ballistic Transport
Authors:
Marc Vila,
Jose H. Garcia,
Aron W. Cummings,
Stephen R. Power,
Christoph W. Groth,
Xavier Waintal,
Stephan Roche
Abstract:
Improved fabrication techniques have enabled the possibility of ballistic transport and unprecedented spin manipulation in ultraclean graphene devices. Spin transport in graphene is typically probed in a nonlocal spin valve and is analyzed using spin diffusion theory, but this theory is not necessarily applicable when charge transport becomes ballistic or when the spin diffusion length is exceptio…
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Improved fabrication techniques have enabled the possibility of ballistic transport and unprecedented spin manipulation in ultraclean graphene devices. Spin transport in graphene is typically probed in a nonlocal spin valve and is analyzed using spin diffusion theory, but this theory is not necessarily applicable when charge transport becomes ballistic or when the spin diffusion length is exceptionally long. Here, we study these regimes by performing quantum simulations of graphene nonlocal spin valves. We find that conventional spin diffusion theory fails to capture the crossover to the ballistic regime as well as the limit of long spin diffusion length. We show that the latter can be described by an extension of the current theoretical framework. Finally, by covering the whole range of spin dynamics, our study opens a new perspective to predict and scrutinize spin transport in graphene and other two-dimensional material-based ultraclean devices.
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Submitted 22 May, 2020; v1 submitted 14 October, 2019;
originally announced October 2019.
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Valley Hall Effect and Non-Local Resistance in Locally Gapped Graphene
Authors:
Thomas Aktor,
Jose H. Garcia,
Stephan Roche,
Antti-Pekka Jauho,
Stephen R. Power
Abstract:
We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a combination of quantum transport formalisms, giving access to bulk properties as well as multi-terminal device responses, the presence of a non-uniform local bandga…
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We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a combination of quantum transport formalisms, giving access to bulk properties as well as multi-terminal device responses, the presence of a non-uniform local bandgap is shown to give rise to valley-dependent scattering and a finite Fermi surface contribution to the valley Hall conductivity, related to characteristics of $R_\mathrm{NL}$. These features are robust against disorder and provide a plausible interpretation of controversial experiments in graphene/hBN superlattices. Our findings suggest both an alternative mechanism for the generation of valley Hall effect in graphene, and a route towards valley-dependent electron optics, by materials and device engineering.
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Submitted 25 January, 2021; v1 submitted 1 October, 2019;
originally announced October 2019.
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Gate electrostatics and quantum capacitance in ballistic graphene devices
Authors:
José M. Caridad,
Stephen R. Power,
Artsem A. Shylau,
Lene Gammelgaard,
Antti-Pekka Jauho,
Peter Bøggild
Abstract:
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that devices with large edge disorder exhibit a nearly homogeneous capacitance profile across the device channel, close to the case of an infinitely large graphene she…
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We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that devices with large edge disorder exhibit a nearly homogeneous capacitance profile across the device channel, close to the case of an infinitely large graphene sheet. In contrast, devices with lower edge disorder (< 1 nm roughness) are strongly influenced by the fringing electrostatic field at graphene boundaries, in quantitative agreement with theoretical calculations for pristine systems. Specifically, devices with low edge disorder present a large effective capacitance variation across the device channel with a nontrivial, inhomogeneous profile due not only to classical electrostatics but also to quantum mechanical effects. We show that such quantum capacitance contribution, occurring due to the low density of states (DOS) across the device in the presence of an external magnetic field, is considerably altered as a result of the gate electrostatics in the ballistic graphene device. Our conclusions can be extended to any two dimensional (2D) electronic system confined by a hard-wall potential and are important for understanding the electronic structure and device applications of conducting 2D materials.
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Submitted 1 May, 2019;
originally announced May 2019.
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Charge and Spin Transport Anisotropy in Nanopatterned Graphene
Authors:
Soren Schou Gregersen,
Jose H. Garcia,
Antti-Pekka Jauho,
Stephan Roche,
Stephen R. Power
Abstract:
Anisotropic electronic transport is a possible route towards nanoscale circuitry design, particularly in two-dimensional materials. Proposals to introduce such a feature in patterned graphene have to date relied on large-scale structural inhomogeneities. Here we theoretically explore how a random, yet homogeneous, distribution of zigzag-edged triangular perforations can generate spatial anisotropi…
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Anisotropic electronic transport is a possible route towards nanoscale circuitry design, particularly in two-dimensional materials. Proposals to introduce such a feature in patterned graphene have to date relied on large-scale structural inhomogeneities. Here we theoretically explore how a random, yet homogeneous, distribution of zigzag-edged triangular perforations can generate spatial anisotropies in both charge and spin transport. Anisotropic electronic transport is found to persist under considerable disordering of the perforation edges, suggesting its viability under realistic experimental conditions. Furthermore, controlling the relative orientation of perforations enables spin filtering of the transmitted electrons, resulting in a half-metallic anisotropic transport regime. Our findings point towards a co-integration of charge and spin control in a two-dimensional platform of relevance for nanocircuit design. We further highlight how geometrical effects allow finite samples to display finite transverse resistances, reminiscent of Spin Hall effects, in the absence of any bulk fingerprints of such mechanisms, and explore the underlying symmetries behind this behaviour.
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Submitted 6 December, 2018;
originally announced December 2018.
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Probing the nanoscale origin of strain and doping in graphene-hBN heterostructures
Authors:
Tom Vincent,
Vishal Panchal,
Tim Booth,
Stephen R. Power,
Antti-Pekka Jauho,
Vladimir Antonov,
Olga Kazakova
Abstract:
We use confocal Raman microscopy and modified vector analysis methods to investigate the nanoscale origin of strain and carrier concentration in exfoliated graphene-hexagonal boron nitride (hBN) heterostructures on silicon dioxide (SiO2). Two types of heterostructures are studied: graphene on SiO2 partially coved by hBN, and graphene fully encapsulated between two hBN flakes. We extend the vector…
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We use confocal Raman microscopy and modified vector analysis methods to investigate the nanoscale origin of strain and carrier concentration in exfoliated graphene-hexagonal boron nitride (hBN) heterostructures on silicon dioxide (SiO2). Two types of heterostructures are studied: graphene on SiO2 partially coved by hBN, and graphene fully encapsulated between two hBN flakes. We extend the vector analysis methods to produce spatial maps of the strain and doping variation across the heterostructures. This allows us to visualise and directly quantify the much-speculated effect of the environment on carrier concentration as well as strain in graphene. Moreover, we demonstrate that variations in strain and carrier concentration in graphene arise from nanoscale features of the heterostructures such as fractures, folds and bubbles trapped between layers. For bubbles in hBN-encapsulated graphene, hydrostatic strain is shown to be greatest at bubble centres, whereas the maximum of carrier concentration is localised at bubble edges. Raman spectroscopy is shown to be a non-invasive tool for probing strain and doping in graphene, which could prove useful for engineering of two-dimensional devices.
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Submitted 31 October, 2018;
originally announced October 2018.
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One-dimensional ferromagnetic edge contacts to two-dimensional graphene/h-BN heterostructures
Authors:
Bogdan Karpiak,
André Dankert,
Aron W. Cummings,
Stephen R. Power,
Stephan Roche,
Saroj P. Dash
Abstract:
We report the fabrication of one-dimensional (1D) ferromagnetic edge contacts to two-dimensional (2D) graphene/h-BN heterostructures. While aiming to study spin injection/detection with 1D edge contacts, a spurious magnetoresistance signal was observed, which is found to originate from the local Hall effect in graphene due to fringe fields from ferromagnetic edge contacts and in the presence of ch…
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We report the fabrication of one-dimensional (1D) ferromagnetic edge contacts to two-dimensional (2D) graphene/h-BN heterostructures. While aiming to study spin injection/detection with 1D edge contacts, a spurious magnetoresistance signal was observed, which is found to originate from the local Hall effect in graphene due to fringe fields from ferromagnetic edge contacts and in the presence of charge current spreading in the nonlocal measurement configuration. Such behavior has been confirmed by the absence of a Hanle signal and gate-dependent magnetoresistance measurements that reveal a change in sign of the signal for the electron- and hole-doped regimes, which is in contrast to the expected behavior of the spin signal. Calculations show that the contact-induced fringe fields are typically on the order of hundreds of mT, but can be reduced below 100 mT with careful optimization of the contact geometry. There may be additional contribution from magnetoresistance effects due to tunneling anisotropy in the contacts, which need to be further investigated. These studies are useful for optimization of spin injection and detection in 2D material heterostructures through 1D edge contacts.
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Submitted 25 April, 2018;
originally announced April 2018.
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Scale-invariant large nonlocality in polycrystalline graphene
Authors:
Mário Ribeiro,
Stephen R. Power,
Stephan Roche,
Luis. E. Hueso,
Fèlix Casanova
Abstract:
The observation of large nonlocal resistances near the Dirac point in graphene has been related to a variety of intrinsic Hall effects, where the spin or valley degrees of freedom are controlled by symmetry breaking mechanisms. Engineering strong spin or valley Hall signals on scalable graphene devices could stimulate further practical developments of spin- and valleytronics. Here we report on sca…
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The observation of large nonlocal resistances near the Dirac point in graphene has been related to a variety of intrinsic Hall effects, where the spin or valley degrees of freedom are controlled by symmetry breaking mechanisms. Engineering strong spin or valley Hall signals on scalable graphene devices could stimulate further practical developments of spin- and valleytronics. Here we report on scale-invariant nonlocal transport in large-scale chemical vapour deposition graphene under an applied external magnetic field. Contrary to previously reported Zeeman spin Hall effect, our results are explained by field-induced spin-filtered edge states whose sensitivity to grain boundaries manifests in the nonlocal resistance. This phenomenon, related to the emergence of the quantum Hall regime, persists up to the millimeter scale, showing that polycrystalline morphology can be imprinted in nonlocal transport. This suggests that topological Hall effects in large-scale graphene materials are highly sensitive to the underlying structural morphology, limiting practical realizations.
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Submitted 21 November, 2017; v1 submitted 8 June, 2017;
originally announced June 2017.
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Electron trajectories and magnetotransport in nanopatterned graphene under commensurability conditions
Authors:
Stephen R. Power,
Morten Rishøj Thomsen,
Antti-Pekka Jauho,
Thomas Garm Pedersen
Abstract:
Commensurability oscillations in the magnetotransport of periodically patterned systems, emerging from the interplay of cyclotron orbit and the pattern periodicity, are a benchmark of mesoscopic physics in electron gas systems. Exploiting similar effects in 2D materials would allow exceptional control of electron behaviour, but is hindered by the requirement to maintain ballistic transport over la…
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Commensurability oscillations in the magnetotransport of periodically patterned systems, emerging from the interplay of cyclotron orbit and the pattern periodicity, are a benchmark of mesoscopic physics in electron gas systems. Exploiting similar effects in 2D materials would allow exceptional control of electron behaviour, but is hindered by the requirement to maintain ballistic transport over large length scales. Recent experiments have overcome this obstacle and observed distinct magnetoresistance commensurability peaks for perforated graphene sheets (antidot lattices). Interpreting the exact mechanisms behind these peaks is of key importance, particularly in graphene where a range of regimes are accessible by varying the electron density. In this work a fully atomistic, device-based simulation of magnetoresistance experiments allows us to analyse both the resistance peaks and the current flow at commensurability conditions. Magnetoresistance spectra are found in excellent agreement with experiment, but we show that a semi-classical analysis, in terms of simple skipping or pinned orbits, is insufficient to fully describe the corresponding electron trajectories. Instead, a generalised mechanism in terms of states bound to individual antidots, or to groups of antidots, is required. Commensurability features are shown to arise when scattering between such states is enhanced. The emergence and suppression of commensurability peaks is explored for different antidot sizes, magnetic field strengths and electron densities. The insights gained from our study will guide the design and optimization of future experiments with nanostructured graphene.
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Submitted 29 August, 2017; v1 submitted 16 March, 2017;
originally announced March 2017.
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Nanostructured graphene for spintronics
Authors:
Søren Schou Gregersen,
Stephen R. Power,
Antti-Pekka Jauho
Abstract:
Zigzag edges of the honeycomb structure of graphene exhibit magnetic polarization making them attractive as building blocks for spintronic devices. Here, we show that devices with zigzag edged triangular antidots perform essential spintronic functionalities, such as spatial spin-splitting or spin filtering of unpolarized incoming currents. Near-perfect performance can be obtained with optimized st…
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Zigzag edges of the honeycomb structure of graphene exhibit magnetic polarization making them attractive as building blocks for spintronic devices. Here, we show that devices with zigzag edged triangular antidots perform essential spintronic functionalities, such as spatial spin-splitting or spin filtering of unpolarized incoming currents. Near-perfect performance can be obtained with optimized structures. The device performance is robust against substantial disorder. The gate-voltage dependence of transverse resistance is qualitatively different for spin-polarized and spin-unpolarized devices, and can be used as a diagnostic tool. Importantly, the suggested devices are feasible within current technologies.
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Submitted 21 March, 2017; v1 submitted 4 March, 2017;
originally announced March 2017.
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Graphene Nanobubbles as Valley Filters and Beamsplitters
Authors:
Mikkel Settnes,
Stephen R. Power,
Mads Brandbyge,
Antti-Pekka Jauho
Abstract:
The low energy band structure of graphene has two inequivalent valleys at K and K' points of the Brillouin zone. The possibility to manipulate this valley degree of freedom defines the field of valleytronics, the valley analogue of spintronics. A key requirement for valleytronic devices is the ability to break the valley degeneracy by filtering and spatially splitting valleys to generate valley po…
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The low energy band structure of graphene has two inequivalent valleys at K and K' points of the Brillouin zone. The possibility to manipulate this valley degree of freedom defines the field of valleytronics, the valley analogue of spintronics. A key requirement for valleytronic devices is the ability to break the valley degeneracy by filtering and spatially splitting valleys to generate valley polarized currents. Here we suggest a way to obtain valley polarization using strain-induced inhomogeneous pseudomagnetic fields (PMF) which act differently on the two valleys. Notably, the suggested method does not involve external magnetic fields, or magnetic materials, as previous proposals.
In our proposal the strain is due to experimentally feasible nanobubbles (but any local deformation would do): the associated PMFs lead to different real space trajectories for K and K' electrons, thus allowing the two valleys to be addressed individually. In this way, graphene nanobubbles can be exploited in both valley filtering and valley splitting devices, and our simulations reveal that a number of different functionalities are possible depending on the deformation field.
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Submitted 10 January, 2017; v1 submitted 16 August, 2016;
originally announced August 2016.
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Magnetic edge states and magnetotransport in graphene antidot barriers
Authors:
Morten Rishøj Thomsen,
Stephen Robert Power,
Antti-Pekka Jauho,
Thomas Garm Pedersen
Abstract:
Magnetic fields are often used for characterizing transport in nanoscale materials. Recent magnetotransport experiments have demonstrated that ballistic transport is possible in graphene antidot lattices (GALs). These experiments have inspired the present theoretical study of GALs in a perpendicular magnetic field. We calculate magnetotransport through graphene antidot barriers (GABs), which are f…
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Magnetic fields are often used for characterizing transport in nanoscale materials. Recent magnetotransport experiments have demonstrated that ballistic transport is possible in graphene antidot lattices (GALs). These experiments have inspired the present theoretical study of GALs in a perpendicular magnetic field. We calculate magnetotransport through graphene antidot barriers (GABs), which are finite rows of antidots arranged periodically in a pristine graphene sheet, using a tight-binding model and the Landauer-Büttiker formula. We show that GABs behave as ideal Dirac mass barriers for antidots smaller than the magnetic length, and demonstrate the presence of magnetic edge states, which are localized states on the periphery of the antidots due to successive reflections on the antidot edge in the presence of a magnetic field. We show that these states are robust against variations in lattice configuration and antidot edge chirality. Moreover, we calculate the transmittance of disordered GABs and find that magnetic edge states survive a moderate degree of disorder. Due to the long phase-coherence length in graphene and the robustness of these states, we expect magnetic edge states to be observable in experiments as well.
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Submitted 13 May, 2016;
originally announced May 2016.
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Electron interference in ballistic graphene nanoconstrictions
Authors:
Jens Baringhaus,
Mikkel Settnes,
Johannes Aprojanz,
Stephen R. Power,
Antti-Pekka Jauho,
Christoph Tegenkamp
Abstract:
We have realized nanometer size constrictions in ballistic graphene nanoribbons grown on sidewalls of SiC mesa structures. The high quality of our devices allows the observation of a number of electronic quantum interference phenomena. The transmissions of Fabry-Perot like resonances were probed by in-situ transport measurements at various temperatures. The energies of the resonances are determine…
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We have realized nanometer size constrictions in ballistic graphene nanoribbons grown on sidewalls of SiC mesa structures. The high quality of our devices allows the observation of a number of electronic quantum interference phenomena. The transmissions of Fabry-Perot like resonances were probed by in-situ transport measurements at various temperatures. The energies of the resonances are determined by the size of the constrictions which can be controlled precisely using STM lithography. The temperature and size dependence of the measured conductances are in quantitative agreement with tight-binding calculations. The fact that these interference effects are visible even at room temperature makes the reported devices attractive as building blocks for future carbon based electronics.
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Submitted 4 May, 2016;
originally announced May 2016.
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Robust band gap and half-metallicity in graphene with triangular perforations
Authors:
Søren Schou Gregersen,
Stephen R. Power,
Antti-Pekka Jauho
Abstract:
Ideal graphene antidot lattices are predicted to show promising band gap behavior (i.e., $E_G\simeq 500$ meV) under carefully specified conditions. However, for the structures studied so far this behavior is critically dependent on superlattice geometry and is not robust against experimentally realistic disorders. Here we study a rectangular array of triangular antidots with zigzag edge geometries…
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Ideal graphene antidot lattices are predicted to show promising band gap behavior (i.e., $E_G\simeq 500$ meV) under carefully specified conditions. However, for the structures studied so far this behavior is critically dependent on superlattice geometry and is not robust against experimentally realistic disorders. Here we study a rectangular array of triangular antidots with zigzag edge geometries and show that their band gap behavior qualitatively differs from the standard behavior which is exhibited, e.g, by rectangular arrays of armchair-edged triangles. In the spin unpolarized case, zigzag-edged antidots give rise to large band gaps compared to armchair-edged antidots, irrespective of the rules which govern the existence of gaps in armchair-edged antidot lattices. In addition the zigzag-edged antidots appear more robust than armchair-edged antidots in the presence of geometrical disorder. The inclusion of spin polarization within a mean-field Hubbard approach gives rise to a large overall magnetic moment at each antidot due to the sublattice imbalance imposed by the triangular geometry. Half-metallic behavior arises from the formation of spin-split dispersive states near the Fermi energy, reducing the band gaps compared to the unpolarized case. This behavior is also found to be robust in the presence of disorder. Our results highlight the possibilities of using triangular perforations in graphene to open electronic band gaps in systems with experimentally realistic levels of disorder, and furthermore, of exploiting the strong spin dependence of the system for spintronic applications.
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Submitted 27 June, 2016; v1 submitted 21 March, 2016;
originally announced March 2016.
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Pseudomagnetic fields and triaxial strain in graphene
Authors:
Mikkel Settnes,
Stephen R. Power,
Antti-Pekka Jauho
Abstract:
Strain fields in graphene giving rise to pseudomagnetic fields have received much attention due to the possibility of mimicking real magnetic fields with magnitudes of greater than 100 Tesla. We examine systems with such strains confined to finite regions ("pseudomagnetic dots") and provide a transparent explanation for the characteristic sublattice polarization occurring in the presence of pseudo…
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Strain fields in graphene giving rise to pseudomagnetic fields have received much attention due to the possibility of mimicking real magnetic fields with magnitudes of greater than 100 Tesla. We examine systems with such strains confined to finite regions ("pseudomagnetic dots") and provide a transparent explanation for the characteristic sublattice polarization occurring in the presence of pseudomagnetic field. In particular, we focus on a triaxial strain leading to a constant field in the central region of the dot. This field causes the formation of pseudo Landau levels, where the zeroth order level shows significant differences compared to the corresponding level in a real magnetic field. Analytic arguments based on the Dirac model are employed to predict the sublattice and valley dependencies of the density of states in these systems. Numerical tight binding calculations of single pseudomagnetic dots in extended graphene sheets confirm these predictions, and are also used to study the effect of the rotating the strain direction and varying the size of the pseudomagnetic dot.
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Submitted 27 October, 2015;
originally announced October 2015.
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Bubbles in graphene - a computational study
Authors:
Mikkel Settnes,
Stephen R. Power,
Jun Lin,
Dirch H. Petersen,
Antti-Pekka Jauho
Abstract:
Strain-induced deformations in graphene are predicted to give rise to large pseudomagnetic fields. We examine theoretically the case of gas-inflated bubbles to determine whether signatures of such fields are present in the local density of states. Sharp-edged bubbles are found to induce Friedel-type oscillations which can envelope pseudo-Landau level features in certain regions of the bubble. Howe…
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Strain-induced deformations in graphene are predicted to give rise to large pseudomagnetic fields. We examine theoretically the case of gas-inflated bubbles to determine whether signatures of such fields are present in the local density of states. Sharp-edged bubbles are found to induce Friedel-type oscillations which can envelope pseudo-Landau level features in certain regions of the bubble. However, bubbles which minimise interference effects are also unsuitable for pseudo-Landau level formation due to more spatially varying field profiles.
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Submitted 22 June, 2015;
originally announced June 2015.
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Strain-Modified RKKY Interaction in Carbon Nanotubes
Authors:
P. D. Gorman,
J. M. Duffy,
S. R. Power,
M. S. Ferreira
Abstract:
For low-dimensional metallic structures, such as nanotubes, the exchange coupling between localized magnetic dopants is predicted to decay slowly with separation. The long-range character of this interaction plays a significant role in determining the magnetic order of the system. It has previously been shown that the interaction range depends on the conformation of the magnetic dopants in both gr…
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For low-dimensional metallic structures, such as nanotubes, the exchange coupling between localized magnetic dopants is predicted to decay slowly with separation. The long-range character of this interaction plays a significant role in determining the magnetic order of the system. It has previously been shown that the interaction range depends on the conformation of the magnetic dopants in both graphene and nanotubes. Here we examine the RKKY interaction in carbon nanotubes in the presence of uniaxial strain for a range of different impurity configurations. We show that strain is capable of amplifying or attenuating the RKKY interaction, significantly increasing certain interaction ranges, and acting as a switch: effectively turning on or off the interaction. We argue that uniaxial strain can be employed to significantly manipulate magnetic interactions in carbon nanotubes, allowing an interplay between mechanical and magnetic properties in future spintronic devices. We also examine the dimensional relationship between graphene and nanotubes with regards to the decay rate of the RKKY interaction.
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Submitted 12 May, 2015;
originally announced May 2015.
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Electronic transport in graphene nanoribbons with sublattice-asymmetric doping
Authors:
Thomas Aktor,
Antti-Pekka Jauho,
Stephen R. Power
Abstract:
Recent experimental findings and theoretical predictions suggest that nitrogen-doped CVD-grown graphene may give rise to electronic band gaps due to impurity distributions which favour segregation on a single sublattice. Here we demonstrate theoretically that such distributions give rise to more complex behaviour in the presence of edges, where geometry determines whether electrons in the sample v…
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Recent experimental findings and theoretical predictions suggest that nitrogen-doped CVD-grown graphene may give rise to electronic band gaps due to impurity distributions which favour segregation on a single sublattice. Here we demonstrate theoretically that such distributions give rise to more complex behaviour in the presence of edges, where geometry determines whether electrons in the sample view the impurities as a gap-opening average potential or as scatterers. Zigzag edges give rise to the latter case, and remove the electronic bandgaps predicted in extended graphene samples. We predict that such behaviour will give rise to leakage near grain boundaries with a similar geometry or in zigzag-edged etched devices. Furthermore, we examine the formation of one-dimensional metallic channels at interfaces between different sublattice domains, which should be observable experimentally and offer intriguing waveguiding possibilities.
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Submitted 8 February, 2016; v1 submitted 14 April, 2015;
originally announced April 2015.
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Patched Green's function techniques for two dimensional systems: Electronic behaviour of bubbles and perforations in graphene
Authors:
Mikkel Settnes,
Stephen R. Power,
Jun Lin,
Dirch H. Petersen,
Antti-Pekka Jauho
Abstract:
We present a numerically efficient technique to evaluate the Green's function for extended two dimensional systems without relying on periodic boundary conditions. Different regions of interest, or `patches', are connected using self energy terms which encode the information of the extended parts of the system. The calculation scheme uses a combination of analytic expressions for the Green's funct…
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We present a numerically efficient technique to evaluate the Green's function for extended two dimensional systems without relying on periodic boundary conditions. Different regions of interest, or `patches', are connected using self energy terms which encode the information of the extended parts of the system. The calculation scheme uses a combination of analytic expressions for the Green's function of infinite pristine systems and an adaptive recursive Green's function technique for the patches. The method allows for an efficient calculation of both local electronic and transport properties, as well as the inclusion of multiple probes in arbitrary geometries embedded in extended samples. We apply the Patched Green's function method to evaluate the local densities of states and transmission properties of graphene systems with two kinds of deviations from the pristine structure: bubbles and perforations with characteristic dimensions of the order of 10-25 nm, i.e. including hundreds of thousands of atoms. The strain field induced by a bubble is treated beyond an effective Dirac model, and we demonstrate the existence of both Friedel-type oscillations arising from the edges of the bubble, as well as pseudo-Landau levels related to the pseudomagnetic field induced by the nonuniform strain. Secondly, we compute the transport properties of a large perforation with atomic positions extracted from a TEM image, and show that current vortices may form near the zigzag segments of the perforation.
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Submitted 24 January, 2015;
originally announced January 2015.
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Graphene on graphene antidot lattices: Electronic and transport properties
Authors:
Søren Schou Gregersen,
Jesper Goor Pedersen,
Stephen R. Power,
Antti-Pekka Jauho
Abstract:
Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken, by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion. Here, we introduce a novel bilayer graphene heterostructure, where single-layer graphene is placed on top of another layer of graphene with a regular lattice o…
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Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken, by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion. Here, we introduce a novel bilayer graphene heterostructure, where single-layer graphene is placed on top of another layer of graphene with a regular lattice of antidots. We dub this class of graphene systems GOAL: graphene on graphene antidot lattice. By varying the structure geometry, band structure engineering can be performed to obtain linearly dispersing bands (with a high concomitant mobility), which nevertheless can be made gapped with the perpendicular field. We analyze the electronic structure and transport properties of various types of GOALs, and draw general conclusions about their properties to aid their design in experiments.
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Submitted 2 July, 2015; v1 submitted 20 October, 2014;
originally announced October 2014.
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Electronic transport in disordered graphene antidot lattice devices
Authors:
Stephen R. Power,
Antti-Pekka Jauho
Abstract:
Nanostructuring of graphene is in part motivated by the requirement to open a gap in the electronic band structure. In particular, a periodically perforated graphene sheet in the form of an antidot lattice may have such a gap. Such systems have been investigated with a view towards application in transistor or waveguiding devices. The desired properties have been predicted for atomically precise s…
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Nanostructuring of graphene is in part motivated by the requirement to open a gap in the electronic band structure. In particular, a periodically perforated graphene sheet in the form of an antidot lattice may have such a gap. Such systems have been investigated with a view towards application in transistor or waveguiding devices. The desired properties have been predicted for atomically precise systems, but fabrication methods will introduce significant levels of disorder in the shape, position and edge configurations of individual antidots. We calculate the electronic transport properties of a wide range of finite graphene antidot devices to determine the effect of such disorders on their performance. Modest geometric disorder is seen to have a detrimental effect on devices containing small, tightly packed antidots, which have optimal performance in pristine lattices. Larger antidots display a range of effects which strongly depend on their edge geometry. Antidot systems with armchair edges are seen to have a far more robust transport gap than those composed from zigzag or mixed edge antidots. The role of disorder in waveguide geometries is slightly different and can enhance performance by extending the energy range over which waveguiding behavior is observed.
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Submitted 8 September, 2014; v1 submitted 1 July, 2014;
originally announced July 2014.
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RKKY interaction between extended magnetic defect lines in graphene
Authors:
Paul D. Gorman,
John M. Duffy,
Stephen R. Power,
Mauro S. Ferreira
Abstract:
Of fundamental interest in the field of spintronics is the mechanism of indirect exchange coupling between magnetic impurities embedded in metallic hosts. A range of physical features, such as magnetotransport and overall magnetic moment formation, are predicated upon this magnetic coupling, often referred to as the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. Recent theoretical studies on th…
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Of fundamental interest in the field of spintronics is the mechanism of indirect exchange coupling between magnetic impurities embedded in metallic hosts. A range of physical features, such as magnetotransport and overall magnetic moment formation, are predicated upon this magnetic coupling, often referred to as the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. Recent theoretical studies on the RKKY in graphene have been motivated by possible spintronic applications of magnetically doped graphene systems. In this work a combination of analytic and numerical techniques are used to examine the effects of defect dimensionality on such an interaction. We show, in a mathematically transparent manner, that moving from single magnetic impurities to extended lines of impurities effectively reduces the dimensionality of the system and increases the range of the interaction. This has important consequences for the spintronic application of magnetically-doped and we illustrate this with a simple magnetoresistance device.
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Submitted 3 June, 2014;
originally announced June 2014.
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Sublattice imbalance of substitutionally doped nitrogen in graphene
Authors:
James A. Lawlor,
Paul D. Gorman,
Stephen R. Power,
Claudionor G. Bezerra,
Mauro S. Ferreira
Abstract:
Motivated by the recently observed sublattice asymmetry of substitutional nitrogen impurities in CVD grown graphene, we show, in a mathematically transparent manner, that oscillations in the local density of states driven by the presence of substitutional impurities are responsible for breaking the sublattice symmetry. While these oscillations are normally averaged out in the case of randomly disp…
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Motivated by the recently observed sublattice asymmetry of substitutional nitrogen impurities in CVD grown graphene, we show, in a mathematically transparent manner, that oscillations in the local density of states driven by the presence of substitutional impurities are responsible for breaking the sublattice symmetry. While these oscillations are normally averaged out in the case of randomly dispersed impurities, in graphene they have either the same, or very nearly the same, periodicity as the lattice. As a result, the total interaction energy of randomly distributed impurities embedded in the conduction-electron-filled medium does not vanish and is lowered when their configuration is sublattice-asymmetric. We also identify the presence of a critical concentration of nitrogen above which one should expect the sublattice asymmetry to disappear. This feature is not particular to nitrogen dopants, but should be present in other impurities.
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Submitted 20 May, 2014;
originally announced May 2014.
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Dual-probe spectroscopic fingerprints of defects in graphene
Authors:
Mikkel Settnes,
Stephen R. Power,
Dirch H. Petersen,
Antti-Pekka Jauho
Abstract:
Recent advances in experimental techniques emphasize the usefulness of multiple scanning probe techniques when analyzing nanoscale samples. Here, we analyze theoretically dual-probe setups with probe separations in the nanometer range, i.e., in a regime where quantum coherence effects can be observed at low temperatures. In a dual-probe setup the electrons are injected at one probe and collected a…
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Recent advances in experimental techniques emphasize the usefulness of multiple scanning probe techniques when analyzing nanoscale samples. Here, we analyze theoretically dual-probe setups with probe separations in the nanometer range, i.e., in a regime where quantum coherence effects can be observed at low temperatures. In a dual-probe setup the electrons are injected at one probe and collected at the other. The measured conductance reflects the local transport properties on the nanoscale, thereby yielding information complementary to that obtained with a standard one-probe setup (the local density-of-states). In this work we develop a real space Green's function method to compute the conductance. This requires an extension of the standard calculation schemes, which typically address a finite sample between the probes. In contrast, the developed method makes no assumption on the sample size (e.g., an extended graphene sheet). Applying this method, we study the transport anisotropies in pristine graphene sheets, and analyze the spectroscopic fingerprints arising from quantum interference around single-site defects, such as vacancies and adatoms. Furthermore, we demonstrate that the dual-probe setup is a useful tool for characterizing the electronic transport properties of extended defects or designed nanostructures. In particular, we show that nanoscale perforations, or antidots, in a graphene sheet display Fano-type resonances with a strong dependence on the edge geometry of the perforation.
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Submitted 2 May, 2014;
originally announced May 2014.
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Theoretical analysis of a dual-probe scanning tunneling microscope setup on graphene
Authors:
Mikkel Settnes,
Stephen R. Power,
Dirch H. Petersen,
Antti-Pekka Jauho
Abstract:
Experimental advances allow for the inclusion of multiple probes to measure the transport properties of a sample surface. We develop a theory of dual-probe scanning tunnelling microscopy using a Green's Function formalism, and apply it to graphene. Sampling the local conduction properties at finite length scales yields real space conductance maps which show anisotropy for pristine graphene systems…
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Experimental advances allow for the inclusion of multiple probes to measure the transport properties of a sample surface. We develop a theory of dual-probe scanning tunnelling microscopy using a Green's Function formalism, and apply it to graphene. Sampling the local conduction properties at finite length scales yields real space conductance maps which show anisotropy for pristine graphene systems and quantum interference effects in the presence of isolated impurities. The spectral signatures of the Fourier transform of real space conductance maps include characteristics that can be related to different scattering processes. We compute the conductance maps of graphene systems with different edge geometries or height fluctuations to determine the effects of non-ideal graphene samples on dual-probe measurements.
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Submitted 18 July, 2014; v1 submitted 31 January, 2014;
originally announced January 2014.
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Friedel Oscillations in Graphene: Sublattice Asymmetry in Doping
Authors:
James A. Lawlor,
Stephen R. Power,
Mauro S. Ferreira
Abstract:
Symmetry breaking perturbations in an electronically conducting medium are known to produce Friedel oscillations (FOs) in various physical quantities of an otherwise pristine material. Here we show in a mathematically transparent fashion that FOs in graphene have a strong sublattice asymmetry. As a result, the presence of impurities and/or defects may impact the distinct graphene sublattices very…
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Symmetry breaking perturbations in an electronically conducting medium are known to produce Friedel oscillations (FOs) in various physical quantities of an otherwise pristine material. Here we show in a mathematically transparent fashion that FOs in graphene have a strong sublattice asymmetry. As a result, the presence of impurities and/or defects may impact the distinct graphene sublattices very differently. Furthermore, such an asymmetry an be used to explain the recent observations that Nitrogen atoms and dimers are not randomly distributed in graphene but prefer to occupy one of its two distinct sublattices. We argue that this feature is not exclusive of Nitrogen and that it can be seen with other substitutional dopants.
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Submitted 13 September, 2013;
originally announced September 2013.
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Variable range of the RKKY interaction in edged graphene
Authors:
J. M. Duffy,
P. D. Gorman,
S. R. Power,
M. S. Ferreira
Abstract:
The indirect exchange interaction is one of the key factors in determining the overall alignment of magnetic impurities embedded in metallic host materials. In this work we examine the range of this interaction in magnetically-doped graphene systems in the presence of armchair edges using a combination of analytical and numerical Green function (GF) approaches. We consider both a semi-infinite she…
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The indirect exchange interaction is one of the key factors in determining the overall alignment of magnetic impurities embedded in metallic host materials. In this work we examine the range of this interaction in magnetically-doped graphene systems in the presence of armchair edges using a combination of analytical and numerical Green function (GF) approaches. We consider both a semi-infinite sheet of graphene with a single armchair edge, and also quasi-one-dimensional armchair edged graphene nanoribbons (GNRs). While we find signals of the bulk decay rate in semi-infinite graphene and signals of the expected one-dimensional decay rate in GNRs, we also find an unusually rapid decay for certain instances in both, which manifests itself whenever the impurities are located at sites which are a multiple of three atoms from the edge. This decay behavior emerges from both the analytic and numerical calculations, and the result for semi-infinite graphene can be interpreted as an intermediate case between ribbon and bulk systems.
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Submitted 29 August, 2013;
originally announced August 2013.
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RKKY interaction between adsorbed magnetic impurities in graphene: symmetry and strain effects
Authors:
P. D. Gorman,
J. M. Duffy,
M. S. Ferreira,
S. R. Power
Abstract:
The growing interest in carbon-based spintronics has stimulated a number of recent theoretical studies on the RKKY interaction in graphene, with the aim of determining the most energetically favourable alignments between embedded magnetic moments. The RKKY interaction in undoped graphene decays faster than expected for conventional two-dimensional materials and recent studies suggest that the adso…
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The growing interest in carbon-based spintronics has stimulated a number of recent theoretical studies on the RKKY interaction in graphene, with the aim of determining the most energetically favourable alignments between embedded magnetic moments. The RKKY interaction in undoped graphene decays faster than expected for conventional two-dimensional materials and recent studies suggest that the adsorption configurations favoured by many transition-metal impurities may lead to even shorter ranged decays and possible sign-changing oscillations. Here we show that these features emerge in a mathematically transparent manner when the symmetry of the configurations is included in the calculation. Furthermore, we show that by breaking the symmetry of the graphene lattice, via uniaxial strain, the decay rate, and hence the range, of the RKKY interaction can be significantly altered. Our results suggest that magnetic interactions between adsorbed impurities in graphene can be manipulated by careful strain engineering of such systems.
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Submitted 4 July, 2013;
originally announced July 2013.
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Indirect Exchange and Ruderman-Kittel-Kasuya-Yosida (RKKY) Interactions in Magnetically-Doped Graphene
Authors:
Stephen R. Power,
Mauro S. Ferreira
Abstract:
Magnetically-doped graphene systems are potential candidates for application in future spintronic devices. A key step is to understand the pairwise interactions between magnetic impurities embedded in graphene that are mediated by the graphene conduction electrons. A large number of studies have been undertaken to investigate the indirect exchange, or RKKY, interactions in graphene. Many of these…
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Magnetically-doped graphene systems are potential candidates for application in future spintronic devices. A key step is to understand the pairwise interactions between magnetic impurities embedded in graphene that are mediated by the graphene conduction electrons. A large number of studies have been undertaken to investigate the indirect exchange, or RKKY, interactions in graphene. Many of these studies report a decay rate faster than expected for a 2-dimensional material and the absence of the usual distance dependent oscillations. In this review we summarize the techniques used to calculate the interaction and present the key results obtained to date. The effects of more detailed parameterisations of the magnetic impurities and graphene host are considered, as are results obtained from ab initio calculations. Since the fast decay of the interaction presents an obstacle to spintronic applications, we focus in particular on the possibility of augmenting the interaction range by a number of methods including doping, spin precession and the application of strain.
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Submitted 1 February, 2013; v1 submitted 9 January, 2013;
originally announced January 2013.
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Strain-induced modulation of magnetic interactions in graphene
Authors:
S. R. Power,
P. D. Gorman,
J. M. Duffy,
M. S. Ferreira
Abstract:
The ease with which the physical properties of graphene can be tuned suggests a wide range of possible applications. Recently, strain engineering of these properties has been of particular interest. Possible spintronic applications of magnetically doped graphene systems have motivated recent theoretical investigations of the so-called Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between locali…
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The ease with which the physical properties of graphene can be tuned suggests a wide range of possible applications. Recently, strain engineering of these properties has been of particular interest. Possible spintronic applications of magnetically doped graphene systems have motivated recent theoretical investigations of the so-called Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between localized moments in graphene. In this work a combination of analytic and numerical techniques are used to examine the effects of uniaxial strain on such an interaction. A range of interesting features are uncovered depending on the separation and strain directions. Amplification, suppression, and oscillatory behavior are reported as a function of the strain and mathematically transparent expressions predicting these features are derived. Since a wide range of effects, including overall moment formation and magnetotransport response, are underpinned by such interactions we predict that the ability to manipulate the coupling by applying strain may lead to interesting spintronic applications.
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Submitted 20 November, 2012; v1 submitted 12 July, 2012;
originally announced July 2012.
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Dynamic RKKY interaction in graphene
Authors:
S. R. Power,
F. S. M. Guimaraes,
A. T. Costa,
R. B. Muniz,
M. S. Ferreira
Abstract:
The growing interest in carbon-based spintronics has stimulated a number of recent theoretical studies on the RKKY interaction in graphene, based on which the energetically favourable alignment between magnetic moments embedded in this material can be calculated. The general consensus is that the strength of the RKKY interaction in graphene decays as 1/D3 or faster, where D is the separation betwe…
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The growing interest in carbon-based spintronics has stimulated a number of recent theoretical studies on the RKKY interaction in graphene, based on which the energetically favourable alignment between magnetic moments embedded in this material can be calculated. The general consensus is that the strength of the RKKY interaction in graphene decays as 1/D3 or faster, where D is the separation between magnetic moments. Such an unusually fast decay for a 2-dimensional system suggests that the RKKY interaction may be too short ranged to be experimentally observed in graphene. Here we show in a mathematically transparent form that a far more long ranged interaction arises when the magnetic moments are taken out of their equilibrium positions and set in motion. We not only show that this dynamic version of the RKKY interaction in graphene decays far more slowly but also propose how it can be observed with currently available experimental methods.
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Submitted 21 February, 2012; v1 submitted 1 December, 2011;
originally announced December 2011.
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Magnetization profile for impurities in graphene nanoribbons
Authors:
S. R. Power,
V. M. de Menezes,
S. B. Fagan,
M. S. Ferreira
Abstract:
The magnetic properties of graphene-related materials and in particular the spin-polarised edge states predicted for pristine graphene nanoribbons (GNRs) with certain edge geometries have received much attention recently due to a range of possible technological applications. However, the magnetic properties of pristine GNRs are not predicted to be particularly robust in the presence of edge disord…
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The magnetic properties of graphene-related materials and in particular the spin-polarised edge states predicted for pristine graphene nanoribbons (GNRs) with certain edge geometries have received much attention recently due to a range of possible technological applications. However, the magnetic properties of pristine GNRs are not predicted to be particularly robust in the presence of edge disorder. In this work, we examine the magnetic properties of GNRs doped with transition-metal atoms using a combination of mean-field Hubbard and Density Functional Theory techniques. The effect of impurity location on the magnetic moment of such dopants in GNRs is investigated for the two principal GNR edge geometries - armchair and zigzag. Moment profiles are calculated across the width of the ribbon for both substitutional and adsorbed impurities and regular features are observed for zigzag-edged GNRs in particular. Unlike the case of edge-state induced magnetisation, the moments of magnetic impurities embedded in GNRs are found to be particularly stable in the presence of edge disorder. Our results suggest that the magnetic properties of transition-metal doped GNRs are far more robust than those with moments arising intrinsically due to edge geometry.
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Submitted 31 August, 2011;
originally announced August 2011.
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Electronic structure of graphene beyond the linear dispersion regime
Authors:
S. R. Power,
M. S. Ferreira
Abstract:
Among the many interesting features displayed by graphene, one of the most attractive is the simplicity with which its electronic structure can be described. The study of its physical properties is significantly simplified by the linear dispersion relation of electrons in a narrow range around the Fermi level. Unfortunately, the mathematical simplicity of graphene electrons is only limited to this…
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Among the many interesting features displayed by graphene, one of the most attractive is the simplicity with which its electronic structure can be described. The study of its physical properties is significantly simplified by the linear dispersion relation of electrons in a narrow range around the Fermi level. Unfortunately, the mathematical simplicity of graphene electrons is only limited to this narrow energy region and is useless when dealing with problems that involve energies outside the linear dispersion part of the spectrum. In this letter we remedy this limitation by deriving a set of closed-form analytical expressions for the real-space single-electron Green function of graphene which are valid across an enormous fraction of the energy spectrum. By extending to a wider energy range the simplicity with which graphene electrons are described, it is now possible to derive more mathematically transparent and insightful expressions for a number of physical properties that involve higher energy scales. The power of this new formalism is illustrated in the case of the magnetic (RKKY) interaction in graphene.
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Submitted 15 November, 2012; v1 submitted 5 October, 2010;
originally announced October 2010.
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Impurity segregation in graphene nanoribbons
Authors:
S. R. Power,
V. M. de Menezes,
S. B. Fagan,
M. S. Ferreira
Abstract:
The electronic properties of low-dimensional materials can be engineered by doping, but in the case of graphene nanoribbons (GNR) the proximity of two symmetry-breaking edges introduces an additional dependence on the location of an impurity across the width of the ribbon. This introduces energetically favorable locations for impurities, leading to a degree of spatial segregation in the impurity…
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The electronic properties of low-dimensional materials can be engineered by doping, but in the case of graphene nanoribbons (GNR) the proximity of two symmetry-breaking edges introduces an additional dependence on the location of an impurity across the width of the ribbon. This introduces energetically favorable locations for impurities, leading to a degree of spatial segregation in the impurity concentration. We develop a simple model to calculate the change in energy of a GNR system with an arbitrary impurity as that impurity is moved across the ribbon and validate its findings by comparison with ab initio calculations. Although our results agree with previous works predicting the dominance of edge disorder in GNR, we argue that the distribution of adsorbed impurities across a ribbon may be controllable by external factors, namely an applied electric field. We propose that this control over impurity segregation may allow manipulation and fine-tuning of the magnetic and transport properties of GNRs.
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Submitted 23 November, 2009; v1 submitted 8 September, 2009;
originally announced September 2009.
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Emergence of local magnetic moments in doped graphene-related materials
Authors:
P. Venezuela,
R. B. Muniz,
A. T. Costa,
D. M. Edwards,
S. R. Power,
M. S. Ferreira
Abstract:
Motivated by recent studies reporting the formation of localized magnetic moments in doped graphene, we investigate the energetic cost for spin polarizing isolated impurities embedded in this material. When a well-known criterion for the formation of local magnetic moments in metals is applied to graphene we are able to predict the existence of magnetic moments in cases that are in clear contras…
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Motivated by recent studies reporting the formation of localized magnetic moments in doped graphene, we investigate the energetic cost for spin polarizing isolated impurities embedded in this material. When a well-known criterion for the formation of local magnetic moments in metals is applied to graphene we are able to predict the existence of magnetic moments in cases that are in clear contrast to previously reported Density Functional Theory (DFT) results. When generalized to periodically repeated impurities, a geometry so commonly used in most DFT-calculations, this criterion shows that the energy balance involved in such calculations contains unavoidable contributions from the long-ranged pairwise magnetic interactions between all impurities. This proves the fundamental inadequacy of the DFT-assumption of independent unit cells in the case of magnetically doped low-dimensional graphene-based materials. We show that this can be circumvented if more than one impurity per unit cell is considered, in which case the DFT results agree perfectly well with the criterion-based predictions for the onset of localized magnetic moments in graphene. Furthermore, the existence of such a criterion determining whether or not a magnetic moment is likely to arise within graphene will be instrumental for predicting the ideal materials for future carbon-based spintronic applications.
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Submitted 31 August, 2009;
originally announced August 2009.