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Twisted Nanotubes of Transition Metal Dichalcogenides with Split Optical Modes for Tunable Radiated Light Resonators
Authors:
Ilya A. Eliseyev,
Bogdan R. Borodin,
Dmitrii R. Kazanov,
Alexander V. Poshakinskiy,
Maja Remškar,
Sergey I. Pavlov,
Lyubov V. Kotova,
Prokhor A. Alekseev,
Alexey V. Platonov,
Valery Yu. Davydov,
Tatiana V. Shubina
Abstract:
Synthesized micro- and nanotubes composed of transition metal dichalcogenides (TMDCs) such as MoS$_2$ are promising for many applications in nanophotonics, because they combine the abilities to emit strong exciton luminescence and to act as whispering gallery microcavities even at room temperature. In addition to tubes in the form of hollow cylinders, there is an insufficiently-studied class of tw…
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Synthesized micro- and nanotubes composed of transition metal dichalcogenides (TMDCs) such as MoS$_2$ are promising for many applications in nanophotonics, because they combine the abilities to emit strong exciton luminescence and to act as whispering gallery microcavities even at room temperature. In addition to tubes in the form of hollow cylinders, there is an insufficiently-studied class of twisted tubes, the flattened cross section of which rotates along the tube axis. As shown by theoretical analysis, in such nanotubes the interaction of electromagnetic waves excited at opposite sides of the cross section can cause splitting of the whispering gallery modes. By studying micro-photoluminescence spectra measured along individual MoS$_2$ tubes, it has been established that the splitting value, which controls the energies of the split modes, depends exponentially on the aspect ratio of the cross section, which varies in "breathing" tubes, while the relative intensity of the modes in a pair is determined by the angle of rotation of the cross section. These results open up the possibility of creating multifunctional tubular TMDC nanodevices that provide resonant amplification of self-emitting light at adjustable frequencies.
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Submitted 9 December, 2022;
originally announced December 2022.
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Strong photoluminescence enhancement in indirect bandgap MoSe$_2$ nanophotonic resonator
Authors:
Bogdan R. Borodin,
Fedor A. Benimetskiy,
Valery Yu. Davydov,
Ilya A. Eliseyev,
Alexander N. Smirnov,
Dmitry A. Pidgayko,
Sergey I. Lepeshov,
Andrey A. Bogdanov,
Prokhor A. Alekseev
Abstract:
Transition metal dichalcogenides (TMDs) is a promising platform for new generation optoelectronics and nanophotonics due to their unique optical properties. However, in contrast to direct bandgap TMDs monolayers, bulk samples have an indirect bandgap that restricts their application as light emitters. On the other hand, the high refractive index of these materials seems ideal for creating high-qua…
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Transition metal dichalcogenides (TMDs) is a promising platform for new generation optoelectronics and nanophotonics due to their unique optical properties. However, in contrast to direct bandgap TMDs monolayers, bulk samples have an indirect bandgap that restricts their application as light emitters. On the other hand, the high refractive index of these materials seems ideal for creating high-quality nanophotonic resonators with a strong Purcell effect. In this work, we fabricate Whispering-gallery mode (WGM) resonators from bulk (i.e., indirect bandgap) MoSe$_2$ using resistless scanning probe lithography and study their optical properties. Micro-photoluminescence($μ$-PL) investigation revealed WGM spectra of resonators with an enhancement factor of 100 compared to pristine flake. Scattering experiments and modeling also confirm the WGM nature of spectra observed. Temperature dependence of PL revealed two components of photoluminescence. The first one quenches with decreasing temperature, the second one does not and becomes dominant. Therefore, this suggests that resonators amplify both direct and temperature-activated indirect PL. Thus, here we demonstrated the novel approach to fabricating nanophotonic resonators from bulk TMDs and obtaining PL from indirect bandgap materials. We believe that the suggested approach and structures have great prospects in nanophotonics.
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Submitted 4 September, 2022; v1 submitted 29 May, 2022;
originally announced May 2022.
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Effect of Nd and Rh substitution on the spin dynamics of Kondo insulator CeFe2Al10
Authors:
P. A. Alekseev,
J. -M. Mignot,
D. T. Adroja,
V. N. Lazukov,
H. Tanida,
Y. Muro,
M. Sera,
T. Takabatake,
P. Steffens,
S. Rols
Abstract:
The dynamic magnetic properties of the Kondo-insulator state in CeFe2Al10 (spin gap, resonance mode) have been investigated using polarized neutrons on a single crystal of pure CeFe2Al10. The results indicate that the magnetic excitations are polarized mainly along the orthorhombic a axis and their dispersion along the orthorhombic c direction could be determined. Polycrystalline samples of Nd- an…
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The dynamic magnetic properties of the Kondo-insulator state in CeFe2Al10 (spin gap, resonance mode) have been investigated using polarized neutrons on a single crystal of pure CeFe2Al10. The results indicate that the magnetic excitations are polarized mainly along the orthorhombic a axis and their dispersion along the orthorhombic c direction could be determined. Polycrystalline samples of Nd- and Rh-doped CeFe2Al0 were also studied by the time-of-flight technique, with the aim of finding out how the low-energy magnetic excitation spectra change upon isoelectronic substitution of the rare-earth (Nd) on the magnetic Ce site or electron doping (Rh) on the transition-element Fe sublattice. The introduction of magnetic Nd impurities strongly modifies the spin gap in the Ce dynamic magnetic response and causes the appearance of a quasielastic signal. The crystal-field excitations of Nd, studied in both LaFe2Al10 and CeFe2Al10, also reveal a significant influence of f-electron hybridization (largest in the case of Ce) on the crystal-field potential. As a function of the Rh concentration, a gradual change is observed from a Kondo-insulator to a metallic Kondo-lattice response, likely reflecting the decrease in the hybridization energy.
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Submitted 18 September, 2020; v1 submitted 6 April, 2020;
originally announced April 2020.
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Ab initio study of lattice dynamics of dodecaborides ZrB12 and LuB12
Authors:
N. M. Chtchelkatchev,
M. V. Magnitskaya,
E. S. Clementyev,
P. A. Alekseev
Abstract:
We performed ab initio lattice-dynamics calculations of frame-cluster dodecaborides ZrB12 and LuB12. As a whole, our calculated phonon frequencies and atom-projected density of states are consistent with the results of available first-principles calculations and experimental measurements. So we conclude that the ab initio DFT approach is quite appropriate to study the sufficiently subtle physics o…
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We performed ab initio lattice-dynamics calculations of frame-cluster dodecaborides ZrB12 and LuB12. As a whole, our calculated phonon frequencies and atom-projected density of states are consistent with the results of available first-principles calculations and experimental measurements. So we conclude that the ab initio DFT approach is quite appropriate to study the sufficiently subtle physics of these compounds. Our experiment-independent calculations provide an explicit quantitative confirmation of mixing the eigenvectors of boron and metal vibrations, which was previously observed in experiments.
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Submitted 20 October, 2019;
originally announced October 2019.
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Measurement of local optomechanical properties of a direct bandgap 2D semiconductor
Authors:
F. Benimetskiy,
V. Sharov,
P. A. Alekseev,
V. Kravtsov,
K. Agapev,
I. Sinev,
I. Mukhin,
A. Catanzaro,
R. Polozkov,
A. Tartakovskii,
A. Samusev,
M. S. Skolnick,
D. N. Krizhanovskii,
I. A. Shelykh,
I. Iorsh
Abstract:
Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMD) -- direct bandgap semiconductors with strong excitonic response. Here, we demonstrate an approach for local characterization of strain-induced modification of excitonic photoluminescence in TMD-based materials. We reversibly stress a monolayer of MoSe…
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Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMD) -- direct bandgap semiconductors with strong excitonic response. Here, we demonstrate an approach for local characterization of strain-induced modification of excitonic photoluminescence in TMD-based materials. We reversibly stress a monolayer of MoSe$_2$ with an AFM tip and perform spatio-spectral mapping of the excitonic photoluminescence in the vicinity of the indentation point. To fully reproduce the experimental data, we introduce the linear dependence of the exciton energy and corresponding photoluminescence intensity on the induced strain. Careful account for the optical resolution allows extracting these quantities with good agreement with the previous measurements, which involved macroscopic sample deformation. Our approach is a powerful tool for the study of local optomechanical properties of 2D direct bandgap semiconductors with strong excitonic response.
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Submitted 30 May, 2019;
originally announced May 2019.
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Unified mechanism of the surface Fermi level pinning in III-As nanowires
Authors:
P. A. Alekseev,
M. S. Dunaevskiy,
G. E. Cirlin,
R. R. Reznik,
A. N. Smirnov,
V. Yu. Davydov,
V. L. Berkovits
Abstract:
Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary Al$_{x}$Ga$_{1-x}$As (0$\le$x$\le$0.45) and Ga$_{x}$In$_{1-x}$As (0$\le$x$\le$1) alloys is pinned at the same position of 4.8$\pm$0.1 eV with regard to the vacuum level.…
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Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary Al$_{x}$Ga$_{1-x}$As (0$\le$x$\le$0.45) and Ga$_{x}$In$_{1-x}$As (0$\le$x$\le$1) alloys is pinned at the same position of 4.8$\pm$0.1 eV with regard to the vacuum level. The finding implies a unified mechanism of the Fermi level pinning for such surfaces. Further investigation, performed by Raman scattering and photoluminescence spectroscopy, shows that photooxidation of the Al$_{x}$Ga$_{1-x}$As and Ga$_{x}$In$_{1-x}$As nanowires leads to the accumulation of an excess arsenic on their crystal surfaces which is accompanied by a strong decrease of the band-edge photoluminescence intensity. We conclude that the surface excess arsenic in crystalline or amorphous forms is responsible for the Fermi level pinning at oxidized (110) surfaces of III-As nanowires.
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Submitted 17 November, 2017; v1 submitted 17 October, 2017;
originally announced October 2017.
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Screened moments in a Kondo insulator
Authors:
Wesley T. Fuhrman,
Juan R. Chamorro,
Pavel A. Alekseev,
Jean-Michel Mignot,
Thomas Keller,
Predrag Nikolic,
Tyrel M. McQueen,
Collin L. Broholm
Abstract:
Long known to have thermodynamic properties at odds with its insulating electrical transport, SmB6 has been the subject of great debate as it is unclear whether its unusual properties are related to the bulk or novel metallic surface states. We have observed a bulk moment-screening effect in nominally pure and Gd-doped SmB6 via heat capacity, magnetization, and resistivity measurements, and show t…
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Long known to have thermodynamic properties at odds with its insulating electrical transport, SmB6 has been the subject of great debate as it is unclear whether its unusual properties are related to the bulk or novel metallic surface states. We have observed a bulk moment-screening effect in nominally pure and Gd-doped SmB6 via heat capacity, magnetization, and resistivity measurements, and show this new Kondo-impurity like effect provides an unexpected but intuitive explanation for metal-like phenomena stemming from the strongly interacting host system. This affords a coherent understanding for decades of mysteries in strongly-correlated insulators, reveals the expanded utility of techniques previously only utilized for metals, and presents the novel effect of even highly-dilute impurities in strongly correlated insulators.
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Submitted 12 July, 2017;
originally announced July 2017.
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Observing visible-range photoluminescence in GaAs nanowires modified by laser irradiation
Authors:
P. A. Alekseev,
M. S. Dunaevskiy,
D. A. Kirilenko,
A. N. Smirnov,
V. Yu. Davydov,
V. L. Berkovits
Abstract:
We study structural and chemical transformations induced by focused laser beam in GaAs nanowires with axial zinc-blende/wurtzite (ZB/WZ) heterostucture. The experiments are performed using a combination of transmission electron microscopy, energy-dispersive X-ray spectroscopy, Raman scattering, and photoluminescence spectroscopy. For the both components of heterostructure, laser irradiation under…
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We study structural and chemical transformations induced by focused laser beam in GaAs nanowires with axial zinc-blende/wurtzite (ZB/WZ) heterostucture. The experiments are performed using a combination of transmission electron microscopy, energy-dispersive X-ray spectroscopy, Raman scattering, and photoluminescence spectroscopy. For the both components of heterostructure, laser irradiation under atmospheric air is found to produce a double surface layer which is composed of crystalline arsenic and of amorphous GaO$_{x}$. The latter compound is responsible for appearance of a peak at 1.76 eV in photoluminescence spectra of GaAs nanowires. Under increased laser power density, due to sample heating, evaporation of the surface crystalline arsenic and formation of $β$-Ga$_{2}$O$_{3}$ nanocrystals proceed on surface of the zinc-blende part of nanowire. The formed nanocrystals reveal a photoluminescence band in visible range of 1.7-2.4 eV. At the same power density for wurtzite part of the nanowire, total amorphization with formation of $β$-Ga$_{2}$O$_{3}$ nanocrystals occurs. Observed transformation of WZ-GaAs to $β$-Ga$_{2}$O$_{3}$ nanocrystals presents an available way for creation of axial and radial heterostuctures ZB-GaAs/$β$-Ga$_{2}$O$_{3}$ for optoelectronic and photonic applications.
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Submitted 17 January, 2017;
originally announced January 2017.
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Europium mixed-valence, long-range magnetic order, and dynamic magnetic response in EuCu$_{2}$(Si$_{x}$Ge$_{1-x}$)$_{2}$
Authors:
Kirill S. Nemkovski,
Denis P. Kozlenko,
Pavel A. Alekseev,
Jean-Michel Mignot,
Alexey P. Menushenkov,
Alexander A. Yaroslavtsev,
Evgeny S. Clementyev,
Alexandre S. Ivanov,
Stéphane Rols,
Benedikt Klobes,
Raphaël P. Hermann,
Alexander V. Gribanov
Abstract:
In mixed-valence or heavy-fermion systems, the hybridization between local $f$ orbitals and conduction band states can cause the suppression of long-range magnetic order, which competes with strong spin fluctuations. Ce- and Yb-based systems have been found to exhibit fascinating physical properties (heavy-fermion superconductivity, non-Fermi-liquid states, etc.) when tuned to the vicinity of magn…
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In mixed-valence or heavy-fermion systems, the hybridization between local $f$ orbitals and conduction band states can cause the suppression of long-range magnetic order, which competes with strong spin fluctuations. Ce- and Yb-based systems have been found to exhibit fascinating physical properties (heavy-fermion superconductivity, non-Fermi-liquid states, etc.) when tuned to the vicinity of magnetic quantum critical points by use of various external control parameters (temperature, magnetic field, chemical composition). Recently, similar effects (mixed-valence, Kondo fluctuations, heavy Fermi liquid) have been reported to exist in some Eu-based compounds. Unlike Ce (Yb), Eu has a multiple electron (hole) occupancy of its $4f$ shell, and the magnetic Eu$^{2+}$ state ($4f^7$) has no orbital component in the usual $LS$ coupling scheme, which can lead to a quite different and interesting physics. In the EuCu$_{2}$(Si$_{x}$Ge$_{1-x}$)$_{2}$ series, where the valence can be tuned by varying the Si/Ge ratio, it has been reported that a significant valence fluctuation can exist even in the magnetic order regime. This paper presents a detailed study of the latter material using different microscopic probes (XANES, Mössbauer spectroscopy, elastic and inelastic neutron scattering), in which the composition dependence of the magnetic order and dynamics across the series is traced back to the change in the Eu valence state. In particular, the results support the persistence of valence fluctuations into the antiferromagnetic state over a sizable composition range below the critical Si concentration $x_c \approx 0.65$. The sequence of magnetic ground states in the series is shown to reflect the evolution of the magnetic spectral response.
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Submitted 4 November, 2016; v1 submitted 16 August, 2016;
originally announced August 2016.
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First evidence for a Sm$^{3+}$-type contribution to the magnetic form factor in the quasielastic spectral response of intermediate valence SmB$_{6}$
Authors:
P. A. Alekseev,
J. -M. Mignot,
P. S. Savchenkov,
V. Lazukov
Abstract:
The momentum transfer dependence of the magnetic form factor associated with the quasielastic spectral component in the dynamic magnetic response of intermediate valence SmB$_{6}$ has been measured using inelastic neutron scattering on a double-isotope ($^{154}$Sm, $^{11}$B) single crystal. The experimental dependence differs qualitatively from those obtained earlier for the inelastic signals, as…
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The momentum transfer dependence of the magnetic form factor associated with the quasielastic spectral component in the dynamic magnetic response of intermediate valence SmB$_{6}$ has been measured using inelastic neutron scattering on a double-isotope ($^{154}$Sm, $^{11}$B) single crystal. The experimental dependence differs qualitatively from those obtained earlier for the inelastic signals, as well as from the field-induced magnetic form factor of SmB$_{6}$ obtained by polarized neutron diffraction. This observation is interpreted by specifically considering the Curie-type contributions to the dynamic susceptibility, which arise from the mixing of 4f$^{5}$ and 4f$^{6}$ J-multiplets into the intermediate valence state wave function.
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Submitted 22 April, 2016;
originally announced April 2016.
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Interaction Driven Subgap Spin Exciton in the Kondo Insulator SmB6
Authors:
W. T. Fuhrman,
J. Leiner,
P. Nikolić,
G. E. Granroth,
M. B. Stone,
M. D. Lumsden,
L. DeBeer-Schmitt,
P. A. Alekseev,
J. -M. Mignot,
S. M. Koohpayeh,
P. Cottingham,
W. Adam Phelan,
L. Schoop,
T. M. McQueen,
C. Broholm
Abstract:
Using inelastic neutron scattering, we map a 14 meV coherent resonant mode in the topological Kondo insulator SmB6 and describe its relation to the low energy insulating band structure. The resonant intensity is confined to the X and R high symmetry points, repeating outside the first Brillouin zone and dispersing less than 2 meV, with a 5d-like magnetic form factor. We present a slave-boson treat…
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Using inelastic neutron scattering, we map a 14 meV coherent resonant mode in the topological Kondo insulator SmB6 and describe its relation to the low energy insulating band structure. The resonant intensity is confined to the X and R high symmetry points, repeating outside the first Brillouin zone and dispersing less than 2 meV, with a 5d-like magnetic form factor. We present a slave-boson treatment of the Anderson Hamiltonian with a third neighbor dominated hybridized band structure. This approach produces a spin exciton below the charge gap with features that are consistent with the observed neutron scattering. We find that maxima in the wave vector dependence of the inelastic neutron scattering indicate band inversion.
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Submitted 30 January, 2015; v1 submitted 9 July, 2014;
originally announced July 2014.
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Dispersive magnetic resonance mode in the Kondo semiconductor CeFe2Al10
Authors:
Jean-Michel Mignot,
Pavel A. Alekseev,
Julien Robert,
Sylvain Petit,
Takashi Nishioka,
Masahiro Matsumura,
Riki Kobayashi,
Hiroshi Tanida,
Hiroki Nohara,
Masafumi Sera
Abstract:
The CeT2Al10 family of orthorhombic compounds exhibits a very peculiar evolution from a Kondo-insulator (T: Fe) to an unconventional long-range magnetic order (T: Ru, Os). Inelastic neutron scattering experiments performed on single-crystal CeFe2Al10 reveal that this material develops a spin-gap in its magnetic spectral response below ~ 50 K, with a magnetic excitation dispersing from…
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The CeT2Al10 family of orthorhombic compounds exhibits a very peculiar evolution from a Kondo-insulator (T: Fe) to an unconventional long-range magnetic order (T: Ru, Os). Inelastic neutron scattering experiments performed on single-crystal CeFe2Al10 reveal that this material develops a spin-gap in its magnetic spectral response below ~ 50 K, with a magnetic excitation dispersing from $E = 10.2 \pm 0.5$ meV at the Y zone-boundary point [q = (0,1,0)] to $\approx 12$ meV at the top of the branch. The excitation shows a pronounced polarization of the magnetic fluctuations along a, the easy anisotropy axis. Its behavior is contrasted with that of the (magnonlike) modes previously reported for CeRu2Al10, which have transverse character and exist only in the antiferromagnetic state. The present observation is ascribed to a "magnetic exciton" mechanism invoked to explain a similar magnetic response previously discovered in YbB12.
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Submitted 13 January, 2014;
originally announced January 2014.
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Magnetic spectral response and lattice properties in mixed-valence Sm1-x Yx S solid solutions studied with x-ray diffraction, x-ray absorption spectroscopy, and inelastic neutron scattering
Authors:
P. A. Alekseev,
J. -M. Mignot,
E. V. Nefeodova,
K. S. Nemkovski,
V. N. Lazukov,
N. N. Tiden,
A. P. Menushenkov,
R. V. Chernikov,
K. V. Klementiev,
A. Ochiai,
A. V. Golubkov,
R. I. Bewley,
A. V. Rybina,
I. P. Sadikov
Abstract:
Mixed-valence phenomena occurring in the "black" (B) and "gold" (G) phases of Sm1-x Yx S have been studied by x-ray diffraction, x-ray absorption spectroscopy, and inelastic neutron scattering. Lattice-constant and phonon-dispersion results confirm that the valence instability occurs already inside the B phase. On the other hand, pronounced temperature anomalies in the thermal expansion α(T), as…
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Mixed-valence phenomena occurring in the "black" (B) and "gold" (G) phases of Sm1-x Yx S have been studied by x-ray diffraction, x-ray absorption spectroscopy, and inelastic neutron scattering. Lattice-constant and phonon-dispersion results confirm that the valence instability occurs already inside the B phase. On the other hand, pronounced temperature anomalies in the thermal expansion α(T), as well as in the Sm mean-square displacements denote the onset of the B-G transition for the compositions x = 0.33 and 0.45. It is argued that these anomalies primarily denote an effect of electron-phonon coupling. The magnetic spectral response, measured on both powder and single crystals, is dominated by the Sm2+ spin-orbit component close to 36 meV. A strongly overdamped Sm3+ contribution appears only for x >= 0.33 near room-temperature. The quasielastic signal is strongly suppressed below 70 K, reflecting the formation of the singlet mixed-valence ground state. Quite remarkably, the signal around 36 meV is found, from the single-crystal spectra, to arise from two distinct, dispersive, interacting branches. The lower peak, confirmed to exist from x = 0.17 to x = 0.33 at least, is tentatively ascribed to an excitation specific to the mixed-valence regime, reminiscent of the "exciton" peak reported previously for SmB6 .
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Submitted 31 May, 2006;
originally announced June 2006.
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Evidence for short-range antiferromagnetic fluctuations in Kondo-insulating YbB12
Authors:
J. -M. Mignot,
P. A. Alekseev,
K. S. Nemkovski,
L. -P. Regnault,
F. Iga,
T. Takabatake
Abstract:
The spin dynamics of mixed-valence YbB12 has been studied by inelastic neutron scattering on a high-quality single crystal. In the Kondo-insulating regime realized at low temperature, the spectra exhibit a spin-gap structure with two sharp, dispersive, in-gap excitations at E = 14.5 and approximately 20 meV. The lower mode is shown to be associated with short-range correlations near the antiferr…
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The spin dynamics of mixed-valence YbB12 has been studied by inelastic neutron scattering on a high-quality single crystal. In the Kondo-insulating regime realized at low temperature, the spectra exhibit a spin-gap structure with two sharp, dispersive, in-gap excitations at E = 14.5 and approximately 20 meV. The lower mode is shown to be associated with short-range correlations near the antiferromagnetic wave vector q0 = (1/2, 1/2, 1/2). Its properties are in overall agreement with those expected for a "spin exciton'' branch in an indirect hybridization gap semiconductor.
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Submitted 7 March, 2005;
originally announced March 2005.
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Yb-Yb correlations and crystal-field effects in the Kondo insulator YbB12 and its solid solutions
Authors:
P. A. Alekseev,
J. -M. Mignot,
K. S. Nemkovski,
E. V. Nefeodova,
N. Yu. Shitsevalova,
Yu. B. Paderno,
R. I. Bewley,
R. S. Eccleston,
E. S. Clementyev,
V. N. Lazukov,
I. P. Sadikov,
N. N. Tiden
Abstract:
We have studied the effect of Lu substitution on the spin dynamics of the Kondo insulator YbB12 to clarify the origin of the spin-gap response previously observed at low temperature in this material. Inelastic neutron spectra have been measured in Yb1-xLuxB12 compounds for four Lu concentrations x = 0, 0.25, 0.90 and 1.0. The data indicate that the disruption of coherence on the Yb sublattice pr…
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We have studied the effect of Lu substitution on the spin dynamics of the Kondo insulator YbB12 to clarify the origin of the spin-gap response previously observed at low temperature in this material. Inelastic neutron spectra have been measured in Yb1-xLuxB12 compounds for four Lu concentrations x = 0, 0.25, 0.90 and 1.0. The data indicate that the disruption of coherence on the Yb sublattice primarily affects the narrow peak structure occurring near 15-20 meV in pure YbB12, whereas the spin gap and the broad magnetic signal around 38 meV remain almost unaffected. It is inferred that the latter features reflect mainly local, single-site processes, and may be reminiscent of the inelastic magnetic response reported for mixed-valence intermetallic compounds. On the other hand, the lower component at 15 meV is most likely due to dynamic short-range magnetic correlations. The crystal-field splitting in YbB12 estimated from the Er3+ transitions measured in a Yb0.9Er0.1B12 sample, has the same order of magnitude as other relevant energy scales of the system and is thus likely to play a role in the form of the magnetic spectral response.
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Submitted 8 March, 2004; v1 submitted 17 October, 2003;
originally announced October 2003.
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Collective magnetic excitations in mixed-valence Sm0.83Y0.17S
Authors:
P. A. Alekseev,
J. -M. Mignot,
A. Ochiai,
E. V. Nefeodova,
I. P. Sadikov,
E. S. Clementyev,
V. N. Lazukov,
M. Braden,
K. S. Nemkovski
Abstract:
The magnetic spectral response of black-phase mixed-valence Sm0.83Y0.17S has been measured by inelastic neutron scattering on a single crystal. Two magnetic peaks are observed in the energy range of the Sm2+ spin-orbit transition (25-40 meV). Both of them exhibit significant dispersion along the three main symmetry directions, reminiscent of the spin-orbit exciton branch found in pure divalent S…
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The magnetic spectral response of black-phase mixed-valence Sm0.83Y0.17S has been measured by inelastic neutron scattering on a single crystal. Two magnetic peaks are observed in the energy range of the Sm2+ spin-orbit transition (25-40 meV). Both of them exhibit significant dispersion along the three main symmetry directions, reminiscent of the spin-orbit exciton branch found in pure divalent SmS. The results can be reproduced by a simple phenomenological model accounting for the existence of sizeable Sm-Sm exchange interactions, and a microscopic mechanism is proposed on the basis of the "local-bound-state" theory developed previously for SmB6.
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Submitted 18 December, 2001;
originally announced December 2001.
