Showing 1–43 of 43 results for author: Monroy, E

Polarization spontaneous and piezo: fundamentals and their implementation in ab initio calculations

Authors: Pawel Strak, Pawel Kempisty, Konrad Sakowski, Jacek Piechota, Izabella Grzegory, Eva Monroy, Agata Kaminska, Stanislaw Krukowski

Abstract: Fundamental properties of spontaneous and piezo polarization are reformulated and critically reviewed. It was demonstrated that Landau definition of polarization as a dipole density could be used to the infinite systems. The difference between the bulk polarization and surface polarity are distinguished thus creating clear identification of both components. The local model of spontaneous polarizat… ▽ More Fundamental properties of spontaneous and piezo polarization are reformulated and critically reviewed. It was demonstrated that Landau definition of polarization as a dipole density could be used to the infinite systems. The difference between the bulk polarization and surface polarity are distinguished thus creating clear identification of both components. The local model of spontaneous polarization was created and used to calculate spontaneous polarization as the electric dipole density. It was shown that the proposed local model correctly predicts c-axis spontaneous polarization values of the nitride wurtzite semiconductors. It was also shown that the proposed model predicts zero polarization in the plane perpendicular to the c-axis, in accordance with symmetry requirements. In addition, the model results are in accordance with polarization equal to zero for zinc blende lattice. These data confirm the basic correctness of the proposed model. The spontaneous polarization values obtained for all wurtzite III nitrides (BN, AlN, GaN and InN) are in basic agreement with the earlier calculations using Berry phase and slab models of Bernardini et al. {Bernardini et al. Phys Rev B 56 (2001) R10024 & 63 (2001) 193201} but not with Dreyer et al. {Dreyer et al. Phys. Rev X 6 (2016) 021038}. Wurtzite nitride superlattices ab initio calculations were performed to derive polarization-induced fields in the coherently strained lattices showing good agreement with the polarization values. The strained superlattice data were used to determine the piezoelectric parameters of wurtzite nitrides obtaining the values that were in basic agreement with the earlier data. Zinc blende superlattices were also modeled using ab initio calculations showing results that are in agreement with the absence of polarization of all nitrides in zinc blende symmetry. △ Less

Submitted 1 July, 2024; originally announced July 2024.

Comments: 36 pages, 13 figures, 53 references

AlN Nanowire Based Vertically Integrated Piezoelectric Nanogenerators

Authors: N. Buatip, T. Auzelle, P. John, S. Rauwerdink, M. Sohdi, M. Saluan, B. Fernandez, E. Monroy, D. Mornex, C. R. Bowen, R. Songmuang

Abstract: In this study, detailed analysis of the direct piezo-response of AlN nanowire-based vertically integrated nanogenerators (VINGs) is undertaken as a function of mechanical excitation frequency. We show that the piezo-charge, piezo-voltage, and impedance measured at the same position of the devices can be directly correlated through an equivalent circuit model, in the whole frequency range of invest… ▽ More In this study, detailed analysis of the direct piezo-response of AlN nanowire-based vertically integrated nanogenerators (VINGs) is undertaken as a function of mechanical excitation frequency. We show that the piezo-charge, piezo-voltage, and impedance measured at the same position of the devices can be directly correlated through an equivalent circuit model, in the whole frequency range of investigation. Our presented results are utilized to determine the performance figures of merit (FoM) of nanowire-based VINGs, namely the piezoelectric voltage constant (g) for sensing, and the product d g for energy harvesting, where d is the piezoelectric charge constant. By comparison of these metrics with those of freestanding single crystal GaN and quartz substrates, as well as sputtered AlN thin films, we suggest that the nanowires can outperform their rigid counterparts in terms of mechanical sensing and energy generation. This work provides experimental guidelines for understanding the direct piezo-characteristics of VINGs and facilitates a quantitative comparison between nanostructured piezoelectric devices fabricated using different materials or architectures. △ Less

Submitted 1 June, 2024; v1 submitted 15 February, 2024; originally announced February 2024.

Coulomb contribution to Shockley-Read-Hall (SRH) recombination

Authors: Konrad Sakowski, Pawel Strak, Pawel Kempisty, Jacek Piechota, Izabella Grzegory, Piotr Perlin, Eva Monroy, Agata Kaminska, Stanislaw Krukowski

Abstract: Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates.… ▽ More Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that in the typical semiconductor device or semiconductor medium, the SRH recombination cannot be neglected at low temperatures. The SRH is more effective in the case of low doped semiconductors. Effective screening by mobile carrier density could reduce the effect, leading to SRH rate increase. △ Less

Submitted 26 January, 2024; v1 submitted 18 October, 2023; originally announced October 2023.

Comments: 14 pages, 3 figures

Effect of extended defects on AlGaN QDs for electron-pumped UV-emitters

Authors: Jesus Cañas, Névine Rochat, Adeline Grenier, Audrey Jannaud, Zineb Saghi, Jean-Luc Rouviere, Edith Bellet-Amalric, Anjali Harikumar, Catherine Bougerol, Lorenzo Rigutti, Eva Monroy

Abstract: We study the origin of bimodal emission in AlGaN/AlN QD superlattices displaying high internal quantum efficiency (around 50%) in the 230-300 nm spectral range. The secondary emission at longer wavelengths is linked to the presence of cone-like defects starting at the first AlN buffer/superlattice interface and propagating vertically. These defects are associated with a dislocation that produces s… ▽ More We study the origin of bimodal emission in AlGaN/AlN QD superlattices displaying high internal quantum efficiency (around 50%) in the 230-300 nm spectral range. The secondary emission at longer wavelengths is linked to the presence of cone-like defects starting at the first AlN buffer/superlattice interface and propagating vertically. These defects are associated with a dislocation that produces strong shear strain, which favors the formation of 30° faceted pits. The cone-like structures present Ga enrichment at the boundary facets and larger QDs within the defect. The bimodality is attributed to the differing dot size/composition within the defects and at the defect boundaries, which is confirmed by the correlation of microscopy results and Schrödinger-Poisson calculations. △ Less

Submitted 6 October, 2023; originally announced October 2023.

Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture

Authors: E. Akar, I. Dimkou, A. Ajay, Martien I. den Hertog, E. Monroy

Abstract: The interest in nanowire photodetectors stems from their potential to improve the performance of a variety of devices, including solar cells, cameras, sensors, and communication systems. Implementing devices based on nanowire ensembles requires a planarization process which must be conceived to preserve the advantages of the nanowire geometry. This is particularly challenging in the ultraviolet (U… ▽ More The interest in nanowire photodetectors stems from their potential to improve the performance of a variety of devices, including solar cells, cameras, sensors, and communication systems. Implementing devices based on nanowire ensembles requires a planarization process which must be conceived to preserve the advantages of the nanowire geometry. This is particularly challenging in the ultraviolet (UV) range, where spin coating with hydrogen silsesquioxane (HSQ) appears as an interesting approach in terms of transmittance and refractive index. Here, we report a comprehensive study on UV photodetectors based on GaN or AlGaN/AlN nanowire ensembles encapsulated in HSQ. We show that this material is efficient for passivating the nanowire surface, it introduces a compressive strain in the nanowires and preserves their radiative efficiency. We discuss the final performance of planarized UV photodetectors based on three kinds of nanowire ensembles: (i) non-intentionally-doped (nid) GaN nanowires, (ii) Ge-doped GaN nanowires, and (iii) nid GaN nanowires terminated with an AlGaN/AlN superlattice. The incorporation of the superlattice allows tuning the spectral response with bias, which can enhance the carrier collection from the AlGaN/AlN superlattice or from the GaN stem. In all the cases, the performance of the planarized devices remains determined by the nanowire nature, since their characteristics in terms of linearity and spectral selectivity are closer to those demonstrated in single nanowires than those of planar devices. Thus, the visible rejection is several orders of magnitude and there is no indication of persistent photocurrent, which makes all the samples suitable for UV-selective photodetection applications. △ Less

Submitted 8 June, 2023; originally announced June 2023.

Journal ref: ACS Appl. Nano Mater. 2023

AlGaN/AlN Stranski-Krastanov quantum dots for highly efficient electron beam pumped emitters: The role of miniaturization and composition to attain far UV-C emission

Authors: Jesus Cañas, Anjali Harikumar, Stephen T. Purcell, Nevine Rochat, Adeline Grenier, Audrey Jannaud, Edith Bellet-Amalric, Fabrice Donatini, Eva Monroy

Abstract: Conventional ultraviolet (UV) lamps for disinfection emit radiation in the 255-270 nm range, which poses a high risk of causing cancer and cataracts. To address these concerns, solid-state far UV-C sources emitting below 240 nm are gaining attention as a safe and sustainable disinfection solution for occupied spaces. Here, we delve into the extension of the AlxGa1-xN/AlN quantum dot (QD) technolog… ▽ More Conventional ultraviolet (UV) lamps for disinfection emit radiation in the 255-270 nm range, which poses a high risk of causing cancer and cataracts. To address these concerns, solid-state far UV-C sources emitting below 240 nm are gaining attention as a safe and sustainable disinfection solution for occupied spaces. Here, we delve into the extension of the AlxGa1-xN/AlN quantum dot (QD) technology towards the far UV-C range, which presents various challenges associated with the reduction of the lattice mismatch and band offset when Al is incorporated in the QDs. We explore the structural and optical impact of increasing the Al content through the increase of the Al flux and eventual correction of the Ga flux to maintain a constant metal/N ratio. We also examine the impact of extreme miniaturization of the QDs, achieved through a reduction of their growth time, on the spectral behavior and internal quantum efficiency (IQE). The high Al content results in QDs with a reduced aspect ratio (height/diameter) and thicker wetting layer when compared to the GaN/AlN system. Self-assembled QDs grown with a metal/N ratio ranging from 0.5 to 0.8 show an IQE around 50%, independent of the Al content (up to 65%) or emission wavelength (300-230 nm). However, samples emitting at wavelengths below 270 nm exhibit a bimodal luminescence associated with inhomogeneous in-plane emission attributed to fluctuations of the QD shape associated with extended defects. Reducing the QD size exacerbates the bimodality without reducing the emission wavelength. The power efficiencies under electron beam pumping range from 0.4% to 1%, with clear potential for improvement through surface treatments that enhance light extraction efficiency. △ Less

Submitted 25 May, 2023; originally announced May 2023.

Comments: 31 pages, 7 figures, 4 tables

Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM

Authors: Bruno C. da Silva, Zahra S. Momtaz, Eva Monroy, Hanako Okuno, Jean-Luc Rouviere, David Cooper, Martien I. den-Hertog

Abstract: A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up the possibility of studying the electrostatic properties of a p-n junction with nm-scale spatial resolution. The complete description of a p-n junction must tak… ▽ More A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron microscopy and off-axis electron holography have opened up the possibility of studying the electrostatic properties of a p-n junction with nm-scale spatial resolution. The complete description of a p-n junction must take into account the precise evolution of the concentration of dopants around the junction, since the sharpness of the dopant transition directly influences the built-in potential and the maximum electric field. Here, a contacted silicon p-n junction is studied through in-situ biased 4D-STEM. Measurements of electric field, built-in voltage, depletion region width and charge density in the space charge region are combined with analytical equations as well as finite-element simulations in order to evaluate the quality of the junction interface. The nominally-symmetric, highly doped ($N_A = N_D = 9\space x \space10^{18} cm^{-3}$) junction presents an electric field and built-in voltage much lower than expected for an abrupt junction. These experimental results are consistent with electron holography data. All measured junction parameters are compatible with the presence of an intermediate region with a graded profile of the dopants at the p-n interface. This hypothesis is also consistent with the evolution of the electric field with bias. These results demonstrate that in-situ biased 4D-STEM enables a better understanding of the electrical properties of semiconductor p-n junctions with nm-scale resolution. △ Less

Submitted 20 September, 2022; originally announced September 2022.

Comments: 13 pages, 5 figures

Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets

Authors: Sergi Cuesta, Lou Denaix, Florian Castioni, Le Si Dang, Eva Monroy

Abstract: We report a two-step process to obtain smooth and vertical {10-10} m-plane facets in AlGaN/GaN separate confinement heterostructures designed to fabricate UV lasers emitting at 355 nm. The process consists in a dry etching by RIE-ICP combined with a crystallographic-selective wet etching process using a KOH-based solution. The anisotropy in the wet etching rates between the different crystallograp… ▽ More We report a two-step process to obtain smooth and vertical {10-10} m-plane facets in AlGaN/GaN separate confinement heterostructures designed to fabricate UV lasers emitting at 355 nm. The process consists in a dry etching by RIE-ICP combined with a crystallographic-selective wet etching process using a KOH-based solution. The anisotropy in the wet etching rates between the different crystallographic planes of the AlGaN structure, allows the fabrication of flat and parallel facets without a degradation of the multilayered ensemble. The optical performance of the lasers display a major improved when using the two-step process for the definition of the cavity, in comparison to cavities fabricated by mechanical cleaving, with the lasing threshold under optical pumping being reduced to almost half. △ Less

Submitted 30 March, 2022; originally announced March 2022.

Comments: 20 pages, 5 figures

Comparison of the material quality of AlxIn1-xN (x ~ 0-0.50) films deposited on Si (100) and (111) by reactive RF sputtering

Authors: M. Sun, R. Blasco, M. de la Mata, S. I. Molina, A. Ajay, E. Monroy, S. Valdueza-Felip, F. B. Naranjo

Abstract: Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To modulate their Al content, the Al RF power was varied from 0 to 225 W, whereas the In RF power and deposition temperature were fixed at 30 W and 300oC, respectively. X-ray diffraction measurements reveal a c-axis-oriented w… ▽ More Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To modulate their Al content, the Al RF power was varied from 0 to 225 W, whereas the In RF power and deposition temperature were fixed at 30 W and 300oC, respectively. X-ray diffraction measurements reveal a c-axis-oriented wurtzite structure with no phase separation regardless of the Al content (x = 0-0.50), which increases with the Al power supply. The surface morphology of the AlxIn1-xN layers improves with increasing Al content and it is similar for samples grown on both Si substrates (the root-mean-square roughness decreases from 12 nm to 2.5 nm). Furthermore, from TEM images we notice a similar grain-like columnar morphology and defect density on samples deposited on both Si substrates under the same conditions. Simultaneously grown AlxIn1-xN-on-sapphire samples point to a residual n-type carrier concentration in the 1020-1021 cm-3 range. The optical band gap energy of these layers evolves from 1.75 eV to 2.56 eV with increasing Al content, consistent with the blue shift of their low-temperature photoluminescence. In general, the material quality of the AlxIn1-xN films on Si is similar for both crystallographic orientations. Nonetheless, samples deposited on sapphire show an improved structural and morphological characteristic likely due to the lower difference in lattice constants between the nitride and the sapphire substrate. △ Less

Submitted 23 December, 2021; originally announced December 2021.

Decorrelation of internal quantum efficiency and lasing threshold in AlGaN-based separate confinement heterostructures for UV emission

Authors: Sergi Cuesta, Lou Denaix, Le Si Dang, Eva Monroy

Abstract: In this paper, we study the internal quantum efficiency and lasing threshold of AlGaN/GaN separate confinement heterostructures designed for ultraviolet laser emission. We discuss the effect of carrier localization and carrier diffusion on the optical performance. The implementation of graded index separate confinement heterostructures results in an improved carrier collection at the multi-quantum… ▽ More In this paper, we study the internal quantum efficiency and lasing threshold of AlGaN/GaN separate confinement heterostructures designed for ultraviolet laser emission. We discuss the effect of carrier localization and carrier diffusion on the optical performance. The implementation of graded index separate confinement heterostructures results in an improved carrier collection at the multi-quantum well, which facilitates population inversion and reduces the lasing threshold. However, this improvement is not correlated with the internal quantum efficiency of the spontaneous emission. We show that carrier localization at alloy inhomogeneities results in an enhancement of the radiative efficiency but does not reduce the laser threshold, more sensitive to the carrier injection efficiency. △ Less

Submitted 22 September, 2021; originally announced September 2021.

Optical net gain measurement on Al$_{0.07}$Ga$_{0.93}$N/GaN multi-quantum well

Authors: Quang Minh Thai, Sergi Cuesta, Lou Denaix, Sylvain Hermelin, Olivier Boisron, Stephen T. Purcell, Le Si Dang, Eva Monroy

Abstract: We present net gain measurements at room temperature in Al$_{0.07}$Ga$_{0.93}$N/GaN 10-period multi-quantum well emitting at 367 nm, using the variable stripe length method. Measurements were conducted at two different positions on the sample, where the net gain threshold was attained at 218 kW/cm$^{2}$ and 403 kW/cm$^{2}$. At the position with higher threshold, we observed an anomalous amplificat… ▽ More We present net gain measurements at room temperature in Al$_{0.07}$Ga$_{0.93}$N/GaN 10-period multi-quantum well emitting at 367 nm, using the variable stripe length method. Measurements were conducted at two different positions on the sample, where the net gain threshold was attained at 218 kW/cm$^{2}$ and 403 kW/cm$^{2}$. At the position with higher threshold, we observed an anomalous amplification of the photoluminescence intensity that occurs for long stripe lengths (superior to 400 $μみゅー$m) and high pumping power (superior to 550 kW/cm$^{2}$), leading to an overestimation of the gain value. We attribute such a phenomenon to the feedback provided by the reflection from cracks, which were created during the epitaxial growth due to the strong lattice mismatch between different layers. The highest gain value without anomalous amplification was 131 cm$^{-1}$, obtained at the maximum pumping power density of the experimental setup (743 kW/cm$^{2}$). Using the intrinsic efficiency limit of the cathodoluminescence process, we estimate a lower limit for electron beam pumped laser threshold at room temperature of 390 kW/cm$^{2}$ for this multi-quantum well structure. △ Less

Submitted 4 August, 2021; v1 submitted 1 August, 2021; originally announced August 2021.

Comments: 9 pages, 7 figures, 1 table

A Photonic Atom Probe Analysis of the Effect of Extended and Point Defects on the Luminescence of InGaN/GaN Quantum Dots

Authors: I. Dimkou, J. Houard, N. Rochat, P. Dalapati, E. Di Russo, D. Cooper, A. Grenier, E. Monroy, L. Rigutti

Abstract: We report a correlative microscopy study of a sample containing three stacks of InGaN/GaN quantum dots (QDs) grown at different substrate temperature, each stack consisting of 3 layers of QDs. Decreasing the substrate temperature along the growth axis leads to the proliferation of structural defects. However, the luminescence intensity increases towards the surface, in spite of the higher density… ▽ More We report a correlative microscopy study of a sample containing three stacks of InGaN/GaN quantum dots (QDs) grown at different substrate temperature, each stack consisting of 3 layers of QDs. Decreasing the substrate temperature along the growth axis leads to the proliferation of structural defects. However, the luminescence intensity increases towards the surface, in spite of the higher density of threading dislocations, revealing that the QD layers closer to the substrate behave as traps for non-radiative point defects. During atom probe tomography experiments combined with in-situ micro-photoluminescence, it was possible to isolate the optical emission of a single QD located in the topmost QD stack, closer to the sample surface. The single QD emission line displayed a spectral shift during the experiment confirming the relaxation of elastic strain due to material evaporation during atom probe tomography. △ Less

Submitted 7 June, 2021; originally announced June 2021.

Comments: 21 pages, 5 figures

Polarization doping ab initio verification of the concept charge conservation and nonlocality

Authors: Ashfaq Ahmad, Pawel Strak, Pawel Kempisty, Konrad Sakowski, Jacek Piechota, Yoshihiro Kangawa, Izabella Grzegory, Michal Leszczynski, Zbigniew R. Zytkiewicz, Grzegorz Muziol, Eva Monroy, Stanislaw Krukowski, Agata Kaminska

Abstract: In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allo… ▽ More In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation law applies for fixed and mobile charges separately, leading to nonlocal compensation phenomena involving bulk fixed and mobile charge and polarization sheet charge at the heterointerfaces. The magnitude of the effect allows obtaining technically viable mobile charge density for optoelectronic devices without impurity doping (donors or acceptors). Therefore, it provides an additional tool for the device designer, with the potential to attain high conductivities: high carrier concentrations can be obtained even in materials with high dopant ionization energies, and the mobility is not limited by scattering at ionized impurities. △ Less

Submitted 22 March, 2022; v1 submitted 2 June, 2021; originally announced June 2021.

Comments: 16 pages, 4 figures

AlGaN/GaN asymmetric graded-index separate confinement heterostructures designed for electron-beam pumped UV lasers

Authors: Sergi Cuesta, Yoann Curé, Fabrice Donatini, Lou Denaix, Edith Bellet-Amalric, Catherine Bougerol, Vincent Grenier, Quang-Minh Thai, Gilles Nogues, Stephen T. Purcell, Le Si Dang, Eva Monroy

Abstract: We present a study of undoped AlGaN/GaN separate confinement heterostructures designed to operate as electron beam pumped ultraviolet lasers. We discuss the effect of spontaneous and piezoelectric polarization on carrier diffusion, comparing the results of cathodoluminescence with electronic simulations of the band structure and Monte Carlo calculations of the electron trajectories. Carrier collec… ▽ More We present a study of undoped AlGaN/GaN separate confinement heterostructures designed to operate as electron beam pumped ultraviolet lasers. We discuss the effect of spontaneous and piezoelectric polarization on carrier diffusion, comparing the results of cathodoluminescence with electronic simulations of the band structure and Monte Carlo calculations of the electron trajectories. Carrier collection is significantly improved using an asymmetric graded-index separate confinement heterostructure (GRINSCH). The graded layers avoid potential barriers induced by polarization differences in the heterostructure and serve as strain transition buffers which reduce the mosaicity of the active region and the linewidth of spontaneous emission. △ Less

Submitted 16 March, 2021; v1 submitted 6 January, 2021; originally announced January 2021.

Solubility limit of Ge Dopants in AlGaN: a Chemical and Microstructural Investigation down to the Nanoscale

Authors: C. Bougerol, E. Robin, E. Di Russo, E. Bellet-Amalric, V. Grenier, A. Ajay, L. Rigutti, E. Monroy

Abstract: Attaining low resistivity AlGaN layers is the keystone to improve the efficiency of light emitting devices in the ultraviolet spectral range. Here, we present a microstructural analysis of Ge-doped AlGaN samples with Al mole fraction from x=0 to 1, and nominal doping level in the range of 1E20 cm-3, together with the measurement of Ge concentration and its spatial distribution down to the nm scale… ▽ More Attaining low resistivity AlGaN layers is the keystone to improve the efficiency of light emitting devices in the ultraviolet spectral range. Here, we present a microstructural analysis of Ge-doped AlGaN samples with Al mole fraction from x=0 to 1, and nominal doping level in the range of 1E20 cm-3, together with the measurement of Ge concentration and its spatial distribution down to the nm scale. AlGaN:Ge samples with x smaller or equal to 0.2 do not present any sign of inhomogeneity. However, samples with x > 0.4 display micrometer-size Ge crystallites at the surface. Ge segregation is not restricted to the surface: Ge-rich regions with a size of tens of nanometers are observed inside the AlGaN:Ge layers, generally associated with Ga-rich regions around structural defects. With this local exceptions, the AlGaN:Ge matrix present an homogenous Ge composition which can be significantly lower than the nominal doping level. Precise measurements of Ge in the matrix provide a view of the solubility diagram of Ge in AlGaN as a function of the Al mole fraction. The solubility of Ge in AlN is extremely low. Between AlN and GaN, the solubility increases linearly with the Ga mole fraction in the ternary alloy, which suggests that the Ge incorporation takes place by substitution of Ga atoms only. The maximum percentage of Ga sites occupied by Ge saturates around 1%. The solubility issues and Ge segregation phenomena at different length scales likely play a role in the efficiency of Ge as n-type AlGaN dopant, even at Al concentrations where Ge DX centers are not expected to manifest. Therefore, this information can have direct impact in the performance of Ge-doped AlGaN light emitting diodes, particularly in the spectral range for disinfection (around 260 nm), which requires heavily-doped alloys with high Al mole fraction. △ Less

Submitted 26 October, 2020; originally announced October 2020.

Journal ref: ACS Appl. Mater. Interfaces 2021, 13, 4165-4173

Internal quantum efficiency of AlGaN/AlN quantum dot superlattices for electron-pumped ultraviolet sources

Authors: A. Harikumar, F. Donatini, C. Bougerol, E. Bellet-Amalric, Q. -M. Thai, C. Dujardin, I. Dimkou, S. T. Purcell, E. Monroy

Abstract: In this paper, we describe the growth and characterization of 530-nm-thick superlattices (100 periods) of AlxGa1-xN/AlN (x = 0, 0.1) Stranski-Krastanov quantum dots for application as the active region of electron-beam pumped ultraviolet lamps. Highly dense (>10e11 cm-2) quantum dot layers are deposited by molecular beam epitaxy, and we explore the effect of the III/V ratio during the growth proce… ▽ More In this paper, we describe the growth and characterization of 530-nm-thick superlattices (100 periods) of AlxGa1-xN/AlN (x = 0, 0.1) Stranski-Krastanov quantum dots for application as the active region of electron-beam pumped ultraviolet lamps. Highly dense (>10e11 cm-2) quantum dot layers are deposited by molecular beam epitaxy, and we explore the effect of the III/V ratio during the growth process on their optical performance. The study considers structures emitting in the 244-335 nm range at room temperature, with a relative linewidth in the 6-11% range, mainly due to the QD diameter dispersion inherent in self-assembled growth. Under electron pumping, the emission efficiency remains constant for acceleration voltages below 9 kV. The correlation of this threshold with the total thickness of the superlattice and the penetration depth of the electron beam confirms the homogeneity of the nanostructures along the growth axis. Below the threshold, the emission intensity scales linearly with the injected current. The internal quantum efficiency is characterized at low injection, which reveals the material properties in terms of non-radiative processes, and high injection, which emulates carrier injection in operation conditions. In quantum dots synthesized with III/V ratio < 0.75, the internal quantum efficiency remains around 50% from low injection to pumping power densities as high as 200 kW/cm2, being the first kind of nanostructures that present such stable behaviour. △ Less

Submitted 29 May, 2020; originally announced May 2020.

Journal ref: Nanotechnology 31(50), 505205 (2020)

Correlated electro-optical and structural study of electrically tunable nanowire quantum dot emitters

Authors: Maria Spies, Akhil Ajay, Eva Monroy, Bruno Gayral, M. den Hertog

Abstract: Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-optical behaviour of such quantum objects without correlated studies of the structural and optical properties on the same nanowire. In this work, we study the spectral tunability of the emission of a single quantum dot in… ▽ More Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-optical behaviour of such quantum objects without correlated studies of the structural and optical properties on the same nanowire. In this work, we study the spectral tunability of the emission of a single quantum dot in a GaN nanowire by applying external bias. The nanowires are dispersed and contacted on electron beam transparent Si3N4 membranes, so that transmission electron microscopy observations, photocurrent and micro-photoluminescence measurements under bias can be performed on the same specimen. The emission from a single dot blue or red shifts when the external electric field compensates or enhances the internal electric field generated by the spontaneous and piezoelectric polarization. A detailed study of two nanowire specimens emitting at 327.5 nm and 307.5 nm shows spectral shifts at rates of 20 and 12 meV/V, respectively. Theoretical calculations facilitated by the modelling of the △ Less

Submitted 6 February, 2020; originally announced February 2020.

Correlated and in-situ electrical transmission electron microscopy studies and related membrane fabrication

Authors: Maria Spies, Zahra Sadre-Momtaz, Jonas Lähnemann, Minh Anh Luong, Bruno Fernandez, Thierry Fournier, Eva Monroy, Martien I. den Hertog

Abstract: Understanding the interplay between the structure, composition and opto-electronic properties of semiconductor nano-objects requires combining transmission electron microscopy (TEM) based techniques with electrical and optical measurements on the very same specimen. Recent developments in TEM technologies allow not only the identification and in-situ electrical characterization of a particular obj… ▽ More Understanding the interplay between the structure, composition and opto-electronic properties of semiconductor nano-objects requires combining transmission electron microscopy (TEM) based techniques with electrical and optical measurements on the very same specimen. Recent developments in TEM technologies allow not only the identification and in-situ electrical characterization of a particular object, but also the direct visualization of its modification in-situ by techniques such as Joule heating. Over the past years, we have carried out a number of studies in these fields that are reviewed in this contribution. In particular, we discuss here i) correlated studies where the same unique object is characterized electro-optically and by TEM, ii) in-situ Joule heating studies where a solid-state metal-semiconductor reaction is monitored in the TEM, and iii) in-situ biasing studies to better understand the electrical properties of contacted single nanowires. In addition, we provide detailed fabrication steps for the silicon nitride membranes crucial to these correlated and in-situ measurements. △ Less

Submitted 2 December, 2021; v1 submitted 24 January, 2020; originally announced January 2020.

Comments: This is an author-created, un-copyedited version of a topical review published in Nanotechnology. IOP Publishing Ltd. is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6528/ab99f0

Journal ref: Nanotechnology 31, 472001 (2020)

Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources

Authors: I. Dimkou, A. Harikumar, F. Donatini, J. Lähnemann, M. I. den Hertog, C. Bougerol, E. Bellet-Amalric, N. Mollard, A. Ajay, G. Ledoux, S. T. Purcell, E. Monroy

Abstract: In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowires for application in electron-pumped ultraviolet sources. The optical performance of GaN/AlN superlattices on nanowires is compared with the emission of planar GaN/AlN superlattices with the same periodicity and thickne… ▽ More In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowires for application in electron-pumped ultraviolet sources. The optical performance of GaN/AlN superlattices on nanowires is compared with the emission of planar GaN/AlN superlattices with the same periodicity and thickness grown on bulk GaN substrates along the N-polar and metal-polar crystallographic axes. The nanowire samples are less sensitive to nonradiative recombination than planar layers, attaining internal quantum efficiencies (IQE) in excess of 60% at room temperature even under low injection conditions. The IQE remains stable for higher excitation power densities, up to 50 kW/cm2. We demonstrate that the nanowire superlattice is long enough to collect the electron-hole pairs generated by an electron beam with an acceleration voltage VA = 5 kV. At such VA, the light emitted from the nanowire ensemble does not show any sign of quenching under constant electron beam excitation (tested for an excitation power density around 8 kW/cm2 over the scale of minutes). Varying the dot/barrier thickness ratio and the Al content in the dots, the nanowire peak emission can be tuned in the range from 340 to 258 nm. Keywords: GaN, AlN, nanowire, ultraviolet △ Less

Submitted 29 November, 2019; originally announced November 2019.

Journal ref: Nanotechnology 31, 204001 (2020)

Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors

Authors: Maria Spies, Jakub Polaczyński, Akhil Ajay, Dipankar Kalita, Jonas Lähnemann, Bruno Gayral, Martien I. den Hertog, Eva Monroy

Abstract: Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumina… ▽ More Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current-voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold ($\approx$ 80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination. △ Less

Submitted 29 April, 2019; originally announced April 2019.

Comments: This is the accepted manuscript version of an article that appeared in Nanotechnology. The CC BY-NC-ND 3.0 license applies, see https://creativecommons.org/licences/by-nc-nd/3.0

Journal ref: Nanotechnology 29, 255204 (2018)

Nanowire photodetectors based on wurtzite semiconductor heterostructures

Authors: Maria Spies, Eva Monroy

Abstract: Using nanowires for photodetection constitutes an opportunity to enhance the absorption efficiency while reducing the electrical cross-section of the device. They present interesting features like compatibility with silicon substrates, which offers the possibility of integrating detector and readout circuitry, and facilitates their transfer to flexible substrates. Within a nanowire, it is possible… ▽ More Using nanowires for photodetection constitutes an opportunity to enhance the absorption efficiency while reducing the electrical cross-section of the device. They present interesting features like compatibility with silicon substrates, which offers the possibility of integrating detector and readout circuitry, and facilitates their transfer to flexible substrates. Within a nanowire, it is possible to implement axial and radial (core-shell) heterostructures. These two types can be combined to obtain three-dimensional carrier confinement (dot-in-a-wire). The incorporation of heterostructures in nanowire photodetectors opens interesting opportunities of application and performance improvement. Heterojunctions or type-II heterostructures favor the separation of the photogenerated electrons and holes, and the implementation of quantum dots in a nanowire can be applied to the development of quantum photodetectors. This paper provides a general review of latest progresses in nanowire photodetectors, including single nanowires and heterostructured nanowires. △ Less

Submitted 27 April, 2019; originally announced April 2019.

Journal ref: Semicond. Sci. Technol. 34 053002 (2019)

Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures

Authors: Caroline B. Lim, Akhil Ajay, Jonas Lähnemann, Catherine Bougerol, Eva Monroy

Abstract: This paper assesses the effects of Ge-doping on the structural and optical (band-to-band and intersubband (ISB)) properties of GaN/AlGaN multi-quantum wells (QWs) designed to display ISB absorption in the short-wave, mid- and far-infrared ranges (SWIR, MIR, and FIR, respectively). The standard c-plane crystallographic orientation is considered for wells absorbing in the SWIR and MIR spectral regio… ▽ More This paper assesses the effects of Ge-doping on the structural and optical (band-to-band and intersubband (ISB)) properties of GaN/AlGaN multi-quantum wells (QWs) designed to display ISB absorption in the short-wave, mid- and far-infrared ranges (SWIR, MIR, and FIR, respectively). The standard c-plane crystallographic orientation is considered for wells absorbing in the SWIR and MIR spectral regions, whereas the FIR structures are grown along the nonpolar m-axis. In all cases, we compare the characteristics of Ge-doped and Si-doped samples with the same design and various doping levels. The use of Ge appears to improve the mosaicity of the highly lattice-mismatched GaN/AlN heterostructures. However, when reducing the lattice mismatch, the mosaicity is rather determined by the substrate and does not show any dependence on the dopant nature or concentration. From the optical point of view, by increasing the dopant density, we observe a blueshift of the photoluminescence in polar samples due to the screening of the internal electric field by free carriers. In the ISB absorption, on the other hand, there is a systematic improvement of the linewidth when using Ge as a dopant for high doping levels, whatever the spectral region under consideration (i.e. different QW size, barrier composition and crystallographic orientation). △ Less

Submitted 22 March, 2019; originally announced March 2019.

Comments: This is the accepted manuscript version of an article that appeared in Semiconductor Science and Technology. The CC BY-NC-ND 3.0 license applies, see https://creativecommons.org/licences/by-nc-nd/3.0

Journal ref: Semicond. Sci. Technol. 32, 125002 (2017)

On intrinsic Stokes shift in wide GaN/AlGaN polar quantum wells

Authors: M. Jarema, M. Gladysiewicz, E. Zdanowicz, E. Bellet-Amalric, E. Monroy, R. Kudrawiec

Abstract: The interpretation of electromodulated reflectance (ER) spectra of polar quantum wells (QWs) is difficult even for homogeneous structures because of the built-in electric field. In this work we compare the room-temperature contactless ER and photoluminescence (PL) spectra of polar GaN/AlGaN QWs with the effective-mass band structure calculations. We show that the emission from the ground state tra… ▽ More The interpretation of electromodulated reflectance (ER) spectra of polar quantum wells (QWs) is difficult even for homogeneous structures because of the built-in electric field. In this work we compare the room-temperature contactless ER and photoluminescence (PL) spectra of polar GaN/AlGaN QWs with the effective-mass band structure calculations. We show that the emission from the ground state transition is observed in PL but the ER is dominated by transitions between excited states. This effect results from the polarization-induced built-in electric field in QW that breaks the selection rules that apply to square-like QWs, allowing many optical transitions which cannot be separately distinguished in the ER spectrum. We develop the guidelines for the identification of optical transitions observed in PL and ER spectra. We conclude that an intrinsic Stokes shift, i.e., a shift between emission and absorption, is present even for homogeneous GaN/AlGaN QWs with large width, where the electron-hole wavefunction overlap for the fundamental transition is weak. △ Less

Submitted 11 March, 2019; originally announced March 2019.

Journal ref: Semicond. Sci. Technol. 34 075021 (2019)

Electrical and Optical Properties of Heavily Ge-Doped AlGaN

Authors: R. Blasco, A. Ajay, E. Robin, C. Bougerol, K. Lorentz, L. C. Alves, I. Mouton, L. Amichi, A. Grenier, E. Monroy

Abstract: We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford backscattering spectrometry, and the Ge concentration was increased up to [Ge] = 1E21 cm-3. Even at these high doping levels Ge does not induce any structural degra… ▽ More We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford backscattering spectrometry, and the Ge concentration was increased up to [Ge] = 1E21 cm-3. Even at these high doping levels Ge does not induce any structural degradation in AlxGa1-xN layers with x below 0.15. However, for higher Al compositions, clustering of Ge forming crystallites were observed. Hall effect measurements show a gradual decrease of the carrier concentration when increasing the Al mole fraction, which is already noticeable in samples with x = 0.24. Samples with x = 0.64-0.66 remain conductive, but the donor activation rate drops to around 0.1% (carrier concentration around 1E18 cm-3 for [Ge] = 1E21 cm-3). From the optical point of view, the low temperature photoluminescence is dominated by the band-to-band emission, which show only spectral shift and broadening associated to the Burstein-Moss effect. The evolution of the photoluminescence peak position with temperature shows that the free carriers due to Ge doping can efficiently screen the potential fluctuations induced by alloy disorder. △ Less

Submitted 13 December, 2018; v1 submitted 25 October, 2018; originally announced October 2018.

Journal ref: R Blasco et al 2019 J. Phys. D: Appl. Phys. 52 125101

Improvement of the critical temperature of NbTiN films on III-nitride substrates

Authors: Houssaine Machhadani, Julien Zichi, Catherine Bougerol, Stéphane Lequien, Jean-Luc Thomassin, Nicolas Mollard, Anna Mukhtarova, Val Zwiller, Jean-Michel Gérard, Eva Monroy

Abstract: In this paper, we study the impact of using III-nitride semiconductors (GaN, AlN) as substrates for ultrathin (11 nm) superconducting films of NbTiN deposited by reactive magnetron sputtering. The resulting NbTiN layers are (111)-oriented, fully relaxed, and they keep an epitaxial relation with the substrate. The higher critical superconducting temperature (Tc = 11.8 K) was obtained on AlN-on-sapp… ▽ More In this paper, we study the impact of using III-nitride semiconductors (GaN, AlN) as substrates for ultrathin (11 nm) superconducting films of NbTiN deposited by reactive magnetron sputtering. The resulting NbTiN layers are (111)-oriented, fully relaxed, and they keep an epitaxial relation with the substrate. The higher critical superconducting temperature (Tc = 11.8 K) was obtained on AlN-on-sapphire, which was the substrate with smaller lattice mismatch with NbTiN. We attribute this improvement to a reduction of the NbTiN roughness, which appears associated to the relaxation of the lattice misfit with the substrate. On AlN-on-sapphire, superconducting nanowire single photon detectors (SNSPDs) were fabricated and tested, obtaining external quantum efficiencies that are in excellent agreement with theoretical calculations. △ Less

Submitted 5 December, 2018; v1 submitted 9 October, 2018; originally announced October 2018.

Journal ref: Supercond. Sci. Technol. 32 (2019) 035008

Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micropillars

Authors: Jonas Lähnemann, David A. Browne, Akhil Ajay, Mathieu Jeannin, Angela Vasanelli, Jean-Luc Thomassin, Edith Bellet-Amalric, Eva Monroy

Abstract: We present a systematic study of top-down processed GaN/AlN heterostructures for intersubband optoelectronic applications. Samples containing quantum well superlattices that display either near- or mid-infrared intersubband absorption were etched into nano- and micropillar arrays in an inductively coupled plasma. We investigate the influence of this process on the structure and strain-state, on th… ▽ More We present a systematic study of top-down processed GaN/AlN heterostructures for intersubband optoelectronic applications. Samples containing quantum well superlattices that display either near- or mid-infrared intersubband absorption were etched into nano- and micropillar arrays in an inductively coupled plasma. We investigate the influence of this process on the structure and strain-state, on the interband emission and on the intersubband absorption. Notably, for pillar spacings significantly smaller ($\leq1/3$) than the intersubband wavelength, the magnitude of the intersubband absorption is not reduced even when 90\% of the material is etched away and a similar linewidth is obtained. The same holds for the interband emission. In contrast, for pillar spacings on the order of the intersubband absorption wavelength, the intersubband absorption is masked by refraction effects and photonic crystal modes. The presented results are a first step towards micro- and nanostructured group-III nitride devices relying on intersubband transitions. △ Less

Submitted 23 October, 2018; v1 submitted 23 May, 2018; originally announced May 2018.

Journal ref: Nanotechnology 30 (5), 054002 (2019)

Bias-controlled spectral response in GaN/AlN single-nanowire ultraviolet photodetectors

Authors: Maria Spies, Martien I. Den Hertog, Pascal Hille, Jörg Schörmann, Jakub Polaczyński, Bruno Gayral, Martin Eickhoff, Eva Monroy, Jonas Lähnemann

Abstract: We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such a way that the application of positive or negative bias leads to an enhancement of the collection of photogenerated carriers from the GaN/AlN superlattice or from the GaN base, respectively, as confirmed by electron beam… ▽ More We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in such a way that the application of positive or negative bias leads to an enhancement of the collection of photogenerated carriers from the GaN/AlN superlattice or from the GaN base, respectively, as confirmed by electron beam-induced current measurements. The devices display enhanced response in the ultraviolet A ($\approx$ 330-360 nm) / B ($\approx$ 280-330 nm) spectral windows under positive/negative bias. The result is explained by correlation of the photocurrent measurements with scanning transmission electron microscopy observations of the same single nanowire, and semi-classical simulations of the strain and band structure in one and three dimensions. △ Less

Submitted 27 October, 2017; originally announced December 2017.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters (2017), copyright (C) American Chemical Society after peer review. To access the final edited and published work see http://doi.org/10.1021/acs.nanolett.7b01118

Journal ref: Nano Letters 17 (7), 4231-4239 (2017)

Near-infrared intersubband photodetection in GaN/AlN nanowires

Authors: Jonas Lähnemann, Akhil Ajay, Martien I. den Hertog, Eva Monroy

Abstract: Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $μみゅー$m wavelength window with picosecond response times. Incorporating nanowires as active media could enable an independent control over the electrical cross-section of the device and the optical absorption cross-s… ▽ More Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $μみゅー$m wavelength window with picosecond response times. Incorporating nanowires as active media could enable an independent control over the electrical cross-section of the device and the optical absorption cross-section. Furthermore, the three-dimensional carrier confinement in nanowire heterostructures opens new possibilities to tune the carrier relaxation time. However, the generation of structural defects and the surface sensitivity of GaAs nanowires have so far hindered the fabrication of nanowire intersubband devices. Here, we report the first demonstration of intersubband photodetection in a nanowire, using GaN nanowires containing a GaN/AlN superlattice absorbing at 1.55 $μみゅー$m. The combination of spectral photocurrent measurements with 8-band k$\cdot$p calculations of the electronic structure supports the interpretation of the result as intersubband photodetection in these extremely short-period superlattices. We observe a linear dependence of the photocurrent with the incident illumination power, which confirms the insensitivity of the intersubband process to surface states and highlights how architectures featuring large surface-to-volume ratios are suitable as intersubband photodetectors. Our analysis of the photocurrent characteristics points out routes for an improvement of the device performance. This first nanowire based intersubband photodetector represents a technological breakthrough that paves the way to a powerful device platform with potential for ultrafast, ultrasensitive photodetectors and highly-efficient quantum cascade emitters with improved thermal stability. △ Less

Submitted 17 January, 2019; v1 submitted 2 October, 2017; originally announced October 2017.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters (2017), copyright (C) American Chemical Society after peer review. To access the final edited and published work see http://dx.doi.org/10.1021/acs.nanolett.7b03414 , the supporting information is available (free of charge) under the same link

Journal ref: Nano Lett., 2017, 17 (11), pp 6954-6960

Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures

Authors: A. Ajay, C. B. Lim, D. A. Browne, J. Polaczynski, E. Bellet-Amalric, J. Bleuse, M. I. den Hertog, E. Monroy

Abstract: In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 microns. We compare the effect of doping the GaN sections with Si and Ge, and we discuss the variation of free-carrier screening with the doping density and well/nanodisk size. We obser… ▽ More In this paper, we study band-to-band and intersubband characteristics of GaN/AlN heterostructures (planar and nanowires) structurally designed to absorb in the short-wavelength infrared region, particularly at 1.55 microns. We compare the effect of doping the GaN sections with Si and Ge, and we discuss the variation of free-carrier screening with the doping density and well/nanodisk size. We observe that nanowire heterostructures consistently present longer photoluminescence decay times than their planar counterparts, which supports the existence of an in-plane piezoelectric field associated to the shear component of the strain tensor, leading to lateral electron-hole separation. We report intersubband absorption covering 1.45 microns to 1.75 microns using Ge-doped quantum wells, with comparable performance to well-studied Si-doped planar heterostructures. We also report comparable intersubband absorption in Si- and Ge-doped nanowire heterostructures indicating that the choice of dopant is not an intrinsic barrier for observing intersubband phenomena. In addition, we calculate the spectral shift of the intersubband absorption due to many body effects as a function of the doping concentration. △ Less

Submitted 8 August, 2017; v1 submitted 11 May, 2017; originally announced May 2017.

Journal ref: A. Ajay et al., Nanotechnology 28, 405204 (2017)

P-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

Authors: S. Valdueza-Felip, A. Ajay, L. Redaelli, M. P. Chauvat, P. Ruterana, T. Cremel, M. Jiménez-Rodríguez, K. Kheng, E. Monroy

Abstract: We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1-xN homojunctions (x = 0.10-0.40) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire substrates. Junctions terminated with p-InGaN present improved carrier extraction efficiency in comparison with devices capped with p-GaN, due to the deleterious effect of polarizatio… ▽ More We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1-xN homojunctions (x = 0.10-0.40) synthesized by plasma-assisted molecular-beam epitaxy on GaN-on-sapphire substrates. Junctions terminated with p-InGaN present improved carrier extraction efficiency in comparison with devices capped with p-GaN, due to the deleterious effect of polarization discontinuities on the device performance. We demonstrate that the presence of Mg does not perturb the In incorporation in InGaN, and it leads to a significant reduction of the stacking fault density. p-In0.3Ga0.7N layers with a hole concentration of 3.2x1018 cm-3 are demonstrated. InGaN homojunction devices show a peak EQE = 14+-2% in the blue-to-orange spectral region, and an extended cutoff to 600 nm. △ Less

Submitted 24 October, 2016; originally announced October 2016.

Design of polarization-insensitive superconducting single photon detectors with high-index dielectrics

Authors: Luca Redaelli, Val Zwiller, E. Monroy, J. M. Gérard

Abstract: In this paper, the design of superconducting-nanowire single-photon detectors which are insensitive to the polarization of the incident light is investigated. By using high-refractive-index dielectrics, the index mismatch between the nanowire and the surrounding media is reduced. This enhances the absorption of light with electric field vector perpendicular to the nanowire segments, which is gener… ▽ More In this paper, the design of superconducting-nanowire single-photon detectors which are insensitive to the polarization of the incident light is investigated. By using high-refractive-index dielectrics, the index mismatch between the nanowire and the surrounding media is reduced. This enhances the absorption of light with electric field vector perpendicular to the nanowire segments, which is generally hindered in this kind of detectors. Building on this principle and focusing on NbTiN nanowire devices, we present several easy-to-realize cavity architectures which allow high absorption efficiency (in excess of 90%) and polarization insensitivity simultaneously. Designs based on ultranarrow nanowires, for which the polarization sensitivity is much more marked, are also presented. Finally, we briefly discuss the specific advantages of this approach in the case of WSi or MoSi nanowires. △ Less

Submitted 5 July, 2016; originally announced July 2016.

UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices

Authors: Jonas Lähnemann, Martien Den Hertog, Pascal Hille, María de la Mata, Thierry Fournier, Jörg Schörmann, Jordi Arbiol, Martin Eickhoff, Eva Monroy

Abstract: We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. In the absence of a surface conduction channel, the incorporation of the heterostructure leads to a decrease of the dark cu… ▽ More We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. In the absence of a surface conduction channel, the incorporation of the heterostructure leads to a decrease of the dark current and an increase of the photosensitivity. A significant dispersion in the magnitude of dark currents for different single nanowires is attributed to the coalescence of nanowires with displaced nanodisks, reducing the effective length of the heterostructure. A larger number of active nanodisks and AlN barriers in the current path results in lower dark current and higher photosensitivity, and improves the sensitivity of the nanowire to variations in the illumination intensity (improved linearity). Additionally, we observe a persistence of the photocurrent, which is attributed to a change of the resistance of the overall structure, particularly the GaN stem and cap sections. In consequence, the time response is rather independent of the dark current. △ Less

Submitted 20 June, 2017; v1 submitted 27 April, 2016; originally announced April 2016.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters (2016), copyright (C) American Chemical Society after peer review. To access the final edited and published work see http://dx.doi.org/10.1021/acs.nanolett.6b00806

Journal ref: Nano Letters 16, 3260 (2016)

Ge doping of GaN beyond the Mott transition

Authors: A. Ajay, J. Schörmann, M. Jimenez-Rodriguez, C. B. Lim, F. Walther, M. Rohnke, I. Mouton, L. Amichi, C. Bougerol, M. I. Den Hertog, M. Eickhoff, E. Monroy

Abstract: We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular beam epitaxy, reaching carrier concentrations of up to 6.7E20 cm-3 at 300K, well beyond the Mott density. The Ge concentration and free carrier density were found to scale linearly with the Ge flux in the studied range. All the GaN:Ge layers present smooth surface morphology with atomic terrac… ▽ More We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-assisted molecular beam epitaxy, reaching carrier concentrations of up to 6.7E20 cm-3 at 300K, well beyond the Mott density. The Ge concentration and free carrier density were found to scale linearly with the Ge flux in the studied range. All the GaN:Ge layers present smooth surface morphology with atomic terraces, without trace of pits or cracks, and the mosaicity of the samples has no noticeable dependence on the Ge concentration. The variation of the GaN:Ge band gap with the carrier concentration is consistent with theoretical calculations of the band gap renormalization due to electron-electron and electron-ion interaction, and Burstein-Moss effect. △ Less

Submitted 8 July, 2016; v1 submitted 1 April, 2016; originally announced April 2016.

Journal ref: Journal of Physics D: Applied Physics 49, 445301 (2016)

Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

Authors: L. Redaelli, A. Mukhtarova, S. Valdueza-Felip, A. Ajay, C. Bougerol, C. Himwas, J. Faure-Vincent, C. Durand, J. Eymery, E. Monroy

Abstract: We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the well thickness from 1.3 to 5.4 nm, as demonstrated by cathodoluminescence measurements. However, the redshift of the absorption edge is much less pronou… ▽ More We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the well thickness from 1.3 to 5.4 nm, as demonstrated by cathodoluminescence measurements. However, the redshift of the absorption edge is much less pronounced in absorption: in thicker wells, transitions to higher energy levels dominate. Besides, partial strain relaxation in thicker wells leads to the formation of defects, hence degrading the overall solar cell performance. △ Less

Submitted 23 February, 2016; originally announced February 2016.

Comments: This is an author-created, un-copyedited version of an article accepted for publication in Applied Physics Letters. The Version of Record is available online at http://dx.doi.org/10.1063/1.4896679

Journal ref: Appl. Phys. Lett. 105, 131105 (2014)

Design of broadband high-efficiency superconducting-nanowire single photon detectors

Authors: Luca Redaelli, Gabriele Bulgarini, Sergiy Dobrovolskiy, Sander N. Dorenbos, Val Zwiller, Eva Monroy, Jean-Michel Gérard

Abstract: In this paper several designs to maximize the absorption efficiency of superconducting-nanowire single-photon detectors are investigated. Using a simple optical cavity consisting of a gold mirror and a SiO2 layer, the absorption efficiency can be boosted to over 97%: this result is confirmed experimentally by the realization of an NbTiN-based detector having an overall system detection efficiency… ▽ More In this paper several designs to maximize the absorption efficiency of superconducting-nanowire single-photon detectors are investigated. Using a simple optical cavity consisting of a gold mirror and a SiO2 layer, the absorption efficiency can be boosted to over 97%: this result is confirmed experimentally by the realization of an NbTiN-based detector having an overall system detection efficiency of 85% at 1.31 micrometers. Calculations show that by sandwiching the nanowire between two dielectric Bragg reflectors, unity absorption (> 99.9%) could be reached at the peak wavelength for optimized structures. To achieve broadband high efficiency, a different approach is considered: a waveguide-coupled detector. The calculations performed in this work show that, by correctly dimensioning the waveguide and the nanowire, polarization-insensitive detectors absorbing more than 95% of the injected photons over a wavelength range of several hundred nm can be designed. We propose a detector design making use of GaN/AlN waveguides, since these materials allow lattice-matched epitaxial deposition of Nb(Ti)N films and are transparent on a very wide wavelength range. △ Less

Submitted 22 February, 2016; originally announced February 2016.

Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz band

Authors: C. B. Lim, A. Ajay, C. Bougerol, B. Haas, J. Schörmann, M. Beeler, J. Lähnemann, M. Eickhoff, E. Monroy

Abstract: This paper assesses intersubband transitions in the 1 to 10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN substrates. The quantum wells were designed to contain two confined electronic levels, decoupled from the neighboring wells. Structural analysis reveals flat and regular quantum wells in the two perpendicular inplane direct… ▽ More This paper assesses intersubband transitions in the 1 to 10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN substrates. The quantum wells were designed to contain two confined electronic levels, decoupled from the neighboring wells. Structural analysis reveals flat and regular quantum wells in the two perpendicular inplane directions, with high-resolution images showing inhomogeneities of the Al composition in the barriers along the growth axis. We do not observe extended structural defects introduced by the epitaxial process. Low-temperature intersubband absorption from 1.5 to 9 THz is demonstrated, covering part of the 7 to 10 THz band forbidden to GaAs-based technologies. △ Less

Submitted 16 October, 2015; v1 submitted 1 June, 2015; originally announced June 2015.

Journal ref: Nanotechnology 26, 435201 (2015)

Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short and mid-wavelength infrared regions

Authors: C. B. Lim, M. Beeler, A. Ajay, J. Lähnemann, E. Bellet-Amalric, C. Bougerol, E. Monroy

Abstract: This paper assesses nonpolar m- and a-plane GaN/Al(Ga)N multi-quantum-wells grown on bulk GaN for intersubband optoelectronics in the short- and mid-wavelength infrared ranges. The characterization results are compared to those for reference samples grown on the polar c-plane, and are verified by self-consistent Schrödinger-Poisson calculations. The best results in terms of mosaicity, surface roug… ▽ More This paper assesses nonpolar m- and a-plane GaN/Al(Ga)N multi-quantum-wells grown on bulk GaN for intersubband optoelectronics in the short- and mid-wavelength infrared ranges. The characterization results are compared to those for reference samples grown on the polar c-plane, and are verified by self-consistent Schrödinger-Poisson calculations. The best results in terms of mosaicity, surface roughness, photoluminescence linewidth and intensity, as well as intersubband absorption are obtained from m-plane structures, which display room-temperature intersubband absorption in the range from 1.5 to 2.9 um. Based on these results, a series of m-plane GaN/AlGaN multi-quantum-wells were designed to determine the accessible spectral range in the mid-infrared. These samples exhibit tunable room-temperature intersubband absorption from 4.0 to 5.8 um, the long-wavelength limit being set by the absorption associated with the second order of the Reststrahlen band in the GaN substrates. △ Less

Submitted 20 April, 2015; originally announced April 2015.

Journal ref: J. Appl. Phys. 118, 014309 (2015)

Long-lived excitons in GaN/AlN nanowire heterostructures

Authors: M. Beeler, C. B. Lim, P. Hille, J. Bleuse, J. Schörmann, M. de la Mata, J. Arbiol, M. Eickhoff, E. Monroy

Abstract: GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. These phenomena are explained by the three-dimensional electric field distribution within the GaN nanodisks, which has an axial component in the range… ▽ More GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. These phenomena are explained by the three-dimensional electric field distribution within the GaN nanodisks, which has an axial component in the range of a few MV/cm associated to the spontaneous and piezoelectric polarization, and a radial piezoelectric contribution associated to the shear components of the lattice strain. At low dopant concentrations, a large electron-hole separation in both the axial and radial directions is present. The relatively weak radial electric fields, which are about one order of magnitude smaller than the axial fields, are rapidly screened by doping. This bidirectional screening leads to a radial and axial centralization of the hole underneath the electron, and consequently, to large decreases in PL decay times, in addition to luminescence blue shifts. △ Less

Submitted 20 April, 2015; v1 submitted 24 December, 2014; originally announced December 2014.

Journal ref: Phys. Rev. B 91, 205440 (2015)

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: growth conditions, strain relaxation and In incorporation kinetics

Authors: S. Valdueza-Felip, E. Bellet-Amalric, A. Núñez-Cascajero, Y. Wang, M. -P. Chauvat, P. Ruterana, S. Pouget, K. Lorenz, E. Alves, E. Monroy

Abstract: We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For In mole fractions x = 0.13-0.48, best structural and morphological quality is obtained under In excess conditions, at In accumulation limit, and at a growth temperature where InGaN decomposition is active. Under such cond… ▽ More We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For In mole fractions x = 0.13-0.48, best structural and morphological quality is obtained under In excess conditions, at In accumulation limit, and at a growth temperature where InGaN decomposition is active. Under such conditions, in situ and ex situ analysis of the evolution of the crystalline structure with the growth thickness points to an onset of misfit relaxation after the growth of 40 nm, and a gradual relaxation during more than 200 nm which results in an inhomogeneous strain distribution along the growth axis. This process is associated with a compositional pulling effect, i.e. indium incorporation is partially inhibited in presence of compressive strain, resulting in a compositional gradient with increasing In mole fraction towards the surface. △ Less

Submitted 6 January, 2015; v1 submitted 21 October, 2014; originally announced October 2014.

Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240-350 nm emission

Authors: C. Himwas, M. den Hertog, Le Si Dang, E. Monroy, R. Songmuang

Abstract: The Al-Ga intermixing at Al(Ga)N/GaN interfaces in nanowires and the chemical inhomogeneity in AlxGa1-xN/AlN nanodisks (NDs) are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with Al content, leading to enhanced carrier localiz… ▽ More The Al-Ga intermixing at Al(Ga)N/GaN interfaces in nanowires and the chemical inhomogeneity in AlxGa1-xN/AlN nanodisks (NDs) are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with Al content, leading to enhanced carrier localization signatures in their optical characteristics i.e. red shift of the emission, s-shaped temperature dependence and linewidth broadening. Despite these alloy fluctuations, the emission energy of AlGaN/AlN NDs can be tuned in the 240-350 nm range with internal quantum efficiencies around 30%. △ Less

Submitted 12 September, 2014; originally announced September 2014.

Polarization fields in GaN/AlN nanowire heterostructures studied by Off axis holography

Authors: Martien Den Hertog, Rudeesun Songmuang, Eva Monroy

Abstract: In this work, we present an off-axis holography study of GaN/AlN heterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. We discuss the sample preparation of nanowire samples for electron holography and combine potential profiles obtained using holography with theoretical calculations of the projected potential in order to gain understanding of the potential distribution in the… ▽ More In this work, we present an off-axis holography study of GaN/AlN heterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. We discuss the sample preparation of nanowire samples for electron holography and combine potential profiles obtained using holography with theoretical calculations of the projected potential in order to gain understanding of the potential distribution in these nanostructures. The effects of surface states are discussed △ Less

Submitted 10 April, 2014; originally announced April 2014.

Journal ref: Journal of Physics: Conference Series 471 (2013) 012019

Environmental sensitivity of n-i-n and undoped single GaN nanowire photodetectors

Authors: F. González-Posada, R. Songmuang, M. Den Hertog, E. Monroy

Abstract: In this work, we compare the photodetector performance of single defect-free undoped and n-in GaN nanowires (NWs). In vacuum, undoped NWs present a responsivity increment, nonlinearities and persistent photoconductivity effects (~ 100 s). Their unpinned Fermi level at the m-plane NW sidewalls enhances the surface states role in the photodetection dynamics. Air adsorbed oxygen accelerates the carri… ▽ More In this work, we compare the photodetector performance of single defect-free undoped and n-in GaN nanowires (NWs). In vacuum, undoped NWs present a responsivity increment, nonlinearities and persistent photoconductivity effects (~ 100 s). Their unpinned Fermi level at the m-plane NW sidewalls enhances the surface states role in the photodetection dynamics. Air adsorbed oxygen accelerates the carrier dynamics at the price of reducing the photoresponse. In contrast, in n-i-n NWs, the Fermi level pinning at the contact regions limits the photoinduced sweep of the surface band bending, and hence reduces the environment sensitivity and prevents persistent effects even in vacuum. △ Less

Submitted 7 December, 2012; originally announced December 2012.

Quantum transport in GaN/AlN double-barrier heterostructure nanowires

Authors: R. Songmuang, G. Katsaros, E. Monroy, P. Spathis, C. Bourgeral, M. Mongillo, S. De Franceschi

Abstract: We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type doping modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped mi… ▽ More We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type doping modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped middle region, forming single or multiple islands with a characteristic length of ~100 nm. The incorporation of two AlN tunnel barriers causes confinement to occur within the GaN well in between. In the case of 6-nm-thick wells and 2-nm-thick barriers, we observe characteristic signatures of Coulomb-blockaded transport in single quantum dots with discrete energy states. For narrower wells and barriers, Coulomb-blockade effects do not play a significant role while the onset of resonant tunneling via the confined quantum levels is accompanied by a negative differential resistance surviving up to ~150 K. △ Less

Submitted 20 May, 2010; originally announced May 2010.

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