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A way to identify whether a DFT gap is from right reasons or error cancellations: The case of copper chalcogenides
Authors:
Jiale Shen,
Haitao Liu,
Yuanchang Li
Abstract:
Gap opening remains elusive in copper chalcogenides (Cu$_{2}X$, $X$ = S, Se and Te), not least because Hubbard + $U$, hybrid functional and ${GW}$ methods have also failed. In this work, we elucidate that their failure originates from a severe underestimation of the 4$s$-3$d$ orbital splitting of the Cu atom, which leads to a band-order inversion in the presence of an anionic crystal field. As a r…
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Gap opening remains elusive in copper chalcogenides (Cu$_{2}X$, $X$ = S, Se and Te), not least because Hubbard + $U$, hybrid functional and ${GW}$ methods have also failed. In this work, we elucidate that their failure originates from a severe underestimation of the 4$s$-3$d$ orbital splitting of the Cu atom, which leads to a band-order inversion in the presence of an anionic crystal field. As a result, the Fermi energy is pinned due to symmetry, yielding an invariant zero gap. Utilizing the hybrid pseudopotentials to correct the underestimation on the atomic side opens up gaps of experimental magnitude in Cu$_{2}X$, suggesting their predominantly electronic nature. Our work not only clarifies the debate about the Cu$_{2}X$ gap, but also provides a way to identify which of the different methods really captures the physical essence and which is the result of error cancellation.
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Submitted 10 June, 2024;
originally announced June 2024.
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Ta2Pd3Te5 topological thermometer
Authors:
Yupeng Li,
Anqi Wang,
Senyang Pan,
Dayu Yan,
Guang Yang,
Xingchen Guo,
Yu Hong,
Guangtong Liu,
Fanming Qu,
Zhijun Wang,
Tian Qian,
Jinglei Zhang,
Youguo Shi,
Li Lu,
Jie Shen
Abstract:
In recent decades, there has been a persistent pursuit of applications for surface/edge states in topological systems, driven by their dissipationless transport effects. However, there have been limited tangible breakthroughs in this field. This work demonstrates the remarkable properties of the topological insulator Ta2Pd3Te5, as a thermometer. This material exhibits a power-law correlation in te…
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In recent decades, there has been a persistent pursuit of applications for surface/edge states in topological systems, driven by their dissipationless transport effects. However, there have been limited tangible breakthroughs in this field. This work demonstrates the remarkable properties of the topological insulator Ta2Pd3Te5, as a thermometer. This material exhibits a power-law correlation in temperature-dependent resistance at low temperatures, stemming from its Luttinger liquid behavior of edge states, while exhibiting semiconductor behavior at high temperatures. The power-law behavior effectively addresses the issue of infinite resistance in semiconductor thermometers at ultra-low temperatures, thereby playing a crucial role in enabling efficient thermometry in refrigerators supporting millikelvin temperatures or below. By employing chemical doping, adjusting thickness, and controlling gate voltage, its power-law behavior and semiconductor behavior can be effectively modulated. This enables efficient thermometry spanning from millikelvin temperatures to room temperature, and allows for precise local temperature measurement. Furthermore, this thermometer exhibits excellent temperature sensitivity and resolution, and can be fine-tuned to show small magnetoresistance. In summary, the Ta2Pd3Te5 thermometer, also referred to as a topological thermometer, exhibits outstanding performance and significant potential for measuring a wider range of temperatures compared to conventional low-temperature thermometers.
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Submitted 2 June, 2024;
originally announced June 2024.
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Wrinkling of differentially growing bilayers with similar film and substrate moduli
Authors:
Jiajia Shen,
Yibin Fu,
Alberto Pirrera,
Rainer M. J. Groh
Abstract:
The study of growth-induced surface wrinkling in constrained bilayers comprising a thin film attached to a thick substrate is a canonical model for understanding pattern formation in many biological systems. While the bilayer model has received much prior attention, the nonlinear behaviour for arrangements with similar film and substrate properties, or substrate growth that outpaces film growth, r…
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The study of growth-induced surface wrinkling in constrained bilayers comprising a thin film attached to a thick substrate is a canonical model for understanding pattern formation in many biological systems. While the bilayer model has received much prior attention, the nonlinear behaviour for arrangements with similar film and substrate properties, or substrate growth that outpaces film growth, remains poorly understood. This paper therefore focuses on these cases in which the substrate's elasticity dominates surface wrinkling. We study the critical states, and the initial and advanced post-critical behaviour of growing bilayers with film-to-substrate modulus ratios in the region of $2.5$--$50$, and cases where the substrate grows faster than the film. Based on nonlinear elasticity, we formulate analytical models for linear buckling analyses and asymptotic projections around the critical point, and use finite element (FE) models coupled to continuation and branch-switching algorithms to uncover the deep post-critical regime. It is shown that a rapidly growing substrate may change the critical mode from film-governed sinusoidal wrinkling to substrate-governed Biot wrinkling depending on the stiffness ratio and growth ratio. We present a phase change diagram of the post-critical modal landscape split into sinusoidal wrinkling, period doubling, period quadrupling, and creasing regimes in terms of the stiffness ratio and growth ratio. While the post-critical regime of film- and substrate-dominated bilayers (either in terms of dominant elasticity or growth rate) is governed by sinusoidal wrinkling and Biot creasing, respectively, the intermediate regions allow for period doubling and quadrupling bifurcations. Finally, we demonstrate the existence of multi-stability in the advanced post-buckling regimes for growing bilayers where growth in the substrate surpasses that of the film.
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Submitted 20 May, 2024;
originally announced May 2024.
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Charge-Transfer Hyperbolic Polaritons in $α$-MoO$_3$/graphene heterostructures
Authors:
J. Shen,
M. Chen,
V. Korostelev,
H. Kim,
P. Fathi-Hafshejani,
M. Mahjouri-Samani,
K. Klyukin,
G-H. Lee,
S. Dai
Abstract:
Charge transfer is a fundamental interface process that can be harnessed for light detection, photovoltaics, and photosynthesis. Recently, charge transfer was exploited in nanophotonics to alter plasmon polaritons by involving additional non-polaritonic materials to activate the charge transfer. Yet, direct charge transfer between polaritonic materials hasn't been demonstrated. We report the direc…
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Charge transfer is a fundamental interface process that can be harnessed for light detection, photovoltaics, and photosynthesis. Recently, charge transfer was exploited in nanophotonics to alter plasmon polaritons by involving additional non-polaritonic materials to activate the charge transfer. Yet, direct charge transfer between polaritonic materials hasn't been demonstrated. We report the direct charge transfer in pure polaritonic van der Waals (vdW) heterostructures of $α$-MoO$_3$/graphene. We extracted the Fermi energy of 0.6 eV for graphene by infrared nano-imaging of charge transfer hyperbolic polaritons in the vdW heterostructure. This unusually high Fermi energy is attributed to the charge transfer between graphene and $α$-MoO$_3$. Moreover, we have observed charge transfer hyperbolic polaritons in multiple energy-momentum dispersion branches with a wavelength elongation of up to 150%. With support from the DFT calculation, we find that the charge transfer between graphene and $α$-MoO$_3$, absent in mechanically assembled vdW heterostructures, is attributed to the relatively pristine heterointerface preserved in the epitaxially grown vdW heterostructure. The direct charge transfer and charge transfer hyperbolic polaritons demonstrated in our work hold great promise for developing nano-optical circuits, computational devices, communication systems, and light and energy manipulation devices.
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Submitted 14 May, 2024;
originally announced May 2024.
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Tunable superconductivity in electron- and hole-doped Bernal bilayer graphene
Authors:
Chushan Li,
Fan Xu,
Bohao Li,
Jiayi Li,
Guoan Li,
Kenji Watanabe,
Takashi Taniguchi,
Bingbing Tong,
Jie Shen,
Li Lu,
Jinfeng Jia,
Fengcheng Wu,
Xiaoxue Liu,
Tingxin Li
Abstract:
Graphene-based, high quality two-dimensional electronic systems have emerged as a highly tunable platform for studying superconductivity. Specifically, superconductivity has been observed in both electron-doped and hole-doped twisted graphene moire systems, whereas in crystalline graphene systems, superconductivity has so far only been observed in hole-doped rhombohedral trilayer and hole-doped Be…
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Graphene-based, high quality two-dimensional electronic systems have emerged as a highly tunable platform for studying superconductivity. Specifically, superconductivity has been observed in both electron-doped and hole-doped twisted graphene moire systems, whereas in crystalline graphene systems, superconductivity has so far only been observed in hole-doped rhombohedral trilayer and hole-doped Bernal bilayer graphene (BBG). Recently, enhanced superconductivity has been demonstrated in BBG due to the proximity with a monolayer WSe2. Here, we report the observation of superconductivity and a series of flavor-symmetry-breaking phases in both electron- and hole-doped BBG/WSe2 device by electrostatic doping. The strength of the observed superconductivity is tunable by applied vertical electric fields. The maximum Berezinskii-Kosterlitz-Thouless (BKT) transition temperature for the electron- and hole-doped superconductivity is about 210 mK and 400 mK, respectively. Superconductivities emerge only when applied electric fields drive BBG electron or hole wavefunctions toward the WSe2 layer, underscoring the importance of the WSe2 layer in the observed superconductivity. We find the hole-doped superconductivity violates the Pauli paramagnetic limit, consistent with an Ising-like superconductor. In contrast, the electron-doped superconductivity obeys the Pauli limit, even though the proximity induced Ising spin-orbit coupling is also notable in the conduction band. Our findings highlight the rich physics associated with the conduction band in BBG, paving the way for further studies into the superconducting mechanisms of crystalline graphene and the development of novel superconductor devices based on BBG.
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Submitted 7 May, 2024;
originally announced May 2024.
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Angle-Resolved Magneto-Chiral Anisotropy in a Non-Centrosymmetric Atomic Layer Superlattice
Authors:
Long Cheng,
Mingrui Bao,
Jingxian Zhang,
Xue Zhang,
Qun Yang,
Qiang Li,
Hui Cao,
Dawei Qiu,
Jia Liu,
Fei Ye,
Qing Wang,
Genhao Liang,
Hui Li,
Guanglei Cheng,
Hua Zhou,
Jian-Min Zuo,
Xiaodong Zhou,
Jian Shen,
Zhifeng Zhu,
Sai Mu,
Wenbo Wang,
Xiaofang Zhai
Abstract:
Chirality in solid-state materials has sparked significant interest due to potential applications of topologically-protected chiral states in next-generation information technology. The electrical magneto-chiral effect (eMChE), arising from relativistic spin-orbit interactions, shows great promise for developing chiral materials and devices for electronic integration. Here we demonstrate an angle-…
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Chirality in solid-state materials has sparked significant interest due to potential applications of topologically-protected chiral states in next-generation information technology. The electrical magneto-chiral effect (eMChE), arising from relativistic spin-orbit interactions, shows great promise for developing chiral materials and devices for electronic integration. Here we demonstrate an angle-resolved eMChE in an A-B-C-C type atomic-layer superlattice lacking time and space inversion symmetry. We observe non-superimposable enantiomers of left-handed and right-handed tilted uniaxial magnetic anisotropy as the sample rotates under static fields, with the tilting angle reaching a striking 45 degree. Magnetic force microscopy and atomistic simulations correlate the tilt to the emergence and evolution of chiral spin textures. The Dzyaloshinskii-Moriya interaction lock effect in competition with Zeeman effect is demonstrated to be responsible for the angle-resolved eMChE. Our findings open up a new horizon for engineering angle-resolved magneto-chiral anisotropy, shedding light on the development of novel angle-resolved sensing or writing techniques in chiral spintronics.
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Submitted 20 April, 2024;
originally announced April 2024.
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Spin-Energy Entanglement of a Time-Focused Neutron
Authors:
J. C. Leiner,
S. J. Kuhn,
S. McKay,
J. K. Jochum,
F. Li,
A. A. M. Irfan,
F. Funama,
D. Mettus,
L. Beddrich,
C. Franz,
J. Shen,
S. R. Parnell,
R. M. Dalgliesh,
M. Loyd,
N. Geerits,
G. Ortiz,
C. Pfleiderer,
R. Pynn
Abstract:
Intra-particle entanglement of individual particles such as neutrons could enable a new class of scattering probes that are sensitive to entanglement in quantum systems and materials. In this work, we present experimental results demonstrating quantum contextuality as a result of entanglement between the spin and energy modes (i.e., degrees of freedom) of single neutrons in a beam using a pair of…
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Intra-particle entanglement of individual particles such as neutrons could enable a new class of scattering probes that are sensitive to entanglement in quantum systems and materials. In this work, we present experimental results demonstrating quantum contextuality as a result of entanglement between the spin and energy modes (i.e., degrees of freedom) of single neutrons in a beam using a pair of resonant radio-frequency neutron spin flippers in the MIEZE configuration (Modulated IntEnsity with Zero Effort). We verified the mode-entanglement by measuring a Clauser-Horne-Shimony-Holt (CHSH) contextuality witness $S$ defined in the spin and energy subsystems, observing a clear breach of the classical bound of $|S| \leq 2$, obtaining $S = 2.40 \pm 0.02$. These entangled beams could enable novel approaches for directly probing dynamics and entanglement in quantum materials whose low-energy excitation scales match those of the incident entangled neutron.
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Submitted 11 April, 2024;
originally announced April 2024.
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On the interplay of liquid-like and stress-driven dynamics in a metallic glass former observed by temperature scanning XPCS
Authors:
Maximilian Frey,
Nico Neuber,
Sascha Sebastian Riegler,
Antoine Cornet,
Yuriy Chushkin,
Federico Zontone,
Lucas Ruschel,
Bastian Adam,
Mehran Nabahat,
Fan Yang,
Jie Shen,
Fabian Westermeier,
Michael Sprung,
Daniele Cangialosi,
Valerio Di Lisio,
Isabella Gallino,
Ralf Busch,
Beatrice Ruta,
Eloi Pineda
Abstract:
Modern detector technology and highly brilliant fourth-generation synchrotrons allow to improve the temporal resolution in time-resolved diffraction studies. Profiting from this, we applied temperature scanning X-ray photon correlation spectroscopy (XPCS) to probe the dynamics of a Pt-based metallic glass former in the glass, glass transition region, and supercooled liquid, covering up to six orde…
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Modern detector technology and highly brilliant fourth-generation synchrotrons allow to improve the temporal resolution in time-resolved diffraction studies. Profiting from this, we applied temperature scanning X-ray photon correlation spectroscopy (XPCS) to probe the dynamics of a Pt-based metallic glass former in the glass, glass transition region, and supercooled liquid, covering up to six orders of magnitude in time scales. Our data demonstrates that the structural alpha-relaxation process is still observable in the glass, although it is partially masked by a faster source of decorrelation observed at atomic scale. We present an approach that interprets these findings as the superposition of heterogeneous liquid-like and stress-driven ballistic-like atomic motions. This work not only extends the dynamical range probed by standard isothermal XPCS, but also clarifies the fate of the alpha-relaxation across the glass transition and provides a new perception on the anomalous, compressed temporal decay of the density-density correlation functions observed in metallic glasses and many out-of-equilibrium soft materials.
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Submitted 22 March, 2024; v1 submitted 18 March, 2024;
originally announced March 2024.
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Discovery of a Magnetic Topological Semimetal Eu$_3$In$_2$As$_4$ with a Single Pair of Weyl Points
Authors:
Ke Jia,
Jingyu Yao,
Xiaobo He,
Yupeng Li,
Junze Deng,
Ming Yang,
Junfeng Wang,
Zengwei Zhu,
Cuixiang Wang,
Dayu Yan,
Hai L. Feng,
Jie Shen,
Yongkang Luo,
Zhijun Wang,
Youguo Shi
Abstract:
Magnetic Weyl semimetal (MWS) is a unique topological state with open surface Fermi arc states and other exotic transport phenomena. However, most reported MWSs show multiple pairs of Weyl points and complicated Fermi surfaces, which increases the difficulty of the investigation into the intrinsic chiral transport property. In this wor, we successfully synthesized a soft magnetic Weyl semimetal Eu…
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Magnetic Weyl semimetal (MWS) is a unique topological state with open surface Fermi arc states and other exotic transport phenomena. However, most reported MWSs show multiple pairs of Weyl points and complicated Fermi surfaces, which increases the difficulty of the investigation into the intrinsic chiral transport property. In this wor, we successfully synthesized a soft magnetic Weyl semimetal Eu$_3$In$_2$As$_4$ with a single pair of Weyl points under magnetic fields. The Shubnikov de Haas (SdH) oscillation with a single frequency, as well as a linear hall resistance with the same carrier density, is observed up to 50 Tesla, indicating a single pair of Weyl points around the Fermi level with a massless fermion ($m^* = 0.121 m_0$, $π$ Berry phase). Such a single pair of Weyl points is further confirmed by the density functional theory calculations. The magnetic ordering and band topology can be easily tuned by the external magnetic field. The field-induced MWS Eu$_3$In$_2$As$_4$ with a single pair of Weyl points is a good platform to detect chiral transport properties, including possible quantum anomalous Hall effect.
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Submitted 12 March, 2024;
originally announced March 2024.
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Two-dimensional phase diagram of the charge density wave in doped CsV$_3$Sb$_5$
Authors:
Linwei Huai,
Hongyu Li,
Yulei Han,
Yang Luo,
Shuting Peng,
Zhiyuan Wei,
Jianchang Shen,
Bingqian Wang,
Yu Miao,
Xiupeng Sun,
Zhipeng Ou,
Bo Liu,
Xiaoxiao Yu,
Ziji Xiang,
Min-Quan Kuang,
Zhenhua Qiao,
Xianhui Chen,
Junfeng He
Abstract:
Kagome superconductors AV$_3$Sb$_5$ (A = K, Rb and Cs) have attracted much recent attention due to the coexistence of multiple exotic orders. Among them, the charge density wave (CDW) order has been shown to host various unconventional behaviors. Here, we investigate the CDW order by a combination of both bulk and surface doping methods. While element substitutions in bulk doping change both carri…
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Kagome superconductors AV$_3$Sb$_5$ (A = K, Rb and Cs) have attracted much recent attention due to the coexistence of multiple exotic orders. Among them, the charge density wave (CDW) order has been shown to host various unconventional behaviors. Here, we investigate the CDW order by a combination of both bulk and surface doping methods. While element substitutions in bulk doping change both carriers and the crystal lattice, the surface doping primarily tunes the carrier concentration. As such, our results reveal a two-dimensional phase diagram of the CDW in doped CsV$_3$Sb$_5$. In the lightly bulk doped regime, the existence of CDW order is reversible by tuning the carrier concentration. But excessive bulk doping permanently destroys the CDW, regardless of the carrier doping level. These results provide insights to the origin of the CDW from both electronic and structural degrees of freedom. They also open an avenue for manipulating the exotic CDW order in Kagome superconductors.
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Submitted 12 March, 2024;
originally announced March 2024.
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Simulating Charged Defects at Database Scale
Authors:
Jimmy-Xuan Shen,
Lars F. Voss,
Joel Basile Varley
Abstract:
Point defects have a strong influence on the physical properties of materials, often dominating the electronic and optical behavior in semiconductors and insulators. The simulation and analysis of point defects is therefore crucial for understanding the growth and operation of materials especially for optoelectronics applications. In this work, we present a general-purpose Python framework for the…
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Point defects have a strong influence on the physical properties of materials, often dominating the electronic and optical behavior in semiconductors and insulators. The simulation and analysis of point defects is therefore crucial for understanding the growth and operation of materials especially for optoelectronics applications. In this work, we present a general-purpose Python framework for the analysis of point defects in crystalline materials, as well as a generalized workflow for their treatment with high-throughput simulations. The distinguishing feature of our approach is an emphasis on a unique, unitcell, structure-only, definition of point defects which decouples the defect definition and the specific supercell representation used to simulate the defect. This allows the results of first-principles calculations to be aggregated into a database without extensive provenance information and is a crucial step in building a persistent database of point defects that can grow over time, a key component towards realizing the idea of a ``defect genome' that can yield more complex relationships governing the behavior of defects in materials. We demonstrate several examples of the approach for three technologically relevant materials and highlight current pitfalls that must be considered when employing these methodologies, as well as their potential solutions.
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Submitted 8 March, 2024;
originally announced March 2024.
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Light-induced giant enhancement of nonreciprocal transport at KTaO3-based interfaces
Authors:
Xu Zhang,
Tongshuai Zhu,
Shuai Zhang,
Zhongqiang Chen,
Anke Song,
Chong Zhang,
Rongzheng Gao,
Wei Niu,
Yequan Chen,
Fucong Fei,
Yilin Tai,
Guoan Li,
Binghui Ge,
Wenkai Lou,
Jie Shen,
Haijun Zhang,
Kai Chang,
Fengqi Song,
Rong Zhang,
Xuefeng Wang
Abstract:
Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal transport for promising rectification devices. Here, we observe a light-induced giant enhancement of nonreciprocal transport at the superconducting and e…
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Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal transport for promising rectification devices. Here, we observe a light-induced giant enhancement of nonreciprocal transport at the superconducting and epitaxial CaZrO3/KTaO3 (111) interfaces. The nonreciprocal transport coefficient undergoes a giant increase with three orders of magnitude up to 105 A-1T-1. Furthermore, a strong Rashba spin-orbit coupling effective field of 14.7 T is achieved with abundant high-mobility photocarriers under ultraviolet illumination, which accounts for the giant enhancement of nonreciprocal transport coefficient. Our first-principles calculations further disclose the stronger Rashba spin-orbit coupling strength and the longer relaxation time in the photocarrier excitation process, bridging the light-property quantitative relationship. Our work provides an alternative pathway to boost nonreciprocal transport in noncentrosymmetric systems and facilitates the promising applications in opto-rectification devices and spin-orbitronic devices.
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Submitted 7 March, 2024;
originally announced March 2024.
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Quantum counterdiabatic driving with local control
Authors:
Changhao Li,
Jiayu Shen,
Ruslan Shaydulin,
Marco Pistoia
Abstract:
Suppression of diabatic transitions in quantum adiabatic evolution stands as a significant challenge for ground state preparations. Counterdiabatic driving has been proposed to compensate for diabatic losses and achieve shortcut to adiabaticity. However, its implementation necessitates the generation of adiabatic gauge potential, which requires knowledge of the spectral gap of instantaneous Hamilt…
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Suppression of diabatic transitions in quantum adiabatic evolution stands as a significant challenge for ground state preparations. Counterdiabatic driving has been proposed to compensate for diabatic losses and achieve shortcut to adiabaticity. However, its implementation necessitates the generation of adiabatic gauge potential, which requires knowledge of the spectral gap of instantaneous Hamiltonians and involves highly non-local drivings in many-body systems. In this work, we consider local counterdiabatic (LCD) driving with approximate adiabatic gauge potential. Using transverse-field Ising model as an example, we present an in-depth study of the performance and optimization of LCD protocols. We then propose a novel two-step protocol based on LCD and simple local single-body control to further improve the performance. The optimization of these LCD-based protocols does not require knowledge of instantaneous Hamiltonians, and only additional local driving is involved. To benchmark the performance of LCD and the proposed local control-enhanced LCD technique, we experimentally implement digitized adiabatic quantum evolution in a trapped-ion system. We characterize the quality of the prepared states and explore the scaling behavior with system size up to 14 qubits. Our demonstration of quantum shortcut to adiabaticity opens a path towards preparing ground states of complex systems with accessible local controls.
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Submitted 4 March, 2024;
originally announced March 2024.
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Thermal stabilities Landscape of A$_2$BB$^{\prime}$O$_6$ compounds
Authors:
Yateng Wang,
Bianca Baldassarri,
Jiahong Shen,
Jiangang He,
Chris Wolverton
Abstract:
Perovskite oxides have been extensively studied for their wide range of compositions and structures, as well as their valuable properties for various applications. Expanding from single perovskite ABO$_3$ to double perovskite $A_2BB^{\prime}$O$_6$ significantly enhances the ability to tailor specific physical and chemical properties. However, the vast number of potential compositions of…
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Perovskite oxides have been extensively studied for their wide range of compositions and structures, as well as their valuable properties for various applications. Expanding from single perovskite ABO$_3$ to double perovskite $A_2BB^{\prime}$O$_6$ significantly enhances the ability to tailor specific physical and chemical properties. However, the vast number of potential compositions of $A_2BB^{\prime}$O$_6$ makes it impractical to explore them all experimentally. In this study, we conducted high-throughput calculations to systematically investigate the structures and stabilities of 4,900 $A_2BB^{\prime}$O$_6$ compositions (with $A$ = Ca, Sr, Ba, and La; $B$ and $B^{\prime}$ representing metal elements) through over 42,000 density functional theory (DFT) calculations. Our analysis lead to the discovery of more than 1,500 new synthesizable $A_2BB^{\prime}$O$_6$ compounds, with over 1,100 of them exhibiting double perovskite structures, predominantly in the $P2_1/c$ space group. By leveraging the high-throughput dataset, we developed machine learning models that achieved mean absolute errors of 0.0444 and 0.0330 eV/atom for formation energy and decomposition energy, respectively. Using these models, we identified 803 stable or metastable compositions beyond the chemical space covered in our initial calculations, with 612 of them having DFT-validated decomposition energies below 0.1 eV/atom, resulting in a success rate of 76.2 \%. This study delineates the stability landscape of $A_2BB^{\prime}$O$_6$ compounds and offers new insights for the exploration of these materials.
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Submitted 29 February, 2024;
originally announced February 2024.
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Observation of the In-plane Anomalous Hall Effect induced by Octupole in Magnetization Space
Authors:
Wenzhi Peng,
Zheng Liu,
Haolin Pan,
Peng Wang,
Yulong Chen,
Jiachen Zhang,
Xuhao Yu,
Jinhui Shen,
Mingmin Yang,
Qian Niu,
Yang Gao,
Dazhi Hou
Abstract:
The Anomalous Hall Effect (AHE) manifests as a transverse voltage proportional to magnetization in ferromagnetic materials under the application of a charge current, being an indispensable tool for probing magnetism, especially in nanoscale devices. However, the AHE primarily sensitizes to out-of-plane magnetization, thereby hindering its capacity to discern the in-plane magnetization, a character…
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The Anomalous Hall Effect (AHE) manifests as a transverse voltage proportional to magnetization in ferromagnetic materials under the application of a charge current, being an indispensable tool for probing magnetism, especially in nanoscale devices. However, the AHE primarily sensitizes to out-of-plane magnetization, thereby hindering its capacity to discern the in-plane magnetization, a characteristic prevalent in ferromagnetic films. Here we challenge this conventional understanding by demonstrating the in-plane magnetization-induced AHE in iron and nickel, two ubiquitous ferromagnets. This observation of the in-plane AHE is remarkable as it contradicts existing theories that forbid such phenomena in cubic crystal systems. We trace the origin of this unanticipated phenomenon to a hitherto unconsidered octupole of the anomalous Hall conductivity in the magnetization space, a mechanism we propose could enable the detection of in-plane AHE in a wide range of ferromagnetic materials. This work realizes the in-plane AHE in common ferromagnets by exploiting the anomalous Hall conductivity octupole, revealing a new physical origin of the AHE and promising to revolutionize the design of magnetic devices and sensors.
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Submitted 24 February, 2024;
originally announced February 2024.
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Pressure tunable magnetic skyrmion phase in Co8Zn8Mn4 single crystals
Authors:
Zhun Li,
Xinrun Mi,
Xinming Wang,
Jian Lyu,
Na Su,
Aifeng Wang,
Yisheng Chai,
Bao Yuan,
Wanju Luo,
Hui Cheng,
Jianxiang Gao,
Hongliang Wang,
Lijie Hao,
Mingquan He,
Junying Shen,
Young Sun,
Xin Tong
Abstract:
In a magnetic skyrmion phase, magnetic moments form vortex-like topological textures which are of both fundamental and industrial interests. In $β$-Mn-type Co-Zn-Mn alloys, chrial magnetic skyrmions emerge above room temperature, providing a unique system for studying the skrymion physics and exploring spintronics applications. However, the magnetic skyrmion phase is typically confined in a narrow…
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In a magnetic skyrmion phase, magnetic moments form vortex-like topological textures which are of both fundamental and industrial interests. In $β$-Mn-type Co-Zn-Mn alloys, chrial magnetic skyrmions emerge above room temperature, providing a unique system for studying the skrymion physics and exploring spintronics applications. However, the magnetic skyrmion phase is typically confined in a narrow and limited temperature ($T$) and magnetic field ($H$) range. Here, we demonstrate that hydrostatic pressure can expand the skyrmion phase in the $T-H$ phase diagram of single-crystalline Co$_8$Zn$_8$Mn$_4$. At ambient pressure, signatures of skyrmions are seen within $T\sim302-308$ K and $H\sim50-100$ Oe. Applying a moderate pressure of 6 kbar extends this range to $T\sim300-310$ K and $H\sim50-150$ Oe. However, further escalation of pressure to 10 kbar results in a slight contraction of the skyrmion phase. These findings underscore the sensitivity of the skyrmion phase in Co$_8$Zn$_8$Mn$_4$ to external pressures, and hint at the potential of strain engineering, particularly in $β$-Mn-type Co-Zn-Mn thin films, as a promising avenue to customize the skyrmion phase.
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Submitted 22 February, 2024;
originally announced February 2024.
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High pressure X-Ray Photon Correlation Spectroscopy at 4th generation synchrotron sources
Authors:
Antoine Cornet,
Alberto Ronca,
Jie Shen,
Federico Zontone,
Yuriy Chushkin,
Marco Cammarata,
Gaston Garbarino,
Michael Sprung,
Fabian Westermaier,
Thierry Deschamps,
Beatrice Ruta
Abstract:
A new experimental setup combining X-Ray Photon Correlation Spectroscopy (XPCS) in the hard x-ray regime and a high-pressure sample environment is developed to monitor the pressure dependence of the internal motion of complex systems down to the atomic scale in the multi-GPa range, from room temperature to 600K. The high flux of coherent high energy x-rays at 4th generation synchrotron source solv…
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A new experimental setup combining X-Ray Photon Correlation Spectroscopy (XPCS) in the hard x-ray regime and a high-pressure sample environment is developed to monitor the pressure dependence of the internal motion of complex systems down to the atomic scale in the multi-GPa range, from room temperature to 600K. The high flux of coherent high energy x-rays at 4th generation synchrotron source solves the problems caused by the absorption of the Diamond Anvil Cells used to generate the high pressure, enabling the measurement of the intermediate scattering function over 6 orders of magnitude in time, from $10^{-3}$ s to $10^{3}$s. The constraints posed by the high-pressure generation such as the preservation of the x-ray's coherence, as well as the sample, pressure and temperature stability are discussed, and the feasibility of high pressure XPCS is demonstrated through results obtained on metallic glasses.
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Submitted 16 February, 2024; v1 submitted 7 February, 2024;
originally announced February 2024.
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Microwave-assisted unidirectional superconductivity in Al-InAs nanowire-Al junctions under magnetic fields
Authors:
Haitian Su,
Ji-Yin Wang,
Han Gao,
Yi Luo,
Shili Yan,
Xingjun Wu,
Guoan Li,
Jie Shen,
Li Lu,
Dong Pan,
Jianhua Zhao,
Po Zhang,
H. Q. Xu
Abstract:
Under certain symmetry-breaking conditions, a superconducting system exhibits asymmetric critical currents, dubbed the ``superconducting diode effect" (SDE). Recently, systems with the ideal superconducting diode efficiency or unidirectional superconductivity (USC) have received considerable interest. In this work, we report the study of Al-InAs nanowire-Al Josephson junctions under microwave irra…
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Under certain symmetry-breaking conditions, a superconducting system exhibits asymmetric critical currents, dubbed the ``superconducting diode effect" (SDE). Recently, systems with the ideal superconducting diode efficiency or unidirectional superconductivity (USC) have received considerable interest. In this work, we report the study of Al-InAs nanowire-Al Josephson junctions under microwave irradiation and magnetic fields. We observe an enhancement of SDE under microwave driving, featured by a horizontal offset of the zero-voltage step in the voltage-current characteristic that increases with microwave power. Devices reach the USC regime at sufficiently high driving amplitudes. The offset changes sign with the reversal of the magnetic field direction. Meanwhile, the offset magnitude exhibits a roughly linear response to the microwave power in dBm when both the power and the magnetic field are large. The signatures observed are reminiscent of a recent theoretical proposal using the resistively shunted junction (RSJ) model. However, the experimental results are not fully explained by the RSJ model, indicating a new mechanism for USC that is possibly related to non-equilibrium dynamics in periodically driven superconducting systems.
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Submitted 3 February, 2024;
originally announced February 2024.
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Correlation between magnetic domain structures and quantum anomalous Hall effect in epitaxial MnBi2Te4 thin films
Authors:
Yang Shi,
Yunhe Bai,
Yuanzhao Li,
Yang Feng,
Qiang Li,
Huanyu Zhang,
Yang Chen,
Yitian Tong,
Jianli Luan,
Ruixuan Liu,
Pengfei Ji,
Zongwei Gao,
Hangwen Guo,
Jinsong Zhang,
Yayu Wang,
Xiao Feng,
Ke He,
Xiaodong Zhou,
Jian Shen
Abstract:
We use magnetic force microscopy (MFM) to study spatial uniformity of magnetization of epitaxially grown MnBi2Te4 thin films. Compared to films which exhibit no quantum anomalous Hall effect (QAH), films with QAH are observed to have more spatial uniformity of magnetization with larger domain size. The domain evolution upon magnetic field sweeping indicates that the magnetic domains or the spatial…
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We use magnetic force microscopy (MFM) to study spatial uniformity of magnetization of epitaxially grown MnBi2Te4 thin films. Compared to films which exhibit no quantum anomalous Hall effect (QAH), films with QAH are observed to have more spatial uniformity of magnetization with larger domain size. The domain evolution upon magnetic field sweeping indicates that the magnetic domains or the spatial nonuniformity of magnetization originates from the strong pinning of the inherent sample inhomogeneity. A direct correlation between the Hall resistivity and the domain size has been established by analyzing a series of thin films with and without QAH. Our observation shows that one has to suppress the spatial nonuniformity of magnetization to allow the Hall resistivity to be quantized. The fact that a sizable longitudinal resistivity remains even for the QAH sample suggests a quantized Hall insulator scenario. Our work provides important insights to the understanding of the quantization mechanism and the dissipation of the QAH state in MnBi2Te4 system.
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Submitted 23 January, 2024;
originally announced January 2024.
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Reentrant quantum anomalous Hall effect in molecular beam epitaxy-grown MnBi2Te4 thin films
Authors:
Yuanzhao Li,
Yunhe Bai,
Yang Feng,
Jianli Luan,
Zongwei Gao,
Yang Chen,
Yitian Tong,
Ruixuan Liu,
Su Kong Chong,
Kang L. Wang,
Xiaodong Zhou,
Jian Shen,
Jinsong Zhang,
Yayu Wang,
Chui-Zhen Chen,
XinCheng Xie,
Xiao Feng,
Ke He,
Qi-Kun Xue
Abstract:
In this study, we investigate intrinsic magnetic topological insulator MnBi2Te4 thin films grown by molecular beam epitaxy. We observe a reentrant quantum anomalous Hall effect when the Fermi energy enters the valance band and magnetic field equals zero, indicating the emergence of the Chern Anderson insulator state. The discovery opens a new avenue for realizing the QAH effect and underscores the…
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In this study, we investigate intrinsic magnetic topological insulator MnBi2Te4 thin films grown by molecular beam epitaxy. We observe a reentrant quantum anomalous Hall effect when the Fermi energy enters the valance band and magnetic field equals zero, indicating the emergence of the Chern Anderson insulator state. The discovery opens a new avenue for realizing the QAH effect and underscores the fundamental role of both Berry curvature and Anderson localization.
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Submitted 21 January, 2024;
originally announced January 2024.
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Discovery of acousto-drag photovoltaic effect
Authors:
Jiaming Gu,
Yicheng Mou,
Jianwen Ma,
Haonan Chen,
Chuanxin Zhang,
Yuxiang Wang,
Jiayu Wang,
Hangwen Guo,
Wu Shi,
Xiang Yuan,
Xue Jiang,
Dean Ta,
Jian Shen,
Cheng Zhang
Abstract:
As a key ingredient in energy harvesting and photodetection, light-to-electricity conversion requires efficient separation of photoexcited electron-hole pairs before recombination. Traditional junction-based mechanisms mainly use build-in electric fields to achieve pair separation and generate photovoltaic effect, which fail to collect photoexcited pairs away from local barrier region. The ability…
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As a key ingredient in energy harvesting and photodetection, light-to-electricity conversion requires efficient separation of photoexcited electron-hole pairs before recombination. Traditional junction-based mechanisms mainly use build-in electric fields to achieve pair separation and generate photovoltaic effect, which fail to collect photoexcited pairs away from local barrier region. The ability to harvest photovoltaic effect in a homogeneous material upon uniform illumination is appealing, but has only been realized in very few cases such as non-centrosymmetric systems through bulk photovoltaic effect. Here we realize a new type of photovoltaic effect, termed as acousto-drag photovoltaic effect, by travelling surface acoustic waves (t-SAW) in a conventional layered semiconductor MoSe2. Instead of immediately driving the electron-hole pairs to opposite directions after generation, t-SAW induces periodic modulation to electronic bands and drags the photoexcited pairs toward the same travelling direction. The photocurrent can then be extracted by a local barrier, e.g. the metal-semiconductor contact as we used here. By spatially separating the electron-hole generation and extraction processes, the acousto-drag mechanism strongly suppresses charge recombination and yields large nonlocal photoresponse outside the barrier region. We show that when t-SAW is applied, the photoresponse can be enhanced by over two orders of magnitude with exceptionally high external quantum efficiency above 60%. The discovery of acousto-drag photovoltaic effect establishes a new approach towards efficient light-to-electricity conversion without the restriction of crystal symmetry.
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Submitted 26 December, 2023;
originally announced December 2023.
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Spontaneous gap opening and potential excitonic states in an ideal Dirac semimetal Ta$_2$Pd$_3$Te$_5$
Authors:
Peng Zhang,
Yuyang Dong,
Dayu Yan,
Bei Jiang,
Tao Yang,
Jun Li,
Zhaopeng Guo,
Yong Huang,
Bo Hao,
Qing Li,
Yupeng Li,
Kifu Kurokawa,
Rui Wang,
Yuefeng Nie,
Makoto Hashimoto,
Donghui Lu,
Wen-He Jiao,
Jie Shen,
Tian Qian,
Zhijun Wang,
Youguo Shi,
Takeshi Kondo
Abstract:
The opening of an energy gap in the electronic structure generally indicates the presence of interactions. In materials with low carrier density and short screening length, long-range Coulomb interaction favors the spontaneous formation of electron-hole pairs, so-called excitons, opening an excitonic gap at the Fermi level. Excitonic materials host unique phenomenons associated with pair excitatio…
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The opening of an energy gap in the electronic structure generally indicates the presence of interactions. In materials with low carrier density and short screening length, long-range Coulomb interaction favors the spontaneous formation of electron-hole pairs, so-called excitons, opening an excitonic gap at the Fermi level. Excitonic materials host unique phenomenons associated with pair excitations. However, there is still no generally recognized single-crystal material with excitonic order, which is, therefore, awaited in condensed matter physics. Here, we show that excitonic states may exist in the quasi-one-dimensional material Ta$_2$Pd$_3$Te$_5$, which has an almost ideal Dirac-like band structure, with Dirac point located exactly at Fermi level. We find that an energy gap appears at 350 K, and it grows with decreasing temperature. The spontaneous gap opening is absent in a similar material Ta$_2$Ni$_3$Te$_5$. Intriguingly, the gap is destroyed by the potassium deposition on the crystal, likely due to extra-doped carriers. Furthermore, we observe a pair of in-gap flat bands, which is an analog of the impurity states in a superconducting gap. All these observations can be properly explained by an excitonic order, providing Ta$_2$Pd$_3$Te$_5$ as a new and promising candidate realizing excitonic states.
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Submitted 15 March, 2024; v1 submitted 22 December, 2023;
originally announced December 2023.
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Evidence for an Excitonic Insulator State in Ta$_2$Pd$_3$Te$_5$
Authors:
Jierui Huang,
Bei Jiang,
Jingyu Yao,
Dayu Yan,
Xincheng Lei,
Jiacheng Gao,
Zhaopeng Guo,
Feng Jin,
Yupeng Li,
Zhenyu Yuan,
Congcong Chai,
Haohao Sheng,
Mojun Pan,
Famin Chen,
Junde Liu,
Shunye Gao,
Gexing Qu,
Bo Liu,
Zhicheng Jiang,
Zhengtai Liu,
Xiaoyan Ma,
Shiming Zhou,
Yaobo Huang,
Chenxia Yun,
Qingming Zhang
, et al. (8 additional authors not shown)
Abstract:
The excitonic insulator (EI) is an exotic ground state of narrow-gap semiconductors and semimetals arising from spontaneous condensation of electron-hole pairs bound by attractive Coulomb interaction. Despite research on EIs dating back to half a century ago, their existence in real materials remains a subject of ongoing debate. In this study, through systematic experimental and theoretical invest…
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The excitonic insulator (EI) is an exotic ground state of narrow-gap semiconductors and semimetals arising from spontaneous condensation of electron-hole pairs bound by attractive Coulomb interaction. Despite research on EIs dating back to half a century ago, their existence in real materials remains a subject of ongoing debate. In this study, through systematic experimental and theoretical investigations, we provide evidence for the existence of an EI ground state in a van der Waals compound Ta$_2$Pd$_3$Te$_5$. Density-functional-theory calculations suggest that it is a semimetal with a small band overlap, whereas various experiments exhibit an insulating ground state with a clear band gap. Upon incorporating electron-hole Coulomb interaction into our calculations, we obtain an EI phase where the electronic symmetry breaking opens a many-body gap. Angle-resolved photoemission spectroscopy measurements exhibit that the band gap is closed with a significant change in the dispersions as the number of thermally excited charge carriers becomes sufficiently large in both equilibrium and nonequilibrium states. Structural measurements reveal a slight breaking of crystal symmetry with exceptionally small lattice distortion in the insulating state, which cannot account for the significant gap opening. Therefore, we attribute the insulating ground state with a gap opening in Ta$_2$Pd$_3$Te$_5$ to exciton condensation, where the coupling to the symmetry-breaking electronic state induces a subtle change in the crystal structure.
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Submitted 14 March, 2024; v1 submitted 22 December, 2023;
originally announced December 2023.
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Giant domain wall anomalous Hall effect in an antiferromagnet
Authors:
Wei Xia,
Bo Bai,
Xuejiao Chen,
Yichen Yang,
Yang Zhang,
Jian Yuan,
Qiang Li,
Kunya Yang,
Xiangqi Liu,
Yang Shi,
Haiyang Ma,
Huali Yang,
Mingquan He,
Lei Li,
Chuanying Xi,
Li Pi,
Xiaodong Lv,
Xia Wang,
Xuerong Liu,
Shiyan Li,
Xiaodong Zhou,
Jianpeng Liu,
Yulin Chen,
Jian Shen,
Dawei Shen
, et al. (3 additional authors not shown)
Abstract:
The Hall effect plays a crucial role in establishment of band theory of solids and discovery of emergent new phases of interacting electrons such as the topological phases of matter. Generally, the dissipationless Hall effect requires time-reversal symmetry breaking (TRSB), where TRSB induced by external magnetic field results in ordinary Hall effect, while TRSB caused by spontaneous magnetization…
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The Hall effect plays a crucial role in establishment of band theory of solids and discovery of emergent new phases of interacting electrons such as the topological phases of matter. Generally, the dissipationless Hall effect requires time-reversal symmetry breaking (TRSB), where TRSB induced by external magnetic field results in ordinary Hall effect, while TRSB caused by spontaneous magnetization gives rise to anomalous Hall effect (AHE) which scales with the net magnetization. The AHE is therefore not expected in antiferromagnets with vanishing small magnetization. However, large AHE was recently observed in certain antiferromagnets with noncolinear spin structure and nonvanishing Berry curvature, thus opening a new area for exploration of large AHE in antiferromagnets. Here, we report another origin of AHE in a layered antiferromagnet, namely the domain wall (DW) skew scattering with Weyl points near the Fermi level, in experiments for the first time. Interestingly, the DWs form a unique periodic stripe structure with controllable periodicity by external magnetic field, which decreases nearly monotonically from 975 nm at 0 T to 232 nm at 4 T. Electrons incident on DW with topological bound states experience strong asymmetric scattering, leading to giant extrinsic AHE, with the DW Hall conductivity (DWHC) at 2 K and 1.2 T even reaching a record value of about 1.51*104 S cm-1 among bulk systems, which is two orders of magnitude larger than the intrinsic anomalous Hall conductivity. The observation of giant DWHC and controllable stripe DW structure in an antiferromagnet not only sets a new paradigm for exploration of large extrinsic anomalous Hall effect, but also provides potential applications in spintronic devices.
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Submitted 12 December, 2023;
originally announced December 2023.
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Large nonlinear Hall effect and Berry curvature in KTaO3 based two-dimensional electron gas
Authors:
Jinfeng Zhai,
Mattia Trama,
Hao Liu,
Zhifei Zhu,
Yinyan Zhu,
Carmine Antonio Perroni,
Roberta Citro,
Pan He,
Jian Shen
Abstract:
The two-dimensional electron gas (2DEG) at oxide interfaces exhibits various exotic properties stemming from interfacial inversion symmetry breaking. In this work, we report the emergence of large nonlinear Hall effects (NHE) in the LaAlO3/KTaO3(111) interface 2DEG under zero magnetic field. Skew scattering was identified as the dominant origin based on the cubic scaling of nonlinear Hall conducti…
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The two-dimensional electron gas (2DEG) at oxide interfaces exhibits various exotic properties stemming from interfacial inversion symmetry breaking. In this work, we report the emergence of large nonlinear Hall effects (NHE) in the LaAlO3/KTaO3(111) interface 2DEG under zero magnetic field. Skew scattering was identified as the dominant origin based on the cubic scaling of nonlinear Hall conductivity with longitudinal conductivity and the threefold symmetry. Moreover, a gate-tunable NHE with pronounced peak and dip was observed and reproduced by our theoretical calculation. These results indicate the presence of Berry curvature hotspots and thus a large Berry curvature triple at the oxide interface. Our theoretical calculations confirm the existence of large Berry curvatures from the avoided crossing of multiple 5d-orbit bands, orders of magnitude larger than that in transition-metal dichalcogenides. NHE offers a new pathway to probe the Berry curvature at oxide interfaces, and facilitates new applications in oxide nonlinear electronics.
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Submitted 9 December, 2023;
originally announced December 2023.
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Applications of Domain Adversarial Neural Network in phase transition of 3D Potts model
Authors:
Xiangna Chen,
Feiyi Liu,
Weibing Deng,
Shiyang Chen,
Jianmin Shen,
Gabor Papp,
Wei Li,
Chunbin Yang
Abstract:
Machine learning techniques exhibit significant performance in discriminating different phases of matter and provide a new avenue for studying phase transitions. We investigate the phase transitions of three dimensional $q$-state Potts model on cubic lattice by using a transfer learning approach, Domain Adversarial Neural Network (DANN). With the unique neural network architecture, it could evalua…
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Machine learning techniques exhibit significant performance in discriminating different phases of matter and provide a new avenue for studying phase transitions. We investigate the phase transitions of three dimensional $q$-state Potts model on cubic lattice by using a transfer learning approach, Domain Adversarial Neural Network (DANN). With the unique neural network architecture, it could evaluate the high-temperature (disordered) and low-temperature (ordered) phases, and identify the first and second order phase transitions. Meanwhile, by training the DANN with a few labeled configurations, the critical points for $q=2,3,4$ and $5$ can be predicted with high accuracy, which are consistent with those of the Monte Carlo simulations. These findings would promote us to learn and explore the properties of phase transitions in high-dimensional systems.
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Submitted 19 February, 2024; v1 submitted 4 December, 2023;
originally announced December 2023.
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Particle density and critical point for studying site percolation by finite size scaling
Authors:
Dian Xu,
Shanshan Wang,
Feng Gao,
Wei Li,
Jianmin Shen
Abstract:
Machine learning has recently achieved remarkable success in studying phase transitions. It is generally believed that the latent variables of unsupervised learning can capture the information related to phase transitions, which is usually achieved through the so-called order parameter. In most models, for instance the Ising, the order parameters are simply the particle number densities. The perco…
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Machine learning has recently achieved remarkable success in studying phase transitions. It is generally believed that the latent variables of unsupervised learning can capture the information related to phase transitions, which is usually achieved through the so-called order parameter. In most models, for instance the Ising, the order parameters are simply the particle number densities. The percolation, the simplest model which can generate a phase transition, however, has a unique order parameter which is not particle number density. In this paper, we use unsupervised learning to study the relationship between particle number density, critical point, and latent variables in the site percolation model. It is found that if the input of learning is the original configuration, then the output of unsupervised learning does not convey any information related to the phase transition. Therefore, the maximum cluster is employed in order to effectively capture the critical point of the model. Unsupervised learning yields reliable results consistent with Monte Carlo simulations. We also propose a method called Fake Finite Size Scaling (FFSS) to calculate the critical value, which improves the accuracy of fitting to a great extent.
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Submitted 8 May, 2024; v1 submitted 20 November, 2023;
originally announced November 2023.
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Infrared Imaging of Magnetic Octupole Domains in Non-collinear Antiferromagnets
Authors:
Peng Wang,
Wei Xia,
Jinhui Shen,
Yulong Chen,
Wenzhi Peng,
Jiachen Zhang,
Haolin Pan,
Xuhao Yu,
Zheng Liu,
Yang Gao,
Qian Niu,
Zhian Xu,
Hongtao Yang,
Yanfeng Guo,
Dazhi Hou
Abstract:
Magnetic structure plays a pivotal role in the functionality of antiferromagnets (AFMs), which not only can be employed to encode digital data but also yields novel phenomena. Despite its growing significance, visualizing the antiferromagnetic domain structure remains a challenge, particularly for non-collinear AFMs. Currently, the observation of magnetic domains in non-collinear antiferromagnetic…
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Magnetic structure plays a pivotal role in the functionality of antiferromagnets (AFMs), which not only can be employed to encode digital data but also yields novel phenomena. Despite its growing significance, visualizing the antiferromagnetic domain structure remains a challenge, particularly for non-collinear AFMs. Currently, the observation of magnetic domains in non-collinear antiferromagnetic materials is feasible only in Mn$_{3}$Sn, underscoring the limitations of existing techniques that necessitate distinct methods for in-plane and out-of-plane magnetic domain imaging. In this study, we present a versatile method for imaging the antiferromagnetic domain structure in a series of non-collinear antiferromagnetic materials by utilizing the anomalous Ettingshausen effect (AEE), which resolves both the magnetic octupole moments parallel and perpendicular to the sample surface. Temperature modulation due to the AEE originating from different magnetic domains is measured by the lock-in thermography, revealing distinct behaviors of octupole domains in different antiferromagnets. This work delivers an efficient technique for the visualization of magnetic domains in non-collinear AFMs, which enables comprehensive study of the magnetization process at the microscopic level and paves the way for potential advancements in applications.
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Submitted 15 November, 2023;
originally announced November 2023.
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Non-volatile memory based on PZT/FeGa thin film memtranstor
Authors:
Jin-Cheng He,
Jian Xing,
Jian-Xin Shen,
Dan Su,
En-Ke Liu,
Shou-Guo Wang,
Young Sun
Abstract:
The PZT/FeGa thin film memtranstor was prepared and the modulation of the magnetoelectric coefficient by external magnetic and electric fields was studied. The magnetoelectric coefficient of the PZT/FeGa memtranstor can be reversed by flipping the direction of magnetization of FeGa or ferroelectric polarization of PZT. Notably, the sign of the magnetoelectric coefficient can be switched repeatedly…
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The PZT/FeGa thin film memtranstor was prepared and the modulation of the magnetoelectric coefficient by external magnetic and electric fields was studied. The magnetoelectric coefficient of the PZT/FeGa memtranstor can be reversed by flipping the direction of magnetization of FeGa or ferroelectric polarization of PZT. Notably, the sign of the magnetoelectric coefficient can be switched repeatedly by reversing ferroelectric polarization of PZT when the external magnetic field remains constant. Moreover, the binary switching behavior can still be maintained under zero DC bias magnetic field. When the polarization direction remains stable, the magnetoelectric coefficient also does not change. This means that the magnetoelectric coefficient of PZT/FeGa is non-volatile. Furthermore, the retention and endurance characteristics of the PZT/FeGa thin film memtranstor have been investigated. These findings demonstrate the potential of the PZT/FeGa thin film memtranstor for non-volatile memory applications.
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Submitted 23 October, 2023;
originally announced October 2023.
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Phase Stability of Lead Phosphate Apatite Pb$_{10-x}$Cu$_{x}$(PO$_{4}$)$_{6}$O, Pb$_{10-x}$Cu$_{x}$(PO$_{4}$)$_{6}$(OH)$_{2}$, and Pb$_{8}$Cu$_{2}$(PO$_{4}$)$_{6}$
Authors:
Jiahong Shen,
Dale Gaines II,
Shima Shahabfar,
Zhi Li,
Dohun Kang,
Sean Griesemer,
Adolfo Salgado-Casanova,
Tzu-chen Liu,
Chang-Ti Chou,
Yi Xia,
Chris Wolverton
Abstract:
Recently, Cu-substituted lead apatite LK-99 was reported to have room-temperature ambient-pressure superconductivity. Here we utilize density functional theory (DFT) total energy and harmonic phonon calculations to investigate the thermodynamic and dynamic stability of two lead phosphate apatites in their pure and Cu-substituted structures. Though Pb$_{10}$(PO$_4$)$_6$O and Pb$_{10}$(PO$_4$)$_6$(O…
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Recently, Cu-substituted lead apatite LK-99 was reported to have room-temperature ambient-pressure superconductivity. Here we utilize density functional theory (DFT) total energy and harmonic phonon calculations to investigate the thermodynamic and dynamic stability of two lead phosphate apatites in their pure and Cu-substituted structures. Though Pb$_{10}$(PO$_4$)$_6$O and Pb$_{10}$(PO$_4$)$_6$(OH)$_2$ are found to be thermodynamically stable (i.e., on the T=0K ground state convex hull), their Cu-substituted counterparts are above the convex hull. Harmonic phonon calculations reveal dynamic instabilities in all four of these structures. Oxygen vacancy formation energies demonstrate that the addition of Cu dopant substituting for Pb increases the likelihood of the formation of oxygen vacancies on the anion site. We propose a new possible phase in this system, Pb$_8$Cu$_2$(PO$_4$)$_6$, where two monovalent Cu atoms are substituted for two Pb(1) atoms and the anion oxygen is removed. We also propose several reaction pathways for Pb$_9$Cu(PO$_4$)$_6$O and Pb$_8$Cu$_2$(PO$_4$)$_6$, and found that both of these two structures are likely to be synthesized under a 1:1 ratio of reactants Pb$_2$SO$_5$ and Cu$_3$P. Our work provides a thorough foundation for the thermodynamic and dynamic stabilities of LK-99 related compounds and we propose several possible novel synthesis reaction pathways and a new predicted structure for future studies.
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Submitted 14 August, 2023;
originally announced August 2023.
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Coherent Dynamics of Charge Carriers in γ-InSe Revealed by Ultrafast Spectroscopy
Authors:
Jianwei Shen,
Jiayu Liang,
Qixu Zhao,
Menghui Jia,
Jinquan Chen,
Haitao Sun,
Qinghong Yuan,
Hong-Guang Duan,
Ajay Jha,
Yan Yang,
Zhenrong Sun
Abstract:
For highly efficient ultrathin solar cells, layered indium selenide (InSe), a van der Waals solid, has shown a great promise. In this paper, we study the coherent dynamics of charge carriers generation in γ-InSe single crystals. We employ ultrafast transient absorption spectroscopy to examine the dynamics of hot electrons after resonant photoexcitation. To study the effect of excess kinetic energy…
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For highly efficient ultrathin solar cells, layered indium selenide (InSe), a van der Waals solid, has shown a great promise. In this paper, we study the coherent dynamics of charge carriers generation in γ-InSe single crystals. We employ ultrafast transient absorption spectroscopy to examine the dynamics of hot electrons after resonant photoexcitation. To study the effect of excess kinetic energy of electrons after creating A exciton (VB1 to CB transition), we excite the sample with broadband pulses centered at 600, 650, 700 and 750 nm, respectively. We analyze the relaxation and recombination dynamics in γ-InSe by global fitting approach. Five decay associated spectra with their associated lifetimes are obtained, which have been assigned to intraband vibrational relaxation and interband recombination processes. We extract characteristic carrier thermalization times from 1 to 10 ps. To examine the coherent vibrations accompanying intraband relaxation dynamics, we analyze the kinetics by fitting to exponential functions and the obtained residuals are further processed for vibrational analysis. A few key phonon coherences are resolved and ab-initio quantum calculations reveal the nature of the associated phonons. The wavelet analysis is employed to study the time evolution of the observed coherences, which show that the low-frequency coherences last for more than 5 ps. Associated calculations reveal that the contribution of the intralayer phonon modes is the key determining factor for the scattering between free electrons and lattice. Our results provide fundamental insights into the photophysics in InSe and help to unravel their potential for high-performance optoelectronic devices.
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Submitted 24 July, 2023;
originally announced July 2023.
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Direct observation of chiral edge current at zero magnetic field in odd-layer MnBi$_2$Te$_4$
Authors:
Jinjiang Zhu,
Yang Feng,
Xiaodong Zhou,
Yongchao Wang,
Zichen Lian,
Weiyan Lin,
Qiushi He,
Yishi Lin,
Youfang Wang,
Hongxu Yao,
Hao Li,
Yang Wu,
Jing Wang,
Jian Shen,
Jinsong Zhang,
Yayu Wang,
Yihua Wang
Abstract:
The chiral edge current is the boundary manifestation of the Chern number of a quantum anomalous Hall (QAH) insulator. Its direct observation is assumed to require well-quantized Hall conductance, and is so far lacking. The recently discovered van der Waals antiferromagnet MnBi$_2$Te$_4$ is theorized as a QAH in odd-layers but has shown Hall resistivity below the quantization value at zero magneti…
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The chiral edge current is the boundary manifestation of the Chern number of a quantum anomalous Hall (QAH) insulator. Its direct observation is assumed to require well-quantized Hall conductance, and is so far lacking. The recently discovered van der Waals antiferromagnet MnBi$_2$Te$_4$ is theorized as a QAH in odd-layers but has shown Hall resistivity below the quantization value at zero magnetic field. Here, we perform scanning superconducting quantum interference device (sSQUID) microscopy on these seemingly failed QAH insulators to image their current distribution. When gated to the charge neutral point, our device exhibits edge current, which flows unidirectionally on the odd-layer boundary both with vacuum and with the even-layer. The chirality of such edge current reverses with the magnetization of the bulk. Surprisingly, we find the edge channels coexist with finite bulk conduction even though the bulk chemical potential is in the band gap, suggesting their robustness under significant edge-bulk scattering. Our result establishes the existence of chiral edge currents in a topological antiferromagnet and offers an alternative for identifying QAH states.
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Submitted 19 July, 2023;
originally announced July 2023.
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A Versatile Method of Engineering the Electron Wavefunction of Hybrid Quantum Devices
Authors:
Guoan Li,
Guang Yang,
Ting Lin,
M. Rossi,
G. Badawy,
Zhiyuan Zhang,
Xiaofan Shi,
Jiayu Shi,
Degui Qian,
Fang Lu,
Lin Gu,
An-Qi Wang,
Zhaozheng Lyu,
Guangtong Liu,
Fanming Qu,
Ziwei Dou,
Qinghua Zhang,
E. P. A. M. Bakkers,
M. P. Nowak,
P. Wójcik,
Li Lu,
Jie Shen
Abstract:
With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the properties of both materials. However, until now, none of the experiments have reported good control of band alignment at the interface, which determines the stren…
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With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the properties of both materials. However, until now, none of the experiments have reported good control of band alignment at the interface, which determines the strength of S-Sm coupling and the proximitized superconducting gap. Here, we fabricate hybrid devices in a generic way with argon milling to modify the interface while maintaining its high quality. First, after the milling the atomically connected S-Sm interfaces appear, resulting in a large induced gap, as well as the ballistic transport revealed by the multiple Andreev reflections and quantized above-gap conductance plateaus. Second, by comparing transport measurement with Schrödinger-Poisson (SP) calculations, we demonstrate that argon milling is capable of varying the band bending strength in the semiconducting wire as the electrons tend to accumulate on the etched surface for longer milling time. Finally, we perform nonlocal measurements on advanced devices to demonstrate the coexistence and tunability of crossed Andreev reflection (CAR) and elastic co-tunneling (ECT) -- key ingredients for building the prototype setup for realization of Kitaev chain and quantum entanglement probing. Such a versatile method, compatible with the standard fabrication process and accompanied by the well-controlled modification of the interface, will definitely boost the creation of more sophisticated hybrid devices for exploring physics in solid-state systems.
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Submitted 13 July, 2023;
originally announced July 2023.
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A unique van Hove singularity in kagome superconductor CsV$_{3-x}$Ta$_x$Sb$_5$ with enhanced superconductivity
Authors:
Yang Luo,
Yulei Han,
Jinjin Liu,
Hui Chen,
Zihao Huang,
Linwei Huai,
Hongyu Li,
Bingqian Wang,
Jianchang Shen,
Shuhan Ding,
Zeyu Li,
Shuting Peng,
Zhiyuan Wei,
Yu Miao,
Xiupeng Sun,
Zhipeng Ou,
Ziji Xiang,
Makoto Hashimoto,
Donghui Lu,
Yugui Yao,
Haitao Yang,
Xianhui Chen,
Hong-Jun Gao,
Zhenhua Qiao,
Zhiwei Wang
, et al. (1 additional authors not shown)
Abstract:
Van Hove singularity (VHS) has been considered as a driving source for unconventional superconductivity. A VHS in two-dimensional (2D) materials consists of a saddle point connecting electron-like and hole-like bands. In a rare case, when a VHS appears at Fermi level, both electron-like and hole-like conduction can coexist, giving rise to an enhanced density of states as well as an attractive comp…
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Van Hove singularity (VHS) has been considered as a driving source for unconventional superconductivity. A VHS in two-dimensional (2D) materials consists of a saddle point connecting electron-like and hole-like bands. In a rare case, when a VHS appears at Fermi level, both electron-like and hole-like conduction can coexist, giving rise to an enhanced density of states as well as an attractive component of Coulomb interaction for unconventional electronic pairing. However, this van Hove scenario is often destroyed by an incorrect chemical potential or competing instabilities. Here, by using angle-resolved photoemission measurements, we report the observation of a VHS perfectly aligned with the Fermi level in a kagome superconductor CsV$_{3-x}$Ta$_x$Sb$_5$ (x~0.4), in which a record-high superconducting transition temperature is achieved among all the current variants of AV$_3$Sb$_5$ (A=Cs, Rb, K) at ambient pressure. Doping dependent measurements reveal the important role of van Hove scenario in boosting superconductivity, and spectroscopic-imaging scanning tunneling microscopy measurements indicate a distinct superconducting state in this system.
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Submitted 3 July, 2023;
originally announced July 2023.
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On relation between renormalized frequency and heat capacity for particles in an anharmonic potential
Authors:
Y. T. Liu,
Y. H. Zhao,
Y. Zhong,
J. M. Shen,
J. H. Zhang,
Q. H. Liu
Abstract:
For free particles in a simple harmonic potential plus a weak anharmonicity, characterized by a set of anharmonic parameters, Newtonian mechanics asserts that there is a renormalization of the natural frequency of the periodic motion; and statistical mechanics claims that the anharmonicity causes a correction to the heat capacity of an ideal gas in the anharmonic potential. The orbital motion and…
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For free particles in a simple harmonic potential plus a weak anharmonicity, characterized by a set of anharmonic parameters, Newtonian mechanics asserts that there is a renormalization of the natural frequency of the periodic motion; and statistical mechanics claims that the anharmonicity causes a correction to the heat capacity of an ideal gas in the anharmonic potential. The orbital motion and thermal motion depend on the same anharmonic parameters, but in different combinations. These two manners of combinations are fundamentally different, demonstrating that statistical law can not emerge from the many-body limit of deterministic law for one-body.
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Submitted 1 July, 2023;
originally announced July 2023.
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Observation of first-order quantum phase transitions and ferromagnetism in twisted double bilayer graphene
Authors:
Le Liu,
Xin Lu,
Yanbang Chu,
Guang Yang,
Yalong Yuan,
Fanfan Wu,
Yiru Ji,
Jinpeng Tian,
Kenji Watanabe,
Takashi Taniguchi,
Luojun Du,
Dongxia Shi,
Jianpeng Liu,
Jie Shen,
Li Lu,
Wei Yang,
Guangyu Zhang
Abstract:
Twisted graphene multilayers are highly tunable flatband systems for developing new phases of matter. Thus far, while orbital ferromagnetism has been observed in valley polarized phases, the long-range orders of other correlated phases as well as the quantum phase transitions between different orders mostly remain unknown. Here, we report an observation of Coulomb interaction driven first-order qu…
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Twisted graphene multilayers are highly tunable flatband systems for developing new phases of matter. Thus far, while orbital ferromagnetism has been observed in valley polarized phases, the long-range orders of other correlated phases as well as the quantum phase transitions between different orders mostly remain unknown. Here, we report an observation of Coulomb interaction driven first-order quantum phase transitions and ferromagnetism in twisted double bilayer graphene (TDBG). At zero magnetic field, the transitions are revealed in a series of step-like abrupt resistance jumps with prominent hysteresis loop when either the displacement field (D) or the carrier density (n) is tuned across symmetry-breaking boundary near half filling, indicating a formation of ordered domains. It is worth noting that the good turnability and switching of these states gives a rise to a memory performance with a large on/off ratio. Moreover, when both spin and valley play the roles at finite magnetic field, we observe abundant first-order quantum phase transitions among normal metallic states from charge neutral point, orbital ferromagnetic states from quarter filling, and spin-polarized states from half filling. We interpret these first-order phase transitions in the picture of phase separations and spin domain percolations driven by multi-field tunable Coulomb interactions, in agreement with Lifshitz transition from Hartree-Fock calculations. The observed multi-filed tunable domain structure and its hysteresis resembles the characteristics of multiferroics, revealing intriguing magnetoelectric properties. Our result enriches the correlated phase diagram in TDBG for discovering novel exotic phases and quantum phase transitions, and it would benefit other twisted moiré systems as well.
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Submitted 24 June, 2023;
originally announced June 2023.
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Interfering Josephson diode effect and magnetochiral anisotropy in Ta2Pd3Te5 asymmetric edge interferometer
Authors:
Yupeng Li,
Dayu Yan,
Yu Hong,
Haohao Sheng,
Anqi Wang,
Ziwei Dou,
Xingchen Guo,
Xiaofan Shi,
Zikang Su,
Zhaozheng Lyu,
Tian Qian,
Guangtong Liu,
Fanming Qu,
Kun Jiang,
Zhijun Wang,
Youguo Shi,
Zhu-An Xu,
Jiangping Hu,
Li Lu,
Jie Shen
Abstract:
Edge states in topological systems have attracted great interest due to their robustness and linear dispersions. Here a superconducting-proximitized edge interferometer is engineered on a topological insulator Ta2Pd3Te5 with asymmetric edges to realize the interfering Josephson diode effect (JDE), which hosts many advantages, such as the high efficiency as much as 73% at tiny applied magnetic fiel…
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Edge states in topological systems have attracted great interest due to their robustness and linear dispersions. Here a superconducting-proximitized edge interferometer is engineered on a topological insulator Ta2Pd3Te5 with asymmetric edges to realize the interfering Josephson diode effect (JDE), which hosts many advantages, such as the high efficiency as much as 73% at tiny applied magnetic fields with an ultra-low switching power around picowatt, and a giant interfering magnetochiral anisotropy with a maximal coefficient gamma = 1.2 x 10^{9} T^{-1}A^{-1}. As an important element to induce such JDE, the second-order harmonic in the current-phase relation is also experimentally confirmed by half-integer Shapiro steps. This edge interferometer offers a novel and effective method to enhance the overall performance of JDE and magnetochiral anisotropy, and boosts great potential applications for future superconducting quantum devices.
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Submitted 2 June, 2024; v1 submitted 14 June, 2023;
originally announced June 2023.
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Calculation of Special Spin Behavior of Dy3+ in DyFe1-xCrxO3 System by Molecular Field Model
Authors:
Kaiyang Gao,
Kexuan Zhou,
Jiyu Shen,
Zeyi Lu,
Chenying Gong,
Zhongjin Wu,
Ke Shi,
Jing Guo,
Zhaoyi Wang,
Min Liu
Abstract:
In this study, the sol-gel method synthesized the magnetic measurement and analysis of single-phase polycrystalline perovskite DyFe1-xCrxO3 (DFCO). The experimental data were fitted and calculated by a four-sublattice molecular field model. Unlike previous studies, we found that in DyFe1-xCrxO3, the spin of the A-site rare earth ion Dy3+ also changed simultaneously with the spin reorientation of t…
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In this study, the sol-gel method synthesized the magnetic measurement and analysis of single-phase polycrystalline perovskite DyFe1-xCrxO3 (DFCO). The experimental data were fitted and calculated by a four-sublattice molecular field model. Unlike previous studies, we found that in DyFe1-xCrxO3, the spin of the A-site rare earth ion Dy3+ also changed simultaneously with the spin reorientation of the Fe3+/Cr3+ ions. The effective spin is defined as the projection of the A site's total spin on the B site's spin plane, and the curve of temperature changes is obtained after fitting. With this theory, a very accurate thermomagnetic curve is obtained by fitting. This is convincing and, at the same time, provides a reference for the development of spintronic devices in the future.
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Submitted 27 May, 2023;
originally announced June 2023.
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The Effect of Ionic Spin on Multiferroic of Orthorhombic Perovskite
Authors:
Kaiyang Gao,
Jiyu Shen,
Zeyi Lu,
Jiajun Mo,
Guoqing Liu,
Zhongjin Wu,
Chenying Gong,
Dong Xie,
Yanfang Xia,
Min Liu
Abstract:
To investigate the influence of ion spin on the coupling between ferromagnetism and ferroelectricity in type II multiferroic perovskite, we prepared the multiferroic perovskite Er0.9La0.1Cr0.8Fe0.2O3 (ELCFO) using the sol-gel method, and explored the macroscopic magnetic properties of ELCFO through Mössbauer spectrum and magnetic testing. The thermal magnetic curve was analyzed to examine the stat…
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To investigate the influence of ion spin on the coupling between ferromagnetism and ferroelectricity in type II multiferroic perovskite, we prepared the multiferroic perovskite Er0.9La0.1Cr0.8Fe0.2O3 (ELCFO) using the sol-gel method, and explored the macroscopic magnetic properties of ELCFO through Mössbauer spectrum and magnetic testing. The thermal magnetic curve was analyzed to examine the state and change of each ionic spin in the ELCFO system at different temperature ranges, and the role of ionic spin in the coupling between ferromagnetism and ferroelectricity was investigated. This study provides a theoretical basis for further research on multiferroic perovskites and has practical implications.
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Submitted 27 May, 2023;
originally announced June 2023.
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Accelerated Screening of Ternary Chalcogenides for High-Performance Optoelectronic Materials
Authors:
Chen Shen,
Tianshu Li,
Yixuan Zhang,
Teng Long,
Nuno Miguel Fortunato,
Fei Liang,
Mian Dai,
Jiahong Shen,
Chris Wolverton,
Hongbin Zhang
Abstract:
Chalcogenides, which refer to chalcogen anions, have attracted considerable attention in multiple fields of applications, such as optoelectronics, thermoelectrics, transparent contacts, and thin film transistors. In comparison to oxide counterparts, chalcogenides have demonstrated higher mobility and \textit{p}-type dopability, owing to larger orbital overlaps between metal-X covalent chemical bon…
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Chalcogenides, which refer to chalcogen anions, have attracted considerable attention in multiple fields of applications, such as optoelectronics, thermoelectrics, transparent contacts, and thin film transistors. In comparison to oxide counterparts, chalcogenides have demonstrated higher mobility and \textit{p}-type dopability, owing to larger orbital overlaps between metal-X covalent chemical bondings and higher-energy valence bands derived by p-orbitals. Despite the potential of chalcogenides, the number of successfully synthesized compounds remains relatively low compared to oxides, suggesting the presence of numerous unexplored chalcogenides with fascinating physical characteristics. In this study, we implemented a systematic high-throughput screening process combined with first-principles calculations on ternary chalcogenides using 34 crystal structure prototypes. We generated a computational material database containing over 400,000 compounds by exploiting the ion-substitution approach at different atomic sites with elements in the periodic table. The thermodynamic stabilities of the candidates were validated using the chalcogenides included in the Open Quantum Materials Database. Moreover, we trained a model based on Crystal Graph Convolutional Neural Networks to predict the thermodynamic stability of novel materials. Furthermore, we theoretically evaluated the electronic structures of the stable candidates using accurate hybrid functionals. A series of in-depth characteristics, including the carrier effective masses, electronic configuration, and photovoltaic conversion efficiency, was also investigated. Our work provides useful guidance for further experimental research in the synthesis and characterization of such chalcogenides as promising candidates, as well as charting the stability and optoelectronic performance of ternary chalcogenides.
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Submitted 4 May, 2023;
originally announced May 2023.
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Designing transparent conductors using forbidden optical transitions
Authors:
Rachel Woods-Robinson,
Yihuang Xiong,
Jimmy-Xuan Shen,
Nicholas Winner,
Matthew K. Horton,
Mark Asta,
Alex M. Ganose,
Geoffroy Hautier,
Kristin A. Persson
Abstract:
Many semiconductors present weak or forbidden transitions at their fundamental band gaps, inducing a widened region of transparency. This occurs in high-performing n-type transparent conductors (TCs) such as Sn-doped In2O3 (ITO), however thus far the presence of forbidden transitions has been neglected in searches for new p-type TCs. To address this, we first compute high-throughput absorption spe…
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Many semiconductors present weak or forbidden transitions at their fundamental band gaps, inducing a widened region of transparency. This occurs in high-performing n-type transparent conductors (TCs) such as Sn-doped In2O3 (ITO), however thus far the presence of forbidden transitions has been neglected in searches for new p-type TCs. To address this, we first compute high-throughput absorption spectra across ~18,000 semiconductors, showing that over half exhibit forbidden or weak optical transitions at their band edges. Next, we demonstrate that compounds with highly localized band edge states are more likely to present forbidden transitions. Lastly, we search this set for p-type and n-type TCs with forbidden or weak transitions. Defect calculations yield unexplored TC candidates such as ambipolar BeSiP2, Zr2SN2 and KSe, p-type BAs, Au2S, and AuCl, and n-type Ba2InGaO5, GaSbO4, and KSbO3, among others. We share our data set via the MPContribs platform, and we recommend that future screenings for optical properties use metrics representative of absorption features rather than band gap alone.
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Submitted 9 April, 2023; v1 submitted 29 March, 2023;
originally announced March 2023.
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Creation of nano-skyrmion lattice in Fe/Ir(111) system using voltage pulse
Authors:
Yulong Yang,
Mingming Shuai,
Haiming Huang,
Rui Song,
Yi Zhu,
Yanghui Liao,
Yinyan Zhu,
Xiaodong Zhou,
Lifeng Yin,
Jian Shen
Abstract:
Magnetic ultrathin films grown on heavy metal substrates often exhibit rich spin structures due to the competition between various magnetic interactions such as Heisenberg exchange, Dzyaloshinskii-Moriya interaction and higher-order spin interactions. Here we employ spin-polarized scanning tunneling microscopy to study magnetic nano-skyrmion phase in Fe monolayer grown on Ir(111) substrate. Our ob…
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Magnetic ultrathin films grown on heavy metal substrates often exhibit rich spin structures due to the competition between various magnetic interactions such as Heisenberg exchange, Dzyaloshinskii-Moriya interaction and higher-order spin interactions. Here we employ spin-polarized scanning tunneling microscopy to study magnetic nano-skyrmion phase in Fe monolayer grown on Ir(111) substrate. Our observations show that the formation of nano-skyrmion lattice in the Fe/Ir(111) system depends sensitively on the growth conditions and various non-skyrmion spin states can be formed. Remarkably, the application of voltage pulses between the tip and the sample can trigger a non-skyrmion to skyrmion phase transition. The fact that nano-skyrmions can be created using voltage pulse indicates that the balance between the competing magnetic interactions can be affected by an external electric field, which is highly useful to design skyrmion-based spintronic devices with low energy consumption.
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Submitted 14 March, 2023;
originally announced March 2023.
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Diamond-shaped evolution of the superconducting interference pattern in NbTiN weak-link Josephson junctions
Authors:
Kui Zhao,
Huaiyuan Liu,
Jianfei Xiao,
Linfeng Tu,
Jiangbo He,
Mingli Liu,
Ruiyang Jiang,
Zhongmou Jia,
Shang Zhu,
Yunteng Shi,
Yiwen Ma,
Zhaozheng Lyu,
Jie Shen,
Guangtong Liu,
Li Lu,
Fanming Qu
Abstract:
Introducing an in-plane magnetic field into Josephson junctions is of fundamental significance in exploring a variety of interesting physical phenomena. However, extra care must be paid in realistic experiments involving an in-plane magnetic field, because trivial orbital effect due to, e.g., rippled structures can inevitably be introduced, which could produce false effect confusing the expected p…
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Introducing an in-plane magnetic field into Josephson junctions is of fundamental significance in exploring a variety of interesting physical phenomena. However, extra care must be paid in realistic experiments involving an in-plane magnetic field, because trivial orbital effect due to, e.g., rippled structures can inevitably be introduced, which could produce false effect confusing the expected physical phenomena. In this work, we report a diamond-shaped evolution of the critical supercurrent in an in-plane magnetic field in NbTiN weak-link Josephson junctions. Upon application of an in-plane magnetic field perpendicular to the current, the superconducting interference pattern exhibits a characteristic evolution, which manifests as a diamond block diagram featured with each node opened and stretched out in a V-shape, mimicking the suppression-recovery patterns of critical supercurrent related to the Zeeman-driven 0-pi transition. However, the effect of Zeeman splitting plays a negligible role due to the relatively small magnetic field involved in our experiment. Therefore, we explore the trivial orbital effect of rippled structures and further take into account non-uniform current distributions pertaining in our junctions. We find that the ripples in combination with specific current distributions can give rise to a similar evolution pattern as the experimental observations. Our results serve as a caution that the combined effect of rippled structures and non-homogeneous current distributions should be taken seriously for experiments subjected by in-plane magnetic fields.
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Submitted 10 March, 2023;
originally announced March 2023.
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Magnetic field filtering of the hinge supercurrent in unconventional metal NiTe$_2$-based Josephson junctions
Authors:
Tian Le,
Ruihan Zhang,
Changcun Li,
Ruiyang Jiang,
Haohao Sheng,
Linfeng Tu,
Xuewei Cao,
Zhaozheng Lyu,
Jie Shen,
Guangtong Liu,
Fucai Liu,
Zhijun Wang,
Li Lu,
Fanming Qu
Abstract:
Topological materials with boundary (surface/edge/hinge) states have attracted tremendous research interest. Besides, unconventional (obstructed atomic) materials have recently drawn lots of attention owing to their obstructed boundary states. Experimentally, Josephson junctions (JJs) constructed on materials with boundary states produce the peculiar boundary supercurrent, which was utilized as a…
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Topological materials with boundary (surface/edge/hinge) states have attracted tremendous research interest. Besides, unconventional (obstructed atomic) materials have recently drawn lots of attention owing to their obstructed boundary states. Experimentally, Josephson junctions (JJs) constructed on materials with boundary states produce the peculiar boundary supercurrent, which was utilized as a powerful diagnostic approach. Here, we report the observations of conspicuous hinge supercurrent in NiTe$_2$-based JJs. Particularly, applying an in-plane magnetic field along the Josephson current could rapidly suppress the bulk supercurrent and retain the nearly pure hinge supercurrent, namely the magnetic field filtering of supercurrent. Further systematic comparative analysis and theoretical calculations demonstrate the existence of unconventional nature and obstructed hinge states in NiTe$_2$. Our results revealed the unique hinge states in unconventional metal NiTe$_2$, and demonstrated in-plane magnetic field as an efficient method to filter out the futile bulk contributions and thereby to highlight the hinge states hidden in topological/unconventional materials.
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Submitted 9 March, 2023;
originally announced March 2023.
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Electrical and thermal transport properties of kagome metals $A$Ti$_3$Bi$_5$ ($A$ = Rb, Cs)
Authors:
Xintong Chen,
Xiangqi Liu,
Wei Xia,
Xinrun Mi,
Luyao Zhong,
Kunya Yang,
Long Zhang,
Yuhan Gan,
Yan Liu,
Guiwen Wang,
Aifeng Wang,
Yisheng Chai,
Junying Shen,
Xiaolong Yang,
Yanfeng Guo,
Mingquan He
Abstract:
We report electrical and thermal transport properties of single crystalline kagome metals $A$Ti$_3$Bi$_5$ ($A$ = Rb, Cs). Different from the structural similar kagome superconductors $A$V$_3$Sb$_5$, no charge density wave instabilities are found in $A$Ti$_3$Bi$_5$. At low temperatures below 5 K, signatures of superconductivity appear in $A$Ti$_3$Bi$_5$ as seen in magnetization measurements. Howeve…
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We report electrical and thermal transport properties of single crystalline kagome metals $A$Ti$_3$Bi$_5$ ($A$ = Rb, Cs). Different from the structural similar kagome superconductors $A$V$_3$Sb$_5$, no charge density wave instabilities are found in $A$Ti$_3$Bi$_5$. At low temperatures below 5 K, signatures of superconductivity appear in $A$Ti$_3$Bi$_5$ as seen in magnetization measurements. However, bulk superconductivity is not evidenced by specific heat results. Similar to $A$V$_3$Sb$_5$, $A$Ti$_3$Bi$_5$ show nonlinear magnetic field dependence of the Hall effect below about 70 K, pointing to a multiband nature. Unlike $A$V$_3$Sb$_5$ in which phonons and electron-phonon coupling play important roles in thermal transport, the thermal conductivity in $A$Ti$_3$Bi$_5$ is dominated by electronic contributions. Moreover, our calculated electronic structure suggests that van Hove singularities are sitting well above the Fermi energy. Compared with $A$V$_3$Sb$_5$, the absence of charge orders in $A$Ti$_3$Bi$_5$ is closely associated with minor contributions from electron-phonon coupling and/or van Hove singularities.
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Submitted 26 April, 2023; v1 submitted 7 March, 2023;
originally announced March 2023.
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Quantifying quantum coherence of multiple-charge states in tunable Josephson junctions
Authors:
Jiangbo He,
Dong Pan,
Mingli Liu,
Zhaozheng Lyu,
Zhongmou Jia,
Guang Yang,
Shang Zhu,
Guangtong Liu,
Jie Shen,
Sergey N. Shevchenko,
Franco Nori,
Jianhua Zhao,
Li Lu,
Fanming Qu
Abstract:
Coherence and tunneling play central roles in quantum phenomena. In a tunneling event, the time that a particle spends inside the barrier has been fiercely debated. This problem becomes more complex when tunneling repeatedly occurs back and forth, and when involving many particles. Here we report the measurement of the coherence time of various charge states tunneling in a nanowire-based tunable J…
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Coherence and tunneling play central roles in quantum phenomena. In a tunneling event, the time that a particle spends inside the barrier has been fiercely debated. This problem becomes more complex when tunneling repeatedly occurs back and forth, and when involving many particles. Here we report the measurement of the coherence time of various charge states tunneling in a nanowire-based tunable Josephson junction; including single charges, multiple charges, and Cooper pairs. We studied all the charge tunneling processes using Landau-Zener-Stückelberg-Majorana (LZSM) interferometry, and observed high-quality interference patterns. In particular, the coherence time of the charge states was extracted from the interference fringes in Fourier space. In addition, our measurements show the break-up of Cooper pairs, from a macroscopic quantum coherent state to individual particle states. Besides the fundamental research interest, our results also establish LZSM interferometry as a powerful technique to explore the coherence time of charges in hybrid devices.
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Submitted 5 March, 2023;
originally announced March 2023.
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Gate-tunable negative differential conductance in hybrid semiconductor-superconductor devices
Authors:
Mingli Liu,
Dong Pan,
Tian Le,
Jiangbo He,
Zhongmou Jia,
Shang Zhu,
Guang Yang,
Zhaozheng Lyu,
Guangtong Liu,
Jie Shen,
Jianhua Zhao,
Li Lu,
Fanming Qu
Abstract:
Negative differential conductance (NDC) manifests as a significant characteristic of various underlying physics and transport processes in hybrid superconducting devices. In this work, we report the observation of gate-tunable NDC outside the superconducting energy gap on two types of hybrid semiconductor-superconductor devices, i.e., normal metal-superconducting nanowire-normal metal and normal m…
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Negative differential conductance (NDC) manifests as a significant characteristic of various underlying physics and transport processes in hybrid superconducting devices. In this work, we report the observation of gate-tunable NDC outside the superconducting energy gap on two types of hybrid semiconductor-superconductor devices, i.e., normal metal-superconducting nanowire-normal metal and normal metal-superconducting nanowire-superconductor devices. Specifically, we study the dependence of the NDCs on back-gate voltage and magnetic field. When the back-gate voltage decreases, these NDCs weaken and evolve into positive differential conductance dips; and meanwhile they move away from the superconducting gap towards high bias voltage, and disappear eventually. In addition, with the increase of magnetic field, the NDCs/dips follow the evolution of the superconducting gap, and disappear when the gap closes. We interpret these observations and reach a good agreement by combining the Blonder-Tinkham-Klapwijk (BTK) model and the critical supercurrent effect in the nanowire, which we call the BTK-supercurrent model. Our results provide an in-depth understanding of the tunneling transport in hybrid semiconductor-superconductor devices.
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Submitted 28 February, 2023;
originally announced March 2023.
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Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$
Authors:
Chen Ran,
Xinrun Mi,
Junying Shen,
Honghui Wang,
Kunya Yang,
Yan Liu,
Guiwen Wang,
Guoyu Wang,
Youguo Shi,
Aifeng Wang,
Yisheng Chai,
Xiaolong Yang,
Mingquan He,
Xin Tong,
Xiaoyuan Zhou
Abstract:
In the ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$, colossal magnetoresistance (CMR) arises below $T_\mathrm{c}=78$ K due to the interplay of magnetism and topological nodal-line fermiology. The Berry curvature associated with the topological nodal-line is expected to produce an anomalous Nernst effect. Here, we present sizable anomalous Nernst signal in Mn$_3$Si$_2$Te$_6$ below…
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In the ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$, colossal magnetoresistance (CMR) arises below $T_\mathrm{c}=78$ K due to the interplay of magnetism and topological nodal-line fermiology. The Berry curvature associated with the topological nodal-line is expected to produce an anomalous Nernst effect. Here, we present sizable anomalous Nernst signal in Mn$_3$Si$_2$Te$_6$ below $T_\mathrm{c}$. In the low-magnetic-field region where CMR is most apparent, the scaling ratio between the Nernst signal and magnetization is significantly enhanced compared to that in conventional magnetic materials. The enhanced Nernst effect and CMR likely share the same mechanisms, which are closely linked to the nodal-line topology.
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Submitted 27 February, 2023;
originally announced February 2023.
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The influence of adatom diffusion on the formation of skyrmion lattice in sub-monolayer Fe on Ir(111)
Authors:
Mingming Shuai,
Yulong Yang,
Haiming Huang,
Rui Song,
Yi Zhu,
Yanghui Liao,
Yinyan Zhu,
Xiaodong Zhou,
Lifeng Yin,
Jian Shen
Abstract:
Room temperature grown Fe monolayer (ML) on the Ir(111) single crystal substrate has attracted great research interests as nano-skyrmion lattice can form under proper growth conditions. The formation of the nanoscale skyrmion, however, appears to be greatly affected by the diffusion length of the Fe adatoms on the Ir(111) surface. We made this observation by employing spin-polarized scanning tunne…
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Room temperature grown Fe monolayer (ML) on the Ir(111) single crystal substrate has attracted great research interests as nano-skyrmion lattice can form under proper growth conditions. The formation of the nanoscale skyrmion, however, appears to be greatly affected by the diffusion length of the Fe adatoms on the Ir(111) surface. We made this observation by employing spin-polarized scanning tunneling microscopy to study skyrmion formation upon systematically changing the impurity density on the substrate surface prior to Fe deposition. Since the substrate surface impurities serve as pinning centers for Fe adatoms, the eventual size and shape of the Fe islands exhibit a direct correlation with the impurity density, which in turn determines whether skyrmion can be formed. Our observation indicates that skyrmion only forms when the impurity density is below 0.006/nm2, i.e., 12 nm averaged spacing between the neighboring defects. We verify the significance of Fe diffusion length by growing Fe on clean Ir(111) substrate at low temperature of 30 K, where no skyrmion was observed to form. Our findings signify the importance of diffusion of Fe atoms on the Ir(111) substrate, which affects the size, shape and lattice perfection of the Fe islands and thus the formation of skyrmion lattice.
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Submitted 10 April, 2023; v1 submitted 22 February, 2023;
originally announced February 2023.
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Inverse-current quantum electro-oscillations in a charge-density wave insulator
Authors:
Tian Le,
Ruiyang Jiang,
Linfeng Tu,
Renji Bian,
Yiwen Ma,
Yunteng Shi,
Ke Jia,
Zhilin Li,
Zhaozheng Lyu,
Xuewei Cao,
Jie Shen,
Guangtong Liu,
Youguo Shi,
Fucai Liu,
Yi Zhou,
Li Lu,
Fanming Qu
Abstract:
Quantum magneto-oscillations have long been a vital subject in condensed matter physics, with ubiquitous quantum phenomena and diverse underlying physical mechanisms. Here, we demonstrate the intrinsic and reproducible DC-current-driven quantum electro-oscillations with a periodicity in the inverse of the current (1/I), in quasi-one-dimensional charge-density-wave (CDW) insulators (TaSe$_4$)$_2$I…
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Quantum magneto-oscillations have long been a vital subject in condensed matter physics, with ubiquitous quantum phenomena and diverse underlying physical mechanisms. Here, we demonstrate the intrinsic and reproducible DC-current-driven quantum electro-oscillations with a periodicity in the inverse of the current (1/I), in quasi-one-dimensional charge-density-wave (CDW) insulators (TaSe$_4$)$_2$I and TaS$_3$ nanowires. Such oscillations manifest in the nearly infinite Fröhlich conductivity region where the undamped CDW flow forms in a finite electric current, and finally disappear after the oscillation index n reaches 1. A systematic investigation on the effect of temperature and magnetic field establishes that the observed electro-oscillations are a coherent quantum phenomenon. We discuss the possibilities of the physical mechanisms, including the formation of sliding-driven inherent Floquet sidebands. Our results introduce a new member in the family of quantum oscillations, and shed light on plausible avenues to explore novel physics and potential applications of coherent density-wave condensates.
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Submitted 19 June, 2024; v1 submitted 16 February, 2023;
originally announced February 2023.