Showing 1–6 of 6 results for author: McFadden, A

Formation and Microwave Losses of Hydrides in Superconducting Niobium Thin Films Resulting from Fluoride Chemical Processing

Authors: Carlos G. Torres-Castanedo, Dominic P. Goronzy, Thang Pham, Anthony McFadden, Nicholas Materise, Paul Masih Das, Matthew Cheng, Dmitry Lebedev, Stephanie M. Ribet, Mitchell J. Walker, David A. Garcia-Wetten, Cameron J. Kopas, Jayss Marshall, Ella Lachman, Nikolay Zhelev, James A. Sauls, Joshua Y. Mutus, Corey Rae H. McRae, Vinayak P. Dravid, Michael J. Bedzyk, Mark C. Hersam

Abstract: Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potenti… ▽ More Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potentially negatively impacting microwave loss performance. Here, we present comprehensive materials characterization of Nb hydrides formed in Nb thin films as a function of fluoride chemical treatments. In particular, secondary-ion mass spectrometry, X-ray scattering, and transmission electron microscopy reveal the spatial distribution and phase transformation of Nb hydrides. The rate of hydride formation is determined by the fluoride solution acidity and the etch rate of Nb2O5, which acts as a diffusion barrier for hydrogen into Nb. The resulting Nb hydrides are detrimental to Nb superconducting properties and lead to increased power-independent microwave loss in coplanar waveguide resonators. However, Nb hydrides do not correlate with two-level system loss or device aging mechanisms. Overall, this work provides insight into the formation of Nb hydrides and their role in microwave loss, thus guiding ongoing efforts to maximize coherence time in superconducting quantum devices. △ Less

Submitted 5 April, 2024; originally announced April 2024.

TOF-SIMS Analysis of Decoherence Sources in Nb Superconducting Resonators

Authors: Akshay A. Murthy, Jae-Yel Lee, Cameron Kopas, Matthew J. Reagor, Anthony P. McFadden, David P. Pappas, Mattia Checchin, Anna Grassellino, Alexander Romanenko

Abstract: Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of $μみゅー$s, material quality and interfacial structures continue to curb device performance. When niobium is deploye… ▽ More Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of $μみゅー$s, material quality and interfacial structures continue to curb device performance. When niobium is deployed as the superconducting material, two-level system defects in the thin film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry (TOF-SIMS) to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated by Rigetti Computing and at the National Institute of Standards and Technology through slight variations in the processing and vacuum conditions. We find that when Nb film is sputtered onto the Si substrate, oxide and silicide regions are generated at various interfaces. We also observe that impurity species such as niobium hydrides and carbides are incorporated within the niobium layer during the subsequent lithographic patterning steps. The formation of these resistive compounds likely impact the superconducting properties of the Nb thin film. Additionally, we observe the presence of halogen species distributed throughout the patterned thin films. We conclude by hypothesizing the source of such impurities in these structures in an effort to intelligently fabricate superconducting qubits and extend coherence times moving forward. △ Less

Submitted 30 August, 2021; originally announced August 2021.

Comments: 7 pages, 4 figures

Towards merged-element transmons using silicon fins: the FinMET

Authors: Aranya Goswami, Anthony P. McFadden, Tongyu Zhao, Hadass S. Inbar, Jason T. Dong, Ruichen Zhao, Corey Rae McRae, Raymond W. Simmonds, Christopher J. Palmstrøm, David P. Pappas

Abstract: A merged-element transmon (MET) device, based on silicon (Si) fins, is proposed and the first steps to form such a "FinMET" are demonstrated. This new application of fin technology capitalizes on the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on the parallel side-wall surfaces. This process… ▽ More A merged-element transmon (MET) device, based on silicon (Si) fins, is proposed and the first steps to form such a "FinMET" are demonstrated. This new application of fin technology capitalizes on the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on the parallel side-wall surfaces. This process circumvents the challenges associated with the growth of low-loss insulating barriers on lattice matched superconductors. By implementing low-loss, intrinsic float-zone Si as the barrier material rather than commonly used, potentially lossy AlOx, the FinMET is expected to overcome problems with standard transmons by (1) reducing dielectric losses, (2) minimizing the formation of two-level system spectral features, (3) exhibiting greater control over barrier thickness and qubit frequency spread, especially when combined with commercial fin fabrication and atomic-layer digital etching; (4) potentially reducing the footprint by several orders of magnitude; and (5) allowing scalable fabrication. Here, as a first step to making such a device, the fabrication of Si fin capacitors on Si(110) substrates with shadow-deposited Al electrodes is demonstrated. These fin capacitors are then fabricated into lumped element resonator circuits and probed using low-temperature microwave measurements. Further thinning of silicon junctions towards the tunneling regime will enable the scalable fabrication of FinMET devices based on existing silicon technology, while simultaneously avoiding lossy amorphous dielectrics for the tunnel barriers. △ Less

Submitted 1 July, 2022; v1 submitted 25 August, 2021; originally announced August 2021.

Cryogenic microwave loss in epitaxial Al/GaAs/Al trilayers for superconducting circuits

Authors: C. R. H. McRae, A. McFadden, R. Zhao, H. Wang, J. L. Long, T. Zhao, S. Park, M. Bal, C. J. Palmstrøm, D. P. Pappas

Abstract: Epitaxially-grown superconductor/dielectric/superconductor trilayers have the potential to form high-performance superconducting quantum devices and may even allow scalable superconducting quantum computing with low-surface-area qubits such as the merged-element transmon. In this work, we measure the power-independent loss and two-level-state (TLS) loss of epitaxial, wafer-bonded, and substrate-re… ▽ More Epitaxially-grown superconductor/dielectric/superconductor trilayers have the potential to form high-performance superconducting quantum devices and may even allow scalable superconducting quantum computing with low-surface-area qubits such as the merged-element transmon. In this work, we measure the power-independent loss and two-level-state (TLS) loss of epitaxial, wafer-bonded, and substrate-removed Al/GaAs/Al trilayers by measuring lumped element superconducting microwave resonators at millikelvin temperatures and down to single photon powers. The power-independent loss of the device is $(4.8 \pm 0.1) \times 10^{-5}$ and resonator-induced intrinsic TLS loss is $(6.4 \pm 0.2) \times 10^{-5}$. Dielectric loss extraction is used to determine a lower bound of the intrinsic TLS loss of the trilayer of $7.2 \times 10^{-5}$. The unusually high power-independent loss is attributed to GaAs's intrinsic piezoelectricity. △ Less

Submitted 30 August, 2021; v1 submitted 21 September, 2020; originally announced September 2020.

Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique

Authors: Anthony McFadden, Aranya Goswami, Michael Seas, Corey Rae H. McRae, Ruichen Zhao, David P. Pappas, Christopher J. Palmstrøm

Abstract: Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconduct… ▽ More Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconductor regrowth, resulting in epitaxial Al/GaAs/Al tri-layers on sapphire or silicon substrates. Structures are characterized with reflection high energy electron diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and X-ray diffraction. Applications of these structures to the field of quantum information processing is discussed. △ Less

Submitted 20 July, 2020; originally announced July 2020.

Comparing Dawn, Hubble Space Telescope, and Ground-Based Interpretations of (4) Vesta

Authors: Vishnu Reddy, Jian-Yang Li, Lucille Le Corre, Jennifer E. C. Scully, Robert Gaskell, Christopher T. Russell, Ryan S. Park, Andreas Nathues, Carol Raymond, Michael J. Gaffey, Holger Sierks, Kris J. Becker, Lucy A. McFadden

Abstract: Observations of asteroid 4 Vesta by NASA's Dawn spacecraft are interesting because its surface has the largest range of albedo, color and composition of any other asteroid visited by spacecraft to date. These hemispherical and rotational variations in surface brightness and composition have been attributed to impact processes since Vesta's formation. Prior to Dawn's arrival at Vesta, its surface p… ▽ More Observations of asteroid 4 Vesta by NASA's Dawn spacecraft are interesting because its surface has the largest range of albedo, color and composition of any other asteroid visited by spacecraft to date. These hemispherical and rotational variations in surface brightness and composition have been attributed to impact processes since Vesta's formation. Prior to Dawn's arrival at Vesta, its surface properties were the focus of intense telescopic investigations for nearly a hundred years. Ground-based photometric and spectroscopic observations first revealed these variations followed later by those using Hubble Space Telescope. Here we compare interpretations of Vesta's rotation period, pole, albedo, topographic, color, and compositional properties from ground-based telescopes and HST with those from Dawn. Rotational spectral variations observed from ground-based studies are also consistent with those observed by Dawn. While the interpretation of some of these features was tenuous from past data, the interpretations were reasonable given the limitations set by spatial resolution and our knowledge of Vesta and HED meteorites at that time. Our analysis shows that ground-based and HST observations are critical for our understanding of small bodies and provide valuable support for ongoing and future spacecraft missions. △ Less

Submitted 24 July, 2013; originally announced July 2013.

Comments: Pages: 51, Figures: 9, Tables: 5